Vapor deposition device and working method thereof

Abstract

The invention discloses a vapor deposition device and a working method thereof, and the device comprises a reaction chamber which is internally provided with a tray for supporting a substrate; the gas supply mechanism is connected to the gas inlet of the reaction chamber, and the output end of the gas supply mechanism is located above the tray; the driving mechanism is positioned below the reaction chamber and is in magnetic attraction fit with the tray; and the driving mechanism drives the tray to move back and forth in the horizontal direction so as to deposit and coat the substrate. According to the mode, reactants cannot be deposited on other interfaces in the reaction chamber, single-point nucleation and crystal orientation consistency are achieved, and therefore the quality and performance of a generated film are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing equipment, and in particular to a vapor deposition device and a working method thereof. Background Art

[0002] Physical vapor deposition (PVD) and chemical vapor deposition (CVD) are usually used to prepare large-area single-crystal van der Waals two-dimensional materials. However, whether it is physical vapor deposition or chemical vapor deposition, when thin film deposition is performed, the reactants or gaseous raw materials will fill the entire reaction chamber, causing the deposition of materials and the growth of thin films to occur at all interfaces of the entire reaction chamber and all surfaces of the substrate, resulting in multi-point nucleation, that is, the formation of crystal nuclei at multiple locations at the same time. Multi-point nucleation will make the film growth uneven, resulting in the final film containing multiple grains, resulting in poor quality and performance of the grown film. Summary of the invention

[0003] The present invention provides a vapor deposition device for solving the technical problem that during thin film deposition, reactants or gaseous raw materials fill the entire reaction chamber, including the entire surface of a substrate, resulting in polycrystalline nucleation of the final thin film and thus poor quality and performance of the grown thin film.

[0004] The present invention is achieved through the following technical solutions:

[0005] The present invention proposes a vapor deposition device, comprising: a reaction chamber, wherein a tray for supporting a substrate is provided in the reaction chamber; a gas supply mechanism, wherein the gas supply mechanism is connected to the gas inlet of the reaction chamber, and the output end of the gas supply mechanism is located above the tray; a driving mechanism, wherein the driving mechanism is located below the reaction chamber and is magnetically coupled to the tray; the driving mechanism drives the tray to reciprocate in a horizontal direction to deposit a film on the substrate.

[0006] Furthermore, the driving mechanism includes: a slide rail seat, a bearing seat slidably connected to the slide rail seat, a driving component transmission-connected to the bearing seat, and a magnetic levitation generator connected to the bearing seat, and the magnetic levitation generator is magnetically matched with the tray.

[0007] Furthermore, the driving assembly includes: a driving motor and a screw connected to an output end of the driving motor, and the screw is transmission-connected to the bearing seat.

[0008] Furthermore, the driving assembly also includes a fixed seat, the fixed seat is connected to the slide rail seat, one end of the screw rod is connected to the output end of the driving motor, and the other end of the screw rod is connected to the fixed seat.

[0009] Furthermore, the gas supply mechanism includes: a first gas supply component, a second gas supply component, a third gas supply component and a nozzle, the output end of the first gas supply component is located in the reaction chamber, the second gas supply component and the third gas supply component are both connected to the nozzle, and the nozzle is located in the reaction chamber.

[0010] Furthermore, baffles are provided around the air outlet of the nozzle, and the baffles are used to adjust the opening degree of the air outlet of the nozzle.

[0011] Furthermore, the first gas supply assembly, the second gas supply assembly and the third gas supply assembly have the same structure and include: an air supply pump and an air supply pipe connected to the air supply pump, the air supply pipe of the first gas supply assembly is connected to the reaction chamber, and the air supply pipes of the second gas supply assembly and the third gas supply assembly are both connected to the nozzle.

[0012] Furthermore, the vapor deposition device also includes a gas extraction component, and the gas extraction component is connected to the gas outlet of the reaction chamber.

[0013] Furthermore, the exhaust assembly includes: an exhaust pipe connected to the gas outlet of the reaction chamber and an exhaust pump connected to the exhaust pipe.

[0014] The present invention also provides a working method performed by the above-mentioned vapor deposition device, the working method comprising the following steps:

[0015] Placing the substrate on the tray with the top of the substrate located below the output end of the gas supply mechanism;

[0016] The gas supply mechanism delivers carrier gas to the reaction chamber until the reaction chamber is filled with carrier gas;

[0017] The gas supply mechanism transports the reactants to the substrate for deposition and coating;

[0018] The driving mechanism drives the tray so that the deposition coating on the substrate is completed when the tail of the substrate is located at the output end of the gas supply mechanism.

[0019] Beneficial effects of the present invention:

[0020] Compared with the prior art, the vapor deposition device proposed in the present invention has a driving mechanism located outside the reaction chamber and cooperates with the tray magnetically, so that the reaction chamber has a higher purity, which is conducive to the growth of high-quality thin films. The output end of the gas supply mechanism is located above the substrate, and the horizontal reciprocating movement of the driving mechanism tray prevents the reactants from being deposited on other interfaces in the reaction chamber, thereby achieving single-point nucleation and consistent crystal orientation, thereby improving the quality and performance of the generated thin film.

[0021] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the following preferred embodiments are specifically cited and described in detail as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 This is a schematic diagram of the overall structure of a vapor deposition device proposed by the present invention;

[0023] Figure 2 A schematic diagram of the cross-sectional structure of a vapor deposition device proposed by the present invention;

[0024] Figure 3 A schematic diagram of the internal structure of a vapor deposition device proposed by the present invention;

[0025] Figure 4 A schematic flow chart of a working method performed by a vapor deposition device proposed in the present invention.

[0026] Description of reference numerals:

[0027] 1. Reaction chamber; 2. Tray; 3. Driving mechanism; 31. Magnetic levitation generator; 32. Support seat; 33. Slide rail seat; 34. Driving assembly; 341. Screw rod; 342. Driving motor; 35. Fixed seat; 4. Gas supply mechanism; 41. First gas supply assembly; 411. Gas supply pump; 412. Gas supply pipe; 42. Second gas supply assembly; 43. Third gas supply assembly; 44. Nozzle; 45. Baffle; 5. Exhaust assembly; 51. Exhaust pipe; 52. Exhaust pump; 6. Protective cover; 7. Substrate; 8. Control unit. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0029] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0030] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships described in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0031] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0032] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be connected, detachably connected, or integrated; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0033] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0034] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms should not be understood as necessarily referring to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification.

[0035] See also Figures 1 to 3 The present invention proposes a vapor deposition device, comprising: a reaction chamber 1, in which a tray 2 for supporting a substrate 7 is provided; a gas supply mechanism 4, which is connected to the gas inlet of the reaction chamber 1, and the output end of the gas supply mechanism 4 is located above the tray 2; a driving mechanism 3, which is located below the reaction chamber 1 and is magnetically coupled with the tray 2; the driving mechanism 3 drives the tray 2 to reciprocate in the horizontal direction to deposit a film on the substrate 7.

[0036] It should be particularly noted that the reaction chamber 1 , the gas supply mechanism 4 and the driving mechanism 3 are all controlled by the control unit 8 .

[0037] In this embodiment, the vapor deposition device also includes: a protective cover 6, which is arranged on the reaction chamber 1 and the driving mechanism 3. The protective cover 6 isolates the reaction chamber 1 and the driving mechanism 3 from the external environment to prevent external factors from affecting the normal operation of the reaction chamber 1 and the driving mechanism 3.

[0038] In actual use, first, the gas supply mechanism 4 transports a carrier gas (such as nitrogen or argon) into the reaction chamber 1 until the carrier gas fills the entire reaction chamber 1. At the same time, the control unit 8 adjusts the pressure and temperature of the reaction chamber 1 to ensure that the environmental conditions in the reaction chamber 1 meet the thin film preparation process; then, the gas supply mechanism 4 transports the reactant (such as a mixture of gallium chloride and ammonia) to the top of the substrate 7 for chemical reaction or physical deposition to form a thin film at the interface of the substrate 7; finally, the drive mechanism 3 drives the tray 2 to move back and forth in the horizontal direction, so that the substrate 7 can continuously change the contact position with the reactant, so that the reactant is evenly deposited on the substrate 7.

[0039] In the vapor deposition device proposed in this embodiment, the driving mechanism 3 is located outside the reaction chamber 1 and cooperates with the tray 2 by magnetic attraction, so that the reaction chamber 1 has a higher purity, which is conducive to the growth of high-quality thin films. The output end of the gas supply mechanism 4 is located above the substrate 7. The driving mechanism 3 and the tray 2 move horizontally back and forth, so that the reactants will not be deposited on other interfaces in the reaction chamber 1, realizing single-point nucleation. At the same time, the crystal orientation is consistent, thereby improving the quality and performance of the generated thin film.

[0040] See also Figures 2 to 3 The driving mechanism 3 includes: a slide rail seat 33, a bearing seat 32 slidably connected to the slide rail seat 33, a driving component 34 drivingly connected to the bearing seat 32, and a magnetic levitation generator 31 connected to the bearing seat 32, and the magnetic levitation generator 31 is magnetically matched with the tray 2.

[0041] Specifically, the magnetic field generated by the magnetic levitation generator 31 suspends the tray 2 in the reaction chamber 1 and is located below the output end of the gas supply mechanism 4, so that the tray 2 can move contactlessly in the reaction chamber 1. The support seat 32 is slidably connected to the slide rail seat 33, so that the driving component 34 can drive the support seat 32 to move back and forth on the slide rail seat 33, thereby driving the tray 2 to move. As the tray 2 moves, the interface of the substrate 7 contacts the reactant transported by the gas supply mechanism 4, and a chemical reaction or physical deposition occurs to form a thin film. Since the moving trajectory of the tray 2 is controlled by the driving component 34, and the gas ejected by the gas supply mechanism 4 forms a line on the substrate 7, the formation of multiple grains is avoided, single-point nucleation is achieved, and the quality and performance of the generated thin film are improved.

[0042] Please refer again Figures 2 to 3 The driving assembly 34 includes: a driving motor 342 and a screw rod 341 connected to the output end of the driving motor 342 , and the screw rod 341 is drivingly connected to the bearing seat 32 .

[0043] Specifically, the driving motor 342 rotates through the screw 341, and the spiral groove on the screw 341 cooperates with the nut on the support seat 32 to convert the rotational motion into linear motion, and the support seat 32 moves along the axis direction of the screw 341 to achieve its horizontal movement and positioning. The pitch of the screw 341 determines the distance the support seat 32 moves, and the speed of the motor determines the speed of movement, so as to achieve the control of the position of the support seat 32 (and then the tray 2), ensure the uniformity and consistency of the film during the deposition process, and thus improve the quality of the generated film.

[0044] Please refer again Figures 2 to 3 The driving assembly 34 also includes a fixed seat 35 , which is connected to the slide rail seat 33 , one end of the screw rod 341 is connected to the output end of the driving motor 342 , and the other end of the screw rod 341 is connected to the fixed seat 35 .

[0045] Specifically, the fixing seat 35 is connected to the slide rail seat 33, providing a stable support point for the screw rod 341, thereby enhancing the structural stability of the driving assembly 34, avoiding vibration and shaking during the movement of the bearing seat 32, and improving the consistency and uniformity of the film growth.

[0046] Please refer again Figures 2 to 3 The gas supply mechanism 4 includes: a first gas supply component 41, a second gas supply component 42, a third gas supply component 43 and a nozzle 44. The output end of the first gas supply component 41 is located in the reaction chamber 1, the second gas supply component 42 and the third gas supply component 43 are both connected to the nozzle 44, and the nozzle 44 is located in the reaction chamber 1.

[0047] Specifically, the first gas supply assembly 41, the second gas supply assembly 42 and the third gas supply assembly 43 respectively provide different gases, control the type and flow rate of the gas, so as to meet the requirements of different reaction processes for gas composition and ratio. In this embodiment, the first gas supply assembly 41 is used to supply a carrier gas (such as nitrogen or argon) into the reaction chamber 1, and the gases supplied by the second gas supply assembly 42 and the third gas supply assembly 43 are mixed in the nozzle 44 to produce a reactant gas (such as a mixture of gallium chloride and ammonia), so that the reactant gas is directly deposited on the interface of the substrate 7 after being generated, thereby improving the growth efficiency of the thin film.

[0048] See also Figure 2 A baffle 45 is provided around the air outlet of the nozzle 44 , and the baffle 45 is used to adjust the opening and closing degree of the air outlet of the nozzle 44 .

[0049] Specifically, the position of the baffle 45 is adjusted to change the opening and closing degree of the gas outlet of the nozzle 44, thereby controlling the flow rate, flow rate and injection angle of the gas, so that the nozzle 44 can adjust the width and height of the gas outlet according to different process requirements and adapt to different thin film deposition processes. At the same time, the reactants sprayed from the nozzle 44 on the substrate 7 are slowly changed from point supply to line supply, which cooperates with the driving mechanism 3 to drive the substrate 7 to move, thereby realizing the growth of single crystal thin films and improving the quality and performance of the generated thin films.

[0050] See also Figures 2 to 3 The first gas supply component 41, the second gas supply component 42 and the third gas supply component 43 have the same structure and include: an air supply pump 411 and an air supply pipe 412 connected to the air supply pump 411, the air supply pipe 412 of the first gas supply component 41 is connected to the reaction chamber 1, and the air supply pipes 412 of the second gas supply component 42 and the third gas supply component 43 are both connected to the nozzle 44.

[0051] Specifically, the gas supply pipe 412 of the first gas supply assembly 41 is connected to the reaction chamber 1, and is mainly used to provide carrier gas to maintain the reaction environment of the reaction chamber 1. The gas supply pipes 412 of the second gas supply assembly 42 and the third gas supply assembly 43 are both connected to the nozzle 44, and the gases supplied by the second gas supply assembly 42 and the third gas supply assembly 43 are mixed in the nozzle 44 to generate reactants for thin film deposition. The control unit 8 controls the gas supply, improves the efficiency of thin film deposition, and shortens the production cycle.

[0052] See also Figures 1 to 3 The vapor deposition device further includes a gas extraction component 5 , which is connected to the gas outlet of the reaction chamber 1 .

[0053] Specifically, the exhaust assembly is controlled by the control unit 8. During the vapor deposition process, the exhaust assembly 5 generates negative pressure to extract the waste gas or unreacted gas generated by the reaction in the reaction chamber 1 to prevent it from affecting the thin film deposition. At the same time, the pressure in the reaction chamber 1 is maintained stable to ensure the smooth progress of the thin film deposition, thereby improving the efficiency and quality of the thin film deposition.

[0054] See also Figures 2 to 3 The exhaust assembly 5 includes an exhaust pipe 51 connected to the gas outlet of the reaction chamber 1 and an exhaust pump 52 connected to the exhaust pipe 51 .

[0055] Specifically, the exhaust pipe 51 guides the gas in the reaction chamber 1 to the exhaust pump 52, and the exhaust pump 52 generates negative pressure to extract and discharge the gas in the reaction chamber 1, so that the pressure of the reaction chamber 1 remains stable, thereby improving the efficiency and quality of thin film deposition.

[0056] See also Figure 4 The present invention also proposes a working method performed by the above-mentioned vapor deposition device, the working method comprising the following steps:

[0057] Step S1, placing the substrate on the tray with the top of the substrate located below the output end of the gas supply mechanism;

[0058] Step S2, the gas supply mechanism delivers carrier gas to the reaction chamber until the reaction chamber is filled with carrier gas;

[0059] Step S3, the gas supply mechanism transports the reactants to the substrate for deposition and coating;

[0060] Step S4, the driving mechanism drives the tray so that the deposition coating on the substrate is completed when the tail of the substrate is located at the output end of the gas supply mechanism.

[0061] Compared with the prior art, in the vapor deposition device proposed in the present invention, the driving mechanism 3 is located outside the reaction chamber 1 and cooperates with the tray 2 by magnetic attraction, so that the reaction chamber 1 has a higher purity, which is conducive to the growth of high-quality thin films. The output end of the gas supply mechanism 4 is located above the substrate 7. The driving mechanism 3 and the tray 2 move horizontally back and forth, so that the reactants will not be deposited on other interfaces in the reaction chamber 1, achieving single-point nucleation and consistent crystal orientation, thereby improving the quality and performance of the generated thin film.

[0062] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A vapor deposition device, characterized in that: include: A reaction chamber, wherein a tray for supporting a substrate is provided in the reaction chamber; A gas supply mechanism, the gas supply mechanism is connected to the gas inlet of the reaction chamber, and the output end of the gas supply mechanism is located above the tray; A driving mechanism, the driving mechanism is located below the reaction chamber and is magnetically coupled to the tray; The driving mechanism drives the tray to reciprocate in a horizontal direction to deposit a coating on the substrate.

2. The vapor deposition device according to claim 1, characterized in that: The driving mechanism includes: a slide rail seat, a bearing seat slidably connected to the slide rail seat, a driving component drivingly connected to the bearing seat, and a magnetic levitation generator connected to the bearing seat, and the magnetic levitation generator is magnetically matched with the tray.

3. The vapor deposition device according to claim 2, characterized in that: The driving assembly includes: a driving motor and a screw connected to the output end of the driving motor, and the screw is drivingly connected to the bearing seat.

4. The vapor deposition device according to claim 3, characterized in that: The driving assembly also includes a fixing seat, which is connected to the slide rail seat. One end of the screw rod is connected to the output end of the driving motor, and the other end of the screw rod is connected to the fixing seat.

5. The vapor deposition device according to claim 1, characterized in that: The gas supply mechanism includes: a first gas supply component, a second gas supply component, a third gas supply component and a nozzle, the output end of the first gas supply component is located in the reaction chamber, the second gas supply component and the third gas supply component are both connected to the nozzle, and the nozzle is located in the reaction chamber.

6. The vapor deposition device according to claim 5, characterized in that: Baffles are provided around the air outlet of the nozzle, and the baffles are used to adjust the opening and closing degree of the air outlet of the nozzle.

7. The vapor deposition device according to claim 5, characterized in that: The first gas supply assembly, the second gas supply assembly and the third gas supply assembly have the same structure and include: an air supply pump and an air supply pipe connected to the air supply pump, the air supply pipe of the first gas supply assembly is connected to the reaction chamber, and the air supply pipes of the second gas supply assembly and the third gas supply assembly are both connected to the nozzle.

8. The vapor deposition device according to claim 1, characterized in that: The vapor deposition device further comprises a gas extraction component connected to a gas outlet of the reaction chamber.

9. The vapor deposition device according to claim 8, characterized in that: The gas extraction component comprises: a gas extraction pipe connected to the gas outlet of the reaction chamber and a gas extraction pump connected to the gas extraction pipe.

10. A working method performed by the vapor deposition device according to any one of claims 1 to 9, characterized in that: The working method comprises the following steps: Placing the substrate on the tray with the top of the substrate located below the output end of the gas supply mechanism; The gas supply mechanism delivers carrier gas to the reaction chamber until the reaction chamber is filled with carrier gas; The gas supply mechanism transports the reactants to the substrate for deposition and coating; The driving mechanism drives the tray so that the deposition coating on the substrate is completed when the tail of the substrate is located at the output end of the gas supply mechanism.

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