Switch, manufacturing method thereof, circuit, chip and electronic equipment

Abstract

The invention provides a switch, a manufacturing method thereof, a circuit, a chip and electronic equipment. The switch comprises a substrate; the capacitor comprises a first electrode, a second electrode and a dielectric layer, the first electrode and the second electrode are oppositely arranged, the second electrode is arranged on the substrate, the dielectric layer is located between the first electrode and the second electrode, and the dielectric layer comprises a first sub-dielectric layer and a second sub-dielectric layer arranged on the first sub-dielectric layer; one end of the first sub-dielectric layer is in contact with the second electrode, and an included angle is formed between the extension direction of the second sub-dielectric layer and the extension direction of the first sub-dielectric layer; the grounding layer is arranged on the substrate; the switch beam is arranged on the grounding layer; the switch beam is used for keeping a gap with the capacitor or being in contact with the capacitor under driving. The capacitance of the capacitor can be increased, so that the switch can be applied to a high-power circuit.

Description

Technical Field

[0001] The present application relates to the field of circuit technology, and in particular to a switch and a manufacturing method thereof, a circuit, a chip and an electronic device. Background Art

[0002] Electronic devices are usually equipped with circuits, and switches are usually provided in the circuits to enable the selection of different signals in the circuits. In order to adapt to high-frequency working modes and achieve better switching performance, the switches may be capacitive RFMEMS switches.

[0003] In the related art, a capacitive RF MEMS switch generally includes a substrate and a capacitor disposed on the substrate. The capacitor includes a first electrode, a second electrode, and a plurality of bulk dielectric layers disposed opposite to each other. There is a gap between the second electrode and the bulk dielectric layer, and the second electrode can be displaced and contact the bulk dielectric layer after receiving a driving signal, thereby realizing the opening and closing functions of the switch.

[0004] However, the capacitance of the capacitor in the related art is usually small and cannot be applied to high-power circuits. Summary of the invention

[0005] In order to solve the above technical problems, the present application provides a switch and a manufacturing method thereof, a circuit, a chip and an electronic device, which can increase the capacitance of the capacitor, so that the switch can be applied to high-power circuits.

[0006] The present application provides a switch, comprising: a substrate, a capacitor, a grounding layer and a switch beam. The capacitor comprises a first electrode, a second electrode and a dielectric layer, the first electrode and the second electrode are arranged opposite to each other, the second electrode is arranged on the substrate, the dielectric layer is located between the first electrode and the second electrode, the dielectric layer comprises a first sub-dielectric layer and a second sub-dielectric layer arranged on the first sub-dielectric layer, one end of the first sub-dielectric layer contacts the second electrode, and an angle is formed between the extension direction of the second sub-dielectric layer and the extension direction of the first sub-dielectric layer. The grounding layer is arranged on the substrate. The switch beam is arranged on the grounding layer; the switch beam is used to maintain a gap between the capacitor or to contact the capacitor under driving.

[0007] When the switch of the present application is applied to a circuit, the switch can be connected in series to a branch in the circuit, for example, the capacitor of the switch is connected in series to the first branch in the circuit. Moreover, the grounding layer of the switch is grounded. The circuit may also include a driving module, the driving module may be electrically connected to the switch beam, the driving module may send a driving signal to the switch beam, and the switch beam may generate displacement under the drive of the driving signal after receiving the driving signal. When the driving module does not send a driving signal to the switch beam, there is a gap between the switch beam and the capacitor, and the radio frequency signal entering the first branch can be output through the second electrode. In this case, the switch is in a closed state, the first branch is a passage, and the radio frequency signal can be transmitted from one end of the first branch to the other end. After the driving module sends a driving signal to the switch beam, the switch beam generates displacement after receiving the driving signal and contacts the capacitor. Since the switch beam is arranged in the grounding layer, the material of the switch beam may include a conductive material, and the grounding layer is grounded, therefore, the radio frequency signal entering the first branch will be introduced into the grounding layer, and cannot be output through the second electrode. In this case, the switch is in an open state, the first branch is an open circuit, and the radio frequency signal cannot be transmitted from one end of the first branch to the other end. In this way, the functions of closing and opening the switch can be realized.

[0008] Since the dielectric layer of the switch of the present application includes a first sub-dielectric layer and a second sub-dielectric layer disposed on the first sub-dielectric layer, the cross-sectional area of ​​the solid dielectric in the present application is greater than the cross-sectional area of ​​the solid dielectric in the related art. The dielectrics in the first sub-dielectric layer and the second sub-dielectric layer are usually solid dielectrics, and the dielectric constant of the solid dielectric is greater than that of air, thereby increasing the dielectric constant of the dielectric layer, thereby increasing the capacitance of the capacitor, so that the switch can be applied to high-power circuits.

[0009] In some possible implementations, there is a first gap between the second sub-dielectric layer and the first electrode, that is, the second sub-dielectric layer is not in contact with the first electrode. Moreover, the medium in the first gap is usually air. When the switch is in a closed state, the first branch can charge the capacitor, and one end of the first sub-dielectric layer of the dielectric layer contacts the second electrode. Therefore, the position on the first sub-dielectric layer that contacts the second electrode will accumulate charge to meet the electricity storage function of the dielectric layer. Since the first gap between the second sub-dielectric layer and the first electrode is filled with air, the side of the second sub-dielectric layer facing the first electrode will not accumulate charge, thereby avoiding the situation where the second sub-dielectric layer accumulates more charge and causes failure. Therefore, the present application can increase the capacitance of the capacitor while avoiding the situation where the capacitor fails due to the accumulation of more charge in the dielectric layer.

[0010] In some possible implementations, there is a second gap between the second sub-dielectric layer and the second electrode, that is, the second sub-dielectric layer is not in contact with the second electrode. Moreover, the medium in the second gap is usually air. When the switch is in a closed state, the first branch can charge the capacitor, and one end of the first sub-dielectric layer of the dielectric layer is in contact with the second electrode. Therefore, the position on the first sub-dielectric layer that contacts the second electrode will accumulate charge to meet the electricity storage function of the dielectric layer. Since the second gap between the second sub-dielectric layer and the second electrode is filled with air, the side of the second sub-dielectric layer facing the second electrode will not accumulate charge, thereby avoiding the situation where the second sub-dielectric layer accumulates more charge and causes failure. Therefore, the present application can increase the capacitance of the capacitor while avoiding the situation where the capacitor fails due to the accumulation of more charge in the dielectric layer.

[0011] In some possible implementations, one end of the first sub-dielectric layer away from the second electrode is in contact with the first electrode. In the present application, one end of the first sub-dielectric layer away from the second electrode can always remain in contact with the first electrode. Since one end of the first sub-dielectric layer is also in contact with the second electrode, the two ends of the first sub-dielectric layer are in contact with the first electrode and the second electrode respectively, that is, the height of the first sub-dielectric layer along its extension direction can be the same as the distance between the first electrode and the second electrode. It can be understood that the distance between the first electrode and the second electrode can refer to the distance between the side of the first electrode facing the second electrode and the side of the second electrode facing the first electrode. Since the two ends of the first sub-dielectric layer are in contact with the first electrode and the second electrode respectively, the distance between the first electrode and the second electrode remains unchanged, thereby making the capacitance of the capacitor remain unchanged, so that when the switch is applied to the circuit, the performance of the circuit can be made more stable. In addition, the switch will frequently close and open during operation, and the switch beam needs to frequently maintain a certain distance or contact with the first electrode, and the switch beam will frequently generate impact force, which acts on the first electrode. Since the two ends of the first sub-dielectric layer are in contact with the first electrode and the second electrode respectively, the first electrode, the first sub-dielectric layer and the second electrode can act as a whole to jointly bear the impact force generated by the switch beam, thereby reducing the situation where the first electrode is damaged when it is subjected to the impact force due to the gap between the first sub-dielectric layer and the first electrode. Therefore, the present application can improve the reliability of the switch and extend the service life of the switch.

[0012] In some possible implementations, a first through hole is provided at a position on the first electrode that contacts the first sub-dielectric layer. In this way, it is not easy to generate charges at the position on the first electrode that contacts the first sub-dielectric layer, and there will be no electric field in the projection area of ​​the first through hole on the first sub-dielectric layer, and no charges will be accumulated, thereby further reducing the area of ​​the region where charges are accumulated on the first sub-dielectric layer, thereby further reducing the situation where the capacitor fails due to the accumulation of too much charge.

[0013] In some possible implementations, the cross-sectional area of ​​the first through hole is smaller than the cross-sectional area of ​​the first sub-dielectric layer. Since the first electrode and the second electrode are arranged relative to each other, and the second electrode is arranged on the substrate, when the cross-sectional area of ​​the first through hole is smaller than the cross-sectional area of ​​the first sub-dielectric layer, a part of the first sub-dielectric layer at one end facing the first electrode contacts the first electrode, so that the first sub-dielectric layer can provide support for the first electrode, so that a certain distance is maintained between the first electrode and the second electrode.

[0014] In some possible implementations, the first electrode is further provided with a second through hole, and the second through hole is connected to the first gap. In this way, in the process of manufacturing the switch, after providing a substrate, the second electrode, the dielectric layer and the first electrode can be sequentially manufactured on the substrate, and then the second through hole is etched on the first electrode, and the first gap is etched between the first electrode and the second electrode through the second through hole. In this way, the dielectric layer of the switch can be manufactured by a manufacturing process of growth and etching, thereby making the manufacturing process of the dielectric layer relatively simple, and further making the manufacturing process of the switch relatively simple.

[0015] In some possible implementations, a third through hole is provided on the second sub-dielectric layer, and the third through hole corresponds to the position of the second through hole. In this way, in the process of manufacturing the switch, after etching the first gap, the third through hole can be further etched on the dielectric layer, and the second gap can be etched between the first electrode and the second electrode. In this way, the dielectric layer of the switch can be manufactured by a manufacturing process of growth and etching, thereby making the manufacturing process of the dielectric layer relatively simple, and further making the manufacturing process of the switch relatively simple.

[0016] In some possible implementations, the first part of the switch beam is disposed on the ground layer, and the second part of the switch beam is suspended and opposite to the first electrode and has a gap, so that the second part is displaced under driving and contacts the first electrode. In this way, after the driving module does not send a driving signal to the switch beam, there is a gap between the switch beam and the first electrode, and the radio frequency signal entering the first branch can be output through the second electrode. In this case, the switch is in a closed state, the first branch is a passage, and the radio frequency signal can be transmitted from one end of the first branch to the other end. After the driving module sends a driving signal to the switch beam, the switch beam is displaced after receiving the driving signal and contacts the first electrode. Since the switch beam is disposed on the ground layer, the material of the switch beam may include a conductive material, and the ground layer is grounded, so the radio frequency signal entering the first branch will be introduced into the ground layer and cannot be output through the second electrode. In this case, the switch is in an open state, the first branch is an open circuit, and the radio frequency signal cannot be output from one end of the first branch to the other end. In this way, the functions of closing and opening the switch can be realized.

[0017] The present application also provides a circuit, comprising a driving module and a switch of any of the above embodiments, wherein a switch beam of the switch is electrically connected to the driving module. The circuit can achieve all effects of the switch.

[0018] The present application also provides a chip, including the above-mentioned circuit. The chip can achieve all the effects of the chip.

[0019] The present application also provides an electronic device, comprising a circuit board and the circuit of the above embodiment, wherein the circuit is electrically connected to the circuit board. The electronic device can achieve all the effects of the circuit.

[0020] The present application also provides a method for manufacturing a switch, the manufacturing method comprising: providing a substrate. Sequentially manufacturing a second electrode, a sacrificial layer, and a first electrode on the substrate. Etching a first gap and a second gap on the sacrificial layer to obtain a dielectric layer, wherein the dielectric layer, the first electrode, and the second electrode form a capacitor, the dielectric layer comprising a first sub-dielectric layer and a second sub-dielectric layer, the first gap being a gap between the second sub-dielectric layer and the first electrode, the second gap being a gap between the second sub-dielectric layer and the second electrode, and an angle being formed between an extension direction of the second sub-dielectric layer and an extension direction of the first sub-dielectric layer. Manufacturing a grounding layer on the substrate. Manufacturing a switch beam on the grounding layer, the switch beam being used to maintain a gap with the capacitor, or to contact the capacitor under driving.

[0021] When the switch of the present application is applied to a circuit, the switch can be connected in series to a branch in the circuit, for example, the capacitor of the switch is connected in series to the first branch in the circuit. Moreover, the grounding layer of the switch is grounded. The circuit may also include a driving module, the driving module may be electrically connected to the switch beam, the driving module may send a driving signal to the switch beam, and the switch beam may generate displacement under the drive of the driving signal after receiving the driving signal. When the driving module does not send a driving signal to the switch beam, there is a gap between the switch beam and the capacitor, and the radio frequency signal entering the first branch can be output through the second electrode. In this case, the switch is in a closed state, the first branch is a passage, and the radio frequency signal can be transmitted from one end of the first branch to the other end. After the driving module sends a driving signal to the switch beam, the switch beam generates displacement after receiving the driving signal and contacts the capacitor. Since the switch beam is arranged in the grounding layer, the material of the switch beam may include a conductive material, and the grounding layer is grounded, therefore, the radio frequency signal entering the first branch will be introduced into the grounding layer, and cannot be output through the second electrode. In this case, the switch is in an open state, the first branch is an open circuit, and the radio frequency signal cannot be transmitted from one end of the first branch to the other end. In this way, the functions of closing and opening the switch can be realized.

[0022] Since the dielectric layer of the switch of the present application includes a first sub-dielectric layer and a second sub-dielectric layer arranged on the first sub-dielectric layer, and the second sub-dielectric layer is usually a solid medium, its dielectric constant is greater than that of air, thereby increasing the dielectric constant of the dielectric layer, thereby increasing the capacitance of the capacitor, so that the switch can be applied to high-power circuits.

[0023] In addition, in the process of manufacturing the switch, after providing a substrate, the second electrode, the dielectric layer and the first electrode can be sequentially manufactured on the substrate, and then the second through hole is etched on the first electrode, and the first gap is etched between the first electrode and the second electrode through the second through hole, and the third through hole is etched on the dielectric layer, and the second gap is etched between the first electrode and the second electrode. In this way, the dielectric layer of the switch can be manufactured by the growth and etching manufacturing process, thereby making the manufacturing process of the dielectric layer relatively simple, and further making the manufacturing process of the switch relatively simple. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments of the present application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0025] Figure 1a It is the structural principle diagram of the switch applied in the circuit;

[0026] Figure 1b for Figure 1a , the structural schematic diagram when switch S1 and switch S4 are closed;

[0027] Figure 1c for Figure 1a , the structural schematic diagram when switch S1 and switch S2 are closed;

[0028] Figure 2 This is a schematic diagram of the structure of a switch in an embodiment of the present application;

[0029] Figure 3 for Figure 2 A schematic diagram of the structure in which the switch beam in the embodiment of the present invention is displaced after receiving a driving signal;

[0030] Figure 4a for Figure 2 , a schematic diagram of the structure of a capacitor;

[0031] Figure 4b A schematic diagram of the structure of a capacitor in another embodiment of the present application;

[0032] Figure 4c This is a schematic diagram of the structure of a capacitor in the third embodiment of the present application;

[0033] Figure 5 for Figure 4a Schematic diagram of the electric field on the dielectric layer in the capacitor shown;

[0034] Figure 6a This is a schematic diagram of the structure of a switch in another embodiment of the present application;

[0035] Figure 6b for Figure 6a A schematic diagram of the structure in which the switch beam in the embodiment of the present invention is displaced after receiving a driving signal;

[0036] Figure 7 for Figure 2 Flowchart of the method for making the switch shown.

[0037] Icon: 1-switch; 10-substrate; 20-capacitor; 21-first electrode; 22-second electrode; 23-dielectric layer; 231-first sub-dielectric layer; 232-second sub-dielectric layer; 24-third gap; 25-support portion; 26-first through hole; 27-first gap; 28-second through hole; 29-second gap; 201-third through hole; 30-ground layer; 40-switch beam. DETAILED DESCRIPTION

[0038] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0039] The term "and / or" herein is merely a description of the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B may represent: A exists alone, A and B exist at the same time, and B exists alone, wherein A and B may be singular or plural. The character " / " generally indicates that the associated objects before and after are in an "or" relationship. "At least one (item)" refers to one or more, and "plurality" refers to two or more. "At least one of the following (items)" or similar expressions refers to any combination of these items, including any combination of single (items) or plural (items). For example, at least one (item) of a, b or c may represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", wherein a, b, c may be single or multiple.

[0040] The terms "first" and "second" in the description and claims of the embodiments of the present application are used to distinguish different objects rather than to describe a specific order of objects. For example, a first target object and a second target object are used to distinguish different target objects rather than to describe a specific order of target objects.

[0041] "Connected", "connected" and similar words are used to express the intercommunication or interaction between different components, which may include direct connection or indirect connection through other components. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, inclusion of a series of steps or units. Methods, systems, products or devices are not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices. "Up", "down", "left", "right" and the like are only used relative to the orientation of the components in the drawings. These directional terms are relative concepts. They are used for description and clarification relative to the description, which may change accordingly according to the change of the orientation of the components in the drawings.

[0042] In the embodiments of the present application, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0043] In the description of the embodiments of the present application, unless otherwise specified, the meaning of "multiple" refers to two or more than two. For example, multiple processing units refer to two or more processing units; multiple systems refer to two or more systems.

[0044] Currently, electronic devices such as vehicle-mounted devices, mobile phones, and IoT devices are usually provided with chips and circuit boards. The chip can be electrically connected to the circuit board. The chip contains a circuit. The circuit can be an integrated circuit or a non-integrated circuit.

[0045] In order to realize the gating of different signals in the circuit, the circuit usually includes a switch. Figure 1a As shown, the circuit may include a first input terminal IN1, a second input terminal IN2, a first output terminal OUT1, a second output terminal OUT2, and four switches, which are S1, S2, S3, and S4. The switch S1 is arranged between the first input terminal IN1 and the first output terminal OUT1, the switch S2 is arranged between the first input terminal IN1 and the second output terminal OUT2, the switch S3 is arranged between the second input terminal IN2 and the first output terminal OUT1, and the switch S4 is arranged between the second input terminal IN2 and the second output terminal OUT2. A first signal may be input to the first input terminal IN1, and a second signal may be input to the second input terminal IN2. By closing or opening the switches S1, S2, S3, and S4, different signals may be output at the first output terminal OUT1 and the second output terminal OUT2.

[0046] For example, Figure 1a As shown, when the switches S1, S2, S3 and S4 are all in the off state, the first input terminal IN1 and the second input terminal IN2 do not output signals to the first output terminal OUT1 or the second output terminal OUT2, and the first output terminal OUT1 and the second output terminal OUT2 have no signal output.

[0047] like Figure 1b As shown, when the switches S1 and S4 are in a closed state and the switches S2 and S3 are in an open state, the first input terminal IN1 can output a first signal to the first output terminal OUT1, and the second input terminal IN2 can output a second signal to the second output terminal OUT2.

[0048] like Figure 1cAs shown, when the switches S1 and S2 are in a closed state and the switches S3 and S4 are in an open state, the first input terminal IN1 can output a first signal to the first output terminal OUT1, and the first input terminal IN1 can also output a first signal to the second output terminal OUT2.

[0049] Switches can generally be divided into radio frequency micro-electro-mechanical system (RF MEMS) switches and positive-intrinsic-negative (PIN) diode switches. Compared with PIN diode switches, RF MEMS switches have the advantages of low insertion loss, high pass power, high isolation and high linearity. Therefore, RF MEMS switches are widely used in wireless communications, terminal products and data communication products.

[0050] According to the working principle and result mode, RF MEMS switches can be divided into contact RF MEMS switches and capacitive RF MEMS switches. Among them, contact RF MEMS switches are suitable for circuits with low operating frequencies, while capacitive RF MEMS switches are used in circuits with high operating frequencies. With the increase of operating frequency, the demand for capacitive RF MEMS switches is becoming more and more intense.

[0051] A capacitive RF MEMS switch generally includes a substrate and a capacitor disposed on the substrate. The capacitor includes a first electrode and a second electrode disposed opposite to each other and a dielectric layer located between the first electrode and the second electrode.

[0052] During the operation of the capacitive RF MEMS switch, when the capacitive RF MEMS switch is in the closed state, the capacitor needs to go through the process of charging and discharging. During charging, the dielectric layer will accumulate charges; during discharging, the dielectric layer will release charges. During each discharge, some charges cannot be released. Therefore, during the long-term operation of the capacitive RF MEMS switch, there will be a large amount of charges accumulated in the dielectric layer that cannot be released, resulting in performance failure.

[0053] When capacitive RF MEMS switches are used in high-power circuits, more charges need to be accumulated during each charging process. During discharge, more charges cannot be released. Therefore, the performance failure caused by the accumulation of more charges in the dielectric layer is more severe, thereby seriously reducing the service life of the capacitive RF MEMS switch.

[0054] In order to improve the situation where the performance fails due to the accumulation of more charges in the dielectric layer, in the related art, the dielectric layer in the capacitive RF MEMS switch is arranged on the first electrode. The second electrode can receive a driving signal. The dielectric layer includes a plurality of block dielectric layers, and the dielectric in the block dielectric layer is a solid dielectric. A gap is provided between the block dielectric layer and the second electrode, and the dielectric in the gap is air. Moreover, there is also a gap between each two adjacent block dielectric layers, and the dielectric in the gap is also air. Therefore, in the related art, the cross-sectional area of ​​the air in the dielectric layer is larger, while the cross-sectional area of ​​the solid dielectric is smaller. In the related art, there is a gap between the second electrode and the block dielectric layer, and the switch is in an open state. When the second electrode receives the driving signal, the second electrode is displaced and contacts the block dielectric layer, thereby realizing the closing and opening functions of the switch. Moreover, the amount of charge accumulated in the dielectric layer can be reduced by the air layer, thereby reducing the situation where the capacitor fails due to the accumulation of more charges in the dielectric layer. However, the capacitance of the related art is usually small and cannot be applied to high-power circuits.

[0055] Based on this, an embodiment of the present application provides a switch that can be applied to a high-power circuit. The switch can be a capacitive RF MEMS switch. The circuit can also include a driving module and a controller, the driving module can be electrically connected to the switch, and the driving module can also be electrically connected to the controller. The controller can send a control signal to the driving module, and the driving module can send a driving signal to the switch after receiving the control signal.

[0056] like Figure 2 As shown, the switch 1 of the embodiment of the present application includes a substrate 10, a capacitor 20, a grounding layer 30 and a switch beam 40. The capacitor 20 includes a first electrode 21, a second electrode 22 and a dielectric layer 23, wherein the first electrode 21 and the second electrode 22 are arranged opposite to each other, the second electrode 22 is arranged on the substrate 10, and the dielectric layer 23 is located between the first electrode 21 and the second electrode 22. The dielectric layer 23 includes a first sub-dielectric layer 231 and a second sub-dielectric layer 232 arranged on the first sub-dielectric layer 231, one end of the first sub-dielectric layer 231 is in contact with the second electrode 22, and an angle is formed between the extension direction of the second sub-dielectric layer 232 and the extension direction of the first sub-dielectric layer 231. The grounding layer 30 is arranged on the substrate 10. The switch beam 40 is arranged on the grounding layer 30; the switch beam 40 is used to maintain a gap with the capacitor 20, or to contact the capacitor 20 under driving.

[0057] When the switch 1 of the embodiment of the present application is applied to a circuit, the switch 1 can be connected in series to a branch in the circuit. For example, the capacitor 20 of the switch 1 can be connected in series to the first branch in the circuit. Moreover, the grounding layer 30 of the switch 1 is grounded. The driving module in the circuit can be electrically connected to the switch beam 40, and the driving module can send a driving signal to the switch beam 40. After receiving the driving signal, the switch beam 40 can generate a displacement driven by the driving signal. When the driving module does not send a driving signal to the switch beam 40, there is a gap between the switch beam 40 and the capacitor 20, and the radio frequency signal entering the first branch can be output through the second electrode 22. In this case, the switch 1 is in a closed state, the first branch is a passage, and the radio frequency signal can be transmitted from one end of the first branch to the other end. After the driving module sends a driving signal to the switch beam 40, as Figure 3 As shown, the switch beam 40 is displaced after receiving the driving signal and contacts the capacitor 20. Since the switch beam 40 is disposed on the grounding layer 30, the material of the switch beam 40 may include a conductive material, and the grounding layer 30 is grounded, therefore, the radio frequency signal entering the first branch will be introduced into the grounding layer 30, and cannot be output through the second electrode 22. In this case, the switch 1 is in an open state, the first branch is open, and the radio frequency signal cannot be transmitted from one end of the first branch to the other end. Thus, the functions of closing and opening the switch 1 can be realized.

[0058] Since the dielectric layer 23 of the switch 1 in the embodiment of the present application includes a first sub-dielectric layer 231 and a second sub-dielectric layer 232 disposed on the first sub-dielectric layer 231, the cross-sectional area of ​​the solid dielectric in the embodiment of the present application is greater than the cross-sectional area of ​​the solid dielectric in the related art. The dielectric in the first sub-dielectric layer 231 and the second sub-dielectric layer 232 is usually a solid dielectric, and the dielectric constant of the solid dielectric is greater than that of air, thereby increasing the dielectric constant of the dielectric layer 23, and further increasing the capacitance of the capacitor 20, so that the switch 1 can be applied to high-power circuits.

[0059] Next, the components of the switch 1 according to the embodiment of the present application are described in detail.

[0060] The substrate 10 may be a silicon substrate 10 or a glass substrate, wherein the material of the silicon substrate 10 may include high-speed silicon or low-speed silicon.

[0061] The grounding layer 30 may be disposed on the substrate 10. The grounding layer 30 may be a metal layer. Figure 2As shown, the number of grounding layers 30 may be two, and there is a gap between the two grounding layers 30. With respect to the connection mode of the two grounding layers 30, in a possible implementation manner, a connection structure may be provided on the substrate 10, and the two grounding layers 30 may be electrically connected through the connection structure. In another possible implementation manner, it is not necessary to provide a connection structure on the substrate 10, and after the switch 1 is connected to the circuit, the two grounding layers 30 may be electrically connected through a wire or the like.

[0062] like Figure 2 As shown, the first electrode 21 and the second electrode 22 in the capacitor 20 can both be metal layers. The second electrode 22 is disposed on the substrate 10, and the first electrode 21 and the second electrode 22 are disposed opposite to each other, that is, the first electrode 21 is disposed on the side of the second electrode 22 away from the substrate 10.

[0063] The dielectric layer 23 is located between the first electrode 21 and the second electrode 22. The dielectric layer 23 includes a first sub-dielectric layer 231 and a second sub-dielectric layer 232 disposed on the first sub-dielectric layer 231. The extension direction of the second sub-dielectric layer 232 and the extension direction of the first sub-dielectric layer 231 form an angle, which may be 90°, for example. That is, the extension direction of the second sub-dielectric layer 232 is orthogonal to the extension direction of the first sub-dielectric layer 231.

[0064] like Figure 4a As shown, the number of the first sub-dielectric layers 231 may be at least two. The at least two first sub-dielectric layers 231 are both located between the first electrode 21 and the second electrode 22. And the at least two first sub-dielectric layers 231 are parallel to each other.

[0065] like Figure 4a As shown, one end of the first dielectric layer 231 contacts the second electrode 22, that is, the first dielectric layer 231 is disposed on the second electrode 22. With respect to the connection relationship between the first dielectric layer 231 and the first electrode 21, in a possible implementation manner, as shown in FIG. Figure 4aAs shown, one end of the first sub-dielectric layer 231 away from the second electrode 22 is in contact with the first electrode 21. In the embodiment of the present application, one end of the first sub-dielectric layer 231 away from the second electrode 22 can always remain in contact with the first electrode 21. Since one end of the first sub-dielectric layer 231 is also in contact with the second electrode 22, the two ends of the first sub-dielectric layer 231 are in contact with the first electrode 21 and the second electrode 22 respectively, that is, the height of the first sub-dielectric layer 231 along its extension direction can be the same as the distance between the first electrode 21 and the second electrode 22. It can be understood that the distance between the first electrode 21 and the second electrode 22 can refer to the distance between the side of the first electrode 21 facing the second electrode 22 and the side of the second electrode 22 facing the first electrode 21. Since the two ends of the first sub-dielectric layer 231 are in contact with the first electrode 21 and the second electrode 22 respectively, the distance between the first electrode 21 and the second electrode 22 is always kept constant, thereby making the capacitance of the capacitor 20 always remain constant, so that when the switch 1 is applied to the circuit, the performance of the circuit can be made more stable.

[0066] In addition, switch 1 is frequently closed and opened during operation. Figure 2 The switch beam 40 shown needs to frequently maintain a certain distance or contact with the first electrode 21, and the switch beam 40 will frequently generate impact force, which acts on the first electrode 21. Since the two ends of the first sub-dielectric layer 231 are in contact with the first electrode 21 and the second electrode 22 respectively, the first electrode 21, the first sub-dielectric layer 231 and the second electrode 22 can be used as a whole to jointly bear the impact force generated by the switch beam 40, thereby reducing the situation where the first electrode 21 is damaged when the impact force is applied due to the gap between the first sub-dielectric layer 231 and the first electrode 21. Therefore, the embodiment of the present application can improve the reliability of the switch 1 and extend the service life of the switch 1.

[0067] In another possible implementation, Figure 4b As shown, a third gap 24 is formed between one end of the first sub-dielectric layer 231 away from the second electrode 22 and the first electrode 21. In this case, the switch 1 may further include a support portion 25, the support portion 25 is located between the first electrode 21 and the second electrode 22, one end of the support portion 25 is in contact with the first electrode 21, and the other end of the support portion 25 is in contact with the second electrode 22, and the support portion 25 can provide support for the first electrode 21.

[0068] like Figure 4aAs shown, a first through hole 26 is provided at a position on the first electrode 21 that contacts the first sub-dielectric layer 231. In this way, it is not easy to generate charges at the position on the first electrode 21 that contacts the first sub-dielectric layer 231, and there will be no electric field in the projection area of ​​the first through hole 26 on the first sub-dielectric layer 231, and no charges will be accumulated, thereby further reducing the area of ​​the region where charges are accumulated on the first sub-dielectric layer 231, thereby further reducing the situation where the capacitor 20 fails due to the accumulation of too much charge.

[0069] Regarding the size relationship between the cross-sectional area of ​​the first sub-dielectric layer 231 and the cross-sectional area of ​​the first through hole 26, in a possible implementation manner, as shown in FIG. Figure 4a As shown, when the end of the first sub-dielectric layer 231 away from the second electrode 22 contacts the first electrode 21, the cross-sectional area of ​​the first through hole 26 is smaller than the cross-sectional area of ​​the first sub-dielectric layer 231. Wherein, the cross-sectional area of ​​the first through hole 26 is along the extension direction of the first through hole 26. Since the first electrode 21 and the second electrode 22 are arranged opposite to each other, and the second electrode 22 is arranged on the substrate 10, when the cross-sectional area of ​​the first through hole 26 is smaller than the cross-sectional area of ​​the first sub-dielectric layer 231, a part of the end of the first sub-dielectric layer 231 facing the first electrode 21 contacts the first electrode 21, so that the first sub-dielectric layer 231 can provide support for the first electrode 21, so that a certain distance is maintained between the first electrode 21 and the second electrode 22.

[0070] In another possible implementation, Figure 4b As shown, when there is a gap between the end of the first sub-dielectric layer 231 away from the second electrode 22 and the first electrode 21, the cross-sectional area of ​​the first through hole 26 may be greater than the cross-sectional area of ​​the first sub-dielectric layer 231. In other embodiments, the cross-sectional area of ​​the first through hole 26 may also be the same as the cross-sectional area of ​​the first sub-dielectric layer 231.

[0071] like Figure 4aAs shown, there is a first gap 27 between the second sub-dielectric layer 232 and the first electrode 21, that is, the second sub-dielectric layer 232 is not in contact with the first electrode 21. When the number of the first sub-dielectric layers 231 is at least two, the first gap 27 includes a cavity between every two adjacent first sub-dielectric layers 231 and between the second sub-dielectric layer 232 and the first electrode 21, and a cavity surrounded by the outermost first sub-dielectric layer 231, the second sub-dielectric layer 232 and the first electrode 21. The medium in the first gap 27 is usually air. When the switch 1 is in a closed state, the first branch can charge the capacitor 20, and one end of the first sub-dielectric layer 231 of the dielectric layer 23 is in contact with the second electrode 22. Therefore, the position on the first sub-dielectric layer 231 that contacts the second electrode 22 will accumulate charge to meet the power storage function of the dielectric layer 23. Since the first gap 27 between the second sub-dielectric layer 232 and the first electrode 21 is filled with air, the side of the second sub-dielectric layer 232 facing the first electrode 21 will not accumulate charges, thereby preventing the second sub-dielectric layer 232 from accumulating too much charge and causing failure. Therefore, the embodiment of the present application can increase the capacitance of the capacitor 20 while preventing the capacitor 20 from accumulating too much charge in the dielectric layer 23 and causing failure.

[0072] like Figure 4a As shown, the first electrode 21 is further provided with a second through hole 28, and the second through hole 28 is connected to the first gap 27. In this way, in the process of manufacturing the switch 1, after providing the substrate 10, the second electrode 22, the dielectric layer 23 and the first electrode 21 can be sequentially manufactured on the substrate 10, and then the second through hole 28 is etched on the first electrode 21, and the first gap 27 is etched between the first electrode 21 and the second electrode 22 through the second through hole 28. In this way, the dielectric layer 23 of the switch 1 can be manufactured by the manufacturing process of growth and etching, thereby making the manufacturing process of the dielectric layer 23 relatively simple, and further making the manufacturing process of the switch 1 relatively simple.

[0073] like Figure 4aAs shown, there is a second gap 29 between the second sub-dielectric layer 232 and the second electrode 22, that is, the second sub-dielectric layer 232 does not contact the second electrode 22. When the number of the first sub-dielectric layers 231 is at least two, the second gap 29 includes a cavity between every two adjacent first sub-dielectric layers 231 and between the second sub-dielectric layer 232 and the second electrode 22, and a cavity surrounded by the first sub-dielectric layer 231, the second sub-dielectric layer 232 and the second electrode 22 located at the outermost side. Moreover, the medium in the second gap 29 is usually air. When the switch 1 is in a closed state, the first branch can charge the capacitor 20, and one end of the first sub-dielectric layer 231 of the dielectric layer 23 contacts the second electrode 22. Therefore, the position on the first sub-dielectric layer 231 that contacts the second electrode 22 will accumulate charge to meet the power storage function of the dielectric layer 23. Since the second gap 29 between the second sub-dielectric layer 232 and the second electrode 22 is filled with air, the side of the second sub-dielectric layer 232 facing the second electrode 22 will not accumulate charges, thereby preventing the second sub-dielectric layer 232 from accumulating too much charge and causing failure. Therefore, the embodiment of the present application can increase the capacitance of the capacitor 20 while preventing the capacitor 20 from accumulating too much charge in the dielectric layer 23 and causing failure.

[0074] like Figure 4a As shown, in this embodiment, the second sub-dielectric layer 232 is provided with a third through hole 201, and the third through hole 201 corresponds to the second through hole 28. Two adjacent first sub-dielectric layers 231, the first gap 27, the third through hole 201, and the second gap 29 can form a cavity, and the medium in the cavity is air. In this way, in the process of manufacturing the switch 1, after etching the first gap 27, the third through hole 201 can be further etched on the dielectric layer 23, and the second gap 29 can be etched between the first electrode 21 and the second electrode 22. In this way, the dielectric layer 23 of the switch 1 can be manufactured by the growth and etching manufacturing process, thereby making the manufacturing process of the dielectric layer 23 relatively simple, and further making the manufacturing process of the switch 1 relatively simple.

[0075] It is understandable that in other embodiments, such as Figure 4c As shown, the third through hole 201 may not be provided on the second sub-dielectric layer 232. In this case, when manufacturing the switch 20, the first sub-dielectric layer 231 may be manufactured first, and then the second sub-dielectric layer 232 may be manufactured.

[0076] Switch 1 has a cutoff frequency f cutoff , when the operating frequency of switch 1 is less than the cut-off frequency f cutoff When Figure 5As shown, the first sub-dielectric layer 231 will not generate an electric field, thereby avoiding the situation where the capacitor 20 fails due to the accumulation of a large amount of charge in the dielectric layer 23. In addition, when designing the switch 1, the cut-off frequency f of the switch 1 can be determined first. cutoff Then, the cross-sectional area of ​​the first through hole 26 on the first electrode 21 is determined according to the cut-off frequency. And the distance between the first electrode 21 and the second electrode 22 and the sizes of the first sub-dielectric layer 231 and the second sub-dielectric layer 232 are determined according to the capacitance of the capacitor 20.

[0077] Regarding the connection relationship between the switch beam 40 and the ground layer 30, in a possible implementation manner, as shown in FIG. Figure 4a As shown, the first part of the switch beam 40 is arranged on the grounding layer 30, and the second part of the switch beam 40 is suspended and opposite to the first electrode 21 and has a gap, so that the second part is displaced under driving and contacts the first electrode 21. In this way, after the driving module does not send a driving signal to the switch beam 40, there is a gap between the switch beam 40 and the first electrode 21, and the radio frequency signal entering the first branch can be output through the second electrode 22. In this case, the switch 1 is in a closed state, the first branch is a passage, and the radio frequency signal can be transmitted from one end of the first branch to the other end. After the driving module sends a driving signal to the switch beam 40, the switch beam 40 is displaced after receiving the driving signal and contacts the first electrode 21. Since the switch beam 40 is arranged on the grounding layer 30, the material of the switch beam 40 may include a conductive material, and the grounding layer 30 is grounded, therefore, the radio frequency signal entering the first branch will be introduced into the grounding layer 30, and cannot be output through the second electrode 22. In this case, the switch 1 is in an open state, the first branch is an open circuit, and the radio frequency signal cannot be output from one end of the first branch to the other end. In this way, the functions of closing and opening the switch 1 can be realized.

[0078] In another possible implementation, Figure 6a As shown in FIG. 1 , the first part of the switch beam 40 is disposed on one of the two grounding layers 30, the second part of the switch beam 40 is disposed on the other of the two grounding layers 30, and the middle part of the switch beam 40 is opposite to the first electrode 21 and has a gap. In this way, after the driving module does not send a driving signal to the switch beam 40, there is a gap between the switch beam 40 and the first electrode 21, and the RF signal entering the first branch can be output through the second electrode 22. After the driving module sends a driving signal to the switch beam 40, after the switch beam 40 receives the driving signal, as shown in FIG. Figure 6b As shown, the middle portion of the switch beam 40 is displaced and contacts the first electrode 21 .

[0079] The present application also provides a method for manufacturing a switch 1. The method can be used to manufacture a switch 1. Figure 2 Switch 1 as shown. Figure 7As shown, the manufacturing method of the switch 1 may include:

[0080] S51, providing a substrate 10.

[0081] In this embodiment, the substrate 10 may be a silicon substrate or a glass substrate, wherein the material of the silicon substrate may include high-speed silicon or low-speed silicon.

[0082] S52 , sequentially manufacturing the second electrode 22 , the sacrificial layer and the first electrode 21 on the substrate 10 .

[0083] Specifically, the second electrode 22 is firstly manufactured on the substrate 10 , then a sacrificial layer is manufactured on the second electrode 22 , and finally the first electrode 21 is manufactured on the sacrificial layer.

[0084] S53 , etching a first gap 27 and a second gap 29 on the sacrificial layer to obtain a dielectric layer 23 .

[0085] In this embodiment, the dielectric layer 23, the first electrode 21, and the second electrode 22 form a capacitor 20. The dielectric layer 23 includes a first sub-dielectric layer 231 and a second sub-dielectric layer 232. The first gap 27 is a gap between the second sub-dielectric layer 232 and the first electrode 21, and the second gap 29 is a gap between the second sub-dielectric layer 232 and the second electrode 22. The extension direction of the second sub-dielectric layer 232 and the extension direction of the first sub-dielectric layer 231 have an angle.

[0086] S54 , forming a ground layer 30 on the substrate 10 .

[0087] The grounding layer 30 may be a metal layer. The number of the grounding layers 30 may be two, and there is a gap between the two grounding layers 30. With respect to the connection mode of the two grounding layers 30, in a possible implementation, a connection structure may be provided on the substrate 10, and the two grounding layers 30 may be electrically connected through the connection structure. In another possible implementation, it is not necessary to provide a connection structure on the substrate 10, and after the switch 1 is connected to the circuit, the two grounding layers 30 may be electrically connected through a wire or the like.

[0088] S55 , manufacturing the switch beam 40 on the ground layer 30 .

[0089] In this embodiment, the first portion of the switch beam 40 is disposed on the ground layer 30 , and the second portion of the switch beam 40 is suspended and opposite to the first electrode 21 with a gap, so that the second portion is displaced under driving and contacts the first electrode 21 .

[0090] When the switch 1 of the embodiment of the present application is applied to a circuit, the switch 1 can be connected in series to a branch in the circuit, for example, the capacitor 20 of the switch 1 can be connected in series to the first branch in the circuit. Moreover, the grounding layer 30 of the switch 1 is grounded. The circuit can also include a driving module, which can be electrically connected to the switch beam 40, and the driving module can send a driving signal to the switch beam 40. After receiving the driving signal, the switch beam 40 can generate displacement under the drive of the driving signal. When the driving module does not send a driving signal to the switch beam 40, there is a gap between the switch beam 40 and the capacitor 20, and the radio frequency signal entering the first branch can be output through the second electrode 22. In this case, the switch 1 is in a closed state, the first branch is a passage, and the radio frequency signal can be transmitted from one end of the first branch to the other end. After the driving module sends a driving signal to the switch beam 40, the switch beam 40 generates displacement after receiving the driving signal and contacts the capacitor 20. Since the switch beam 40 is disposed on the ground layer 30, the material of the switch beam 40 may include a conductive material, and the ground layer 30 is grounded, the radio frequency signal entering the first branch will be introduced into the ground layer 30, and cannot be output through the second electrode 22. In this case, the switch 1 is in an open state, the first branch is open, and the radio frequency signal cannot be transmitted from one end of the first branch to the other end. In this way, the closing and opening functions of the switch 1 can be realized.

[0091] Since the dielectric layer 23 of the switch 1 of the embodiment of the present application includes a first sub-dielectric layer 231 and a second sub-dielectric layer 232 arranged on the first sub-dielectric layer 231, and the second sub-dielectric layer 232 is usually a solid medium, its dielectric constant is greater than that of air, thereby increasing the dielectric constant of the dielectric layer 23, thereby increasing the capacitance of the capacitor 20, so that the switch 1 can be applied to high-power circuits.

[0092] In addition, in the process of manufacturing the switch 1, after providing the substrate 10, the second electrode 22, the dielectric layer 23 and the first electrode 21 can be sequentially manufactured on the substrate 10, and then the second through hole 28 is etched on the first electrode 21, and the first gap 27 is etched between the first electrode 21 and the second electrode 22 through the second through hole 28, and the third through hole 201 is etched on the dielectric layer 23, and the second gap 29 is etched between the first electrode 21 and the second electrode 22. In this way, the dielectric layer 23 of the switch 1 can be manufactured by the growth and etching manufacturing process, thereby making the manufacturing process of the dielectric layer 23 relatively simple, and further making the manufacturing process of the switch 1 relatively simple.

[0093] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A switch, characterized in that: include: substrate; A capacitor, the capacitor comprising a first electrode, a second electrode and a dielectric layer, the first electrode and the second electrode are arranged opposite to each other, the second electrode is arranged on the substrate, the dielectric layer is located between the first electrode and the second electrode, the dielectric layer comprises a first sub-dielectric layer and a second sub-dielectric layer arranged on the first sub-dielectric layer, one end of the first sub-dielectric layer contacts the second electrode, and an extension direction of the second sub-dielectric layer and an extension direction of the first sub-dielectric layer have an included angle; A grounding layer, the grounding layer is arranged on the substrate; A switch beam is disposed on the ground layer; the switch beam is used to maintain a gap between the switch beam and the capacitor, or to contact the capacitor when driven.

2. The switch according to claim 1, characterized in that: A first gap is formed between the second sub-dielectric layer and the first electrode.

3. The switch according to claim 1 or 2, characterized in that: A second gap is provided between the second sub-dielectric layer and the second electrode.

4. The switch according to any one of claims 1 to 3, characterized in that: One end of the first sub-dielectric layer facing away from the second electrode contacts the first electrode.

5. The switch according to claim 4, characterized in that: A first through hole is provided at a position of the first electrode in contact with the first sub-dielectric layer.

6. The switch according to claim 5, characterized in that: A cross-sectional area of ​​the first through hole is smaller than a cross-sectional area of ​​the first sub-dielectric layer.

7. The switch according to claim 2, characterized in that: The first electrode is also provided with a second through hole, and the second through hole is communicated with the first gap.

8. The switch according to claim 7, characterized in that The second sub-dielectric layer is provided with a third through hole, and the position of the third through hole corresponds to that of the second through hole.

9. The switch according to any one of claims 1 to 8, characterized in that: The first portion of the switch beam is disposed on the ground layer, and the second portion of the switch beam is suspended and opposite to the first electrode with a gap, so that the second portion is displaced under driving and contacts the first electrode.

10. A circuit, characterized in that: It comprises a driving module and the switch according to any one of claims 1 to 9, wherein a switch beam of the switch is electrically connected to the driving module.

11. A chip, characterized in that: Comprising the circuit of claim 10.

12. An electronic device, characterized in that: It comprises a circuit board and the chip according to claim 11, wherein the chip is electrically connected to the circuit board.

13. A method for manufacturing a switch, characterized in that: The production method comprises: providing a substrate; Sequentially fabricating a second electrode, a sacrificial layer and a first electrode on the substrate; A first gap and a second gap are etched on the sacrificial layer to obtain a dielectric layer, wherein the dielectric layer, the first electrode and the second electrode form a capacitor, the dielectric layer comprises a first sub-dielectric layer and a second sub-dielectric layer, the first gap is a gap between the second sub-dielectric layer and the first electrode, the second gap is a gap between the second sub-dielectric layer and the second electrode, and an angle is formed between an extension direction of the second sub-dielectric layer and an extension direction of the first sub-dielectric layer; forming a ground layer on the substrate; A switch beam is manufactured on the ground layer, and the switch beam is used to maintain a gap between the capacitor or to contact the capacitor under driving.

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