Gas monitoring and adjusting method and system for curing process of crystal component

Abstract

The invention relates to the field of automatic control, in particular to a gas monitoring and adjusting method and system for the curing process of a crystal component. And carrying out temperature stability analysis and oxygen content trend analysis according to the temperature data and the oxygen content data at the plurality of time points. And when the temperature is unstable or the oxygen content rises to a warning line, the temperature and the oxygen content in the curing tunnel furnace are automatically adjusted. Therefore, the situation that the quality of a batch of semi-finished quartz crystal components is reduced or scrapped due to the fact that the oxygen content rises to a high level or the temperature fluctuates abnormally is avoided. According to the invention, the yield of crystal components during production can be improved, the production cost is reduced, and the product quality is improved.

Description

Technical Field

[0001] The invention relates to the field of automatic control, and in particular to a gas monitoring and regulating method and system for a solidification process of a crystal component. Background Art

[0002] During the production of crystal components, the quartz wafer needs to undergo a variety of processing steps. For example, the quartz wafer needs to be electroplated and glued. After glue is applied, the semi-finished quartz crystal needs to be placed in a special tunnel furnace for curing.

[0003] In order to prevent oxidation of the electroplating layer and colloid during the curing process, the oxygen content inside the tunnel furnace needs to be kept at a low level, and the temperature needs to be kept stable. In the prior art, although the oxygen content and temperature inside the tunnel furnace are monitored in real time, the oxygen content and temperature will change because the internal gas is circulating. Once the oxygen content rises to a high level or the temperature fluctuates abnormally, all the quartz crystal semi-finished products in the tunnel furnace will deteriorate in quality or be scrapped, resulting in an increase in production costs. Summary of the invention

[0004] In view of this, an object of the present invention is to provide a gas monitoring and regulating method and system for the solidification process of crystal components to solve the problems in the background technology.

[0005] In order to achieve the above object, the present invention adopts the following technical solutions: A gas monitoring and regulating method for a solidification process of a crystal component of the present invention comprises the following steps: Acquire temperature data and oxygen content data at multiple time points in a current time period inside the curing tunnel furnace, wherein the current time period includes the current time point and a target number of time points before the current time point, the temperature data includes temperature values ​​at multiple locations inside the curing tunnel furnace, and the oxygen content data includes oxygen content values ​​at multiple locations inside the curing tunnel furnace; Determine the temperature stability of the current time period based on the temperature data at the multiple time points, and determine the oxygen content trend of the current time period based on the oxygen content data at the multiple time points; When the temperature in the current time period is unstable, the gas temperature inside the curing tunnel furnace is adjusted based on a preset temperature adjustment unit; when there is an upward trend in the oxygen content in the current time period and the oxygen content at the current time point triggers a warning line, the oxygen content inside the tunnel furnace body is adjusted based on a preset oxygen content adjustment unit.

[0006] In an embodiment of the present application, determining the temperature stability of the current time period based on the temperature data at the multiple time points includes: Calculate the average value of the temperature data corresponding to each time point to obtain the average temperature value at multiple time points ,in, Indicates the time point sequence number; Calculate the average temperature at each time point With the preset temperature reference value The absolute value of the difference ; Calculate the absolute value of the difference between multiple time points Variance and average ; In the variance is greater than a preset variance threshold, or the average value When the value is greater than a preset average value threshold, it is determined that the temperature in the current time period is unstable.

[0007] In one embodiment of the present application, determining the oxygen content trend of the current time period based on the oxygen content data at the multiple time points includes: Calculate the average value of the oxygen content data corresponding to each time point to obtain the average value of the oxygen content at multiple time points; Mapping the average oxygen content at multiple time points into a two-dimensional coordinate system, wherein the horizontal axis of the two-dimensional coordinate system is the time axis, and the vertical axis of the two-dimensional coordinate system is the oxygen content data axis; Slide along the time axis based on the pre-built sliding window, and calculate the average value of all oxygen content average values ​​in the sliding window at each sliding. ,in, is the sliding sequence number of the sliding window; For any two adjacent average values, , it is determined that there is an increasing trend of oxygen content in the current time period.

[0008] In one embodiment of the present application, adjusting the gas temperature inside the curing tunnel furnace based on a preset temperature adjustment unit includes: S11, calculating the temperature value at the current time point With the preset temperature reference value The difference ; S12, calculating the heat adjustment value inside the curing tunnel furnace based on the difference ,in, , is the specific heat capacity of the inert protective gas in the curing tunnel furnace, is the mass of the inert protective gas of the curing tunnel furnace; S13, based on the heat adjustment value Calculate the target temperature of the inert protective gas in the temperature control unit , ,in, is the mass of the inert protective gas in the temperature adjustment unit; S14, based on the target temperature Adjust the internal heat of the curing tunnel furnace and re-collect the temperature value at the target time point , wherein the target time point is the time point at which the temperature values ​​at multiple locations inside the curing tunnel furnace are the same; S15, calculate the temperature value at the target time point With the preset temperature reference value The difference ;exist , take the target time point as the current time point, and return to step S11 until ;exist When the temperature of the gas inside the curing tunnel furnace is adjusted, is the preset first temperature difference threshold.

[0009] In one embodiment of the present application, based on the target temperature The curing tunnel furnace is internally heat regulated, including: Calculate the target temperature With the preset temperature reference value The absolute value of the difference ; exist , heating the inert gas in the temperature regulating unit to the target temperature , open the exhaust end of the curing tunnel furnace and set it at the target temperature Inert gas is injected into the curing tunnel furnace to maintain the internal pressure balance of the curing tunnel furnace and complete the temperature regulation, wherein, is a preset second temperature difference threshold; exist , the difference Split and get or Temperature difference adjustment value, among which, ,or, , is the last temperature difference adjustment value; based on or The temperature of the inert gas in the temperature regulating unit is calculated based on a temperature difference adjustment value, the exhaust end of the curing tunnel furnace is opened, and the temperature regulator is heated to the corresponding temperature one by one and then injected into the curing tunnel furnace to maintain the internal air pressure balance of the curing tunnel furnace and complete the temperature regulation.

[0010] In one embodiment of the present application, the oxygen content inside the curing tunnel furnace is adjusted based on a preset oxygen content adjustment unit, including: S21, heating the temperature of the inert gas in the oxygen content adjustment unit to a temperature value at a current time point; S22, opening the exhaust end of the curing tunnel furnace, and injecting the inert gas heated to the temperature value at the current time point into the curing tunnel furnace; S23, updating the current time point, and re-determining the oxygen content trend of the current time period based on the oxygen content data of multiple time points in the current time period; S24, when the oxygen content in the current time period is still on an upward trend and the oxygen content at the current time point triggers the warning line, return to step S21 until the oxygen content in the current time period is no longer on an upward trend, or the oxygen content at the current time point is lower than the warning line; S25, when the oxygen content in the current time period does not show an upward trend, or when the oxygen content at the current time point is lower than the warning line, the oxygen content adjustment is completed.

[0011] In one embodiment of the present application, when the gas temperature inside the curing tunnel furnace cannot be adjusted, an alarm message is sent to the target object.

[0012] In one embodiment of the present application, when the oxygen content adjustment cannot be completed, an alarm message is sent to the target object.

[0013] In one embodiment of the present application, the curing tunnel furnace is provided with an air inlet end and an exhaust end, the air inlet end of the curing tunnel furnace is connected to the output end of the temperature regulating unit and the output end of the oxygen content regulating unit, and the input end of the temperature regulating unit and the input end of the oxygen content regulating unit are both connected to an inert gas source; The air inlet end of the curing tunnel furnace and the exhaust end of the curing tunnel furnace are both provided with electric control valves.

[0014] The present application also provides a gas monitoring and regulating system for a solidification process of a crystal component, comprising: An acquisition module, used to acquire temperature data and oxygen content data at multiple time points in a current time period inside the curing tunnel furnace, wherein the current time period includes the current time point and a target number of time points before the current time point, the temperature data includes temperature values ​​at multiple locations inside the curing tunnel furnace, and the oxygen content data includes oxygen content values ​​at multiple locations inside the curing tunnel furnace; A monitoring module, configured to determine the temperature stability of the current time period based on the temperature data at the multiple time points, and to determine the oxygen content trend of the current time period based on the oxygen content data at the multiple time points; The regulating module is used to regulate the gas temperature inside the curing tunnel furnace based on a preset temperature regulating unit when the temperature in the current time period is unstable; and to regulate the oxygen content inside the curing tunnel furnace based on a preset oxygen content regulating unit when there is an upward trend in the oxygen content in the current time period and the oxygen content at the current time point triggers a warning line.

[0015] The beneficial effects of the present invention are as follows: a gas monitoring and regulating method and system for the curing process of a crystal component of the present invention collects temperature data and oxygen content data in a curing tunnel furnace in real time, and performs temperature stability analysis and oxygen content trend analysis based on the temperature data and oxygen content data at multiple time points. When the temperature is unstable or the oxygen content rises to the warning line, the temperature and oxygen content in the curing tunnel furnace are automatically adjusted. This avoids the scrapping of a batch of quartz wafers due to the oxygen content rising to a high level or abnormal temperature fluctuations. The present application can improve the yield rate of crystal oscillators during production and reduce production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The present invention will be further described below in conjunction with the accompanying drawings and embodiments: Figure 1 is an application scenario diagram shown in an embodiment of the present application; Figure 2 It is a flow chart of a gas monitoring and regulating method for a solidification process of a crystal component shown in an embodiment of the present application; Figure 3 It is a structural diagram of a gas monitoring and regulating system for a solidification process of a crystal component shown in an embodiment of the present application; The reference numerals are as follows: 110 - curing tunnel furnace, 120 - air inlet end, 130 - exhaust end, 140 - regulating unit, 150 - inert gas source, 160 - electric control valve, 170 - temperature sensor, 180 - oxygen concentration sensor, 190 - control host. DETAILED DESCRIPTION

[0017] The following describes the embodiments of the present invention by specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0018] It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present invention, and thus the drawings only show the layers related to the present invention rather than being drawn according to the number, shape and size of the layers in actual implementation. In actual implementation, the type, quantity and proportion of each layer may be changed arbitrarily, and the layer layout may also be more complicated.

[0019] In the following description, numerous details are discussed to provide a more thorough explanation of embodiments of the present invention; however, it is apparent to one skilled in the art that embodiments of the present invention may be practiced without these specific details.

[0020] The curing process is required during the production of crystal oscillators. The main function of quartz crystal curing is to ensure a stable connection between the quartz crystal and the external base or bracket, which is essential for maintaining the performance of the quartz crystal resonator. The curing process usually involves using conductive glue to fix the quartz crystal on the base. This process not only provides mechanical fixation, but also achieves electrical connection.

[0021] The present application uses a tunnel furnace to create a condition of stable temperature, humidity and low oxygen content to solidify the quartz wafer. In the present application, a circulation system is provided inside the tunnel furnace, and a fan is used to make the internal inert gas (such as nitrogen) flow, so as to make the temperature and oxygen content inside the tunnel furnace uniform.

[0022] Figure 1 is an application scenario diagram shown in an embodiment of the present application, such as Figure 1 As shown, the present application adjusts the temperature and oxygen concentration in the curing tunnel furnace 110 by setting an adjustment unit 140, and the adjustment unit 140 serves as a temperature adjustment unit and an oxygen concentration adjustment unit at the same time. A temperature control module and a heating module are arranged inside the adjustment unit 140.

[0023] The curing tunnel furnace 110 is provided with an air inlet end 120 and an exhaust end 130. The air inlet end 120 of the curing tunnel furnace 110 is connected to the output end of the regulating unit 140, and the input end of the regulating unit 140 is connected to the inert gas source 150. The air inlet end and the exhaust end of the curing tunnel furnace 110 are both provided with an electric control valve 160. Temperature sensors 170 and oxygen concentration sensors 180 are provided at multiple positions inside the curing tunnel furnace 110, and the electric control valve 160, the temperature sensor 170, the oxygen concentration sensor 180, and the temperature control module are all connected to the control host 190. The control host 190 analyzes the temperature data and oxygen concentration data collected by the temperature sensor 170 and the oxygen concentration sensor 180. The electric control valve 160 and the temperature control module are controlled based on the analysis results. Thereby, temperature adjustment or oxygen concentration adjustment is performed. The specific implementation process is as follows.

[0024] Figure 2 FIG. 1 is a flow chart of a gas monitoring and regulating method for a solidification process of a crystal component shown in an embodiment of the present application. Figure 2 As shown, a gas monitoring and regulating method for a solidification process of a crystal component of this embodiment may include the following steps: S210, acquiring temperature data and oxygen content data at multiple time points in the current time period inside the curing tunnel furnace, wherein the current time period includes the current time point and a target number of time points before the current time point, the temperature data includes temperature values ​​at multiple locations inside the curing tunnel furnace, and the oxygen content data includes oxygen content values ​​at multiple locations inside the curing tunnel furnace; In this application, the temperature values ​​and oxygen content values ​​at multiple locations in the curing tunnel furnace are collected by controlling the host computer at regular intervals, thereby obtaining temperature data and oxygen content data. Since the curing tunnel furnace is constantly circulating, in general, the temperature values ​​and oxygen content values ​​at multiple locations in the curing tunnel furnace are the same.

[0025] S220, determining the temperature stability of the current time period based on the temperature data at the multiple time points, and determining the oxygen content trend of the current time period based on the oxygen content data at the multiple time points; In some cases, the temperature inside the curing tunnel furnace will fluctuate. For example, the control of the heating elements (such as resistance wires, heating plates, etc.) is not precise enough, which may cause temperature fluctuations. For example, improper parameter settings of the PID controller or aging of the heating elements may lead to inaccurate temperature control. Changes in the external ambient temperature will also affect the temperature inside the tunnel furnace. Especially in the absence of good insulation measures, fluctuations in external temperature will be more easily transmitted to the tunnel furnace, causing temperature changes. If the temperature is not properly controlled, whether it is too high or too low, it may cause a series of problems that affect the performance and quality of the final product. For example, too high a temperature will cause material damage, increased stress, frequency shift, etc., and too low a temperature will cause incomplete curing, insufficient bonding strength, stress concentration, etc. Unstable temperature will lead to uneven curing of quartz wafers, uneven stress distribution, reduced frequency stability, reduced electrical performance, and reduced long-term reliability.

[0026] During the curing of the quartz wafer colloid, if there is a problem with the sealing of the tunnel furnace, the outside air (oxygen content is about 21%) will enter the tunnel furnace, resulting in an increase in the internal oxygen content. In addition, in some cases, changes in temperature can affect the solubility and diffusion rate of gases. Under high temperature conditions, the solubility of some gases decreases and may escape from the solution or solid material into the gas phase, which may include oxygen. This leads to an increase in the oxygen content. If the oxygen content is too high, it may cause an oxidation reaction, which will lead to a decrease in the performance of the conductive adhesive. In addition, there is also a layer of oxide formed on the surface of the material. The thermal expansion coefficient of this oxide layer is different from that of the raw material, resulting in increased thermal stress. Thermal stress may cause microcracks or deformation of the quartz wafer, affecting its mechanical strength and frequency stability. The formation of the oxide layer and the change in material properties may cause the resonant frequency of the quartz wafer to change, causing frequency drift. This will reduce the frequency stability of the quartz crystal resonator, making it unable to achieve the expected performance in precision applications. The formation of the oxide layer may cause the conductive properties of the conductive adhesive to decrease, increase the contact resistance, and affect the reliability of the electrical connection.

[0027] In this application, the temperature stability of the current time period is analyzed based on the following process, including: S2201, calculate the average value of the temperature data corresponding to each time point, and obtain the average temperature value of multiple time points ,in, Indicates the time point sequence number; S2202, calculate the average temperature at each time point With the preset temperature reference value The absolute value of the difference ; It reflects the difference between the average temperature at each time point and the set value. Generally, PID control is used to maintain a stable constant in the curing tunnel furnace. The value is relatively small, but if an abnormality occurs, such as heater abnormality or sealing abnormality, it may be difficult to maintain a constant temperature through the system itself.

[0028] S2203, calculating the absolute value of the difference between multiple time points Variance and average ; This application extracts the variance to reflect the stability of the temperature difference, and extracts the average value to reflect the overall level of the temperature difference.

[0029] S2204, in the variance is greater than a preset variance threshold, or the average value When the value is greater than a preset average value threshold, it is determined that the temperature in the current time period is unstable.

[0030] In order to ensure the constant temperature inside the curing tunnel furnace, this application adopts heat conversion to compensate the heat inside the curing tunnel furnace when the temperature stability is poor or the temperature difference is large. This method is combined with the existing PID control to inject inert gas of different temperatures from the outside, so as to achieve the temperature maintenance of the inside and outside.

[0031] In addition, oxygen content is different from temperature analysis. Under normal circumstances, oxygen content cannot reach a high level, which will cause irreversible oxidation reaction of quartz wafer. Therefore, this application uses trend analysis to find the rising trend of oxygen content and intervenes in time to adjust before the oxygen content reaches a high level. This application analyzes the trend of oxygen content in the current time period based on the following process, including: S2211, calculating the average value of the oxygen content data corresponding to each time point to obtain the average value of the oxygen content at multiple time points; S2212, mapping the average oxygen content at multiple time points into a two-dimensional coordinate system, wherein the horizontal axis of the two-dimensional coordinate system is the time axis, and the vertical axis of the two-dimensional coordinate system is the oxygen content data axis; S2213, sliding along the time axis based on the pre-built sliding window, and calculating the average value of all oxygen content average values ​​in the sliding window during each sliding. ,in, is the sliding sequence number of the sliding window; S2214, for any two adjacent average values ​​satisfy , it is determined that there is an increasing trend of oxygen content in the current time period.

[0032] In order to avoid the influence of data changes at a single time point on the judgment of the overall trend, this application adopts a sliding window method to analyze the changing trend of oxygen content. By calculating the average value of multiple time points in the sliding window, the average value reflects the oxygen content level in the corresponding time period of the sliding window. The overall level of multiple time periods is judged incrementally to determine whether there is an upward trend.

[0033] In addition, if it increases unidirectionally within a lower level, it will not affect the curing process. Therefore, the judgment and adjustment of this application include: (1) an upward trend; (2) triggering a warning line. The warning line is lower than the higher level mentioned above and is only used as a screening parameter.

[0034] S230, when the temperature in the current time period is unstable, the gas temperature inside the curing tunnel furnace is adjusted based on a preset temperature adjustment unit; when there is an upward trend in the oxygen content in the current time period and the oxygen content at the current time point triggers a warning line, the oxygen content inside the curing tunnel furnace is adjusted based on a preset oxygen content adjustment unit.

[0035] When the temperature is found to be unstable or the oxygen content is abnormal as mentioned above, adjustments are made in the following manner.

[0036] The gas temperature inside the curing tunnel furnace is adjusted based on a preset temperature adjustment unit, including: S11, calculating the temperature value at the current time point With the preset temperature reference value The difference ; S12, calculating the heat adjustment value inside the curing tunnel furnace based on the difference ,in, , is the specific heat capacity of the inert protective gas in the curing tunnel furnace, is the mass of the inert protective gas of the curing tunnel furnace; The temperature value at the current time point With the preset temperature reference value The heat corresponding to the temperature difference is that the temperature inside the tunnel furnace is adjusted based on the external adjustment unit. Converted into adjustment units.

[0037] S13, based on the heat adjustment value Calculate the target temperature of the inert protective gas in the temperature control unit , ,in, is the mass of the inert protective gas in the temperature adjustment unit; To convert the heat corresponding to the temperature difference into the temperature of the regulating unit. To heat the regulating unit to the temperature reference value The required heat. Based on this heat, increase the adjustment amount , get the adjusted heat . Then convert it into temperature in the adjustment unit to get the target temperature .

[0038] S14, based on the target temperature Adjust the internal heat of the curing tunnel furnace and re-collect the temperature value at the target time point , wherein the target time point is the time point at which the temperature values ​​at multiple locations inside the curing tunnel furnace are the same; In this application, since the volume of the regulating unit is much smaller than the curing tunnel furnace, in order to compensate for the heat, it is possible that the temperature inside the regulating unit is too high or too low. If it is directly injected, it may cause a large change in the local temperature in the curing tunnel furnace, which may damage the quartz wafer. Therefore, this application adopts the following method for direct regulation: S141, calculating the target temperature With the preset temperature reference value The absolute value of the difference ; S142, in , heating the inert gas in the temperature regulating unit to the target temperature , open the exhaust end of the curing tunnel furnace and set it at the target temperature Inert gas is injected into the curing tunnel furnace to maintain the internal pressure balance of the curing tunnel furnace and complete the temperature regulation, wherein, is a preset second temperature difference threshold; S143, in , the difference Split and get or Temperature difference adjustment value, among which, ,or, , is the last temperature difference adjustment value; based on or The temperature of the inert gas in the temperature regulating unit is calculated based on a temperature difference adjustment value, the exhaust end of the curing tunnel furnace is opened, and the temperature regulator is heated to the corresponding temperature one by one and then injected into the curing tunnel furnace to maintain the internal air pressure balance of the curing tunnel furnace and complete the temperature regulation.

[0039] exist , indicating that the temperature difference between the conditioning unit and the curing tunnel furnace is large at this time. In order to avoid large local temperature changes caused by direct injection, this application splits the difference and calculates the heat separately. , ,or, , the corresponding temperature difference adjustment value for . Calculate the temperature difference adjustment value of multiple adjustments , and then adjust it several times. After each adjustment, if the temperature inside the curing tunnel furnace is the same everywhere, it means that the gas mixing is complete, and the next adjustment is carried out.

[0040] S15, calculate the temperature value at the target time point With the preset temperature reference value The difference ;exist , take the target time point as the current time point, and return to step S11 until ;exist When the temperature of the gas inside the curing tunnel furnace is adjusted, is the preset first temperature difference threshold.

[0041] Finally, the present application adopts a cyclic adjustment method. If the adjustment target is reached, the adjustment is stopped. If not, the adjustment is performed again. Thus, the temperature inside the curing tunnel furnace is always close to the set value.

[0042] In one embodiment of the present application, the oxygen content inside the curing tunnel furnace is adjusted based on a preset oxygen content adjustment unit, including: S21, heating the temperature of the inert gas in the oxygen content adjustment unit to a temperature value at a current time point; S22, opening the exhaust end of the curing tunnel furnace, and injecting the inert gas heated to the temperature value at the current time point into the curing tunnel furnace; S23, updating the current time point, and re-determining the oxygen content trend of the current time period based on the oxygen content data of multiple time points in the current time period; S24, when the oxygen content in the current time period is still on an upward trend and the oxygen content at the current time point triggers the warning line, return to step S21 until the oxygen content in the current time period is no longer on an upward trend, or the oxygen content at the current time point is lower than the warning line; S25, when the oxygen content in the current time period does not show an upward trend, or when the oxygen content at the current time point is lower than the warning line, the oxygen content adjustment is completed.

[0043] Since the purity of the inert gas in the inert gas source is generally fixed, and the adjustment process only needs to consider reducing the oxygen content. Therefore, the present application only needs to heat the gas to the temperature value at the current time point. Then, the heated inert gas in the adjustment unit is continuously injected into the curing tunnel furnace, which can effectively reduce the oxygen content in the curing tunnel furnace.

[0044] In the above process, if continuous adjustment is performed within a period of time and the gas temperature inside the curing tunnel furnace cannot be adjusted, an alarm message is sent to the target object. Or if the oxygen content adjustment cannot be completed, an alarm message is sent to the target object. This prompts relevant personnel to check the equipment status in time.

[0045] The gas monitoring and regulating method for the curing process of a crystal component of the present invention collects temperature data and oxygen content data in a curing tunnel furnace in real time, and performs temperature stability analysis and oxygen content trend analysis based on the temperature data and oxygen content data at multiple time points. When the temperature is unstable or the oxygen content rises to the warning line, the temperature and oxygen content in the curing tunnel furnace are automatically adjusted. This avoids the scrapping of a batch of quartz wafers due to the oxygen content rising to a high level or abnormal temperature fluctuations. The present application can improve the yield rate of crystal oscillators during production and reduce production costs.

[0046] like Figure 3 As shown, the present application also provides a gas monitoring and regulating system for the solidification process of a crystal component, comprising: An acquisition module, used to acquire temperature data and oxygen content data at multiple time points in a current time period inside the curing tunnel furnace, wherein the current time period includes the current time point and a target number of time points before the current time point, the temperature data includes temperature values ​​at multiple locations inside the curing tunnel furnace, and the oxygen content data includes oxygen content values ​​at multiple locations inside the curing tunnel furnace; A monitoring module, configured to determine the temperature stability of the current time period based on the temperature data at the multiple time points, and to determine the oxygen content trend of the current time period based on the oxygen content data at the multiple time points; The regulating module is used to regulate the gas temperature inside the curing tunnel furnace based on a preset temperature regulating unit when the temperature in the current time period is unstable; and to regulate the oxygen content inside the curing tunnel furnace based on a preset oxygen content regulating unit when there is an upward trend in the oxygen content in the current time period and the oxygen content at the current time point triggers a warning line.

[0047] The gas monitoring and regulating system for the curing process of a crystal component of the present invention collects temperature data and oxygen content data in a curing tunnel furnace in real time, and performs temperature stability analysis and oxygen content trend analysis based on the temperature data and oxygen content data at multiple time points. When the temperature is unstable or the oxygen content rises to the warning line, the temperature and oxygen content in the curing tunnel furnace are automatically adjusted. This avoids the scrapping of a batch of quartz wafers due to the oxygen content rising to a high level or abnormal temperature fluctuations. The present application can improve the yield rate of crystal oscillators during production and reduce production costs.

[0048] This embodiment also provides an electronic terminal, including: a processor and a memory; The memory is used to store a computer program, and the processor is used to execute the computer program stored in the memory, so that the terminal executes any one of the methods in this embodiment.

[0049] The computer-readable storage medium in this embodiment can be understood by ordinary technicians in this field: all or part of the steps of implementing the above-mentioned method embodiments can be completed by hardware related to the computer program. The aforementioned computer program can be stored in a computer-readable storage medium. When the program is executed, the steps of the above-mentioned method embodiments are executed; and the aforementioned storage medium includes: ROM, RAM, magnetic disk or optical disk and other media that can store program codes.

[0050] The electronic terminal provided in this embodiment includes a processor, a memory, a transceiver and a communication interface. The memory and the communication interface are connected to the processor and the transceiver and complete communication with each other. The memory is used to store computer programs, the communication interface is used to communicate, and the processor and the transceiver are used to run computer programs so that the electronic terminal executes each step of the above method.

[0051] In this embodiment, the memory may include a random access memory (RAM), and may also include a non-volatile memory (non-volatile memory), such as at least one disk memory.

[0052] The above-mentioned processor can be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it can also be a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.

[0053] In the above-mentioned embodiments, although the present invention has been described in conjunction with the specific embodiments of the present invention, many replacements, modifications and variations of these embodiments will be apparent to those of ordinary skill in the art based on the foregoing description. The embodiments of the present invention are intended to cover all such replacements, modifications and variations falling within the broad scope of the appended claims.

[0054] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A gas monitoring and regulating method for the solidification process of a crystal component, characterized in that: Includes steps: Acquire temperature data and oxygen content data at multiple time points in a current time period inside the curing tunnel furnace, wherein the current time period includes the current time point and a target number of time points before the current time point, the temperature data includes temperature values ​​at multiple locations inside the curing tunnel furnace, and the oxygen content data includes oxygen content values ​​at multiple locations inside the curing tunnel furnace; Determine the temperature stability of the current time period based on the temperature data at the multiple time points, and determine the oxygen content trend of the current time period based on the oxygen content data at the multiple time points; When the temperature in the current time period is unstable, the gas temperature inside the curing tunnel furnace is adjusted based on a preset temperature adjustment unit; when there is an upward trend in the oxygen content in the current time period and the oxygen content at the current time point triggers a warning line, the oxygen content inside the curing tunnel furnace is adjusted based on a preset oxygen content adjustment unit.

2. The gas monitoring and regulating method for the solidification process of a crystal component according to claim 1, characterized in that: Determining the temperature stability of the current time period based on the temperature data of the multiple time points includes: Calculate the average value of the temperature data corresponding to each time point to obtain the average temperature value at multiple time points ,in, Indicates the time point sequence number; Calculate the average temperature at each time point With the preset temperature reference value The absolute value of the difference ; Calculate the absolute value of the difference between multiple time points Variance and average ; In the variance is greater than a preset variance threshold, or the average value When the value is greater than a preset average value threshold, it is determined that the temperature in the current time period is unstable.

3. The gas monitoring and regulating method for the solidification process of a crystal component according to claim 1, characterized in that: Determining the oxygen content trend of the current time period based on the oxygen content data at the multiple time points includes: Calculate the average value of the oxygen content data corresponding to each time point to obtain the average value of the oxygen content at multiple time points; Mapping the average oxygen content at multiple time points into a two-dimensional coordinate system, wherein the horizontal axis of the two-dimensional coordinate system is the time axis, and the vertical axis of the two-dimensional coordinate system is the oxygen content data axis; Slide along the time axis based on the pre-built sliding window, and calculate the average value of all oxygen content average values ​​in the sliding window at each sliding. ,in, is the sliding sequence number of the sliding window; For any two adjacent average values, , it is determined that there is an increasing trend of oxygen content in the current time period.

4. The gas monitoring and regulating method for the solidification process of a crystal component according to claim 1, characterized in that: The gas temperature inside the curing tunnel furnace is adjusted based on a preset temperature adjustment unit, including: S11, calculating the temperature value at the current time point With the preset temperature reference value The difference ; S12, calculating the heat adjustment value inside the curing tunnel furnace based on the difference ,in, , is the specific heat capacity of the inert protective gas in the curing tunnel furnace, is the mass of the inert protective gas of the curing tunnel furnace; S13, based on the heat adjustment value Calculate the target temperature of the inert protective gas in the temperature control unit , ,in, is the mass of the inert protective gas in the temperature adjustment unit; S14, based on the target temperature Adjust the internal heat of the curing tunnel furnace and re-collect the temperature value at the target time point , wherein the target time point is the time point at which the temperature values ​​at multiple locations inside the curing tunnel furnace are the same; S15, calculate the temperature value at the target time point With the preset temperature reference value The difference ;exist , take the target time point as the current time point, and return to step S11 until ;exist When the temperature of the gas inside the curing tunnel furnace is adjusted, is the preset first temperature difference threshold.

5. The gas monitoring and regulating method for the solidification process of a crystal component according to claim 4, characterized in that: Based on the target temperature The curing tunnel furnace is internally heat regulated, including: Calculate the target temperature With the preset temperature reference value The absolute value of the difference ; exist , heating the inert gas in the temperature regulating unit to the target temperature , open the exhaust end of the curing tunnel furnace and set it at the target temperature Inert gas is injected into the curing tunnel furnace to maintain the internal pressure balance of the curing tunnel furnace and complete the temperature regulation, wherein, is a preset second temperature difference threshold; exist , the difference Split and get or Temperature difference adjustment value, among which, ,or, , is the last temperature difference adjustment value; based on or The temperature of the inert gas in the temperature regulating unit is calculated based on a temperature difference adjustment value, the exhaust end of the curing tunnel furnace is opened, and the temperature regulator is heated to the corresponding temperature one by one and then injected into the curing tunnel furnace to maintain the internal air pressure balance of the curing tunnel furnace and complete the temperature regulation.

6. The gas monitoring and regulating method for the solidification process of a crystal component according to claim 1, characterized in that: The oxygen content inside the curing tunnel furnace is adjusted based on a preset oxygen content adjustment unit, including: S21, heating the temperature of the inert gas in the oxygen content adjustment unit to a temperature value at a current time point; S22, opening the exhaust end of the curing tunnel furnace, and injecting the inert gas heated to the temperature value at the current time point into the curing tunnel furnace; S23, updating the current time point, and re-determining the oxygen content trend of the current time period based on the oxygen content data of multiple time points in the current time period; S24, when the oxygen content in the current time period is still on an upward trend and the oxygen content at the current time point triggers the warning line, return to step S21 until the oxygen content in the current time period is no longer on an upward trend, or the oxygen content at the current time point is lower than the warning line; S25, when the oxygen content in the current time period does not show an upward trend, or when the oxygen content at the current time point is lower than the warning line, the oxygen content adjustment is completed.

7. The gas monitoring and regulating method for the solidification process of a crystal component according to claim 4, characterized in that: When the gas temperature inside the curing tunnel furnace cannot be adjusted, an alarm message is sent to the target object.

8. The method for monitoring and regulating gas during the solidification process of a crystal component according to claim 6, characterized in that: When the oxygen content adjustment cannot be completed, an alarm message is sent to the target object.

9. The gas monitoring and regulating method for the solidification process of a crystal component according to claim 1, characterized in that: The curing tunnel furnace is provided with an air inlet end and an exhaust end, the air inlet end of the curing tunnel furnace is connected to the output end of the temperature regulating unit and the output end of the oxygen content regulating unit, and the input end of the temperature regulating unit and the input end of the oxygen content regulating unit are both connected to an inert gas source; The air inlet end of the curing tunnel furnace and the exhaust end of the curing tunnel furnace are both provided with electric control valves.

10. A gas monitoring and regulating system for the solidification process of a crystal component, characterized in that: include: An acquisition module, used to acquire temperature data and oxygen content data at multiple time points in a current time period inside the curing tunnel furnace, wherein the current time period includes the current time point and a target number of time points before the current time point, the temperature data includes temperature values ​​at multiple locations inside the curing tunnel furnace, and the oxygen content data includes oxygen content values ​​at multiple locations inside the curing tunnel furnace; A monitoring module, configured to determine the temperature stability of the current time period based on the temperature data at the multiple time points, and to determine the oxygen content trend of the current time period based on the oxygen content data at the multiple time points; The regulating module is used to regulate the gas temperature inside the curing tunnel furnace based on a preset temperature regulating unit when the temperature in the current time period is unstable; and to regulate the oxygen content inside the curing tunnel furnace based on a preset oxygen content regulating unit when there is an upward trend in the oxygen content in the current time period and the oxygen content at the current time point triggers a warning line.

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