Substrate processing apparatus and substrate processing method

Abstract

The invention relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes: a chamber; a substrate support unit installed in the processing space inside the chamber to enable rotation of one or more substrates; a first gas injection unit for injecting a source gas on a first region of the processing space; a second gas injection unit for injecting a reaction gas on a second region of the processing space, the reaction gas reacting with the source gas on the second region; and a third gas injection unit for injecting a purge gas on the third region, the purge gas dividing the first region and a second region in which the plasma is formed.

Description

[0001] This application is a divisional application of the invention patent application with the application date of November 14, 2019, application number 201980068515.6, and invention name “Substrate processing device and substrate processing method”. Technical Field

[0002] The present invention relates to a substrate processing apparatus for performing processing processes such as a deposition process and an etching process on a substrate. Background Art

[0003] Generally, a thin film layer, a thin film circuit pattern, or an optical pattern should be formed on a substrate in order to manufacture a solar cell, a semiconductor device, a flat panel display device, etc. For this purpose, a treatment process is performed, examples of which include a deposition process for depositing a thin film containing a specific material on a substrate, an optical process for selectively exposing a portion of the thin film by using a photosensitive material, an etching process for removing the selectively exposed portion of the thin film to form a pattern, etc.

[0004] The process of forming a thin film on a substrate or removing a thin film is performed by supplying a gas for forming a specific material, a gas for selectively removing a specific material, or a corresponding material to the substrate. In particular, the thin film forming process may be performed by supplying a source gas and a reaction gas for forming a specific material, in which case the source gas and the reaction gas may be supplied to the substrate at the same time, or may be supplied to the substrate sequentially with a time difference.

[0005] As the semiconductor device manufacturing process develops to fine processes, various methods for forming uniform thin films or patterns on fine patterns formed on the surface of a substrate are being adopted, one of which is an atomic layer deposition (ALD) process. The ALD process is a process in which source gas and reaction gas are not provided at the same time, but the source gas and reaction gas are provided with a time difference so as to only induce a reaction on the surface of the substrate and form a thin film on the substrate by the reaction between the source gas and the reaction gas. First, the source gas can be adsorbed onto the surface of the substrate by providing the source gas to the substrate, and then the other source gases can be removed by the purge gas. Subsequently, by providing the reaction gas to the substrate, the reaction gas can react with the source gas adsorbed onto the surface of the substrate, and then the other reaction gases can be purified by the purge gas. In the step of providing the reaction gas, an atomic layer or a monolayer film is formed on the surface of the substrate based on the reaction between the source gas and the reaction gas. This process can be repeated until the desired thickness is reached, thereby forming a film with a determined thickness on the surface of the substrate.

[0006] However, in the ALD process, since a reaction between a source gas and a reaction gas is performed only on the surface of a substrate, there is a disadvantage that a speed of depositing a thin film is lower than that of a general chemical vapor deposition (CVD) process or the like.

[0007] In addition, the process of rapidly repeating the steps of supplying source gas to the same processing space, purifying the supplied source gas, supplying reaction gas, and purging the reaction gas has the disadvantage of being time-consuming. In the case of the rapidly repeated process, the supplied source gas or reaction gas is not completely discharged (purged) from the processing space to the outside of the chamber, and thus, an atomic layer film is not formed, resulting in a defect that the two gases meet each other to form a CVD film.

[0008] In a process of rapidly supplying a source gas or a reaction gas and an ALD process based on the source gas or the reaction gas, a structure in which the two gases are not mixed during the process and a pure ALD film are required. Summary of the invention

[0009] Technical issues

[0010] The present invention solves the above problems by providing a process chamber design in which source gases and reactant gases do not mix within the space.

[0011] Furthermore, the present invention solves the technical problem by providing an apparatus for providing a fast processing method when forming a thin film by an ALD process.

[0012] Furthermore, the present invention solves the technical problem by providing an apparatus for densifying a certain thin film or improving the film quality by forming a film (pure ALD layer) using a pure ALD process on a substrate.

[0013] In addition, the present invention solves the technical problem by providing a device, which purifies the reaction gas remaining on the substrate in a purification gas space for separating the source gas space and the reaction gas space so that it can be quickly moved from the reaction gas space to the source gas space, and at the same time provides plasma to a part of the purification gas supply unit, wherein the purification gas supply unit provides a purification gas for quickly purifying impurities of the generated thin film.

[0014] Technical Solution

[0015] In order to solve the above technical problems, a substrate processing device according to the present invention may include: a chamber; a substrate supporting unit, which is rotatably installed in a processing space of the chamber to support one or more substrates; a first gas injection unit, which is used to inject a source gas into a first area of ​​the processing space; a second gas injection unit, which is used to inject a reaction gas into a second area of ​​the processing space, and the reaction gas reacts with the source gas; and a third gas injection unit, which is used to inject a purification gas into a third area, and the purification gas divides the first area and the second area.

[0016] The substrate processing method according to the present invention may include the following steps: when a first substrate is disposed in a first area of ​​a processing space of a chamber, a source gas is sprayed into the first area to perform an adsorption process; when the adsorption process is completed, a substrate supporting unit for supporting the first substrate is rotated to dispose the first substrate in a second area of ​​the processing space of the chamber; when the first substrate is disposed in the second area, a reaction gas is sprayed into the second area to perform a deposition process; and when the deposition process is completed, the substrate supporting unit is rotated to dispose the first substrate in the first area, wherein the step of performing the deposition process may spray a reaction gas excited by plasma into the second area to perform the deposition process.

[0017] According to the present invention, the substrate processing method may include the following steps: when a first substrate is set in a first area of ​​a processing space of a chamber, a source gas is sprayed into the first area to perform an adsorption process; a substrate supporting unit for supporting the first substrate is rotated to set the first substrate in a second area of ​​the processing space of the chamber; when the first substrate is set in the second area, a reaction gas is sprayed into the second area to perform a deposition process; and the substrate supporting unit is rotated to set the first substrate in the first area, wherein in the step of rotating the substrate supporting unit for supporting the first substrate to set the first substrate in the second area of ​​the processing space of the chamber, plasma processing is performed on the first substrate adsorbed with the source gas.

[0018] According to the present invention, the substrate processing method may include the following steps: when a first substrate is set in a first area of ​​a processing space of a chamber, a source gas is sprayed into the first area to perform an adsorption process; a substrate supporting unit for supporting the first substrate is rotated to set the first substrate in a second area of ​​the processing space of the chamber; when the first substrate is set in the second area, a reaction gas is sprayed into the second area to perform a deposition process; and the substrate supporting unit is rotated to set the first substrate in the first area, wherein in the step of rotating the substrate supporting unit to set the first substrate in the first area, plasma processing is performed on the first substrate having a deposited film formed thereon.

[0019] According to the present invention, the substrate processing method may include the following steps: when a first substrate is set in a first area of ​​a processing space of a chamber, a source gas is sprayed into the first area to perform an adsorption process; a substrate supporting unit for supporting the first substrate is rotated to set the first substrate in a second area of ​​the processing space of the chamber; when the first substrate is set in the second area, a reaction gas is sprayed into the second area to perform a deposition process; and the substrate supporting unit is rotated to set the first substrate in the first area, wherein in the step of rotating the substrate supporting unit for supporting the first substrate to set the first substrate in the second area of ​​the processing space of the chamber, plasma treatment is performed on the first substrate on which the source gas is adsorbed, wherein in the step of rotating the substrate supporting unit to set the first substrate in the first area, plasma treatment is performed on the first substrate on which a deposited film is formed.

[0020] According to the present invention, a substrate processing device may include: a chamber; a substrate supporting unit, which is rotatably installed in a processing space of the chamber to support one or more substrates; a first gas injection unit, which is used to inject a source gas into a first area of ​​the processing space; a second gas injection unit, which is used to inject a reaction gas into a second area of ​​the processing space, and the reaction gas reacts with the source gas; and a third gas injection unit, which is used to inject a purification gas into a third area, and the purification gas divides the first area and the second area, wherein plasma is formed in the second area.

[0021] Beneficial Effects

[0022] According to a solution to the above problem, the substrate processing apparatus according to the present invention can form a pure ALD film by completely dividing the processing space of the chamber into a source gas injection space and a reaction gas injection space and a purification gas injection space.

[0023] In addition, the substrate processing apparatus according to the present invention can utilize the plasma gas ejected from the third gas injection unit serving as the purification gas injection space to purify impurities of the thin film generated on the substrate, and can utilize the purification gas ejected from the third gas injection unit to completely purify the processing gas (i.e., source gas or reaction gas) remaining between patterns of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 is a plan view schematically showing the shape of a substrate processing apparatus according to an embodiment of the present invention.

[0025] Figure 2 is a view describing an upper cover of a chamber in a substrate processing apparatus according to an embodiment of the present invention.

[0026] Figure 3A and 3B The invention is to describe an upper cover of a chamber in a substrate processing apparatus according to an embodiment of the present invention. Figure 1 A schematic side cross-sectional view taken along line AA.

[0027] Figure 4 The invention is to describe an upper cover of a chamber in a substrate processing apparatus according to an embodiment of the present invention. Figure 2 A schematic side cross-sectional view taken along line A'-A'.

[0028] Figure 5 The invention is to describe an upper cover of a chamber in a substrate processing apparatus according to an embodiment of the present invention. Figure 2 Another schematic side cross-sectional view taken along line A'-A'.

[0029] Figure 6 is a schematic bottom view of an upper cover of a chamber in a substrate processing apparatus according to an embodiment of the present invention.

[0030] Figure 7 is a schematic plan cross-sectional view of a third gas injection unit in a substrate processing apparatus according to an embodiment of the present invention.

[0031] Figure 8 is a diagram showing the arrangement of an embodiment based on the area to which the plasma gas is injected.

[0032] Figures 9 to 14B is a schematic plan view of a substrate supporting unit in a substrate processing apparatus according to an embodiment of the present invention.

[0033] Fig.15 is a schematic flow chart of a substrate processing method according to the present invention. DETAILED DESCRIPTION

[0034] Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings.

[0035] Figure 1 is a plan view schematically showing the shape of a substrate processing apparatus according to an embodiment of the present invention. Figure 2 This is a plan view of the upper cover when viewed from above the cavity with the upper surface cut open.

[0036] Reference Figures 1 to 5 In the substrate processing apparatus according to the present invention, a processing space 1 may be provided in a chamber. An upper cover may be provided in an upper portion of the processing space 1 of the chamber, and a substrate supporting unit 600 may be provided in a lower portion of the processing space 1 of the chamber. One or more substrates may be provided in the substrate supporting unit 600.

[0037] The processing space 1 of the chamber may be divided into a first area 10, a second area 20, and a third area 30. A first gas injection unit 100 for injecting a source gas toward the first area 10 may be disposed in the first area 10. A second gas injection unit 200 for injecting a reaction gas reacting with the source gas toward the second area 20 may be disposed in the second area 20. The first gas injection unit 100 and the second gas injection unit 200 may be coupled to an upper cover.

[0038] A third area 30 that divides the processing space 1 of the chamber into the first area 10 and the second area 20 may be provided. The third area 30 may divide the processing space 1 of the chamber into the first area 10 and the second area 20 so that the source gas as the processing gas in the first area 10 is not mixed with the reaction gas as the processing gas in the second area 20. A third gas injection unit 300 for injecting a purge gas may be provided in the third area 30. The third gas injection unit 300 may be coupled to the upper cover.

[0039] along Figure 1 The view of the chamber taken along line AA can be Figure 3A and 3B .like Figure 3A The second gas injection unit 200 for injecting the reaction gas shown in the figure may be implemented as an electrode structure type configured with a first electrode 210 and a second electrode 220. The second gas injection unit 200 for injecting the reaction gas may be implemented as a showerhead type. In this case, the second gas injection unit 200 may not include the first electrode 210 and the second electrode 220. For example, the second gas injection unit 200 for injecting the reaction gas may be implemented as Figure 3A The first gas injection unit 100 shown in FIG. 1 is implemented as a showerhead type.

[0040] In one embodiment, when a radio frequency (RF) power source 700 is applied to the first electrode 210, the second electrode 220 may be grounded. On the other hand, when the first electrode 210 is grounded, the RF power source may be applied to the second electrode 220. In both cases, when the plasma gas is provided, plasma may be generated between the first electrode 210 and the second electrode 220. In this case, the first electrode 210 and the second electrode 220 having a potential difference may constitute a plasma ejection unit. In addition, one or more protruding electrodes 230 may be formed in the first electrode 210 in a direction toward the substrate support unit 600. Therefore, plasma may be generated in the second region 20.

[0041] The second gas injection unit 200 may be connected to a remote plasma device (not shown) located outside the chamber. Therefore, the second gas injection unit 200 may inject ionized gas or radicals toward the second region 20.

[0042] When the second gas injection unit 200 is implemented as an electrode structure type, the first electrode 210 and the protrusion electrode 230 may be connected to each other to have the same potential. Therefore, plasma may be generated between the first electrode 210 and the second electrode 220 and between the protrusion electrode 230 and the second electrode 220 due to the potential difference. In this case, plasma may be generated between the first electrode 210 and the second electrode 220. Plasma may also be generated between the protrusion electrode 230 and the second electrode 220. Plasma may be generated between the first electrode 210 and the second electrode 220 and between the protrusion electrode 230 and the second electrode 220.

[0043] The gas injection holes (not shown) of the second gas injection unit 200 may be provided as gas lines in the protruding electrode 230 along the length direction. In this case, the reaction gas or the plasma generating gas may be injected through the gas injection holes provided in the protruding electrode 230. The gas injection holes may be provided in the first electrode 210 along the direction toward the processing space. In this case, the reaction gas or the plasma generating gas may be injected through the gas injection holes provided in the first electrode 210.

[0044] The second gas injection unit 200 may include a plasma injection unit (not shown) that injects ionized gas or radicals. The plasma injection unit may be connected to a remote plasma device (not shown) to inject ionized gas or radicals.

[0045] The first gas injection unit 100 and the second gas injection unit 200 may be implemented as different types of injection structures. For example, the first gas injection unit 100 may be implemented as a showerhead type, and the second gas injection unit 200 may be implemented as an electrode structure type. In this case, a process of adsorbing a source gas onto a substrate may be performed in the first region 10, and a process of depositing a thin film on a substrate using an ALD process based on a reaction between the source gas adsorbed on the substrate and the reaction gas may be performed in the second region 20.

[0046] In addition, the first gas injection unit 100 may be coupled to the upper cover so as to be disposed in the upper portion of the first region 10. The first gas injection unit 100 may provide the source gas to the first region 10. The first gas injection unit 100 may be implemented as a showerhead type. In this case, a first gas injection hole 110 may be provided along a downward direction of the processing space 1 to inject the source gas to a portion located below the first gas injection unit 100 (i.e., the first region 10). The first gas injection hole 110 may be provided as a plurality of holes, and may inject the source gas in a direction toward the substrate support unit 600. The first gas injection unit 100 may be implemented as Figure 3B In this case, the first gas injection unit 100 may include a first electrode 120 , a protruding electrode 130 , and a second electrode 140 .

[0047] The first gas injection unit 100 and the second gas injection unit 200 may be implemented as the same type of injection structure. Figure 3B As shown, the first gas injection unit 100 and the second gas injection unit 200 may both be implemented as an electrode structure type. Although not shown, the first gas injection unit 100 and the second gas injection unit 200 may both be implemented as a showerhead type.

[0048] Reference Figures 1 to 4 , the third region 30 can separate and divide the first region 10 and the second region 20. Figure 2 When cutting the central part of the upper cover, you can see Figure 4 Side cross-sectional view of .

[0049] Reference Figure 2 and 4 , the third gas injection unit 300 injects the purification gas toward the third region 30. The third gas injection unit 300 may inject the purification gas toward the third region 30 divided into the first sub-area 302, the second sub-area 304, and the third sub-area 306.

[0050] The first purge gas spraying unit 310 and the first plasma spraying unit 302a may be disposed in the first partition 302. An RF power source 700 for generating plasma may be connected to the first plasma spraying unit 302a. The RF power source may be a high frequency power source.

[0051] The first plasma spraying unit 302a may be disposed inward from the first purge gas spraying unit 310 in the first zone 302. That is, the first purge gas spraying units 310 may be adjacently disposed at both sides of the first plasma spraying unit 302a.

[0052] The first purge gas spraying unit 310 in the first partition 302 may spray the purge gas toward the first partition 302 to purify the source gas of the first region 10 and the reaction gas of the second region 20 to be separated from each other.

[0053] The first plasma injection unit 302a in the first partition 302 may inject plasma gas to the first partition 302 to perform plasma treatment in a process in which the substrate passes through the first partition 302 based on the rotation of the substrate support unit 600. Therefore, the first plasma injection unit 302a in the first partition 302 may remove internal impurities of the thin film on the substrate to improve the quality of the thin film. In addition, when the substrate rotates after the deposition process is completed, the plasma treatment may be performed while purifying the processing gas remaining on the substrate in the third region 30, thereby shortening the processing time to the greatest extent. In the structure seen from the lower surface of the third gas injection unit 300, the first purge gas injection unit 310, the first plasma injection unit 302a, and the first purge gas injection unit 310 may be continuously disposed.

[0054] In the third gas injection unit 300, a second partition 304 may be provided in a space opposite to the first partition 302. A window 304a may be provided in the second partition 304. The window 304a may be a window formed of a transparent material so that the substrate sensing device 800 can sense and measure the temperature, position, and rotation of the substrate externally.

[0055] The substrate sensing device 800 may sense and measure the distance from the substrate to the lower surface 308 of the third gas spraying unit. The substrate sensing device 800 may include a temperature detector and a visual device for measuring the temperature of the substrate.

[0056] A temperature detector for measuring the temperature of the substrate may be provided in the second partition 304. The temperature detector may be installed in the third gas injection unit 300. In addition, a second plasma injection unit may be provided in the second partition 304.

[0057] The window 304a may be provided in the first partition 302. The first plasma spraying unit 302a and the second plasma spraying unit may be additionally installed in the first partition 302 and the second partition 304, respectively. In addition, the window 304a may be installed in each of the first partition 302 and the second partition 304.

[0058] Reference Figure 4 , the third gas injection unit 300 may include a central purge injection unit disposed in the third partition 306. The central purge injection unit may be installed in an upper cover located in a central area of ​​the substrate support unit. A purge gas injection hole for injecting the purge gas may be provided in the central purge injection unit. Therefore, the central purge injection unit may inject the purge gas in a direction toward the substrate support unit 600. In this case, the central purge injection unit may inject the purge gas toward the third partition 306.

[0059] The central purge spray unit may spray the purge gas toward a portion that is a central portion of the processing space of the chamber, whereby the gas in the first region 10 and the gas in the second region 20 may be separated from each other at the center of the chamber.

[0060] Figure 5 The portion corresponding to the portion where the window 304a and the first plasma ejection unit 302a are not provided, along Figure 2 A'-A' line cut side view.

[0061] Reference Figure 5 , the first purge gas injection unit 310 may be connected to one space. Therefore, the processing space may be divided into the first area 10 and the second area 20 by one first purge gas injection unit 310.

[0062] In addition, since the first zone 302 , the second zone 304 , and the third zone 306 are divided and separated from each other, the third gas spraying unit 300 may separate the processing space into the first area 10 and the second area 20 .

[0063] A temperature detector 810 for measuring the temperature of the substrate may be provided in a region other than the region where the plasma gas is sprayed in the third region 30. The temperature detector 810 may include a substrate sensing device 800 and a window 304a.

[0064] The first plasma spraying unit 302 a may be connected to a remote plasma device (not shown) so as to spray ionized gas or radicals.

[0065] The source gas sprayed from the first gas spray unit 100 to the first region 10 may include titanium group elements (Ti, Zr, Hf, etc.), silicon (Si), or aluminum (Al). For example, the source gas SG including titanium (Ti) may be titanium tetrachloride (TiCl4) gas, etc. In addition, the source gas SG containing silicon (Si) may be silane (SiH4) gas, disilane (Si2H6) gas, trisilane (Si3H8) gas, tetraethyl orthosilicate (TEOS) gas, dichlorosilane (DCS) gas, hexachlorosilane (HCD) gas, tri-dimethylaminosilane (TriDMAS) gas, triamine (TSA) gas, etc.

[0066] The reaction gas provided from the second gas injection unit 200 to the second region 20 may include hydrogen (H2), nitrogen (N2), oxygen (O2), nitrous oxide (N2O) gas, ammonia (NH3), water vapor (H2O) or ozone (O3) gas. In this case, the reaction gas may be mixed with a purge gas including nitrogen (N2), argon (Ar), xenon (Ze) or helium (He).

[0067] In addition, the gas used to generate plasma may include hydrogen (H2), nitrogen (N2), a mixed gas of hydrogen (H2) and nitrogen (N2), oxygen (O2), nitrous oxide (N2O) gas, argon (Ar), helium (He) or ammonia (NH3).

[0068] The purge gas injected by the third gas injection unit 300 and provided to the third region 30 may include nitrogen (N2), argon (Ar), xenon (Ze), or helium (He). These gases may be inert gases.

[0069] Reference Figures 6 to 9 In the substrate processing apparatus according to the present invention, the third gas injection unit 300 may include a first purge gas injection unit 310 , a second purge gas injection unit 320 , and a central purge injection unit 330 .

[0070] The first purge gas injection unit 310 may inject purge gas to the first subarea 302 of the third region 30. The first plasma injection unit 302a may be installed in the first purge gas injection unit 310. The first plasma injection unit 302a may inject plasma gas to the first subarea 302. Therefore, as the source gas is adsorbed on the substrate in the first region 10 and then the substrate support unit 600 rotates, the substrate may pass through the first subarea 302 and may move from the first region 10 to the second region 20, and in this process, the first plasma injection unit 302a may perform a first plasma treatment on the substrate passing through the first subarea 302. That is, the first plasma injection unit 302a may perform pre-treatment using plasma. Therefore, the first plasma injection unit 302a may remove internal impurities of the source gas adsorbed on the substrate, thereby contributing to improving the quality of the thin film deposited on the substrate.

[0071] The first plasma injection unit 302a may be disposed in the first purge gas injection unit 310. Therefore, when the substrate moves from the first area 10 to the second area 20, the purge gas, the plasma gas, and the purge gas may be injected to the substrate passing through the first partition 302. In this case, the injection of the purge gas may be performed by the first purge gas injection unit 310, and the injection of the plasma gas may be performed by the first plasma injection unit 302a. The first plasma injection unit 302a may be implemented as a showerhead type or an electrode structure type.

[0072] The second purge gas injection unit 320 may inject purge gas to the second partition 304 of the third region 30. The second plasma injection unit 304b may be installed in the second purge gas injection unit 320. The second plasma injection unit 304b may inject plasma gas to the second partition 304. Therefore, as the thin film is deposited by the ALD process based on the reaction between the source gas adsorbed on the substrate and the reaction gas in the second region 20, and then the substrate support unit 600 rotates, the substrate may pass through the second partition 304 and may move from the second region 20 to the first region 10, and in this process, the second plasma injection unit 304b may perform a second plasma treatment on the substrate passing through the second partition 304. That is, the second plasma injection unit 304b may perform pretreatment using plasma. Therefore, the second plasma injection unit 304b may remove internal impurities of the thin film deposited on the substrate, thereby densely depositing the thin film on the substrate. Therefore, the second plasma injection unit 304b may further improve the quality of the thin film deposited on the substrate.

[0073] The second plasma injection unit 304b may be disposed in the second purge gas injection unit 320. Therefore, when the substrate moves from the second area 20 to the first area 10, the purge gas, the plasma gas, and the purge gas may be injected to the substrate passing through the second partition 304. In this case, the injection of the purge gas may be performed by the second purge gas injection unit 320, and the injection of the plasma gas may be performed by the second plasma injection unit 304b. The second plasma injection unit 304b may be implemented as a showerhead type or an electrode structure type.

[0074] The central purge injection unit 330 may inject the purge gas toward the third subarea 306 of the third region 30. Therefore, the central purge injection unit 330 may prevent the source gas injected into the first region 10 from being mixed with the reaction gas injected into the second region 20 in the third subarea 306. In addition, the first purge gas injection unit 310 may prevent the source gas injected into the first region 10 from being mixed with the reaction gas injected into the second region 20 in the first subarea 302. The second purge gas injection unit 320 may prevent the source gas injected into the first region 10 from being mixed with the reaction gas injected into the second region 20 in the second subarea 304.

[0075] Here, the substrate processing apparatus according to the present invention can perform a processing process on the substrate while moving the substrate to the first area 10 again via the first area 10, the first subarea 302, the second area 20, and the second subarea 304 based on the rotation of the substrate supporting unit 600. In this case, the substrate supporting unit 600 can be rotated by a rotating unit (not shown). The process of rotating the substrate supporting unit 600 by the rotating unit will be described below.

[0076] First, when the substrate is located in the first area 10, the rotating unit may stop the substrate supporting unit 600. Therefore, in a state where the substrate is stopped, an adsorption process of adsorbing the source gas on the substrate may be performed in the first area 10. In this case, the first gas spraying unit 100 may spray the source gas toward the first area 10.

[0077] Then, when the adsorption process is finished, the rotating unit may rotate the substrate supporting unit 600 so that the substrate moves from the first area 10 to the second area 20 via the first partition 302. In this case, when the substrate passes through the first partition 302, the rotating unit may continuously rotate the substrate supporting unit 600 without stopping the substrate supporting unit 600. When the substrate passes through the first partition 302, the first plasma process may be performed on the substrate using the plasma gas sprayed by the first plasma spraying unit 302a.

[0078] Subsequently, when the substrate is located in the second area 20, the rotating unit may stop the substrate supporting unit 600. Therefore, in a state where the substrate is stopped, a process of depositing a thin film based on a reaction between a source gas adsorbed on the substrate and a reaction gas ejected by the second gas ejection unit 200 may be performed in the second area 20. The second gas ejection unit 200 may excite the reaction gas using plasma and may eject the excited reaction gas to the second area 20. In this case, the substrate processing apparatus according to the present invention may be implemented to be applicable to a low temperature process. For example, the substrate processing apparatus according to the present invention may be implemented to be applicable to a semiconductor low temperature nitridation process. In this case, when the substrate passes through the first partition 302, the first plasma ejection unit 302a may not eject plasma gas. The second gas ejection unit 200 may eject reaction gas to the second area 20 in a state where the reaction gas is not excited. In this case, the substrate processing apparatus according to the present invention may be implemented to be applicable to a semiconductor high temperature nitridation process. In this case, when the substrate passes through the first partition 302, the first plasma ejection unit 302a may eject plasma gas.

[0079] Subsequently, when the deposition process is finished, the rotating unit may rotate the substrate supporting unit 600 so that the substrate moves from the second area 20 to the first area 10 via the second partition 304. In this case, when the substrate passes through the second partition 304, the rotating unit may continuously rotate the substrate supporting unit 600 without stopping the substrate supporting unit 600. When the substrate passes through the second partition 304, the second plasma treatment may be performed on the substrate using the plasma gas sprayed by the second plasma spraying unit 304b. In the case where the substrate processing apparatus according to the present invention is implemented to be applicable to a low temperature process, when the substrate passes through the second partition 304, the second plasma spraying unit 304b may not spray the plasma gas.

[0080] As described above, when the substrate is located in the first area 10 and when the substrate is located in the second area 20, the rotating unit may stop the substrate supporting unit 600. In this case, when the substrate passes through the first partition 302 and when the substrate passes through the second partition 304, the rotating unit may continuously rotate the substrate supporting unit 600 without stopping the substrate supporting unit 600. In addition, the rotating unit may stop the substrate supporting unit 600 only when the substrate is located in the first area 10, and when the substrate passes through the first partition 302, the second area 20, and the second partition 304, the rotating unit may continuously rotate the substrate supporting unit 600 without stopping the substrate supporting unit 600.

[0081] The third gas injection unit 300 may be implemented to inject plasma gas to the first partition 302 of the third area 30 to perform purification on the first partition 302. That is, the plasma gas injected to the first partition 302 may be used as a purification gas. The substrate support unit 600 may rotate so that the substrate passes through the first partition 302 and moves from the first area 10 to the second area 20. Therefore, the plasma gas injected to the first partition 302 may perform purification on the first partition 302, and further, pre-treatment may be performed on the substrate passing through the first partition 302. In this case, only the first plasma injection unit 302a may be provided in the first partition 302 without the first purification gas injection unit 310.

[0082] The third gas injection unit 300 may be implemented to inject plasma gas to the second partition 304 of the third area 30 to perform purification on the second partition 304. That is, the plasma gas injected to the second partition 304 may be used as a purification gas. The substrate support unit 600 may rotate so that the substrate passes through the second partition 304 and moves from the second area 20 to the first area 10. Therefore, the plasma gas injected to the second partition 304 may perform purification on the second partition 304, and further, post-processing may be performed on the substrate passing through the second partition 304. In this case, only the second plasma injection unit 304b may be provided in the second partition 304 without the second purification gas injection unit 320.

[0083] Reference Figures 6 to 14B The substrate processing apparatus according to the present invention may include various embodiments based on the area to which the plasma gas is sprayed. Figure 8 In each embodiment, the region to which the plasma gas is injected is shown as O, and the region to which the plasma gas is not injected is shown as X. Figures 9 to 14BAs shown, when the first substrate S1 and the second substrate S2 are arranged at positions symmetrical with respect to the rotation axis of the substrate support unit 600, the substrate processing apparatus according to the present invention may perform a treatment process on the first substrate S1 and the second substrate S2 while changing the positions of the first substrate S1 and the second substrate S2 based on the rotation of the substrate support unit 600. For example, when the first substrate S1 is located in the first area 10, the second substrate S2 may be located in the second area 20. When the second substrate S2 is located in the first area 10, the first substrate S1 may be located in the second area 20. When the first substrate S1 is located in the first partition 302, the second substrate S2 may be located in the second partition 304. When the second substrate S2 is located in the first partition 302, the first substrate S1 may be located in the second partition 304. In this case, it may be realized that when the treatment process is performed in the first area 10 and the second area 20, a plurality of first substrates S1 and a plurality of second substrates S2 are located in each of the first area 10 and the second area 20. For example, it may be implemented as follows: two first substrates S1 and two second substrates S2 are located in each of the first region 10 and the second region 20 .

[0084] Hereinafter, embodiments of a substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

[0085] <First Embodiment>

[0086] like Figure 8 and 9 As shown, in the first embodiment, the substrate may be treated without using plasma in all of the first region 10, the first sub-region 302, the second region 20, and the second sub-region 304. In the first embodiment, the high temperature process may be implemented by performing heat treatment in the second region 20. In this case, the heat treatment and the injection of the reaction gas may be performed alternately in the second region 20. Therefore, in the first embodiment, the step coverage of the high dielectric material or the like may be improved. In addition, the first embodiment may be implemented by alternately performing the heat treatment and the ALD process, thereby further increasing the thickness of the thin film compared to the case where the thin film is deposited only by the ALD process.

[0087] <Second Embodiment>

[0088] like Figure 8 and 10 As shown, in the second embodiment, the treatment process may be performed on the substrate using plasma only in the second region 20 without using plasma in the first region 10, the first sub-region 302, and the second sub-region 304. In this case, the treatment process using the excited reaction gas may be performed on the substrate in the second region 20. The second embodiment may be implemented to be applicable to a low temperature process. For example, the second embodiment may be implemented to be applicable to a semiconductor low temperature nitridation process.

[0089] <Third Embodiment>

[0090] like Figure 8 , 9 11A and 11B, in the third embodiment, the substrate may be treated using plasma only in the first partition 302 without using plasma in the first region 10, the second region 20 and the second partition 304. The operation of the third embodiment is described below with respect to the first substrate S1.

[0091] First, if Fig. 9 As shown, in a state where the first substrate S1 is located in the first region 10, an adsorption process using a source gas may be performed on the first substrate S1 in the first region 10. While the adsorption process is performed, the substrate supporting unit 600 may maintain a stopped state. In addition, while the adsorption process is performed, plasma may not be generated in the first partition 302.

[0092] Subsequently, when the adsorption process is finished, as the substrate supporting unit 600 rotates, the first substrate S1 may pass through the first partition 302 and may move from the first area 10 to the second area 20. In this case, as shown in FIG. Fig.11A As shown, when the first substrate S1 passes through the first partition 302, the first plasma treatment using plasma may be performed on the first substrate S1 in the first partition 302. That is, pre-treatment using plasma may be performed in the first partition 302. Therefore, in the third embodiment, by using plasma in the first partition 302, internal impurities of the source gas adsorbed on the substrate may be removed, thereby improving the quality of the thin film deposited on the substrate. After the first substrate S1 passes through the first partition 302, plasma may not be generated in the first partition 302.

[0093] Then, if Fig. 11B As shown, when the first substrate S1 is located in the second area 20, a deposition process using a reaction gas may be performed on the first substrate S1 in the second area 20. While the deposition process is performed, the substrate support unit 600 may remain in a stopped state. In addition, while the deposition process is performed, plasma may not be generated in the first partition 302.

[0094] Subsequently, when the deposition process is finished, as the substrate supporting unit 600 rotates, the first substrate S1 may pass through the second partition 304 and may move from the second area 20 to the first area 10. When the first substrate S1 passes through the second partition 304, plasma may be generated in the first partition 302. In addition, after the first substrate S1 passes through the second partition 304, plasma may not be generated in the first partition 302. As described above, the third embodiment may be implemented such that plasma is generated in the first partition 302 only when the substrate supporting unit 600 rotates, and plasma is not generated in the first partition 302 when the substrate supporting unit 600 stops. The third embodiment may be implemented such that the purge gas is continuously sprayed to the third area 30 when the substrate supporting unit 600 rotates and when the substrate supporting unit 600 stops.

[0095] <Fourth Embodiment>

[0096] like Fig. 9 , 11A As shown in FIG. 12 , in the fourth embodiment, the substrate may be treated using plasma in each of the first subarea 302 and the second area 20 instead of using plasma in the first area 10 and the second subarea 304. The operation of the fourth embodiment will be described below with respect to the first substrate S1.

[0097] First, if Fig. 9 As shown, in a state where the first substrate S1 is located in the first region 10, an adsorption process using a source gas may be performed on the first substrate S1 in the first region 10. While the adsorption process is performed, the substrate supporting unit 600 may maintain a stopped state. In addition, while the adsorption process is performed, plasma may not be generated in the first partition 302.

[0098] Subsequently, when the adsorption process is finished, as the substrate supporting unit 600 rotates, the first substrate S1 may pass through the first partition 302 and may move from the first area 10 to the second area 20. In this case, Fig.11A As shown, when the first substrate S1 passes through the first partition 302, a first plasma treatment using plasma may be performed on the first substrate S1 in the first partition 302. That is, a pre-treatment using plasma may be performed in the first partition 302. Therefore, in the fourth embodiment, the internal impurities of the source gas adsorbed on the substrate may be removed using the plasma in the first partition 302, thereby improving the quality of the thin film deposited on the substrate. While the plasma is generated in the first partition 302, the plasma may not be generated in the second region 20. In addition, after the first substrate S1 passes through the first partition 302, the plasma may not be generated in the first partition 302.

[0099] Then, if Fig.12As shown, when the first substrate S1 is located in the second area 20, a deposition process using excited reaction gas may be performed on the first substrate S1 in the second area 20. While the adsorption process is performed, the substrate support unit 600 may remain in a stopped state. As described above, the fourth embodiment may be implemented by exposing the substrate to which the source gas is adsorbed and pre-processed in the first area 10 and the first subarea 302 to plasma in the second area 20 again, thereby reducing the deposition thickness of the upper surface and enhancing the gap filling effect. In addition, while the deposition process is performed, plasma may not be generated in the first subarea 302.

[0100] Subsequently, when the deposition process is finished, as the substrate supporting unit 600 rotates, the first substrate S1 may pass through the second partition 304 and may move from the second area 20 to the first area 10. In this case, when the first substrate S1 passes through the second partition 304, plasma may be generated in the first partition 302. In addition, when the first substrate S1 passes through the second partition 304, plasma may not be generated in the second area 20. As described above, the fourth embodiment may be implemented such that plasma is generated in the first partition 302 only when the substrate supporting unit 600 rotates, and plasma is not generated in the first partition 302 when the substrate supporting unit 600 stops. In addition, the fourth embodiment may be implemented such that plasma is generated in the second area 20 only when the substrate supporting unit 600 stops, and plasma is not generated in the second area 20 when the substrate supporting unit 600 rotates. The fourth embodiment may be implemented such that the purge gas is continuously sprayed to the third area 30 when the substrate supporting unit 600 rotates and when the substrate supporting unit 600 stops.

[0101] <Fifth Embodiment>

[0102] like Fig.12 and 13A 13C, in the fifth embodiment, the substrate may be treated using plasma in each of the first subarea 302, the second area 20 and the second subarea 304 but not in the first area 10. The operation of the fifth embodiment will be described below with respect to the first substrate S1.

[0103] First, if Fig.13A As shown, in a state where the first substrate S1 is located in the first area 10, an adsorption process using a source gas may be performed on the first substrate S1 in the first area 10. While the adsorption process is performed, the substrate supporting unit 600 may maintain a stopped state. While the adsorption process is performed, plasma may be generated in the second area 20. In addition, while the adsorption process is performed, plasma may not be generated in the second subarea 304.

[0104] Subsequently, when the adsorption process is finished, as the substrate supporting unit 600 rotates, the first substrate S1 may pass through the first partition 302 and may move from the first area 10 to the second area 20. In this case, as shown in FIG. Fig. 13B As shown, when the first substrate S1 passes through the first partition 302, the first plasma treatment using plasma may be performed on the first substrate S1 in the first partition 302. That is, pretreatment may be performed using plasma in the first partition 302. Therefore, in the fifth embodiment, by using the plasma in the first partition 302, internal impurities of the source gas adsorbed on the substrate may be removed, thereby improving the quality of the thin film deposited on the substrate. While the plasma is generated in the first partition 302, the plasma may not be generated in the second region 20. In addition, after the first substrate S1 passes through the first partition 302, the plasma may not be generated in the first partition 302. The fifth embodiment may be implemented such that plasma is generated in the second partition 304 while the substrate supporting unit 600 rotates to allow the first substrate S1 to pass through the first partition 302. After the first substrate S1 passes through the first partition 302, the plasma may not be generated in the second partition 304.

[0105] Then, if Fig.12 As shown, when the first substrate S1 is located in the second area 20, a deposition process using an excited reaction gas may be performed on the first substrate S1 in the second area 20. While the deposition process is performed, the substrate support unit 600 may remain in a stopped state. As described above, the fifth embodiment may be implemented by exposing the substrate to which the source gas is adsorbed and pre-processed in the first area 10 and the first subarea 302 to the plasma in the second area 20 again, thereby reducing the deposition thickness of the upper surface, thereby enhancing the gap filling effect. In addition, while the deposition process is performed, plasma may not be generated in the first subarea 302 and the second subarea 304.

[0106] Subsequently, when the deposition process is finished, as the substrate supporting unit 600 rotates, the first substrate S1 may pass through the second partition 304 and may move from the second area 20 to the first area 10. In this case, as shown in FIG. Fig. 13CAs shown, when the first substrate S1 passes through the second partition 304, the second plasma treatment using plasma may be performed on the first substrate S1 in the second partition 304. That is, post-treatment may be performed using plasma in the second partition 304. Therefore, in the fifth embodiment, by removing internal impurities of the thin film deposited on the substrate in the second partition 304, the compactness of the thin film deposited on the substrate may be increased, thereby further improving the quality of the thin film deposited on the substrate. As described above, the fifth embodiment may be implemented such that the generation of the deposited film is reduced by cutting off the ligand of the source gas on the substrate adsorbing the active gas through pre-treatment, and the thin film deposited through the ALD process is further compacted through post-treatment.

[0107] While plasma is generated in the second partition 304, plasma may not be generated in the second area 20. In addition, as the first substrate S1 passes through the second partition 304, plasma may not be generated in the second partition 304. In addition, the fifth embodiment may be implemented such that plasma is generated in the first partition 302 while the substrate supporting unit 600 rotates to allow the first substrate S1 to pass through the second partition 304. After the first substrate S1 passes through the second partition 304, plasma may not be generated in the first partition 302. As described above, the fifth embodiment may be implemented such that plasma is generated in the first partition 302 and the second partition 304 only when the substrate supporting unit 600 rotates, and plasma is not generated in the first partition 302 and the second partition 304 when the substrate supporting unit 600 stops. In addition, the fifth embodiment may be implemented such that plasma is generated in the second area 20 only when the substrate supporting unit 600 stops, and plasma is not generated in the second area 20 when the substrate supporting unit 600 rotates. The fifth embodiment may be implemented by continuously spraying the purge gas toward the third region 30 when the substrate supporting unit 600 rotates and when the substrate supporting unit 600 stops.

[0108] <Sixth Embodiment>

[0109] like Fig.12 , 13A 14A and 14B, in the sixth embodiment, the substrate may be treated using plasma in each of the second region 20 and the second partition 304 but not in the first region 10 and the first partition 302. The operation of the sixth embodiment will be described below with respect to the first substrate S1.

[0110] First, if Fig.13AAs shown, in a state where the first substrate S1 is located in the first area 10, an adsorption process using a source gas may be performed on the first substrate S1 in the first area 10. While the adsorption process is performed, the substrate supporting unit 600 may maintain a stopped state. While the adsorption process is performed, plasma may be generated in the second area 20. In addition, while the adsorption process is performed, plasma may not be generated in the second subarea 304.

[0111] Subsequently, when the adsorption process is finished, as the substrate supporting unit 600 rotates, the first substrate S1 may pass through the first partition 302 and may move from the first area 10 to the second area 20. In this case, as shown in FIG. Fig.14A As shown, when the first substrate S1 passes through the first partition 302, plasma may not be generated in the first partition 302. The sixth embodiment may be implemented such that while the substrate supporting unit 600 rotates to allow the first substrate S1 to pass through the first partition 302, plasma is generated in the second partition 304 and plasma is not generated in the second region 20. After the first substrate S1 passes through the first partition 302, plasma may not be generated in the second partition 304.

[0112] Then, if Fig.12 As shown, when the first substrate S1 is located in the second area 20, a deposition process using excited reaction gas may be performed on the first substrate S1 in the second area 20. While the deposition process is performed, the substrate support unit 600 may remain in a stopped state. In addition, while the deposition process is performed, plasma may not be generated in the second partition 304.

[0113] Subsequently, when the deposition process is finished, as the substrate supporting unit 600 rotates, the first substrate S1 may pass through the second partition 304 and may move from the second area 20 to the first area 10. In this case, as shown in FIG. Fig. 14B As shown, when the first substrate S1 passes through the second partition 304, the second plasma treatment using plasma may be performed on the first substrate S1 in the second partition 304. That is, post-treatment using plasma may be performed in the second partition 304. Therefore, in the sixth embodiment, by removing internal impurities of the thin film deposited on the substrate in the second partition 304, the compactness of the thin film deposited on the substrate may be increased, thereby further improving the quality of the thin film deposited on the substrate. In addition, the sixth embodiment may be implemented such that while the substrate is rotated based on the rotation of the substrate support unit 600, a thin film is deposited on the substrate using a reaction gas excited by the plasma in the second region 20, and then post-treatment using plasma is performed. Therefore, in the sixth embodiment, the processing time may be shortened, thereby further improving the quality of the thin film.

[0114] While plasma is generated in the second partition 304, plasma may not be generated in the second region 20. In addition, as the first substrate S1 passes through the second partition 304, plasma may not be generated in the second partition 304. As described above, the sixth embodiment may be implemented by generating plasma in the second partition 304 only when the substrate supporting unit 600 rotates, and not generating plasma in the second partition 304 when the substrate supporting unit 600 stops. In addition, the sixth embodiment may be implemented by generating plasma in the second region 20 only when the substrate supporting unit 600 stops, and not generating plasma in the second region 20 when the substrate supporting unit 600 rotates. The sixth embodiment may be implemented by continuously spraying the purge gas to the third region 30 when the substrate supporting unit 600 rotates and when the substrate supporting unit 600 stops.

[0115] <Seventh Embodiment>

[0116] like Figure 8 , 9 11B, 14A and 14B, in the seventh embodiment, the substrate may be treated using plasma only in the second partition 304 and not in the first region 10, the first partition 302 and the second region 20. The operation of the seventh embodiment will be described below with respect to the first substrate S1.

[0117] First, if Fig. 9 As shown, in a state where the first substrate S1 is located in the first area 10, an adsorption process using a source gas may be performed on the first substrate S1 in the first area 10. While the adsorption process is performed, the substrate supporting unit 600 may maintain a stopped state. In addition, while the adsorption process is performed, plasma may not be generated in the second partition 304.

[0118] Subsequently, when the adsorption process is finished, as the substrate supporting unit 600 rotates, the first substrate S1 may pass through the first partition 302 and may move from the first area 10 to the second area 20. In this case, as shown in FIG. Fig.14A As shown, when the first substrate S1 passes through the first partition 302, plasma may not be generated in the first partition 302. The seventh embodiment may be implemented such that while the substrate supporting unit 600 rotates to allow the first substrate S1 to pass through the first partition 302, plasma is not generated in the second partition 304. After the first substrate S1 passes through the first partition 302, plasma may not be generated in the second partition 304.

[0119] Then, if Fig. 11BAs shown, when the first substrate S1 is located in the second area 20, a deposition process using a reaction gas may be performed on the first substrate S1 in the second area 20. While the deposition process is performed, the substrate support unit 600 may remain in a stopped state. In addition, while the deposition process is performed, plasma may not be generated in the second partition 304.

[0120] Subsequently, when the deposition process is finished, as the substrate supporting unit 600 rotates, the first substrate S1 may pass through the second partition 304 and may move from the second area 20 to the first area 10. In this case, as shown in FIG. Fig. 14B As shown, when the first substrate S1 passes through the second partition 304, a second plasma treatment using plasma may be performed on the first substrate S1 in the second partition 304. That is, a post-treatment using plasma may be performed in the second partition 304. Therefore, in the seventh embodiment, by removing internal impurities of the thin film deposited on the substrate in the second partition 304, the compactness of the thin film deposited on the substrate may be increased, thereby further improving the quality of the thin film deposited on the substrate. After the first substrate S1 passes through the second partition 304, plasma may not be generated in the second partition 304. As described above, the seventh embodiment may be implemented such that plasma is generated in the second partition 304 only when the substrate support unit 600 rotates, and plasma is not generated in the second partition 304 when the substrate support unit 600 stops. The seventh embodiment may be implemented such that the purge gas is continuously sprayed to the third region 30 when the substrate support unit 600 rotates and when the substrate support unit 600 stops.

[0121] <Eighth Implementation Method>

[0122] like Figure 8 , 9 11B, 13B and 13C, in the eighth embodiment, the substrate may be treated using plasma in each of the first and second partitions 302 and 304 but not in the first and second regions 10 and 20. The operation of the eighth embodiment will be described below with respect to the first substrate S1.

[0123] First, if Fig. 9 As shown, in a state where the first substrate S1 is located in the first area 10, an adsorption process using a source gas may be performed on the first substrate S1 in the first area 10. While the adsorption process is performed, the substrate supporting unit 600 may be kept in a stopped state. In addition, while the adsorption process is performed, plasma may not be generated in the first subarea 302 and the second subarea 304.

[0124] Subsequently, when the adsorption process is finished, as the substrate supporting unit 600 rotates, the first substrate S1 may pass through the first partition 302 and may move from the first area 10 to the second area 20. In this case, as shown in FIG. Fig. 13B As shown, when the first substrate S1 passes through the first partition 302, a first plasma treatment using plasma may be performed on the first substrate S1 in the first partition 302. That is, a pre-treatment may be performed using plasma in the first partition 302. Therefore, in the eighth embodiment, internal impurities of the source gas adsorbed on the substrate may be removed using plasma in the first partition 302, thereby improving the quality of the thin film deposited on the substrate. After the first substrate S1 passes through the first partition 302, plasma may not be generated in the first partition 302. The eighth embodiment may be implemented such that plasma is generated in the second partition 304 while the substrate supporting unit 600 rotates to allow the first substrate S1 to pass through the first partition 302. After the first substrate S1 passes through the first partition 302, plasma may not be generated in the second partition 304.

[0125] Then, if Fig. 11B As shown, when the first substrate S1 is located in the second area 20, a deposition process using a reaction gas may be performed on the first substrate S1 in the second area 20. While the deposition process is performed, the substrate support unit 600 may remain in a stopped state. In addition, while the deposition process is performed, plasma may not be generated in the first subarea 302 and the second subarea 304.

[0126] Subsequently, when the deposition process is finished, as the substrate supporting unit 600 rotates, the first substrate S1 may pass through the second partition 304 and may move from the second area 20 to the first area 10. In this case, as shown in FIG. Fig. 13C As shown, when the first substrate S1 passes through the second partition 304, a second plasma treatment using plasma may be performed on the first substrate S1 in the second partition 304. That is, a post-treatment using plasma may be performed in the second partition 304. Therefore, in the eighth embodiment, by removing internal impurities of the thin film deposited on the substrate in the second partition 304, the compactness of the thin film deposited on the substrate may be increased, thereby further improving the quality of the thin film deposited on the substrate. As described above, the eighth embodiment may be implemented such that the generation of the deposited film is reduced by cutting off the ligand of the source gas on the substrate adsorbing the active gas through pre-treatment, and the thin film deposited through the ALD process is further compacted through post-treatment.

[0127] After the first substrate S1 passes through the second partition 304, plasma may not be generated in the second partition 304. In addition, the eighth embodiment may be implemented such that plasma is generated in the first partition 302 while the substrate supporting unit 600 rotates to allow the first substrate S1 to pass through the second partition 304. After the first substrate S1 passes through the second partition 304, plasma may not be generated in the first partition 302. As described above, the eighth embodiment may be implemented such that plasma is generated in the first partition 302 and the second partition 304 only when the substrate supporting unit 600 rotates, and plasma is not generated in the first partition 302 and the second partition 304 when the substrate supporting unit 600 stops. In addition, the eighth embodiment may be implemented such that the purge gas is continuously sprayed to the third region 30 when the substrate supporting unit 600 rotates and when the substrate supporting unit 600 stops.

[0128] As described above, an embodiment of the substrate processing apparatus according to the present invention may be implemented such that, in the case where a treatment process using plasma is performed in at least one of the first partition 302 and the second partition 304, plasma is generated in at least one of the first partition 302 and the second partition 304 only when the substrate supporting unit 600 rotates, and plasma is not generated in both the first partition 302 and the second partition 304 when the substrate supporting unit 600 stops. Therefore, the substrate processing apparatus according to the present invention is implemented such that plasma generated in at least one of the first partition 302 and the second partition 304 is prevented from affecting the adsorption process and the deposition process, thereby further improving the quality of the substrate subjected to the adsorption process and the deposition process.

[0129] Hereinafter, embodiments of a substrate processing method according to the present invention will be described in detail with reference to the accompanying drawings.

[0130] Reference Figures 1 to 15 The substrate processing method according to the present invention can be performed by the substrate processing apparatus according to the present invention as described above. The substrate processing method according to the present invention may include the following steps.

[0131] First, in step S11, an adsorption process may be performed by spraying a source gas toward the first region 10. When the first substrate S1 is disposed in the first region 10, step S11 may be performed by the first gas spraying unit 100 spraying a source gas toward the first region 10. Thus, the adsorption process may be performed on the first substrate S1 disposed in the first region 10. While the adsorption process is performed, the substrate supporting unit 600 may be maintained in a stopped state.

[0132] Subsequently, in step S12, when the adsorption process is finished, the substrate supporting unit 600 may be rotated so that the first substrate S1 is disposed in the second area 20. This step S12 may be performed by moving the first substrate S1 from the first area 10 to the second area 20 based on the rotation of the substrate supporting unit 600. In this case, the first substrate S1 may pass through the first partition 302 of the third area 30, and may be moved from the first area 10 to the second area 20 to be disposed in the second area 20.

[0133] Subsequently, in step S13, when the first substrate S1 is disposed in the second area 20, a deposition process may be performed by spraying a reaction gas toward the second area 20. This step S13 may be performed by the second gas spraying unit 200 spraying the reaction gas toward the second area 20. Therefore, the deposition process may be performed on the first substrate S1 disposed in the second area 20. While the deposition process is performed, the substrate supporting unit 600 may be maintained in a stopped state.

[0134] Subsequently, in step S14, when the deposition process is finished, the substrate supporting unit 600 rotates so that the first substrate S1 is disposed in the first area 10. This step S14 may be performed by moving the first substrate S1 from the second area 20 to the first area 10 based on the rotation of the substrate supporting unit 600. In this case, the first substrate S1 may pass through the second partition 304 of the third area 30, and may be moved from the second area 20 to the first area 10 to be disposed in the first area 10.

[0135] By repeatedly performing the above steps, the substrate processing method according to the present invention can deposit a thin film on the first substrate S1 using the ALD process. While performing the above steps, the substrate processing method according to the present invention may include the step of continuously spraying a purge gas to the third region 30. In addition, the substrate processing method according to the present invention may be implemented as follows: in the case where the thin film is deposited on the first substrate S1, the thin film is also deposited on the second substrate S2 located at a symmetrical position relative to the rotation axis of the substrate support unit 600. That is, the substrate processing method according to the present invention may perform the above steps on the first substrate S1 and the second substrate S2. In this case, a plurality of first substrates S1 and a plurality of second substrates S are provided in each of the first region 10 and the second region 20.

[0136] Here, in the step S13 of performing the deposition process, the deposition process may be performed by spraying a reaction gas excited by plasma to the second region 20. Therefore, the substrate processing method according to the present invention may be implemented to be applicable to a low temperature process. For example, the substrate processing method according to the present invention may be implemented to be applicable to a semiconductor low temperature nitridation process. Plasma corresponding to the second region 20 may be generated only when the substrate support unit 600 stops. When the substrate support unit 600 rotates, plasma may not be generated in the second region 20.

[0137] Here, the step S12 of rotating the substrate supporting unit so that the first substrate is disposed in the second area may be performed by generating plasma in the first partition 302 while the first substrate S1 passes through the first partition 302 of the third area 30 when the substrate supporting unit 600 is rotated so that the first substrate S1 passes through the first partition 302. Therefore, the substrate processing method according to the present invention may be implemented as: performing a first plasma processing using plasma on the first substrate S1 in the first partition 302. That is, pre-processing may be performed using plasma in the first partition 302. Therefore, in the substrate processing method according to the present invention, the plasma in the first partition 302 may be used to remove internal impurities of the source gas adsorbed on the substrate, thereby improving the quality of the thin film deposited on the substrate. The generation of plasma in the first partition 302 may be performed by the first plasma injection unit 302a that injects plasma gas into the first partition 302. Plasma may be generated in the first partition 302 only when the substrate supporting unit 600 is rotated. Plasma may not be generated in the first partition 302 when the substrate supporting unit 600 is stopped.

[0138] Here, the step S14 of rotating the substrate supporting unit so that the first substrate is disposed in the first area may be performed by generating plasma in the second partition 304 while the first substrate S1 passes through the second partition 304 of the third area 30 when the substrate supporting unit 600 is rotated so that the first substrate S1 passes through the second partition 304. Therefore, the substrate processing method according to the present invention may be implemented as follows: performing a second plasma processing using plasma on the first substrate S1 in the second partition 304. That is, pre-processing may be performed by using plasma in the second partition 304. Therefore, in the substrate processing method according to the present invention, the compactness of the thin film deposited on the substrate may be increased by removing internal impurities of the thin film deposited on the substrate in the second partition 304, thereby further improving the quality of the thin film deposited on the substrate. The generation of plasma in the second partition 304 may be performed by the second plasma injection unit 304b that injects plasma gas into the second partition 304. Plasma may be generated in the second partition 304 only when the substrate supporting unit 600 is rotated. Plasma may not be generated in the second partition 304 when the substrate supporting unit 600 is stopped.

[0139] Here, the step S13 of rotating the substrate support unit so that the first substrate is disposed in the second region and the step S14 of rotating the substrate support unit so that the first substrate is disposed in the first region may be performed by generating plasma in the first sub-region 302 and the second sub-region 304 of the third region 30. Therefore, the substrate processing method according to the present invention may be implemented as follows: pre-processing is performed using plasma in the first sub-region 302 and post-processing is performed using plasma in the second sub-region 304. Therefore, the substrate processing method according to the present invention may be implemented as follows: by cutting off the ligand of the source gas on the substrate adsorbing the active gas through the pre-processing, the generation of the deposited film is reduced, and the thin film deposited through the ALD process is further densified through the post-processing. In this case, the plasma corresponding to the first sub-region 302 and the plasma corresponding to the second sub-region 304 may be generated only when the substrate support unit 600 is rotated. When the substrate support unit 600 is stopped, plasma may not be generated in either the first sub-region 302 or the second sub-region 304.

[0140] As described above, the substrate processing method according to the present invention may be implemented such that, in the case where a treatment process using plasma is performed in at least one of the first partition 302 and the second partition 304, plasma is generated in at least one of the first partition 302 and the second partition 304 only when the substrate supporting unit 600 rotates; and plasma is not generated in either the first partition 302 or the second partition 304 when the substrate supporting unit 600 stops. Therefore, the substrate processing method according to the present invention is implemented such that the plasma generated in at least one of the first partition 302 and the second partition 304 is prevented from affecting the adsorption process and the deposition process, thereby further improving the quality of the substrate subjected to the adsorption process and the deposition process. In addition, the substrate processing method according to the present invention may perform a treatment process on the substrate using the above steps in each of the first to eighth embodiments of the substrate processing apparatus according to the present invention.

[0141] It will be appreciated by those skilled in the art that the present invention can be implemented in other specific forms without changing the technical spirit or essential features. Therefore, it should be understood that the above embodiments are exemplary and non-restrictive in every respect. The scope of the present invention should be interpreted as being limited by the following claims rather than the specific description, and the meaning and scope of the claims and all variations or modifications derived from their equivalent concepts are included within the scope of the present invention.

Claims

1. A substrate processing method, comprising the following steps: When the first substrate is disposed in a first region of the processing space of the chamber, spraying a source gas toward the first region to perform an adsorption process; rotating a substrate supporting unit for supporting the first substrate to dispose the first substrate in a second region of the processing space of the chamber; When the first substrate is disposed in the second region, spraying a reaction gas toward the second region to perform a deposition process; as well as causing the substrate supporting unit to rotate to place the first substrate in the first area, In the step of rotating a substrate supporting unit for supporting the first substrate to dispose the first substrate in a second region of the processing space of the chamber, plasma processing is performed on the first substrate to which the source gas is adsorbed. The method of claim 1 , wherein two substrates are located in the processing volume. The method according to claim 1 , wherein a plasma gas is injected as the reaction gas.

4. A substrate processing method comprising the following steps: When the first substrate is disposed in a first region of the processing space of the chamber, spraying a source gas toward the first region to perform an adsorption process; rotating a substrate supporting unit for supporting the first substrate to dispose the first substrate in a second region of the processing space of the chamber; When the first substrate is disposed in the second region, spraying a reaction gas toward the second region to perform a deposition process; as well as causing the substrate supporting unit to rotate to place the first substrate in the first area, wherein in the step of rotating the substrate supporting unit to dispose the first substrate in the first region, plasma processing is performed on the first substrate having the deposited film formed thereon. The method of claim 4 , wherein two substrates are located in the processing volume.

6. A substrate processing method comprising the following steps: When the first substrate is disposed in a first region of the processing space of the chamber, spraying a source gas toward the first region to perform an adsorption process; rotating a substrate supporting unit for supporting the first substrate to dispose the first substrate in a second region of the processing space of the chamber; When the first substrate is disposed in the second region, spraying a reaction gas toward the second region to perform a deposition process; as well as causing the substrate supporting unit to rotate to place the first substrate in the first area, wherein in the step of rotating a substrate supporting unit for supporting the first substrate to dispose the first substrate in the second region of the processing space of the chamber, plasma processing is performed on the first substrate to which the source gas is adsorbed, wherein in the step of rotating the substrate supporting unit to dispose the first substrate in the first region, plasma processing is performed on the first substrate having the deposited film formed thereon. The method of claim 6 , wherein two substrates are located in the processing volume.

8. A substrate processing device, comprising: Chamber; a substrate supporting unit rotatably mounted in a processing space of the chamber to support one or more substrates; a first gas injection unit, configured to inject source gas into a first region of the processing space; a second gas injection unit for injecting a reaction gas into a second region of the processing space, wherein the reaction gas reacts with the source gas; and A third gas injection unit is used to inject a purification gas into the third area, wherein the purification gas divides the first area and the second area. Wherein plasma is formed in the second region. 9 . The apparatus of claim 8 , wherein the plasma gas is sprayed toward the second region by the second gas spraying unit.

10. The apparatus according to claim 8, wherein the plasma is formed by configuring a first electrode and a second electrode having a potential difference.

11. The apparatus of claim 10, wherein the plasma is formed between the first electrode and the second electrode.

12. The apparatus of claim 8, wherein two substrates are located in the processing volume.

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