Production method and system of silicon-carbon negative electrode material
By using image acquisition and feature recognition technology in the production of silicon carbon negative electrode materials, the required activation dose is accurately calculated, and the problems of activator waste and porous structure formation are solved, achieving an efficient production process and cost-reducing effect.
Patent Information
- Application Number
- CN202411541952.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-31
- Publication Date
- 2025-02-07
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
In the production process of silicon carbon anode material, insufficient absorption of the activator by the bio-based material leads to wasting of the activator, and the porous structure cannot be formed when the activated agent solution is too small.
By obtaining the total amount of crushed material in the material placement area, determining the sampling area and obtaining sample detection images, feature division and identification are performed to determine the material feature type and area area, calculating the required activation dose and mixing with the material for porous and silicon-carbonization processing.
Reduces the waste of activators, ensures the normal production of porous carbon, reduces production costs, and improves the accuracy of data analysis.
Smart Images
Figure CN119400848A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of battery material production technology, and in particular to a method and system for producing silicon-carbon negative electrode materials. Background Art
[0002] As lithium-ion batteries develop into large-scale application fields, indicators such as lithium-ion energy density need to be further improved. In terms of negative electrode materials, the traditional graphite negative electrode has a theoretical specific capacity of 372mAh / g, which can no longer meet the needs of high-energy density batteries. Silicon-carbon materials have attracted much attention due to their theoretical specific capacity of up to 4200mAh / g.
[0003] At present, the production of silicon-carbon negative electrode materials can be achieved by using porous carbon as raw material and silane deposition, acetylene coating and other technologies. The porous carbon can be obtained from bio-based raw materials, and the main steps include raw material pretreatment, alkaline activation treatment, carbonization treatment and post-treatment. The raw material pretreatment includes crushing the dried bio-based material into smaller particles or powders to increase the specific surface area of the material and improve the efficiency of subsequent reactions. The alkaline activation treatment includes preparing a suitable activator solution, and soaking the pretreated bio-based material in the activator solution so that the material can fully absorb the activator, and then placing the impregnated material together with the activator solution into a reaction vessel, and heating it so that the subsequent bio-based material and the alkaline activator react to form a porous structure.
[0004] In the above-mentioned related technologies, when soaking the bio-based material, in order to make the bio-based material absorb the activator more fully, it is necessary to provide more activator solution for the material to be soaked. After the bio-based material is fully absorbed, the remaining activator will form waste liquid in the subsequent treatment and cannot be used further, thereby resulting in a waste of the activator solution. Once the activator solution provided is less, the bio-based material cannot perform the porous structure reaction well. Therefore, how to select an appropriate amount of activator solution according to the bio-based material to reduce the waste of the activator is a problem that needs to be solved urgently. Summary of the invention
[0005] In order to reduce the waste of activators in the porous carbon production process, the present application provides a method and system for producing silicon-carbon negative electrode materials.
[0006] In the first aspect, the present application provides a method for producing a silicon-carbon negative electrode material, which adopts the following technical solution: A method for producing a silicon-carbon negative electrode material, comprising: Obtain the total amount of crushed material in a preset material placement area; Determine a sampling area in the material placement area according to a preset required quantity, and control a preset image acquisition device to acquire a sample detection image at the sampling area; Performing feature segmentation in each sample detection image to determine a material feature area, and performing feature recognition based on each material feature area to determine a material feature type; Determine the material area according to each material characteristic area, and sum up all material area areas under the same material characteristic type to determine the single type comprehensive area; Calculate the single-type comprehensive area corresponding to different material feature types to determine the single-type area ratio; The single-type area proportions corresponding to the same material feature type determined in different sample detection images are averaged to determine the single-type comprehensive proportions, and the single-type material quantity is determined based on the single-type comprehensive proportions of each material feature type and the total amount of crushed material; Determine the required activation dosage corresponding to the material characteristic type and the single type material quantity according to the preset activation matching relationship; The total required amount is determined by summing up all required activating amounts, and the total required amount of activating agent and material are controlled to be mixed. After the mixing is completed, a preset porous processing and a preset silicon carbide processing are sequentially performed to generate a silicon-carbon negative electrode material.
[0007] Optionally, the step of determining a sampling area in the material placement area according to a preset required quantity includes: Get an overall image of the area where the material is placed; Randomly generate simulation areas in the overall image of the region according to the required number and the preset sampling range, and form a simulation combination based on all the simulation areas; A simulation combination in which no simulation area overlaps is defined as a valid combination, and all simulation areas are randomly sorted in the valid combination to construct a regional connection circle, wherein there is a directional connection key between two adjacent simulation areas in the regional connection circle; Determine the distance between two simulated areas connected by the direction connection key in the area connection circle; Calculate the distance deviation value based on the distances between all areas and the preset reasonable distances; Determine the distance deviation value with the smallest value according to a preset sorting rule, and define the distance deviation value as the preferred deviation value of the effective combination; A preferred deviation value with the smallest value is determined according to the sorting rule, and a simulation area corresponding to the preferred deviation value is defined as a sampling area.
[0008] Optionally, after the preferred deviation value is determined, the method for producing a silicon-carbon negative electrode material further comprises: Determine whether there are at least two valid combinations with the same and minimum preferred deviation values; If there are no at least two valid combinations with the same and smallest preferred deviation values, the sampling area is defined according to the simulation area included in the valid combination corresponding to the smallest preferred deviation value; If there are at least two valid combinations with the same and smallest preferred deviation values, the valid combination corresponding to the smallest preferred deviation value is defined as the alternative combination; Determine a pixel depth value according to each pixel point in the simulation area corresponding to the candidate combination, and define a pixel point whose pixel depth value is consistent with a preset empty depth as an empty point; In a single simulation area, count the empty points to determine the number of empty releases, and calculate the empty release ratio based on the empty release number and the preset regional benchmark number; The alternative combinations whose empty-release ratios corresponding to all simulation areas are less than the preset upper limit ratio are defined as reasonable combinations, and one reasonable combination is selected from all reasonable combinations to determine the sampling area.
[0009] Optionally, the step of selecting a reasonable combination from all reasonable combinations to determine the sampling area includes: The ratio deviation value is determined by calculating the empty ratio of all simulation areas in a single reasonable combination and the preset optimal ratio; The smallest proportion deviation value is determined according to the sorting rules, and a reasonable combination corresponding to the proportion deviation value is selected to determine the sampling area.
[0010] Optionally, after the percentage deviation value is determined, the method for producing the silicon-carbon negative electrode material further includes: The pixel points that are not empty points in each reasonably combined simulation area are defined as actual points, and the pixel depth values of the actual points are defined as actual depth values; In the same simulation area, the average depth value is determined by averaging the actual depth values; The area flatness is determined by calculating all actual depth values and the average depth value, and the combined flatness is determined by averaging all the area flatness values; The proportion adjustment value corresponding to the combined flatness is determined according to the preset adjustment matching relationship, and the proportion deviation value is updated according to the proportion adjustment value.
[0011] Optionally, after the comprehensive proportion of a single type is determined, the method for producing silicon-carbon negative electrode materials further includes: The difference calculation is performed based on the single-type regional proportion and the corresponding single-type comprehensive proportion to determine the single-type difference proportion; Determine whether there is a situation where the single type difference ratio is greater than the preset allowable difference ratio; If there is no situation where the single-type difference ratio is greater than the permitted difference ratio, the single-type material quantity is determined based on the determined single-type comprehensive ratio; If there is a situation where the single-type difference ratio is greater than the permitted difference ratio, the sampling area corresponding to the single-type area ratio corresponding to the single-type difference ratio is defined as an invalid area; In the material placement area, the area outside the sampling area is defined as a selectable area, and a new sampling area is generated in the selectable area to replace the invalid area, and the single-type difference ratio is re-determined according to the new invalid area until there is no situation where the single-type difference ratio is greater than the allowed difference ratio.
[0012] Optionally, the step of generating a new sampling area in the selectable area to replace the invalid area includes: The currently determined minimum preferred deviation value is defined as the standard deviation value; Taking the center point of the invalid area as the midpoint and the preset expansion distance as the radius, a preferred replacement area that does not include the invalid area is constructed; A compensation area is randomly generated in the preferred replacement area, and the invalid area in the current area connection circle is replaced according to the compensation area to re-determine the preferred deviation value, and the preferred deviation value is defined as the replacement deviation value; Perform difference calculation based on the standard deviation value and the replacement deviation value to determine the deviation change value; Determine whether the deviation change value is less than the preset allowable change value; If the deviation change value is less than the allowable change value, the generated compensation area is used as a new sampling area to replace the invalid area; If the deviation change value is not less than the allowable change value, the compensation area is randomly regenerated.
[0013] In the second aspect, the present application provides a silicon-carbon negative electrode material production system, which adopts the following technical solution: A silicon-carbon negative electrode material production system, comprising: An acquisition module, used for acquiring the total amount of crushed materials in a preset material placement area; A processing module, connected to the acquisition module, for storing and processing information; The processing module determines a sampling area in the material placement area according to a preset required quantity, and controls a preset image acquisition device to acquire a sample detection image at the sampling area; The processing module performs feature division in each sample detection image to determine a material feature area, and performs feature recognition according to each material feature area to determine a material feature type; The processing module determines the material area according to each material characteristic area, and calculates the sum of all material area areas under the same material characteristic type to determine the single type comprehensive area; The processing module calculates the single-type comprehensive area corresponding to different material feature types to determine the single-type area ratio; The processing module calculates the average of the single-type area proportions corresponding to the same material feature type determined in different sample detection images to determine the single-type comprehensive proportion, and calculates the single-type material amount according to the single-type comprehensive proportions of each material feature type and the total amount of crushed material; The processing module determines the material characteristic type and the required activation dosage corresponding to the single type material quantity according to the preset activation matching relationship; The processing module calculates and sums all required activating amounts to determine the overall required amount, and controls the mixing of the overall required amount of activating agent and material, and after the mixing is completed, sequentially performs a preset porous processing and a preset silicon carbide processing to generate a silicon-carbon negative electrode material.
[0014] In summary, the present application includes at least one of the following beneficial technical effects: 1. When producing silicon-carbon negative electrode materials, the appropriate amount of activator can be matched according to the specific conditions of the bio-based materials, which can reduce the waste of activator and enable the normal generation of porous carbon, thereby reducing production costs; 2. When determining the sampling area, comprehensively analyze the characteristic content and characteristic flatness of the sample to make the selected sample area representative, so as to facilitate a more accurate determination of the proportion of each characteristic type; 3. When selecting samples, compare the specific conditions of each sample to eliminate some unrepresentative samples, eliminate errors caused by samples, and improve the accuracy of data analysis. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 It is a flow chart of the production method of silicon-carbon negative electrode materials.
[0016] Figure 2 It is a module flow chart of the production method of silicon-carbon negative electrode materials. DETAILED DESCRIPTION
[0017] In order to make the purpose, technical solutions and advantages of this application more clear, the following Figure 1-Figure 2 It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.
[0018] The embodiments of the present application are further described in detail below in conjunction with the drawings in the specification.
[0019] The present application discloses a method for producing a silicon-carbon negative electrode material. Figure 1 The method flow of the silicon-carbon negative electrode material production method includes the following steps: Step S100: Obtain the total amount of crushed material in a preset material placement area.
[0020] The material placement area is an area for placing dried and crushed bio-based materials, wherein the bio-based materials are spread flat in the material placement area; the total amount of crushed materials is the weight of the bio-based materials used to produce porous carbon, which can be obtained by installing a weight sensor at the bottom of the material placement area.
[0021] Step S101: determining a sampling area in a material placement area according to a preset required quantity, and controlling a preset image acquisition device to acquire a sample detection image at the sampling area.
[0022] The required number is the number of sampling points required set by the staff, the sampling area is the area for sampling and testing of bio-based materials, the required number of sampling areas can be randomly generated in the material placement area, or the sampling area can be determined according to the method of step S200-step S206; the image acquisition device is a camera installed directly above the material placement area with the shooting lens facing downward and capable of taking high-definition images, and the sample detection image is an image that only records the location of the sampling area.
[0023] Step S102: performing feature segmentation in each sample detection image to determine a material feature region, and performing feature recognition according to each material feature region to determine a material feature type.
[0024] The material feature region is the region where the sample features exist. The division between features can be trained in advance by means of neural network learning to ensure that different types of bio-based materials will not be divided into the same material feature region during the material feature region division process; the material feature type is the type of bio-based material corresponding to the material feature region, such as plant straw, peel, fruit shell, wood fiber, etc. The corresponding feature recognition method can also be realized by training a corresponding recognition model to achieve it.
[0025] Step S103: determining the material area according to each material feature area, and summing up all the material area areas under the same material feature type to determine a single-type comprehensive area.
[0026] The material region area is the area of the material characteristic region, and the single-type comprehensive area is the total area of the same type of bio-based materials in a single sampling area, which can be determined by summing up the material region areas determined by the same material characteristic type.
[0027] Step S104: Calculate the single-type comprehensive areas corresponding to different material feature types to determine the single-type area ratio.
[0028] The single-type area ratio is the ratio of one type of bio-based material to all bio-based materials in the sampling area, which can be determined by dividing a single-type comprehensive area by the sum of all single-type comprehensive areas.
[0029] Step S105: Calculate the average of the single-type area proportions corresponding to the same material feature type determined in different sample detection images to determine the single-type comprehensive proportion, and calculate the single-type material amount based on the single-type comprehensive proportions of each material feature type and the total amount of crushed material.
[0030] The single-type comprehensive proportion is the average of all single-type regional proportions determined under the same type of bio-based material. This proportion can objectively reflect the ratio of this type of bio-based material to the currently crushed bio-based material. By multiplying the single-type comprehensive proportion by the total amount of crushed material, the weight of each type of bio-based material can be obtained in theory, that is, the amount of single-type material.
[0031] Step S106: Determine the required activation amount corresponding to the material feature type and the single-type material amount according to the preset activation matching relationship.
[0032] The required activation dose is the amount of activator required to perform a good alkaline activation reaction on the bio-based material of the material characteristic type of a single type of material quantity. Different material characteristic types and single type of material quantities correspond to different required activation doses. The activation matching relationship between the three is determined by the staff in advance through multiple tests to ensure that the determined required activation dose meets the requirements.
[0033] Step S107: performing a summation calculation based on all required activator amounts to determine the overall required amount, and controlling the overall required amount of activator to be mixed with the material, and after the mixing is completed, sequentially performing a preset porosification process and a preset silicon carbide process to generate a silicon-carbon negative electrode material.
[0034] The overall demand, i.e., the total amount of activator required for alkaline activation treatment of the current batch of bio-based materials, can be determined by summing up the required amounts of activators. By mixing the overall required amount of activator with the material, the bio-based material can fully absorb the activator, and then the porous carbon required for making silicon-carbon negative electrode materials can be obtained through subsequent porosification processing. The porous carbon is used as the raw material and the required silicon-carbon negative electrode materials can be obtained through silicon carbide processing. The porosification processing can include standing, heating, washing and filtering, high-temperature carbonization and other steps, and the silicon carbide processing can include cleaning, silane deposition, acetylene coating, post-treatment and other steps.
[0035] The steps of determining the sampling area according to the preset required quantity in the material placement area include: Step S200: Acquire an overall image of the material placement area.
[0036] The overall regional image is a regional image of the material placement area, which can be acquired by photographing through an image acquisition device.
[0037] Step S201: randomly generate simulation areas in the overall regional image according to the required number and a preset sampling range, and form a simulation combination based on all the simulation areas.
[0038] The sampling range is the range of the sampling area that needs to be determined. Generally, this range is a circle. The specific distribution of the sampling area can be simulated by randomly generating simulation areas, which is convenient for subsequent analysis. The simulation combination is a combination that includes all simulation areas.
[0039] Step S202: defining a simulation combination in which no simulation areas overlap as a valid combination, and randomly sorting all simulation areas in the valid combination to construct an area connection circle, wherein there is a direction connection key between two adjacent simulation areas in the area connection circle.
[0040] Valid combinations are defined to distinguish different simulation combinations, thereby eliminating the situation where sampling overlaps; the area connection circle is a circle formed by connecting and enclosing each simulation area in sequence, where two simulation areas are connected by direction connection keys, and the direction connection keys in the same area connection circle are the same, that is, all are clockwise or all are counterclockwise.
[0041] Step S203: determining the distance between two simulated areas connected by the direction connection key in the area connection circle.
[0042] The area separation distance is the distance between two simulation areas, and can be determined by the distance between the center points of the simulation areas.
[0043] Step S204: Calculate the distance deviation value according to the distances between all the regions and the preset reasonable distances between the regions.
[0044] Reasonable interval distance is the optimal interval distance set by the staff to determine that each simulation area can be effectively spread over the material placement area; the distance deviation value is a parameter that reflects the quality of the current interval distance between the areas. The larger the value, the more unreasonable the interval between the areas, and the worse the effect of sampling and testing at this time; the calculation formula of the distance deviation value is: ,in is the distance deviation value, To maintain a reasonable distance, For the The distance between the regions, is the total number of distances between all regions.
[0045] Step S205: determining a distance deviation value with a minimum value according to a preset sorting rule, and defining the distance deviation value as a preferred deviation value of the valid combination.
[0046] The sorting rule is a method set by the staff with the function of comparing numerical values, such as the bubble method. The sorting rule can be used to determine the minimum distance deviation value, that is, the best distance deviation value that can be achieved under the effective combination. At this time, it is defined as the preferred deviation value for recording.
[0047] Step S206: determining a preferred deviation value with the smallest value according to the sorting rule, and defining a simulation area corresponding to the preferred deviation value as a sampling area.
[0048] The optimal deviation value with the smallest value can be determined through the sorting rules. That is, the arrangement of the simulation areas in the corresponding simulation combination is more reasonable at this time, which can reflect the effective distribution of sampling. At this time, it can be determined as the sampling area for subsequent analysis.
[0049] After the preferred deviation value is determined, the method for producing the silicon-carbon negative electrode material further includes: Step S300: Determine whether there are at least two valid combinations with the same and minimum preferred deviation values.
[0050] The purpose of the judgment is to find out whether there are multiple valid combinations that meet the requirements, so as to facilitate the determination of the sampling area.
[0051] Step S3001: If there are no at least two valid combinations with the same and smallest preferred deviation values, a sampling area is defined according to the simulation area included in the valid combination corresponding to the smallest preferred deviation value.
[0052] When there are not at least two valid combinations with the same and smallest preferred deviation values, it means that there is only one valid combination that meets the requirements. In this case, the sampling area can be defined according to the simulation area in the valid combination.
[0053] Step S3002: If there are at least two valid combinations with the same and smallest preferred deviation values, the valid combination corresponding to the smallest preferred deviation value is defined as an alternative combination.
[0054] When there are at least two valid combinations with the same and smallest preferred deviation values, it means that there are multiple valid combinations that meet the requirements. In this case, they are defined as alternative combinations to distinguish different valid combinations for subsequent analysis.
[0055] Step S301: determining a pixel depth value according to each pixel point in a simulation area corresponding to the candidate combination, and defining a pixel point whose pixel depth value is consistent with a preset empty depth as an empty point.
[0056] The pixel depth value is the distance value from the acquired pixel point to the image acquisition device in the height direction. The empty depth is the distance value from the surface of the material placement area to the image acquisition device in the height direction. When the pixel depth value is consistent with the empty depth, it means that no bio-based material is placed at the pixel point position. At this time, it is defined as an empty point to distinguish different pixel points.
[0057] Step S302: Counting the empty points in a single simulation area to determine the number of empty slots, and calculating the empty slot ratio based on the number of empty slots and a preset regional benchmark number.
[0058] The number of empty releases is the total number of empty release points determined, which can be determined by counting the empty release points one by one; the regional benchmark number is the total number of pixel points that can be obtained in a single simulation area, and the empty release ratio is the ratio of empty release points to the simulation area, which can be determined by dividing the number of empty releases by the regional benchmark number.
[0059] Step S303: define the candidate combinations whose empty placement ratios corresponding to all simulation areas are less than the preset upper limit ratio as reasonable combinations, and select one reasonable combination from all reasonable combinations to determine the sampling area.
[0060] The upper limit percentage is the maximum empty placement percentage allowed when the staff determines that there are not many empty placement points in the simulation area so that sample testing cannot be carried out. When all empty placement percentages are less than the upper limit percentage, it means that each simulation area can be tested well at this time. At this time, it is defined as a reasonable combination to achieve the distinction between different alternative combinations, so that the sampling area can be determined by selecting a reasonable combination. At this time, the sampling area is convenient for sample testing.
[0061] The steps of selecting a reasonable combination from all reasonable combinations to determine the sampling area include: Step S400: Calculate the ratio deviation value based on the empty ratio of all simulation areas in a single reasonable combination and the preset optimal ratio.
[0062] The optimal ratio is the empty ratio that is required to achieve good detection of sample features in the simulation area under theoretical conditions. When the empty ratio is large, it means that a large part of the image cannot be used and the detection effect is poor. When the empty ratio is small, it means that the sample features are too dense and difficult to distinguish. The ratio deviation value is a parameter that reflects whether the empty ratio of each simulation area is reasonable. The smaller the value, the more reasonable the selected simulation area is, and the easier it is to analyze the batch of bio-based materials. The calculation method of the ratio deviation value is similar to the above-mentioned distance deviation value, which will not be repeated here.
[0063] Step S401: Determine the smallest proportion deviation value according to the sorting rule, and select a reasonable combination corresponding to the proportion deviation value to determine the sampling area.
[0064] The smallest percentage deviation value can be determined through the sorting rules, that is, the simulation area selected at this time is most convenient for sample detection and processing. At this time, the sampling area can be determined based on the reasonable combination.
[0065] After the percentage deviation value is determined, the silicon-carbon negative electrode material production method further includes: Step S500: defining pixel points that are not empty points in each reasonably combined simulation area as actual points, and defining pixel depth values of the actual points as actual depth values.
[0066] Define actual points and actual depth values to distinguish different data for subsequent analysis.
[0067] Step S501: performing mean calculation according to actual depth values in the same simulation area to determine an average depth value.
[0068] The average depth value is the average of the actual depth values of the determined actual points.
[0069] Step S502: performing calculations based on all actual depth values and the average depth value to determine the regional flatness, and performing average calculations based on all regional flatnesses to determine the combined flatness.
[0070] Regional flatness is a parameter value that reflects whether the material in the simulation area is flat. The larger the value, the flatter the material. At this time, the material proportion determined is also more accurate. The calculation formula for regional flatness is: ,in is the regional flatness, are fixed parameters used for calculation, For the The actual depth value, is the average depth value, is the total number of actual depth values; the combined flatness is the average of the regional flatnesses of all simulated areas determined.
[0071] Step S503: determining a proportion adjustment value corresponding to the combined flatness according to a preset adjustment matching relationship, and updating the proportion deviation value according to the proportion adjustment value.
[0072] The proportion adjustment value is a parameter value used to update the proportion deviation value. The greater the combination flatness, the flatter the samples in each simulation area. At this time, the sample detection effect is better, so the corresponding proportion adjustment value is also larger. The adjustment matching relationship between the two is determined and entered in advance by the staff. The proportion deviation value is updated by subtracting the proportion adjustment value from the proportion deviation value, so that the subsequent selected reasonable combination is convenient for sample analysis.
[0073] After the comprehensive proportion of a single type is determined, the production method of silicon-carbon negative electrode materials also includes: Step S600: performing difference calculation based on the single-type area proportion and the corresponding single-type comprehensive proportion to determine the single-type difference proportion.
[0074] The single-type difference ratio is the difference between the single-type regional ratio and the corresponding single-type comprehensive ratio, and the difference is an absolute value.
[0075] Step S601: Determine whether there is a situation where the proportion of single-type difference is greater than the preset allowable difference proportion.
[0076] The allowable difference ratio is the maximum single-type difference ratio allowed when the staff determines that the ratio data of each simulation combination are relatively accurate. The purpose of the judgment is to find out whether there is a situation in the currently selected sample area that cannot represent the ratio of each type of material in the batch of materials.
[0077] Step S6011: If there is no situation where the single-type difference ratio is greater than the allowed difference ratio, the single-type material quantity is determined according to the determined single-type comprehensive ratio.
[0078] When there is no situation where the proportion of single-type difference is greater than the allowable difference proportion, it means that there is no situation where the proportion of material in any simulation area is obviously abnormal. At this time, the amount of single-type material can be determined normally.
[0079] Step S6012: If the single-type difference ratio is greater than the permitted difference ratio, the sampling area corresponding to the single-type area ratio corresponding to the single-type difference ratio is defined as an invalid area.
[0080] When the proportion of single-type differences is greater than the allowable difference proportion, it means that the proportion of materials in the simulation area is obviously abnormal. At this time, it is defined as an invalid area to distinguish different sampling areas and facilitate subsequent analysis.
[0081] Step S602: In the material placement area, define the area outside the sampling area as a selectable area, generate a new sampling area in the selectable area to replace the invalid area, and redetermine the single-type difference ratio based on the new invalid area until there is no situation where the single-type difference ratio is greater than the allowed difference ratio.
[0082] Define selectable areas to identify the locations of areas that can be replaced, so that subsequent analysis of material samples can be facilitated by regenerating sampling areas, thereby reducing the occurrence of inaccurate analyzed data due to problems with the division of some simulation areas; wherein, the new sampling area can be generated randomly or by the method of steps S700-S7042.
[0083] The steps of generating a new sampling area in the selectable area to replace the invalid area include: Step S700: define the currently determined minimum preferred deviation value as the standard deviation value.
[0084] The standard deviation value is defined to distinguish different preferred deviation values for the convenience of subsequent analysis.
[0085] Step S701: constructing a preferred replacement area that does not include the invalid area by taking the center point of the invalid area as the midpoint and the preset expansion distance as the radius.
[0086] The expansion distance is the distance within a certain range around the invalid area set by the staff. By constructing a preferred replacement area to delineate the area where a new sampling area can be generated, it is convenient for subsequent analysis.
[0087] Step S702: randomly generate a compensation area in the preferred replacement area, and replace the invalid area in the current area connection circle according to the compensation area to re-determine the preferred deviation value, and define the preferred deviation value as the replacement deviation value.
[0088] By randomly generating compensation areas, the generation of the sampling area can be simulated, so that the deviation value can be replaced to facilitate subsequent analysis.
[0089] Step S703: performing a difference calculation based on the standard deviation value and the replacement deviation value to determine the deviation change value.
[0090] The deviation change value is the difference between the standard deviation value and the replacement deviation value, and the difference is an absolute value.
[0091] Step S704: Determine whether the deviation change value is less than a preset allowable change value.
[0092] The allowable change value is the maximum deviation change value allowed when the compensation area determined by the staff is geographically close to the previous invalid area. The purpose of the judgment is to know whether the currently generated compensation area meets the sampling distribution requirements.
[0093] Step S7041: If the deviation change value is less than the allowable change value, the generated compensation area is used as a new sampling area to replace the invalid area.
[0094] When the deviation change value is less than the allowable change value, it means that the determined compensation area meets the requirements, and the replacement process can be carried out normally.
[0095] Step S7042: If the deviation change value is not less than the allowed change value, the compensation area is randomly regenerated.
[0096] When the deviation change value is not less than the allowable change value, it means that the current randomly generated compensation area cannot meet the sampling distribution requirements, so the compensation area is regenerated for re-analysis.
[0097] Reference Figure 2 Based on the same inventive concept, an embodiment of the present invention provides a silicon-carbon negative electrode material production system, comprising: An acquisition module, used for acquiring the total amount of crushed materials in a preset material placement area; A processing module, connected to the acquisition module, for storing and processing information; The processing module determines a sampling area in the material placement area according to a preset required quantity, and controls a preset image acquisition device to acquire a sample detection image at the sampling area; The processing module performs feature division in each sample detection image to determine a material feature area, and performs feature recognition according to each material feature area to determine a material feature type; The processing module determines the material area according to each material characteristic area, and calculates the sum of all material area areas under the same material characteristic type to determine the single type comprehensive area; The processing module calculates the single-type comprehensive area corresponding to different material feature types to determine the single-type area ratio; The processing module calculates the average of the single-type area proportions corresponding to the same material feature type determined in different sample detection images to determine the single-type comprehensive proportion, and calculates the single-type material amount according to the single-type comprehensive proportions of each material feature type and the total amount of crushed material; The processing module determines the material characteristic type and the required activation dosage corresponding to the single type material quantity according to the preset activation matching relationship; The processing module calculates and sums all the required activating amounts to determine the overall required amount, and controls the mixing of the activating agent and the material of the overall required amount, and after the mixing is completed, sequentially performs a preset porous processing and a preset silicon carbide processing to generate a silicon-carbon negative electrode material; A sampling area determination module is used to determine a more appropriate sampling area for use; An effective combination screening module is used to screen multiple effective combinations that meet the requirements; A reasonable combination selection module is used to select a unique reasonable combination from multiple reasonable combinations for sampling area determination; The proportion deviation value updating module updates the proportion deviation value according to the sample flattening condition; The sampling area replacement module is used to replace some sampling areas with data errors; The sampling area updating module is used to generate a new and appropriate sampling area to replace and update the invalid area.
[0098] Those skilled in the art can clearly understand that for the convenience and simplicity of description, only the division of the above-mentioned functional modules is used as an example. In actual applications, the above-mentioned functions can be assigned to different functional modules as needed, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above. The specific working process of the above-described system, device and unit can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here.
Claims
1. A method for producing a silicon-carbon negative electrode material, characterized in that: include: Obtain the total amount of crushed material in a preset material placement area; Determine a sampling area in the material placement area according to a preset required quantity, and control a preset image acquisition device to acquire a sample detection image at the sampling area; Performing feature segmentation in each sample detection image to determine a material feature area, and performing feature recognition based on each material feature area to determine a material feature type; Determine the material area according to each material characteristic area, and sum up all material area areas under the same material characteristic type to determine the single type comprehensive area; Calculate the single-type comprehensive area corresponding to different material feature types to determine the single-type area ratio; The single-type area proportions corresponding to the same material feature type determined in different sample detection images are averaged to determine the single-type comprehensive proportions, and the single-type material quantity is determined based on the single-type comprehensive proportions of each material feature type and the total amount of crushed material; Determine the required activation dosage corresponding to the material characteristic type and the single-type material quantity according to the preset activation matching relationship; The total required amount is determined by summing up all required activating amounts, and the total required amount of activating agent and material are controlled to be mixed. After the mixing is completed, a preset porous processing and a preset silicon carbide processing are sequentially performed to generate a silicon-carbon negative electrode material.
2. The method for producing a silicon-carbon negative electrode material according to claim 1, characterized in that: The steps of determining the sampling area according to the preset required quantity in the material placement area include: Get an overall image of the area where the material is placed; Randomly generate simulation areas in the overall image of the region according to the required number and the preset sampling range, and form a simulation combination based on all the simulation areas; A simulation combination in which no simulation area overlaps is defined as a valid combination, and all simulation areas are randomly sorted in the valid combination to construct a regional connection circle, wherein there is a directional connection key between two adjacent simulation areas in the regional connection circle; Determine the distance between two simulated areas connected by the direction connection key in the area connection circle; Calculate the distance deviation value based on the distances between all areas and the preset reasonable distances; Determine the distance deviation value with the smallest value according to a preset sorting rule, and define the distance deviation value as the preferred deviation value of the effective combination; A preferred deviation value with the smallest value is determined according to the sorting rule, and a simulation area corresponding to the preferred deviation value is defined as a sampling area.
3. The method for producing a silicon-carbon negative electrode material according to claim 2, characterized in that: After the preferred deviation value is determined, the method for producing the silicon-carbon negative electrode material further includes: Determine whether there are at least two valid combinations with the same and minimum preferred deviation values; If there are no at least two valid combinations with the same and smallest preferred deviation values, the sampling area is defined according to the simulation area included in the valid combination corresponding to the smallest preferred deviation value; If there are at least two valid combinations with the same and smallest preferred deviation values, the valid combination corresponding to the smallest preferred deviation value is defined as the alternative combination; Determine a pixel depth value according to each pixel point in the simulation area corresponding to the candidate combination, and define a pixel point whose pixel depth value is consistent with a preset empty depth as an empty point; In a single simulation area, count the empty points to determine the number of empty releases, and calculate the empty release ratio based on the empty release number and the preset regional benchmark number; The alternative combinations whose empty-release ratios corresponding to all simulation areas are less than the preset upper limit ratio are defined as reasonable combinations, and one reasonable combination is selected from all reasonable combinations to determine the sampling area.
4. The method for producing a silicon-carbon negative electrode material according to claim 3, characterized in that: The steps of selecting a reasonable combination from all reasonable combinations to determine the sampling area include: The ratio deviation value is determined by calculating the empty ratio of all simulation areas in a single reasonable combination and the preset optimal ratio; The smallest proportion deviation value is determined according to the sorting rules, and a reasonable combination corresponding to the proportion deviation value is selected to determine the sampling area.
5. The method for producing a silicon-carbon negative electrode material according to claim 4, characterized in that: After the percentage deviation value is determined, the silicon-carbon negative electrode material production method further includes: The pixel points that are not empty points in each reasonably combined simulation area are defined as actual points, and the pixel depth values of the actual points are defined as actual depth values; In the same simulation area, the average depth value is determined by averaging the actual depth values; The area flatness is determined by calculating all actual depth values and the average depth value, and the combined flatness is determined by averaging all the area flatness values; The proportion adjustment value corresponding to the combined flatness is determined according to the preset adjustment matching relationship, and the proportion deviation value is updated according to the proportion adjustment value.
6. The method for producing a silicon-carbon negative electrode material according to claim 2, characterized in that: After the comprehensive proportion of a single type is determined, the production method of silicon-carbon negative electrode materials also includes: The difference calculation is performed based on the single-type regional proportion and the corresponding single-type comprehensive proportion to determine the single-type difference proportion; Determine whether there is a situation where the single type difference ratio is greater than the preset allowable difference ratio; If there is no situation where the single-type difference ratio is greater than the permitted difference ratio, the single-type material quantity is determined based on the determined single-type comprehensive ratio; If there is a situation where the single-type difference ratio is greater than the permitted difference ratio, the sampling area corresponding to the single-type area ratio corresponding to the single-type difference ratio is defined as an invalid area; In the material placement area, the area outside the sampling area is defined as a selectable area, and a new sampling area is generated in the selectable area to replace the invalid area, and the single-type difference ratio is re-determined according to the new invalid area until there is no situation where the single-type difference ratio is greater than the allowed difference ratio.
7. The method for producing a silicon-carbon negative electrode material according to claim 6, characterized in that: The steps of generating a new sampling area in the selectable area to replace the invalid area include: The currently determined minimum preferred deviation value is defined as the standard deviation value; Taking the center point of the invalid area as the midpoint and the preset expansion distance as the radius, a preferred replacement area that does not include the invalid area is constructed; A compensation area is randomly generated in the preferred replacement area, and the invalid area in the current area connection circle is replaced according to the compensation area to re-determine the preferred deviation value, and the preferred deviation value is defined as the replacement deviation value; Perform difference calculation based on the standard deviation value and the replacement deviation value to determine the deviation change value; Determine whether the deviation change value is less than the preset allowable change value; If the deviation change value is less than the allowable change value, the generated compensation area is used as a new sampling area to replace the invalid area; If the deviation change value is not less than the allowable change value, the compensation area is randomly regenerated.
8. A silicon-carbon negative electrode material production system, characterized in that: include: An acquisition module, used for acquiring the total amount of crushed materials in a preset material placement area; A processing module, connected to the acquisition module, for storing and processing information; The processing module determines a sampling area in the material placement area according to a preset required quantity, and controls a preset image acquisition device to acquire a sample detection image at the sampling area; The processing module performs feature division in each sample detection image to determine a material feature area, and performs feature recognition according to each material feature area to determine a material feature type; The processing module determines the material area according to each material characteristic area, and calculates the sum of all material area areas under the same material characteristic type to determine the single type comprehensive area; The processing module calculates the single-type comprehensive area corresponding to different material feature types to determine the single-type area ratio; The processing module calculates the average of the single-type area proportions corresponding to the same material feature type determined in different sample detection images to determine the single-type comprehensive proportion, and calculates the single-type material amount according to the single-type comprehensive proportions of each material feature type and the total amount of crushed material; The processing module determines the material characteristic type and the required activation dosage corresponding to the single-type material quantity according to the preset activation matching relationship; The processing module calculates and sums all required activating amounts to determine the overall required amount, and controls the mixing of the overall required amount of activating agent and material, and after the mixing is completed, sequentially performs a preset porous processing and a preset silicon carbide processing to generate a silicon-carbon negative electrode material.