Light conversion full-color Micro LED chip and manufacturing method thereof

Abstract

The invention discloses a light conversion full-color Mi cro LED chip and a manufacturing method. The light conversion full-color Mi cro LED chip comprises a transparent supporting substrate, a transparent adhesion layer, a transparent insulation protection layer, a light conversion layer, an annular light blocking layer, an epitaxial structure, a transparent conductive layer, an ohmic contact electrode, an insulation reflection layer, a wiring circuit, an insulation layer and a bonding wire electrode. Through redesign and corresponding structural layout of the Mi cro LED chip and a corresponding manufacturing process and method, the problem of light crosstalk existing in color conversion in the prior art is well solved, the quality of exciting light of the color-light conversion layer is effectively improved through packaging design, the light crosstalk is prevented, and the quality of the color-light conversion layer is improved. The reliability of products is greatly improved, the production efficiency is improved, the production requirements of enterprises are met, and the competitiveness of the enterprises is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a light-converting full-color Micro LED chip and a manufacturing method thereof. Background Art

[0002] Compared with the existing OLED technology, the new generation of display technology, micro light-emitting diode (Micro LED), not only has the characteristics of high luminous efficiency, high brightness and lower power consumption, but is also not easily affected by water vapor, oxygen or high temperature. Therefore, it has obvious advantages in stability, service life, operating temperature and other aspects.

[0003] At present, the technical solutions for Micro LED full-color displays are mainly divided into two categories: (1) Using Micro LED chips with three different luminous wavelengths of red, green and blue to arrange them into a pixel array at intervals to achieve full-color display. At least three mass transfers are required to complete the arrangement of Micro LED chips from three different epitaxial wafers of red, green and blue. Improving the yield and production efficiency of mass transfer is a key problem that needs to be solved in this technical solution; (2) Using blue light or near-ultraviolet light Micro LED chips to arrange them into an array, and then according to the arrangement of red, green and blue pixels, fluorescent materials are coated on the surface of the Micro LED chips corresponding to the corresponding pixels. Through the wavelength conversion of the fluorescent materials, pixels of the three primary colors of red, green and blue are realized.

[0004] In the prior art, the patent "System and method for multi-color LED with stacked bonding structure" proposes to stack the R, G, and B three-color chips vertically by bonding, thereby realizing full-color display; the patent "A Micro LED chip for full-color display" provides a Micro LED chip for full-color display, forming a red, blue, and green light-emitting structure on a single LED chip, which does not require the setting of an RGB array and a microlens, and a single Micro LED chip can complete full-color light emission; the patent "A Micro LED full-color display device and preparation method based on microfluidic technology" discloses a Micro LED full-color display device structure and preparation method based on microfluidic technology, which uses the substrate of the thinned Micro LED chip array as a substrate, etches pits corresponding to the Micro LED units on the substrate, presses the microfluidic cover plate with the substrate, and directly completes the preparation of the microfluidic chip on the substrate, and then injects a quantum dot solution to form a color conversion layer in the pits of the substrate, thereby realizing full-color display; the patent "A full-color Micro "LED and its preparation method" proposes a full-color MicroLED and its preparation method, including a driving substrate, on which a plurality of light-emitting units arranged in a rectangular array are arranged, the light-emitting units include a bonding metal layer, the bottom of the bonding metal layer is connected to the driving substrate, an epitaxial layer is arranged above the bonding metal layer, the cross-section of the epitaxial layer is trapezoidal, a passivation layer is deposited on the outer wall of the epitaxial layer surface, a light outlet is opened in the middle of the passivation layer at the top of the epitaxial layer, an N-electrode layer is deposited on the outer wall of the passivation layer, the N-electrode layer is electrically connected to the top of the epitaxial layer, a color conversion layer with a microlens structure is wrapped above the light-emitting unit, a light-blocking structure is arranged between the light-emitting units, and the light-blocking structure is close to the inner side of the light-emitting unit. The wall is arc-shaped; the quantum dots are filled to cover the entire light-emitting unit to reduce the light loss of the side walls, the light surface is made into a microlens form, and an arc-shaped light-blocking structure is added to prevent light crosstalk and improve the display effect; the patent "A quantum dot color conversion layer and its preparation method and application" proposes a method for preparing a quantum dot color conversion layer. By making a microfluidic chip, grooves and hydrophobic substances are introduced into the microchannel of the microfluidic chip, which solves the problems of uncontrollable thickness and shape of the quantum dot layer and color mixing that are easy to occur in the preparation of the color conversion layer; however, the above-mentioned public patents do not solve the problem of light crosstalk in the color conversion process very well, which greatly affects the product quality.

[0005] To solve the above problems, a new light-converting full-color Micro LED chip and manufacturing method were developed and designed. Summary of the invention

[0006] The purpose of the present invention is to provide a light-converting full-color Micro LED chip and a manufacturing method to solve the light crosstalk problem in color conversion and realize full-color display of color conversion.

[0007] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0008] A light-converting full-color Micro LED chip, comprising:

[0009] a transparent supporting substrate;

[0010] A transparent adhesive layer is provided on the transparent supporting substrate;

[0011] A transparent insulating protective layer is provided on the transparent adhesive layer;

[0012] A light conversion layer and an annular light blocking layer are arranged inside the transparent insulating protective layer, and the light conversion layer is completely surrounded by the annular light blocking layer;

[0013] An epitaxial structure is disposed on the transparent insulating protective layer, the light conversion layer, and the annular light blocking layer;

[0014] A transparent conductive layer is disposed on the epitaxial structure;

[0015] An ohmic contact electrode is provided on the epitaxial structure and the transparent conductive layer;

[0016] An insulating reflective layer is disposed above the ohmic contact electrode, the transparent conductive layer, the annular light blocking layer, and the epitaxial structure, and the insulating reflective layer is provided with a through hole penetrating from the top thereof to the surface of the ohmic contact electrode;

[0017] A wiring circuit is provided on the insulating reflective layer, and the wiring circuit is interconnected through the through hole of the insulating reflective layer and the ohmic contact electrode to achieve electrical connection;

[0018] An insulating layer is provided on the wiring line and the insulating reflective layer, and the insulating layer is provided with a through hole penetrating from the top to the surface of the wiring line;

[0019] A welding wire electrode is arranged on the insulating layer, and the welding wire electrode is interconnected with the wiring line through the through hole of the insulating layer to achieve electrical connection.

[0020] In a preferred embodiment, an annular metal circuit is disposed inside the insulating reflective layer; the annular metal circuit is located on the annular light blocking layer and completely surrounds the epitaxial structure.

[0021] In a preferred embodiment, there is a gap between the edges of the epitaxial structure and the annular metal circuit, and the size of the gap is controlled to be 0.5-10 um.

[0022] In a preferred solution, the annular metal circuit and the annular light blocking layer overlap, and the overlap size between the two is controlled to be 0.5-10 um.

[0023] In a preferred solution, an insulating barrier layer is inserted between the side wall of the epitaxial structure and the annular metal circuit, and the insulating barrier layer completely surrounds and covers the side wall of the epitaxial structure.

[0024] In a preferred solution, the transparent supporting substrate is made of organic or inorganic material and has a thickness of 100-500 um.

[0025] In a preferred solution, the size of the light conversion layer is larger than that of the annular light blocking layer, and the two overlap each other, with the overlap size being controlled within 0.5-10 um.

[0026] In a preferred solution, the thickness of the light conversion layer is greater than the thickness of the annular light blocking layer, and the difference between the two is controlled within 0.2-5 um.

[0027] In a preferred solution, the epitaxial structure is surrounded by an annular light blocking layer, and the annular light blocking layer covers the edge of the epitaxial structure, and the two overlap each other at the edge of the epitaxial structure, and the overlap size of the two is controlled to be 0.5-10um.

[0028] In addition, the present application also proposes a method for manufacturing a light-converting full-color Micro LED chip, comprising the following steps:

[0029] S1, preparing a blue light epitaxial unit, the blue light epitaxial unit comprising a growth substrate and an epitaxial structure, wherein the epitaxial structure comprises a negative polarity layer, a quantum well light emitting layer and a positive polarity layer;

[0030] S2, etching away part of the positive polarity layer and the quantum well light-emitting layer by photolithography, etching, and stripping to expose the negative polarity layer. This step is defined as the target etching depth one;

[0031] S3, continuing to etch the upper epitaxial structure to a target etching depth of two by means of photolithography, etching, and resist stripping, wherein the target etching depth of two is less than the overall epitaxial depth;

[0032] S4, forming a transparent conductive layer on the positive polarity layer by deposition, photolithography, etching, degumming, and alloying;

[0033] S5, manufacturing an ohmic contact electrode on the transparent conductive layer and the negative polarity layer by photolithography, evaporation, and stripping;

[0034] S6, forming an insulating reflective layer on the ohmic contact electrode, the negative polarity layer, the positive polarity layer and the transparent conductive layer by deposition, photolithography, etching and degumming, wherein a window is opened in the insulating reflective layer to expose the ohmic contact electrode;

[0035] S7, making a wiring line on the insulating reflective layer, wherein the wiring line is electrically connected through the window of the insulating reflective layer and the ohmic contact electrode;

[0036] S8, forming an insulating layer on the wiring line and the insulating reflective layer by deposition, photolithography, etching, and degumming, wherein a window is opened in the insulating layer to expose the wiring line;

[0037] S9, making a bonding wire electrode on the insulating layer, the bonding wire electrode is electrically connected to the wiring line through the insulating layer window;

[0038] S10, temporarily bonding the wafer to a temporary supporting substrate by means of thermosetting bonding;

[0039] S11, removing the growth substrate by laser dissociation to expose the epitaxial structure;

[0040] S12, etching away part of the epitaxial structure by physical etching to expose the insulating reflective layer;

[0041] S13, forming an annular light blocking layer on the epitaxial structure and the insulating reflective layer by photolithography;

[0042] S14, manufacturing a light conversion layer on the epitaxial structure and the annular light blocking layer by printing;

[0043] S15, forming an insulating transparent protective layer on the light conversion layer, the epitaxial structure, and the annular light blocking layer by spin coating;

[0044] S16, manufacturing a transparent supporting substrate on the insulating transparent protective layer by spin coating, thermosetting, and bonding;

[0045] S17, removing the temporary support substrate by laser dissociation to expose the wire bonding electrode;

[0046] S18, cutting to form a single light-converting full-color Micro LED chip.

[0047] Due to the application of the above technical solution, the beneficial effects of the present application compared with the prior art are:

[0048] The present application provides a light-converting full-color Micro LED chip and a manufacturing method. By redesigning the Micro LED chip and the corresponding structural layout, and providing the corresponding manufacturing process and method, it has effectively solved the problem of light crosstalk in the existing technology and the color conversion. Through the design of the package, the quality of the excitation light of the color conversion layer is effectively improved to prevent the occurrence of light crosstalk, which greatly improves the reliability of the product, improves the production efficiency, meets the production needs of the enterprise, and enhances the competitiveness of the enterprise. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0050] Figure 1 This is a schematic structural diagram of a light-converting full-color Micro LED chip according to Embodiment 1 of the present invention;

[0051] Figure 2 This is a schematic structural diagram of a light-converting full-color Micro LED chip according to the second embodiment of the present invention;

[0052] Figure 3 A schematic diagram of the structure of a light-converting full-color Micro LED chip according to the third embodiment of the present invention

[0053] Figure 4 This is a flow chart of a method for manufacturing a light-converting full-color Micro LED chip according to the present invention;

[0054] Figure 5 Schematic diagram of the chip structure in step S1 of the manufacturing method of embodiment 4 of the present invention;

[0055] Figure 6 Schematic diagram of the chip structure in step S2 of the manufacturing method of embodiment 4 of the present invention;

[0056] Figure 7 Schematic diagram of the chip structure in step S3 of the manufacturing method of embodiment 4 of the present invention;

[0057] Figure 8 Schematic diagram of the chip structure in step S4 of the manufacturing method of embodiment 4 of the present invention;

[0058] Fig. 9 Schematic diagram of the chip structure in step S5 of the manufacturing method of embodiment 4 of the present invention;

[0059] Fig.10 Schematic diagram of the chip structure in step S6 of the manufacturing method of embodiment 4 of the present invention;

[0060] Fig.11 Schematic diagram of the chip structure in step S7 of the manufacturing method of embodiment 4 of the present invention;

[0061] Fig.12 Schematic diagram of the chip structure in step S8 of the manufacturing method of embodiment 4 of the present invention;

[0062] Fig.13 Schematic diagram of the chip structure in step S9 of the manufacturing method of embodiment 4 of the present invention;

[0063] Fig.14 Schematic diagram of the chip structure in step S10 in the manufacturing method of embodiment 4 of the present invention;

[0064] Fig.15 Schematic diagram of the chip structure in step S11 of the manufacturing method of embodiment 4 of the present invention;

[0065] Fig.16 Schematic diagram of the chip structure in step S12 of the manufacturing method of the fourth embodiment of the present invention;

[0066] Fig.17 Schematic diagram of the chip structure in step S13 of the manufacturing method of the fourth embodiment of the present invention;

[0067] Fig.18 Schematic diagram of the chip structure in step S14 of the manufacturing method of the fourth embodiment of the present invention;

[0068] Fig.19 Schematic diagram of the chip structure in step S15 of the manufacturing method of the fourth embodiment of the present invention;

[0069] Fig. 20 Schematic diagram of the chip structure in step S16 of the manufacturing method of the fourth embodiment of the present invention;

[0070] Fig.21 Schematic diagram of the chip structure in step S17 of the manufacturing method of the fourth embodiment of the present invention;

[0071] Fig. 22 Schematic diagram of the chip structure in step S18 in the manufacturing method of embodiment 4 of the present invention;

[0072] Among them, 1. Growth substrate; 2. Epitaxial structure; 3. Transparent conductive layer; 4. Ohmic contact electrode; 5. Annular metal circuit; 6. Insulating reflective layer; 7. Wiring circuit; 8. Insulating layer; 9. Welding wire electrode; 10. Temporary supporting substrate; 11. Wafer; 12. Annular light blocking layer; 13. Light conversion layer; 14. Transparent insulating protective layer; 15. Transparent adhesion layer; 16. Transparent supporting substrate; 17. Insulating barrier layer. DETAILED DESCRIPTION

[0073] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0074] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0075] In the present application, the terms "upper", "lower", "left", "right", "front", "back", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings. These terms are mainly used to better describe the present invention and its embodiments, and are not used to limit the indicated devices, elements or components to have a specific orientation, or to be constructed and operated in a specific orientation.

[0076] In addition, some of the above terms may be used to express other meanings in addition to indicating orientation or positional relationship. For example, the term "on" may also be used to express a certain dependency or connection relationship in some cases. For those skilled in the art, the specific meanings of these terms in the present invention can be understood according to specific circumstances.

[0077] In addition, the terms "installed", "set", "provided with", "connected", "connected", and "socketed" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, elements, or components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0078] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0079] Embodiment 1

[0080] See also Figure 1 , the present application provides a light-converting full-color Micro LED chip, including:

[0081] A light-converting full-color Micro LED chip, comprising:

[0082] Transparent support substrate 16; the transparent support substrate 16 is made of organic or inorganic materials, inorganic materials such as sapphire, quartz glass, etc., organic materials such as PI, PET, PEEK, BCB, PPA, etc., with a thickness of 100-500um, preferably 120-300um, and more preferably 150-200um;

[0083] A transparent adhesive layer 15 is disposed on the transparent support substrate 16; the transparent adhesive layer 15 is an organic material, such as PI, epoxy resin, silicone, etc., with a thickness of 1-10 um, preferably 2-8 um, and more preferably 3-5 um;

[0084] A transparent insulating protective layer 14 is disposed on the transparent adhesive layer 15; the transparent insulating protective layer 14 is made of an organic material, such as PI, epoxy resin, silicone, etc., and has a thickness of 5-30 um, preferably 8-25 um, and more preferably 10-20 um;

[0085] The transparent insulating protective layer 14 has a light conversion layer 13 and an annular light blocking layer 12 disposed therein, and the light conversion layer 13 is completely surrounded by the annular light blocking layer 12;

[0086] The light conversion layer 13 converts the received light into different colors. For example, the epitaxial structure 2 emits blue light. Here, the light conversion layer 13 may include a green light conversion layer 13 and a red light conversion layer 13. The red light conversion layer 13 converts the received blue light into red light, and the green light conversion layer 13 converts the received blue light into green light.

[0087] When the light conversion layer 13 is a red light conversion layer 13, its material may be a phosphor or a quantum dot, and the material may be a nitride phosphor / quantum dot composed of MAlSiNx:Re (1≤x≤5) or a phosphor / quantum dot having a composition of MD:Re, where M is at least one selected from palladium Ba, strontium Sr, and calcium Ca, D is at least one selected from sulfur S, selenium Se, and tellurium Te, and Re is at least one selected from europium Eu, yttrium Y, lanthanum La, cerium Ce, neodymium Nd, promethium Pm, and samarium Sm;

[0088] When the light conversion film is a green light conversion film, its material may be a phosphor or a quantum dot, and the material may be a silicate phosphor / quantum dot composed of M2SiO4:Re or a phosphor / quantum dot composed of MA2D4:Re, M is at least one selected from palladium Ba, strontium Sr, and calcium Ca, A is at least one selected from calcium Ca, aluminum Al, and indium In, D is at least one selected from sulfur S, selenium Se, and tellurium Te, and Re is at least one selected from europium Eu, yttrium Y, lanthanum La, cerium Ce, neodymium Nd, promethium Pm, and samarium Sm;

[0089] To achieve full color, two methods are used here, one is blue light chip + green light chip + blue light chip to excite the red light conversion layer 13, and the other is blue light chip + blue light chip to excite the green light color conversion layer + blue light chip to excite the red light color conversion layer;

[0090] The annular light blocking layer 12 blocks or prevents light leakage of different colors emitted by the epitaxial structure 2 or the light conversion layer 13, and prevents light of different colors from crosstalking each other. It can be a black light-absorbing material or a reflective material. If it is a light-absorbing material, it is mainly carbon black, Fe3O4, etc. doped in organic matter. If it is a reflective material, it is mainly a DBR film material with a high refractive index and a low refractive index.

[0091] In order to prevent light crosstalk and light leakage, the light conversion layer 13 is required to be completely surrounded by the annular light blocking layer 12, and the size of the light conversion layer 13 is slightly larger than the size of the annular light blocking layer 12, and there is an overlap between the two, and the overlap size of the two is 0.5-10um, preferably 1-8um, and more preferably 2-4um;

[0092] In order to prevent light crosstalk and light leakage, in the overlapping area, the thickness of the light conversion layer 13 is slightly greater than the thickness of the annular light blocking layer 12, and the difference between the two is controlled at 0.2-5um, preferably controlled at 1-4um, and more preferably controlled at 2-3um;

[0093] An epitaxial structure 2 is disposed on the transparent insulating protective layer 14, the light conversion layer 13, and the annular light blocking layer 12; the epitaxial structure 2 includes a negative polarity layer, a quantum well light emitting layer, and a positive polarity layer;

[0094] In order to prevent light crosstalk and light leakage, the epitaxial structure 2 is required to be completely surrounded by the annular light blocking layer 12, and the annular light blocking layer 12 covers the edge of the epitaxial structure 2. The two overlap each other at the edge of the blue light epitaxial structure 2, and the overlap size of the two is controlled to be 0.5-10um, preferably controlled to be 1-8um, and more preferably controlled to be 2-4um;

[0095] In order to prevent light crosstalk and light leakage, a sandwich structure is formed between the edge of the epitaxial structure 2, the edge of the light conversion layer 13, and the annular light blocking layer 12, that is, the annular light blocking layer 12 is sandwiched between the epitaxial structure 2 and the light conversion layer;

[0096] A transparent conductive layer 3 is disposed on the epitaxial structure 2; the transparent conductive layer 3 is ITO with a thickness of 30-200 nm;

[0097] An ohmic contact electrode 4 is provided on the epitaxial structure 2 and the transparent conductive layer 3; the ohmic contact is a metal laminate material, the bottom layer is an ohmic contact adhesion layer, which can be a metal material such as Ni, Cr, etc., the middle layer is a buffer layer, which can be a metal material such as Al, Au, etc., and the top layer is an etched contact layer, which can be a metal material such as Ti, Pt, Ni, Cr, etc., a part of which contacts the negative polarity layer of the epitaxial structure 2, and the other part contacts the transparent conductive layer 3, thereby realizing electrical connection between the two;

[0098] An insulating reflective layer 6 is disposed on the ohmic contact electrode 4, the transparent conductive layer 3, the annular light blocking layer 12, and the epitaxial structure 2, and a through hole is disposed on the insulating reflective layer 6, which penetrates from the top thereof to the surface of the ohmic contact electrode 4; the insulating reflective layer 6 is a DBR film material with a high refractive index and a low refractive index, with a thickness of 1-7um, preferably 2-5um, and more preferably 3-4um, and the low refractive material is SiO, MgF, etc., and the high refractive material is HfO2, Ta2O5, etc.;

[0099] In order to prevent light crosstalk and light leakage, the insulating reflective layer 6 between different parts of the epitaxial structure 2 is required to be completely covered by the annular light blocking layer 12, that is, the size of the annular light blocking layer 12 is larger than the gap between different parts of the blue light epitaxial structure 2;

[0100] The through hole of the insulating reflective layer 6 is required to penetrate from the top to the surface of the ohmic contact electrode 4, and its shape can be circular, elliptical, square, diamond, etc.; its bottom surface size is required to be smaller than the size of the corresponding ohmic contact electrode 4, and the width is between 1-8um, preferably 2-6um, more preferably 3-5um, and its aperture size is required to gradually increase from the bottom surface to the top surface;

[0101] A wiring line 7 is provided on the insulating reflective layer 6, and the wiring line 7 is interconnected with the ohmic contact electrode 4 through the through hole of the insulating reflective layer 6 to achieve electrical connection; the wiring line 7 is a layered metal material, and the bottom layer and the top layer are both metal bonding materials such as Ti, Ni, Cr, etc., and are interconnected with the ohmic contact electrode 4 through the through hole of the insulating reflective layer 6;

[0102] An insulating layer 8 is provided on the wiring line 7 and the insulating reflective layer 6, and a through hole is provided on the insulating layer 8, which penetrates from the top thereof to the surface of the wiring line 7; the insulating layer 8 is required to have good insulating properties, and it can be an organic insulating material or an inorganic insulating material, such as PI, PET, BCB, SiO2, etc.; the through hole of the insulating layer 8 is required to penetrate from the top surface of the insulating layer 8 to the surface of the wiring line 7, and its shape can be circular, elliptical, square, diamond, etc.; its bottom surface size is required to be smaller than the size of the corresponding wiring line 7, and the width is between 1-8um, preferably 2-6um, more preferably 3-5um, and its aperture size is required to gradually increase from the bottom surface to the top surface;

[0103] A welding wire electrode 9 is provided on the insulating layer 8, and the welding wire electrode 9 is interconnected with the wiring line 7 through the through hole of the insulating layer 8 to achieve electrical connection; the welding wire electrode 9 is a layered metal material, the bottom layer of which is a metal bonding material such as Ti, Ni, Cr, and the top layer is a welding material of Au, Sn or its alloy, which is interconnected with the wiring line 7 through the through hole of the insulating layer 8.

[0104] Embodiment 2

[0105] See also Figure 2 In order to further reduce optical crosstalk and light leakage, a ring-shaped metal circuit 5 is provided inside the insulating reflective layer 6. Here, the ring-shaped metal circuit 5 further blocks or prevents light leakage for the light of different colors emitted by the epitaxial structure 2 or the light conversion layer 13. The ring-shaped metal circuit 5 is a metal laminated material, the bottom layer is an adhesion layer, which can be a metal material such as Ni, Cr, etc., the middle layer is a buffer layer, which can be a metal material such as Al, Au, etc., and the top layer is an etched contact layer, which can be a metal material such as Ti, Pt, Ni, Cr, etc.;

[0106] In order to prevent light crosstalk and light leakage, the epitaxial structure 2 is required to be completely surrounded by the annular metal circuit 5, and there is a gap between the two at the edge. The gap size is controlled at 0.5-10um, preferably controlled at 1-8um, and more preferably controlled at 2-4um.

[0107] Embodiment 3

[0108] See also Figure 3 In order to further reduce optical crosstalk and light leakage, an insulating barrier layer 17 is inserted between the side wall of the epitaxial structure 2 and the annular metal circuit 5. The insulating barrier layer 17 completely surrounds and covers the side wall of the epitaxial structure 2 to prevent the annular metal circuit 5 from contacting the side wall of the epitaxial structure 2, the top transparent conductive layer 3 and the positive polarity layer. The material of the insulating barrier layer 17 is an inorganic insulating material, such as SiO2, Si3N4, MgF, etc.

[0109] Embodiment 4

[0110] Please refer to FIG. 4-13 . In addition, the present application also proposes a method for manufacturing a light-converting full-color Micro LED chip, comprising the following steps:

[0111] S1, prepare a blue light epitaxial unit, the blue light epitaxial unit includes a growth substrate 1 and an epitaxial structure 2, wherein the epitaxial structure 2 includes a negative polarity layer, a quantum well light emitting layer and a positive polarity layer, such as Figure 5 As shown;

[0112] S2, by means of photolithography, etching, and stripping, part of the positive polarity layer and the quantum well light-emitting layer are etched away to expose the negative polarity layer. This step is defined as the target etching depth 1, such as Figure 6 As shown;

[0113] S3, by means of photolithography, etching, and stripping, the upper epitaxial structure 2 is further etched to a target etching depth of 2, wherein the target etching depth of 2 is less than the overall epitaxial depth, such as Figure 7 As shown;

[0114] S4, a transparent conductive layer 3 is formed on the positive polarity layer by deposition, photolithography, etching, degumming, and alloying. Figure 8 As shown;

[0115] S5, by means of photolithography, evaporation, and stripping, an ohmic contact electrode 4 is formed on the transparent conductive layer 3 and the negative polarity layer. Fig. 9 As shown;

[0116] S6, by deposition, photolithography, etching, and degumming, an insulating reflective layer 6 is formed on the ohmic contact electrode 4, the negative polarity layer, the positive polarity layer, and the transparent conductive layer 3, and a window is opened in the insulating reflective layer 6 to expose the ohmic contact electrode 4, such as Fig.10 As shown;

[0117] S7, fabricating a wiring line 7 on the insulating reflective layer 6, wherein the wiring line 7 is electrically connected to the ohmic contact electrode 4 through the window of the insulating reflective layer 6, such as Fig.11 As shown;

[0118] S8, by deposition, photolithography, etching, and degumming, an insulating layer 8 is formed on the wiring line 7 and the insulating reflective layer 6, and a window is opened in the insulating layer 8 to expose the wiring line 7, such as Fig.12 As shown;

[0119] S9, making a bonding wire electrode 9 on the insulating layer 8, the bonding wire electrode 9 is electrically connected to the wiring line 7 through the window of the insulating layer 8, such as Fig.13 As shown;

[0120] S10, temporarily bonding the wafer 11 to the temporary supporting substrate 10 by means of thermosetting bonding, such as Fig.14 As shown;

[0121] S11, removing the growth substrate 1 by laser dissociation to expose the epitaxial structure 2, such as Fig.15 As shown;

[0122] S12, etching away part of the epitaxial structure 2 by physical etching to expose the insulating reflective layer 6, such as Fig.16 As shown;

[0123] S13, by photolithography, a ring-shaped light blocking layer 12 is formed on the epitaxial structure 2 and the insulating reflective layer 6, such as Fig.17 As shown;

[0124] S14, by printing, a light conversion layer 13 is formed on the epitaxial structure 2 and the annular light blocking layer 12, such as Fig.18 As shown;

[0125] S15, by spin coating, an insulating transparent protective layer is formed on the light conversion layer 13, the epitaxial structure 2, and the annular light blocking layer 12, such as Fig.19 As shown;

[0126] S16, a transparent support substrate 16 is formed on the insulating transparent protective layer by spin coating, thermal curing, and bonding. Fig. 20 As shown;

[0127] S17, removing the temporary support substrate 10 by laser dissociation to expose the wire electrode 9, such as Fig.21 As shown;

[0128] S18, cutting to form a single light-converting full-color Micro LED chip, such as Fig. 22 shown.

[0129] The present application provides a light-converting full-color Micro LED chip and a manufacturing method. By redesigning the Micro LED chip and the corresponding structural layout, and providing the corresponding manufacturing process and method, it has well solved the existing technology and the light crosstalk problem in color conversion. Through the design of the package, the quality of the excitation light of the color conversion layer 13 is effectively improved to prevent the occurrence of light crosstalk, which greatly improves the reliability of the product, improves the production efficiency, meets the production needs of the enterprise, and enhances the competitiveness of the enterprise.

[0130] Finally, it should be noted that the above are only preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A light-converting full-color Micro LED chip, characterized in that: include: a transparent supporting substrate; A transparent adhesive layer is provided on the transparent supporting substrate; A transparent insulating protective layer is provided on the transparent adhesive layer; A light conversion layer and an annular light blocking layer are arranged inside the transparent insulating protective layer, and the light conversion layer is completely surrounded by the annular light blocking layer; An epitaxial structure is disposed on the transparent insulating protective layer, the light conversion layer, and the annular light blocking layer; A transparent conductive layer is disposed on the epitaxial structure; An ohmic contact electrode is provided on the epitaxial structure and the transparent conductive layer; An insulating reflective layer is disposed above the ohmic contact electrode, the transparent conductive layer, the annular light blocking layer, and the epitaxial structure, and the insulating reflective layer is provided with a through hole penetrating from the top thereof to the surface of the ohmic contact electrode; A wiring circuit is provided on the insulating reflective layer, and the wiring circuit is interconnected through the through hole of the insulating reflective layer and the ohmic contact electrode to achieve electrical connection; An insulating layer is provided on the wiring line and the insulating reflective layer, and the insulating layer is provided with a through hole penetrating from the top to the surface of the wiring line; A welding wire electrode is arranged on the insulating layer, and the welding wire electrode is interconnected with the wiring line through the through hole of the insulating layer to achieve electrical connection.

2. The light-converting full-color Micro LED chip according to claim 1, characterized in that: An annular metal circuit is arranged inside the insulating reflective layer; the annular metal circuit is located on the annular light blocking layer and completely surrounds the epitaxial structure.

3. The light-converting full-color Micro LED chip according to claim 2, wherein: There is a gap at the edges of the epitaxial structure and the annular metal circuit, and the size of the gap is controlled to be 0.5-10um.

4. The light-converting full-color Micro LED chip according to claim 2, wherein: The annular metal circuit and the annular light blocking layer overlap, and the overlapping size of the two is controlled within 0.5-10um.

5. The light-converting full-color Micro LED chip according to claim 2, wherein: An insulating barrier layer is inserted between the side wall of the epitaxial structure and the annular metal line, and the insulating barrier layer completely surrounds and covers the side wall of the epitaxial structure.

6. The light-converting full-color Micro LED chip according to claim 1, wherein: The transparent support substrate is made of organic or inorganic material and has a thickness of 100-500um.

7. The light-converting full-color Micro LED chip according to claim 1, wherein: The size of the light conversion layer is larger than that of the annular light blocking layer, and the two overlap each other, with the overlap size being controlled within 0.5-10 um.

8. The light-converting full-color Micro LED chip according to claim 7, wherein: The thickness of the light conversion layer is greater than that of the annular light blocking layer, and the difference between the two is controlled within 0.2-5 um.

9. The light-converting full-color Micro LED chip according to claim 1, wherein: The epitaxial structure is surrounded by an annular light blocking layer, and the annular light blocking layer covers the edge of the epitaxial structure. The two overlap each other at the edge of the epitaxial structure, and the overlapping size of the two is controlled to be 0.5-10um.

10. A method for manufacturing a light-converting full-color Micro LED chip, characterized in that: The steps include: S1, preparing a blue light epitaxial unit, the blue light epitaxial unit comprising a growth substrate and an epitaxial structure, wherein the epitaxial structure comprises a negative polarity layer, a quantum well light emitting layer and a positive polarity layer; S2, etching away part of the positive polarity layer and the quantum well light-emitting layer by photolithography, etching, and stripping to expose the negative polarity layer. This step is defined as the target etching depth one; S3, continuing to etch the upper epitaxial structure to a target etching depth of two by means of photolithography, etching, and resist stripping, wherein the target etching depth of two is less than the overall epitaxial depth; S4, forming a transparent conductive layer on the positive polarity layer by deposition, photolithography, etching, degumming, and alloying; S5, manufacturing an ohmic contact electrode on the transparent conductive layer and the negative polarity layer by photolithography, evaporation, and stripping; S6, forming an insulating reflective layer on the ohmic contact electrode, the negative polarity layer, the positive polarity layer and the transparent conductive layer by deposition, photolithography, etching and degumming, wherein a window is opened in the insulating reflective layer to expose the ohmic contact electrode; S7, making a wiring line on the insulating reflective layer, wherein the wiring line is electrically connected through the window of the insulating reflective layer and the ohmic contact electrode; S8, forming an insulating layer on the wiring line and the insulating reflective layer by deposition, photolithography, etching, and degumming, wherein a window is opened in the insulating layer to expose the wiring line; S9, making a bonding wire electrode on the insulating layer, the bonding wire electrode is electrically connected to the wiring line through the insulating layer window; S10, temporarily bonding the wafer to a temporary supporting substrate by means of thermosetting bonding; S11, removing the growth substrate by laser dissociation to expose the epitaxial structure; S12, etching away part of the epitaxial structure by physical etching to expose the insulating reflective layer; S13, forming an annular light blocking layer on the epitaxial structure and the insulating reflective layer by photolithography; S14, manufacturing a light conversion layer on the epitaxial structure and the annular light blocking layer by printing; S15, forming an insulating transparent protective layer on the light conversion layer, the epitaxial structure, and the annular light blocking layer by spin coating; S16, manufacturing a transparent supporting substrate on the insulating transparent protective layer by spin coating, thermosetting, and bonding; S17, removing the temporary support substrate by laser dissociation to expose the wire bonding electrode; S18, cutting to form a single light-converting full-color Micro LED chip.

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