Luminous screen body

Abstract

The invention discloses a light-emitting screen body which comprises a substrate which comprises a light-emitting area and a non-light-emitting area located on at least one side of the light-emitting area. Wherein the non-luminous area comprises an electrode lead area; the light-emitting device layer is located in the light-emitting area of the substrate; the plurality of first electrode leads are positioned in the electrode lead area of the substrate and are electrically connected with the light-emitting device layer; the electrode lead area further comprises a first Zener diode electrically connected with the multiple first electrode leads. The first Zener diode comprises an N-type doped layer and a P-type doped layer which are stacked; the N-type doped layer and the P-type doped layer extend along the arrangement direction of the plurality of first electrode leads. According to the technical scheme, the reliability of the device is improved, and the service life of the screen body is prolonged.

Description

Technical Field

[0001] The embodiments of the present invention relate to the technical field of light-emitting devices, and in particular to a light-emitting screen. Background Art

[0002] Organic Light-Emitting Diode (OLED) can be used in lighting and display technology, and has excellent characteristics such as self-luminescence, low power consumption, fast response speed, high luminous efficiency and simple process.

[0003] At present, OLED screens are prone to black spots and bright spots during production and use. One of the important reasons is static electricity. Static charges are adsorbed on the surface of the product and reach the inside of the screen through electrode wires or human contact, acting on the device structure, causing black spots or bright spots, reducing device reliability and screen life. Therefore, how to improve device reliability and screen life has become a technical problem that needs to be solved urgently. Summary of the invention

[0004] The embodiment of the present invention provides a light-emitting screen to improve the reliability of the device and the life of the screen.

[0005] According to one aspect of the present invention, there is provided a light-emitting screen, comprising:

[0006] A substrate, comprising a light-emitting area and a non-light-emitting area located at at least one side of the light-emitting area; wherein the non-light-emitting area comprises an electrode lead area;

[0007] A light-emitting device layer, located in the light-emitting area of ​​the substrate;

[0008] A plurality of first electrode leads, located in an electrode lead region of the substrate and electrically connected to the light emitting device layer;

[0009] Among them, the electrode lead area also includes a first Zener diode electrically connected to the multiple first electrode leads; the first Zener diode includes a stacked N-type doped layer and a P-type doped layer; the N-type doped layer and the P-type doped layer are both extended along the arrangement direction of the multiple first electrode leads.

[0010] Optionally, the N-type doped layer and the P-type doped layer in the first Zener diode are located on a side of the first electrode lead away from the substrate;

[0011] Alternatively, the N-type doped layer and the P-type doped layer in the first Zener diode are located on a side of the first electrode lead close to the substrate.

[0012] Optionally, the N-type doped layer is located on a side of the P-type doped layer close to the first electrode lead; a surface of the N-type doped layer close to the first electrode lead contacts with a plurality of first electrode leads, and a surface of the P-type doped layer away from the first electrode lead contacts with an electrode layer located in the electrode lead region;

[0013] Alternatively, the N-type doped layer is located on a side of the P-type doped layer away from the first electrode lead, a surface of the P-type doped layer close to the first electrode lead contacts multiple first electrode leads, and a surface of the N-type doped layer away from the first electrode lead contacts an electrode layer located in the electrode lead area.

[0014] Optionally, the light emitting device layer includes:

[0015] A first electrode layer is located on one side of the substrate; the first electrode layer includes a plurality of first electrodes, each of which is electrically connected to an electrode lead;

[0016] a light-emitting layer, located on a side of the first electrode layer away from the substrate;

[0017] A second electrode layer is located on a side of the light-emitting layer away from the substrate and extends from the light-emitting area to the electrode lead area;

[0018] Wherein, in the case where the N-type doped layer is located on a side of the P-type doped layer close to the substrate, a surface of the N-type doped layer close to the substrate contacts the first electrode lead, and a surface of the P-type doped layer away from the substrate contacts the second electrode layer;

[0019] When the N-type doped layer is located on the side of the P-type doped layer away from the substrate, the surface of the N-type doped layer away from the substrate contacts the second electrode layer, and the surface of the P-type doped layer close to the substrate contacts the first electrode lead.

[0020] Optionally, in the electrode lead area, an insulating layer is included between the first electrode lead and the second electrode layer; a vertical projection of the insulating layer on the substrate does not overlap with a vertical projection of the N-type doped layer and the P-type doped layer on the substrate.

[0021] Optionally, the insulating layer includes at least one opening, and the N-type doped layer and the P-type doped layer are located in the opening of the insulating layer;

[0022] And / or, a distance between the insulating layer and a frame of the substrate is greater than zero; and the N-type doped layer and the P-type doped layer are located in a region between the insulating layer and the frame.

[0023] Optionally, the first electrode is surrounded by auxiliary electrode strips, and an auxiliary electrode grid is arranged inside the first electrode;

[0024] The light emitting area further comprises at least one second Zener diode, wherein the second Zener diode comprises an N-type doping layer and a P-type doping layer stacked;

[0025] The second Zener diode is arranged on a surface of the auxiliary electrode strip away from the substrate, and / or the second Zener diode is arranged on a surface of the auxiliary electrode grid away from the substrate.

[0026] Optionally, the light-emitting screen further comprises at least one third Zener diode electrically connected to the first electrode lead; the third Zener diode is located between two adjacent first electrode leads, or the third Zener diode is located on a side of the first electrode lead away from the substrate;

[0027] Wherein, the third Zener diode includes a P-type doping layer and an N-type doping layer which are arranged horizontally side by side.

[0028] Optionally, a first functional layer is included between the first electrode layer and the light-emitting layer, and a second functional layer is included between the second electrode layer and the light-emitting layer; wherein the P-type doped layer is made of the same material as the first functional layer, and the N-type doped layer is made of the same material as the second functional layer; or, the P-type doped layer is made of the same material as the second functional layer, and the N-type doped layer is made of the same material as the first functional layer;

[0029] Alternatively, at least two light-emitting layers are included between the first electrode layer and the second electrode layer; a charge generating layer is arranged between two adjacent light-emitting layers; the charge generating layer includes a stacked P-type charge layer and an N-type charge layer; the material of the P-type doped layer is the same as that of the P-type charge layer, and the thickness is the same; the material of the N-type doped layer is the same as that of the N-type charge layer, and the thickness is the same.

[0030] Optionally, the N-type doping layer is doped with N-type impurities, and the P-type doping layer is doped with P-type impurities; wherein the N-type impurities include metal ions;

[0031] And / or, an intermediate layer is further included between the N-type doped layer and the P-type doped layer; the intermediate layer is an undoped layer, or the intermediate layer is a P-type intermediate layer with a doping concentration lower than that of the P-type doped layer, or the intermediate layer is an N-type intermediate layer with a doping concentration lower than that of the N-type doped layer;

[0032] And / or, the light-emitting screen includes the first Zener diode, the second Zener diode and the third Zener diode; the Zener breakdown voltage of at least one of the first Zener diode, the second Zener diode and the third Zener diode is greater than or equal to 2 times the rated voltage of the light-emitting device in the light-emitting device layer.

[0033] An embodiment of the present invention provides a light-emitting screen, comprising: a substrate, comprising a light-emitting area and a non-light-emitting area located on at least one side of the light-emitting area; wherein the non-light-emitting area includes an electrode lead area; a light-emitting device layer, located in the light-emitting area of ​​the substrate; a plurality of first electrode leads, located in the electrode lead area of ​​the substrate, and electrically connected to the light-emitting device layer; wherein the electrode lead area also includes a first Zener diode electrically connected to the plurality of first electrode leads; the first Zener diode includes a stacked N-type doped layer and a P-type doped layer; the N-type doped layer and the P-type doped layer are both extended along the arrangement direction of the plurality of first electrode leads. The technical solution provided by the embodiment of the present invention is to set the N-type doping layer and the P-type doping layer of the first Zener diode to extend along the arrangement direction of the multiple first electrode leads, so that the first Zener diode can be electrically connected to the multiple first electrode leads at the same time. When the electrostatic discharge exceeds the Zener breakdown voltage of the Zener diode, the Zener diode will be turned on, thereby releasing the charge, protecting the light-emitting device in the light-emitting area, and improving the reliability of the light-emitting device and the screen life; moreover, by setting the N-type doping layer and the P-type doping layer of the first Zener diode to extend along the arrangement direction of the multiple first electrode leads, the accuracy requirements of the mask used in preparing the first Zener diode can also be reduced, thereby reducing the difficulty of preparing the first Zener diode; in addition, by adjusting the doping concentration of each doping layer, the Zener breakdown voltage of the Zener diode can be controlled to be greater than or equal to twice the normal working voltage of the light-emitting device, so that when the electrostatic charge is released, the Zener diode can protect the light-emitting device, and when the amount of electrostatic charge is small, the Zener diode is prevented from being turned on and affecting the normal operation of the light-emitting device.

[0034] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0036] Figure 1 It is a structural schematic diagram of a light-emitting screen provided by an embodiment of the present invention;

[0037] Figure 2 yes Figure 1 The structure shown is a schematic cross-sectional view along the section line AA1;

[0038] Figure 3 is a schematic cross-sectional structure diagram of a partial structure of a first Zener diode provided by an embodiment of the present invention;

[0039] Figure 4 is a schematic cross-sectional structure diagram of a partial structure of another first Zener diode provided by an embodiment of the present invention;

[0040] Figure 5 is a schematic cross-sectional structure diagram of a partial structure of another first Zener diode provided by an embodiment of the present invention;

[0041] Figure 6 is a schematic cross-sectional structure diagram of a partial structure of another first Zener diode provided by an embodiment of the present invention;

[0042] Figure 7 is a voltage-current curve diagram of a Zener diode provided by an embodiment of the present invention;

[0043] Figure 8 is a schematic structural diagram of another light-emitting screen provided by an embodiment of the present invention;

[0044] Fig. 9 is a schematic structural diagram of another light-emitting screen provided by an embodiment of the present invention;

[0045] Fig.10 is a schematic cross-sectional structure diagram of a second Zener diode provided by an embodiment of the present invention;

[0046] Fig.11 is a schematic cross-sectional structure diagram of another second Zener diode provided by an embodiment of the present invention;

[0047] Fig.12 is a schematic cross-sectional structure diagram of a third Zener diode provided by an embodiment of the present invention;

[0048] Fig.13 is a schematic cross-sectional structure diagram of a light-emitting device layer provided by an embodiment of the present invention;

[0049] Fig.14 It is a schematic diagram of the cross-sectional structure of another light-emitting device layer provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0050] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0051] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0052] The embodiment of the present invention provides a light-emitting screen. Figure 1 is a schematic structural diagram of a light-emitting screen provided by an embodiment of the present invention, Figure 2 yes Figure 1 The schematic diagram of the cross-sectional structure of the structure shown along the section line AA1, refer to Figure 1 and Figure 2 ,include:

[0053] The substrate 10 includes a light-emitting region Q1 and a non-light-emitting region located at least on one side of the light-emitting region Q1; wherein the non-light-emitting region includes an electrode lead region Q2;

[0054] A light emitting device layer, located in the light emitting area Q1 of the substrate 10;

[0055] A plurality of first electrode leads 20, located in the electrode lead region Q2 of the substrate 10 and electrically connected to the light emitting device layer;

[0056] Among them, the electrode lead area Q2 also includes a first Zener diode 1 electrically connected to multiple first electrode leads 20; the first Zener diode 1 includes a stacked N-type doped layer 31N and a P-type doped layer 31P; the N-type doped layer 31N and the P-type doped layer 31P are both extended along the arrangement direction of the multiple first electrode leads 20.

[0057] Specifically, the substrate 10 may be a flexible substrate, and the material of the flexible substrate is an organic polymer such as PET, PEN, PI, or ultra-thin glass. The substrate 10 may also be a rigid substrate, such as a glass substrate. The substrate 10 may be transparent, translucent, or opaque. The substrate 10 includes a light-emitting area Q1 and a non-light-emitting area, the light-emitting area Q1 includes a plurality of light-emitting sub-areas Q11, and the non-light-emitting area includes an electrode lead area Q2; the electrode lead area Q2 has a plurality of first electrode leads 20, one end of each first electrode lead 20 is connected to the light-emitting device layer in at least one light-emitting sub-area Q11, and the other end of the first electrode lead 20 is connected to the driving module 01 of the light-emitting screen.

[0058] The light-emitting device layer includes a first electrode layer, a second electrode layer 40, and a light-emitting layer located between the first electrode layer and the second electrode layer 40. The first electrode layer is located on one side of the substrate 10, and the first electrode layer includes a plurality of first electrodes, each of which is electrically connected to a first electrode lead 20. The light-emitting layer is located on the side of the first electrode layer away from the substrate 10; the second electrode layer 40 is located on the side of the light-emitting layer away from the substrate 10, and extends from the light-emitting region Q1 to the electrode lead region Q2. Each light-emitting sub-region Q11 may include one first electrode or a plurality of first electrodes, and the first electrodes located in the same light-emitting sub-region Q11 are electrically connected to the same first electrode lead 20. Each first electrode and the light-emitting layer and the second electrode layer 40 above each first electrode constitute a light-emitting device.

[0059] The first electrode (as the anode of the light-emitting device) can be formed as a transparent electrode or a reflective electrode according to its purpose. In an embodiment of the present invention, the first electrode is formed as a transparent electrode, and the first electrode may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) or indium oxide (In2O3), etc. The light-emitting layer can be formed of a low molecular weight organic material or a high molecular weight organic material. The second electrode (as the cathode of the light-emitting device) is located on the light-emitting layer. The second electrode layer 40 can be formed as a transparent electrode or a reflective electrode according to its purpose. In an embodiment of the present invention, the second electrode layer 40 is a reflective electrode layer, and the second electrode layer 40 can be formed of Ag, magnesium (Mg), Al, Pt, Pd, Au, Ni, Nd, iridium (Ir), Cr or a mixture thereof.

[0060] The electrode lead area Q2 of the substrate 10 is provided with a first Zener diode 1, and the first Zener diode 1 includes a stacked structure 30 composed of an N-type doped layer 31N and a P-type doped layer 31P. The material of the stacked structure 30 can be an organic material. The Zener diode is also called a voltage regulator diode, which has a voltage stabilization effect. The working principle of the Zener diode is based on the reverse Zener breakdown characteristics of the PN junction. Under normal circumstances, the PN junction formed by the N-type doped layer 31N and the P-type doped layer 31P presents a high impedance, but when the reverse voltage reaches a certain value (called the Zener voltage), the depletion layer thickness of the Zener diode PN junction is small, and the electric field strength in the depletion layer of the PN junction becomes strong enough, so that the electrons in the HOMO energy level of the P-type material can tunnel to the LUMO energy level of the N-type material, generating a large amount of current, while the voltage remains basically unchanged and is in a conducting state. When the device is normally lit, the Zener breakdown voltage of the Zener diode is designed to be twice that of the device when it is normally lit, and the two ends of the Zener diode are negatively pressurized and not conducting. Thus, the Zener diode can be used as a charge release path for static electricity without affecting the normal operation of the device. Therefore, the Zener diode can achieve voltage stabilization and current limiting functions by utilizing the reverse breakdown characteristics of the PN junction. In the embodiment of the present invention, the first Zener diode 1 plays a role in electrostatic protection. When the electrostatic discharge exceeds the Zener breakdown voltage of the first Zener diode 1, the first Zener diode 1 will be turned on, thereby releasing the charge and protecting the light-emitting device connected thereto. The N-type doped layer 31N and the P-type doped layer 31P of the first Zener diode 1 are both extended along the arrangement direction of the plurality of first electrode leads 20, so that the first Zener diode 1 covers the plurality of first electrode leads 20 and has a certain lateral conductivity, so the current when the first Zener diode 1 breaks down can be very large, which can improve the anti-static ability.

[0061] The light-emitting screen provided by the embodiment of the present invention is configured such that the N-type doped layer 31N and the P-type doped layer 31P of the first Zener diode 1 are both extended along the arrangement direction of the plurality of first electrode leads 20, so that the first Zener diode 1 can be electrically connected to the plurality of first electrode leads 20 at the same time. When the electrostatic discharge exceeds the Zener breakdown voltage of the Zener diode, the Zener diode will be turned on, thereby releasing the charge and protecting the light-emitting device in the light-emitting area Q1. Moreover, by configuring the N-type doped layer 31N and the P-type doped layer 31P of the first Zener diode 1 to be both extended along the arrangement direction of the plurality of first electrode leads 20, it is equivalent to configuring a corresponding Zener diode for each first electrode lead 20, and the accuracy requirement of the mask used in preparing the first Zener diode 1 can also be reduced, thereby reducing the difficulty of preparing the first Zener diode 1.

[0062] In addition, since the current light-emitting screen is designed with multiple light-emitting areas in order to pursue the diversity of lighting effects and the interactivity of information, the general design is to pattern the first electrode layer on the substrate, and then connect it to the electrode binding area outside the package through the first electrode lead 20. In order to increase the screen opening rate, the first electrode lead 20 is usually designed to be narrower. Such electrostatic discharge is very easy to break down, causing the screen to short-circuit or open-circuit, resulting in failure. The embodiment of the present invention prevents static electricity from breaking down the first electrode lead 20 by arranging a first Zener diode 1 connected to multiple first electrode leads 20 in the electrode lead area Q2.

[0063] Based on the above embodiments, optionally, Figure 3 is a schematic cross-sectional structure diagram of a partial structure of a first Zener diode provided by an embodiment of the present invention, Figure 4 is a schematic cross-sectional view of a partial structure of another first Zener diode provided by an embodiment of the present invention, with reference to Figure 3 and Figure 4 The N-type doped layer 31N and the P-type doped layer 31P in the first Zener diode 1 are located on a side of the first electrode lead 20 away from the substrate 10 .

[0064] or, Figure 5 is a schematic cross-sectional structure diagram of a partial structure of another first Zener diode provided by an embodiment of the present invention, Figure 6 is a schematic cross-sectional view of a partial structure of another first Zener diode provided by an embodiment of the present invention, with reference to Figure 5 and Figure 6 The N-type doping layer 31N and the P-type doping layer 31P in the first Zener diode 1 are located on a side of the first electrode lead 20 close to the substrate 10 .

[0065] Specifically, the first Zener diode 1 can be located on the side of the first electrode lead 20 away from the substrate 10, or on the side of the first electrode lead 20 close to the substrate 10. The first Zener diode 1 includes two electrode layers respectively contacting the N-type doping layer 31N and the P-type doping layer 31P in addition to the stacked N-type doping layer 31N and the P-type doping layer 31P, so as to provide voltage to the first Zener diode 1. One of the two electrode layers respectively contacting the N-type doping layer 31N and the P-type doping layer 31P is electrically connected to the first electrode lead 20, thereby realizing the electrical connection between the first Zener diode 1 and the first electrode lead 20.

[0066] Further, refer to Figure 3 to Figure 6The first electrode lead 20 can contact one of the N-type doped layer 31N and the P-type doped layer 31P, that is, the first electrode lead 20 is reused as the electrode layer of the first Zener diode 1, so that the electrical connection between the first Zener diode 1 and the first electrode lead 20 can be achieved, and the number of electrode layers can be reduced, thereby simplifying the preparation process of the light-emitting screen and reducing the cost of the light-emitting screen.

[0067] refer to Figure 3 and Figure 4 In the case where the N-type doping layer 31N and the P-type doping layer 31P in the first Zener diode 1 are located on the side of the first electrode lead 20 away from the substrate 10, the N-type doping layer 31N is located on the side of the P-type doping layer 31P close to the first electrode lead 20, that is, the N-type doping layer 31N is located on the side of the P-type doping layer 31P close to the substrate 10; the surface of the N-type doping layer 31N close to the first electrode lead 20 contacts the multiple first electrode leads 20, and the surface of the P-type doping layer 31P away from the first electrode lead 20 contacts the electrode layer located in the electrode lead area Q2. Alternatively, the N-type doped layer 31N is located on the side of the P-type doped layer 31P away from the first electrode lead 20, that is, the N-type doped layer 31N is located on the side of the P-type doped layer 31P away from the substrate 10; the surface of the P-type doped layer 31P close to the first electrode lead 20 contacts with multiple first electrode leads 20, and the surface of the N-type doped layer 31N away from the first electrode lead 20 contacts with the electrode layer located in the electrode lead area Q2.

[0068] That is, the first electrode lead 20 may contact the N-type doped layer 31N in the first Zener diode 1, or may contact the P-type doped layer 31P in the first Zener diode 1. Figure 3 ), when the light-emitting device operates under forward current and voltage, the first Zener diode 1 is under reverse bias, and the Zener breakdown voltage is higher than the normal working voltage. At this time, it is in the cut-off state, and the light-emitting device can be normally lit. When a large amount of electrostatic charge is released, a large amount of current can pass through the Zener diode without increasing the voltage too much, thereby protecting the OLED device. If the first electrode lead 20 contacts the P-type doped layer 31P (refer to Figure 4 ), when the light-emitting device operates under forward current and voltage, the first Zener diode 1 is under forward voltage. When the electrostatic charge release reaches the forward conduction voltage of the first Zener diode 1, the Zener diode is turned on, thereby releasing the electrostatic charge, which plays a role in protecting the light-emitting device.

[0069] Figure 7 is a voltage-current curve diagram of a Zener diode provided by an embodiment of the present invention, with reference to Figure 7, when the Zener diode is under reverse bias voltage, the absolute value of the conduction voltage of the Zener diode is large; when the Zener diode is under forward voltage, the absolute value of the conduction voltage of the Zener diode is small. Therefore, preferably, if the N-type doping layer 31N and the P-type doping layer 31P in the first Zener diode 1 are located on the side of the first electrode lead 20 away from the substrate 10, the N-type doping layer 31N is arranged on the side of the P-type doping layer 31P close to the substrate 10, so that the N-type doping layer 31N contacts the first electrode lead 20, and then the first Zener diode 1 is under reverse bias when the light-emitting device works under forward current and voltage, avoiding the first Zener diode 1 being under forward voltage when the light-emitting device works under forward current and voltage, resulting in the operating voltage provided to the light-emitting device not being too large, thereby affecting the light-emitting brightness of the light-emitting screen.

[0070] refer to Figure 5 and Figure 6 In the case where the N-type doping layer 31N and the P-type doping layer 31P in the first Zener diode 1 are located on the side of the first electrode lead 20 close to the substrate 10, the N-type doping layer 31N is located on the side of the P-type doping layer 31P close to the first electrode lead 20, that is, the N-type doping layer 31N is located on the side of the P-type doping layer 31P away from the substrate 10; the surface of the N-type doping layer 31N close to the first electrode lead 20 contacts the multiple first electrode leads 20, and the surface of the P-type doping layer 31P away from the first electrode lead 20 contacts the electrode layer located in the electrode lead area Q2. Alternatively, the N-type doped layer 31N is located on the side of the P-type doped layer 31P away from the first electrode lead 20, that is, the N-type doped layer 31N is located on the side of the P-type doped layer 31P close to the substrate 10; the surface of the P-type doped layer 31P close to the first electrode lead 20 contacts the multiple first electrode leads 20, and the surface of the N-type doped layer 31N away from the first electrode lead 20 contacts the electrode layer located in the electrode lead area Q2.

[0071] That is to say, the first electrode lead 20 can contact the N-type doped layer 31N in the first Zener diode 1, or can contact the P-type doped layer 31P in the first Zener diode 1. If the first electrode lead 20 contacts the N-type doped layer 31N, when the light-emitting device operates under forward current and voltage, the first Zener diode 1 is under reverse bias, and the Zener breakdown voltage is higher than the normal operating voltage. At this time, it is in a cut-off state, and the light-emitting device can be normally lit. However, when a large amount of electrostatic charge is released, a large amount of current can pass through the Zener diode without increasing the voltage too much, thereby protecting the OLED device. If the first electrode lead 20 contacts the P-type doped layer 31P, when the light-emitting device operates under forward current and voltage, the first Zener diode 1 is under forward voltage. When the electrostatic charge is released to the forward conduction voltage of the first Zener diode 1, the Zener diode is turned on, thereby releasing the electrostatic charge, which plays a protective role on the light-emitting device.

[0072] Preferably, if the N-type doping layer 31N and the P-type doping layer 31P in the first Zener diode 1 are located on the side of the first electrode lead 20 close to the substrate 10, and the N-type doping layer 31N is located on the side of the P-type doping layer 31P away from the substrate 10, the N-type doping layer 31N is in contact with the first electrode lead 20, so that when the light-emitting device operates under forward current and voltage, the first Zener diode 1 is under reverse bias, thereby avoiding the first Zener diode 1 being under forward voltage when the light-emitting device operates under forward current and voltage, resulting in the operating voltage provided to the light-emitting device being not easy to be too large, thereby affecting the luminous brightness of the light-emitting screen.

[0073] Based on the above embodiments, optionally, refer to Figure 3 In the case where the N-type doped layer 31N and the P-type doped layer 31P in the first Zener diode 1 are located on the side of the first electrode lead 20 away from the substrate 10, and the N-type doped layer 31N is located on the side of the P-type doped layer 31P close to the substrate 10, the second electrode layer 40 is located on the side of the light-emitting layer away from the substrate 10, and extends from the light-emitting area Q1 to the electrode lead area Q2, the surface of the N-type doped layer 31N close to the substrate 10 contacts the first electrode lead 20, and the surface of the P-type doped layer 31P away from the substrate 10 contacts the second electrode layer 40.

[0074] Alternatively, refer to Figure 4 In the case where the N-type doping layer 31N and the P-type doping layer 31P in the first Zener diode 1 are located on the side of the first electrode lead 20 away from the substrate 10, and the N-type doping layer 31N is located on the side of the P-type doping layer 31P away from the substrate 10, the surface of the N-type doping layer 31N away from the substrate 10 contacts the second electrode layer 40, and the surface of the P-type doping layer 31P close to the substrate 10 contacts the first electrode lead 20. That is, the second electrode layer 40 located in the electrode lead area Q2 can be reused as an electrode layer 32 of the first Zener diode 1, thereby further reducing the number of electrode layers, thereby simplifying the preparation process of the light-emitting screen body, and reducing the cost of the light-emitting screen body.

[0075] Based on the above embodiments, optionally, refer to Figure 1 In the electrode lead area Q2, an insulating layer 60 is included between the first electrode lead 20 and the second electrode layer 40; the vertical projection of the insulating layer 60 on the substrate 10 does not completely overlap with the vertical projections of the N-type doped layer 31N and the P-type doped layer 31P on the substrate 10. That is, the vertical projection of the insulating layer 60 on the substrate 10 does not overlap or partially overlaps with the vertical projections of the N-type doped layer 31N and the P-type doped layer 31P on the substrate 10.

[0076] Specifically, an insulating layer 60 is provided between the first electrode lead 20 and the second electrode layer 40 to prevent the first electrode lead 20 from contacting the second electrode layer 40 and causing a short circuit. The vertical projection of the insulating layer 60 on the substrate 10 does not completely overlap with the vertical projections of the N-type doped layer 31N and the P-type doped layer 31P in the first Zener diode on the substrate 10, so as to prevent the insulating layer 60 from hindering the contact between the N-type doped layer 31N and the P-type doped layer 31P and the first electrode lead 20 and the second electrode layer 40.

[0077] Among them, reference Figure 1 , the distance between the insulating layer 60 and the frame of the substrate 10 is greater than zero, and the N-type doped layer 31N and the P-type doped layer 31P in the first Zener diode can be located in the area between the insulating layer 60 and the frame. Wherein, the boundary L1 is the boundary of the organic material layer in the light-emitting device layer, and the boundary L2 is the boundary of the second electrode layer 40 located in the electrode lead area Q2.

[0078] Figure 8 is a schematic diagram of the structure of another light-emitting screen provided by an embodiment of the present invention, referring to Figure 8 The insulating layer 60 may include at least one opening, and the N-type doped layer 31N and the P-type doped layer 31P are located in the opening of the insulating layer 60, so that the vertical projection of the insulating layer 60 on the substrate 10 does not overlap with the vertical projection of the N-type doped layer 31N and the P-type doped layer 31P in the first Zener diode on the substrate 10.

[0079] Based on the above embodiments, optionally, Fig. 9 is a schematic diagram of the structure of another light-emitting screen provided by an embodiment of the present invention, referring to Fig. 9 The first electrode is surrounded by an auxiliary electrode strip 501, and an auxiliary electrode grid 502 is arranged inside the first electrode 501; the light-emitting area Q1 also includes at least one second Zener diode, and the second Zener diode includes a stacked N-type doped layer 31N and a P-type doped layer 31P; wherein the second Zener diode is arranged on the surface of the auxiliary electrode strip away from the substrate 10, and / or the second Zener diode is arranged on the surface of the auxiliary electrode grid away from the substrate 10.

[0080] Specifically, the first electrode is surrounded by auxiliary electrode strips 501, and an auxiliary electrode grid 502 is arranged inside the first electrode; the materials of the auxiliary electrode strips 501 and the auxiliary electrode grid 502 both include metal materials. The auxiliary electrode strips 501 and the auxiliary electrode grid 502 can improve the conductivity of the first electrode and reduce the voltage difference at different positions of the first electrode, thereby improving the uniformity of the light emission of the light-emitting screen.

[0081] The second Zener diode is arranged on the surface of the auxiliary electrode strip 501 away from the substrate 10; or, the second Zener diode is arranged on the surface of the auxiliary electrode grid 502 away from the substrate 10; or, the second Zener diode is arranged on the surface of the auxiliary electrode strip 501 away from the substrate 10, and on the surface of the auxiliary electrode grid 502 away from the substrate 10.

[0082] It can be understood that the Zener diode can also be arranged in the area with the first electrode and the second electrode outside the organic material range at the edge of the light-emitting sub-region Q11, or can be arranged on the auxiliary electrode grid 502 in the light-emitting sub-region Q11 to protect the light-emitting device. The second Zener diode includes an N-type doped layer 31N and a P-type doped layer 31P stacked. One of the N-type doped layer 31N and the P-type doped layer 31P of the second Zener diode can be in contact with the second electrode layer 40, and the other layer can be in contact with the auxiliary electrode strip 501 and / or the auxiliary electrode grid 502.

[0083] Fig.10 is a schematic cross-sectional structure diagram of a second Zener diode provided in an embodiment of the present invention, Fig.11 is a schematic cross-sectional structure diagram of another second Zener diode provided in an embodiment of the present invention, with reference to Fig.10 and Fig.11 , exemplarily showing that the second Zener diode is arranged on the surface of the auxiliary electrode strip away from the substrate 10. Fig.10 The N-type doped layer 31N in the second Zener diode shown is in contact with the auxiliary electrode strip 501, and the P-type doped layer 31P in the second Zener diode is in contact with the second electrode layer 40. Fig.11 The P-type doped layer 31P in the second Zener diode is in contact with the auxiliary electrode strip 501 , and the N-type doped layer 31N in the second Zener diode is in contact with the second electrode layer 40 .

[0084] Preferably, the N-type doped layer 31N in the second Zener diode is in contact with the auxiliary electrode strip and / or the auxiliary electrode grid, and the P-type doped layer 31P in the second Zener diode is in contact with the second electrode layer 40, so that when the light-emitting device operates under forward current and voltage, the second Zener diode is under reverse bias; this avoids the situation where the second Zener diode is under forward voltage when the light-emitting device operates under forward current and voltage, causing the operating voltage provided to the light-emitting device to be not too large, thereby affecting the brightness of the light-emitting screen.

[0085] Based on the above embodiments, optionally, Fig.12 is a schematic cross-sectional structure diagram of a third Zener diode provided in an embodiment of the present invention, with reference to Fig.12The light-emitting screen also includes at least one third Zener diode electrically connected to the first electrode lead 20; the third Zener diode is located between two adjacent first electrode leads 20; wherein the third Zener diode includes a P-type doping layer 31P and an N-type doping layer 31N arranged horizontally side by side.

[0086] It can be understood that a third Zener diode may be provided in the region between two adjacent first electrode leads 20 in the electrode lead region Q2 of the substrate 10. One of the P-type doped layer 31P and the N-type doped layer 31N of the third Zener diode is electrically connected to the second electrode layer 40, and the other is electrically connected to the first electrode lead 20. The P-type doped layer 31P and the N-type doped layer 31N of the third Zener diode may be located on the side of the insulating layer 60 close to the substrate 10, or may be located on the side of the insulating layer 60 away from the substrate 10. The third Zener diode may also be used to protect the light-emitting device and the first electrode lead 20 from being damaged by static electricity, thereby improving the reliability of the light-emitting screen. Fig.12 It is exemplarily shown that the P-type doped layer 31P of the third Zener diode is electrically connected to the second electrode layer 40 through a through hole, and the N-type doped layer 31N is electrically connected to the first electrode lead 20; and the P-type doped layer 31P and the N-type doped layer 31N of the third Zener diode are located on the side of the insulating layer 60 close to the substrate 10.

[0087] Preferably, reference Fig.12 The N-type doped layer 31N in the third Zener diode contacts the first electrode lead 20, and the P-type doped layer 31P in the third Zener diode contacts the second electrode layer 40, so that when the light-emitting device operates under forward current and voltage, the third Zener diode is under reverse bias; when the light-emitting device operates under forward current and voltage, the third Zener diode is prevented from being under forward voltage, resulting in the operating voltage provided to the light-emitting device being not easy to be too large, thereby affecting the brightness of the light-emitting screen.

[0088] Optionally, the third Zener diode may be arranged on a side of the first electrode lead 20 away from the substrate 10, and the P-type doped layer 31P and the N-type doped layer 31N arranged side by side in the third Zener diode are arranged on a side of the first electrode lead 20 away from the substrate 10. The N-type doped layer 31N contacts the first electrode lead 20, and the N-type doped layer 31N is isolated from the second electrode layer 40 by an insulating layer; the P-type doped layer 31P contacts the second electrode layer 40, and the P-type doped layer 31P is isolated from the first electrode lead 20 by another insulating layer.

[0089] Based on the above embodiments, optionally, Fig.13 is a schematic cross-sectional structure diagram of a light emitting device layer provided by an embodiment of the present invention, with reference to Fig.13, a first functional layer 62 is included between the first electrode layer 50 and the light-emitting layer 61, and a second functional layer 63 is included between the second electrode layer 40 and the light-emitting layer 61; wherein the P-type doped layer 31P is made of the same material as the first functional layer 62, and the N-type doped layer 31N is made of the same material as the second functional layer 63; or, the P-type doped layer 31P is made of the same material as the second functional layer 63; and the N-type doped layer 31N is made of the same material as the first functional layer 62.

[0090] Specifically, taking the first electrode layer 50 as an anode and the second electrode layer 40 as a cathode as an example, the first functional layer 62 includes at least one of a hole injection layer, a hole transport layer, and an electron blocking layer; the first functional layer 62 is used to increase the number of holes injected into the light-emitting layer 61. The second functional layer 63 includes at least one of an electron injection layer, an electron transport layer, and a hole blocking layer. The second functional layer 63 is used to increase the number of electrons injected into the light-emitting layer 61. The Zener diode (first Zener diode 1 / second Zener diode / third Zener diode) is made of materials in OLED, which does not increase the difficulty of the manufacturing process.

[0091] Among them, the N-type doping layer 31N of the Zener diode can be an electron injection layer in an OLED device, and the P-type doping layer 31P can be a hole injection layer in an OLED device. By adjusting the doping concentration of each layer, the breakdown voltage of the Zener diode can be controlled so that its Zener breakdown voltage is 2 times or more than 2 times the normal working voltage of the light-emitting device. In one embodiment of the present invention, the N-type doping layer 31N of the Zener diode is connected to the anode of the OLED device, and the P-type doping layer 31P is connected to the cathode of the OLED device. In this way, when the OLED device works under forward current and voltage, the Zener diode is under reverse bias, and the Zener breakdown voltage is higher than the normal working voltage. At this time, it is in a cut-off state, and the OLED can be normally lit. When a large amount of electrostatic charge is released, a large amount of current can pass through the Zener diode without increasing the voltage too much, thereby protecting the OLED device. In other embodiments of the present invention, the N-type doping layer 31N of the Zener diode is connected to the cathode of the OLED device, and the P-type doping layer 31P is connected to the anode of the OLED device, which can reduce the difficulty of connecting the Zener diode to the anode and cathode of the light-emitting device.

[0092] Based on the above embodiments, optionally, the N-type doping layer 31N is doped with N-type impurities, and the P-type doping layer 31P is doped with P-type impurities: wherein the N-type impurities include metal ions, and the doping concentration of the N-type impurities is greater than or equal to 2%.

[0093] On the basis of the above embodiments, optionally, an intermediate layer is further included between the N-type doped layer 31N and the P-type doped layer 31P of the Zener diode (the first Zener diode 1 / the second Zener diode / the third Zener diode), and the intermediate layer may be an undoped intrinsic layer, thereby forming a PIN diode, and the breakdown voltage of the Zener diode may be adjusted by the thickness of the intrinsic layer. The intermediate layer may also be a P-type intermediate layer (P-type lightly doped material layer) having a doping concentration less than that of the P-type doped layer, or the intermediate layer may be an N-type intermediate layer (N-type lightly doped material layer) having a doping concentration less than that of the N-type doped layer.

[0094] Based on the above embodiments, optionally, Fig.14 is a schematic cross-sectional structure diagram of another light emitting device layer provided by an embodiment of the present invention, referring to Fig.14 At least two light-emitting layers 61 are included between the first electrode layer 50 and the second electrode layer 40; a charge generation layer 64 is arranged between two adjacent light-emitting layers 61; the charge generation layer 64 includes a stacked P-type charge layer and an N-type charge layer; the material of the P-type doped layer 31P is the same as that of the P-type charge layer, and the thickness is the same; the material of the N-type doped layer 31N is the same as that of the N-type charge layer, and the thickness is the same.

[0095] Specifically, at least two light-emitting layers 61 are included between the first electrode layer 50 and the second electrode layer 40, that is, the light-emitting device is a stacked organic light-emitting diode (OLEDs) device. A charge-generation layer 64 (CGL) is provided between two adjacent light-emitting layers 61, and the stacked light-emitting device connects adjacent light-emitting layers 61 in series through the charge-generation layer 64. Under the action of the electric field, the charge-generation layer 64 can generate holes and electrons, and the holes and electrons generated by the charge-generation layer 64 are respectively injected into the adjacent light-emitting layers 61, and are respectively combined with the electrons from the cathode direction and the holes from the anode direction in each light-emitting layer 61 to generate exciton light emission, which makes it possible for the carriers to not need to cross the energy level barrier from the electrode to the charge injection layer, so that the charge injection does not rely on the electrode material. The current efficiency of the stacked device increases exponentially with the number of devices connected in series, and under the same initial brightness conditions, the life of the device will be longer than that of the traditional OLED device.

[0096] Taking the first electrode layer 50 as the anode and the second electrode layer 40 as the cathode as an example, along the direction from the first electrode layer 50 to the second electrode layer 40, the charge generation layer 64 includes an N-type charge layer and a P-type charge layer stacked in sequence. The N-type charge layer is doped with N-type doping impurities, and the P-type charge layer is doped with P-type doping impurities. The material of the N-type doping layer 31N in the Zener diode (the first Zener diode 1 / the second Zener diode / the third Zener diode) is the same as the material of the N-type charge layer, and the thickness is the same, and the material of the P-type doping layer 31P in the Zener diode (the first Zener diode 1 / the second Zener diode / the third Zener diode) is the same as the material of the P-type charge layer, and the thickness is the same, so that the N-type doping layer 31N and the P-type doping layer 31P in the Zener diode and the N-type charge layer and the P-type charge layer in the charge generation layer 64 can be prepared at the same time, thereby further simplifying the preparation process of the light-emitting screen. And the formed Zener diodes (the first Zener diode 1 / the second Zener diode / the third Zener diode) are under reverse bias when the light emitting device works normally.

[0097] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A light-emitting screen, characterized in that: include: A substrate, comprising a light-emitting area and a non-light-emitting area located at least on one side of the light-emitting area; wherein the non-luminescent region includes an electrode lead region; A light-emitting device layer, located in the light-emitting area of ​​the substrate; A plurality of first electrode leads, located in an electrode lead region of the substrate and electrically connected to the light emitting device layer; Among them, the electrode lead area also includes a first Zener diode electrically connected to the multiple first electrode leads; the first Zener diode includes a stacked N-type doped layer and a P-type doped layer; the N-type doped layer and the P-type doped layer are both extended along the arrangement direction of the multiple first electrode leads.

2. The light-emitting screen according to claim 1, characterized in that: The N-type doped layer and the P-type doped layer in the first Zener diode are located on a side of the first electrode lead away from the substrate; Alternatively, the N-type doped layer and the P-type doped layer in the first Zener diode are located on a side of the first electrode lead close to the substrate.

3. The light-emitting screen according to claim 2, characterized in that: The N-type doped layer is located on a side of the P-type doped layer close to the first electrode lead; a surface of the N-type doped layer close to the first electrode lead contacts with a plurality of first electrode leads, and a surface of the P-type doped layer away from the first electrode lead contacts with an electrode layer located in the electrode lead region; Alternatively, the N-type doped layer is located on a side of the P-type doped layer away from the first electrode lead, a surface of the P-type doped layer close to the first electrode lead contacts multiple first electrode leads, and a surface of the N-type doped layer away from the first electrode lead contacts an electrode layer located in the electrode lead area.

4. The light-emitting screen according to claim 1, characterized in that: The light emitting device layer comprises: A first electrode layer is located on one side of the substrate; the first electrode layer includes a plurality of first electrodes, each of which is electrically connected to an electrode lead; a light-emitting layer, located on a side of the first electrode layer away from the substrate; A second electrode layer is located on a side of the light-emitting layer away from the substrate and extends from the light-emitting area to the electrode lead area; Wherein, in the case where the N-type doped layer is located on a side of the P-type doped layer close to the substrate, a surface of the N-type doped layer close to the substrate contacts the first electrode lead, and a surface of the P-type doped layer away from the substrate contacts the second electrode layer; When the N-type doped layer is located on the side of the P-type doped layer away from the substrate, the surface of the N-type doped layer away from the substrate contacts the second electrode layer, and the surface of the P-type doped layer close to the substrate contacts the first electrode lead.

5. The light-emitting screen according to claim 4, characterized in that: In the electrode lead area, an insulating layer is included between the first electrode lead and the second electrode layer; a vertical projection of the insulating layer on the substrate does not completely overlap with a vertical projection of the N-type doped layer and the P-type doped layer on the substrate.

6. The light-emitting screen according to claim 5, characterized in that: The insulating layer comprises at least one opening, and the N-type doped layer and the P-type doped layer are located in the opening of the insulating layer; And / or, a distance between the insulating layer and a frame of the substrate is greater than zero; and the N-type doped layer and the P-type doped layer are located in a region between the insulating layer and the frame.

7. The light-emitting screen according to claim 4, characterized in that: The first electrode is surrounded by auxiliary electrode strips, and the first electrode is provided with an auxiliary electrode grid inside; The light emitting area further comprises at least one second Zener diode, wherein the second Zener diode comprises an N-type doping layer and a P-type doping layer stacked; The second Zener diode is arranged on a surface of the auxiliary electrode strip away from the substrate, and / or the second Zener diode is arranged on a surface of the auxiliary electrode grid away from the substrate.

8. The light-emitting screen according to claim 1, characterized in that: Also includes at least one third Zener diode electrically connected to the first electrode lead; the third Zener diode is located between two adjacent first electrode leads, or the third Zener diode is located on a side of the first electrode lead away from the substrate; Wherein, the third Zener diode includes a P-type doping layer and an N-type doping layer which are arranged horizontally side by side.

9. The light-emitting screen according to claim 1, 7 or 8, characterized in that: A first functional layer is included between the first electrode layer and the light-emitting layer in the light-emitting device layer, and a second functional layer is included between the second electrode layer in the light-emitting device layer and the light-emitting layer; wherein the P-type doped layer is made of the same material as the first functional layer; the N-type doped layer is made of the same material as the second functional layer; or, the P-type doped layer is made of the same material as the second functional layer, and the N-type doped layer is made of the same material as the first functional layer; Alternatively, at least two light-emitting layers are included between the first electrode layer and the second electrode layer; a charge generating layer is arranged between two adjacent light-emitting layers; the charge generating layer includes a stacked P-type charge layer and an N-type charge layer; the material of the P-type doped layer is the same as that of the P-type charge layer, and the thickness is the same; the material of the N-type doped layer is the same as that of the N-type charge layer, and the thickness is the same.

10. The light-emitting screen according to claim 1, 7 or 8, characterized in that: The N-type doping layer is doped with N-type impurities, and the P-type doping layer is doped with P-type impurities, wherein the N-type impurities include metal ions; And / or, an intermediate layer is further included between the N-type doped layer and the P-type doped layer; the intermediate layer is an undoped layer, or the intermediate layer is a P-type intermediate layer with a doping concentration lower than that of the P-type doped layer, or the intermediate layer is an N-type intermediate layer with a doping concentration lower than that of the N-type doped layer; And / or, the light-emitting screen includes the first Zener diode, the second Zener diode and the third Zener diode; the Zener breakdown voltage of at least one of the first Zener diode, the second Zener diode and the third Zener diode is greater than or equal to 2 times the rated voltage of the light-emitting device in the light-emitting device layer.

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