Temperature calibration method, measuring method and measuring device for crystal growing furnace

Abstract

The invention provides a temperature calibration method, a temperature measurement method and a temperature measurement device for a crystal growth furnace. The calibration method comprises the following steps: acquiring volume change speeds of a crystal at at least two temperatures in a target temperature interval; wherein the target temperature interval comprises the melting point of the crystal; determining temperature values of at least two temperatures according to the obtained volume change speed and a pre-stored volume change speed empirical value curve of the crystal in a target temperature interval; acquiring image gray levels of the target area in the furnace at at least two temperatures; and according to the obtained image gray scale and the temperature values of the at least two temperatures, determining a corresponding relation between the image gray scale of the target area and each temperature in the target temperature interval. According to the calibration method, subsequent temperature measurement of the crystal growth furnace can be facilitated, purchase of expensive equipment is avoided, equipment operation is simplified, and cost is greatly reduced.

Description

Technical Field

[0001] The invention relates to the technical field of crystal growth, and in particular to a temperature calibration method, a measurement method and a measurement device for a crystal growth furnace. Background Art

[0002] Single crystals such as silicon, silicon carbide, lithium niobate, and lithium tantalate are all grown in closed crystal growth furnaces at temperatures above one thousand degrees. Different temperatures need to be controlled at different stages of the growth process. Currently, the power of the heating furnace is generally controlled through manual experience, and judgment is made by observing the color and crystal shape in the furnace through the observation hole.

[0003] In order to solve the problem of automation of crystal growth, it is necessary to accurately measure the temperature in the furnace so as to automatically control the growth process. To solve this problem, emission spectroscopy, multi-spectroscopy, hyperspectroscopy and other schemes are usually used for high-temperature field temperature measurement. For example, patent CN 116124319 A measures the flame temperature through a fiber optic spectrometer connected to a high-temperature endoscope; patent CN112834051B measures the flame temperature through a multi-spectral camera. However, the instruments required for the above measurement methods are expensive and complicated to operate, making them difficult to apply on a large scale. Summary of the invention

[0004] Based on this, the present invention aims to provide an improved temperature calibration method, measurement method and measurement device for a crystal growth furnace to solve at least one of the above problems.

[0005] In a first aspect, the present application provides a temperature calibration method for a crystal growth furnace, the method comprising: Obtaining the volume change rate of the crystal at at least two temperatures within a target temperature range; wherein the target temperature range includes the melting point of the crystal; Determining temperature values ​​of the at least two temperatures according to the obtained volume change rate and a pre-stored empirical value curve of the volume change rate of the crystal within the target temperature range; Acquire the image grayscale of the target area in the furnace at the at least two temperatures; The corresponding relationship between the image grayscale of the target area and each temperature in the target temperature range is determined according to the obtained image grayscale and the temperature values ​​of the at least two temperatures.

[0006] The above calibration method measures the volume change rate of the crystal at at least two temperatures, and then determines the temperature values ​​of the at least two temperatures in combination with a pre-stored empirical value curve of the volume change rate and temperature. Then, the temperature evaluation value of the target area in the furnace at the at least two temperatures is used to calibrate the temperature in the crystal growth furnace. This not only facilitates the subsequent temperature measurement of the crystal growth furnace, but also avoids the purchase of expensive equipment, simplifies equipment operation, and greatly reduces costs.

[0007] In one embodiment, an observation window for observing the crystal in the furnace is provided on the side wall of the crystal growth furnace, and obtaining the volume change rate of the crystal at at least two temperatures within the target temperature range includes: obtaining a first image and a second image of the crystal at a temperature within the target temperature range separated by a preset time; determining the lateral change rate of the crystal according to the first image, the second image and the preset time; obtaining the longitudinal change rate of the crystal; determining the volume change rate of the crystal at the temperature according to the longitudinal change rate and the lateral change rate; repeating the above steps to obtain the volume change rate of the crystal at at least another temperature within the target temperature range.

[0008] In one embodiment, the volume change rate empirical value curve is obtained by pre-measuring the volume change rate of the crystal at different temperatures and drawing it in combination with the corresponding temperature.

[0009] In one embodiment, the target temperature interval is a temperature range of ±5°C of the melting point temperature.

[0010] In one of the embodiments, the volume change rate includes at least one of a growth rate of the crystal and a melting rate of the crystal.

[0011] In one of the embodiments, the step of acquiring the image grayscale of the target area in the furnace at the at least two temperatures comprises: determining the image grayscale of the target area in the furnace at the temperature according to at least one image at the temperature; determining the image grayscale of the target area in the furnace at at least another temperature according to at least one image at at least another temperature; Correspondingly, the corresponding relationship between the temperature evaluation value of the target area and each temperature in the target temperature range is determined based on the obtained temperature evaluation value and the temperature values ​​of the at least two temperatures, including: determining the grayscale change curve of the image grayscale of the target area in the target temperature range based on the obtained image grayscale and the temperature values ​​corresponding to each image grayscale.

[0012] In a second aspect, the present application provides a temperature measurement method for a crystal growth furnace, comprising: acquiring a target image including the target area in the furnace; determining the image grayscale of the target area in the furnace based on the target image; and determining the temperature in the furnace based on the image grayscale and the grayscale change curve obtained by the method described in the previous embodiment.

[0013] The above measurement method can quickly infer the temperature in the furnace by measuring the grayscale of the image of the target area in the furnace and combining the grayscale change curve of the image of the target area in the furnace obtained by calibration within the target temperature range. This helps to avoid the purchase of expensive equipment, simplify equipment operation, and greatly reduce costs.

[0014] In a third aspect, the present application provides a measuring device for a crystal growth furnace, wherein a side wall of the crystal growth furnace is provided with an observation window for conveniently acquiring an image of a crystal in the furnace, and the device comprises: a first acquisition module, configured to acquire the volume change rate of the crystal at at least two temperatures within a target temperature range, wherein the target temperature range includes the melting point of the crystal; a first determination module, connected to the first acquisition module, configured to determine temperature values ​​of the at least two temperatures based on the acquired volume change rate and a pre-stored empirical value curve of the volume change rate of the crystal in the target temperature range; a second acquisition module, connected to the first determination module, configured to acquire the image grayscale of a target area in the furnace at the at least two temperatures; a second determination module, connected to the second acquisition module, configured to determine the correspondence between the image grayscale of the target area and each temperature in the target temperature range based on the acquired image grayscale and the temperature values ​​of the at least two temperatures.

[0015] The above-mentioned measuring device can first measure the volume change rate of the crystal at at least two temperatures before measuring the temperature in the furnace, and then determine the temperature values ​​of the at least two temperatures by combining the volume change rate and temperature empirical value curve obtained by human eye observation, and then calibrate the temperature in the crystal growth furnace by using the temperature evaluation value of the target area in the furnace at the at least two temperatures. In this way, it is convenient for the subsequent temperature measurement of the crystal growth furnace, and at the same time avoids the purchase of expensive equipment, simplifies the equipment operation, and greatly reduces the cost.

[0016] In one of the embodiments, it also includes: a third acquisition module, configured to acquire the image grayscale of the target area; a third determination module, connected to the third acquisition module and the second determination module, configured to determine the temperature in the crystal growth furnace according to the image grayscale and the corresponding relationship.

[0017] In a fourth aspect, the present application provides a computer-readable storage medium for storing a computer program, wherein the computer program enables a computer to execute the steps in the method described in the above embodiment. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the implementation methods of this specification or the technical solutions in the prior art, the drawings required for use in the implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some implementation methods recorded in this specification. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0019] Figure 1 This is a flowchart of the steps of a calibration method according to an embodiment of the present application; Figure 2 A schematic diagram of temperature calibration / measurement in a furnace according to an embodiment of the present application; Figure 3 A first image of a crystal at a first temperature according to an embodiment of the present application; Figure 4 A second image of the crystal at a second temperature according to an embodiment of the present application; Figure 5 shows the growth rate curve of the crystal at different temperatures according to an embodiment of the present application; Figure 6 The figure shows the melting rate curve of the crystal at different temperatures according to an embodiment of the present application; Figure 7 A schematic diagram showing a target area in a furnace according to an embodiment of the present application is shown; Figure 8 shows a grayscale change curve of an embodiment of the present application; Fig. 9 FIG. 1 is a schematic diagram of the composition of a measuring device according to an embodiment of the present application. DETAILED DESCRIPTION

[0020] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present invention, so the present invention is not limited by the specific embodiments disclosed below.

[0021] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0022] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0023] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and are not intended to be the only implementation method.

[0024] The present application provides a simple and accurate temperature calibration method for a crystal growth furnace, which measures the volume change rate of a crystal at at least two temperatures, and then determines the temperature values ​​of the at least two temperatures in combination with a pre-stored empirical value curve of the crystal volume change rate and temperature, and then uses the temperature evaluation value of the target area in the furnace at the at least two temperatures to calibrate the temperature in the crystal growth furnace. In this way, it is convenient for subsequent temperature measurement of the crystal growth furnace, and at the same time avoids the purchase of expensive equipment, simplifies equipment operation, and greatly reduces costs.

[0025] like Figure 1 As shown, the embodiment of the present application provides a temperature calibration method for a crystal growth furnace, comprising the following steps: S100, obtaining a volume change rate of a crystal at at least two temperatures within a target temperature range; wherein the target temperature range includes a melting point of the crystal.

[0026] Exemplarily, when the temperature in the target temperature interval is less than the melting point, the volume change rate of the crystal may be the growth rate of the crystal; when the temperature in the target temperature interval is greater than or equal to the melting point, the volume change rate of the crystal may be the melting rate of the crystal.

[0027] Optionally, the heating power can be controlled to raise the temperature in the furnace below the melting point, and the lifting rod can be controlled to lower the seed crystal below the liquid surface. Then, the volume increase rate of the crystal (i.e., the growth rate of the crystal) can be obtained based on the lateral expansion rate of the crystal and the lifting speed of the lifting rod.

[0028] Optionally, the heating power can be controlled to raise the temperature in the furnace to a level greater than or equal to the melting point, and then the volume reduction rate of the crystal (i.e., the melting rate of the crystal) can be obtained based on the lateral reduction rate of the crystal and the descending speed of the lifting rod.

[0029] Exemplarily, "at least two temperatures" means greater than or equal to two temperatures, for example, it can be two, three, four, five, six, etc. The greater the number, the more accurate the subsequent calibration result will be.

[0030] S200 , determining temperature values ​​of at least two temperatures according to the obtained volume change rate and an empirical value curve of the volume change rate of the crystal within a target temperature range.

[0031] Illustratively, the crystal volume change rate empirical value curve reflects the relationship between the crystal volume change rate and temperature, so that based on the actually measured crystal volume change rate, the furnace temperature corresponding to the measured volume change rate can be inferred in combination with the pre-stored empirical value curve.

[0032] For example, the volume change rate empirical value curve can be obtained by measuring the volume change rate of the crystal at different temperatures in advance and plotting it in combination with the corresponding temperature.

[0033] Optionally, a crystal growth picture can be obtained at a predetermined time interval (such as 1s) at a known first set temperature in advance. The contour change at the contact position between the seed crystal and the liquid surface can be calculated through the aperture change of the picture, and the lateral expansion rate of the crystal can be obtained. Combined with the pulling speed, the growth rate of the crystal at the first set temperature can be obtained; then, the above steps can be repeated at a known second set temperature to obtain the volume change rate at the second set temperature; this can be repeated multiple times to obtain the required volume change rate empirical value curve based on multiple different set temperatures and the corresponding crystal volume change rates.

[0034] S300, obtaining temperature evaluation values ​​of a target area in a furnace at at least two temperatures.

[0035] Exemplarily, the temperature evaluation quantity may be a quantity that is positively correlated with the temperature in the furnace, for example, it may be the image grayscale of the target area in the furnace. Optionally, the target area may be an area at or near the crystal growth interface. It should be noted that the target area should avoid reflections, dirt, etc., to prevent image errors from affecting the measurement of the temperature evaluation quantity.

[0036] S400: Determine a correspondence between the temperature evaluation value of the target area and each temperature in the target temperature range according to the obtained temperature evaluation value and the temperature values ​​of at least two temperatures.

[0037] Exemplarily, when the temperature evaluation quantity is the image grayscale of the target area in the furnace, the grayscale change curve of the image grayscale of the target area within the target temperature range can be determined based on the obtained image grayscale and the temperature value corresponding to each image grayscale.

[0038] In some embodiments of the present application, Figure 2 As shown, the side wall of the crystal growth furnace is provided with an observation window for observing the crystal in the furnace, and the lifting rod, seed crystal and liquid level range can be imaged through the observation window by the camera. Optionally, the camera can be a scientific research-grade array camera (CCD or CMOS) with high dynamic range, low noise, and 16 / 18-bit high-precision ADC. Optionally, the camera has a very small fixed aperture so that the light intensity entering the camera is constantly attenuated, so that the radiation intensity in the furnace near the crystal melting point is within the dynamic range of the camera. Thus, step S100 may include: S110, acquiring a first image and a second image of the crystal at a temperature within a target temperature range separated by a preset time; S120, determining a lateral change speed of the crystal according to the first image, the second image and a preset time; S130, obtaining the longitudinal change speed of the crystal; S140, determining the volume change rate of the crystal at the temperature according to the longitudinal change rate and the lateral change rate; S150, repeat the above steps to obtain the volume change rate of the crystal at at least another temperature within the target temperature range.

[0039] Optionally, the temperature in the furnace may be raised to below the melting point, the lifting rod may be controlled to lower the seed crystal to be immersed below the liquid surface, and then a first image of the crystal at the first moment at the first temperature may be acquired by a camera, such as Figure 3 Then, after a preset time interval, a second image of the crystal at a second moment at the first temperature is obtained by the camera, as shown in FIG. Figure 4 As shown. Figure 4 The interface between the seed crystal and the liquid surface is compared with Figure 3The interface between the seed crystal and the liquid surface is significantly enlarged, indicating that the crystal is growing. Based on the first image, the second image and the method of measuring the crystal growth profile through the aperture, the lateral expansion rate of the crystal can be obtained. At the same time, based on the lifting speed of the lifting rod, the volume increase rate of the crystal can be obtained, and finally the growth rate curve of the crystal can be obtained. Repeating the above steps, the growth rate curves of the crystal at the second temperature, the third temperature, the fourth temperature and the fifth temperature can be obtained in turn, as shown in FIG. Figure 5 As shown, the first temperature represents the temperature at which the melting point decreases by 1°C, the second temperature represents the temperature at which the melting point decreases by 2°C, and so on. It can be seen that in the process of gradually increasing temperature (approaching the melting point), the higher the temperature, the slower the growth rate of the crystal.

[0040] Similarly, the temperature in the furnace can be raised to above the melting point, and the above volume change measurement process can be repeated to obtain the crystal at the sixth temperature, the seventh temperature, the eighth temperature, the ninth temperature, and the tenth temperature, such as Figure 6 As shown, the sixth temperature represents the temperature at which the melting point increases by 1°C, the seventh temperature represents the temperature at which the melting point increases by 2°C, and so on. It can be seen that in the process of gradually increasing temperature (away from the melting point), the higher the temperature, the faster the crystal melts.

[0041] It is worth noting that the relationship between the melting rate or growth rate of the crystal and the temperature near the melting point is very sensitive. Every increase or decrease of 1°C will cause a significant change in the melting or growth rate of the crystal. Therefore, according to the growth dynamics of different crystals and experience, the furnace temperature can be judged based on the melting rate or growth rate of the crystal combined with the empirical value curve, and then the temperatures corresponding to different melting rates or growth rates can be marked.

[0042] In some embodiments of the present application, step S300 includes: determining the image grayscale of the target area in the furnace at the temperature based on at least one image at the above-mentioned temperature; determining the image grayscale of the target area in the furnace at at least another temperature based on at least one image at at least another temperature; correspondingly, step S400 includes: determining the grayscale change curve of the image grayscale of the target area within the target temperature range based on the obtained image grayscale and the temperature value corresponding to each image grayscale.

[0043] Optional, such as Figure 7As shown, a target area within the field of view (such as the black box area in the figure) can be selected, and the image grayscale of the target area at different temperatures can be determined. Then, based on the obtained image grayscale and the temperature value corresponding to each image grayscale, the grayscale change curve of the image grayscale of the target area within the target temperature range can be determined. Optionally, the image grayscale can be represented by a corresponding integral value obtained by integrating the pixel grayscale of the target area. Optionally, the grayscale range of an ordinary 8-bit detector is 0 to 255. In order to better perform measurements, a 16-bit detector is used in the embodiment of the present application, so the corresponding maximum grayscale is In actual application, for better performance, the embodiment of the present application uses 1 less bit, so the corresponding maximum grayscale range is , so we can get the corresponding Figure 8 The grayscale change curve is shown.

[0044] An embodiment of the present application also provides a temperature measurement method for a crystal growth furnace, including: acquiring a target image including a target area in the furnace; determining the image grayscale of the target area in the furnace based on the target image; and determining the temperature in the furnace based on the image grayscale and a grayscale change curve obtained by the method described in the previous embodiment.

[0045] The above measurement method can quickly infer the temperature in the furnace by measuring the grayscale of the image of the target area in the furnace and combining the grayscale change curve of the image of the target area in the furnace obtained by calibration within the target temperature range. This helps to avoid the purchase of expensive equipment, simplify equipment operation, and greatly reduce costs.

[0046] The embodiment of the present application also provides a measuring device for a crystal growth furnace, wherein a side wall of the crystal growth furnace is provided with an observation window for conveniently obtaining an image of the crystal in the furnace, such as Fig. 9 As shown, the measuring device includes: a first acquisition module, configured to acquire the volume change rate of the crystal at at least two temperatures within a target temperature range, wherein the target temperature range includes the melting point of the crystal; a first determination module, connected to the first acquisition module, configured to determine the temperature values ​​of at least two temperatures based on the acquired volume change rate and a pre-stored empirical value curve of the volume change rate of the crystal within the target temperature range; a second acquisition module, connected to the first determination module, configured to acquire the temperature evaluation value of the target area in the furnace at at least two temperatures; a second determination module, connected to the second acquisition module, configured to determine the corresponding relationship between the temperature evaluation value of the target area and each temperature within the target temperature range based on the acquired temperature evaluation value and the temperature values ​​of at least two temperatures.

[0047] The above-mentioned measuring device can first measure the volume change rate of the crystal at at least two temperatures before measuring the temperature in the furnace, and then determine the temperature values ​​of the at least two temperatures by combining the volume change rate and temperature empirical value curve obtained by human eye observation, and then calibrate the temperature in the crystal growth furnace by using the temperature evaluation value of the target area in the furnace at the at least two temperatures. In this way, it is convenient for the subsequent temperature measurement of the crystal growth furnace, and at the same time avoids the purchase of expensive equipment, simplifies the equipment operation, and greatly reduces the cost.

[0048] In some embodiments of the present application, see Fig. 9 The measuring device further includes: a third acquisition module configured to acquire a temperature evaluation value of a target area; a third determination module connected to the third acquisition module and the second determination module, configured to determine the temperature in the crystal growth furnace according to the temperature evaluation value and the corresponding relationship. Optionally, the temperature evaluation value may be an image grayscale of the target area in the furnace.

[0049] An embodiment of the present application also provides a computer-readable storage medium for storing a computer program, which enables a computer to execute the steps in the calibration method described in the previous embodiment or the measurement method described in the previous embodiment.

[0050] It should be noted that the numbers representing quantities or properties used to describe and claim certain embodiments of the present application should be understood to be modified by the terms "roughly", "about", "approximately" or "substantially" in some cases. For example, unless otherwise specified, "roughly", "about", "approximately" or "substantially" can indicate a ±20% variation of the value described. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of the present application are approximate values, in specific embodiments, the setting of such numerical values ​​is as accurate as possible within the feasible range.

[0051] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0052] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A temperature calibration method for a crystal growth furnace, characterized in that: The method comprises: Obtaining the volume change rate of the crystal at at least two temperatures within a target temperature range; wherein the target temperature range includes the melting point of the crystal; Determining temperature values ​​of the at least two temperatures according to the obtained volume change rate and a pre-stored empirical value curve of the volume change rate of the crystal within the target temperature range; Acquire the image grayscale of the target area in the furnace at the at least two temperatures; The corresponding relationship between the image grayscale of the target area and each temperature in the target temperature range is determined according to the obtained image grayscale and the temperature values ​​of the at least two temperatures.

2. The method according to claim 1, characterized in that The side wall of the crystal growth furnace is provided with an observation window for observing the crystal in the furnace, and the obtaining of the volume change rate of the crystal at at least two temperatures within the target temperature range includes: Acquire a first image and a second image of the crystal at a temperature within the target temperature range separated by a preset time; determining a lateral change speed of the crystal according to the first image, the second image and the preset time; Obtaining the longitudinal change speed of the crystal; Determine the volume change rate of the crystal at the temperature according to the longitudinal change rate and the lateral change rate; Repeat the above steps to obtain the volume change rate of the crystal at at least another temperature within the target temperature range.

3. The method according to claim 1 or 2, characterized in that: The volume change rate empirical value curve is obtained by measuring the volume change rate of the crystal at different temperatures in advance and drawing it in combination with the corresponding temperature.

4. The method according to claim 1 or 2, characterized in that: The target temperature interval is a temperature range of ±5° C. from the melting point.

5. The method according to claim 1 or 2, characterized in that: The volume change rate includes at least one of a growth rate of the crystal and a melting rate of the crystal.

6. The method according to claim 2, characterized in that The acquiring of the image grayscale of the target area in the furnace at the at least two temperatures comprises: determining the image grayscale of the target area in the furnace at the temperature according to at least one image at the temperature; determining the image grayscale of the target area in the furnace at at least another temperature according to at least one image at the at least another temperature; Accordingly, The determining, based on the obtained temperature evaluation value and the temperature values ​​of the at least two temperatures, a corresponding relationship between the temperature evaluation value of the target area and each temperature in the target temperature range includes: A grayscale variation curve of the image grayscale of the target area within the target temperature range is determined according to the obtained image grayscale and the temperature value corresponding to each of the image grayscales.

7. A method for measuring the temperature of a crystal growth furnace, characterized in that: include: Acquire a target image including the target area in the furnace; Determining the image grayscale of the target area in the furnace according to the target image; The temperature inside the furnace is determined according to the grayscale of the image and the grayscale variation curve obtained by the method according to claim 6.

8. A measuring device for a crystal growth furnace, characterized in that: include: A first acquisition module is configured to acquire a volume change rate of the crystal at at least two temperatures within a target temperature range, wherein the target temperature range includes a melting point of the crystal; a first determination module connected to the first acquisition module, and configured to determine the temperature values ​​of the at least two temperatures according to the obtained volume change rate and a pre-stored empirical value curve of the volume change rate of the crystal in the target temperature range; A second acquisition module, connected to the first determination module, is configured to acquire the image grayscale of the target area in the furnace at the at least two temperatures; The second determination module is connected to the second acquisition module and is configured to determine the correspondence between the image grayscale of the target area and each temperature in the target temperature range according to the obtained image grayscale and the temperature values ​​of the at least two temperatures.

9. The device according to claim 8, characterized in that Also includes: A third acquisition module is configured to acquire the image grayscale of the target area; The third determination module is connected to the third acquisition module and the second determination module, and is configured to determine the temperature in the crystal growth furnace according to the image grayscale and the corresponding relationship.

10. A computer-readable storage medium, characterized in that: Used to store a computer program, wherein the computer program enables a computer to execute the steps of the method according to any one of claims 1 to 6 or the method according to claim 7.

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