True random number generator based on photoelectric coordinated control memristor and preparation method

Abstract

The invention discloses a true random number generator based on a photoelectric coordinated control memristor and a preparation method. The true random number generator comprises a photoelectric coordinated control memristor, an illumination control module, a pulse generation module and a monitoring module, the illumination control module is used for providing illumination for the photoelectric coordinated control memristor according to the control of the monitoring module; the pulse generation module is used for providing a preset pulse signal for the photoelectric coordinated control memristor; the photoelectric coordinated control memristor is used for generating a random number by taking the on-off of a conductive channel of the resistive layer as a random entropy source according to a preset pulse signal when illumination exists or illumination meets a preset condition, and stopping generating the random number when illumination does not exist or illumination does not meet the preset condition; and the monitoring module is used for monitoring the random number output by the photoelectric coordinated control memristor, and when the same random number is continuously output for multiple times, a control signal is sent to the illumination control module to enable the illumination control module to close illumination or provide illumination which does not meet a preset condition. According to the invention, self-checking and on-off control of the true random number generator can be realized.

Description

Technical Field

[0001] The present invention belongs to the field of microelectronic technology, and in particular relates to a true random number generator based on a photoelectric cooperatively controlled memristor and a preparation method thereof. Background Art

[0002] With the rapid development of mobile computing and the Internet of Things, protecting information security has become crucial, and random numbers play an important role in the field of security encryption. Traditional pseudo-random number generators generate random numbers based on deterministic algorithms and predictable physical processes, and have poor reliability. True random number generators use truly random physical processes or phenomena in nature as random entropy sources and have extremely high security.

[0003] In recent years, memristors have been widely used in the electronics field due to their simple structure, high storage density, and fast switching speed. The residual instability of the internal conductive wire breakage during the RESET process of the memristor leads to strong randomness in its SET process, which has a strong potential for application in true random number generators.

[0004] The true random number generator based on memristor has the advantages of fast speed, low power consumption and high integration. However, the strong randomness left by the broken conductive wires inside the resistive layer also aggravates the instability of its generated random numbers. It is easy to have unidirectional changes as the number of cycles increases, causing the true random number generator to fail, which reduces the stability and reliability of the device's parallel operation.

[0005] Therefore, how to prevent memristor failure from affecting the quality of random number sequences generated by true random number generators has become an urgent problem to be solved. Summary of the invention

[0006] In order to solve the above problems existing in the prior art, the present invention provides a true random number generator based on a photoelectric coordinated memristor and a preparation method thereof.

[0007] The technical problem to be solved by the present invention is achieved through the following technical solutions:

[0008] The present invention provides a true random number generator based on a photoelectric cooperatively controlled memristor, comprising: a photoelectric cooperatively controlled memristor, a light control module, a pulse generation module and a monitoring module; wherein the photoelectric cooperatively controlled memristor is electrically connected to the pulse generation module and the monitoring module respectively, and the monitoring module is also electrically connected to the light control module;

[0009] The illumination control module is used to provide illumination for the photoelectric cooperatively controlled memristor according to the control of the monitoring module;

[0010] The pulse generating module is used to provide a preset pulse signal to the photoelectric cooperatively controlled memristor;

[0011] The photoelectric coordinated memristor is used to generate random numbers according to the preset pulse signal using the on / off of the conductive channel of the resistive layer as a random entropy source when there is light or the light meets the preset conditions, and stop generating random numbers when there is no light or the light does not meet the preset conditions;

[0012] The monitoring module is used to monitor the random number output by the photoelectric cooperative memristor, and when the photoelectric cooperative memristor outputs the same random number for multiple consecutive times, send a control signal to the illumination control module to make the illumination control module turn off the illumination or provide illumination that does not meet the preset conditions.

[0013] The present invention also provides a method for preparing a photoelectric cooperatively controlled memristor, which is used to prepare the photoelectric cooperatively controlled memristor in the true random number generator based on the photoelectric cooperatively controlled memristor as described above, and the method comprises:

[0014] S1. Prepare substrate;

[0015] S2, forming a SiO2 thin film layer on the substrate;

[0016] S3, preparing a photosensitive material layer, and transferring the prepared photosensitive material layer onto the SiO2 thin film layer to form a light modulation layer;

[0017] S4, depositing a resistive material layer on the SiO2 thin film layer, and forming a desired shape by photolithography to form a first resistive layer and a second resistive layer respectively located on both sides of the light modulation layer;

[0018] S5. Prepare a drain terminal and a source terminal on the SiO2 thin film layer.

[0019] Compared with the prior art, the present invention has the following beneficial effects:

[0020] The present invention enables the photoelectric cooperative memristor in the true random number generator to generate random numbers according to a preset pulse signal when there is light or the light meets a preset condition, and to stop generating random numbers when there is no light or the light does not meet the preset condition. At the same time, the random numbers generated by the photoelectric cooperative memristor are monitored, and when the photoelectric cooperative memristor outputs the same random number for multiple consecutive times, it is considered that the photoelectric cooperative memristor is invalid. At this time, the photoelectric cooperative memristor is stopped from working by controlling the light to be turned off or making the light not meet the preset condition, so that the true random number generator stops outputting random numbers. Otherwise, the photoelectric cooperative memristor continues to work, so that the true random number generator continues to output random numbers normally. In this way, real-time self-check of the true random number generator can be achieved, and the true random number generator is automatically shut down when the quality of the random number output by the true random number generator decreases, thereby improving the stability, reliability and throughput of the true random number generator, and facilitating device integration. In addition, since the photoelectric cooperative memristor works according to the lighting conditions, the potential barrier of the photoelectric cooperative memristor can be adjusted by changing the light intensity to reduce the voltage required for the photoelectric cooperative memristor to work, thereby ultimately reducing the power consumption of the photoelectric cooperative memristor.

[0021] The present invention will be further described in detail below with reference to the accompanying drawings and specific implementation methods. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a schematic diagram of the structure of a true random number generator based on a photoelectric cooperatively controlled memristor provided in an embodiment of the present invention;

[0023] Figure 2 is a model diagram of a photoelectric cooperatively controlled memristor provided in an embodiment of the present invention;

[0024] Figure 3 is a vertical cross-sectional view along the center line of the photoelectric cooperatively controlled memristor provided by an embodiment of the present invention;

[0025] Figure 4 It is a schematic diagram of a preparation process of a photoelectric cooperatively controlled memristor provided in an embodiment of the present invention;

[0026] Figure 5 is another schematic diagram of the preparation process of the photoelectric cooperatively controlled memristor provided in an embodiment of the present invention;

[0027] Figure 6 1 is a working principle diagram of a true random number generator based on a photoelectric cooperatively controlled memristor provided in an embodiment of the present invention;

[0028] Figure 7 It is a flow chart of a method for generating random numbers using a memristor provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0029] The present invention is further described in detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.

[0030] Figure 1 is a schematic diagram of the structure of a true random number generator based on a photoelectric cooperatively controlled memristor provided in an embodiment of the present invention, such as Figure 1 As shown, the true random number generator includes: a photoelectric cooperative memristor, an illumination control module, a pulse generation module and a monitoring module; wherein the photoelectric cooperative memristor is electrically connected to the pulse generation module and the monitoring module respectively, and the monitoring module is also electrically connected to the illumination control module. The illumination control module is used to provide illumination to the photoelectric cooperative memristor according to the control of the monitoring module. The pulse generation module is used to provide a preset pulse signal to the photoelectric cooperative memristor. The photoelectric cooperative memristor is used to generate random numbers according to the preset pulse signal using the on-off of the conductive channel of the resistive layer as a random entropy source when there is illumination or the illumination meets the preset conditions, and to stop generating random numbers when there is no illumination or the illumination does not meet the preset conditions. The monitoring module is used to monitor the random numbers output by the photoelectric cooperative memristor, and when the photoelectric cooperative memristor outputs the same random number for multiple times in a row, send a control signal to the illumination control module to make the illumination control module turn off the illumination or provide illumination that does not meet the preset conditions.

[0031] Here, the preset condition is a light condition that enables the photoelectric cooperative memristor to work. For example, the preset condition may be a light intensity threshold and a wavelength that can make the barrier of the photosensitive material in the photoelectric cooperative memristor low to reduce the operating voltage of the photoelectric cooperative memristor, so that when the wavelength of the output light is the wavelength, when the provided light intensity is greater than or equal to the light intensity threshold, the photoelectric cooperative memristor can be operated, and when the provided light intensity is less than the light intensity threshold, the photoelectric cooperative memristor stops working. The preset condition here may also be other light conditions that enable the photoelectric cooperative memristor to work, and the present invention does not limit the preset condition.

[0032] In some embodiments, for the monitoring module, if it is detected that the photoelectrically-controlled memristor outputs the same random number multiple times in a row, a control signal to turn off the light can be sent to the light control module, so that the light control module can directly turn off the light to stop the photoelectrically-controlled memristor from working; or, a control signal to weaken the light can be sent to the light control module, so that the light control module can weaken the light without changing the wavelength to stop the photoelectrically-controlled memristor from working.

[0033] In some embodiments, the photoelectric cooperative memristor includes: a horizontally arranged drain terminal, a first resistive layer, an optical modulation layer, a second resistive layer, and a source terminal; wherein the optical modulation layer is located between the first resistive layer and the second resistive layer; the drain terminal and the source terminal are respectively located at one end of the first resistive layer and the second resistive layer away from the optical modulation layer; the optical modulation layer is used to insulate when there is no light or the light does not meet the preset conditions, and to conduct when there is light or the light meets the preset conditions. Specifically, the pulse generation module is electrically connected to one of the drain terminal and the source terminal of the photoelectric cooperative memristor, and the monitoring module is electrically connected to the other of the drain terminal and the source terminal of the photoelectric cooperative memristor.

[0034] Specifically, the optical modulation layer is used to control the switching state of the memristor. Under specific illumination, the optical modulation layer is turned on. After applying voltage to the drain terminal, the first resistive variable layer and the second resistive variable layer can form a conductive channel, so that the memristor is turned on. When there is no illumination or the illumination conditions do not meet specific requirements, the optical modulation layer is insulated. Although voltage is applied to the drain terminal, the second set of variable layers cannot form a conductive channel, so the memristor is turned off. In addition, by adjusting the frequency, intensity and other parameters of the applied illumination, the channel barrier can be reduced, the operating voltage of the device can be reduced, and the power consumption can be further reduced.

[0035] In some embodiments, the photoelectrically coordinated memristor includes a drain terminal, a first resistive switching layer, a light modulation layer, a second resistive switching layer, and a source terminal, and further includes a SiO2 thin film layer and a substrate. Exemplarily, the substrate may be a Si substrate. Exemplarily, Figure 2 and Figure 3 2 are two structural schematic diagrams of the photoelectric cooperative memristor of the present invention. Figure 2 and Figure 3 As shown, the SiO2 thin film layer 2 is located on one side of the substrate 1, and the drain terminal 3, the first resistive layer 5, the optical modulation layer 7, the second resistive layer 6 and the source terminal 4 are horizontally distributed on the side of the SiO2 thin film layer 2 away from the substrate 1.

[0036] In some embodiments, Figure 3 As shown, the ends of the first resistive layer 5 and the second resistive layer 6 away from the optical modulation layer 7 are respectively buried in the drain terminal 3 and the source terminal 4; that is, the drain terminal 3 is partially covered on the first resistive layer 5, and is partially in direct contact with the SiO2 thin film layer, and the source terminal 4 is partially covered on the second resistive layer 6, and is partially in direct contact with the SiO2 thin film layer. In this way, the contact area between the electrode and the resistive layer can be increased, thereby improving the controllability and durability of the memristor and reducing the power consumption of the memristor.

[0037] In some embodiments, the material of the light modulation layer 7 is a photosensitive material. For example, the material of the light modulation layer 7 is any one of MoS2, CdS, and TiO2. Exemplarily, the material of the light modulation layer 7 is MoS2.

[0038] In some embodiments, the materials of the first resistive layer 5 and the second resistive layer 6 are both metal oxide materials or perovskite materials. For example, the metal oxide material is Ta2O5, WO3, ZnO, Al2O3, or the perovskite material is (CH3NH3)2InCl3 or CsSn(Br / Cl)3. Exemplarily, the material of the first resistive layer 5 and the second resistive layer 6 is Ta2O5.

[0039] In the present invention, the material of the drain terminal 3 and the source terminal 4 is a metal material, for example, one or two of Ti, W, Ni, Co, Al, Ag, Pt, and Cu. Exemplarily, the material of the drain terminal 3 is Ag, and the material of the source terminal 4 is W.

[0040] In some embodiments, in the vertical direction, the thickness of the Si substrate 1 is in the range of 50-200 um, and the thickness of the SiO2 film 2 is in the range of 50 nm-2 um. Exemplarily, the thickness of the Si substrate 1 is in the range of 100 um, and the thickness of the SiO2 film 2 is in the range of 1 um.

[0041] In some embodiments, in the horizontal direction, the length of the optical modulation layer 7 is 4-6 um, and the lengths of the first resistive layer 5 and the second resistive layer 6 are both 2-3 um. Exemplarily, the length of the optical modulation layer 7 is 5 um, and the lengths of the first resistive layer 5 and the second resistive layer 6 are both 2.5 um.

[0042] In some embodiments, in the horizontal direction, the length of the channel composed of the first resistive layer 5, the optical modulation layer 7 and the second resistive layer 6 is in the range of 8-12um, the width is in the range of 3-5um, and in the vertical direction, the thickness of the channel is in the range of 40-60nm. Exemplarily, the thickness of the channel composed of the first resistive layer 5, the optical modulation layer 7 and the second resistive layer 6 is 50nm, the width is 4um, and the length is 10um.

[0043] In some embodiments, in the vertical direction, the drain terminal 3 and the source terminal 4 have a thickness range of 80-100 nm, a width range of 4-6 um, and a length range of 4-6 um. Exemplarily, the drain terminal 3 and the source terminal 4 have a thickness of 80 nm, a width of 5 um, and a length of 5 um.

[0044] In some embodiments, the widths of the drain terminal 3 and the source terminal 4 are greater than the width of the channel formed by the first resistive layer 5 , the optical modulation layer 7 and the second resistive layer 6 .

[0045] In some embodiments, the first resistive layer 5 and the second resistive layer 6 are buried in the drain terminal 3 and the source terminal 4 by a length of 1-2 um. Exemplarily, the first resistive layer 5 and the second resistive layer 6 are buried in the drain terminal 3 and the source terminal 4 by a length of 1.5 um.

[0046] The present invention also provides a method for preparing a photoelectric cooperatively controlled memristor, which is used to prepare the above-mentioned photoelectric cooperatively controlled memristor, and the method comprises:

[0047] S1. Prepare substrate;

[0048] S2, forming a SiO2 thin film layer on the substrate;

[0049] S3, preparing a photosensitive material layer, and transferring the prepared photosensitive material layer onto the SiO2 thin film layer to form a light modulation layer;

[0050] S4, depositing a resistive material layer on the SiO2 thin film layer, and forming a desired shape by photolithography to form a first resistive layer and a second resistive layer respectively located on both sides of the light modulation layer;

[0051] S5. Prepare a drain terminal and a source terminal on the SiO2 thin film layer.

[0052] For example, the following will be Figure 4 and Figure 5 Taking the photosensitive material layer as MoS2 as an example, the preparation process is described in detail. Figure 4 and Figure 5 As shown, the preparation method comprises:

[0053] S10, preparing a Si substrate.

[0054] The thickness of the Si substrate is 50-200um. The Si wafer is thoroughly cleaned to remove surface impurities and contaminants, including cleaning and rinsing before entering the furnace.

[0055] S20, thermally oxidizing the surface of the substrate to form a SiO2 film.

[0056] Place the cleaned silicon substrate into a thermal oxidation furnace for thermal oxidation process to form a silicon dioxide film on the surface of the silicon wafer. Control the temperature in the range of 900-1200℃, oxygen flow rate 50-200sccm, oxygen pressure 1-5 Torr, thermal oxidation for 30min-2h to form a silicon dioxide film with uniform thickness. After the thermal oxidation is completed, take the silicon substrate out of the thermal oxidation furnace and let it cool naturally to room temperature.

[0057] It should be noted that too high a thermal oxidation temperature, too fast an oxygen flow rate, or too high an oxygen pressure will lead to uneven thickness of the silicon dioxide film and reduced quality, so the parameters should be selected reasonably. For example, the thermal oxidation temperature is about 1000°C, the oxygen flow rate is 200 sccm, the oxygen pressure is 2 Torr, and the thermal oxidation time is 1 hour.

[0058] It should be noted that after the thermal oxidation is completed, the SiO2 film needs to be pre-treated to ensure that it is free of pollution, dry and moisture-free. Wet cleaning (such as ultrasonic cleaning) and dry cleaning (such as plasma cleaning) can be used to remove organic matter, particles and pollutants on the surface of the SiO2 film. Finally, a drying operation is performed.

[0059] S30, multilayer MoS2 was transferred onto SiO2 substrate by micromechanical exfoliation, with MoS2 layer thickness of 40-60nm, length of 4-6um, and width of 3-5um.

[0060] Micromechanical exfoliation is a high-precision exfoliation technique for exfoliating two-dimensional materials such as MoS2.

[0061] First, high-quality multilayer MoS2 is obtained by mechanical cutting or liquid phase exfoliation. The obtained MoS2 sample is placed on a clean coverslip for micromechanical exfoliation. Before exfoliation, ensure that the workbench is clean and dust-free, and use high-purity Ar gas or vacuum environment to reduce pollutants in the air. Place the SiO2 substrate in a suitable position, and the substrate surface also needs to be kept clean and flat. Use a microscope and mechanical tools (such as the tip of an atomic force microscope (AFM)) to gently tap or scratch the surface of the MoS2 sample. Through tiny mechanical forces, the layered MoS2 will be peeled off due to the weak van der Waals force between the layers. Control the strength and speed of the tip to avoid damaging the MoS2 layer. The sample can be observed in real time during the exfoliation process to ensure the effect of the exfoliation. Once the desired MoS2 layer is exfoliated, it is immediately transferred to the SiO2 substrate. The MoS2 layer is placed on the SiO2 substrate through simple mechanical contact and gently pressed to attach it. The MoS2 layer is fixed to the SiO2 substrate using intermolecular forces or a slight adhesive (such as a coupling agent or polymer solution). The exfoliated MoS2 layer needs to be dried in a vacuum dryer to remove any residual solvent or moisture. Finally, post-processing is performed to inspect the exfoliated and transferred samples to confirm the quality and position of the MoS2 layer. If necessary, further processing such as cleaning and etching is performed. Finally, the MoS2 light modulation layer is obtained.

[0062] S40, depositing a metal oxide resistive material layer with the same thickness as the MoS2 layer on the SiO2 film. The resistive material can be any one of Ta2O5 and TiO2. Use photolithography to form a desired shape.

[0063] Deposit a Ta2O5 layer with the same thickness as the MoS2 layer in S30 by ion beam sputtering or magnetron sputtering, and then dry it to ensure the stability of the Ta2O5 layer during the photolithography process. Coat a layer of photoresist on the SiO2 film, the MoS2 layer and the deposited Ta2O5 film. Use spin coating, spray coating or drop coating to evenly coat the photoresist on the sample surface. Place the sample coated with the photoresist in a pre-baking device to remove the solvent in the photoresist and enhance the adhesion of the photoresist to the SiO2 film and the Ta2O5 film. Use ultraviolet photolithography or electron beam photolithography to perform photolithography on the sample coated with the photoresist. According to the size parameter requirements of the first resistive layer and the second resistive layer, select a suitable photolithography pattern and parameters, and retain two pieces of photoresist with the same shape and the same width as the MoS2 layer and a length of 2-3um. Place the photolithographic sample in a developer to remove the Ta2O5 film not covered by the photoresist. Finally, the sample is subjected to hardening, post-baking and photoresist removal operations to obtain the first resistive switching layer and the second resistive switching layer of the desired shape.

[0064] S50, preparing the drain terminal and the source terminal through a lift-off process to obtain a photoelectric cooperatively controlled memristor.

[0065] The lift-off process is a microelectronics manufacturing technology that is mainly used to make tiny metal or insulating film patterns.

[0066] First, the sample is coated with photoresist, and then the photoresist at the drain and source electrode positions is exposed to ultraviolet light using a photolithography machine to crosslink and harden the photoresist, while the unexposed photoresist at the electrode position remains softened. The exposed substrate is placed in a developer to remove the unexposed photoresist and expose the pattern on the substrate surface. A metal electrode material with a thickness of 80-100nm is deposited on the developed substrate by thermal evaporation, and post-baking is performed to improve the adhesion and stability of the electrode material. The substrate is then immersed in a degumming solution to dissolve and remove the photoresist. At the same time, the electrode material deposited on the substrate will also be lifted-off, leaving the desired pattern. Finally, it is cleaned and inspected to obtain a photoelectric co-controlled memristor.

[0067] In some embodiments, the illumination control module can provide illumination of preset intensity and preset wavelength, and the values ​​of the preset intensity and preset wavelength can be set according to actual needs, which is not limited by the present invention. For example, the illumination control module can provide ultraviolet light with a wavelength of 200nm.

[0068] In some embodiments, the pulse generating module can alternately output a preset positive voltage signal and a random negative voltage signal that varies within a preset range, and the size of the positive voltage signal and the size of the preset range can be set according to actual needs, and the present invention does not limit this. For example, the pulse generating module can alternately output a positive voltage of 2V and a negative voltage of a random size in the range of 1.5-2.5V, so that the photoelectric co-controlled memristor can complete the SET operation through the positive voltage and complete the RESET operation through a random negative voltage within the voltage range. The present invention avoids the problem of the SET voltage decreasing with the increase of the cycle test due to the incomplete breakage of the conductive filaments by applying a random negative voltage that varies within a certain range to the photoelectric co-controlled memristor during the RESET process of the photoelectric co-controlled memristor.

[0069] Figure 6 This is the working principle diagram of the true random number generator based on the photoelectric cooperative memristor; Figure 7 This is a schematic diagram of the method of generating random numbers using a photoelectric co-controlled memristor. Figure 6 As shown, before the true random number generator starts working, it is necessary to set the parameters of the illumination control module and the pulse generation module to input appropriate voltage and illumination to the photoelectric cooperative memristor module. For example, the illumination provided by the illumination control module is ultraviolet light with a wavelength of 200nm, and the pulse voltage output by the pulse generation module is a pulse voltage with a forward voltage of 2V and a negative voltage of a random size in the range of 1.5-2.5V. After completing the parameter setting, the above-mentioned pulse voltage is applied to the drain end of the photoelectric cooperative memristor. Specifically, a 2V forward voltage is first applied to the photoelectric cooperative memristor to enable the photoelectric cooperative memristor to complete the SET operation, and then a negative voltage of a random size in the range of 1.5-2.5V is applied to enable the photoelectric cooperative memristor to complete the RESET operation, and then a 2V forward voltage is applied to enable the photoelectric cooperative memristor to complete the SET operation, and the above operation is repeated. For a memristor, such as Figure 7As shown, the moment when the pulse generation module starts to provide the pulse voltage is t=0. At t1, when the pulse generation module outputs a high-level pulse signal, and if the memristor has completed the SET operation at this time, the memristor starts to output the set limiting current. The output signal is amplified by the amplifier and input into the logic "AND" gate together with the high-level pulse signal generated by the signal generator. At this time, the output of the "AND" gate is 1; conversely, if the memristor has not completed the SET operation at t1, the output of the "AND" gate is 0, and the above steps are repeated to complete the generation of random numbers. It should be noted that the time interval between 0 and t1 can be obtained through testing. For example, in one embodiment of the present invention, 784 SET operations are performed on the photoelectric cooperative memristor. Among the 784 sets of SET completion time data obtained by the test, the maximum value is 1.484s and the minimum value is 1.025s. The middle value of the two, 1.255s, is taken as t1. Continue to refer to Figure 6 The random numbers generated by the memristor need to be tested by the monitoring module to detect whether the memristor is invalid. If the random numbers generated by the memristor are of qualified quality (i.e., the levels of the consecutive outputs are different), the random number sequence is normally output. If the same level is detected to be output repeatedly, the memristor can be considered invalid. At this time, the monitoring module controls the illumination control module to turn off the illumination or weaken the output illumination to turn off the memristor, thereby stopping the random number generation.

[0070] Exemplarily, the monitoring module may be a sequence detector. If the monitoring module detects that 10 high levels are output continuously or 10 low levels are output continuously, it may be considered that the memristor is failed.

[0071] The present invention enables the photoelectric cooperative memristor in the true random number generator to generate random numbers according to a preset pulse signal when there is light or the light meets a preset condition, and to stop generating random numbers when there is no light or the light does not meet the preset condition. At the same time, the random numbers generated by the photoelectric cooperative memristor are monitored, and when the photoelectric cooperative memristor outputs the same random number for multiple consecutive times, it is considered that the photoelectric cooperative memristor is invalid. At this time, the photoelectric cooperative memristor is stopped from working by controlling the light to be turned off or making the light not meet the preset condition, so that the true random number generator stops outputting random numbers. Otherwise, the photoelectric cooperative memristor continues to work, so that the true random number generator continues to output random numbers normally. In this way, real-time self-check of the true random number generator can be achieved, and the true random number generator is automatically shut down when the quality of the random number output by the true random number generator decreases, thereby improving the stability, reliability and throughput of the true random number generator, and facilitating device integration. In addition, since the photoelectric cooperative memristor works according to the lighting conditions, the potential barrier of the photoelectric cooperative memristor can be adjusted by changing the light intensity to reduce the voltage required for the photoelectric cooperative memristor to work, thereby ultimately reducing the power consumption of the photoelectric cooperative memristor.

[0072] It should be noted that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0073] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification.

[0074] In the specification, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality of components. Certain measures are recorded in different embodiments, but this does not mean that these measures cannot be combined to produce good effects.

[0075] The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.

Claims

1. A true random number generator based on photoelectric cooperative memristor, characterized in that: include: A photoelectric cooperatively controlled memristor, a light control module, a pulse generating module and a monitoring module; wherein the photoelectric cooperatively controlled memristor is electrically connected to the pulse generating module and the monitoring module respectively, and the monitoring module is also electrically connected to the light control module; The illumination control module is used to provide illumination for the photoelectric cooperatively controlled memristor according to the control of the monitoring module; The pulse generating module is used to provide a preset pulse signal to the photoelectric cooperatively controlled memristor; The photoelectric coordinated memristor is used to generate random numbers according to the preset pulse signal using the on / off of the conductive channel of the resistive layer as a random entropy source when there is light or the light meets the preset conditions, and stop generating random numbers when there is no light or the light does not meet the preset conditions; The monitoring module is used to monitor the random number output by the photoelectric cooperative memristor, and when the photoelectric cooperative memristor outputs the same random number for multiple consecutive times, send a control signal to the illumination control module to make the illumination control module turn off the illumination or provide illumination that does not meet the preset conditions.

2. The true random number generator based on photoelectric coordinated memristor according to claim 1, characterized in that: The photoelectrically coordinated memristor includes: a horizontally arranged drain terminal, a first resistive layer, a light modulation layer, a second resistive layer and a source terminal; wherein the light modulation layer is located between the first resistive layer and the second resistive layer; the drain terminal and the source terminal are respectively located at one end of the first resistive layer and the second resistive layer away from the light modulation layer; the light modulation layer is used to insulate when there is no light or the light does not meet the preset conditions, and to conduct when there is light or the light meets the preset conditions.

3. The true random number generator based on photoelectric coordinated memristor according to claim 2, characterized in that: The photoelectric cooperatively controlled memristor further comprises: a SiO2 thin film layer and a substrate; The SiO2 thin film layer is located on one side of the substrate; The drain terminal, the first resistive layer, the light modulation layer, the second resistive layer and the source terminal are horizontally distributed on a side of the SiO2 thin film layer away from the substrate.

4. The true random number generator based on photoelectric coordinated memristor according to claim 2, characterized in that: The material of the light modulation layer is a photosensitive material.

5. The true random number generator based on photoelectric coordinated memristor according to claim 2, characterized in that: One end of the first resistive layer and one end of the second resistive layer away from the light modulation layer are buried in the drain end and the source end respectively.

6. The true random number generator based on photoelectric coordinated memristor according to claim 2, characterized in that: The materials of the first resistive switching layer and the second resistive switching layer are both metal oxide materials or perovskite materials.

7. The true random number generator based on photoelectric coordinated memristor according to claim 2, characterized in that: In the horizontal direction, the length of the optical modulation layer is in the range of 4-6 um, and the lengths of the first resistive switching layer and the second resistive switching layer are both in the range of 2-3 um.

8. The true random number generator based on photoelectric coordinated memristor according to claim 2, characterized in that: The channel formed by the first resistive layer, the optical modulation layer and the second resistive layer has a length range of 8-12 um in the horizontal direction, a width range of 3-5 um, and a thickness range of 40-60 nm in the vertical direction.

9. The true random number generator based on photoelectric coordinated memristor according to claim 1, characterized in that: The illumination control module is specifically used to provide illumination of preset intensity and preset wavelength; the pulse generation module is specifically used to alternately output a preset positive voltage signal and a random negative voltage signal that varies within a preset range.

10. A method for preparing a photoelectric coordinated memristor, characterized in that: The method for preparing the optoelectronically coordinated memristor in the true random number generator based on the optoelectronically coordinated memristor as described in any one of claims 1 to 9 comprises: S1. Prepare substrate; S2, forming a SiO2 thin film layer on the substrate; S3, preparing a photosensitive material layer, and transferring the prepared photosensitive material layer onto the SiO2 thin film layer to form a light modulation layer; S4, depositing a resistive material layer on the SiO2 thin film layer, and forming a desired shape by photolithography to form a first resistive layer and a second resistive layer respectively located on both sides of the light modulation layer; S5. Prepare a drain terminal and a source terminal on the SiO2 thin film layer.

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