Laser de-bonding method and device, electronic equipment and storage medium

Abstract

The invention provides a laser de-bonding method and device, electronic equipment and a storage medium. The method comprises the following steps: determining a de-bonding area on a semiconductor substrate to be de-bonded; wherein the de-bonding area is made of an inorganic material; selecting laser parameters of a pulse laser; wherein the pulse laser comprises any one of a nanosecond laser, a picosecond laser and a femtosecond laser, and the laser parameters comprise laser wavelength and laser pulse width and frequency; and controlling the pulse laser to irradiate the de-bonding area according to the laser parameters. According to the laser de-bonding method, a nanosecond laser, a picosecond laser or a femtosecond laser is adopted to irradiate a de-bonding area on a to-be-de-bonded device, so that de-bonding treatment is carried out on the de-bonding area, and the de-bonding efficiency of taking an inorganic material as a to-be-de-bonded material is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor chip manufacturing technology, and in particular to a laser debonding method, device, electronic device and storage medium. Background Art

[0002] Laser debonding technology has become an indispensable and important method in many electronic packaging. Debonding technology is to effectively separate the substrate from the supporting carrier by modifying the adhesive material to reduce adhesion.

[0003] However, most of the current debonding technologies are only applicable to organic bonding materials, while the debonding mechanism of inorganic bonding materials in the semiconductor chip manufacturing process is very different from that of organic materials.

[0004] Therefore, there is currently a lack of efficient debonding methods for inorganic materials. Summary of the invention

[0005] The purpose of the embodiments of the present application is to provide a laser debonding method, device, electronic device and storage medium, so as to improve the efficiency of debonding of inorganic materials as the materials to be debonded.

[0006] In a first aspect, the present application provides a method for laser debonding, comprising: determining a debonding area on a semiconductor substrate to be debonded; wherein the material of the debonding area is an inorganic material; selecting laser parameters of a pulsed laser; wherein the pulsed laser comprises any one of a nanosecond laser, a picosecond laser and a femtosecond laser, and the laser parameters comprise laser wavelength, laser pulse width and frequency; and controlling the pulsed laser to irradiate the debonding area according to the laser parameters.

[0007] The above-mentioned laser debonding method uses a nanosecond laser, a picosecond laser or a femtosecond laser to irradiate the debonding area on the device to be debonded to debond the area, thereby improving the efficiency of debonding of inorganic materials as the material to be debonded.

[0008] In combination with the first aspect, optionally, the laser pulse width of the nanosecond laser is a pulse width in the range of 1 ns to 150 ns.

[0009] The above laser debonding method increases the pulse energy of the output of the nanosecond laser by specifically determining the laser pulse width of the nanosecond laser to be 1ns to 150ns, thereby further improving the debonding efficiency of inorganic materials as the materials to be debonded.

[0010] In combination with the first aspect, optionally, the laser pulse width of the picosecond laser is a pulse width in the range of 1 ps to 200 ps.

[0011] The above-mentioned laser debonding method, by specifically determining the laser pulse width of the picosecond laser to be 1ps to 200ps, has a relatively shorter pulse width, thereby reducing the diffusion of heat in the debonding area, that is, reducing the heat-affected zone during the debonding process, and ultimately reducing the adverse effects on the device to be debonded, and further improving the efficiency of debonding of inorganic materials as the material to be debonded.

[0012] In combination with the first aspect, optionally, the laser pulse width of the femtosecond laser is a pulse width in the range of 1 fs to 300 fs.

[0013] The above-mentioned laser debonding method is specifically determined as 1fs to 300fs through the laser pulse width of the femtosecond laser. Due to its shorter pulse width, the pulse energy can accurately transfer energy to the material in a very short time, further reducing the heat affected zone during the debonding process. Ultimately, on the basis of further improving the efficiency of debonding of inorganic materials as the materials to be debonded, the precision of the process during the debonding process is also improved.

[0014] In combination with the first aspect, optionally, the laser wavelength is a wavelength in the range of 1100 nm to 3000 nm.

[0015] The above-mentioned laser debonding method specifically determines the laser wavelength to be 1100nm to 3000nm, so that most materials have a relatively high absorption rate for lasers within this wavelength range, while silicon materials are transparent and not absorbed. On the basis that most materials have a relatively high absorption coefficient for lasers within the same wavelength range, in the debonding process, there is no need to frequently switch the wavelength of the output laser according to different bonding materials. This simplifies the operation of debonding different bonding materials, and ultimately further improves the efficiency of debonding inorganic materials as the materials to be debonded.

[0016] In combination with the first aspect, optionally, controlling the laser parameters of the pulse laser to irradiate the debonding area includes: controlling the laser parameters of the pulse laser and scanning the debonding area according to a preset scanning path.

[0017] The above-mentioned laser debonding method improves the flexibility of controlling the pulse laser during the debonding process of the device to be debonded by controlling the pulse laser to scan and irradiate the debonding area according to a preset scanning route, and also optimizes the energy distribution of the pulse energy in the debonding area and reduces the heat-affected zone.

[0018] In combination with the first aspect, optionally, the inorganic material includes at least one of tungsten disilicide, titanium nitride, cobalt disilicide, titanium disilicide, nickel disilicide, tantalum disilicide and molybdenum disilicide.

[0019] The above-mentioned laser debonding method adopts tungsten disilicide, titanium nitride, cobalt disilicide, titanium disilicide, nickel disilicide, tantalum disilicide and molybdenum disilicide as the materials to be debonded. Since these materials have very high absorption coefficients, they can better absorb the energy in the laser, thereby further improving the efficiency of debonding using inorganic materials as debonding materials.

[0020] In a second aspect, the present application also provides a laser debonding device, comprising: a determination module, used to determine a debonding area on a semiconductor substrate to be debonded; wherein the material of the debonding area is an inorganic material; a selection module, used to select laser parameters of a pulsed laser; wherein the pulsed laser includes any one of a nanosecond laser, a picosecond laser and a femtosecond laser, and the laser parameters include laser wavelength, laser pulse width and frequency; a control module, used to control the pulsed laser to irradiate the debonding area according to the laser parameters.

[0021] The above-mentioned laser debonding device has the same beneficial effects as the laser debonding method provided by the above-mentioned first aspect, or any optional implementation manner of the first aspect, and will not be described in detail here.

[0022] In a third aspect, the present application further provides an electronic device, comprising: a processor and a memory, wherein the memory stores machine-readable instructions executable by the processor, and when the machine-readable instructions are executed by the processor, the method described above is performed.

[0023] The above-mentioned electronic device has the same beneficial effects as the laser debonding method provided in the above-mentioned first aspect, or any optional implementation manner of the first aspect, and will not be described in detail here.

[0024] In a fourth aspect, the present application further provides a storage medium, which includes a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the method described above is executed.

[0025] The above-mentioned storage medium has the same beneficial effects as the laser debonding method provided by the above-mentioned first aspect, or any optional implementation manner of the first aspect, and will not be described in detail here.

[0026] In summary, the laser debonding method, device, electronic device and storage medium provided in the present application, by using a nanosecond laser, a picosecond laser or a femtosecond laser to irradiate the debonding area on the device to be debonded, to debond the debonding area, thereby improving the efficiency of debonding of inorganic materials as the materials to be debonded. Further, by specifically determining the laser pulse width of the nanosecond laser to be 1ns to 150ns, the pulse energy of the output of the nanosecond laser is increased, by specifically determining the laser pulse width of the picosecond laser to be 1ps to 200ps, the heat-affected zone in the debonding process is reduced, and the adverse effects on the device to be debonded are reduced, and by specifically determining the laser pulse width of the femtosecond laser to be 1fs to 300fs, the pulse energy can accurately transfer energy to the material in a very short time, further reducing the heat-affected zone in the debonding process, and finally further improving the efficiency of debonding of inorganic materials as the materials to be debonded. By specifically determining the laser wavelength to be 1100nm to 3000nm, most materials have a relatively high absorption rate for lasers within this wavelength range, but are transparent to silicon materials and are not absorbed. In the debonding process, there is no need to frequently switch the wavelength of the output laser according to different bonding materials. This simplifies the operation of debonding different bonding materials and further improves the efficiency of debonding inorganic materials as the materials to be debonded. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0028] Figure 1 A flow chart of a laser debonding method provided in an embodiment of the present application;

[0029] Figure 2 A graph showing the photothermal characteristics of some materials provided in the embodiments of the present application;

[0030] Figure 3 A graph showing the light-heat characteristics of another part of the materials provided in the embodiments of the present application;

[0031] Figure 4 A functional module diagram of a laser debonding device provided in an embodiment of the present application;

[0032] Figure 5 A schematic diagram of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0033] The following embodiments of the technical solution of the present application are described in detail in conjunction with the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application, and are therefore only used as examples, and cannot be used to limit the scope of protection of the present application.

[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0035] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise clearly and specifically defined.

[0036] Please refer to Figure 1 , Figure 1 : is a flow chart of a laser debonding method provided in an embodiment of the present application. The laser debonding method provided in an embodiment of the present application may include:

[0037] Step S120: determining a debonding region on the semiconductor substrate to be debonded, wherein the material of the debonding region is an inorganic material.

[0038] In the above step S120, the debonding area may be a pre-stored area according to the type and structure of the device to be debonded, and in the process of determining the debonding area, the specific debonding area may be determined according to the type and structure of the device to be debonded. The debonding area may also be determined by image recognition or other methods.

[0039] Step S140: Select laser parameters of a pulsed laser, wherein the pulsed laser may include any one of a nanosecond laser, a picosecond laser, and a femtosecond laser, and the laser parameters may include laser wavelength, laser pulse width, and frequency.

[0040] In the above step S140, when a nanosecond laser is used, the physical process of the debonding material to achieve debonding is that the laser energy is converted into thermal energy, the inorganic bonding material melts and partially vaporizes, destroying the bonding effect of the debonding material between the substrate and the supporting carrier. If the system uses picosecond and femtosecond laser debonding, the laser can be converted into the kinetic energy of electrons to directly vaporize and expand the debonding material to form plasma, and the vaporized debonding material naturally destroys the bonding effect between the substrate and the supporting carrier, thereby achieving debonding. Since the action time of the nanosecond laser with the debonding material is longer than the heat exchange time of the semiconductor crystal, and the energy density of a single pulse is not high enough, the action with the debonding material is manifested as an obvious thermal ablation phenomenon; the pulse width of the picosecond and femtosecond lasers is shorter, and the action time with the debonding material cannot transfer heat to the surroundings, but the huge energy density can make the debonding material quickly vaporize and diffuse to the surroundings after absorption. The huge internal stress generated in this process destroys the adhesion strength between the debonding material structure and the surrounding materials, thereby achieving debonding.

[0041] Therefore, according to the above description, it can be determined that the laser pulse width of the nanosecond laser is greater than the laser pulse width of the picosecond laser, and the laser pulse width of the picosecond laser is greater than the laser pulse width of the femtosecond laser.

[0042] Step S160: controlling the pulse laser to irradiate the debonding area according to laser parameters.

[0043] In the above step S160, the debonding area is irradiated, and the pulse laser can be controlled to directly irradiate the entire debonding area, or the pulse laser can be controlled to scan and irradiate the debonding area according to a preset scanning route.

[0044] In the above implementation process, the debonding area on the substrate to be debonded is irradiated by a nanosecond laser, a picosecond laser or a femtosecond laser to debond the area to be debonded, thereby improving the efficiency of debonding the inorganic material as the material to be debonded.

[0045] In some optional embodiments, the laser pulse width of the nanosecond laser is a pulse width in the range of 1 ns to 150 ns.

[0046] In the above implementation process, by specifically determining the laser pulse width of the nanosecond laser to be 1ns to 150ns, the pulse energy output by the nanosecond laser is increased, thereby further improving the efficiency of debonding the inorganic material as the material to be debonded.

[0047] In some optional embodiments, the laser pulse width of the picosecond laser is a pulse width in the range of 1 ps to 200 ps.

[0048] In the above implementation process, the laser pulse width of the picosecond laser is specifically determined to be 1ps to 200ps. Since its pulse width is relatively shorter, the diffusion of heat in the debonding area is reduced, that is, the heat affected area during the debonding process is reduced, and ultimately the adverse effects on the semiconductor wafer to be debonded are reduced, and the efficiency of debonding of inorganic materials as the materials to be debonded is further improved.

[0049] In some optional embodiments, the laser pulse width of the femtosecond laser is a pulse width in the range of 1 fs to 300 fs.

[0050] In the above implementation process, the laser pulse width of the femtosecond laser is specifically determined to be 1fs to 300fs. Due to its shorter pulse width, the pulse energy can accurately transfer energy to the material in a very short time, further reducing the heat affected zone in the debonding process. Ultimately, on the basis of further improving the efficiency of debonding of inorganic materials as the materials to be debonded, the accuracy of the process in the debonding process is also improved.

[0051] In some optional embodiments, the laser wavelength is a wavelength in the range of 1100 nm to 3000 nm.

[0052] Please refer to Figure 2 and Figure 3 , Figure 2 It is a light-thermal characteristic curve diagram of some materials provided in the embodiments of the present application; Figure 3 is a light-thermal characteristic curve of another part of the material provided in the embodiment of the present application. Figure 2 and Figure 3 It can be seen that most inorganic materials have relatively high absorption rates for lasers in the wavelength range of 1100nm to 3000nm.

[0053] In the above implementation process, by specifically determining the laser wavelength to be 1100nm to 3000nm, most materials have a relatively high absorption rate for lasers within this wavelength range. On the basis that most materials have a relatively high absorption rate for lasers within the same wavelength range, in the debonding process, there is no need to frequently switch the wavelength of the output laser according to different bonding materials. This simplifies the operation of debonding different bonding materials, and ultimately further improves the efficiency of debonding inorganic materials as the materials to be debonded.

[0054] In some optional implementations, step S160 may include:

[0055] Step S161: Control the pulse laser to scan the debonding area with laser parameters according to a preset scanning path.

[0056] In the above step S161 , the preset scanning path may be a serpentine, zigzag, spiral, grid or mesh type.

[0057] In the above implementation process, by controlling the pulse laser to scan and irradiate the debonding area according to a preset scanning route, the flexibility of controlling the pulse laser during the debonding process of the substrate to be debonded is improved, and the energy distribution of the pulse energy in the debonding area is optimized, thereby reducing the heat affected zone.

[0058] In some optional embodiments, the inorganic material may include at least one of tungsten disilicide, titanium nitride, cobalt disilicide, titanium disilicide, nickel disilicide, tantalum disilicide, and molybdenum disilicide.

[0059] In the above implementation process, tungsten disilicide, titanium nitride, cobalt disilicide, titanium disilicide, nickel disilicide, tantalum disilicide and molybdenum disilicide are used as the materials to be debonded. Since these materials have very high absorption coefficients, they can better absorb the energy in the laser, thereby further improving the efficiency of debonding of inorganic materials as the materials to be debonded.

[0060] Please refer to Figure 4 , Figure 4 4 is a functional module diagram of a laser debonding device 400 provided in an embodiment of the present application. Based on the same concept, an embodiment of the present application provides a laser debonding device 400, which may include: a determination module 410, which may be used to determine a debonding area on a semiconductor substrate to be debonded; wherein the material of the debonding area is an inorganic material; a selection module 420, which may be used to select laser parameters of a pulsed laser; wherein the pulsed laser may include any one of a nanosecond laser, a picosecond laser, and a femtosecond laser, and the laser parameters may include a laser wavelength and a laser pulse width; a control module 430, which may be used to control the pulsed laser to irradiate the debonding area according to the laser parameters.

[0061] In some optional embodiments, the laser pulse width of the nanosecond laser is a pulse width in the range of 1 ns to 150 ns.

[0062] In some optional embodiments, the laser pulse width of the picosecond laser is a pulse width in the range of 1 ps to 200 ps.

[0063] In some optional embodiments, the laser pulse width of the femtosecond laser is a pulse width in the range of 1 fs to 300 fs.

[0064] In some optional embodiments, the laser wavelength is a wavelength in the range of 1100 nm to 3000 nm.

[0065] As some optional implementations, in the process of controlling the pulse laser to irradiate the debonding area according to laser parameters, the control module 430 can be specifically used to control the laser parameters of the pulse laser and scan the debonding area according to a preset scanning path.

[0066] In some optional embodiments, the inorganic material may include at least one of tungsten disilicide, titanium nitride, cobalt disilicide, titanium disilicide, nickel disilicide, tantalum disilicide, and molybdenum disilicide.

[0067] It should be understood that the device corresponds to the above-mentioned laser debonding method embodiment and can perform the various steps involved in the above-mentioned method embodiment. The specific functions of the device can be found in the above description. To avoid repetition, the detailed description is appropriately omitted here. The device includes at least one software function module that can be stored in a memory in the form of software or firmware or solidified in the operating system (OS) of the device.

[0068] Please refer to Figure 5 , Figure 5 Schematic diagram of an electronic device provided by an embodiment of the present application. Based on the same concept, an embodiment of the present application provides an electronic device 500, which may include a memory 511, a storage controller 512, a processor 513, a peripheral interface 514, an input and output unit 515, and a display unit 516. A person skilled in the art can understand that Figure 5 The structure shown is only for illustration and does not limit the structure of the electronic device 500. For example, the electronic device 500 may also include Figure 5 More or fewer components as shown, or with Figure 5 Different configurations shown.

[0069] The above-mentioned memory 511, storage controller 512, processor 513, peripheral interface 514, input / output unit 515 and display unit 516 are electrically connected to each other directly or indirectly to achieve data transmission or interaction. For example, these components can be electrically connected to each other through one or more communication buses or signal lines. The above-mentioned processor 513 is used to execute the executable module stored in the memory.

[0070] The memory 511 may be, but is not limited to, a random access memory (RAM), a read only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable read-only memory (EEPROM), etc. The memory 511 is used to store programs, and the processor 513 executes the program after receiving the execution instruction. The method executed by the electronic device 500 defined by the process disclosed in any embodiment of the present application can be applied to the processor 513, or implemented by the processor 513.

[0071] The processor 513 may be an integrated circuit chip with signal processing capability. The processor 513 may be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it may also be a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components. The methods, steps and logic block diagrams disclosed in the embodiments of the present application may be implemented or executed. The general-purpose processor may be a microprocessor or the processor may also be any conventional processor, etc.

[0072] The above-mentioned peripheral interface 514 couples various input / output devices to the processor 513 and the memory 511. In some embodiments, the peripheral interface 514, the processor 513 and the memory controller 512 can be implemented in a single chip. In some other examples, they can be implemented by separate chips.

[0073] The input / output unit 515 is used to provide input data to the user, and can be, but not limited to, a mouse and a keyboard.

[0074] The above-mentioned display unit 516 provides an interactive interface (such as a user operation interface) between the electronic device 500 and the user or is used to display image data for the user's reference. In an embodiment of the present application, the display unit may be a liquid crystal display or a touch display. If it is a touch display, it may be a capacitive touch screen or a resistive touch screen that supports single-point and multi-point touch operations. Supporting single-point and multi-point touch operations means that the touch display can sense touch operations generated simultaneously from one or more positions on the touch display, and the sensed touch operations are handed over to the processor for calculation and processing.

[0075] The electronic device 500 in the embodiment of the present application can be used to execute each step in each method provided in the embodiment of the present application.

[0076] Based on the same concept, an embodiment of the present application further provides a storage medium, which includes a computer-readable storage medium. The computer-readable storage medium stores a computer program, and the computer program executes the above method when executed by a processor.

[0077] Among them, the computer-readable storage medium can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (Static Random Access Memory, referred to as SRAM), electrically erasable programmable read-only memory (Electrically Erasable Programmable Read-Only Memory, referred to as EEPROM), erasable programmable read-only memory (Erasable Programmable Read Only Memory, referred to as EPROM), programmable read-only memory (Programmable Red-Only Memory, referred to as PROM), read-only memory (Read-Only Memory, referred to as ROM), magnetic storage, flash memory, magnetic disk or optical disk.

[0078] In summary, the laser debonding method, device, electronic device and storage medium provided in each embodiment of the present application, by using a nanosecond laser, a picosecond laser or a femtosecond laser to irradiate the debonding area on the substrate to be debonded, to debond the debonding area, thereby improving the efficiency of debonding of inorganic materials as the materials to be debonded. Further, by specifically determining the laser pulse width of the nanosecond laser to be 1ns to 150ns, the pulse energy of the output of the nanosecond laser is increased, by specifically determining the laser pulse width of the picosecond laser to be 1ps to 200ps, the heat-affected zone in the debonding process is reduced, and the adverse effects on the device to be debonded are reduced, and by specifically determining the laser pulse width of the femtosecond laser to be 1fs to 300fs, the pulse energy can accurately transfer energy to the material in a very short time, further reducing the heat-affected zone in the debonding process, and finally further improving the efficiency of debonding of inorganic materials as the materials to be debonded. The laser wavelength is specifically determined to be 1100nm to 3000nm, so that most debonding materials have a relatively high absorption rate for lasers within this wavelength range. In the debonding process, there is no need to frequently switch the wavelength of the output laser according to different bonding materials. This simplifies the operation of debonding different bonding materials and further improves the efficiency of debonding inorganic materials as the material to be debonded.

[0079] In several embodiments provided by the embodiments of the present application, it should be understood that the disclosed devices and methods can also be implemented in other ways. The device embodiments described above are merely schematic. For example, the flowcharts and block diagrams in the accompanying drawings show the possible architecture, functions and operations of the devices, methods and computer program products according to the multiple embodiments of the embodiments of the present application. In this regard, each box in the flowchart or block diagram can represent a module, a program segment or a part of the code, and a part of the module, program segment or code contains one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order than the order marked in the accompanying drawings. For example, two consecutive boxes can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flowchart, and the combination of boxes in the block diagram and / or flowchart can be implemented with a dedicated hardware-based system that performs a specified function or action, or can be implemented with a combination of dedicated hardware and computer instructions.

[0080] In addition, the functional modules in each embodiment of the present application can be integrated together to form an independent part, or each module can exist separately, or two or more modules can be integrated to form an independent part.

[0081] The above description is only an optional implementation manner of the embodiments of the present application, but the protection scope of the embodiments of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or replacements within the technical scope disclosed in the embodiments of the present application, which should be covered within the protection scope of the embodiments of the present application.

Claims

1. A laser debonding method, characterized in that: include: Determining a debonding region on a semiconductor substrate to be debonded; wherein the material of the debonding region is an inorganic material; Selecting laser parameters of a pulsed laser; wherein the pulsed laser includes any one of a nanosecond laser, a picosecond laser and a femtosecond laser, and the laser parameters include laser wavelength and laser pulse width and frequency; The pulse laser is controlled to irradiate the debonding area according to the laser parameters.

2. The method according to claim 1, characterized in that in, The laser pulse width of the nanosecond laser is a pulse width in the range of 1 ns to 150 ns.

3. The method according to claim 1, characterized in that in, The laser pulse width of the picosecond laser is in the range of 1 ps to 200 ps.

4. The method according to claim 1, characterized in that: in, The laser pulse width of the femtosecond laser is within a range of 1 fs to 300 fs.

5. The method according to claim 1, characterized in that in, The laser wavelength is within the range of 1100nm to 3000nm.

6. The method according to claim 1, characterized in that The controlling the pulse laser to irradiate the debonding area according to the laser parameters includes: The pulse laser is controlled to scan the debonding area with the laser parameters according to a preset scanning path.

7. The method according to claim 1, characterized in that in, The inorganic material includes at least one of tungsten disilicide, titanium nitride, cobalt disilicide, titanium disilicide, nickel disilicide, tantalum disilicide and molybdenum disilicide.

8. A laser debonding device, characterized in that: include: A determination module, used for determining a debonding region on a semiconductor substrate to be debonded; wherein the material of the debonding region is an inorganic material; A selection module is used to select laser parameters of a pulsed laser; wherein the pulsed laser includes any one of a nanosecond laser, a picosecond laser and a femtosecond laser, and the laser parameters include laser wavelength and laser pulse width and frequency; A control module is used to control the pulse laser to irradiate the debonding area according to the laser parameters.

9. An electronic device, characterized in that: include: A processor and a memory, wherein the memory stores machine-readable instructions executable by the processor, and when the machine-readable instructions are executed by the processor, the method according to any one of claims 1 to 7 is performed.

10. A storage medium, characterized in that: The storage medium comprises a computer-readable storage medium; a computer program is stored on the computer-readable storage medium, and the computer program executes the method according to any one of claims 1 to 7 when executed by a processor.

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