Semiconductor light-emitting element with high lateral current expansion layer

Abstract

The invention discloses a semiconductor light-emitting element with a high transverse current expansion layer, which sequentially comprises a substrate, an n-type semiconductor, a quantum well, an electron blocking layer, a p-type semiconductor and the high transverse current expansion layer from bottom to top, and is characterized in that the thickness of the high transverse current expansion layer is 0.1-500nm; and the high lateral current expansion layer is any one or any combination of an InGaN / AlGaN superlattice, a GaN / AlInGaN superlattice, a GaN / AlGaN superlattice and an AlInGaN / AlGaN superlattice. According to the invention, the interface Philips ionization steep degree and the interface Philips ionization uniformity of the high lateral current expansion layer and the p-type semiconductor and the high lateral current expansion layer and the metal electrode material are regulated and controlled, the interface state and the interface resistance of the high lateral current expansion layer are reduced, and the interface conductivity of the high lateral current expansion layer is improved; the voltage of the light-emitting diode is reduced.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor light-emitting element with a high lateral current expansion layer. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor ultraviolet lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes. 1) Lasers are generated by stimulated radiation from carriers, with a small half-width spectrum and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes emit spontaneous radiation, and the output power of a single light-emitting diode is in the mW level. 2) The current density of the laser is as high as KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect; 3) The light-emitting diode spontaneously radiates, without external influence, and is incoherent light that transitions from high energy level to low energy level, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in energy levels of the electron transition, generating photons and induced photons with identical coherent light; 4) The principles are different: the light-emitting diode is under the action of external voltage, and the electron-hole transition to the active layer or pn junction generates radiation recombination and luminescence, while the laser needs the lasing conditions to be met before it can be lased, and the carrier inversion distribution in the active area must be met. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0004] Nitride semiconductor ultraviolet lasers have the following problems: after the laser emits stable laser saturation, the quasi-Fermi levels of holes and electrons are pinned, the injected carriers are completely converted into photon output, the optical gain reaches saturation, the junction voltage also reaches saturation, and the carrier concentration in the cavity does not change with the current. The symmetry breaking corresponding to the phase transition of the active layer away from the equilibrium state causes the laser to be discontinuous or sudden at the threshold, such as the Kink problem of the IV curve and the jump of the fast axis divergence angle. The quantum well confinement factor is small, and the light field diffuses longitudinally, resulting in problems such as a large fast axis divergence angle. Summary of the invention

[0005] The present invention provides a semiconductor light-emitting element with a high lateral current extension layer, which regulates the steepness of the interface Philips ionization degree and the uniformity of the interface Philips ionization degree between the high lateral current extension layer and a p-type semiconductor and between the high lateral current extension layer and a metal electrode material, reduces the interface state and interface resistance of the high lateral current extension layer, improves the interface conductivity of the high lateral current extension layer, and reduces the voltage of the light-emitting diode.

[0006] The present invention provides a semiconductor light-emitting element with a high lateral current extension layer, which comprises, from bottom to top, a substrate, an n-type semiconductor, a quantum well, an electron blocking layer, a p-type semiconductor and a high lateral current extension layer, wherein the thickness of the high lateral current extension layer is 0.1 to 500 nm, and the high lateral current extension layer is any one or any combination of InGaN, InN, AlInN, GaN, AlGaN, AlInGaN, AlN, InGaN / GaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlGaN superlattice, and AlInGaN / AlGaN superlattice.

[0007] Preferably, the rising angle of the valley position of the Philips ionization degree of the high lateral current extension layer toward the surface is α, the rising angle of the valley position of the Philips ionization degree of the high lateral current extension layer toward the quantum well is β, and the rising angle of the valley position of the Philips ionization degree of the p-type semiconductor toward the surface is γ, wherein: 10°≤γ≤β≤α≤90°;

[0008] The peak position of the thermal expansion coefficient of the high lateral current extension layer decreases at an angle θ toward the surface, the peak position of the thermal expansion coefficient of the high lateral current extension layer decreases at an angle δ toward the quantum well, and the peak position of the thermal expansion coefficient of the p-type semiconductor decreases at an angle σ toward the surface, wherein: 20°≤σ≤δ≤θ≤90°;

[0009] The peak position of the piezoelectric polarization coefficient of the high lateral current extension layer decreases at an angle of φ toward the surface, the peak position of the piezoelectric polarization coefficient of the high lateral current extension layer decreases at an angle of ψ toward the quantum well, and the peak position of the piezoelectric polarization coefficient of the p-type semiconductor decreases at an angle of μ toward the surface, wherein: 25°≤μ≤ψ≤φ≤90°;

[0010] The rising angle of the valley position of the spontaneous polarization coefficient of the high lateral current extension layer toward the surface is υ, the rising angle of the valley position of the spontaneous polarization coefficient of the high lateral current extension layer toward the quantum well direction is ρ, and the rising angle of the valley position of the spontaneous polarization coefficient of the p-type semiconductor toward the surface direction is ω, wherein: 30°≤ω≤ρ≤υ≤90°.

[0011] Preferably, the rising angle of the valley position of the Philips ionization degree and spontaneous polarization coefficient of the high lateral current extension layer toward the surface and the descending angle of the peak position of the thermal expansion coefficient and piezoelectric polarization coefficient of the high lateral current extension layer toward the surface have the following relationship: 10°≤α≤θ≤φ≤υ≤90°;

[0012] The rising angle of the valley position of the Philips ionization degree and spontaneous polarization coefficient of the high lateral current extension layer toward the quantum well, and the descending angle of the peak position of the thermal expansion coefficient and piezoelectric polarization coefficient of the high lateral current extension layer toward the quantum well have the following relationship: 10°≤β≤δ≤ψ≤ρ≤90°;

[0013] The rising angle of the valley position of the Philips ionization degree and spontaneous polarization coefficient of the p-type semiconductor toward the surface and the falling angle of the peak position of the thermal expansion coefficient and piezoelectric polarization coefficient of the p-type semiconductor toward the surface have the following relationship: 10°≤γ≤σ≤μ≤ω≤90°.

[0014] Preferably, the rising angle of the valley position of the Philips ionization degree and spontaneous polarization coefficient of the high lateral current extension layer toward the surface, and the descending angle of the peak position of the thermal expansion coefficient and piezoelectric polarization coefficient of the high lateral current extension layer toward the surface, the rising angle of the valley position of the Philips ionization degree and spontaneous polarization coefficient of the high lateral current extension layer toward the quantum well direction, and the descending angle of the peak position of the thermal expansion coefficient and piezoelectric polarization coefficient of the high lateral current extension layer toward the quantum well direction, the rising angle of the valley position of the Philips ionization degree and spontaneous polarization coefficient of the p-type semiconductor toward the surface, and the descending angle of the peak position of the thermal expansion coefficient and piezoelectric polarization coefficient of the p-type semiconductor toward the surface have the following relationship: 10°≤γ≤σ≤μ≤ω≤β≤δ≤ψ≤ρ≤α≤θ≤φ≤υ≤90°.

[0015] Preferably, the Philips ionization degree distribution of the high lateral current extension layer has a function y=D+E*xlnx curve distribution; the spontaneous polarization coefficient distribution of the high lateral current extension layer has a function y=F+G*xlnx curve distribution; the thermal expansion coefficient distribution of the high lateral current extension layer has a function y=H+J*lnx-e x Curve distribution; the piezoelectric polarization coefficient distribution of the high lateral current extension layer has a function y = K + L * lnx-e x Curve distribution; where: F≤D≤K≤H.

[0016] Preferably, the quantum well is a periodic structure composed of a well layer and a barrier layer, and the well layer of the quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond. The layer thickness is 5 to 200 angstroms; the barrier layer of the quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the barrier layer thickness is 10 to 400 angstroms.

[0017] Preferably, the n-type semiconductor, electron blocking layer, and p-type semiconductor include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; the thickness of the n-type semiconductor is 5 to 60,000 angstroms; the thickness of the p-type semiconductor is 10 to 9,000 angstroms.

[0018] Preferably, the substrate comprises sapphire, diamond, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN xAny one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0019] Compared with the prior art, the semiconductor light-emitting element with a high lateral current extension layer provided by the embodiment of the present invention has the beneficial effect that: the present invention regulates the steepness and uniformity of the interface Philips ionization between the high lateral current extension layer and the p-type semiconductor and between the high lateral current extension layer and the metal electrode material, reduces the interface state and interface resistance of the high lateral current extension layer, improves the interface conductivity of the high lateral current extension layer, and reduces the voltage of the light-emitting diode. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a schematic structural diagram of a semiconductor light-emitting element with a high lateral current spreading layer according to an embodiment of the present invention;

[0021] Figure 2 This is a SIMS secondary ion mass spectrum of a semiconductor light-emitting element with a high lateral current spreading layer according to an embodiment of the present invention;

[0022] Figure 3 This is a SIMS secondary ion mass spectrum of a semiconductor light-emitting element having a high lateral current spreading layer according to an embodiment of the present invention (partially enlarged view);

[0023] Figure 4 This is a transmission electron microscope TEM image (p-type region) of a semiconductor light-emitting element with a high lateral current spreading layer according to an embodiment of the present invention;

[0024] Figure 5 It is a transmission electron microscope TEM image (quantum well) of a semiconductor light-emitting element with a high lateral current spreading layer according to an embodiment of the present invention;

[0025] Figure 6 It is a transmission electron microscope TEM image (quantum well) of a semiconductor light-emitting element with a high lateral current spreading layer according to an embodiment of the present invention;

[0026] Figure 7 It is a transmission electron microscope TEM image (quantum well) of a semiconductor light-emitting element with a high lateral current spreading layer according to an embodiment of the present invention;

[0027] Reference numerals: 100: substrate, 101: n-type semiconductor, 102: quantum well, 103: electron blocking layer, 104: p-type semiconductor, 105: high lateral current spreading layer. DETAILED DESCRIPTION

[0028] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] In order to solve the above problems, a semiconductor light-emitting element with a high lateral current spreading layer provided in an embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0030] Reference Figure 1-7 The present invention provides a semiconductor light-emitting element with a high lateral current extension layer, which comprises, from bottom to top, a substrate 100, an n-type semiconductor 101, a quantum well 102, an electron blocking layer 103, a p-type semiconductor 104 and a high lateral current extension layer 105, characterized in that the thickness of the high lateral current extension layer 105 is 0.1 to 500 nm, and the high lateral current extension layer 105 is any one or any combination of InGaN, InN, AlInN, GaN, AlGaN, AlInGaN, AlN, InGaN / GaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlGaN superlattice, and AlInGaN / AlGaN superlattice.

[0031] The rising angle of the valley position of the Philips ionization degree of the high lateral current extension layer 105 toward the surface is α, the rising angle of the valley position of the Philips ionization degree of the high lateral current extension layer 105 toward the quantum well 102 is β, and the rising angle of the valley position of the Philips ionization degree of the p-type semiconductor 104 toward the surface is γ, wherein: 10°≤γ≤β≤α≤90°;

[0032] The peak position of the thermal expansion coefficient of the high lateral current extension layer 105 decreases at an angle θ toward the surface, the peak position of the thermal expansion coefficient of the high lateral current extension layer 105 decreases at an angle δ toward the quantum well 102, and the peak position of the thermal expansion coefficient of the p-type semiconductor 104 decreases at an angle σ toward the surface, wherein: 20°≤σ≤δ≤θ≤90°;

[0033] The peak position of the piezoelectric polarization coefficient of the high lateral current extension layer 105 decreases at an angle of φ toward the surface, the peak position of the piezoelectric polarization coefficient of the high lateral current extension layer 105 decreases at an angle of ψ toward the quantum well 102, and the peak position of the piezoelectric polarization coefficient of the p-type semiconductor 104 decreases at an angle of μ toward the surface, wherein: 25°≤μ≤ψ≤φ≤90°;

[0034] The rising angle of the valley position of the spontaneous polarization coefficient of the high lateral current extension layer 105 toward the surface is υ, the rising angle of the valley position of the spontaneous polarization coefficient of the high lateral current extension layer 105 toward the quantum well 102 is ρ, and the rising angle of the valley position of the spontaneous polarization coefficient of the p-type semiconductor 104 toward the surface is ω, wherein: 30°≤ω≤ρ≤υ≤90°.

[0035] The rising angle of the valley position of the Philips ionization degree and spontaneous polarization coefficient of the high transverse current spreading layer 105 toward the surface and the descending angle of the peak position of the thermal expansion coefficient and piezoelectric polarization coefficient of the high transverse current spreading layer 105 toward the surface have the following relationship: 10°≤α≤θ≤φ≤υ≤90°;

[0036] The rising angle of the valley position of the Philips ionization degree and spontaneous polarization coefficient of the high transverse current extension layer 105 toward the quantum well 102, and the falling angle of the peak position of the thermal expansion coefficient and piezoelectric polarization coefficient of the high transverse current extension layer 105 toward the quantum well 102 have the following relationship: 10°≤β≤δ≤ψ≤ρ≤90°;

[0037] The rising angle of the valley position of the Philips ionization degree and spontaneous polarization coefficient of the p-type semiconductor 104 toward the surface and the falling angle of the peak position of the thermal expansion coefficient and piezoelectric polarization coefficient of the p-type semiconductor 104 toward the surface have the following relationship: 10°≤γ≤σ≤μ≤ω≤90°.

[0038] In summary, the rising angle of the valley position of the Philips ionization degree and spontaneous polarization coefficient of the high lateral current extension layer 105 toward the surface, and the descending angle of the peak position of the thermal expansion coefficient and piezoelectric polarization coefficient of the high lateral current extension layer 105 toward the surface, the rising angle of the valley position of the Philips ionization degree and spontaneous polarization coefficient of the high lateral current extension layer 105 toward the quantum well 102, and the descending angle of the peak position of the thermal expansion coefficient and piezoelectric polarization coefficient of the high lateral current extension layer 105 toward the quantum well 102, the rising angle of the valley position of the Philips ionization degree and spontaneous polarization coefficient of the p-type semiconductor 104 toward the surface, and the descending angle of the peak position of the thermal expansion coefficient and piezoelectric polarization coefficient of the p-type semiconductor 104 toward the surface have the following relationship: 10°≤γ≤σ≤μ≤ω≤β≤δ≤ψ≤ρ≤α≤θ≤φ≤υ≤90°.

[0039] The Philips ionization degree distribution of the high transverse current extension layer 105 has a function y=D+E*xlnx curve distribution; the spontaneous polarization coefficient distribution of the high transverse current extension layer 105 has a function y=F+G*xlnx curve distribution; the thermal expansion coefficient distribution of the high transverse current extension layer 105 has a function y=H+J*lnx-e x Curve distribution; The piezoelectric polarization coefficient distribution of the high lateral current extension layer 105 has a function y = K + L * lnx-e x Curve distribution; where: F≤D≤K≤H.

[0040] In summary, the present invention regulates the steepness of the interface Philips ionization and the uniformity of the interface Philips ionization between the high lateral current extension layer 105 and the p-type semiconductor 104 and the high lateral current extension layer 105 and the metal electrode material, reduces the interface state and interface resistance of the high lateral current extension layer, improves the interface conductivity of the high lateral current extension layer, and reduces the voltage of the light-emitting diode. At the same time, the steepness of the interface thermal expansion coefficient, the steepness of the interface spontaneous polarization coefficient, and the steepness and uniformity of the interface piezoelectric polarization coefficient between the high lateral current extension layer 105 and the p-type semiconductor 104 and the high lateral current extension layer and the metal electrode material are regulated to reduce the interface thermal expansion stress fluctuation and polarization fluctuation, improve the interface thermal expansion stress uniformity and polarization uniformity, and reduce the aging voltage change. The 1000H aging voltage change amplitude is reduced from + / -0.5~1V to + / -0~0.5V, and the voltage value is reduced from 2.95~3.2V to 2.75~2.95V.

[0041] In the present invention, the quantum well 102 is a periodic structure composed of a well layer and a barrier layer, and the well layer of the quantum well 102 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond. , the well layer thickness is 5 to 200 angstroms; the barrier layer of the quantum well 102 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the barrier layer thickness is 10 to 400 angstroms.

[0042] In the present invention, the n-type semiconductor 101, the electron blocking layer 103, and the p-type semiconductor 104 include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; the thickness of the n-type semiconductor is 5 to 60,000 angstroms; the thickness of the p-type semiconductor is 10 to 9,000 angstroms.

[0043] In the present invention, the substrate 100 includes sapphire, diamond, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN xAny one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0044] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A semiconductor light emitting element having a high lateral current spreading layer, comprising, from bottom to top, a substrate (100), an n-type semiconductor (101), a quantum well (102), an electron blocking layer (103), a p-type semiconductor (104) and a high lateral current spreading layer (105), characterized in that: The thickness of the high lateral current extension layer (105) is 0.1-500 nm, and the high lateral current extension layer (105) is any one or any combination of InGaN, InN, AlInN, GaN, AlGaN, AlInGaN, AlN, InGaN / GaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlGaN superlattice, and AlInGaN / AlGaN superlattice.

2. A semiconductor light emitting element with a high lateral current spreading layer according to claim 1, characterized in that: The rising angle of the valley position of the Philips ionization degree of the high lateral current extension layer (105) toward the surface is α, the rising angle of the valley position of the Philips ionization degree of the high lateral current extension layer (105) toward the quantum well (102) is β, and the rising angle of the valley position of the Philips ionization degree of the p-type semiconductor (104) toward the surface is γ, wherein: 10°≤γ≤β≤α≤90°.

3. The semiconductor light emitting element with a high lateral current spreading layer according to claim 1, characterized in that: The peak position of the thermal expansion coefficient of the high lateral current expansion layer (105) decreases at an angle θ toward the surface, the peak position of the thermal expansion coefficient of the high lateral current expansion layer (105) decreases at an angle δ toward the quantum well (102), and the peak position of the thermal expansion coefficient of the p-type semiconductor (104) decreases at an angle σ toward the surface, wherein: 20°≤σ≤δ≤θ≤90°.

4. The semiconductor light emitting element with a high lateral current spreading layer according to claim 1, characterized in that: The peak position of the piezoelectric polarization coefficient of the high lateral current expansion layer (105) decreases at an angle φ toward the surface, the peak position of the piezoelectric polarization coefficient of the high lateral current expansion layer (105) decreases at an angle ψ toward the quantum well (102), and the peak position of the piezoelectric polarization coefficient of the p-type semiconductor (104) decreases at an angle μ toward the surface, wherein: 25°≤μ≤ψ≤φ≤90°.

5. The semiconductor light emitting element with a high lateral current spreading layer according to claim 1, characterized in that: The rising angle of the valley position of the spontaneous polarization coefficient of the high transverse current expansion layer (105) toward the surface is υ, the rising angle of the valley position of the spontaneous polarization coefficient of the high transverse current expansion layer (105) toward the quantum well (102) is ρ, and the rising angle of the valley position of the spontaneous polarization coefficient of the p-type semiconductor (104) toward the surface is ω, wherein: 30°≤ω≤ρ≤υ≤90°.

6. A semiconductor light emitting element with a high lateral current spreading layer according to any one of claims 2 to 5, characterized in that: The Philips ionization degree and the rising angle of the valley position of the spontaneous polarization coefficient of the high transverse current spreading layer (105) toward the surface and the descending angle of the peak position of the thermal expansion coefficient and the piezoelectric polarization coefficient of the high transverse current spreading layer (105) toward the surface have the following relationship: 10°≤α≤θ≤φ≤υ≤90°; The rising angle of the valley position of the Philips ionization degree and spontaneous polarization coefficient of the high transverse current extension layer (105) toward the quantum well (102), and the falling angle of the peak position of the thermal expansion coefficient and piezoelectric polarization coefficient of the high transverse current extension layer (105) toward the quantum well (102) have the following relationship: 10°≤β≤δ≤ψ≤ρ≤90°; The Philips ionization degree and the rising angle of the valley position of the spontaneous polarization coefficient of the p-type semiconductor (104) toward the surface and the falling angle of the peak position of the thermal expansion coefficient and the piezoelectric polarization coefficient of the p-type semiconductor (104) toward the surface have the following relationship: 10°≤γ≤σ≤μ≤ω≤90°.

7. The semiconductor light emitting element with a high lateral current spreading layer according to claim 6, characterized in that: The rising angle of the valley position of the Philips ionization degree and spontaneous polarization coefficient of the high transverse current extension layer (105) toward the surface, and the falling angle of the peak position of the thermal expansion coefficient and piezoelectric polarization coefficient of the high transverse current extension layer (105) toward the surface, the rising angle of the valley position of the Philips ionization degree and spontaneous polarization coefficient of the high transverse current extension layer (105) toward the quantum well (102), and the falling angle of the peak position of the thermal expansion coefficient and piezoelectric polarization coefficient of the high transverse current extension layer (105) toward the quantum well (102), the rising angle of the valley position of the Philips ionization degree and spontaneous polarization coefficient of the p-type semiconductor (104) toward the surface, and the falling angle of the peak position of the thermal expansion coefficient and piezoelectric polarization coefficient of the p-type semiconductor (104) toward the surface have the following relationship: 10°≤γ≤σ≤μ≤ω≤β≤δ≤ψ≤ρ≤α≤θ≤φ≤υ≤90°.

8. The semiconductor light emitting element with a high lateral current spreading layer according to claim 1, characterized in that: The Philips ionization degree distribution of the high transverse current extension layer (105) has a function y=D+E*xlnx curve distribution; the spontaneous polarization coefficient distribution of the high transverse current extension layer (105) has a function y=F+G*xlnx curve distribution; the thermal expansion coefficient distribution of the high transverse current extension layer (105) has a function y=H+J*lnx-e x Curve distribution; the piezoelectric polarization coefficient distribution of the high lateral current extension layer (105) has a function y=K+L*lnx-e x Curve distribution; where: F≤D≤K≤H.

9. The semiconductor light emitting element with a high lateral current spreading layer according to claim 1, characterized in that: The quantum well (102) is a periodic structure composed of a well layer and a barrier layer. The well layer of the quantum well (102) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond. The layer thickness is 5 to 200 angstroms; the barrier layer of the quantum well (102) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the barrier layer thickness is 10 to 400 angstroms.

10. The semiconductor light emitting element with a high lateral current spreading layer according to claim 1, characterized in that: The n-type semiconductor (101), the electron blocking layer (103), and the p-type semiconductor (104) include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; the thickness of the n-type semiconductor is 5 to 60,000 angstroms; the thickness of the p-type semiconductor is 10 to 9,000 angstroms.

11. The semiconductor light emitting element with a high lateral current spreading layer according to claim 1, characterized in that: The substrate (100) includes sapphire, diamond, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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