Sintered ceramic substrate, light-emitting device, and method for producing same

Abstract

A method for producing a sintered ceramic substrate, the method comprising: preparing a ceramic substrate (1) in which a through-hole (2) is formed before firing (S11), disposing a first metal paste (3) in the through-hole (S12), and firing the ceramic substrate in which the first metal paste is disposed (S14), the first metal paste including a plurality of first metal powders (4) and a plurality of active metal powders (50) in the step of disposing the first metal paste; the first metal powder has a metal powder (4a) that serves as a core and a coating metal member (40b) that has a melting point lower than that of the metal powder and coats at least a portion of the metal powder, and in the step of firing the ceramic substrate, the firing temperature is 700 DEG C or more and lower than the melting point of the metal powder.

Description

Technical Field

[0001] The present disclosure relates to a ceramic sintered body substrate, a light emitting device, and methods for manufacturing the same. Background Art

[0002] Conventionally, the via hole material used in the ceramic substrate has a through conductor mainly composed of silver and copper, and it is known that the through conductor has a eutectic region of silver and copper in the metal layer side region of the central region of the aperture, and a non-eutectic region of silver and copper in the central region of the central region of the aperture. In addition, it is known that the via hole material used in the ceramic substrate is filled with a first metal paste and a second metal paste is laminated at a position in contact with the first metal paste, the first metal paste containing a metal (B) powder having a higher melting point than the metal (A) having a melting point of 600° C. to 1100° C. and an active metal, and the second metal paste contains a powder of the metal (A) (for example, refer to Patent Documents 1 and 2).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent No. 6122561

[0006] Patent Document 2: Japanese Patent No. 5922739 Summary of the invention

[0007] Problems to be solved by the invention

[0008] An object of the embodiments of the present disclosure is to provide a ceramic sintered body substrate and a light emitting device with high reliability, and a method for manufacturing the same.

[0009] Solution to the problem

[0010] The manufacturing method of the ceramic sintered substrate disclosed in the embodiment includes: preparing a ceramic substrate with through holes formed therein before firing, configuring a first metal paste in the through holes, and firing the ceramic substrate configured with the first metal paste. In the step of configuring the first metal paste, the first metal paste includes a plurality of first metal powders and a plurality of active metal powders. The first metal powder has a metal powder serving as a core, and a coating metal component having a melting point lower than that of the metal powder and coating at least a portion of the metal powder. In the step of firing the ceramic substrate, the firing temperature is a temperature not less than 700°C and lower than the melting point of the metal powder.

[0011] In addition, the manufacturing method of the light-emitting device disclosed in the embodiment includes: preparing a ceramic sintered substrate manufactured by the above-mentioned ceramic sintered substrate manufacturing method, and configuring a light-emitting element on the above-mentioned ceramic sintered substrate, in the process of preparing the above-mentioned ceramic sintered substrate, the above-mentioned first metal paste becomes a first metal body by sintering, and in the process of configuring the above-mentioned light-emitting element, the above-mentioned first metal body configured in the above-mentioned through hole is directly or indirectly electrically connected to the above-mentioned light-emitting element.

[0012] In addition, the manufacturing method of the light-emitting device disclosed in the embodiment includes: preparing a ceramic sintered substrate manufactured by the above-mentioned ceramic sintered substrate manufacturing method, and configuring a light-emitting element on the above-mentioned ceramic sintered substrate, in the process of preparing the above-mentioned ceramic sintered substrate, the above-mentioned first metal paste becomes a first metal body by firing, and the above-mentioned conductive paste becomes a conductor, and in the process of configuring the above-mentioned light-emitting element, the above-mentioned first metal body or the above-mentioned conductor configured in the above-mentioned through hole is directly or indirectly electrically connected to the above-mentioned light-emitting element.

[0013] In addition, the ceramic sintered body substrate disclosed in the embodiment comprises: a ceramic substrate having a through hole, and a first metal body arranged in the above-mentioned through hole, the above-mentioned first metal body contains: a plurality of metal powders, a second metal, and a metal compound, the above-mentioned metal powder has a higher melting point than the above-mentioned second metal and is dispersed in the continuous above-mentioned second metal, the above-mentioned ceramic substrate has a reaction layer of the above-mentioned metal compound on the inner wall of the above-mentioned through hole, and has a reaction product of the above-mentioned metal compound at the grain boundary of the above-mentioned metal powder.

[0014] Furthermore, a light emitting device disclosed in an embodiment includes: the above-mentioned ceramic sintered body substrate; and a light emitting element electrically connected to the above-mentioned first metal body of the above-mentioned ceramic sintered body substrate.

[0015] Effects of the Invention

[0016] According to the embodiments of the present disclosure, it is possible to provide a ceramic sintered body substrate and a light emitting device with high reliability, and methods for manufacturing the same. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a plan view schematically showing a ceramic sintered body substrate according to the embodiment.

[0018] Figure 2 It is schematically shown Figure 1 A sectional perspective view of a cross section taken along line II-II.

[0019] Figure 3A This is an enlarged cross-sectional view schematically showing an enlarged state in which the first metal paste is arranged in the through-hole of the sintered ceramic substrate according to the embodiment.

[0020] Figure 3B It is a schematic diagram showing Figure 3A An enlarged cross-sectional view of the state of the first metal body after sintering the ceramic sintered substrate.

[0021] Figure 4A This is a scanning electron microscope photograph showing an enlarged view of the first metal body provided in the through-hole of the sintered ceramic substrate according to the embodiment.

[0022] Figure 4B This is a scanning electron microscope photograph showing an enlarged view of the first metal body provided in the through-hole of the sintered ceramic substrate according to the embodiment.

[0023] Figure 5 This is a flowchart illustrating a method for producing a sintered ceramic substrate according to an embodiment.

[0024] Fig. 6A It is a cross-sectional view schematically showing a ceramic substrate prepared in the method for producing a sintered ceramic substrate according to the embodiment.

[0025] Figure 6B It is a cross-sectional view schematically showing a state where the first metal paste is arranged in the through-hole in the method for producing a sintered ceramic substrate according to the embodiment.

[0026] Figure 6C It is a cross-sectional view schematically showing a state where a conductive paste is arranged in the method for producing a sintered ceramic substrate according to the embodiment.

[0027] Figure 7 is a cross-sectional view schematically showing a light emitting device according to an embodiment.

[0028] Figure 8 is a flowchart illustrating a method for manufacturing a light emitting device according to an embodiment.

[0029] Fig. 9A This is a cross-sectional view schematically showing a ceramic sintered body substrate prepared in the method for manufacturing a light emitting device according to the embodiment.

[0030] Fig. 9B This is a cross-sectional view schematically showing a state in which a bonding member is arranged on a ceramic sintered body substrate in a method for manufacturing a light emitting device according to an embodiment.

[0031] Fig. 9C This is a cross-sectional view schematically showing a state where light-emitting elements are arranged in a method for manufacturing a light-emitting device according to an embodiment.

[0032] Fig.9D It is a cross-sectional view schematically showing a state where a light reflecting member is arranged in the method for manufacturing a light emitting device according to the embodiment.

[0033] Fig. 10AIt is a perspective view showing the light emitting device according to the embodiment as a light emitting module.

[0034] Fig. 10B is omitted Fig. 10A A cross-sectional view schematically shows a portion of the cross section taken along line XB-XB.

[0035] Explanation of symbols

[0036] 1Ceramic substrate

[0037] 2 Through Holes

[0038] 3.1 Metal Paste

[0039] 3a 1st metal body

[0040] 4.1 Metal Powder

[0041] 4a Metal powder

[0042] 4b Second Metal

[0043] 40b Cladding metal components

[0044] 50Active metal powder

[0045] 5 Metal compounds

[0046] 5a Reaction layer of metal compound

[0047] 5b Reaction products of metal compounds

[0048] 6 Organic binders

[0049] 7Inorganic fillers

[0050] 8 Conductive paste

[0051] 8a Conductor

[0052] 10Ceramic sintered body substrate

[0053] 11Jointing components

[0054] 12 metal bumps

[0055] 20 light emitting elements

[0056] 21Semiconductor stack

[0057] 22 Component substrate

[0058] 23 Translucent components

[0059] 24-element electrode

[0060] 30 reflective components

[0061] 100 Lighting Devices DETAILED DESCRIPTION

[0062] Hereinafter, the embodiments of the present disclosure will be described with reference to the accompanying drawings. However, the embodiments described below are methods for concretizing the technical ideas of the present disclosure, and the invention is not limited to the following unless otherwise specified. The description in one embodiment may also be applied to other embodiments and variations. In addition, the accompanying drawings schematically illustrate the embodiments, and in order to clearly illustrate, the size, spacing, positional relationship, etc. of each component are sometimes exaggerated, or the illustration of a part of the component is omitted. The directions shown in the figures indicate the relative positions between the constituent elements, and do not indicate the absolute positions. It should be noted that, for the same name and symbol, in principle, they represent the same or homogeneous components, and detailed descriptions are appropriately omitted. In addition, for the embodiments, "encapsulation" is not limited to the case of direct contact, but also includes the case of indirect encapsulation such as by sandwiching other components.

[0063] [Ceramic sintered body substrate]

[0064] Reference Figure 1 A to Figure 4B The ceramic sintered body substrate 10 according to the embodiment will be described. Figure 1 It is a plan view schematically showing a ceramic sintered body substrate according to the embodiment. Figure 2 It is a cross-sectional perspective view schematically showing a ceramic sintered body substrate according to the embodiment. Figure 3A This is an enlarged cross-sectional view schematically showing an enlarged state in which the first metal paste is arranged in the through-hole of the sintered ceramic substrate according to the embodiment. Figure 3B It is a schematic diagram showing Figure 3A An enlarged cross-sectional view of the state of the first metal body after sintering the ceramic sintered substrate. Figure 4A This is a scanning electron microscope photograph showing an enlarged view of the first metal body provided in the through-hole of the sintered ceramic substrate according to the embodiment. Figure 4B This is a scanning electron microscope photograph showing an enlarged view of the first metal body provided in the through-hole of the sintered ceramic substrate according to the embodiment. Figure 7 is a cross-sectional view schematically showing a light emitting device according to an embodiment. Figure 3A The state of the ceramic sintered body substrate before sintering is shown. Figure 4A shows the state inside the through hole, Figure 4B The state near the interface between the through hole and the ceramic substrate 1 is shown.

[0065] The ceramic sintered body substrate 10 includes: a ceramic substrate 1 having a through hole 2, and a first metal body 3a disposed in the through hole 2, wherein the first metal body 3a includes: a plurality of metal powders 4a, a second metal 4b, and a metal compound 5. Here, "a plurality of metal powders 4a" does not mean that there are metal powders with a clear interface, but means that in the cross-sectional observation of the first metal body 3a, it can be confirmed that a plurality of substances that can be considered as metal powders are gathered together based on the presence of voids and the state of the metal component. In other words, it is not a state in which the metal powders are completely melted and there is no interface. If the metal powder 4a is considered as one metal powder because the reaction product 5b of the metal compound 5 is present on the surface and grain boundary of the metal powder 4a, even if a part is bonded to other metal powders, it can be counted as one metal powder 4a. The melting point of the metal powder 4a is higher than that of the second metal 4b, and it is dispersed in the continuous second metal 4b. The ceramic substrate 1 has a reaction layer 5a of the metal compound 5 on the inner wall of the through hole 2, and has a reaction product 5b of the metal compound 5 on the surface and grain boundary of the metal powder 4a. The first metal body is sometimes referred to as the first metal paste before firing, and the conductor is sometimes referred to as the conductive paste before firing. The state of the fired material is different from that of the raw material. For the sake of convenience, the fired material is sometimes referred to as the raw material. The properties of the ceramic substrate are different before and after firing, so it is described in the form of a ceramic substrate.

[0066] Hereinafter, each structure of the ceramic sintered body substrate 10 will be described.

[0067] (Ceramic Substrate)

[0068] The ceramic substrate 1 is a plate-like member that serves as the basis of the ceramic sintered body substrate 10. The top view shape of the ceramic substrate 1 is, for example, a rectangular shape. It should be noted that the top view shape of the ceramic substrate 1 is not particularly limited. The ceramic substrate 1 preferably includes at least one selected from silicon nitride, aluminum nitride, and boron nitride. It should be noted that the ceramic substrate 1 is preferably a nitride ceramic such as silicon nitride, aluminum nitride, and boron nitride, and an oxide ceramic such as aluminum oxide, silicon oxide, calcium oxide, and magnesium oxide can be used. In addition, the ceramic substrate 1 can also use silicon carbide, mullite, borosilicate glass, etc.

[0069] The ceramic substrate 1 is provided with a through hole 2 at a given position along the thickness direction, and a first metal body 3a is arranged inside the through hole 2. Furthermore, the ceramic substrate 1 is provided with a conductor 8a in a manner that contacts at least a portion of the first metal body 3a. It should be noted that here, the conductor 8a is arranged so as to contact at least a portion of the first metal body 3a arranged in the through hole 2 on the surface and back of the ceramic substrate 1. The conductor 8a can be used as a wiring, a wiring pad, or an external connection electrode for making an electrical connection with the light-emitting element 20.

[0070] In addition, the through hole 2 of the ceramic substrate 1 is a conductive hole for electrically connecting the element electrode 24 of the light-emitting element 20 to the outside of the ceramic substrate 1 by means of the first metal body 3a arranged inside. The through hole 2 can be formed by drilling, laser processing or other mechanical processing on the raw sheet of the ceramic substrate that has been sintered or the ceramic substrate before sintering, or can be formed by etching or other chemical processing on the sintered ceramic substrate 1. For the through hole 2, when it is cut along a horizontal direction relative to the ceramic substrate 1, its shape is preferably roughly circular or circular. Moreover, the diameter of the through hole 2 is preferably greater than 0.05 mm and less than 0.5 mm. When the through hole 2 is greater than 0.05 mm, it is easy to reliably configure the first metal body 3a. In addition, when the through hole 2 is less than 0.5 mm, it is possible to maintain high strength and low resistance value, and set it to an appropriate filling amount.

[0071] (First metal body)

[0072] The first metal body 3a is arranged in the through hole 2 of the ceramic substrate 1. The first metal body 3a is a member that is electrically connected to the light emitting element 20 alone or together with the conductor 8a. As an example, the first metal body 3a includes a metal powder 4a, a second metal 4b and a metal compound 5, a reaction layer 5a of the metal compound 5 is formed on the inner side surface defining the through hole 2, and a reaction product 5b of the metal compound 5 is formed on the surface or grain boundary of the second metal 4b arranged around the metal powder 4a. However, here, the case where the first metal paste 3 includes an inorganic filler 7 other than a metal is described.

[0073] As an example, in the state before sintering, the first metal paste 3 includes: 63% by mass or more and 85% by mass or less of the first metal powder having the metal powder 4a and the coating metal member 40b which becomes the second metal 4b, 1% by mass or more and 15% by mass or less of the active metal powder, and 5% by mass or more and 15% by mass or less of the organic binder 6 as a solvent. The first metal paste 3 becomes the first metal body after sintering. The coating metal member 40b becomes the second metal 4b after sintering. The active metal powder 50 becomes the metal compound 5 after sintering. The first metal body 3a includes: 60% by mass or more and 80% by mass or less of the metal powder 4a, 3% by mass or more and 25% by mass or less of the second metal 4b, and 1% by mass or more and 15% by mass or less of the reaction product 5b of the metal compound 5. The reaction layer 5a of the metal compound 5 is segregated on the inner side surface defining the through hole 2. It should be noted that in the first metal body 3a, the inorganic filler 7 is in a dispersed state.

[0074] The metal powder 4a is a powder of a metal that becomes the core of the first metal powder 4 when the first metal paste 3 is configured. The median particle size of the metal powder 4a is preferably 1 μm or more and 50 μm or less, and more preferably 5 μm or more and 40 μm or less. When the metal powder 4a is 1 μm or more, it is easy to cover the coated metal member 40b, i.e., the second metal, before firing. In addition, when the metal powder 4a is 50 μm or less in size, it is easy to be configured in accordance with the relationship with the size of the through hole 2. Moreover, as a state before sintering, the metal powder 4a is coated with the coated metal member 40b having a lower melting point than the metal powder 4a. The metal powder 4a is in a state of being dispersed in the first metal paste together with the active metal powder 50, the organic binder 6, and the inorganic filler 7. Moreover, the metal powder 4a is in a state of being dispersed in the second metal 4b after firing.

[0075] That is, the coated metal member 40b coated with the metal powder 4a is melted by firing, and the coated metal member 40b covers the surroundings and makes a part of it continuous. The metal powder 4a is retained in a dispersed state in the molten coated metal member 40b. The reason is that since the molten coated metal member 40b is small in amount and has high viscosity, the metal powder 4a basically does not settle or float. In addition, the metal powder 4a can maintain its particle size by firing in a non-melting state.

[0076] That is, when the metal powder 4a is heated to a temperature above the melting point, it will melt and become liquid, but here the metal powder 4a is heated at a temperature lower than the melting point, so the metal powder 4a itself will not melt and become liquid. Since the metal powder 4a will not melt and become liquid, no large flow will occur in the first metal paste 3. As a result, it is possible to reduce the situation where the surface of the first metal paste 3 shrinks and becomes a large concave surface. Among them, even if the metal powder 4a is at a temperature lower than the melting point, a part of the surface of the metal powder 4a becomes softened by reacting with the coated metal component 40b, and is configured in a state of contact or mixing with other metal powders 4a and the second metal 4b. At this time, there is sometimes an interface between the metal powder 4a and the second metal 4b, and sometimes there is no interface. In this way, the metal powder 4a and the second metal 4b can also be made into a state without an interface, so the resistance value can be reduced and the electrical conductivity and thermal conductivity can be improved.

[0077] In addition, since the first metal powder 4 in the first metal paste 3 is arranged at a high density, there are few voids and low stress after sintering, so it becomes a state with high reliability in terms of cold and hot cycle characteristics. The metal powder 4a, for example, preferably contains at least one selected from Cu, Cr, and Ni. The metal powder 4a also contains an alloy with Cu, Cr, and Ni as the main components. The metal powder 4a is particularly preferably Cu or a Cu alloy. In addition, the melting point of the metal powder 4a is preferably above 1050°C and below 2500°C. When the melting point of the metal powder 4a is above 1050°C, the difference in melting point with the melting point of the second metal 4b or the metal compound 5 described later increases, which can make the dispersion state good. In addition, when the melting point of the metal powder 4a is below 2500°C, the adverse effects on other components can also be reduced.

[0078] The second metal 4b is arranged at a position surrounding at least a part or all of the metal powder 4a. The melting point of the second metal 4b is lower than that of the metal powder 4a. As an example, it preferably contains at least one selected from Ag, Al, Zn, Sn, and Ag-Cu alloy. Ag and Ag-Cu alloy are particularly preferred. The melting point of Ag is 962°C, and the melting point of Ag-Cu alloy is around 780°C, so the difference in melting point with the metal powder 4a can be reduced. The second metal 4b is arranged around the metal powder 4a in a manner that has a thickness of more than 3% and less than 30% of the diameter or major axis of the metal powder 4a before melting, and is melted by sintering and located around the metal powder 4a.

[0079] That is, since the metal powder 4a is coated with a given thickness, the metal powders 4a will not excessively contact or separate from each other even after sintering. By dispersing the metal powder 4a appropriately in this way, the thermal deviation in the through hole can also be suppressed. In addition, the melting point of the second metal 4b is preferably 200°C or more and 1000°C or less, more preferably 500°C or more and 980°C or less, and particularly preferably 750°C or more and 970°C or less. This is because when the melting point of the second metal 4b is 200°C or more, it can withstand the reflow temperature when manufacturing the light-emitting device. In addition, when the melting point of the second metal 4b is 1000°C or less, it has a given difference from the melting point of the metal powder 4a, so that the metal powder 4a can be prevented from melting and the dispersion state of the metal powder 4a can be good. The difference between the melting points of the second metal 4b and the metal powder 4a is at least 50°C or more, preferably 100°C or more. It should be noted that although the second metal 4b is made of basically the same material as the covering metal component 40b, the covering metal component 40b is extremely thin and therefore sometimes melts at a firing temperature much lower than the melting point of the second metal 4b.

[0080] It is preferred that the thickness of the second metal 4b relative to the metal powder 4a in the coating metal member 40b before melting is constant and covers the entire circumference. The coating metal member 40b preferably has a thickness of 3% or more and 30% or less relative to the diameter or major axis of the metal powder 4a. In addition, when the coating metal member 40b before melting of the second metal 4b covers a part of the metal powder 4a, it is preferred to cover it in a manner that the thickness of the thin part is 3% or more relative to the diameter or major axis of the metal powder 4a, and the thickness of the thick part is 30% or less. In the case where the ceramic substrate 1 contains nitrogen, after firing, a reaction product 5b of the metal compound 5 is formed on the surface of the metal powder 4a or in the second metal 4b. The case where the ceramic substrate 1 contains nitrogen refers to the case where at least one selected from silicon nitride, aluminum nitride, and boron nitride is used. In addition, the second metal 4b forms a reaction layer 5a of the metal compound 5 on the inner side surface defining the through hole 2 together with the components of the metal compound 5.

[0081] The metal compound 5 is sometimes arranged between the metal powders 4a. The active metal powder 50 is at least partially or entirely converted into the metal compound 5 by firing. The active metal powder 50 is dispersed in the first metal paste 3, and the fired metal compound 5 is also dispersed in the first metal body 3a. For example, titanium hydride (TiH2) is described as an example of the active metal powder 50. Titanium hydride releases hydrogen by firing to become metal titanium, and then titanium is oxidized or nitrided to become titanium oxide or titanium nitride. In the case where the ceramic substrate 1 contains nitrogen, the active metal powder 50 contained in the first metal paste 3 reacts with the nitrogen in the ceramic substrate 1 to form a reaction layer 5a of the metal compound 5 at the interface between the first metal paste 3 and the ceramic substrate 1. In addition, the reaction product 5b of the metal compound 5 is arranged to be continuously arranged in the space between the metal powders 4a or arranged at the grain boundary between the metal powders 4a. The metal compound 5 is arranged in the following states: a state of directly contacting the metal powder 4a, a state of contacting or surrounding the second metal 4b, and a state of surrounding the inorganic filler 7. As described above, the metal compound 5 forms a reaction layer 5 a together with the components of the second metal 4 b on a part or all of the inner side surface defining the through hole 2 , thereby improving the adhesion strength between the first metal body 3 a and the ceramic substrate 1 .

[0082] In addition, the melting points of the second metal 4b and the metal compound 5 are lower than the melting point of the metal powder 4a. Therefore, the metal powder 4a is sintered in the state of being arranged in the through hole 2 as the first metal paste 3, and even if the coating metal member 40b is melted and the active metal powder 50 reacts, the metal powder 4a is kept dispersed. In addition, the second metal 4b formed by melting the coating metal member 40b is continuously arranged in the through hole 2. Here, "the second metal 4b is continuously arranged in the through hole 2" does not mean that it is physically connected from the upper end to the lower end of the through hole 2, and it is not arranged in a manner biased towards one of the upper end or the lower end in the through hole 2, but means that it is continuously arranged from the upper end to the lower end in the through hole 2 in a manner dispersed among a plurality of metal powders 4a. That is, generally, when a metal melts and becomes liquid, it tends to flow and be distributed. However, here, by configuring the coated metal member 40b in a manner of coating the metal powder 4a and firing it at a given firing temperature, the flow accompanying the melting of the coated metal member 40b can be reduced, and the metal compound 5 can be dispersed and arranged without being distributed from the upper end to the lower end in the through hole 2. For the metal compound 5 formed by the reaction of the active metal powder 50, the reaction product 5b is dispersed in the first metal body 3a, and the reaction layer 5a is arranged on the inner side surface defining the through hole 2. Even if there is a difference in specific gravity between the metal powder 4a and the second metal 4b and the metal compound 5, they will not settle or float, and can maintain a dispersed state.

[0083] The active metal powder 50 is preferably one or more materials selected from TiH2, CeH2, ZrH2, LaH2, and MgH2. By sintering the active metal powder 50, all or part of the hydrogen is separated and reacts with nitrogen, oxygen, carbon, etc. contained in the ceramic substrate 1, the inorganic filler 7, etc., to become a nitride metal, an oxide metal, a carbide metal, etc. The material formed by the change is a metal compound. The active metal powder 50 is particularly preferably TiH2, which contains TiH2 and reacts with nitrogen contained in the ceramic substrate 1, etc., to form a reaction layer 5a such as TiH2 at the interface with the ceramic sintered body substrate 10. Thereby, the adhesion between the first metal body 3a as a conductive via and the ceramic substrate 1 can be improved, and the first metal body 3a is firmly adhered to the through hole 2.

[0084] The inorganic filler 7 is dispersed in the first metal paste 3 to reduce the generation of cracks. As an example, the inorganic filler 7 can include a ceramic filler, a metal filler, a glass filler, etc. Specifically, the inorganic filler 7 can use aluminum oxide, silicon oxide, etc. It should be noted that the inorganic filler 7 can be contained in a content within a range that does not hinder the effects of other contained substances.

[0085] The organic binder 6 is contained in the first metal paste 3 before firing. The organic binder 6 evaporates after firing and does not remain in the first metal paste 3. As an example, the organic binder 6 may be a solvent or a resin material generally used as a via material.

[0086] The conductor 8a is a conductive member that forms a wiring, wiring contact, or external connection electrode of a predetermined wiring pattern. The conductor 8a can be formed by firing the conductive paste 8. The conductive paste 8 is arranged in a manner that is in contact with at least a portion of the first metal paste 3 or the first metal body 3a. The thickness of the conductive paste 8 is preferably, for example, not less than 12 μm and not more than 35 μm. The wiring or connection contact of the conductive paste 8 can be formed, for example, by etching, printing, etc.

[0087] The conductive paste 8 is configured as a wiring or the like configured on the first surface of the ceramic substrate 1, and is configured as a wiring or the like on the second surface which is the opposite side of the first surface. The shape of the conductive paste 8 is formed into a rectangular, circular, linear, etc. when viewed from above, and is configured on the first surface of the ceramic substrate 1 isolated from each other, and is configured on the second surface isolated from each other. For the conductive paste 8, as an example, the size configured on the first surface of the ceramic substrate 1 and the size configured on the second surface are set to be larger in area on the side configured on the first surface, and are set to be different from the side of the second surface, but can also be set to the same size. As an example, the conductive paste 8 is illustrated as a rectangle in a manner that is in contact with the entire circular first metal paste when viewed from above, but its shape and configuration are arbitrary and not limited.

[0088] The conductive paste 8 preferably uses the same member as the first metal paste 3. The material of the conductor 8a can use copper foil as the metal member. In addition, the material of the conductive paste 8 can be a mixture of a single substance or an alloy or a mixed powder of gold, silver, copper, platinum, aluminum, etc., and a resin binder. The resin binder can use a thermosetting resin such as an epoxy resin or a silicone resin. In addition, the conductive paste 8 preferably contains a reducing agent such as an organic acid. Thereby, the resistance of the connection with the light-emitting element 20 can be reduced.

[0089] The first metal paste 3 of the ceramic sintered body substrate 10 having the above-described structure is firmly bonded to the inner side surface defining the through hole 2 of the ceramic substrate 1 , and therefore has high reliability and can reliably establish electrical connection with the light emitting element.

[0090] It should be noted that the number of through holes 2 of the ceramic substrate 1 may be more than two, and the shape thereof may be elliptical, rectangular, etc., and is not limited to circular.

[0091] The conductor 8a may be in a square shape, a rectangular shape, a trapezoidal shape, or a shape including a curved line portion. Alternatively, the conductor 8a may not be provided and the light emitting element 20 may be directly connected to a portion of the first metal body 3a.

[0092] [Method for producing sintered ceramic substrate]

[0093] Next, refer to Figures 5 to 6C A method for producing a sintered ceramic substrate according to an embodiment will be described. Figure 5 This is a flowchart illustrating a method for producing a sintered ceramic substrate according to an embodiment. Fig. 6A It is a cross-sectional view schematically showing a ceramic substrate prepared in the method for producing a sintered ceramic substrate according to the embodiment. Figure 6B It is a cross-sectional view schematically showing a state where the first metal paste is arranged in the through-hole in the method for producing a sintered ceramic substrate according to the embodiment. Figure 6C It is a cross-sectional view schematically showing a state where a conductive paste is arranged in the method for producing a sintered ceramic substrate according to the embodiment.

[0094] The manufacturing method S10 of a ceramic sintered body substrate includes: S11, preparing a ceramic substrate having a through hole formed therein before firing; S12, disposing a first metal paste in the through hole; and S14, firing the ceramic substrate on which the first metal paste is disposed. In S12 of disposing the first metal paste, the first metal paste includes a plurality of first metal powders and a plurality of active metal powders, and the first metal powder has: a metal powder serving as a core, and a covering metal member having a melting point lower than that of the metal powder and covering at least a portion of the metal powder. In S14 of firing the ceramic substrate, the firing temperature is a temperature of 700° C. or higher and lower than the melting point of the metal powder. It should be noted that, for the manufacturing method S10 of a ceramic sintered body substrate, as an example, a method of disposing a conductive paste on a ceramic substrate so that at least a portion of the conductive paste contacts with the first metal paste is described in S13 after S12 of disposing the first metal paste and before S14 of firing the ceramic substrate.

[0095] (Preparation of ceramic substrate)

[0096] As an example, in S11 (hereinafter also referred to as step S11) of preparing a ceramic substrate, a flat substrate is prepared. In this step S11, the prepared ceramic substrate 1 is formed with through holes 2 of a number corresponding to the connection parts of the element electrodes 24 and the like of the light-emitting element 20 described later by laser processing or the like. In the case where one light-emitting element 20 is arranged on the ceramic substrate 1, as an example, through holes 2 are formed at two locations. It should be noted that the ceramic substrate 1 can be prepared in a state where the size of the area for arranging a plurality of light-emitting elements 20 and the number of through holes 2 corresponding to the number of element electrodes 24 are formed, or it can be prepared by cutting it into a size for arranging a given number of light-emitting elements 20.

[0097] (Preparation of the first metal paste)

[0098] In S12 (hereinafter also referred to as step S12) of disposing the first metal paste, the first metal paste is disposed in the through hole 2 formed on the ceramic substrate 1. In this step S12, for example, the first metal paste 3 is disposed in the through hole 2 by screen printing or injection using a nozzle. In addition, the first metal powder 4 has a metal powder 4a serving as a core and a coating metal member 40b coating the metal powder 4a.

[0099] In step S12, when the first metal paste 3 is arranged in the through hole 2, it is preferred to arrange the first metal paste in the through hole 2 from the first surface which is one surface of the ceramic substrate 1, for example, using a scraper which is a tool used in screen printing, and further, arrange the first metal paste in the through hole 2 from the second surface which is the other surface of the ceramic substrate 1 using a scraper in the same manner as the first surface.

[0100] Next, S13 (hereinafter also referred to as step S13) of disposing the conductive paste 8 is performed. In this step S13, the conductive paste 8 is disposed on the ceramic substrate 1 in such a manner that at least a portion is in contact with the first metal paste 3 disposed in the through hole 2. In this step S13, the conductive paste 8 is disposed in such a manner that it is in contact with the entire surface of the first metal paste 3 exposed from the through hole 2 of the ceramic substrate 1. As an example, the conductive paste 8 is disposed in a rectangular shape at a total of four locations, namely, two locations on the first surface of the ceramic substrate 1 and two locations on the second surface of the ceramic substrate 1. In addition, for the conductive paste 8, rectangular wiring or wiring contacts are formed on the first surface and the second surface of the ceramic substrate 1 by means of a mask by screen printing, metal mask printing, etc.

[0101] It should be noted that the first metal paste 3 and the conductive paste 8 used in step S12 and step S13 have fluidity and can be freely arranged in the through-hole 2 of any shape, and can be arranged by applying them in any shape and thickness and then curing them.

[0102] Next, the ceramic substrate is fired in step S14 (hereinafter referred to as step S14). In step S14, the firing temperature is 700°C or higher and lower than the melting point of the metal powder. It should be noted that in step S14, when the firing operation is performed, the firing gas atmosphere is preferably an Ar gas atmosphere of 99.9% or higher or a 10 -5 A vacuum atmosphere of Pa or less is formed. In step S14, the sintering temperature is preferably 700°C to 1000°C, more preferably 700°C to 980°C, and particularly preferably 750°C to 970°C.

[0103] It should be noted that the ceramic sintered body substrate 10 can be manufactured by the step 14. Figure 3B As shown in FIG. 4 , the state of the first metal paste 3 after firing is observed. For example, the copper powder as the metal powder 4a remains dispersed in the continuous second metal 4b, i.e., the Ag-Cu alloy, as before firing. This is because, by adjusting the firing temperature to a predetermined temperature or less as described above, the metal powder 4a does not melt, and the second metal 4b after melting of the coating metal member 40b and the metal compound 5 after the reaction of the active metal powder 50 are arranged between the metal powders 4a. In addition, after firing, the metal compound 5 formed by the reaction of the active metal powder 50 forms a reaction product 5b of the metal compound 5 on the surface of the coating metal member 40b before melting, and a reaction layer 5a of the metal compound 5 is formed on the inner side surface of the through hole 2 defined in the ceramic substrate 1. In this way, by forming the reaction layer 5a of the metal compound 5 after firing using the first metal paste 3, the first metal paste 3 is in a state of being bonded to the through hole 2 with high strength. Therefore, for the ceramic sintered body substrate 10, the dispersion state of the metal powder 4a is relatively uniform in the electrical connection performed by means of the first metal body 3a, so the conductivity is stable. In addition, in order to form the reaction layer 5a of the metal compound 5, the bonding strength between the first metal paste and the inner side surface defining the through hole 2 is high, and a highly reliable structure can be achieved.

[0104] [Light-emitting device]

[0105] Next, refer to Figure 7 , while explaining the light emitting device 100 of the embodiment. The light emitting device 100 is a device that emits light by configuring a light emitting element 20 on a ceramic sintered body substrate 10. In the drawings, the number of the light emitting element 20 is one, but the number of the light emitting element 20 may be multiple, and the configuration thereof may be set in a row, etc., without any particular limitation.

[0106] The light emitting device 100 includes the ceramic sintered body substrate 10 described above, and the light emitting element 20 electrically connected to the conductor 8a which is the wiring of the ceramic sintered body substrate 10. It should be noted that, as an example, the light emitting device 100 is provided with a light reflecting member 30 which covers the side surface of the light emitting element 20 and the ceramic sintered body substrate 10. In addition, in the ceramic sintered body substrate 10, wiring of various patterns can be formed according to the application.

[0107] (Light-emitting element)

[0108] The light emitting element 20 includes a pair of element electrodes 24 , a light-transmitting member 23 disposed on the light extraction surface side of the light emitting element 20 , an element substrate 22 , and a semiconductor stack 21 .

[0109] As an example, the light emitting element 20 has a semiconductor stack 21 on an element substrate 22. In this embodiment, a light-transmitting member 23 is arranged on the upper surface side of the element substrate 22, which is a light extraction surface. The semiconductor stack 21 is provided on the lower surface side of the element substrate 22, and a pair of element electrodes 24 are provided on the semiconductor stack 21 side. As the semiconductor stack 21, any composition can be used according to the desired emission wavelength. For example, a nitride semiconductor (Indium nitride) capable of emitting blue or green light can be used. X Al Y Ga 1-X-Y N, 0≤X, 0≤Y, X+Y≤1), GaP, or GaAlAs, AlInGaP, etc. that can emit red light. In addition, the size and shape of the light emitting element 20 can be appropriately selected according to the purpose of use. As an example, the element substrate 22 can use a sapphire substrate or a silicon substrate.

[0110] The light-transmitting member 23 is made of, for example, a light-transmitting resin material, and epoxy resin, silicone resin, or a resin obtained by mixing these materials may be used. The light-transmitting member 23 may contain a phosphor, and for example, by containing a phosphor that absorbs blue light from the light-emitting element 20 and emits yellow light, white light may be emitted. In addition, the light-transmitting member 23 may contain multiple types of phosphors, and for example, by containing a phosphor that absorbs blue light from the semiconductor stack 21 and emits green light and a phosphor that emits red light, white light may also be emitted from the light-emitting element 20.

[0111] As such a phosphor, for example, a yttrium / aluminum / garnet-based phosphor (for example, Y3(Al,Ga)5O 12 :Ce), lutetium / aluminum / garnet phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium / aluminum / garnet phosphors (e.g., Tb3(Al,Ga)5O 12:Ce), β-sialon phosphors (e.g., (Si,Al)3(O,N)4:Eu), α-sialon phosphors (e.g., Mz(Si,Al) 12 (O,N) 16 (wherein 0<z≤2, M is Li, Mg, Ca, Y and lanthanide elements other than La and Ce)), nitride phosphors such as CASN phosphors (e.g., CaAlSiN3:Eu) or SCASN phosphors (e.g., (Sr,Ca)AlSiN3:Eu), fluoride phosphors such as KSF phosphors (e.g., K2SiF6:Mn), KSAF phosphors (e.g., K2(Si,Al)F6:Mn), or MGF phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), or quantum dot phosphors such as perovskite and chalcopyrite, etc.

[0112] The element electrode 24 is connected to the conductor 8a of the ceramic sintered body substrate 10 through the metal bump 12 by means of the bonding member 11. Here, the conductor 8a can be appropriately treated with a surface treatment such as plating in which Ni / Pd / Au is stacked in this order. One of the element electrodes 24 is a p-electrode, and is arranged at a distance that does not cause an electrical short circuit with the other n-electrode. As an example, the element electrode 24 adopts a structure in which a p-electrode and an n-electrode are arranged at each position, and a structure in which any one of them is set to two positions and the other is arranged at one position can also be adopted.

[0113] The metal bump 12 electrically connects the element electrode 24 to the conductor 8a. The metal bump 12 may be arranged on the element electrode 24 side or on the conductor 8a side. In addition, the shape, size, and number of the metal bumps 12 can be appropriately set as long as they are arranged within the range of the element electrode 24. In addition, the size of the metal bump 12 can be appropriately adjusted according to the size of the semiconductor stack, the light output of the desired light-emitting element, etc., and for example, a size of about tens of μm to hundreds of μm in diameter can be cited.

[0114] The metal bump 12 can be formed, for example, by Au, Ag, Cu, Al, Sn, Pt, Zn, Ni or an alloy thereof, for example, by a stud bump known in the art. The stud bump can be formed by a stud bump bonding machine, a wire bonding device, etc. In addition, the metal bump 12 can be formed by a method known in the art, such as electroplating, chemical plating, evaporation, sputtering, etc.

[0115] As an example, here, the metal bump 12 is joined by means of the joining member 11. As the joining member 11 used here, for example, solders of tin-bismuth series, tin-copper series, tin-silver series, gold-tin series, etc., eutectic alloys such as alloys with Au and Sn as main components, alloys with Au and Si as main components, alloys with Au and Ge as main components, or paste materials such as silver, gold, palladium, anisotropic conductive materials such as ACP and ACF, solders of low melting point metals, conductive adhesive materials formed by combining them, conductive composite adhesive materials, etc. can be listed.

[0116] (Reflective member)

[0117] The light reflecting member 30 is a member having light reflecting properties. The light reflecting member 30 is arranged so as to be coated on the first surface of the ceramic sintered body substrate 10 and to cover the side surface of the light emitting element 20. In addition, the light reflecting member 30 is arranged so as to expose the light extraction surface of the light emitting element 20 and to be arranged in the same plane as the light transmissive member 23 of the light emitting element 20. It should be noted that, as an example, the light reflecting member 30 is also arranged between the lower surface of the light emitting element 20 and the first surface of the ceramic sintered body substrate 10.

[0118] In order to effectively utilize the light from the light emitting element 20, the light reflecting member 30 preferably has a high reflectivity. The light reflecting member 30 is preferably white. In the wavelength of the light emitted by the light emitting element 20, the reflectivity of the light reflecting member 30 is preferably 90% or more, more preferably 94% or more, for example.

[0119] The light reflecting member 30 can use thermoplastic resins such as acrylic resin, polycarbonate resin, cyclic polyolefin resin, polyethylene terephthalate resin, polyethylene naphthalate resin or polyester resin, or thermosetting resins such as epoxy resin or silicone resin as resin. In addition, as the light diffusion material, for example, known materials such as titanium oxide, silicon dioxide, aluminum oxide, zinc oxide or glass can be used.

[0120] The light emitting device 100 having the above-described structure includes the first metal body 3 a in the ceramic sintered body substrate 10 , so that the bonding strength between the first metal body 3 a and the ceramic substrate 1 is high, and reliability can be improved.

[0121] It should be noted that, although the light emitting device 100 uses one light emitting element 20 as one unit as a control unit for brightness and lighting, the number of light emitting elements 20 included in one unit may be one or more. For example, four light emitting elements 20 in one row and four columns or two rows and two columns, or nine light emitting elements 20 in three rows and three columns may be set as one unit.

[0122] [Method for manufacturing light emitting device]

[0123] Next, refer to Figures 8 to 9D A method for manufacturing the light emitting device according to the embodiment will be described. Figure 8 is a flowchart illustrating a method for manufacturing a light emitting device according to an embodiment. Fig. 9A This is a cross-sectional view schematically showing a ceramic sintered body substrate prepared in the method for manufacturing a light emitting device according to the embodiment.

[0124] Fig. 9B It is a cross-sectional view schematically showing a state where a bonding member is arranged on a ceramic sintered body substrate.

[0125] Fig. 9C This is a cross-sectional view schematically showing a state where light-emitting elements are arranged in a method for manufacturing a light-emitting device according to an embodiment. Fig.9D It is a cross-sectional view schematically showing a state where a light reflecting member is arranged in the method for manufacturing a light emitting device according to the embodiment.

[0126] The manufacturing method S20 of the light emitting device includes: S21, preparing a ceramic sintered body substrate manufactured by the manufacturing method S10 of the ceramic sintered body substrate already described; and, S22, configuring a light emitting element on the ceramic sintered body substrate, and in S22 of configuring the light emitting element, directly or indirectly electrically connecting the first metal component configured in the through hole to the light emitting element. It should be noted that after configuring the light emitting element S22, S23 of configuring a reflective component may be included. In addition, in S22 of configuring the light emitting element, the element electrode 24 may be directly or indirectly connected to the conductor 8a that is in contact with at least a portion of the first metal body 3a.

[0127] (Preparation of ceramic sintered body substrate)

[0128] S21 (hereinafter referred to as step S21) of preparing a ceramic sintered body substrate refers to preparing a ceramic sintered body substrate 10 manufactured by the ceramic sintered body substrate manufacturing method S10 described above. Regarding the ceramic sintered body substrate 10, four conductors 8a connected to the first metal body 3a arranged in the through hole 2 are arranged on the first surface and the second surface thereof. It should be noted that the shape, size, and interval of the conductor 8a can be adjusted and formed according to the element electrode 24 of the light-emitting element 20. It should be noted that the ceramic sintered body substrate 10 has a plurality of areas for arranging the light-emitting element 20, and after the reflective member 30 described later is arranged, it can be set to a size for each light-emitting device 100 to be monolithic, or it can be set to a size for each light-emitting device 100.

[0129] (Configure light emitting elements)

[0130] S22 (hereinafter referred to as step S22) of configuring the light-emitting element means configuring the light-emitting element 20 on the ceramic sintered body substrate 10. In this step S22, the element electrode 24 of the light-emitting element 20 is connected using the metal bump 12 by means of the bonding member 11 configured on the conductor 8a. As the conductive bonding member 11, for example, a bump of gold, silver, copper, etc., a mixture of metal powder of gold, silver, copper, platinum, aluminum, etc. and a resin binder, that is, a conductive paste material, or a solder of tin-silver-copper (SAC) system or tin-bismuth (SnBi) system can be used. It should be noted that the light-emitting element 20 can be configured as an element in a state where the translucent member 23 is connected to the element substrate 22 in advance. When the translucent member 23 is bonded to the element substrate 22, a translucent bonding material is used.

[0131] (Configure reflective components)

[0132] S23 of arranging the light reflecting member (hereinafter referred to as step S23) means arranging the light reflecting member 30 so as to cover the first surface which is the upper surface of the ceramic sintered body substrate 10 and the side surface of the light emitting element 20. In this step S23, the light reflecting member 30 is arranged on the ceramic sintered body substrate 10 so as to surround the light emitting element 20 and expose the upper surface of the light-transmitting member 23 which is the light extraction surface of the light emitting element 20. The light reflecting member 30 is arranged so as to be rectangular in a plan view.

[0133] It should be noted that in the method for manufacturing the light emitting device S20, after the operation of step S23 is completed, a singulation operation is performed as needed. The light emitting device 100 is pre-set as one unit of the light emitting device 100 according to the number of light emitting elements 20 used. Therefore, in the case of collectively manufacturing a plurality of light emitting devices 100, a singulation operation can be performed. In the case of performing a singulation operation, a plurality of light emitting devices 100 are manufactured by cutting into a grid shape. In addition, as a method of cutting, for example, a disc-shaped rotary knife, an ultrasonic cutter, laser irradiation, a cutter, etc. can be used.

[0134] The method S20 for manufacturing a light emitting device having the above-mentioned structure can improve the bonding strength of the first metal paste 3 arranged in the through hole 2 of the ceramic substrate 1 through the method S10 for manufacturing a ceramic sintered body substrate, thereby achieving reliability and enabling stable control of the light emitting element 20 .

[0135] (Application example)

[0136] It should be noted that if Fig. 10A and Fig. 10B As shown, a light emitting module 100A including a plurality of light emitting devices 100 (11 in the figure) arranged in a row can be manufactured. The configuration of the light emitting module 100A will be described. Fig. 10A It is a perspective view showing an application example of the light emitting device. Fig. 10B is omitted Fig. 10A A sectional view showing a cross section of a portion of a diagram.

[0137] The light emitting module 100A includes eleven light emitting devices 100 in a row, a frame 140 outside a light reflecting member 30 , and a module substrate 150 connected to the conductor 8 a below the ceramic sintered body substrate 10 .

[0138] The frame 140 is a member for surrounding the reflective member 30 that covers the plurality of light-emitting devices 100. The frame 140 is formed in a rectangular ring shape, for example, a rectangular shape when viewed from above, and is configured to surround the reflective member 30. The frame 140 can be formed using a frame-shaped member formed of metal, alloy or ceramic. Examples of metals include Fe, Cu, Ni, Al, Ag, Au, Al, Pt, Ti, W, Pd, etc. Examples of alloys include alloys containing at least one of Fe, Cu, Ni, Al, Ag, Au, Al, Pt, Ti, W, Pd, etc. In addition, a resin material can be used as the frame 140. In this case, the above-mentioned metal, alloy or ceramic member can be buried in the frame 140 formed of the resin material, and a portion of the frame 140 can be formed of the resin material, and another portion can be formed of the metal, alloy or ceramic member.

[0139] The module substrate 150 is a member on which the light emitting device 100 is mounted, and electrically connects the light emitting device 100 to the outside. The module substrate 150 is formed in a substantially rectangular shape in a plan view, for example. The module substrate 150 includes a substrate portion 160 and a wiring board portion 170 .

[0140] As the material of the substrate 160, for example, an insulating material is preferably used, and a material that does not easily transmit light emitted from the light emitting element 20, external light, etc. is preferably used. For example, ceramics such as alumina, aluminum nitride, and mullite, thermoplastic resins such as polyamide, polyphthalamide, polyphenylene sulfide, or liquid crystal polymer, epoxy resin, silicone resin, modified epoxy resin, urethane resin, or phenolic resin can be used. Among them, ceramics with excellent heat dissipation are preferably used.

[0141] The wiring plate portion 170 is formed on the substrate portion 160 at a position facing the conductor 8a below the light emitting device 100. Examples of the material of the wiring plate portion 170 include the materials exemplified as the materials used for the first metal body 3a, the conductor 8a, and the like.

[0142] It should be noted that the module substrate 150 is configured in such a manner that it is bonded to the frame 140 via a conductive adhesive material 151, and the conductor 8a is bonded to the wiring board portion 170. As the conductive adhesive material 151, for example, eutectic solder, conductive paste, bumps, etc. can be used. In addition, in the light-emitting device 100, the protection element 125 and each light-emitting element 20 are respectively arranged on the ceramic sintered body substrate 10 in parallel.

[0143] The light emitting module 100A is configured as described above, and therefore, is driven as follows. That is, the light emitting module 100A supplies current from an external power source to the light emitting element 20 via the wiring board portion 170, the conductive paste, the first metal paste, and the element electrode 24, so that the light emitting element 20 emits light. Of the light emitted by the light emitting element 20, the light traveling upward is taken out to the outside above the light emitting device 100 via the light-transmitting member 23. In addition, the light traveling downward is reflected by the ceramic sintered body substrate 10, and is taken out to the outside of the light emitting device 100 via the light-transmitting member 23. In addition, the light traveling between the light emitting element 20 is reflected by the light-reflecting member 30 and the frame 140, and is taken out to the outside of the light emitting device 100 via the light-transmitting member 23. In addition, the light traveling between the light emitting elements 20 is reflected by the light-reflecting member 30, and is taken out to the outside of the light emitting device 100 via the light-transmitting member 23. At this time, by narrowing the distance between the light-transmitting members 23 (for example, 0.2 mm or less), for example, when the light-emitting module 100A is used as a light source for a vehicle headlamp, the structure of the optical system can be simplified and made small.

[0144] It should be noted that, when manufacturing the light emitting module 100A, the light emitting devices 100 are arranged on a sheet member, the frame 140 is arranged around the light emitting devices 100, and the light reflecting member 30 is arranged in a space surrounded by the frame 140 and the sheet member in this state, thereby arranging the light reflecting member 30. Then, the light emitting devices 100 supported by the frame 140 and the light reflecting member 30 are arranged on the module substrate 150 on which the wiring board portion 170 and the conductive adhesive material 151 are arranged, and the conductive paste 8 is electrically connected to the wiring board portion 170, thereby manufacturing the light emitting module 100A.

[0145] It should be noted that in the configuration of the present invention, the following dependent relationship of [item 1] to [item 24] may be provided.

[0146] [Item 1]

[0147] A method for manufacturing a ceramic sintered body substrate, the method comprising:

[0148] A ceramic substrate with through holes formed therein before firing is prepared,

[0149] The first metal paste is placed in the through hole, and

[0150] The ceramic substrate on which the first metal paste is disposed is fired.

[0151] In the step of configuring the first metal paste, the first metal paste includes a plurality of first metal powders and a plurality of active metal powders, the first metal powders having a metal powder serving as a core and a covering metal member having a melting point lower than that of the metal powder and covering at least a portion of the metal powder.

[0152] In the step of firing the ceramic substrate, the firing temperature is 700° C. or higher and lower than the melting point of the metal powder.

[0153] [Item 2]

[0154] The method for producing a sintered ceramic substrate according to Item 1, wherein in the step of disposing the first metal paste, the metal powder contains at least one selected from the group consisting of Cu, Cr, and Ni.

[0155] [Item 3]

[0156] The method for producing a ceramic sintered substrate according to item 1 or 2, wherein, in the step of configuring the first metal paste, the coating metal member includes at least one selected from Ag, Al, Zn, Sn, and Ag-Cu alloy.

[0157] [Item 4]

[0158] The method for producing a ceramic sintered substrate according to any one of items 1 to 3, wherein in the step of disposing the first metal paste, the coating metal member has a thickness of 3% to 30% with respect to the diameter or major axis of the metal powder.

[0159] [Item 5]

[0160] The method for producing a sintered ceramic substrate according to any one of items 1 to 4, wherein in the step of disposing the first metal paste, the median particle size of the metal powder is 1 μm or more and 50 μm or less.

[0161] [Item 6]

[0162] The method for producing a sintered ceramic substrate according to any one of items 1 to 5, wherein in the step of configuring the first metal paste, the active metal powder includes at least one selected from TiH 2 , CeH 2 , ZrH 2 , and MgH 2 .

[0163] [Item 7]

[0164] The method for producing a sintered ceramic substrate according to any one of items 1 to 6, wherein in the step of disposing the first metal paste, the melting point of the metal powder is 1050° C. or higher and 2500° C. or lower.

[0165] [Item 8]

[0166] The method for producing a sintered ceramic substrate according to any one of items 1 to 7, wherein in the step of disposing the first metal paste, the melting point of the coating metal member is 200° C. or higher and 1000° C. or lower.

[0167] [Item 9]

[0168] The method for producing a sintered ceramic substrate according to any one of items 1 to 8, wherein in the step of disposing the first metal paste, the first metal paste further contains an organic binder.

[0169] [Item 10]

[0170] The method for producing a sintered ceramic substrate according to any one of items 1 to 9, wherein in the step of disposing the first metal paste, the first metal paste further contains a plurality of inorganic fillers other than the metal.

[0171] [Item 11]

[0172] The method for producing a sintered ceramic substrate according to any one of items 1 to 10, wherein in the step of firing the ceramic substrate, the firing temperature is 1000° C. or less.

[0173] [Item 12]

[0174] The method for producing a sintered ceramic substrate according to any one of items 1 to 11, wherein in the step of firing the ceramic substrate, the firing temperature is 950° C. or lower.

[0175] [Item 13]

[0176] The method for producing a sintered ceramic substrate according to any one of items 1 to 12, wherein in the step of firing the ceramic substrate, the firing gas atmosphere is an Ar gas atmosphere of 99.9% or more or an Ar gas atmosphere of 10 -5 Vacuum atmosphere below Pa.

[0177] [Item 14]

[0178] A method for manufacturing a ceramic sintered substrate according to any one of items 1 to 13, wherein, after the step of configuring the above-mentioned first metal paste and before the step of sintering the above-mentioned ceramic substrate, a step of configuring a conductive paste on the above-mentioned ceramic substrate so that at least a portion of the conductive paste is in contact with the above-mentioned first metal paste is performed.

[0179] [Item 15]

[0180] A method for manufacturing a light emitting device, the method comprising:

[0181] preparing a ceramic sintered substrate manufactured by the method for manufacturing a ceramic sintered substrate according to any one of items 1 to 13, and

[0182] The light emitting element is arranged on the ceramic sintered body substrate.

[0183] In the step of preparing the ceramic sintered body substrate, the first metal paste is fired to form a first metal body.

[0184] In the step of arranging the light emitting element, the first metal body arranged in the through hole is electrically connected to the light emitting element directly or indirectly.

[0185] [Item 16]

[0186] A method for manufacturing a light emitting device, the method comprising:

[0187] A ceramic sintered substrate manufactured by the method for manufacturing a ceramic sintered substrate according to item 14 is prepared; and

[0188] The light emitting element is arranged on the ceramic sintered body substrate.

[0189] In the step of preparing the ceramic sintered body substrate, the first metal paste becomes a first metal body by firing, and the conductive paste becomes a conductor.

[0190] In the step of arranging the light emitting element, the first metal body or the conductor arranged in the through hole is electrically connected to the light emitting element directly or indirectly.

[0191] [Item 17]

[0192] A ceramic sintered body substrate comprising:

[0193] A ceramic substrate having a through hole, and

[0194] a first metal body disposed in the through hole,

[0195] The first metal body comprises a plurality of metal powders, a second metal and a metal compound, wherein the metal powders have a higher melting point than the second metal and are dispersed in the continuous second metal.

[0196] The ceramic substrate has a reaction layer of the metal compound on the inner wall of the through hole, and has a reaction product of the metal compound on the grain boundary of the metal powder.

[0197] [Item 18]

[0198] The ceramic sintered body substrate according to item 17, wherein the metal powder contains at least one selected from Cu, Cr, and Ni.

[0199] [Item 19]

[0200] The sintered ceramic substrate according to item 17 or 18, wherein the second metal includes at least one selected from Ag, Al, Zn, Sn, and Ag-Cu alloy.

[0201] [Item 20]

[0202] The sintered ceramic substrate according to any one of Items 17 to 19, wherein the ceramic substrate includes at least one selected from silicon nitride, aluminum nitride, and boron nitride.

[0203] [Item 21]

[0204] The sintered ceramic substrate according to any one of Items 17 to 20, wherein the metal compound contains at least one element selected from the group consisting of Ti, Ce, Zr, and Mg.

[0205] [Item 22]

[0206] The sintered ceramic substrate according to any one of Items 17 to 21, wherein the median particle size of the metal powder is 1 μm or more and 50 μm or less.

[0207] [Item 23]

[0208] The sintered ceramic substrate according to any one of Items 17 to 22, wherein the through hole has a circular shape when cut in a horizontal direction relative to the ceramic substrate,

[0209] The through hole has a diameter of 0.05 mm or more and 0.5 mm or less.

[0210] [Item 24]

[0211] A light emitting device comprising:

[0212] The ceramic sintered body substrate according to any one of claims 17 to 23, and

[0213] A light emitting element is electrically connected to the first metal body of the sintered ceramic substrate.

[0214] Industrial Applicability

[0215] The light emitting device of the embodiment of the present disclosure can be used for a headlamp light source with variable light distribution. In addition, the light emitting device of the embodiment of the present disclosure can be used for a backlight source of a liquid crystal display, various lighting fixtures, large displays, advertisements, road signs and other display devices, as well as image reading devices and projection devices in digital cameras, fax machines, copiers, scanners and the like.

Claims

1. A method for manufacturing a ceramic sintered body substrate, the method comprising: A ceramic substrate with through holes formed therein before firing is prepared, The first metal paste is disposed in the through hole, and The ceramic substrate on which the first metal paste is disposed is fired. In the step of configuring the first metal paste, the first metal paste includes a plurality of first metal powders and a plurality of active metal powders, the first metal powders having a metal powder serving as a core and a covering metal member having a melting point lower than that of the metal powder and covering at least a portion of the metal powder. In the step of firing the ceramic substrate, the firing temperature is 700° C. or higher and lower than the melting point of the metal powder.

2. The method for producing a sintered ceramic substrate according to claim 1, wherein: In the step of preparing the first metal paste, the metal powder includes at least one selected from the group consisting of Cu, Cr, and Ni.

3. The method for producing a sintered ceramic substrate according to claim 1, wherein: In the step of disposing the first metal paste, the coating metal member includes at least one selected from Ag, Al, Zn, Sn, and Ag-Cu alloy.

4. The method for producing a sintered ceramic substrate according to claim 1, wherein: In the step of arranging the first metal paste, the coating metal member has a thickness of 3% or more and 30% or less with respect to the diameter or the major axis of the metal powder.

5. The method for producing a sintered ceramic substrate according to claim 1, wherein: In the step of disposing the first metal paste, the median particle size of the metal powder is 1 μm or more and 50 μm or less.

6. The method for producing a sintered ceramic substrate according to claim 1, wherein: In the step of configuring the first metal paste, the active metal powder includes at least one selected from TiH 2 , CeH 2 , ZrH 2 , and MgH 2 .

7. The method for producing a sintered ceramic substrate according to claim 1, wherein: In the step of disposing the first metal paste, the melting point of the metal powder is 1050° C. or higher and 2500° C. or lower.

8. The method for producing a sintered ceramic substrate according to claim 1, wherein: In the step of disposing the first metal paste, the melting point of the coating metal member is 200° C. or higher and 1000° C. or lower.

9. The method for producing a sintered ceramic substrate according to claim 1, wherein: In the step of disposing the first metal paste, the first metal paste further includes an organic binder.

10. The method for producing a sintered ceramic substrate according to claim 1, wherein: In the step of disposing the first metal paste, the first metal paste further includes a plurality of inorganic fillers other than the metal.

11. The method for producing a sintered ceramic substrate according to claim 1, wherein: In the step of firing the ceramic substrate, the firing temperature is 1000° C. or less.

12. The method for producing a sintered ceramic substrate according to claim 1, wherein: In the step of firing the ceramic substrate, the firing temperature is 950° C. or less.

13. The method for producing a sintered ceramic substrate according to claim 1, wherein: In the step of firing the ceramic substrate, the firing gas atmosphere is an Ar gas atmosphere of 99.9% or more or a 10 - 5 Vacuum atmosphere below Pa.

14. The method for producing a sintered ceramic substrate according to claim 1, wherein: After the step of arranging the first metal paste and before the step of firing the ceramic substrate, a step of arranging a conductive paste on the ceramic substrate such that at least a portion of the conductive paste is in contact with the first metal paste is performed.

15. A method for manufacturing a light emitting device, the method comprising: A ceramic sintered body substrate manufactured by the method for manufacturing a ceramic sintered body substrate according to any one of claims 1 to 13 is prepared; and The light emitting element is arranged on the ceramic sintered body substrate. In the step of preparing the ceramic sintered body substrate, the first metal paste is fired to form a first metal body. In the step of arranging the light emitting element, the first metal body arranged in the through hole is electrically connected to the light emitting element directly or indirectly.

16. A method for manufacturing a light emitting device, the method comprising: A ceramic sintered body substrate manufactured by the method for manufacturing a ceramic sintered body substrate according to claim 14 is prepared, and The light emitting element is arranged on the ceramic sintered body substrate. In the step of preparing the ceramic sintered body substrate, the first metal paste becomes a first metal body by firing, and the conductive paste becomes a conductor. In the step of arranging the light emitting element, the first metal body or the conductor arranged in the through hole is electrically connected to the light emitting element directly or indirectly.

17. A ceramic sintered body substrate comprising: A ceramic substrate having a through hole, and a first metal body disposed in the through hole, The first metal body comprises a plurality of metal powders, a second metal and a metal compound, wherein the metal powders have a higher melting point than the second metal and are dispersed in the continuous second metal. The ceramic substrate has a reaction layer of the metal compound on the inner wall of the through hole, and has a reaction product of the metal compound on the grain boundary of the metal powder.

18. The ceramic sintered body substrate according to claim 17, wherein: The metal powder includes at least one selected from Cu, Cr, and Ni.

19. The ceramic sintered body substrate according to claim 17, wherein: The second metal includes at least one selected from Ag, Al, Zn, Sn, and Ag-Cu alloy.

20. The ceramic sintered body substrate according to claim 17, wherein The ceramic substrate includes at least one selected from silicon nitride, aluminum nitride, and boron nitride.

21. The ceramic sintered body substrate according to claim 17, wherein The metal compound contains at least one element selected from the group consisting of Ti, Ce, Zr, and Mg.

22. The ceramic sintered body substrate according to claim 17, wherein The median particle size of the metal powder is 1 μm or more and 50 μm or less.

23. The ceramic sintered body substrate according to claim 17, wherein When the ceramic substrate is cut in a horizontal direction, the through hole is circular. The through hole has a diameter of 0.05 mm or more and 0.5 mm or less.

24. A light emitting device comprising: The ceramic sintered body substrate according to any one of claims 17 to 23, and A light emitting element is electrically connected to the first metal body of the sintered ceramic substrate.

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