Integrated MEMS chip and manufacturing method thereof

Abstract

The embodiment of the invention discloses an integrated MEMS chip and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a first substrate and a second substrate; manufacturing an electrical interconnection structure covering one side surface of the second substrate; a first vent hole is formed in the electrical interconnection structure or an auxiliary hole opening structure covering the surface of one side of the first substrate is manufactured, and a first vent hole is formed in the auxiliary hole opening structure. A sensor structure is manufactured on the first substrate, a movable gap is formed between the sensor structure and the electrical interconnection structure, and the movable gap and the movable groove jointly form a deformation space of the corresponding sensor structure. Each first vent hole is provided with a second vent hole which corresponds to and is communicated with the first vent hole. The air pressure of the corresponding deformation space can be adjusted through the second vent hole and the first vent hole which communicate with each other, and the first vent hole and the second vent hole are blocked after the air pressure is adjusted, so that the air pressure in the deformation space is maintained at the preset air pressure.

Description

Technical Field

[0001] The present invention relates to the technical field of manufacturing methods of integrated MEMS chips, and in particular to an integrated MEMS chip and a manufacturing method thereof. Background Art

[0002] Integrated MEMS chip means integrating multiple sensors with different functions on the same MEMS chip. This integration trend can not only reduce the physical size of the system and reduce power consumption, but also improve the reliability and performance of the overall system.

[0003] Some sensor structures integrated on MEMS chips need to work in a closed cavity structure, and wafer bonding is usually used to package the sensor in a closed cavity. However, sensors with different functions require different cavity pressures, and wafer bonding can only achieve a given cavity pressure, and it is impossible to set the pressure for different sensor structures integrated on the same wafer. Summary of the invention

[0004] Embodiments of the present invention provide an integrated MEMS chip and a method for manufacturing the same, so as to set corresponding air pressures for different sensor structures on the same MEMS chip.

[0005] In order to solve the above technical problems, the embodiments of the present invention disclose the following technical solutions: In one aspect, a method for manufacturing an integrated MEMS chip is provided, comprising: Providing a first substrate and a second substrate, wherein a plurality of movable grooves physically isolated from each other are formed on a surface of one side of the first substrate; Manufacturing an electrical interconnection structure, wherein the electrical interconnection structure covers a side surface of the second substrate; At least one first vent hole is formed on the electrical interconnection structure, the surface of the second substrate is exposed in the first vent hole, and the thickness of the electrical interconnection structure is less than the thickness of the second substrate; or, an auxiliary opening structure is formed at the bottom of at least one active groove, the thickness of the auxiliary opening structure is less than the minimum thickness of the first substrate, and the first vent hole is formed on the auxiliary opening structure; Manufacturing a plurality of sensor structures, wherein the plurality of sensor structures are located on a side of the first substrate where the plurality of active grooves are formed, and connected to the first substrate, wherein the plurality of sensor structures correspond to the plurality of active grooves one by one, and at least one of the plurality of sensor structures corresponds to the first vent hole; The first substrate and the second substrate are connected, an active gap is formed between a surface of each sensor structure facing away from the first substrate and a surface of the electrical interconnection structure facing away from the second substrate, adjacent active gaps are physically isolated, the active gaps and the active grooves together constitute a deformation space of the corresponding sensor structure, the projection of the first vent hole is located within the projection of the active gap of the corresponding sensor structure, wherein a plurality of conductors are embedded in the electrical interconnection structure, the conductors correspond to the sensor structures one by one, and the corresponding conductors are electrically connected to the sensor structures; Making at least one second vent hole, wherein the at least one second vent hole corresponds to the at least one first vent hole one by one, and the corresponding second vent hole is connected to the first vent hole, and the air pressure of the corresponding deformation space is adjusted through the connected second vent hole and the first vent hole; The first vent hole and the second vent hole are blocked.

[0006] In addition to or as an alternative to one or more of the features disclosed above, the fabrication of the electrical interconnect structure includes: Manufacturing a first insulating structure, wherein the first insulating structure covers a side surface of the second substrate; Manufacturing a conductive structure, wherein the conductive structure covers a surface of the first insulating structure on a side facing away from the second substrate; removing a portion of the conductive structure at intervals to form a plurality of conductors arranged at intervals on the first insulating structure; Manufacturing a second insulating structure, wherein the second insulating structure covers the remaining surface of the first insulating structure facing away from the second substrate and covers the conductor; A plurality of electrical interconnection holes are formed, wherein the electrical interconnection holes penetrate the second insulating structure, and the plurality of electrical interconnection holes correspond to the plurality of electrical conductors one by one, and the electrical conductors are exposed in the corresponding electrical interconnection holes; The sum of the thickness of the first insulating structure and the second insulating structure is less than the thickness of the second substrate.

[0007] In addition to or as an alternative to one or more features disclosed above, before connecting the first substrate and the second substrate, the manufacturing method further includes: A plurality of first conductive ring structures are formed on a surface of the electrical interconnection structure facing away from the second substrate, wherein the plurality of first conductive ring structures correspond to the plurality of electrical conductors one by one, and the first conductive ring structures are filled in the corresponding electrical interconnection holes to be electrically connected to the corresponding electrical conductors; A second conductive ring structure is fabricated on a surface of each sensor structure facing away from the first substrate, wherein a plurality of the second conductive ring structures correspond to a plurality of the first conductive ring structures in a one-to-one manner; When the first substrate and the second substrate are connected, the first conductive ring structure and the second conductive ring structure are connected accordingly.

[0008] In addition to or as an alternative to one or more features disclosed above, before connecting the first substrate and the second substrate, the manufacturing method further includes: At least one protective structure is manufactured, wherein the protective structure corresponds to the first ventilation hole one by one, and the protective structure is located on a side surface of the sensor structure opposite to the corresponding first ventilation hole, and the projection of the corresponding protective structure overlaps with the projection of the first ventilation hole in the thickness direction of the first substrate.

[0009] In addition to one or more of the features disclosed above, or as an alternative, each of the sensor structures includes a working area and a non-working area, and in the thickness direction of the first substrate, the projection of each of the first ventilation holes on the corresponding sensor structure is located in the non-working area of ​​the sensor structure.

[0010] In addition to one or more of the features disclosed above, or as an alternative, when an auxiliary opening structure is made at the bottom of at least one active groove, at least one active groove includes a main groove and a secondary groove that are connected, and the auxiliary opening structure at least covers the bottom of the secondary groove. When the first substrate and the second substrate are bonded, in the thickness direction of the first substrate, the projection of the main groove on the corresponding sensor structure is located in the working area of ​​the sensor structure, and the projection of the secondary groove on the corresponding sensor structure is located in the non-working area of ​​the sensor structure. After a first ventilation hole is opened on the auxiliary opening structure, the projection of the first ventilation hole overlaps with the projection of the secondary groove.

[0011] In addition to or as an alternative to one or more of the features disclosed above, a connecting groove is provided on a surface of one side of the first substrate where the main groove and the secondary groove are provided, the connecting groove is between the main groove and the secondary groove and is used to connect the main groove and the secondary groove, and the groove depth of the connecting groove is smaller than the groove depth of the secondary groove and the groove depth of the main groove; Wherein, after the first substrate and the second substrate are bonded, the bottom of the connecting groove and the surface of the sensor structure facing the connecting groove together form a connecting channel between the main groove and the secondary groove.

[0012] In addition to or as an alternative to one or more of the features disclosed above, the first ventilation holes have a pore size of 0.2 μm-1 μm.

[0013] In addition to or as an alternative to one or more of the features disclosed above, The aperture of the first vent hole is smaller than the aperture of the second vent hole at one end close to the first vent hole.

[0014] In addition to or as an alternative to one or more of the features disclosed above, making at least one second vent hole includes: When the first vent hole is formed on the electrical interconnection structure, a second vent hole connected to the first vent hole is formed on the second substrate; When the first ventilation hole is opened on the auxiliary opening structure, a second ventilation hole connected to the first ventilation hole is opened on the first substrate.

[0015] In addition to or as an alternative to one or more of the features disclosed above, blocking the first vent and the second vent includes: Making a first blocking structure, wherein the first blocking structure covers the inner wall of the second vent hole and blocks the first vent hole; A second blocking structure is manufactured, wherein the second blocking structure is filled in the second vent hole.

[0016] In another aspect, an integrated MEMS chip is provided, comprising: A first substrate, wherein a plurality of movable grooves physically isolated from each other are formed on a surface of one side of the first substrate; A plurality of sensor structures, the plurality of sensor structures corresponding to the plurality of active grooves one by one, and connected to a surface of a side of the first substrate having the active grooves, wherein in a thickness direction of the first substrate, projections of the corresponding active grooves and the sensor structures overlap; a second substrate, wherein a side surface of the second substrate is covered with an electrical interconnection structure, a plurality of conductors are embedded in the electrical interconnection structure, the conductors correspond to the sensor structures one by one, the corresponding conductors are electrically connected to the sensor structures, a side surface of the electrical interconnection structure facing away from the second substrate is connected to a side surface of the sensor structure facing away from the first substrate, a thickness of the electrical interconnection structure is less than a thickness of the second substrate, an active gap is formed between a side surface of each sensor structure facing away from the first substrate and a side surface of the electrical interconnection structure facing away from the second substrate, adjacent active gaps are physically isolated, and the active gap and the active groove together constitute a deformation space of the corresponding sensor structure; Among them, the electrical interconnection structure has at least one first ventilation hole that penetrates its own thickness, and the first ventilation hole is connected to the deformation space of one of the multiple sensor structures. The second substrate has at least one second ventilation hole that penetrates itself, and the first ventilation hole corresponds to the second ventilation hole one by one, and the corresponding first ventilation hole is connected to the second ventilation hole. After the air pressure in the deformation space is adjusted, the first ventilation hole and the second ventilation hole are blocked; or, the bottom of at least one active groove of the multiple active grooves is covered with an auxiliary opening structure, the thickness of the auxiliary opening structure is less than the minimum thickness of the first substrate, and the first ventilation hole is opened on the auxiliary opening structure, the first ventilation hole is connected to the deformation space of one of the multiple sensor structures, and the first substrate has at least one second ventilation hole that penetrates itself, and the first ventilation hole corresponds to the second ventilation hole one by one, and the corresponding first ventilation hole is connected to the second ventilation hole. After the air pressure in the deformation space is adjusted, the first ventilation hole and the second ventilation hole are blocked.

[0017] In addition to or as an alternative to one or more of the features disclosed above, the electrical interconnection structure includes: a first insulating structure, a plurality of conductors, and a second insulating structure, wherein the first insulating structure is connected to a surface of the second substrate opposite to the first substrate, the plurality of conductors are arranged at intervals on a surface of the first insulating structure facing away from the second substrate, and the second insulating structure covers a surface of the first insulating structure on which the conductors are arranged and covers the plurality of conductors; Among them, the second insulating structure has a plurality of electrical interconnection holes that penetrate its own thickness, and the plurality of electrical interconnection holes correspond one-to-one to the plurality of conductors, and the conductors are exposed in the corresponding electrical interconnection holes. A plurality of first conductive ring structures are connected to the surface of the second insulating structure on the side facing away from the first insulating structure, and the plurality of first conductive ring structures correspond one-to-one to the plurality of conductors, and the first conductive ring structures are filled in the corresponding electrical interconnection holes and are electrically connected to the corresponding conductors.

[0018] In addition to or as an alternative to one or more of the features disclosed above, a diameter of the first ventilation hole is smaller than a diameter of the second ventilation hole at an end adjacent to the first ventilation hole.

[0019] In addition to one or more of the features disclosed above, or as an alternative, each of the sensor structures includes a working area and a non-working area, and in the thickness direction of the first substrate, the projection of each of the first ventilation holes on the corresponding sensor structure is located in the non-working area of ​​the sensor structure.

[0020] In addition to or as an alternative to one or more of the features disclosed above, at least one of the plurality of active grooves includes a main groove and a secondary groove that are connected to each other, and in the thickness direction of the first substrate, a projection of the main groove on the corresponding sensor structure is located in a working area of ​​the sensor structure, and a projection of the secondary groove on the corresponding sensor structure is located in a non-working area of ​​the sensor structure; When the auxiliary opening structure is manufactured at the groove bottom of at least one active groove, the auxiliary opening structure at least covers the groove bottom of one of the secondary grooves.

[0021] One of the above technical solutions has the following advantages or beneficial effects: a plurality of sensor structures are manufactured on the surface of one side of the first substrate disclosed in the present application, and when one or more of the plurality of sensor structures need to adjust the air pressure in the deformation space in which they are located, a first vent hole and a second vent hole that are connected are provided on the second substrate or the active groove corresponding to each sensor structure that needs to adjust the air pressure. Specifically, before bonding the first substrate and the second substrate, the present application first opens a first vent hole that passes through the auxiliary opening structure on the electrical interconnection structure or the auxiliary opening structure, and after bonding the first substrate and the second substrate, opens the second vent hole that is connected to the first vent hole, so that the deformation space where the sensor structure that needs to adjust the air pressure is located can be connected to the outside world through the first vent hole and the second vent hole, thereby adjusting the air pressure in the deformation space, and the first vent hole and the second vent hole are blocked after the air pressure adjustment is completed.

[0022] Moreover, the present application prefabricates an electrical interconnection structure with a thickness less than the thickness of the second substrate or an auxiliary opening structure with a thickness less than the minimum thickness of the first substrate. Compared with directly opening a hole on the first substrate or the second substrate, the present application first opens a first vent hole on the auxiliary opening structure before bonding, and can open a first vent hole with a smaller aperture. The first vent hole is directly connected to the deformation space, and the small aperture facilitates the sealing of the first vent hole after the subsequent voltage regulation is completed, thereby improving the air tightness in the deformation space. At the same time, the electrical interconnection structure integrates the electrical components of multiple sensor structures on the same substrate, saving space and simplifying the packaging process. At the same time, the direct transmission of electrical signals through the conductor in the electrical interconnection structure can also reduce the resistance and electrical noise caused by long-distance transmission during signal transmission, thereby improving the transmission efficiency and accuracy of the signal. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The technical solutions and other beneficial effects of the present invention will be made apparent by describing in detail the specific embodiments of the present invention in conjunction with the accompanying drawings.

[0024] Figure 1 is a step diagram of a method for manufacturing an integrated MEMS chip provided in an embodiment of the present application; Figure 2-7 It is a process diagram of a method for manufacturing an integrated MEMS chip provided in an embodiment of the present application; Figure 8-11 is a process diagram of another method for manufacturing an integrated MEMS chip provided in an embodiment of the present application; Fig.12 is a structural schematic diagram of an auxiliary opening structure provided in an embodiment of the present application; Fig.13 It is a structural schematic diagram of a protection structure provided according to an embodiment of the present application.

[0025] Description of reference numerals: 100, first substrate; 101, active groove; 1011, main groove; 1012, secondary groove; 110. Sensor structure; 111. Working area; 112. Non-working area; 113. Protection structure; 120. second conductive ring structure; 130. movable interval; 200. a second substrate; 300, electrical interconnection structure; 301, first insulating structure; 302, conductor; 303, second insulating structure; 3031, electrical interconnection hole; 3032, first conductive ring structure; 304, first vent hole; 400, a first blocking structure; 401, a second blocking structure; 500, second vent hole; 600. Auxiliary opening structure. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solution and beneficial effects of the present invention more clear, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described in this specification are only for explaining the present invention, not for limiting the present invention.

[0027] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" refers to two or more, unless otherwise clearly and specifically defined.

[0028] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0029] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0030] The embodiment of the present invention discloses an integrated MEMS chip and a manufacturing method thereof, referring to Figure 1 , the manufacturing method of the integrated MEMS chip comprises: S100. Provide a first substrate and a second substrate, wherein a plurality of movable grooves physically isolated from each other are formed on a surface of one side of the first substrate; S200. Fabricating an electrical interconnection structure, the electrical interconnection structure covering a side surface of the second substrate; S300. At least one first vent hole is formed on the electrical interconnection structure, the surface of the second substrate is exposed in the first vent hole, the thickness of the electrical interconnection structure is less than the thickness of the second substrate, or an auxiliary opening structure is formed at the bottom of at least one active groove, the thickness of the auxiliary opening structure is less than the minimum thickness of the first substrate, and a first vent hole is formed on the auxiliary opening structure; S400. Fabricate a plurality of sensor structures, the plurality of sensor structures being located on a side of the first substrate where the plurality of active grooves are formed, connected to the first substrate, the plurality of sensor structures corresponding to the plurality of active grooves one by one, wherein at least one of the plurality of sensor structures corresponds to the first vent hole; S500. Connect the first substrate and the second substrate, form an active gap between a surface of each sensor structure facing away from the first substrate and a surface of the electrical interconnection structure facing away from the second substrate, physically isolate adjacent active gaps, and the active gaps and the active grooves together constitute a deformation space of the corresponding sensor structure, and the projection of the first vent hole is located within the projection of the active gap of the corresponding sensor structure, wherein a plurality of conductors are embedded in the electrical interconnection structure, the conductors correspond to the sensor structures one by one, and the corresponding conductors are electrically connected to the sensor structures; S600. Making at least one second vent hole, the at least one second vent hole corresponds to the at least one first vent hole one by one, and the corresponding second vent hole is connected to the first vent hole, and the air pressure of the corresponding deformation space is adjusted through the connected second vent hole and the first vent hole; S700. Seal the first vent hole and the second vent hole.

[0031] In step S100, the first substrate 100 is provided as Figure 2 Specifically, the number of multiple physically isolated active grooves 101 is set based on the number of sensor structures 110 integrated in the MEMS chip, and each sensor structure 110 is correspondingly provided with an active groove 101. The drawings disclosed in this application all take the MEMS chip integrating two sensor structures 110 as an example.

[0032] Reference Figure 3In step S200 , an electrical interconnection structure 300 is manufactured, and the electrical interconnection structure 300 covers a side surface of the second substrate 200 . Specifically, the electrical interconnection structure 300 is embedded with conductors 302 corresponding to the sensor structure 110 one by one. The manufacturing process of the electrical interconnection structure 300 includes: first manufacturing a first insulating structure 301, the first insulating structure 301 covers a side surface of the second substrate 200; then manufacturing a conductive structure, the conductive structure covers a side surface of the first insulating structure 301 away from the second substrate 200; then removing part of the conductive structure at intervals to form a plurality of conductors 302 arranged at intervals on the first insulating structure 301; then manufacturing a second insulating structure 303, the second insulating structure 303 covers the remaining surface of the first insulating structure 301 away from the second substrate 200 and covers the conductors 302; finally, opening a plurality of electrical interconnection holes 3031, each electrical interconnection hole 3031 passes through the second insulating structure 303, and the plurality of electrical interconnection holes 3031 correspond to the plurality of conductors 302 one by one, and the conductors 302 are exposed in the corresponding electrical interconnection holes 3031. It should be noted that the sum of the thicknesses of the first insulating structure 301 and the second insulating structure 303 is less than the thickness of the second substrate 200. The material of the first insulating structure 301 may be SiO2, SiN or a combination thereof. The material of the conductive structure may be Ti, Cr, TiW, Al, Cu, Au, Ge or a combination thereof. The material of the second insulating structure 303 may be SiO2, SiN or a combination thereof. The second insulating structure 303 covers the conductor 302, which can prevent the conductor 302 from contacting the sensor structure 110 after the first substrate 100 and the second substrate 200 are connected. It should also be noted that the number of conductors 302 is equal to the number of sensor structures 110, and each sensor structure 110 is correspondingly provided with a conductor 302, and the sensor structure 110 can transmit electrical signals to the outside through the corresponding conductor 302. Specifically, after cutting the wafer, the side wall of the conductor 302 can be exposed to be electrically connected to the peripheral circuit, or the second substrate 200 can be etched to expose the conductor 302 to be electrically connected to the peripheral circuit. Such a design can integrate the electrical components of multiple sensor structures 110 on the same substrate, saving space and simplifying the packaging process. At the same time, by directly transmitting electrical signals through the conductors 302 in the electrical interconnection structure 300, the resistance and electrical noise caused by long-distance transmission during signal transmission can be reduced, thereby improving the transmission efficiency and accuracy of the signal.

[0033] In step S300, the first vent hole 304 is made. In different embodiments, the first vent hole 304 is formed in different ways. The following will describe in detail the implementation of the first vent hole 304 in combination with different embodiments: Reference Figure 4, the first embodiment of opening the first ventilation hole 304 is: opening at least one first ventilation hole 304 on the electrical interconnection structure 300, and the number of the first ventilation holes 304 opened depends on the number of sensor structures 110 that need to adjust the air pressure in the deformation space. The first ventilation holes 304 correspond one-to-one to the sensor structures 110 that need to adjust the air pressure in the deformation space, and are connected to the deformation space of the corresponding sensor structure 110 (in other words, in the thickness direction of the second substrate 200, the projection of the corresponding first ventilation hole 304 overlaps with the projection of the sensor structure 110, and the first ventilation hole 304 is directly connected to the active interval 130 of the corresponding sensor structure 110). It should be noted that in the thickness direction of the second substrate 200, the projection of the first ventilation hole 304 does not overlap with the projection of the electrical interconnection hole 3031, and the projection of the first ventilation hole 304 does not overlap with the projection of the conductor 302. In other words, the position where the first ventilation hole 304 is opened avoids the position of the conductor 302 and the position of the electrical interconnection hole 3031. Refer to Figure 8 and Fig.12 , the second embodiment of opening the first ventilation hole 304 is: an auxiliary opening structure 600 is made on the side surface of the first substrate 100 where the active groove 101 is opened. The first ventilation hole 304 is opened on the auxiliary opening structure 600. The method for making the auxiliary opening structure 600 can be: an oxidation treatment is performed on the side surface of the first substrate 100 where the active groove 101 is opened, so that a preset thickness of silicon dioxide is formed on the side surface of the first substrate 100, and the preset thickness of silicon dioxide is the auxiliary opening structure 600, and the thickness of silicon dioxide is less than the thickness of the first substrate 100. The auxiliary opening structure 600 has two structural forms, specifically, referring to Figure 8 The completed auxiliary opening structure 600 covers the first substrate 100 and the groove wall and groove bottom of each active groove 101. Fig.12 The manufactured auxiliary opening structure 600 covers the bottom of at least one active groove 101. When the auxiliary opening structure 600 covers the bottom of at least one active groove 101, the bottom of the active groove 101 covered by the auxiliary opening structure 600 is the bottom of the active groove 101 corresponding to the sensor structure 110 that needs to adjust the air pressure of the deformation space.

[0034] Further, in some embodiments, when the first vent hole 304 in the integrated MEMS chip is opened in the manner of the above-mentioned embodiment 2, the active groove 101 corresponding to the sensor structure 110 that needs to adjust the air pressure in the deformation space includes a main groove 1011 and a secondary groove 1012 that are connected. Each sensor structure 110 includes a working area 111 and a non-working area 112. When the first substrate 100 and the second substrate 200 are bonded, in the thickness direction of the first substrate 100, the projection of the main groove 1011 on the corresponding sensor structure 110 is located in the working area 111 of the sensor structure 110, and the projection of the secondary groove 1012 on the corresponding sensor structure 110 is located in the non-working area 112 of the sensor structure 110, and in the thickness direction of the first substrate 100, the projection of the first vent hole 304 overlaps with the projection of the secondary groove 1012. Specifically, in the case Figure 8 In the auxiliary opening structure 600 shown in FIG. 1 , the first vent hole 304 is formed on the auxiliary opening structure 600 covering the bottom of the secondary groove 1012. Fig.12 In the auxiliary opening structure 600 shown, the auxiliary opening structure 600 covers the bottom of the secondary groove 1012, and the first ventilation hole 304 is opened thereon.

[0035] Compared with directly opening the first vent hole 304 connected to the outside on the first substrate 100 or the second substrate 200, the first vent hole 304 is opened in the first and second embodiments of the present application. The first vent hole 304 is opened on the electrical interconnection structure 300 or the auxiliary opening structure 600 before bonding, and a first vent hole 304 with a smaller aperture can be opened. The first vent hole 304 is directly connected to the deformation space, and the small aperture facilitates the sealing of the first vent hole 304 after the subsequent pressure adjustment is completed, thereby improving the air tightness in the deformation space. In the embodiment disclosed in the present application, the aperture of the first vent hole 304 is between 0.2um and 1um.

[0036] Reference Figure 5 In step S400, a plurality of sensor structures 110 are fabricated on the side of the first substrate 100 where the plurality of active grooves 101 are formed. The plurality of sensor structures 110 correspond to the plurality of active grooves 101 one by one and cover the openings of the active grooves 101. Specifically, the sensor structures 110 are usually fabricated by bonding a silicon wafer to the side of the first substrate 100 where the plurality of active grooves 101 are formed, then thinning and flattening the silicon wafer, and finally patterning and etching the silicon wafer to form a sensor structure 110 above each active groove 101. Figure 8 When the auxiliary opening structure 600 is shown, the silicon wafer is connected to the first substrate 100 by bonding to the surface of the auxiliary opening structure 600 facing away from the first substrate 100 (refer to Fig. 9). When one side surface of the first substrate 100 is manufactured as Fig.12 When the auxiliary opening structure 600 is, or, as Figure 5 When the auxiliary opening structure 600 is not manufactured on the first substrate 100 , the silicon wafer is directly bonded to the surface of the first substrate 100 on which the active groove 101 is formed.

[0037] Reference Figure 6 In step S500, the first substrate 100 and the second substrate 200 are connected. After the first substrate 100 and the second substrate 200 are connected, each sensor structure 110 is electrically connected to the corresponding conductor 302. Specifically, the corresponding conductor 302 and the sensor structure 110 can be electrically connected by the following method. Figure 4 and Figure 5Before connecting the first substrate 100 and the second substrate 200, a plurality of first conductive ring structures 3032 are firstly made on the surface of the second insulating structure 303 facing away from the second substrate 200, and the plurality of first conductive ring structures 3032 correspond to the plurality of conductors 302 one by one, and the first conductive ring structures 3032 are filled in the corresponding electrical interconnection holes 3031 to be electrically connected to the corresponding conductors 302; and a second conductive ring structure 120 is then made on the surface of each sensor structure 110 facing away from the first substrate 100, and the plurality of second conductive ring structures 120 correspond to the plurality of first conductive ring structures 3032 one by one; when connecting the first substrate 100 and the second substrate 200, the corresponding first conductive ring structures 3032 and the second conductive ring structures 120 are connected. It should be noted that, in order to avoid signal interference, there is a gap between two adjacent first conductive ring structures 3032, and there is also a gap between two adjacent second conductive ring structures 120. In this way, the electrical signal output by the sensor structure 110 can be transmitted to the corresponding conductor 302 through the corresponding second conductive ring structure 120 and the first conductive ring structure 3032. By setting the first conductive ring structure 3032 and the second conductive ring structure 120, after the first substrate 100 and the second substrate 200 are connected in step S400, an active gap 130 can be formed between each sensor structure 110 and the second insulating structure 303, and adjacent active gaps 130 can be physically isolated to ensure the airtightness between the deformation spaces. It should be noted that after the first substrate 100 and the second substrate 200 are connected, the projection of the first vent hole 304 is located within the projection of the active gap 130 of the corresponding sensor structure 110, and the active groove 101 and the active gap 130 corresponding to each sensor structure 110 are connected through the sensor structure 110. The material of the first conductive ring structure 3032 and the second conductive ring structure 120 can be the same material, and can be the same as the material of the conductive structure. In step S600, at least one second vent hole 500 is made, and the second vent hole 500 corresponds to the first vent hole 304 and the sensor structure 110 that needs to adjust the air pressure of the deformation space. When the first vent hole 304 is opened on the electrical interconnection structure 300, the corresponding second vent hole 500 is opened on the second substrate 200 (refer to Figure 6 ), when the first vent hole 304 is opened on the auxiliary opening structure 600, the corresponding second vent hole 500 is opened on the first substrate 100 (refer to Fig.10 ).

[0038] In step S700, after the air pressure in the corresponding deformation space is adjusted through the connected second vent hole 500 and the first vent hole 304, the first vent hole 304 and the second vent hole 500 are blocked. Figure 7 or Fig.11In some embodiments, the second vent 500 and the first vent 304 are blocked by the following steps: first, a first blocking structure 400 is made, the first blocking structure 400 covers the inner wall of the second vent 500 and blocks the first vent 304. Specifically, the first blocking structure 400 can be made by evaporation and PVD processes, and evaporation and PVD are both thin film deposition technologies. In the embodiments disclosed in the present application, the aperture of the first vent 304 is between 0.2um and 1um. The above-mentioned thin film deposition technology can form a dense and uniform first blocking structure 400 inside and outside the first vent 304, ensuring that the blocked first vent 304 has good air tightness. Compared with the laser blocking method to block the first vent 304, the thin film deposition technology used in the present application to block the first vent 304 has less thermal impact, avoiding thermal damage to the MEMS chip during the blocking process. Then, a second blocking structure 401 is made, and the second blocking structure 401 fills the second vent 500. The second blocking structure 401 can be formed by electroplating. Making the second blocking structure 401 by electroplating can improve the adhesion of the second blocking structure 401 and ensure that the metal is evenly filled in the second vent 500. Blocking the second vent 500 can further improve the air tightness of the deformation space. It should be noted that the above-mentioned first blocking structure 400 can partially block the first vent 304, or completely block the first vent 304, and the second blocking structure 401 can partially block the second vent 500, or completely block the second vent 500. The material of the first blocking structure 400 can be Ti, Cu, Cr, TiW or related alloy materials. The material of the second blocking structure 401 can be Cu, Ni, Ag, Al or a combination thereof. When manufacturing the first blocking structure 400 and the second blocking structure 401, the first blocking structure 400 will cover the surface of the second substrate 200 facing away from the auxiliary opening structure 600. Therefore, after manufacturing the first blocking structure 400 and the second blocking structure 401, the first blocking structure 400 and the second blocking structure 401 covering the surface of the second substrate 200 can be removed by chemical etching or CMP process.

[0039] Further, in order to prevent the metal molecules from diffusing from the secondary groove 1012 to the main groove 1011 and depositing on the working area 111 of the sensor structure 110 when the thin film deposition technology blocks the first vent hole 304, the present application provides a method for connecting the secondary groove 1012 and the main groove 1011. Specifically, the main groove 1011 and the secondary groove 1012 can be connected through a connecting groove, which is opened on the side surface of the first substrate 100 where the main groove 1011 and the secondary groove 1012 are opened, and is between the main groove 1011 and the secondary groove 1012 to be connected, and the groove depth of the connecting groove is less than the groove depth of the secondary groove 1012 and the groove depth of the main groove 1011. In some embodiments, the groove depth of the secondary groove 1012 is also less than the groove depth of the main groove 1011. It should be noted that the depth of the connecting groove is the distance between the side surface of the first substrate 100 where the main groove 1011 and the secondary groove 1012 are opened and the bottom of the connecting groove. Similarly, the depth of the secondary groove 1012 and the depth of the main groove 1011 can be obtained. With such a design, when the first substrate 100 and the second substrate 200 are bonded, the bottom of the connecting groove and the surface of the sensor structure 110 facing the connecting groove together form a connecting channel between the main groove 1011 and the secondary groove 1012. When adjusting the air pressure in the deformation space, it can be adjusted through the second vent 500-first vent 304-secondary groove 1012-connecting groove-main groove 1011.

[0040] In order to further improve the airtightness of the deformation space, in some embodiments, the aperture of the first vent 304 is smaller than the aperture of the second vent 500 at one end close to the first vent 304. In this way, the first blocking structure 400 can cover the inner wall of the second vent 500, the side surface of the auxiliary opening structure 600 away from the sensor structure 110 (or the side surface of the electrical interconnection structure 300 away from the sensor structure 110) and block the first vent 304. Compared with the case where the aperture of the first vent 304 is equal to the aperture of the second vent 500 at one end close to the first vent 304204, such a setting provides a larger contact area and structural support, which can enhance the mechanical strength of the first blocking structure 400 and reduce the risk of falling off or cracking of the blocking material due to external force or temperature changes during use. Especially for the blocking of thin film materials, a larger contact area can reduce stress concentration and extend the service life of the blocking structure.

[0041] In order to prevent the etching solution from dropping onto the sensor structure 110 through the first vent hole 304 and causing damage to the sensor structure 110 when etching the second vent hole 500, refer to Fig.13In some embodiments, before the first substrate 100 and the second substrate 200 are bonded, the manufacturing method of the integrated MEMS chip further includes manufacturing a protection structure 113 facing the first vent hole 304 on a side surface of the sensor structure 110 facing the first vent hole 304 (i.e., the protection structure 113 corresponds to the first vent hole 304 one by one), and the projection of the protection structure 113 overlaps with the projection of the corresponding first vent hole 304. Specifically, when the first vent hole 304 is opened on the auxiliary opening structure 600, the protection structure 113 is located on a side surface of the sensor structure 110 corresponding to the first vent hole 304 facing the first substrate 100; when the first vent hole 304 is opened on the electrical interconnection structure 300, the protection structure 113 is located on a side surface of the sensor structure 110 corresponding to the first vent hole 304 facing the second substrate 200. The manufacturing steps of the protection structure 113 are as follows: depositing a protection material on the surface of the side of the sensor structure 110 facing the first vent hole 304, the protection material can generally be an insulating material such as SiO2, SiN, etc., and then etching the deposited protection material so that the formed protection structure 113 is a bump protruding on the surface of the side of the first substrate 100 facing the first vent hole 304. After the first substrate 100 and the second substrate 200 are bonded, in the thickness direction of the first substrate 100, the projections of the corresponding first vent holes 304 and the protection structure 113 overlap on the corresponding sensor structure 110. It should be noted that the projection of each first vent hole 304 on the corresponding sensor structure 110 is located in the non-working area 112 of the sensor structure 110, so the protection structure 113 corresponding to each first vent hole 304 is also located in the non-working area 112 of the sensor structure 110. Meanwhile, it should be noted that the thickness of the protection structure 113 is smaller than the thickness of the first conductive ring structure 3032 and also smaller than the thickness of the second conductive ring structure 120 , and there is a gap between the protection structure 113 and the opposite auxiliary opening structure 600 .

[0042] The embodiment of the present invention discloses an integrated MEMS chip, referring to Figure 7 or Fig.13The integrated MEMS chip includes: a first substrate 100, a second substrate 200 and a plurality of sensor structures 110. A plurality of mutually physically isolated active grooves 101 are provided on one side surface of the first substrate 100. The plurality of sensor structures 110 correspond to the plurality of active grooves 101 one by one and are connected to the side surface of the first substrate 100 on which the active grooves 101 are provided. In the thickness direction of the first substrate 100, the projections of the corresponding active grooves 101 and the sensor structures 110 overlap. One side surface of the second substrate 200 is covered with an electrical interconnection structure 300. The side surface of the electrical interconnection structure 300 facing away from the second substrate 200 is connected to the side surface of the sensor structure 110 facing away from the first substrate 100. The thickness of the electrical interconnection structure 300 is less than the thickness of the second substrate 200. An active gap 130 is formed between the side surface of each sensor structure 110 facing away from the first substrate 100 and the side surface of the electrical interconnection structure 300 facing away from the second substrate 200. Adjacent active gaps 130 are physically isolated from each other. The active gaps 130 and the active grooves 101 together constitute the deformation space of the corresponding sensor structure 110.

[0043] Furthermore, a first air vent 304 is provided on the integrated MEMS chip. There are two forms of providing the first air vent 304. The first form is: at least one first air vent 304 that penetrates its own thickness is provided on the electrical interconnect structure 300, the first air vent 304 corresponds to a sensor structure 110 that needs to adjust the deformation space among the multiple sensor structures 110, the first air vent 304 is communicated with the deformation space of the corresponding sensor structure 110, the second substrate 200 has a second air vent 500 that penetrates itself and corresponds to the first air vent 304, the corresponding first air vent 304 is communicated with the second air vent 500, and after the air pressure in the deformation space is adjusted, the first air vent 304 and the second air vent 500 are blocked. The second form is: the bottom of the active groove 101 corresponding to the sensor structure 110 whose deformation space needs to be adjusted is covered with an auxiliary opening structure 600 (the auxiliary opening structure 600 can only cover the bottom of the corresponding active groove 101, or can cover each active groove 101), the thickness of the auxiliary opening structure 600 is less than the minimum thickness of the first substrate 100, and a first ventilation hole 304 is opened on the auxiliary opening structure 600, and the first ventilation hole 304 corresponds to the sensor structure 110 whose deformation space needs to be adjusted among the multiple sensor structures 110, and the first ventilation hole 304 is connected with the deformation space of the corresponding sensor structure 110, and the first substrate 100 has a second ventilation hole 500 corresponding to the first ventilation hole 304 and penetrating through itself, and the corresponding first ventilation hole 304 is connected with the second ventilation hole 500, and after the air pressure in the deformation space is adjusted, the first ventilation hole 304 and the second ventilation hole 500 are blocked.

[0044] Specifically, the electrical interconnection structure 300 includes a first insulating structure 301, a plurality of conductors 302 and a second insulating structure 303. The first insulating structure 301 is connected to a surface of the second substrate 200 opposite to the first substrate 100. The plurality of conductors 302 are arranged at intervals on a surface of the first insulating structure 301 facing away from the second substrate 200. The second insulating structure 303 covers a surface of the first insulating structure 301 on which the conductors 302 are arranged and covers the plurality of conductors 302. The second insulating structure 303 has a plurality of electrical interconnection holes 3031 that penetrate through its thickness. The plurality of electrical interconnection holes 3031 correspond to the plurality of electrical conductors 302 one by one. The electrical conductors 302 are exposed in the corresponding electrical interconnection holes 3031. A plurality of first conductive ring structures 3032 are connected to the surface of the second insulating structure 303 that is away from the first insulating structure 301. The plurality of first conductive ring structures 3032 correspond to the plurality of electrical conductors 302 one by one. The first conductive ring structures 3032 are filled in the corresponding electrical interconnection holes 3031 and are electrically connected to the corresponding electrical conductors 302. It should be noted that the aperture range of the first vent 304 disclosed above is 0.2 μm-1 μm. In addition, in some embodiments, the aperture of the first vent 304 is smaller than the aperture of the second vent 500 at one end close to the first vent 304.

[0045] In some embodiments, each sensor structure 110 includes an operating area 111 and a non-operating area 112 , and in the thickness direction of the first substrate 100 , a projection of each first vent 304 on the corresponding sensor structure 110 is located in the non-operating area 112 of the sensor structure 110 .

[0046] In some embodiments, at least one of the plurality of active grooves 101 includes a main groove 1011 and a secondary groove 1012 that are connected to each other. In the thickness direction of the first substrate 100, a projection of the main groove 1011 on the corresponding sensor structure 110 is located in a working area 111 of the sensor structure 110, and a projection of the secondary groove 1012 on the corresponding sensor structure 110 is located in a non-working area 112 of the sensor structure 110. When the auxiliary opening structure 600 is manufactured at the bottom of at least one active groove 101 , the auxiliary opening structure 600 at least covers the bottom of one of the secondary grooves 1012 .

[0047] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0048] The above embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A method for manufacturing an integrated MEMS chip, characterized in that: include: Providing a first substrate and a second substrate, wherein a plurality of movable grooves physically isolated from each other are formed on a surface of one side of the first substrate; Manufacturing an electrical interconnection structure, wherein the electrical interconnection structure covers a side surface of the second substrate; At least one first vent hole is formed on the electrical interconnection structure, the surface of the second substrate is exposed in the first vent hole, and the thickness of the electrical interconnection structure is less than the thickness of the second substrate; or, an auxiliary opening structure is formed at the bottom of at least one active groove, the thickness of the auxiliary opening structure is less than the minimum thickness of the first substrate, and the first vent hole is formed on the auxiliary opening structure; Manufacturing a plurality of sensor structures, wherein the plurality of sensor structures are located on a side of the first substrate where the plurality of active grooves are formed, and connected to the first substrate, wherein the plurality of sensor structures correspond to the plurality of active grooves one by one, and at least one of the plurality of sensor structures corresponds to the first vent hole; The first substrate and the second substrate are connected, an active gap is formed between a surface of each sensor structure facing away from the first substrate and a surface of the electrical interconnection structure facing away from the second substrate, adjacent active gaps are physically isolated, the active gaps and the active grooves together constitute a deformation space of the corresponding sensor structure, the projection of the first vent hole is located within the projection of the active gap of the corresponding sensor structure, wherein a plurality of conductors are embedded in the electrical interconnection structure, the conductors correspond to the sensor structures one by one, and the corresponding conductors are electrically connected to the sensor structures; Making at least one second vent hole, wherein the at least one second vent hole corresponds to the at least one first vent hole one by one, and the corresponding second vent hole is connected to the first vent hole, and the air pressure of the corresponding deformation space is adjusted through the connected second vent hole and the first vent hole; The first vent hole and the second vent hole are blocked.

2. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that: The fabrication of the electrical interconnection structure comprises: Manufacturing a first insulating structure, wherein the first insulating structure covers a side surface of the second substrate; Manufacturing a conductive structure, wherein the conductive structure covers a surface of the first insulating structure on a side facing away from the second substrate; removing a portion of the conductive structure at intervals to form a plurality of conductors arranged at intervals on the first insulating structure; Manufacturing a second insulating structure, wherein the second insulating structure covers the remaining surface of the first insulating structure facing away from the second substrate and covers the conductor; A plurality of electrical interconnection holes are formed, wherein the electrical interconnection holes penetrate the second insulating structure, and the plurality of electrical interconnection holes correspond to the plurality of electrical conductors one by one, and the electrical conductors are exposed in the corresponding electrical interconnection holes; The sum of the thickness of the first insulating structure and the second insulating structure is less than the thickness of the second substrate.

3. The method for manufacturing an integrated MEMS chip according to claim 2, characterized in that: Before connecting the first substrate and the second substrate, the manufacturing method further includes: A plurality of first conductive ring structures are formed on a surface of the electrical interconnection structure facing away from the second substrate, wherein the plurality of first conductive ring structures correspond to the plurality of electrical conductors one by one, and the first conductive ring structures are filled in the corresponding electrical interconnection holes to be electrically connected to the corresponding electrical conductors; A second conductive ring structure is fabricated on a surface of each sensor structure facing away from the first substrate, wherein a plurality of the second conductive ring structures correspond to a plurality of the first conductive ring structures in a one-to-one manner; When the first substrate and the second substrate are connected, the first conductive ring structure and the second conductive ring structure are connected accordingly.

4. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that: Before connecting the first substrate and the second substrate, the manufacturing method further includes: At least one protective structure is manufactured, wherein the protective structure corresponds to the first ventilation hole one by one, and the protective structure is located on a side surface of the sensor structure opposite to the corresponding first ventilation hole, and the projection of the corresponding protective structure overlaps with the projection of the first ventilation hole in the thickness direction of the first substrate.

5. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that: Each of the sensor structures includes a working area and a non-working area. In the thickness direction of the first substrate, a projection of each of the first ventilation holes on the corresponding sensor structure is located in the non-working area of ​​the sensor structure.

6. The method for manufacturing an integrated MEMS chip according to claim 5, characterized in that: When an auxiliary opening structure is made at the bottom of at least one active groove, at least one active groove includes a main groove and a secondary groove that are connected, and the auxiliary opening structure at least covers the bottom of the secondary groove. When the first substrate and the second substrate are bonded, in the thickness direction of the first substrate, the projection of the main groove on the corresponding sensor structure is located in the working area of ​​the sensor structure, and the projection of the secondary groove on the corresponding sensor structure is located in the non-working area of ​​the sensor structure. After a first ventilation hole is opened on the auxiliary opening structure, the projection of the first ventilation hole overlaps with the projection of the secondary groove.

7. The method for manufacturing an integrated MEMS chip according to claim 6, characterized in that: A connecting groove is provided on a surface of one side of the first substrate where the main groove and the secondary groove are provided, the connecting groove is between the main groove and the secondary groove and is used to connect the main groove and the secondary groove, and the groove depth of the connecting groove is smaller than the groove depth of the secondary groove and the groove depth of the main groove; Wherein, after the first substrate and the second substrate are bonded, the bottom of the connecting groove and the surface of the sensor structure facing the connecting groove together form a connecting channel between the main groove and the secondary groove.

8. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that: The first vent hole has a pore size of 0.2 μm-1 μm.

9. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that: The aperture of the first vent hole is smaller than the aperture of the second vent hole at one end close to the first vent hole.

10. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that: Producing at least one second vent hole comprises: When the first vent hole is formed on the electrical interconnection structure, a second vent hole connected to the first vent hole is formed on the second substrate; When the first ventilation hole is opened on the auxiliary opening structure, a second ventilation hole connected to the first ventilation hole is opened on the first substrate.

11. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that: The blocking of the first vent hole and the second vent hole comprises: Making a first blocking structure, wherein the first blocking structure covers the inner wall of the second vent hole and blocks the first vent hole; A second blocking structure is manufactured, wherein the second blocking structure is filled in the second vent hole.

12. An integrated MEMS chip, characterized in that: include: A first substrate (100), wherein a plurality of movable grooves (101) physically isolated from each other are formed on a surface of one side of the first substrate (100); a plurality of sensor structures (110), the plurality of sensor structures (110) corresponding one to one with the plurality of active grooves (101), and connected to a surface of a side of the first substrate (100) on which the active grooves (101) are provided, and in a thickness direction of the first substrate (100), projections of the corresponding active grooves (101) and the sensor structures (110) overlap; A second substrate (200), wherein a surface of one side of the second substrate (200) is covered with an electrical interconnection structure (300), wherein a plurality of conductors (302) are embedded in the electrical interconnection structure (300), wherein the conductors (302) correspond to the sensor structures (110) one by one, and the corresponding conductors (302) and the sensor structures (110) are electrically connected, and a surface of a side of the electrical interconnection structure (300) facing away from the second substrate (200) and a surface of a side of the sensor structure (110) facing away from the first substrate (100) are connected. The electrical interconnection structure (300) is connected to the first substrate (100), the thickness of the electrical interconnection structure (300) is less than the thickness of the second substrate (200), an active space (130) is formed between a side surface of each sensor structure (110) facing away from the first substrate (100) and a side surface of the electrical interconnection structure (300) facing away from the second substrate (200), adjacent active spaces (130) are physically isolated, and the active space (130) and the active groove (101) together constitute a deformation space of the corresponding sensor structure (110); The electrical interconnection structure (300) has at least one first vent hole (304) that penetrates through its thickness, the first vent hole (304) is connected to the deformation space of one of the plurality of sensor structures (110), the second substrate (200) has at least one second vent hole (500) that penetrates through itself, the first vent hole (304) corresponds to the second vent hole (500) one by one, the corresponding first vent hole (304) is connected to the second vent hole (500), and after the air pressure in the deformation space is adjusted, the first vent hole (304) and the second vent hole (500) are blocked; Or, the bottom of at least one active groove (101) among the multiple active grooves (101) is covered with an auxiliary opening structure (600), the thickness of the auxiliary opening structure (600) is less than the minimum thickness of the first substrate (100), the first ventilation hole (304) is opened on the auxiliary opening structure (600), the first ventilation hole (304) is connected to the deformation space of one of the multiple sensor structures (110), the first substrate (100) has at least one second ventilation hole (500) passing through itself, the first ventilation hole (304) corresponds to the second ventilation hole (500) one by one, the corresponding first ventilation hole (304) is connected to the second ventilation hole (500), after the air pressure in the deformation space is adjusted, the first ventilation hole (304) and the second ventilation hole (500) are blocked.

13. The integrated MEMS chip according to claim 12, characterized in that: The electrical interconnection structure (300) further comprises: a first insulating structure (301) and a second insulating structure (303), wherein the first insulating structure (301) is connected to a surface of the second substrate (200) on one side opposite to the first substrate (100), the plurality of conductors (302) are arranged at intervals on a surface of the first insulating structure (301) on a side facing away from the second substrate (200), and the second insulating structure (303) covers a surface of the first insulating structure (301) on one side where the conductors (302) are arranged and covers the plurality of conductors (302); The second insulating structure (303) has a plurality of electrical interconnection holes (3031) that penetrate the thickness of the second insulating structure (303), the plurality of electrical interconnection holes (3031) correspond one-to-one to the plurality of electrical conductors (302), and the electrical conductors (302) are exposed in the corresponding electrical interconnection holes (3031); a plurality of first conductive ring structures (3032) are connected to a surface of the second insulating structure (303) that is away from the first insulating structure (301), the plurality of first conductive ring structures (3032) correspond one-to-one to the plurality of electrical conductors (302), and the first conductive ring structures (3032) are filled in the corresponding electrical interconnection holes (3031) and are electrically connected to the corresponding electrical conductors (302).

14. The integrated MEMS chip according to claim 12, characterized in that: The aperture of the first ventilation hole (304) is smaller than the aperture of an end of the second ventilation hole (500) close to the first ventilation hole (304).

15. The integrated MEMS chip according to claim 12, characterized in that: Each of the sensor structures (110) comprises a working area (111) and a non-working area (112); in the thickness direction of the first substrate (100), a projection of each of the first ventilation holes (304) on the corresponding sensor structure (110) is located in the non-working area (112) of the sensor structure (110).

16. The integrated MEMS chip according to claim 15, characterized in that: At least one of the plurality of active grooves (101) comprises a main groove (1011) and a secondary groove (1012) which are connected to each other; in the thickness direction of the first substrate (100), a projection of the main groove (1011) on the corresponding sensor structure (110) is located in a working area (111) of the sensor structure (110), and a projection of the secondary groove (1012) on the corresponding sensor structure (110) is located in a non-working area (112) of the sensor structure (110); When the auxiliary opening structure (600) is manufactured at the bottom of at least one active groove (101), the auxiliary opening structure (600) covers the bottom of at least one of the secondary grooves (1012).

Images