Functional film for electronic equipment

Abstract

The invention discloses a functional film for electronic equipment, which is characterized in that the innermost layer of the functional film is an antireflection film layer, and then a superhard film layer and an anti-fingerprint film layer are sequentially covered outwards; a layer of SiO2 film is also plated between the antireflection film layer and the superhard film layer, and a layer of SiO2 film is also plated between the superhard film layer and the anti-fingerprint film layer. And the antireflection film layer is formed by alternately and repeatedly plating a SiO2 film, a Si3N4 film and a SiON film from inside to outside in sequence. And the superhard film layer comprises more than two film layers which are formed by alternately combining and plating Si3N4 films and CNx films in sequence from inside to outside. A SiO2 film is plated between the antireflection film layer and the superhard layer to serve as a first bonding layer, and a SiO2 film is plated between the superhard film layer and the fingerprint-proof film layer to serve as a second bonding layer. According to the functional film disclosed by the invention, the superhard composite film layer is introduced between the antireflection film and the anti-fingerprint film, so that the film has high transmittance, low reflection and fingerprint resistance and also has high hardness.

Description

Technical Field

[0001] The present invention relates to a functional film in the technical field of touch screens, in particular to a functional film used in electronic equipment. Background Art

[0002] With the upgrading of consumer electronic products and people's pursuit of high-quality products, it has become a common practice in the industry to coat the surface of touch screens such as mobile phone front covers with functional films. By coating an anti-reflective film layer and an anti-fingerprint film layer, the display is clearer and has excellent hydrophobic, anti-fingerprint and anti-oil properties.

[0003] However, the anti-reflection film superimposed on the anti-fingerprint film has the defects of low hardness and poor scratch resistance. After using it for a period of time, as the number of times the hand slides on the screen and the friction between clothes increases, the surface film layer will gradually be scratched and fall off, and will lose its excellent performance. Summary of the invention

[0004] The purpose of the present invention is to provide a functional film for a touch screen. In view of the shortcomings of the prior art, a super-hard composite film layer is introduced between the anti-reflection film and the anti-fingerprint film, so that the film has high transmittance, low reflection and anti-fingerprint, and also has high hardness.

[0005] In order to achieve the above-mentioned purpose, the present invention provides a functional film for electronic equipment, wherein the innermost layer of the functional film is an anti-reflection film layer, and then an ultra-hard film layer and an anti-fingerprint film layer are sequentially covered outward; a layer of SiO2 film is also plated between the anti-reflection film layer and the ultra-hard film layer, and a layer of SiO2 film is also plated between the ultra-hard film layer and the anti-fingerprint film layer.

[0006] The above-mentioned functional film for electronic equipment, wherein the anti-reflection film layer is formed by repeated plating of SiO2 film, Si3N4 film and SiON film in sequence from the inside to the outside.

[0007] The above-mentioned functional film for electronic equipment, wherein the anti-reflection film layer, the film structure of the alternately and repeatedly plated film is SiO2 film-(Si3N4 film-SiON film) n , n>1.

[0008] The above-mentioned functional film for electronic equipment, wherein the anti-reflection film layer has a thickness of 200 to 3000 nm.

[0009] The functional film for electronic equipment, wherein the superhard film layer is composed of Si3N4 film and CN x A film layer consisting of two or more layers of films that are alternately plated.

[0010] The functional film for electronic equipment, wherein the superhard film layer has a structure of (Si3N4 film-CN x membrane) m , m>1.

[0011] The above-mentioned functional film for electronic equipment, wherein, in the functional film, a SiO2 film is plated between the anti-reflection film layer and the superhard layer as the first bonding layer, and a SiO2 film is plated between the superhard film layer and the anti-fingerprint film layer as the second bonding layer.

[0012] The above-mentioned functional film for electronic equipment, wherein the functional film is attached to a substrate material; the substrate material is any one of glass, tempered glass, and microcrystalline glass.

[0013] The functional film for electronic equipment provided by the present invention has the following advantages:

[0014] The present invention introduces a super-hard composite film layer between the anti-reflection film and the anti-fingerprint film, and respectively plates SiO2 film between the anti-reflection film layer and the super-hard layer, and between the super-hard film layer and the anti-fingerprint film layer, so that the product has high transmittance, low reflection and anti-fingerprint, as well as high hardness and high wear resistance. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram of the functional film structure of the present invention.

[0016] Figure 2 Schematic diagram of each film layer of the functional film of the present invention.

[0017] Among them, 1. substrate; 2. anti-reflection film layer; 21. SiO2 film layer; 22. Si3N4 film layer; 23. SiON film layer; 3. first bonding layer; 4. superhard film layer; 5. second bonding layer; 6. anti-fingerprint film layer. DETAILED DESCRIPTION

[0018] The specific implementation of the present invention will be further described below in conjunction with the accompanying drawings.

[0019] The functional film for electronic devices provided by the present invention has an anti-reflection film layer 2 as the innermost layer, and is then covered with an ultra-hard film layer 4 and an anti-fingerprint film layer 6 in sequence; that is, from the inside to the outside, it is covered with an anti-reflection film layer, an ultra-hard film layer, and an anti-fingerprint film layer in sequence. A layer of SiO2 film is also plated between the anti-reflection film layer and the ultra-hard film layer as the first bonding layer 3, and a layer of SiO2 film is also plated between the ultra-hard film layer and the anti-fingerprint film layer as the second bonding layer 5. Figure 1 shown.

[0020] Preferably, the anti-reflection film layer is formed by alternately and repeatedly coating a SiO2 film layer 21, a Si3N4 film layer 22 and a SiON film layer 23 from the inside to the outside.

[0021] The anti-reflection film layer is alternately and repeatedly plated with a film structure of SiO2 film-(Si3N4 film-SiON film) n , n>1.

[0022] The thickness of the anti-reflection film layer is 200 to 3000 nm. The light transmittance is improved by controlling the thickness.

[0023] The superhard film layer is composed of Si3N4 film and CN from the inside to the outside. x A film layer (film system) consisting of two or more layers of films deposited alternately.

[0024] The structure of the superhard film layer is (Si3N4 film-CN x membrane) m , m>1.

[0025] The super-hard film layer uses silicon nitride to improve the optical properties of the film layer, and uses the carbon nitride layer as a functional layer to enhance the hardness.

[0026] A SiO2 film is plated between the anti-reflection film layer and the superhard layer of the functional film as the first bonding layer, which can improve the bonding force between the anti-reflection film layer and the superhard layer, thereby improving the stability of the film layer and preventing it from falling off or sliding.

[0027] A SiO2 film is plated between the superhard film layer and the anti-fingerprint film layer as a second bonding layer, which can improve the bonding force between the superhard layer and the anti-fingerprint film layer and enhance the wear resistance.

[0028] The functional film is attached to a substrate 1 material; the substrate material is any one of glass, tempered glass, and microcrystalline glass. The substrate 1 has the advantage of high light transmittance.

[0029] The functional film for electronic equipment provided by the present invention is further described below in conjunction with embodiments.

[0030] Example 1

[0031] A functional film for electronic equipment, the innermost layer of which is an anti-reflection film layer, which is then covered with an ultra-hard film layer and an anti-fingerprint film layer in sequence; a layer of SiO2 film is also plated between the anti-reflection film layer and the ultra-hard film layer, and a layer of SiO2 film is also plated between the ultra-hard film layer and the anti-fingerprint film layer.

[0032] Preferably, the anti-reflection film layer is formed by alternately and repeatedly coating SiO2 film, Si3N4 film and SiON film from the inside to the outside.

[0033] The anti-reflection film layer is alternately and repeatedly plated with a film structure of SiO2 film-(Si3N4 film-SiON film) n , n>1. For example: SiO2 film-Si3N4 film-SiON film-Si3N4 film-SiON film-Si3N4 film-SiON film-Si3N4 film-SiON film-Si3N4 film-SiON film.

[0034] The thickness of the anti-reflection film layer is 200-800 nm.

[0035] The superhard film layer is composed of Si3N4 film and CN from the inside to the outside. x A film layer consisting of two or more layers of films that are alternately plated.

[0036] The structure of the superhard film layer is (Si3N4 film-CN x membrane) m , m>1. For example: Si3N4 film-CN x Membrane-Si3N4 membrane-CN x membrane.

[0037] A SiO2 film is plated between the anti-reflection film layer and the superhard layer of the functional film as a first bonding layer, and a SiO2 film is plated between the superhard film layer and the anti-fingerprint film layer as a second bonding layer.

[0038] The functional film is attached to a substrate material; the substrate material is glass.

[0039] Example 2

[0040] A functional film for electronic equipment, the innermost layer of which is an anti-reflection film layer, which is then covered with an ultra-hard film layer and an anti-fingerprint film layer in sequence; a layer of SiO2 film is also plated between the anti-reflection film layer and the ultra-hard film layer, and a layer of SiO2 film is also plated between the ultra-hard film layer and the anti-fingerprint film layer.

[0041] Preferably, the anti-reflection film layer is formed by alternately and repeatedly coating SiO2 film, Si3N4 film and SiON film from the inside to the outside.

[0042] The anti-reflection film layer is alternately and repeatedly plated with a film structure of SiO2 film-(Si3N4 film-SiON film) n , n>1. For example: SiO2 film-Si3N4 film-SiON film-Si3N4 film-SiON film.

[0043] The thickness of the anti-reflection film layer is 800-1500 nm.

[0044] The superhard film layer is composed of Si3N4 film and CN from the inside to the outside. x A film layer consisting of two or more layers of films that are alternately plated.

[0045] The structure of the superhard film layer is (Si3N4 film-CNx membrane) m , m>1. For example: Si3N4 film-CN x Membrane-Si3N4 membrane-CN x Membrane-Si3N4 membrane-CN x membrane.

[0046] A SiO2 film is plated between the anti-reflection film layer and the superhard layer of the functional film as a first bonding layer, and a SiO2 film is plated between the superhard film layer and the anti-fingerprint film layer as a second bonding layer.

[0047] The functional film is attached to a substrate material; the substrate material is tempered glass.

[0048] Example 3

[0049] A functional film for electronic equipment, the innermost layer of which is an anti-reflection film layer, which is then covered with an ultra-hard film layer and an anti-fingerprint film layer in sequence; a layer of SiO2 film is also plated between the anti-reflection film layer and the ultra-hard film layer, and a layer of SiO2 film is also plated between the ultra-hard film layer and the anti-fingerprint film layer.

[0050] Preferably, the anti-reflection film layer is formed by alternately and repeatedly coating SiO2 film, Si3N4 film and SiON film from the inside to the outside.

[0051] The anti-reflection film layer is alternately and repeatedly plated with a film structure of SiO2 film-(Si3N4 film-SiON film) n , n>1. For example: SiO2 film-Si3N4 film-SiON film-Si3N4 film-SiON film-Si3N4 film-SiON film.

[0052] The thickness of the antireflection film layer is 1500-3000 nm.

[0053] The superhard film layer is composed of Si3N4 film and CN from the inside to the outside. x A film layer consisting of two or more layers of films that are alternately plated.

[0054] The structure of the superhard film layer is (Si3N4 film-CN x membrane) m , m>1. For example: Si3N4 film-CN x Membrane-Si3N4 membrane-CN x Membrane-Si3N4 membrane-CN x Membrane-Si3N4 membrane-CN x membrane.

[0055] A SiO2 film is plated between the anti-reflection film layer and the superhard layer of the functional film as a first bonding layer, and a SiO2 film is plated between the superhard film layer and the anti-fingerprint film layer as a second bonding layer.

[0056] The functional film is attached to a substrate material; the substrate material is microcrystalline glass.

[0057] Example 4

[0058] A functional film for electronic devices, the substrate material (substrate) is any one of glass, tempered glass, and microcrystalline glass. Above the substrate, from inside to outside, it is covered with an anti-reflection film layer, a super-hard film layer, and an anti-fingerprint film layer.

[0059] On the substrate, SiO2 film, Si3N4 film and SiON film are alternately and repeatedly plated to form an anti-reflection film layer. The thickness of the anti-reflection film layer is 200-3000nm. By superimposing the anti-reflection film layer on the super-hard film layer, the transmittance is increased, making the display clearer.

[0060] The super hard coating layer is made of Si3N4 film and CN x The film is alternately plated in two or more layers, which increases the hardness of the film layer.

[0061] A SiO2 film layer is plated between the anti-reflection film layer and the super-hard film layer as the first bonding layer to improve the bonding force between the film layers, thereby improving the stability of the film layers.

[0062] A SiO2 film layer is plated between the anti-fingerprint film layer and the super-hard film layer as a second bonding layer to improve the bonding force between the super-hard layer and the anti-fingerprint film layer and enhance the wear resistance.

[0063] Example 5

[0064] A functional film in Embodiment 4 adopts the following coating process:

[0065] First, an anti-reflection film layer 2 is plated on a glass substrate 1, using SiO2 film layer 21, Si3N4 film layer 22 and SiON film layer 23 alternately and repeatedly, and the film thickness is controlled by a crystal controller. The thickness of the anti-reflection film layer 2 is 200-3000nm.

[0066] The SiO2 film process parameter settings of the SiO2 film layer 21 are: target power 8-20KW, voltage 200-1000V, argon flow rate 100-800sccm, oxygen flow rate 100-1000sccm.

[0067] The Si3N4 film process parameter settings of the Si3N4 film layer 22 are: target power 8-20KW, voltage 200-1000V, argon flow rate 100-800sccm, and nitrogen flow rate 100-1000sccm.

[0068] The SiON film process parameter settings of the SiON film layer 23 are: target power 8-20KW, voltage 200-1000V, argon flow rate 100-800sccm, nitrogen flow rate 100-1000sccm, oxygen flow rate 100-1000sccm.

[0069] Then, SiO2 film is plated on the anti-reflection film layer 2 as the first bonding layer 3, and the process parameters are set as follows: target power 6-18KW, voltage 200-1000V, argon gas supply 100-800sccm, oxygen gas supply 100-1000sccm, and film thickness 5-30nm.

[0070] Then, a superhard film layer 4 is plated on the first bonding layer 3, using Si3N4 film and CN x The films are plated in alternating combinations.

[0071] The process parameter settings of Si3N4 film are: target power 8~20KW, voltage 200-1000V, argon flow rate 50~600sccm, and nitrogen flow rate 100~600sccm.

[0072] CN x The film is made by direct current sputtering. High-purity nitrogen and argon are filled into the high vacuum coating chamber. Argon is used as auxiliary sputtering gas with a flow rate of 50-600sccm. Nitrogen is used as reaction gas with a flow rate of 60-600sccm. The graphite target is sputtered by high-power method with a current of 8-30A. The carbon atoms sputtered by high current have high energy density and can fully combine with nitrogen ions to form stable carbon nitride.

[0073] Then, a SiO2 film is plated on the superhard film layer 4 to serve as the second bonding layer 5. The process parameters are set the same as those of the first bonding layer 3.

[0074] Finally, the anti-fingerprint film layer 6 is plated by evaporation, and the anti-fingerprint solution is uniformly evaporated onto the film surface of the product by resistance heating.

[0075] The process parameters of anti-fingerprint film evaporation are: heating current 200~600A, film thickness 15~200nm.

[0076] The structure of each film layer of the obtained functional film can be found in Figure 2 shown.

[0077] The production equipment and other process conditions used above are known to those skilled in the art.

[0078] The functional film product obtained in Example 5 was subjected to performance testing, and the results are as follows.

[0079] 1. Hardness test results:

[0080] Mohs hardness: 7.

[0081] Nanoindentation hardness (HIT): 19GPa.

[0082] Elastic modulus (EIT): 199 GPa.

[0083] 2. Abrasion resistance test:

[0084] Rubber friction resistance: After 8000 eraser cycle test, water drop angle ≥100°.

[0085] The functional film for electronic equipment provided by the present invention mainly introduces a superhard composite film layer between the anti-reflection film and the anti-fingerprint film. Through the structure and the coating process method, a functional film with high transmittance, low reflection and anti-fingerprint as well as high hardness and high wear resistance can be obtained, which can be widely used in the field of electronic products.

[0086] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A functional film for electronic equipment, characterized in that: The functional film has an anti-reflection film layer as the innermost layer, and is then covered with a super-hard film layer and an anti-fingerprint film layer in sequence; a layer of SiO2 film is also plated between the anti-reflection film layer and the super-hard film layer, and a layer of SiO2 film is also plated between the super-hard film layer and the anti-fingerprint film layer.

2. The functional film for electronic equipment according to claim 1, characterized in that: The anti-reflection film layer is formed by repeatedly coating SiO2 film, Si3N4 film and SiON film in sequence from the inside to the outside.

3. The functional film for electronic equipment according to claim 2, characterized in that: The anti-reflection film layer has a film structure of SiO2 film-(Si3N4 film-SiON film) that is alternately and repeatedly plated. n , n>1.

4. The functional film for electronic equipment according to claim 3, characterized in that: The thickness of the anti-reflection film layer is 200-3000nm.

5. The functional film for electronic equipment according to claim 1, characterized in that: The superhard film layer is composed of Si3N4 film and CN x A film layer consisting of two or more layers of alternately deposited films.

6. The functional film for electronic equipment according to claim 5, characterized in that: The superhard film layer has a structure of (Si3N4 film-CN x membrane) m , m>1.

7. The functional film for electronic equipment according to claim 1, characterized in that: In the functional film, a SiO2 film is plated between the anti-reflection film layer and the superhard layer as a first bonding layer, and a SiO2 film is plated between the superhard film layer and the anti-fingerprint film layer as a second bonding layer.

8. The functional film for electronic equipment according to claim 7, characterized in that: The functional film is attached to a substrate material; the substrate material is any one of glass, tempered glass and microcrystalline glass.

Images