Method for controlling consistent rotation of wafer based on Spindle rotation

Abstract

The invention discloses a method for controlling consistent rotation of wafers based on Spindle rotation. The method comprises the following steps: S1, acquiring a wafer ID sequence of a to-be-coated wafer in a wafer box and a process chamber station sequence; s2, according to the station sequence of the process chamber, a wafer to be subjected to film coating treatment is put into the process chamber; a Spindle rotation control strategy is constructed according to the number of the wafers placed in the process chamber and a preset wafer coating process formula; s3, based on the constructed Spindle rotation control strategy, coating treatment on the wafer to be coated is achieved, and the wafer after coating is completed is put into a preset wafer storage chamber; according to the invention, the problem that the thickness of the wafer subjected to film coating treatment is not uniform due to different types of equipment for wafer film coating when the wafer is subjected to film coating treatment independently through a corresponding film coating head traditionally is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer coating, and in particular to a method for controlling the uniform rotation of a wafer based on Spindle rotation. Background Art

[0002] At present, the wafer coating process is based on the traditional wafer coating process, and each wafer in the wafer process chamber is coated by the coating equipment, and the wafer in each position chamber in the wafer process chamber is individually coated by a corresponding coating head. However, due to the different models of equipment for wafer coating, the thickness of the wafers after coating will be uneven, and even when the equipment models for wafer coating are the same, there will be slight deviations in the working performance of each coating head during coating, resulting in different thicknesses of all wafers in the chamber, which greatly reduces the accuracy and quality of wafer coating. Summary of the invention

[0003] The present invention provides a method for controlling the uniform rotation of wafers based on Spindle rotation, so as to overcome the above technical problems.

[0004] In order to achieve the above object, the technical solution of the present invention is:

[0005] A method for controlling wafer uniform rotation based on Spindle rotation includes the following steps:

[0006] S1: Obtain the wafer ID sequence and process chamber station sequence of the wafer to be coated in the wafer box;

[0007] S2: According to the process chamber station sequence, the wafer to be coated is placed into the process chamber;

[0008] And build a spindle rotation control strategy based on the wafers placed in the process chamber station sequence and the preset wafer coating process recipe;

[0009] S3: Based on the constructed Spindle rotation control strategy, the coating process of the wafer to be coated is realized, and the wafer after coating is placed in the preset wafer storage room;

[0010] Step S2 is then repeated until the coating operation of all wafers to be coated in the wafer ID sequence is completed.

[0011] Furthermore, the spindle rotation control strategy described in S2 is specifically as follows:

[0012] S21: placing the wafer to be coated into each process chamber according to the wafer ID sequence through the wafer conveyor, scanning and detecting, and obtaining a detection sequence of whether there is a wafer in the corresponding process chamber;

[0013] The detection sequence includes station numbers where wafers exist and station numbers where wafers do not exist;

[0014] S22: based on the detection sequence, according to the wafer coating process recipe and the process chamber station sequence, obtain the spindle rotation data;

[0015] The spindle rotation data includes a rotation angle θ R , the number of rotations κ and the coating time t of a single coating showerhead R ;

[0016] S23: setting a wafer coating strategy of the wafer coating shower head according to the Spindle rotation data;

[0017] And according to the wafer coating strategy, the on-off control of the wafer coating shower head is realized.

[0018] Furthermore, the rotation angle θ R The calculation formula is θ R =360° / n;

[0019] The execution rotation number κ=n-1;

[0020] The execution rotation time t R The calculation formula is t R =T / n, where T represents the total process time of the wafer coating process recipe; n represents the number of process chambers in the current wafer box.

[0021] Furthermore, the wafer coating strategy is specifically as follows:

[0022] S231: Spindle initialization operation;

[0023] The initialization operation is when the wafer in the process chamber is initially coated, firstly the wafer coating shower head is rotated to the top of the process chamber by controlling the Spindle, and the straight line where the center of the wafer coating shower head is located coincides with the straight line where the center of the process chamber station is located, and then the Spindle is kept stationary;

[0024] S232: Encode the wafer coating shower head that is rotated by the Spindle to obtain the wafer coating shower head ID, and perform an initial alignment operation with the process chamber station sequence according to the wafer coating shower head ID;

[0025] The initial registration operation is specifically to match the station position in the process chamber station sequence with the wafer coating shower head with the corresponding ID number, that is,

[0026] {station1,station2,station3,station4}={ID1,ID2,ID3,ID4};

[0027] S233: judging whether there are wafers to be coated in each station in the process chamber according to the detection sequence; if there are wafers to be coated in each station, executing step S234;

[0028] Otherwise, execute step S237;

[0029] S234: According to the coating time t of a single coating spray head R Performing a coating operation on the wafer in the process chamber, and continuing to execute step S235 after the coating operation is completed;

[0030] S235: By controlling the Spindle to rotate at an angle θ R Rotate clockwise or counterclockwise to achieve relative rotation between the wafer coating shower head and the process chamber;

[0031] S236: When the rotation angle θ is executed and completed R After the rotation, steps S234 to S235 are repeated until the number of rotations κ is reached, the coating of the wafer in the process chamber is completed, and the Spindle initialization operation and the initial alignment operation are performed again;

[0032] S237: According to the detection sequence, a current coating matching sequence corresponding to the wafer coating shower head ID of the process chamber station is obtained, and the current coating matching sequence is used as an initial coating matching sequence;

[0033] S238: Control according to the initial coating matching sequence

[0034] The wafer coating shower head arranged opposite to the process chamber station where the wafer is located is turned on;

[0035] The wafer coating shower head arranged opposite to the process chamber station where no wafer exists is closed;

[0036] And according to the coating time t of a single coating spray head R Performing a coating operation on the wafer in the process chamber, and executing step S239 after the coating is completed;

[0037] S239: By controlling the Spindle to rotate at an angle θ R Rotate clockwise or counterclockwise to achieve relative rotation between the wafer coating shower head and the process chamber;

[0038] Then, according to the detection sequence, a current coating matching sequence of the wafer coating shower head corresponding to the process chamber is obtained, and the current coating matching sequence is used as an initial coating matching sequence;

[0039] S2310: Repeat steps S238 to S239 until the number of rotations κ is reached, the coating of the wafer in the process chamber is completed, and the Spindle initialization operation and the initial alignment operation are performed again.

[0040] Further, the wafer ID sequence described in S1 is specifically: obtained by scanning and encoding the wafers to be coated in the wafer box;

[0041] The process chamber station sequence is specifically obtained by encoding the stations of each process chamber in a clockwise or counterclockwise direction.

[0042] Beneficial effect: The present invention provides a method for controlling the uniform rotation of wafers based on Spindle rotation. According to the process chamber station sequence and the preset wafer coating process recipe, a Spindle rotation control strategy is constructed to realize the coating treatment of the wafer to be coated, which solves the problem of uneven thickness of the wafer after coating due to different equipment models for wafer coating in the traditional method of coating the wafer alone, thereby greatly improving the accuracy and quality of wafer coating. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0044] Figure 1 It is a flow chart of the method for controlling wafer uniform rotation based on Spindle rotation of the present invention;

[0045] Figure 2 This is a schematic diagram of the process chamber station sequence in this embodiment;

[0046] Figure 3 Schematic diagram of the Spindle rotation control process when wafers are present in all process chamber stations in this embodiment;

[0047] Figure 4 FIG. 4 is a schematic diagram of the spindle rotation control flow when wafers are not evenly distributed in the process chamber stations in this embodiment. DETAILED DESCRIPTION

[0048] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0049] This embodiment provides a method for controlling the uniform rotation of wafers based on Spindle rotation, such as Figure 1 As shown, the following steps are included:

[0050] S1: Obtain the wafer ID sequence and process chamber station sequence of the wafer to be coated in the wafer box;

[0051] Specifically, the wafer ID sequence is obtained by scanning and encoding the wafers to be coated in the wafer box; the process chamber station sequence is obtained by encoding the stations of each process chamber in a clockwise or counterclockwise direction;

[0052] S2: Place the wafer to be coated into the process chamber according to the process chamber station sequence; and build a spindle rotation control strategy based on the wafer placed in the process chamber station sequence and the preset wafer coating process recipe;

[0053] Specifically, the Spindle rotation control strategy is as follows:

[0054] S21: placing the wafer to be coated into each process chamber according to the wafer ID sequence through the wafer conveyor, scanning and detecting, and obtaining a detection sequence of whether there is a wafer in the corresponding process chamber;

[0055] The detection sequence includes station numbers where wafers exist and station numbers where wafers do not exist;

[0056] S22: Based on the detection sequence, the wafer coating process recipe and the process chamber station sequence are used to obtain the Spindle rotation data; the Spindle rotation data includes the rotation angle θ R , the number of rotations κ and the coating time t of a single coating showerhead R ;

[0057] In a specific embodiment, the rotation angle θ R The calculation formula is θ R=360° / n; preferably, the number of stations in the process chamber station sequence is 4, then the rotation angle θ R is 90°;

[0058] The number of rotations performed κ=n-1; preferably, the number of stations in the process chamber station sequence is 4, then the number of rotations performed is 3, and the angle of each rotation is 90°, that is, 90°, 180° and 270° respectively relative to the defined initial rotation position;

[0059] The execution rotation time t R The calculation formula is t R =T / n, where T represents the total process time of the wafer coating process recipe; n represents the number of process chambers in the current wafer box;

[0060] Preferably, the number of stations in the process chamber station sequence is 4, and if the total time of the wafer coating process recipe is 100 seconds, the coating time for the wafer in each station is 25 seconds;

[0061] S23: according to the Spindle rotation data, a wafer coating strategy of the wafer coating shower head is set; and according to the wafer coating strategy, the on / off control of the wafer coating shower head is realized; wherein the wafer coating strategy is specifically:

[0062] S231: Spindle initialization operation;

[0063] The initialization operation is to control the spindle to rotate the support ring for moving and supporting the wafer to the corresponding process chamber station when the wafer in the process chamber is initially coated, and each wafer coating spray is set above the corresponding process chamber station, and the straight line where the center of the wafer coating spray head is located coincides with the straight line where the center of the process chamber station is located, and then keep the spindle stationary; wherein the process chamber station and the wafer coating spray head are fixedly mounted on a preset mounting platform;

[0064] S232: Encode each wafer coating shower head to obtain the wafer coating shower head ID, and perform an initial alignment operation according to the wafer coating shower head ID and the process chamber station sequence;

[0065] The initial registration operation is specifically to match the station position in the process chamber station sequence with the wafer coating shower head with the corresponding ID number, that is,

[0066] {station1,station2,station3,station4}={ID1,ID2,ID3,ID4}

[0067] S233: judging whether there are wafers to be coated in each station in the process chamber according to the detection sequence; if there are wafers to be coated in each station, executing step S234;

[0068] Otherwise, execute step S237;

[0069] S234: According to the coating time t of a single coating spray head R Performing a coating operation on the wafer in the process chamber, and continuing to execute step S235 after the coating operation is completed;

[0070] S235: Control the Spindle to drive the support ring to rotate at an angle θ R Rotate clockwise or counterclockwise to achieve relative rotation between the wafer coating shower head and the wafer in the process chamber station;

[0071] For example Figures 2 to 3 As shown, this process chamber includes 4 station positions, and the process task includes a 2×2station operation mode or a 1×4station operation mode. When the process task is the 1×4station operation mode, only one Spindle rotation control strategy needs to be executed on each process chamber station wafer to realize the wafer coating process. When the process task is the 2×2station operation mode, firstly, a wafer is placed in each of the two adjacent station positions in the process chamber, and a coating process is performed based on the Spindle rotation control strategy. After the two wafers initially placed complete a coating process, wafers are placed in the other two station positions in the process chamber. At this time, there are four wafers in the process chamber. The four wafers are subjected to the coating process based on the Spindle rotation control strategy. Then, the wafers that have undergone the coating process twice are taken out, and new wafers to be coated are placed, and the above operation is repeated.

[0072] In a specific embodiment, taking the process task as 1×4station operation mode as an example, the station positions of the wafers in the current detection sequence are station1, station2, station3, station4; then the detection sequence at this time is {station1, station2, station3, station4} = {1, 1, 1, 1}, where 1 indicates that there is a wafer; the IDs of the wafer coating shower heads corresponding to the process chamber stations are ID1, ID2, ID3, ID4, and the station positions that match the detection sequence are The current coating matching sequence is {ID1, ID2, ID3, ID4}, that is, wafer coating shower head ID1 corresponds to station1; wafer coating shower head ID2 corresponds to station2; wafer coating shower head ID3 corresponds to station3; wafer coating shower head ID4 corresponds to station4; and at this time, wafer coating shower head ID1, wafer coating shower head ID2, wafer coating shower head ID3 and wafer coating shower head ID4 are all turned on; when each coating shower head performs coating operation on the wafer in the corresponding station position, the coating time reaches t R When the tray is raised by the Spindle, the tray is first controlled to rise by a set distance, and then the tray is controlled to rotate clockwise by an angle of θ. R , and finally control the tray to descend to the adjacent station position to realize the wafer rotation operation;

[0073] S236: When the rotation angle θ is executed and completed R After the rotation, steps S234 to S235 are repeated until the number of rotations κ is reached, the coating of the wafer in the process chamber is completed, and the Spindle initialization operation and the initial alignment operation are performed again;

[0074] Specifically, if the entire wafer coating process recipe requires 100 seconds and has 4 positions, then according to the existing programming software or technology, 4 steps can be written when the program is written, and the coating process time of each step is 25 seconds. In order to ensure uniform film growth, this embodiment sets a process parameter at the end of 25 seconds of each step, that is, "SpindleIndex=>90°". In this way, when executing the wafer coating process recipe, the program will read this step and it will become=>Step1 runs for 25 seconds; Step2Spindle turns 90°; Step3 runs for 25 seconds; Step4Spindle turns 90°; Step5 runs for 25 seconds; Step6Spindle turns 90°; Step7 runs for 25 seconds; Step8Spindle turns 90°; wherein the wafer coating process recipe is an existing well-known technical means, not the invention point of the present application, and will not be repeated here;

[0075] S237: According to the detection sequence, a current coating matching sequence corresponding to the wafer coating shower head ID of the process chamber station is obtained, and the current coating matching sequence is used as an initial coating matching sequence;

[0076] Specifically, Figure 4 As shown, this process chamber includes 4 station positions, and the station positions where wafers exist in the current detection sequence are station1, station2, station3, station4; then the detection sequence at this time is {station1, station2, station3, station4} = {1, 1, 0, 0}, where 1 indicates that a wafer exists; 0 indicates that a wafer does not exist;

[0077] The wafer coating shower head IDs corresponding to the process chamber stations are ID1, ID2, ID3, and ID4, and the current coating matching sequence that matches the detection sequence is {ID1, ID2, ID3, and ID4}, that is, wafer coating shower head ID1 corresponds to station1; wafer coating shower head ID2 corresponds to station2; wafer coating shower head ID3 corresponds to station3; wafer coating shower head ID4 corresponds to station4; and at this time, wafer coating shower head ID1 and wafer coating shower head ID2 are turned on, and wafer coating shower head ID3 and wafer coating shower head ID4 are turned off;

[0078] S238: Controlling, according to the initial coating matching sequence, the wafer coating shower head arranged opposite to the process chamber station where the wafer exists to be turned on, and the wafer coating shower head arranged opposite to the process chamber station where the wafer does not exist to be turned off;

[0079] And according to the coating time t of a single coating spray head R Performing a coating operation on the wafer in the process chamber, and executing step S239 after the coating is completed;

[0080] S239: Control the Spindle to drive the support ring to rotate at an angle θ R Rotate clockwise or counterclockwise to achieve relative rotation between the wafer coating shower head and the wafer in the process chamber;

[0081] Then, according to the detection sequence, a current coating matching sequence of the wafer coating shower head corresponding to the process chamber is obtained, and the current coating matching sequence is used as an initial coating matching sequence;

[0082] Specifically, Figure 4 As shown in FIG. 1 , when each coating spray head performs coating operation on the wafer in the corresponding station position, the coating time reaches t RWhen the wafer is moved up by the tray, the spindle is used to control the tray to move the wafer up by a set distance, and then the tray is controlled to rotate clockwise by an angle of θ. R Finally, the tray is controlled to descend to the adjacent station position to realize the first Spindle rotation operation;

[0083] After the first Spindle rotation operation is performed, the rotation angle θ R After rotating 90° clockwise, the detection sequence of the process chamber is {station1,station2,station3,station4}={0,1,1,0}, and the on / off status of the current coating matching sequence {ID1, ID2, ID3, ID4} that matches the detection sequence is as follows: the wafer coating shower head ID1 corresponding to station1 is closed; the wafer coating shower head ID2 corresponding to station2 is opened; the wafer coating shower head ID3 corresponding to station3 is opened; the wafer coating shower head ID4 corresponding to station4 is closed, and so on.

[0084] S2310: Repeat steps S238 to S239 until the number of rotations κ is reached, the coating of the wafer in the process chamber is completed, and the Spindle initialization operation and the initial alignment operation are performed again;

[0085] Specifically, Figure 4 As shown, after the second Spindle rotation operation is performed, the detection sequence of the process chamber at this time is {station1, station2, station3, station4} = {0, 0, 1, 1}, and the opening and closing conditions of the current coating matching sequence {ID1, ID2, ID3, ID4} that matches the detection sequence at this time are as follows: the wafer coating shower head ID1 corresponding to station1 is closed; the wafer coating shower head ID2 corresponding to station2 is closed; the wafer coating shower head ID3 corresponding to station3 is opened; the wafer coating shower head ID4 corresponding to station4 is opened;

[0086] After the third Spindle rotation operation is performed, the detection sequence of the process chamber is {station1, station2, station3, station4} = {1, 0, 0, 1}, and the opening and closing status of the current coating matching sequence {ID1, ID2, ID3, ID4} that matches the detection sequence at this time is that the wafer coating shower head ID1 corresponding to station1 is turned on; the wafer coating shower head ID2 corresponding to station2 is turned off; the wafer coating shower head ID3 corresponding to station3 is turned off; the wafer coating shower head ID4 corresponding to station4 is turned on; and it is confirmed that the third Spindle rotation operation executed at this time reaches the execution rotation number κ, and the coating task is completed;

[0087] S3: Based on the constructed Spindle rotation control strategy, the coating process of the wafer to be coated is realized, and the wafer after coating is placed in a preset wafer storage chamber; and step S2 is repeated until the coating operation of all the wafers to be coated in the wafer ID sequence is completed.

[0088] In this embodiment, a Spindle rotation control strategy is constructed according to the process chamber station sequence and the preset wafer coating process recipe, so as to realize the coating treatment of the wafer to be coated. This solves the problem of uneven thickness of the wafer after coating due to different equipment models for wafer coating in the traditional process of coating the wafer by a corresponding coating head alone, thereby improving the success rate of film growth and greatly improving the accuracy and quality of wafer coating.

[0089] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for controlling wafer uniform rotation based on Spindle rotation, characterized in that: The following steps are involved: S1: Obtain the wafer ID sequence and process chamber station sequence of the wafer to be coated in the wafer box; S2: According to the process chamber station sequence, the wafer to be coated is placed into the process chamber; And build a spindle rotation control strategy based on the wafers placed in the process chamber station sequence and the preset wafer coating process recipe; S3: Based on the constructed Spindle rotation control strategy, the coating process of the wafer to be coated is realized, and the wafer after coating is placed in the preset wafer storage room; Step S2 is then repeated until the coating operation of all wafers to be coated in the wafer ID sequence is completed.

2. The method for controlling wafer uniform rotation based on spindle rotation according to claim 1, characterized in that: The spindle rotation control strategy described in S2 is specifically: S21: placing the wafer to be coated into each process chamber according to the wafer ID sequence through the wafer conveyor, scanning and detecting, and obtaining a detection sequence of whether there is a wafer in the corresponding process chamber; The detection sequence includes station numbers where wafers exist and station numbers where wafers do not exist; S22: Based on the detection sequence, the spindle rotation data is obtained according to the wafer coating process recipe and the process chamber station sequence; The spindle rotation data includes a rotation angle θ R , the number of rotations κ and the coating time t of a single coating showerhead R ; S23: setting a wafer coating strategy of the wafer coating shower head according to the Spindle rotation data; And according to the wafer coating strategy, the on-off control of the wafer coating shower head is realized.

3. The method for controlling wafer uniform rotation based on spindle rotation according to claim 2, characterized in that: The rotation angle θ R The calculation formula is θ R =360°n; The execution rotation number κ=n-1; The execution rotation time t R The calculation formula is t R =T / n, where T represents the total process time of the wafer coating process recipe; n represents the number of stations in the process chamber of the current wafer box.

4. The method for controlling wafer uniform rotation based on spindle rotation according to claim 1, characterized in that: The wafer coating strategy is specifically as follows: S231: Spindle initialization operation; The initialization operation is when the wafer in the process chamber is initially coated, firstly, the support ring for moving and supporting the wafer is rotated to the corresponding process chamber station by controlling the Spindle, and each wafer coating spray head is arranged above the corresponding process chamber station, the straight line where the center of the wafer coating spray head is located coincides with the straight line where the center of the process chamber station is located, and then the Spindle is kept stationary; S232: Encode each wafer coating shower head to obtain the wafer coating shower head ID, and perform an initial alignment operation according to the wafer coating shower head ID and the process chamber station sequence; The initial registration operation is specifically to match the station position in the process chamber station sequence with the wafer coating shower head with the corresponding ID number, that is, {station1,station2,station3,station4}={ID1,ID2,ID3,ID4} S233: judging whether there are wafers to be coated in each station in the process chamber according to the detection sequence; if there are wafers to be coated in each station, executing step S234; Otherwise, execute step S237; S234: According to the coating time t of a single coating spray head R Performing a coating operation on the wafer in the process chamber, and continuing to execute step S235 after the coating operation is completed; S235: Control the Spindle to drive the support ring to rotate at an angle θ R Rotate clockwise or counterclockwise to achieve relative rotation between the wafer coating shower head and the wafer in the process chamber station; S236: When the rotation angle θ is executed and completed R After the rotation, steps S234 to S235 are repeated until the number of rotations κ is reached, the coating of the wafer in the process chamber is completed, and the Spindle initialization operation and the initial alignment operation are performed again; S237: According to the detection sequence, a current coating matching sequence corresponding to the wafer coating shower head ID of the process chamber station is obtained, and the current coating matching sequence is used as an initial coating matching sequence; S238: Matching sequence control according to initial coating The wafer coating shower head arranged opposite to the process chamber station where the wafer is located is turned on; The wafer coating shower head arranged opposite to the process chamber station where no wafer exists is closed; And according to the coating time t of a single coating spray head R Performing a coating operation on the wafer in the process chamber, and executing step S239 after the coating is completed; S239: Control the Spindle to drive the support ring to rotate at an angle θ R Rotate clockwise or counterclockwise to achieve relative rotation between the wafer coating shower head and the wafer in the process chamber; Then, according to the detection sequence, a current coating matching sequence of the wafer coating shower head corresponding to the process chamber is obtained, and the current coating matching sequence is used as an initial coating matching sequence; S2310: Repeat steps S238 to S239 until the number of rotations κ is reached, the coating of the wafer in the process chamber is completed, and the Spindle initialization operation and the initial alignment operation are performed again.

5. The method for controlling wafer uniform rotation based on spindle rotation according to claim 1, characterized in that: The wafer ID sequence described in S1 is specifically: obtained by scanning and encoding the wafers to be coated in the wafer box; The process chamber station sequence is specifically obtained by encoding the stations of each process chamber in a clockwise or counterclockwise direction.

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