Semiconductor vapor deposition equipment and semiconductor vapor deposition method

Abstract

The invention provides semiconductor vapor deposition equipment and a semiconductor vapor deposition method. The semiconductor vapor deposition equipment provided by the invention comprises a supporting part used for bearing a substrate; the gas supply device is provided with a protective gas cavity, a vacuumizing cavity and a gas supply cavity, a protective gas outlet, a vacuumizing inlet and a gas supply outlet are formed in the first end, in the first direction, of the gas supply device, protective gas in the protective gas cavity can be discharged from the protective gas outlet, and gas in the gas supply cavity can be discharged from the gas supply outlet; the protective gas outlet and the vacuumizing inlet are annular; and the vacuumizing device is communicated with the vacuumizing cavity so as to vacuumize the vacuumizing cavity. Therefore, the semiconductor vapor deposition equipment disclosed by the invention has the advantage that the film layer can be conveniently cleaned and formed on the local part of the substrate.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor vapor deposition, and in particular to a semiconductor vapor deposition device and a semiconductor vapor deposition method. Background Art

[0002] As microelectronics technology develops towards the post-Moore era, the manufacturing process of microelectronic and optoelectronic devices has become increasingly complex. Selective epitaxy is a very advanced and widely used process that can epitaxially grow a film layer of target material at a specified location on a substrate without affecting other locations on the substrate. The selective epitaxy process requires the preparation of a mask on the substrate to cover non-target areas, and the selective epitaxy is performed at the location where the mask window is opened. This technology is relatively mature and has been widely used, but it still has some disadvantages or limitations, such as complex mask deposition and window opening processes, the difficulty of the mask layer being compatible with existing structures or materials on the substrate, and the difficulty of the selective epitaxy temperature being compatible with existing structures or materials on the substrate, etc., that is, it is difficult to perform vapor deposition on local differences of the substrate in the related technology. Summary of the invention

[0003] The present invention aims to solve one of the technical problems in the related art at least to a certain extent. To this end, an embodiment of the present invention provides a semiconductor vapor deposition device and a semiconductor vapor deposition method.

[0004] The semiconductor vapor deposition device according to the embodiment of the present invention comprises:

[0005] A support portion, the support portion being used to carry a substrate;

[0006] A gas supply device, the gas supply device having a protective gas chamber, a vacuum chamber and a gas supply chamber, the gas supply device having a protective gas outlet, a vacuum inlet and a gas supply outlet at a first end in a first direction, the protective gas in the protective gas chamber can be discharged from the protective gas outlet, the gas in the gas supply chamber can be discharged from the gas supply outlet, the protective gas outlet and the vacuum inlet are both annular, the protective gas outlet is arranged in an annular shape on the outside of the vacuum inlet, the vacuum inlet is arranged in an annular shape on the outside of the gas supply outlet, the protective gas outlet, the vacuum inlet and the gas supply outlet of the gas supply device are facing one side in the first direction of the thickness direction of the substrate;

[0007] A vacuum pumping device is connected to the vacuum pumping chamber so as to vacuum the vacuum pumping chamber.

[0008] Therefore, the semiconductor vapor deposition equipment according to the embodiment of the present invention has the advantage of being convenient for cleaning a film layer and forming a film layer locally on a substrate.

[0009] The semiconductor vapor deposition equipment according to the embodiment of the present invention includes a heating device, and the heating device is used to heat a substrate.

[0010] The semiconductor vapor deposition equipment of an embodiment of the present invention includes a vacuum chamber, the vacuum pumping device can evacuate the vacuum chamber, the support part, the gas supply device and the heating device are all located in the vacuum chamber, the heating device is used to heat a local area of ​​the substrate, and the gas supply outlet can spray epitaxial gas or cleaning gas toward the substrate.

[0011] In some embodiments, the first direction is an up-down direction, and the protective gas outlet, the vacuum inlet, and the gas supply outlet of the gas supply device face downward;

[0012] The gas outlet direction of the protective gas outlet is arranged to be inclined outward in the first direction away from the protective gas outlet;

[0013] The vacuum chamber includes a first vacuum sub-chamber adjacent to the vacuum inlet, and a diameter of the first vacuum sub-chamber increases in a direction adjacent to the vacuum inlet in the first direction.

[0014] In some embodiments, the angle between the outlet direction of the protective gas outlet and the first direction is greater than or equal to 0° and less than or equal to 45°;

[0015] The gas supply device includes a protective gas pipeline, a vacuum pipeline and a gas supply pipeline. The protective gas pipeline is arranged on the outside of at least part of the vacuum pipeline, and the protective gas pipeline and the vacuum pipeline define the protective gas cavity and the protective gas outlet. The vacuum pipeline is arranged on the outside of at least part of the gas supply pipe section, and the vacuum pipeline and the gas supply pipeline define the vacuum cavity and the vacuum inlet. The vacuum pipeline includes a first pipe section adjacent to the vacuum inlet, and the inner diameter and the outer diameter of the first pipe section increase in the first direction along the direction adjacent to the vacuum inlet. The protective gas pipeline includes a second pipe section adjacent to the protective gas outlet, and the inner diameter of the second pipe section increases in the first direction along the direction adjacent to the vacuum inlet.

[0016] In some embodiments, the air supply device includes a plurality of air supply cavities and a plurality of air supply outlets, each of the air supply cavities is connected to at least one of the air supply outlets, and each of the air supply cavities cooperates with a control valve;

[0017] There are multiple air supply pipelines, and each of the air supply pipelines defines an air supply cavity;

[0018] Alternatively, a plurality of air supply sub-pipelines are provided in the air supply pipeline, and each of the air supply cavities is connected to at least one of the air supply sub-pipelines;

[0019] Alternatively, a plurality of partitions are provided in the air supply pipeline, and the plurality of partitions and the air supply pipeline define a plurality of the air supply cavities.

[0020] In some embodiments, the heating device is located below the substrate, and the heating device includes a heating part and a cooling part, the heating part is used to heat the substrate, the cooling part is used to cool the substrate, the cooling part is arranged around the outside of the heating part, and the outer contours of the heating part and the cooling part are both circular; or, the outer contours of the heating part and the cooling part are both rectangular;

[0021] Each of the air supply cavities is communicated with a plurality of the air supply outlets, and the plurality of the air supply outlets of each of the air supply cavities are arranged at intervals.

[0022] In some embodiments, the gas supply device comprises a carrier gas pipeline, a carrier gas outlet of the carrier gas pipeline faces the substrate in the first direction, the carrier gas outlet is located inside the vacuum inlet, the carrier gas outlet is adjacent to the gas supply outlet, and the heating device is used to heat the carrier gas in the carrier gas pipeline;

[0023] At least one of the carrier gas outlet and the gas supply outlet is arranged obliquely so that the gases ejected from the carrier gas outlet and the gas supply outlet have a convergence point;

[0024] The carrier gas outlet and the gas supply outlet discharge gas alternately in sequence; or, the carrier gas outlet and the gas supply outlet discharge gas simultaneously.

[0025] In some embodiments, the gas supply device and the substrate are relatively movable in a second direction, and the second direction is perpendicular to the first direction;

[0026] The support portion is located at the lower side of the air supply device, the support portion is connected to the moving portion, and the moving portion can drive the support portion to move in the second direction;

[0027] The outer diameter of the air supply outlet is greater than or equal to 5 mm and less than or equal to a first preset value;

[0028] The distance between the protective gas outlet, the vacuum inlet and the gas supply outlet of the gas supply device and the substrate in the first direction is greater than or equal to 1 mm and less than or equal to 10 mm;

[0029] A vacuum gauge is provided in the vacuum chamber;

[0030] A temperature measuring device for measuring the temperature of the substrate is provided in the vacuum chamber;

[0031] A mass spectrometer is arranged in the vacuum chamber and the vacuum chamber.

[0032] The present invention also provides a semiconductor vapor deposition method using the semiconductor vapor deposition device, comprising the following steps:

[0033] Using a vacuum pumping device to evacuate the vacuum chamber and the vacuum chamber, using a protective gas outlet to spray protective gas to the substrate so as to form a protective gas wall between the substrate and the protective gas outlet, using a heating device to heat the preset epitaxial position of the substrate, and using a gas supply outlet to spray epitaxial gas to the preset epitaxial position of the substrate so as to epitaxially form a preset material film layer at the preset epitaxial position;

[0034] Alternatively, a vacuum chamber and a vacuum cavity are evacuated using a vacuum pump, a protective gas is sprayed toward the substrate using a protective gas outlet so as to form a protective gas wall between the substrate and the protective gas outlet, and a cleaning gas is sprayed toward the preset cleaning position of the substrate using a gas supply outlet so as to remove the film layer at the preset cleaning position. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 is a schematic diagram of a semiconductor vapor deposition device according to an embodiment of the present invention.

[0036] Figure 2 is a cross-sectional view of a semiconductor vapor deposition apparatus according to an embodiment of the present invention.

[0037] Figure 3 is a schematic diagram of a semiconductor vapor deposition apparatus according to yet another embodiment of the present invention.

[0038] Figure 4 is a cross-sectional view of a semiconductor vapor deposition apparatus according to still another embodiment of the present invention.

[0039] Figure 5 is a schematic diagram of a heating device according to an embodiment of the present invention.

[0040] Figure 6 is a schematic diagram of a heating device according to another embodiment of the present invention.

[0041] Figure 7 is a schematic diagram of a gas supply pipeline according to an embodiment of the present invention.

[0042] Figure 8 is a schematic diagram of a gas supply pipeline according to yet another embodiment of the present invention.

[0043] Fig. 9 is a schematic diagram of a gas supply pipeline according to yet another embodiment of the present invention.

[0044] Reference numerals:

[0045] 1. Shielding gas pipeline, 11. Shielding gas chamber, 12. Shielding gas outlet;

[0046] 2. vacuum pipeline, 21. vacuum chamber, 22. vacuum inlet;

[0047] 3. gas supply pipeline, 31. gas supply outlet, 32. gas supply sub-pipeline;

[0048] 4. carrier gas pipeline, 41. carrier gas outlet;

[0049] 5. Substrate;

[0050] 6. Heating device, 61. Heating unit, 62. Refrigeration unit. DETAILED DESCRIPTION

[0051] Embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and intended to be used to explain the present invention, but should not be understood as limiting the present invention.

[0052] The semiconductor vapor deposition apparatus according to an embodiment of the present invention is described below with reference to the accompanying drawings. Figures 1 to 9 As shown, the semiconductor vapor deposition equipment according to the embodiment of the present invention includes a supporting portion, a gas supply device, a vacuum pumping device, a heating device 6 and a vacuum chamber.

[0053] The gas supply device has a protective gas chamber 11, a vacuum chamber 21 and a gas supply chamber. The first end of the gas supply device in the first direction is provided with a protective gas outlet 12, a vacuum inlet 22 and a gas supply outlet 31. The protective gas outlet 12 is connected with the protective gas chamber 11. The protective gas in the protective gas chamber 11 can be discharged from the protective gas outlet 12. The vacuum inlet 22 is connected with the vacuum chamber 21. The gas in the gas supply chamber can be discharged from the gas supply outlet 31. The gas supply outlet 31 is connected with the gas supply chamber. For example, the protective gas outlet 12, the vacuum inlet 22 and the gas supply outlet 31 are provided at the lower end of the gas supply device.

[0054] The shielding gas outlet 12 and the vacuum inlet 22 are both annular, and the shielding gas outlet 12 is arranged outside the vacuum inlet 22, and the vacuum inlet 22 is arranged outside the gas supply outlet 31, that is, the shielding gas outlet 12, the vacuum inlet 22 and the gas supply outlet 31 are arranged in sequence from the outside to the inside. The shielding gas outlet 12, the vacuum inlet 22 and the gas supply outlet 31 of the gas supply device are facing one side of the thickness direction of the substrate 5 in the first direction.

[0055] The vacuum pumping device is connected to the vacuum pumping chamber 21 so as to vacuum the vacuum pumping chamber 21. The support portion is used to carry the substrate 5. The heating device 6 is used to heat the substrate 5. The vacuum pumping device can vacuum the vacuum chamber, and the support portion, the gas supply device and the heating device 6 are all located in the vacuum chamber, and the heating device 6 is used to heat a local area of ​​the substrate 5. That is, the support portion, the gas supply device and the heating device 6 are all located in a vacuum environment. For example, the vacuum pumping device is a vacuum pump group, and the vacuum pump group includes at least one of a mechanical pump and a vortex molecular pump. The support portion is a sample holder.

[0056] The gas supply outlet 31 can spray epitaxial gas or cleaning gas toward the substrate 5. Therefore, when it is necessary to form an epitaxial film on a part of the substrate 5, the epitaxial gas can be sprayed toward the substrate 5 by using the gas supply outlet 31, so that the epitaxial gas is deposited on the part of the substrate 5. When it is necessary to clean a local film layer of the substrate 5, the cleaning gas can be sprayed toward the substrate 5 by using the gas supply outlet 31, so as to clean the local film layer. The vacuum inlet 22 is a (circular) annular vacuum inlet arranged on the outside of the gas supply outlet 31, so that when the vacuum device vacuums the vacuum chamber 21, the escaped epitaxial gas or cleaning gas can enter the vacuum chamber 21 through the vacuum inlet 22, thereby preventing the epitaxial gas or cleaning gas from affecting other areas of the substrate 5. An annular protective gas outlet 12 is provided outside the vacuum inlet 22. The protective gas ejected from the protective gas outlet 12 and not participating in the reaction can form an annular gas wall, that is, a gas wall is formed between the gas supply device and the substrate 5 to further prevent the escape of the epitaxial gas or the cleaning gas, thereby further preventing the escape of the epitaxial gas or the cleaning gas, and further preventing the epitaxial gas or the cleaning gas from affecting other areas of the substrate 5. The gas of the gas wall is extracted by the vacuum device matched with the vacuum chamber, which can also prevent the epitaxial gas or the cleaning gas from affecting other areas of the substrate 5.

[0057] In some embodiments, the first direction is an up-down direction, and the protective gas outlet 12 , the vacuum inlet 22 , and the gas supply outlet 31 of the gas supply device face downward.

[0058] In some embodiments, the gas outlet direction of the shielding gas outlet 12 is tilted outward in the first direction away from the shielding gas outlet 12. Specifically, the gas ejected from the shielding gas outlet 12 is tilted outward in the first direction away from the shielding gas outlet 12. The angle between the gas outlet direction of the shielding gas outlet 12 and the first direction is greater than or equal to 0° and less than or equal to 45°, so that the gas wall formed by the gas ejected from the shielding gas outlet 12 is trumpet-shaped. For example, the angle between the gas outlet direction of the shielding gas outlet 12 and the up-down direction is 30°.

[0059] In some embodiments, the vacuum chamber 21 includes a first vacuum sub-chamber adjacent to the vacuum inlet 22, and the diameter of the first vacuum sub-chamber increases in a first direction adjacent to the vacuum inlet 22, thereby increasing the area of ​​the vacuum inlet 22. For example, the diameter of the first vacuum sub-chamber increases downward.

[0060] In some embodiments, the gas supply device includes a protective gas pipeline 1 , a vacuum pipeline 2 and a gas supply pipeline 3 .

[0061] The shielding gas pipeline 1 is arranged at least partially outside the vacuum pipeline 2, and the shielding gas pipeline 1 and the vacuum pipeline 2 define a shielding gas chamber 11 and a shielding gas outlet 12, and at least a portion of the outer surface of the vacuum pipeline 2 constitutes the wall surface of the shielding gas chamber 11. The vacuum pipeline 2 is arranged at least partially outside the gas supply pipe section, and the vacuum pipeline 2 and the gas supply pipeline 3 define a vacuum chamber 21 and a vacuum inlet 22, and at least a portion of the outer surface of the gas supply pipeline 3 constitutes the wall surface of the vacuum chamber 21.

[0062] The vacuum pipe 2 includes a first pipe section adjacent to the vacuum inlet 22 , and the inner diameter and outer diameter of the first pipe section increase in a first direction adjacent to the vacuum inlet 22 , thereby enabling the diameter of the first vacuum sub-chamber to increase in the first direction adjacent to the vacuum inlet 22 .

[0063] The shielding gas pipeline 1 includes a second pipe section adjacent to the shielding gas outlet 12, and the inner diameter of the second pipe section increases in the first direction along the direction adjacent to the vacuum inlet 22, so that the second pipe section and the first pipe section can be matched, so that the portion of the cavity of the shielding gas pipeline 1 adjacent to the shielding gas outlet 12 is trumpet-shaped, and the gas ejected from the shielding gas outlet 12 is tilted outward in the first direction away from the shielding gas outlet 12, so that the angle between the outlet direction of the shielding gas outlet 12 and the first direction is greater than or equal to 0° and less than or equal to 45°. The outlet direction of the annular shielding gas outlet 12 is tilted outward in the direction away from the shielding gas outlet 12, so that the shielding gas outlet 12 forms a conical gas wall.

[0064] like Figures 7 to 9As shown, in some embodiments, the gas supply device includes a plurality of gas supply cavities and a plurality of gas supply outlets 31, each gas supply cavity is connected to at least one gas supply outlet 31, and each gas supply cavity cooperates with a control valve. Thus, different epitaxial gases and cleaning gases can be discharged through different gas supply outlets 31 to avoid the memory effect caused by the mixing of different gas sources. The outer diameter of the gas supply outlet 31 is greater than or equal to 5 mm and less than or equal to the first preset value, so that the area of ​​the epitaxial gas and cleaning gas sprayed to the substrate 5 can be smaller, thereby improving the deposition and cleaning accuracy. And the pressure of the gas supply outlet 31 can be controlled by the control valve to ensure that when the valve is opened, the gas can directly reach the epitaxial surface of the liner 5, and is not sucked away by the vacuum inlet 22 of the intermediate layer before reaching the epitaxial surface.

[0065] In some embodiments, the distance between the protective gas outlet 12, the vacuum inlet 22, and the gas supply outlet 31 of the gas supply device and the substrate 5 in the first direction is greater than or equal to 1 mm and less than or equal to 10 mm. For example, the distance between the protective gas outlet 12, the vacuum inlet 22, and the gas supply outlet 31 of the gas supply device and the substrate 5 in the first direction is 3 mm, 5 mm, 6 mm, or 8 mm.

[0066] like Figure 4 As shown, in some embodiments, there are multiple air supply pipes 3 , and each air supply pipe 3 defines an air supply cavity and an air supply outlet 31 .

[0067] In some embodiments, a plurality of air supply sub-pipelines 32 are provided in the air supply pipeline 3 , and each air supply cavity is connected to at least one air supply sub-pipeline 32 .

[0068] Specifically, Figure 7 As shown, when the overall size of the gas supply pipeline 3 is relatively small (when the diameter of the gas supply pipeline 3 is 5mm-10mm), each gas supply cavity is connected to a gas supply sub-pipeline 32 (each gas supply sub-pipeline 32 defines a gas supply cavity), and each gas supply sub-pipeline 32 supplies a gas. When the overall size of the gas supply pipeline 3 is relatively large (when the diameter of the gas supply pipeline 3 is greater than 10mm), each gas supply cavity is connected to multiple gas supply sub-pipelines 32, and the outlets of the gas supply sub-pipelines 32 define gas supply outlets 31, that is, each gas supply cavity is connected to multiple gas supply outlets 31, and the multiple gas supply outlets 31 of each gas supply cavity are arranged at intervals. For example, multiple gas supply outlets 31 of multiple gas supply cavities are mixed and arranged in the gas supply pipeline 3, so that the multiple gas supply outlets 31 of each gas supply cavity are evenly distributed in the gas supply pipeline 3. The numbers in each gas supply sub-pipeline 32 represent pipelines that transport a gas.

[0069] like Fig. 9As shown, in some embodiments, a plurality of partitions are provided in the gas supply pipeline 3, and the plurality of partitions and the gas supply pipeline 3 define a plurality of gas supply cavities (a plurality of gas supply outlets 31). For example, the plurality of gas supply cavities are arranged at intervals along the circumferential direction. The number in each gas supply outlet 31 represents an outlet for delivering a gas.

[0070] The heating device 6 performs local heating on the substrate 5. It is necessary to achieve heating of the target area while trying to prevent the heat from dissipating outside the target area.

[0071] like Figure 5 and Figure 6 As shown, in some embodiments, the heating device 6 is located below the substrate 5, and the substrate 5 is located between the heating device 6 and the gas supply device. The heating device 6 includes a heating portion 61 and a refrigeration portion 62, the heating portion 61 is used to heat the substrate 5, and the refrigeration portion 62 is used to cool the substrate 5. The refrigeration portion 62 is arranged on the outside of the heating portion 61, so that the heating portion 61 can only heat a part of the substrate 5, and the refrigeration portion 62 reduces the influence of the heating portion 61 on other areas of the substrate 5. Specifically, the heating portion 61 is an electric heating device, and the refrigeration portion 62 includes a refrigeration tube arranged on the heating portion 61, and there is a refrigeration liquid in the refrigeration tube. For example, the refrigeration tube is bent in a plurality of circles along the circumferential direction. The refrigeration liquid is liquid nitrogen (LN2) or other liquid with a lower temperature provided by an external refrigeration device.

[0072] like Figure 5 As shown, in some embodiments, the outer circumferences of the heating portion 61 and the cooling portion 62 are both circular.

[0073] like Figure 6 As shown, in some embodiments, the outer contours of the heating portion 61 and the cooling portion 62 are both rectangular.

[0074] In some embodiments, the gas supply device includes a carrier gas pipeline 4, a carrier gas outlet 41 of the carrier gas pipeline 4 faces the substrate 5 in a first direction, the carrier gas outlet 41 is located on the inner side of the vacuum inlet 22, and the carrier gas outlet 41 is adjacent to the gas supply outlet 31, and the heating device 6 is used to heat the carrier gas in the carrier gas pipeline 4. Specifically, the heating device 6 is a heating wire arranged around the outside of the carrier gas pipeline 4, and an insulation layer is provided on the outside of the heating wire. The heating device 6 is located on the outside of the protective gas pipeline 1. In some cases, this is to prevent the heating area from being too large, the presence of temperature-sensitive structures or devices on the back of the substrate 5, etc. After the heating device 6 heats the carrier gas, the carrier gas is sprayed toward the substrate 5 so that the carrier gas heats a local area (epitaxial surface) of the substrate 5. As Figure 4 As shown, the carrier gas pipeline 4 is separated from the plurality of gas supply pipelines 3 and is wrapped with a heat preservation layer around it. The nozzles of each gas pipeline point to the same position, that is, the target position of the localized extension.

[0075] At least one of the carrier gas outlet 41 and the gas supply outlet 31 is tilted so that the gases ejected from the carrier gas outlet 41 and the gas supply outlet 31 have a convergence point. Thus, the positions at which the carrier gas outlet 41 and the gas supply outlet 31 spray toward the substrate 5 are the same, thereby facilitating the deposition of the epitaxial gas on the substrate 5 to form an epitaxial film layer.

[0076] In some embodiments, the carrier gas outlet 41 and the gas supply outlet 31 discharge gases alternately in sequence, so that the epitaxial film layer can be multi-layered.

[0077] In some embodiments, the carrier gas outlet 41 and the gas supply outlet 31 discharge gas simultaneously, which can improve the deposition efficiency.

[0078] In some embodiments, the gas supply device and the substrate 5 can move relative to each other in a second direction, and the second direction is perpendicular to the first direction. The support portion is located at the lower side of the gas supply device, and the support portion is connected to the moving portion, and the moving portion can drive the support portion to move in the second direction. Specifically, the second direction is a horizontal direction, and the moving portion can drive the support portion to move in the horizontal direction, so as to drive the substrate 5 to move in the horizontal direction.

[0079] The semiconductor vapor deposition equipment according to an embodiment of the present invention includes a sample transfer chamber and a low-pressure steam liquid source supply device, and the moving part can move the substrate 5 from the sample transfer chamber to the vacuum chamber. The low-pressure steam liquid source supply device can supply protective gas and carrier gas. Specifically, the protective gas and carrier gas include but are not limited to hydrogen (H2), helium (He), neon (Ne), argon (Ar) and nitrogen (N2). The epitaxial gas includes but is not limited to various alkanes (C n H 2n+2 ), various silanes (Si n H 2n+2 ), various types of germanium (Ge n H 2n+2 ), various stannanes (SnH4, SnD4), phosphine (PH3), arsine (AsH3), antimonane (SbH3), diborane (B2H6), oxygen (O2), etc. The cleaning gas is used for local cleaning and etching of the surface of the substrate 5, including but not limited to: hydrogen fluoride (HF), hydrogen chloride (HCl), chlorine (Cl2), sulfur hexafluoride (SF6), nitrogen trifluoride (NF3), etc.

[0080] A vacuum gauge is provided in the vacuum chamber 21 , and the vacuum gauge can detect the vacuum degree of the vacuum chamber 21 .

[0081] A temperature measuring device for measuring the temperature of the substrate 5 is provided in the vacuum chamber. Specifically, the temperature measuring device can measure the temperature of a local area of ​​the substrate 5 .

[0082] A mass spectrometer is provided in the vacuum chamber and the vacuum chamber 21 so as to measure the molecular weight in the vacuum chamber and the vacuum chamber 21 by the mass spectrometer.

[0083] The present invention also provides a semiconductor vapor deposition method using the semiconductor vapor deposition device according to the embodiment of the present invention. The semiconductor vapor deposition method according to the embodiment of the present invention comprises the following steps:

[0084] The vacuum chamber and the vacuum chamber 21 are evacuated by a vacuum pumping device, and a protective gas is sprayed toward the substrate 5 by the protective gas outlet 12 so as to form a protective gas wall between the substrate 5 and the protective gas outlet 12. The preset epitaxial position of the substrate 5 is heated by the heating device 6, and the epitaxial gas is sprayed toward the preset epitaxial position of the substrate 5 by the gas supply outlet 31 so as to epitaxially grow a preset material film layer at the preset epitaxial position.

[0085] In the first embodiment, the cleaned silicon substrate 5 to be processed is placed on a sample holder, the vacuum degree of the vacuum chamber is evacuated to 1E-5Pa or below, and oxygen is introduced into the target position of the heated silicon substrate 5 to form a surface SiO2 layer (silicon dioxide layer).

[0086] In the second embodiment, the silicon substrate 5 to be processed is placed on the sample holder, the vacuum degree of the vacuum chamber is evacuated to 1E-5Pa or below, and a suitable type of germane is directly introduced into the target position of the heated substrate 5 to achieve epitaxy of intrinsic germanium material on the silicon surface.

[0087] In the third embodiment, a silicon substrate 5 to be processed is placed on a sample holder, the vacuum degree of the vacuum chamber is pumped to 1E-5Pa or below, and appropriate types of germane and doping gas (such as phosphine or diborane) are directly introduced into the target position of the heated substrate 5 to achieve epitaxy of germanium-doped materials on the silicon surface. This embodiment can also be applied to epitaxial growth of germanium-doped semiconductor materials on a germanium substrate 5.

[0088] In the fourth embodiment, a silicon substrate 5 to be processed is placed on a sample holder, the vacuum degree of the vacuum chamber is evacuated to 1E-5Pa or below, and a suitable type of germanium (such as Ge2H6) and a SnC l4 The carrier gas of the present invention can realize the epitaxy of the intrinsic germanium-tin alloy material on the silicon surface. This embodiment can also be applied to epitaxially grow the intrinsic germanium-tin alloy semiconductor material on the germanium substrate 5.

[0089] Alternatively, the vacuum chamber and the vacuum chamber 21 are evacuated by a vacuum pump, the protective gas outlet 12 is used to spray the protective gas to the substrate 5 so as to form a protective gas wall between the substrate 5 and the protective gas outlet 12, and the cleaning gas is sprayed to the preset cleaning position of the substrate 5 by the gas supply outlet 31 so as to remove the film layer at the preset cleaning position. For example, the substrate 5 to be processed is placed on the sample holder, the vacuum degree of the vacuum chamber is pumped to 1E-5Pa or less, the valves of the sample transfer chamber and the reaction chamber are opened, and the sample transfer is completed by the moving part (sample transfer rod). HF gas (hydrogen fluoride gas) is introduced to the target surface to remove the surface SiO2 layer (silicon dioxide layer).

[0090] Therefore, the semiconductor vapor deposition apparatus according to the embodiment of the present invention has the advantage of facilitating the cleaning and formation of film layers on a local portion of the substrate 5. Therefore, the semiconductor vapor deposition method according to the embodiment of the present invention has the advantage of facilitating the cleaning and formation of film layers on a local portion of the substrate 5.

[0091] In the description of the present invention, it is to be understood that the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0092] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0093] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection, an electrical connection, or communication with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0094] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0095] In the present invention, the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" etc. mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the described specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0096] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A semiconductor vapor deposition device, characterized in that: include: A support portion, the support portion being used to carry a substrate; A gas supply device, the gas supply device having a protective gas chamber, a vacuum chamber and a gas supply chamber, the gas supply device having a protective gas outlet, a vacuum inlet and a gas supply outlet at a first end in a first direction, the protective gas in the protective gas chamber can be discharged from the protective gas outlet, the gas in the gas supply chamber can be discharged from the gas supply outlet, the protective gas outlet and the vacuum inlet are both annular, the protective gas outlet is arranged in an annular shape on the outside of the vacuum inlet, the vacuum inlet is arranged in an annular shape on the outside of the gas supply outlet, the protective gas outlet, the vacuum inlet and the gas supply outlet of the gas supply device are facing one side in the first direction of the thickness direction of the substrate; A vacuum pumping device is connected to the vacuum pumping chamber so as to vacuum the vacuum pumping chamber.

2. The semiconductor vapor deposition equipment according to claim 1, characterized in that: A heating device is included, the heating device is used to heat the substrate.

3. The semiconductor vapor deposition equipment according to claim 2, characterized in that: It includes a vacuum chamber, the vacuum pumping device can evacuate the vacuum chamber, the support part, the gas supply device and the heating device are all located in the vacuum chamber, the heating device is used to heat a local area of ​​the substrate, and the gas supply outlet can spray epitaxial gas or cleaning gas toward the substrate.

4. The semiconductor vapor deposition equipment according to claim 3, characterized in that: The first direction is the up-down direction, and the protective gas outlet, the vacuum inlet and the gas supply outlet of the gas supply device are facing downward; The gas outlet direction of the protective gas outlet is inclined outwardly in the first direction away from the protective gas outlet; The vacuum chamber includes a first vacuum sub-chamber adjacent to the vacuum inlet, and a diameter of the first vacuum sub-chamber increases in a direction adjacent to the vacuum inlet in the first direction.

5. The semiconductor vapor deposition equipment according to claim 4, characterized in that: The angle between the outlet direction of the protective gas outlet and the first direction is greater than or equal to 0° and less than or equal to 45°; The gas supply device includes a protective gas pipeline, a vacuum pipeline and a gas supply pipeline. The protective gas pipeline is arranged on the outside of at least part of the vacuum pipeline, and the protective gas pipeline and the vacuum pipeline define the protective gas cavity and the protective gas outlet. The vacuum pipeline is arranged on the outside of at least part of the gas supply pipe section, and the vacuum pipeline and the gas supply pipeline define the vacuum cavity and the vacuum inlet. The vacuum pipeline includes a first pipe section adjacent to the vacuum inlet, and the inner diameter and the outer diameter of the first pipe section increase in the first direction along the direction adjacent to the vacuum inlet. The protective gas pipeline includes a second pipe section adjacent to the protective gas outlet, and the inner diameter of the second pipe section increases in the first direction along the direction adjacent to the vacuum inlet.

6. The semiconductor vapor deposition equipment according to claim 5, characterized in that: The air supply device comprises a plurality of air supply cavities and a plurality of air supply outlets, each of the air supply cavities is communicated with at least one of the air supply outlets, and each of the air supply cavities cooperates with a control valve; There are multiple air supply pipelines, and each of the air supply pipelines defines an air supply cavity; Alternatively, a plurality of air supply sub-pipelines are provided in the air supply pipeline, and each of the air supply cavities is connected to at least one of the air supply sub-pipelines; Alternatively, a plurality of partitions are provided in the air supply pipeline, and the plurality of partitions and the air supply pipeline define a plurality of the air supply cavities.

7. The semiconductor vapor deposition equipment according to claim 6, characterized in that: The heating device is located below the substrate, and comprises a heating part and a cooling part, wherein the heating part is used to heat the substrate, and the cooling part is used to cool the substrate, and the cooling part is arranged around the outside of the heating part, and the outer contours of the heating part and the cooling part are both circular; or, the outer contours of the heating part and the cooling part are both rectangular; Each of the air supply cavities is communicated with a plurality of the air supply outlets, and the plurality of the air supply outlets of each of the air supply cavities are arranged at intervals.

8. The semiconductor vapor deposition equipment according to claim 6, characterized in that: The gas supply device comprises a carrier gas pipeline, a carrier gas outlet of the carrier gas pipeline faces the substrate in the first direction, the carrier gas outlet is located inside the vacuum inlet, the carrier gas outlet is adjacent to the gas supply outlet, and the heating device is used to heat the carrier gas in the carrier gas pipeline; At least one of the carrier gas outlet and the gas supply outlet is arranged obliquely so that the gases ejected from the carrier gas outlet and the gas supply outlet have a convergence point; The carrier gas outlet and the gas supply outlet discharge gas alternately in sequence; or, the carrier gas outlet and the gas supply outlet discharge gas simultaneously.

9. The semiconductor vapor deposition equipment according to claim 3, characterized in that: The gas supply device and the substrate are relatively movable in a second direction, and the second direction is perpendicular to the first direction; The support portion is located at the lower side of the air supply device, the support portion is connected to the moving portion, and the moving portion can drive the support portion to move in the second direction; The outer diameter of the air supply outlet is greater than or equal to 5 mm and less than or equal to a first preset value; The distance between the protective gas outlet, the vacuum inlet and the gas supply outlet of the gas supply device and the substrate in the first direction is greater than or equal to 1 mm and less than or equal to 10 mm; A vacuum gauge is provided in the vacuum chamber; A temperature measuring device for measuring the temperature of the substrate is provided in the vacuum chamber; A mass spectrometer is arranged in the vacuum chamber and the vacuum chamber.

10. A semiconductor vapor deposition method using the semiconductor vapor deposition device according to any one of claims 3 to 9, characterized in that: The steps include: Using a vacuum pumping device to evacuate the vacuum chamber and the vacuum chamber, using a protective gas outlet to spray protective gas to the substrate so as to form a protective gas wall between the substrate and the protective gas outlet, using a heating device to heat the preset epitaxial position of the substrate, and using a gas supply outlet to spray epitaxial gas to the preset epitaxial position of the substrate so as to epitaxially form a preset material film layer at the preset epitaxial position; Alternatively, a vacuum chamber and a vacuum cavity are evacuated using a vacuum pump, a protective gas is sprayed toward the substrate using a protective gas outlet so as to form a protective gas wall between the substrate and the protective gas outlet, and a cleaning gas is sprayed toward the preset cleaning position of the substrate using a gas supply outlet so as to remove the film layer at the preset cleaning position.

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