Surface color difference detection method and device, electronic equipment and storage medium

Abstract

The invention discloses a surface color difference detection method and device, electronic equipment and a storage medium, and the method and device are applied to the electronic equipment and are used for detecting the surface color difference of a silicon carbide wafer. The surface color difference detection method specifically comprises the following steps: acquiring transmission light of a silicon carbide wafer irradiated by a light source to obtain global morphology data of the silicon carbide wafer; chromatic aberration extraction is carried out on the global morphology data based on a preset background gray value and a gray contrast value, a plurality of chromatic aberration areas are obtained, and the chromatic aberration areas are bright chromatic aberration areas and dark chromatic aberration areas; and determining a chromatic aberration index based on the ratio of the total area of the plurality of chromatic aberration areas to the total area of the silicon carbide wafer to be detected. According to the scheme, manual participation is not needed in the process of obtaining the color difference index, so that the problem of poor accuracy caused by strong subjective factors of visual detection can be solved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and more specifically, to a surface color difference detection method, device, electronic device and storage medium. Background Art

[0002] Silicon carbide is an important advanced semiconductor material with 70 crystal forms, of which β-SiC and α-SiC are the most common. β-SiC has a cubic structure, while α-SiC has a hexagonal structure. In addition, silicon carbide has different orientations, such as 3C-SiC, 4H-SiC, 6H-SiC, etc. These different crystal forms and orientations have an important impact on the physical properties and applications of silicon carbide.

[0003] The mainstream silicon carbide wafer is 4H conductive silicon carbide polishing wafer, which is used in the manufacture of power electronic chips and is a brown-green wafer. Pure silicon carbide is colorless and transparent. However, in industrial production, due to the presence of impure substances such as iron or doping substances, preparation process and other factors, the color of silicon carbide may change. The color difference is extremely subtle and the change trend is gradual, which cannot be judged using local vision.

[0004] At present, the color detection method of silicon carbide wafers is to determine the color difference through visual observation. However, the human eye's perception of color is a complex and subjective process, which involves many factors, including physiological, psychological, cultural and personal experience, resulting in poor accuracy in determining the color difference of the silicon carbide wafer surface. Summary of the invention

[0005] In view of this, the present application provides a surface color difference detection method, device, electronic device and storage medium for detecting the surface color difference of silicon carbide wafers to solve the problem of poor accuracy caused by strong subjective factors in visual detection.

[0006] In order to achieve the above objectives, the proposed solution is as follows:

[0007] A surface color difference detection method is applied to electronic equipment and is used to detect the surface color difference of a silicon carbide wafer. The surface color difference detection method comprises the steps of:

[0008] Collecting transmitted light of the silicon carbide wafer irradiated by a light source to obtain global morphological data of the silicon carbide wafer;

[0009] Performing color difference extraction on the global topography data based on a preset background grayscale value and a grayscale contrast value to obtain a plurality of color difference regions, wherein the color difference regions are a bright color difference region and a dark color difference region;

[0010] A color difference index is determined based on a ratio of a total area of ​​the plurality of color difference regions to a total area of ​​the silicon carbide wafer to be inspected.

[0011] Optionally, the light source is a vertical light source or an oblique light source.

[0012] Optionally, the color difference extraction of the global topography data based on the preset background gray value and gray contrast value to obtain multiple color difference areas includes the steps of:

[0013] Select background gray value and gray contrast value;

[0014] Based on the background gray value, the gray contrast value is used to identify the gray range from the global topography data;

[0015] An area beyond the grayscale range is identified as the color difference area.

[0016] Optionally, the step of selecting the background gray value comprises the following steps:

[0017] When the light source is a vertical light source, the background grayscale value is set to a fixed value, and the grayscale contrast value is set to a fixed value range;

[0018] When the light source is an oblique light source, the average value of multiple grayscale values ​​at a preset distance from the center of the silicon carbide crystal in the global morphology data is selected as the background grayscale value, and the grayscale contrast value is set to a fixed value range.

[0019] Optionally, identifying the area beyond the grayscale range as the color difference area includes:

[0020] Identify a region whose brightness exceeds an upper limit of the grayscale range as the bright color difference region;

[0021] An area whose brightness is lower than a lower limit of the grayscale range is identified as the dark color difference area.

[0022] Optionally, the following steps are also included:

[0023] It is determined whether the silicon carbide wafer has defects based on the color difference index.

[0024] A surface color difference detection device is applied to electronic equipment and is used to detect the surface color difference of a silicon carbide wafer. The surface color difference detection device comprises:

[0025] A data acquisition module is configured to collect transmitted light of the silicon carbide wafer irradiated by the light source to obtain global morphological data of the silicon carbide wafer;

[0026] A color difference extraction module is configured to perform color difference extraction on the global topography data based on a preset background gray value and a gray contrast value to obtain a plurality of color difference regions, wherein the color difference regions are a bright color difference region and a dark color difference region;

[0027] The index determination module is configured to determine the color difference index based on the ratio of the total area of ​​the plurality of color difference regions to the total area of ​​the silicon carbide wafer to be inspected.

[0028] Optionally, also include:

[0029] The defect detection module is configured to determine whether the silicon carbide wafer has defects based on the color difference index.

[0030] An electronic device, comprising at least one processor and a memory connected to the processor, wherein:

[0031] The memory is used to store computer programs or instructions;

[0032] The processor is used to execute the computer program or instruction so that the electronic device implements the surface color difference detection method as described above.

[0033] A storage medium is applied to an electronic device, wherein the storage medium carries one or more computer programs, and the one or more computer programs can be executed by the electronic device, so that the electronic device implements the surface color difference detection method as described above.

[0034] It can be seen from the above technical scheme that the present application discloses a surface color difference detection method, device, electronic device and storage medium, which are applied to electronic devices for detecting the surface color difference of silicon carbide wafers. The surface color difference detection method specifically collects the transmitted light of the silicon carbide wafer irradiated by the light source to obtain the global morphology data of the silicon carbide wafer; based on the preset background gray value and gray contrast value, the global morphology data is subjected to color difference extraction to obtain multiple color difference areas, which are bright color difference areas and dark color difference areas; the color difference index is determined based on the ratio of the total area of ​​the multiple color difference areas to the total area of ​​the silicon carbide wafer to be detected. Since the present scheme does not require manual participation in the process of obtaining the color difference index, it can solve the problem of poor accuracy of visual inspection due to strong subjective factors. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0036] Figure 1 This is a flow chart of a surface color difference detection method according to an embodiment of the present application;

[0037] Figure 2 A schematic diagram of the chromatic aberration morphology of a silicon carbide wafer according to an embodiment of the present application;

[0038] Figure 3 A schematic diagram of the background gray value in an embodiment of the present application;

[0039] Figure 4 A schematic diagram of a background grayscale of an embodiment of the present application;

[0040] Figure 5 A flow chart of another surface color difference detection method according to an embodiment of the present application;

[0041] Figure 6 A block diagram of a surface color difference detection device according to an embodiment of the present application;

[0042] Figure 7 A block diagram of another surface color difference detection device according to an embodiment of the present application;

[0043] Figure 8 A block diagram of an electronic device according to an embodiment of the present application. DETAILED DESCRIPTION

[0044] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0045] Figure 1 This is a flow chart of a surface color difference detection method according to an embodiment of the present application.

[0046] like Figure 1 As shown, the surface color difference detection method provided in this embodiment is applied to an electronic device for detecting the surface color difference of a silicon carbide wafer. The electronic device can be understood as a computer, server or cloud platform with data computing and information processing capabilities. The surface color difference detection method comprises the following steps:

[0047] S1. Obtain global appearance data by collecting the transmitted light of the silicon carbide wafer irradiated by the light source.

[0048] The light source used in the present application is a laser light source. When collecting transmitted light, the laser light source is set on the back of the silicon carbide wafer to be detected and facing the silicon carbide wafer. Then, a 1x industrial camera is used to collect the light transmitted by the silicon carbide wafer. The incident amount and depth of field of the light can be controlled by controlling the aperture of the lens, thereby obtaining the global morphological data of the silicon carbide wafer due to its chromatic aberration morphology. The chromatic aberration morphology is as follows: Figure 2 In practice, the global shape data includes pixel data of pixel points collected by the industrial camera, and the pixel data includes data such as light intensity and color temperature. This application only selects the light intensity data as the data point of the global shape data.

[0049] After the original image is obtained based on the industrial camera, the original image is processed by image algorithm processing technology. The specific processing process includes but is not limited to image enhancement, image smoothing / noise reduction enhancement, image sharpening, etc. Grayscale transformation enhancement is preferred for image enhancement; neighborhood averaging method or median filtering method is preferred for image smoothing / noise reduction enhancement; echelon sharpening method is preferred for image sharpening, so as to highlight the edges and subtle details of the original image.

[0050] It can be seen from the above description that the global topography data is actually a data set including a large number of data points, and each pixel point in the data set includes the position parameters and light intensity data of a certain point of the silicon carbide wafer.

[0051] The angle of the above-mentioned laser light source can be determined according to the specific scenario. For example, when a 15-watt white light source is selected, the present application configures the laser light source as a vertical light source, that is, its direction is perpendicular to the plane of the silicon carbide wafer and is 10 cm away from the silicon carbide wafer; when a 25-watt white light source is selected, the present application configures the laser light source as an oblique light source, that is, its direction is no longer perpendicular to the plane of the silicon carbide wafer, but is at an angle of 5°, and is 7 cm away from the silicon carbide wafer.

[0052] S2. Perform color difference extraction on the global morphology data based on the preset background grayscale value and grayscale contrast value.

[0053] By color difference extraction, multiple color difference regions of the silicon carbide wafer to be tested are obtained. Of course, if the quality of the silicon carbide wafer is good enough, the color difference region may not be found. In view of the many uncontrollable factors in industrial production, the probability of no color difference region is too small, so it will not be repeated here. Specifically, the color difference region is extracted through the following steps:

[0054] First, select the above-mentioned background grayscale value and grayscale contrast value.

[0055] For a 15-watt white light source, the background grayscale value is 125; the grayscale contrast value is set to a fixed value, such as -30~+30, and black is defined as 0 and pure white as 255;

[0056] For a 25-watt white light source, multiple grayscale values ​​are uniformly taken at 1 cm around the center of the silicon carbide wafer, such as Figure 3 If the difference between multiple grayscale values ​​does not exceed 10, the average value of the multiple grayscale values ​​is set as the background grayscale value; the grayscale contrast value is set to -25~+25, such as Figure 4 shown.

[0057] Then, the global morphology data is matched and processed using a pre-selected or trained AI algorithm, and data points in the global morphology data that exceed the grayscale range centered on the background grayscale value and bounded by the grayscale contrast value are extracted. For the extracted data points, multiple adjacent data points constitute a color difference area, or the outermost data points of the adjacent data points that exceed the grayscale range constitute the corresponding boundary line, and the range surrounded by the boundary line constitutes the color difference area. For the color difference area, the color difference area composed of all data points that exceed the upper limit of the grayscale range is described as a bright color difference area, and conversely, the color difference area composed of data points below the lower limit of the grayscale range is described as a dark color difference area.

[0058] S3. Determine a color difference index based on a surface proportion of the silicon carbide wafer by multiple color difference regions.

[0059] After obtaining multiple color difference regions, the areas of all color difference regions are summed to obtain the total area of ​​the color difference regions; then the ratio between the total area of ​​the color difference regions and the total area of ​​the silicon carbide wafer is calculated, and the color difference index can be determined based on the ratio and a preset index ratio.

[0060] It can be seen from the above technical scheme that this embodiment provides a surface color difference detection method, which is applied to electronic equipment and is used to detect the surface color difference of silicon carbide wafers. The surface color difference detection method specifically collects the transmitted light of the silicon carbide wafer irradiated by the light source to obtain the global morphology data of the silicon carbide wafer; based on the preset background gray value and gray contrast value, the global morphology data is subjected to color difference extraction to obtain multiple color difference areas, and the color difference areas are bright color difference areas and dark color difference areas; the color difference index is determined based on the ratio of the total area of ​​the multiple color difference areas to the total area of ​​the silicon carbide wafer to be detected. Since this scheme does not require manual participation in the process of obtaining the color difference index, it can solve the problem of poor accuracy caused by strong subjective factors in visual inspection.

[0061] In addition, in a specific implementation of the present application, the following steps are also included: Figure 5 shown.

[0062] S4. Determine whether the silicon carbide wafer has defects based on the color difference index.

[0063] After obtaining the color difference index, the color difference index can be judged based on a preset index threshold, and whether the silicon carbide wafer has defects can be determined based on the judgment result. By determining whether there are defects, the user can take disposal measures based on the result.

[0064] The flow chart and block diagram in the accompanying drawings illustrate the possible architecture, function and operation of the system, method and computer program product according to various embodiments of the present disclosure. In this regard, each square box in the flow chart or block diagram can represent a module, a program segment or a part of a code, and the module, the program segment or a part of the code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some implementations as replacements, the functions marked in the square box can also occur in a sequence different from that marked in the accompanying drawings. For example, two square boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each square box in the block diagram and / or flow chart, and the combination of the square boxes in the block diagram and / or flow chart can be implemented with a dedicated hardware-based system that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0065] Although operations are depicted in a particular order, this should not be understood as requiring that the operations be performed in the particular order shown or in a sequential order.Multitasking and parallel processing may be advantageous under certain circumstances.

[0066] It should be understood that the various steps described in the method embodiments of the present disclosure may be performed in different orders and / or in parallel. In addition, the method embodiments may include additional steps and / or omit the steps shown. The scope of the present disclosure is not limited in this respect.

[0067] Computer program code for performing the operations of the present disclosure may be written in one or more programming languages ​​or a combination thereof, including, but not limited to, object-oriented programming languages, such as Java, Smalltalk, C++, and conventional procedural programming languages, such as C or similar programming languages. The program code may be executed entirely on the user's computer, partially on the user's computer, as a separate software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In cases involving a remote computer, the remote computer may be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer.

[0068] Figure 6 This is a block diagram of a surface color difference detection device according to an embodiment of the present application.

[0069] like Figure 6 As shown, the surface color difference detection device provided in this embodiment is applied to an electronic device for detecting the surface color difference of a silicon carbide wafer. The electronic device can be understood as a computer, server or cloud platform with data computing and information processing capabilities. The surface color difference detection device includes a data acquisition module 10, a color difference extraction module 20 and an index determination module 30.

[0070] The data acquisition module is used to obtain global appearance data by collecting the transmitted light of the silicon carbide wafer irradiated by the light source.

[0071] The light source used in the present application is a laser light source. When collecting transmitted light, the laser light source is set on the back of the silicon carbide wafer to be detected and facing the silicon carbide wafer. Then, a 1x industrial camera is used to collect the light transmitted by the silicon carbide wafer. The incident amount and depth of field of the light can be controlled by controlling the aperture of the lens, thereby obtaining the global morphological data of the silicon carbide wafer due to its chromatic aberration morphology. The chromatic aberration morphology is as follows: Figure 2 In practice, the global shape data includes pixel data of pixel points collected by the industrial camera, and the pixel data includes data such as light intensity and color temperature. This application only selects the light intensity data as the data point of the global shape data.

[0072] It can be seen from the above description that the global topography data is actually a data set including a large number of data points, and each pixel point in the data set includes the position parameters and light intensity data of a certain point of the silicon carbide wafer.

[0073] The angle of the above-mentioned laser light source can be determined according to the specific scenario. For example, when a 15-watt white light source is selected, the present application configures the laser light source as a vertical light source, that is, its direction is perpendicular to the plane of the silicon carbide wafer and is 10 cm away from the silicon carbide wafer; when a 25-watt white light source is selected, the present application configures the laser light source as an oblique light source, that is, its direction is no longer perpendicular to the plane of the silicon carbide wafer, but is at an angle of 5°, and is 7 cm away from the silicon carbide wafer.

[0074] The color difference extraction module is used to extract color difference from global morphology data based on preset background grayscale value and grayscale contrast value.

[0075] By color difference extraction, multiple color difference regions of the silicon carbide wafer to be tested are obtained. Of course, if the quality of the silicon carbide wafer is good enough, the color difference region may not be found. In view of the many uncontrollable factors in industrial production, the probability of no color difference region is too small, so it will not be repeated here. Specifically, the color difference region is extracted through the following steps:

[0076] First, select the above-mentioned background grayscale value and grayscale contrast value.

[0077] For a 15-watt white light source, the background grayscale value is 125; the grayscale contrast value is set to a fixed value, such as -30~+30, and black is defined as 0 and pure white as 255;

[0078] For a 25-watt white light source, multiple grayscale values ​​are uniformly taken at 1 cm around the center of the silicon carbide wafer, such as Figure 3 If the difference between multiple gray values ​​does not exceed 10, the average value of the multiple gray values ​​is set as the background gray value; the gray contrast value is set to -25~+25.

[0079] Then, the global morphology data is matched and processed using a pre-selected or trained AI algorithm, and data points in the global morphology data that exceed the grayscale range centered on the background grayscale value and bounded by the grayscale contrast value are extracted. For the extracted data points, multiple adjacent data points constitute a color difference area, or the outermost data points of the adjacent data points that exceed the grayscale range constitute the corresponding boundary line, and the range surrounded by the boundary line constitutes the color difference area. For the color difference area, the color difference area composed of all data points that exceed the upper limit of the grayscale range is described as a bright color difference area, and conversely, the color difference area composed of data points below the lower limit of the grayscale range is described as a dark color difference area.

[0080] The index determination module is used to determine the color difference index based on the surface proportion of multiple color difference areas to the silicon carbide wafer.

[0081] After obtaining multiple color difference regions, the areas of all color difference regions are summed to obtain the total area of ​​the color difference regions; then the ratio between the total area of ​​the color difference regions and the total area of ​​the silicon carbide wafer is calculated, and the color difference index can be determined based on the ratio and a preset index ratio.

[0082] It can be seen from the above technical scheme that this embodiment provides a surface color difference detection device, which is applied to electronic equipment and is used to detect the surface color difference of silicon carbide wafers. The surface color difference detection method specifically collects the transmitted light of the silicon carbide wafer irradiated by the light source to obtain the global morphology data of the silicon carbide wafer; based on the preset background gray value and gray contrast value, the global morphology data is subjected to color difference extraction to obtain multiple color difference areas, and the color difference areas are bright color difference areas and dark color difference areas; the color difference index is determined based on the ratio of the total area of ​​the multiple color difference areas to the total area of ​​the silicon carbide wafer to be detected. Since this scheme does not require manual participation in the process of obtaining the color difference index, it can solve the problem of poor accuracy caused by strong subjective factors in visual inspection.

[0083] In addition, in a specific embodiment of the present application, a defect detection module 40 is also included, such as Figure 7 shown.

[0084] The defect detection module is used to determine whether the silicon carbide wafer has defects based on the color difference index.

[0085] After obtaining the color difference index, the color difference index can be judged based on a preset index threshold, and whether the silicon carbide wafer has defects can be determined based on the judgment result. By determining whether there are defects, the user can take disposal measures based on the result.

[0086] The units involved in the embodiments described in the present disclosure may be implemented by software or hardware. The name of a unit does not limit the unit itself in some cases. For example, the first acquisition unit may also be described as a "unit for acquiring at least two Internet Protocol addresses".

[0087] The functions described above herein may be performed at least in part by one or more hardware logic components. For example, without limitation, exemplary types of hardware logic components that may be used include: field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), application specific standard products (ASSPs), systems on chips (SOCs), complex programmable logic devices (CPLDs), and the like.

[0088] Figure 8 A block diagram of an electronic device according to an embodiment of the present application.

[0089] Reference below Figure 8, which shows a schematic diagram of the structure of an electronic device suitable for implementing the embodiments of the present disclosure. The terminal device in the embodiments of the present disclosure may include, but is not limited to, mobile terminals such as mobile phones, laptop computers, digital broadcast receivers, PDAs (personal digital assistants), PADs (tablet computers), PMPs (portable multimedia players), vehicle-mounted terminals (such as vehicle-mounted navigation terminals), etc., and fixed terminals such as digital TVs, desktop computers, etc. The electronic device is only an example and should not bring any limitation to the functions and scope of use of the embodiments of the present disclosure.

[0090] The electronic device may include a processing device (e.g., a central processing unit, a graphics processing unit, etc.) 701, which can perform various appropriate actions and processes according to a program stored in a read-only memory ROM 702 or a program loaded from an input device 706 into a random access memory RAM 703. In the RAM, various programs and data required for the operation of the electronic device are also stored. The processing device, ROM, and RAM are connected to each other via a bus 704. An input / output (I / O) interface 705 is also connected to the bus 704.

[0091] Typically, the following devices may be connected to the I / O interface: input devices including, for example, a touch screen, a touchpad, a keyboard, a mouse, a camera, a microphone, an accelerometer, a gyroscope, etc.; output devices 707 including, for example, a liquid crystal display (LCD), a speaker, a vibrator, etc.; storage devices 708 including, for example, a magnetic tape, a hard disk, etc.; and communication devices 709. The communication device 709 may allow the electronic device to communicate with other devices wirelessly or by wire to exchange data. Although the figure shows an electronic device with various devices, it should be understood that it is not required to implement or have all the devices shown. More or fewer devices may be implemented or have alternatively.

[0092] The present application provides a computer-readable storage medium embodiment.

[0093] The computer-readable storage medium is applied to an electronic device and carries one or more computer programs. When the one or more computer programs are executed by the electronic device, the electronic device collects the transmitted light of the silicon carbide wafer irradiated by the light source to obtain the global morphology data of the silicon carbide wafer; performs color difference extraction on the global morphology data based on the preset background gray value and gray contrast value to obtain multiple color difference areas, which are bright color difference areas and dark color difference areas; and determines the color difference index based on the ratio of the total area of ​​the multiple color difference areas to the total area of ​​the silicon carbide wafer to be detected. Since this solution does not require manual participation in the process of obtaining the color difference index, it can solve the problem of poor accuracy caused by strong subjective factors in visual inspection.

[0094] It should be noted that the computer-readable medium disclosed above may be a computer-readable signal medium or a computer-readable storage medium or any combination of the above two. The computer-readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device or device, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above.

[0095] In the present disclosure, a computer-readable storage medium may be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, apparatus, or device. In the present disclosure, a computer-readable signal medium may include a data signal propagated in a baseband or as part of a carrier wave, which carries a computer-readable program code. Such propagated data signals may take a variety of forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination of the above. A computer-readable signal medium may also be any computer-readable medium other than a computer-readable storage medium, which may send, propagate, or transmit a program for use by or in combination with an instruction execution system, apparatus, or device. The program code contained on the computer-readable medium may be transmitted using any suitable medium, including but not limited to: wires, optical cables, RF (radio frequency), etc., or any suitable combination of the above.

[0096] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0097] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present invention.

[0098] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or terminal device including the elements.

[0099] The technical solution provided by the present invention is introduced in detail above. Specific examples are used in this article to illustrate the principle and implementation mode of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation mode and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A surface color difference detection method, applied to electronic equipment, for detecting the surface color difference of a silicon carbide wafer, characterized in that: The surface color difference detection method comprises the steps of: Collecting transmitted light of the silicon carbide wafer irradiated by a light source to obtain global morphological data of the silicon carbide wafer; Performing color difference extraction on the global topography data based on a preset background grayscale value and a grayscale contrast value to obtain a plurality of color difference regions, wherein the color difference regions are a bright color difference region and a dark color difference region; A color difference index is determined based on a ratio of a total area of ​​the plurality of color difference regions to a total area of ​​the silicon carbide wafer to be inspected.

2. The surface color difference detection method according to claim 1, characterized in that: The light source is a vertical light source or an oblique light source.

3. The surface color difference detection method according to claim 1, characterized in that: The method of performing color difference extraction on the global morphology data based on the preset background grayscale value and grayscale contrast value to obtain multiple color difference regions comprises the steps of: Select background gray value and gray contrast value; Based on the background gray value, the gray contrast value is used to identify the gray range from the global topography data; An area beyond the grayscale range is identified as the color difference area.

4. The surface color difference detection method according to claim 3, characterized in that: The step of selecting the background gray value comprises the following steps: When the light source is a vertical light source, the background grayscale value is set to a fixed value, and the grayscale contrast value is set to a fixed value range; When the light source is an oblique light source, the average value of multiple grayscale values ​​at a preset distance from the center of the silicon carbide crystal in the global morphology data is selected as the background grayscale value, and the grayscale contrast value is set to a fixed value range.

5. The surface color difference detection method according to claim 3, characterized in that: The step of identifying the area beyond the grayscale range as the color difference area comprises: Identify a region whose brightness exceeds an upper limit of the grayscale range as the bright color difference region; An area whose brightness is lower than a lower limit of the grayscale range is identified as the dark color difference area.

6. The surface color difference detection method according to any one of claims 1 to 5, characterized in that: Also includes the steps: It is determined whether the silicon carbide wafer has defects based on the color difference index.

7. A surface color difference detection device, applied to electronic equipment, for detecting the surface color difference of a silicon carbide wafer, characterized in that: The surface color difference detection device comprises: A data acquisition module is configured to collect transmitted light of the silicon carbide wafer irradiated by the light source to obtain global morphological data of the silicon carbide wafer; A color difference extraction module is configured to perform color difference extraction on the global topography data based on a preset background gray value and a gray contrast value to obtain a plurality of color difference regions, wherein the color difference regions are a bright color difference region and a dark color difference region; The index determination module is configured to determine the color difference index based on the ratio of the total area of ​​the plurality of color difference regions to the total area of ​​the silicon carbide wafer to be inspected.

8. The surface color difference detection device according to claim 7, characterized in that: Also includes: The defect detection module is configured to determine whether the silicon carbide wafer has defects based on the color difference index.

9. An electronic device, characterized in that: The electronic device comprises at least one processor and a memory connected to the processor, wherein: The memory is used to store computer programs or instructions; The processor is used to execute the computer program or instruction so that the electronic device implements the surface color difference detection method according to any one of claims 1 to 6.

10. A storage medium, applied to an electronic device, characterized in that: The storage medium carries one or more computer programs, and the one or more computer programs can be executed by the electronic device, so that the electronic device implements the surface color difference detection method according to any one of claims 1 to 6.

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