Substrate processing apparatus and substrate processing method

Abstract

The present invention provides a technique capable of suppressing the occurrence of liquid splashing during a cleaning process using a mixed fluid. The substrate processing apparatus includes: a rotation holding unit that holds a substrate so that the substrate can rotate, and releases a mixed fluid of a cleaning liquid and a gas onto the substrate; a liquid supply nozzle capable of integrally moving with the cleaning nozzle above the substrate; and a control unit for controlling each unit. The cleaning nozzles can independently release cleaning liquid and gas. The control unit performs: a first process in which a liquid film of a liquid is formed on a substrate; a second process of releasing the cleaning liquid from the cleaning nozzle to the center of the substrate on the substrate on which the liquid film of the liquid is formed; a third process of releasing the mixed fluid to the central portion of the substrate by releasing the first flow rate of gas from the cleaning nozzle to the substrate; and a fourth process of changing the flow rate of the gas to a second flow rate greater than the first flow rate and moving the cleaning nozzle for releasing the mixed fluid and the liquid supply nozzle for releasing the liquid from above the central portion of the substrate to above the peripheral portion.

Description

Technical Field

[0001] Embodiments of the present invention relate to a substrate processing apparatus and a substrate processing method. Background Art

[0002] In the manufacturing process of semiconductor devices, there is known a technique for cleaning a substrate such as a semiconductor wafer by releasing a mixed fluid of a cleaning liquid and a gas to remove a removal object such as a resist film from the substrate (see Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2003-203892 Summary of the invention

[0006] The technical problem that the invention is intended to solve

[0007] The present invention provides a technology capable of suppressing splashing of liquid on a substrate when a mixed fluid is used for cleaning.

[0008] Technical solutions for solving technical problems

[0009] A substrate processing device of one embodiment of the present invention includes a rotating holding unit, a cleaning nozzle, a liquid supply nozzle and a control unit. The rotating holding unit holds the substrate in a manner that the substrate can rotate. The cleaning nozzle is configured to be able to move from the central portion of the substrate to the peripheral portion above the substrate held and rotated by the rotating holding unit, and release a mixed fluid of cleaning liquid and gas onto the substrate. The liquid supply nozzle is configured to be able to move integrally with the cleaning nozzle above the substrate, and release liquid onto the substrate. The control unit controls each unit. The cleaning nozzle can release the cleaning liquid and the gas independently. The control unit performs a first process, a second process, a third process and a fourth process. In the first process, the liquid is released from the liquid supply nozzle to the central portion of the substrate, and a liquid film of the liquid is formed on the substrate. In the second process, the cleaning liquid is released from the cleaning nozzle to the central portion of the substrate on the substrate on which the liquid film of the liquid is formed. In the third process, the gas is released from the cleaning nozzle onto the substrate at a first flow rate, thereby releasing the mixed fluid onto the central portion of the substrate. In the fourth process, the flow rate of the gas released from the cleaning nozzle is changed to a second flow rate greater than the first flow rate, and the cleaning nozzle that releases the mixed fluid and the liquid supply nozzle that releases the liquid are moved from above the central portion of the substrate to above the peripheral portion.

[0010] Effects of the Invention

[0011] According to the present invention, it is possible to suppress the occurrence of splashing on a substrate during a cleaning process using a mixed fluid. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic diagram showing an example of a specific structure of a substrate processing apparatus according to an embodiment.

[0013] Figure 2 It is a figure for demonstrating the cleaning process of embodiment.

[0014] Figure 3 It is a figure for demonstrating the cleaning process of embodiment.

[0015] Figure 4 It is a figure for demonstrating the cleaning process of embodiment.

[0016] Figure 5 It is a figure for demonstrating the cleaning process of embodiment.

[0017] Figure 6 It is a figure for demonstrating the cleaning process of embodiment.

[0018] Figure 7 It is a figure for demonstrating the cleaning process of embodiment.

[0019] Figure 8 It is a figure for demonstrating the cleaning process of embodiment.

[0020] Fig. 9 It is a figure for demonstrating the cleaning process of embodiment.

[0021] Fig.10 It is a figure for demonstrating the cleaning process of embodiment.

[0022] Fig.11 It is a figure for demonstrating the cleaning process of embodiment.

[0023] Fig.12 This is a diagram showing an example of the transition of the flow rate of the processing gas released from the cleaning nozzle in the cleaning process of the reference example.

[0024] Fig.13 This is a diagram showing an example of transition of the flow rate of the processing gas released from the cleaning nozzle in the cleaning process according to the embodiment.

[0025] Fig.14 It is a diagram for explaining the rinsing process according to the embodiment.

[0026] Fig.15 It is a diagram for explaining the rinsing process according to the embodiment.

[0027] Fig.16It is a diagram for explaining the rinsing process according to the embodiment.

[0028] Fig.17 It is a diagram for explaining the rinsing process according to the embodiment.

[0029] Fig.18 It is a diagram for explaining the rinsing process according to the embodiment.

[0030] Fig.19 This is a flowchart showing an example of a procedure of substrate processing executed by the substrate processing apparatus according to the embodiment.

[0031] Fig. 20 This is a flowchart showing an example of the steps of the cleaning process performed by the substrate processing apparatus according to the embodiment.

[0032] Fig.21 This is a flowchart showing an example of the steps of the rinsing process performed by the substrate processing apparatus according to the embodiment.

[0033] Fig. 22 This is a flowchart showing another example of the steps of the cleaning process performed by the substrate processing apparatus according to the embodiment.

[0034] Description of Reference Numerals

[0035] W Wafer (an example of a substrate)

[0036] Wa center (an example of the central part)

[0037] 1. Substrate processing device

[0038] 30 Rotation holding part

[0039] 42b Liquid supply nozzle

[0040] 42c Cleaning nozzle

[0041] 53 Back Nozzle

[0042] F21 Flow rate (an example of the first flow rate)

[0043] F22 Flow rate (an example of the second flow rate)

[0044] F23 flow rate (an example of the third flow rate)

[0045] M mixed fluid. DETAILED DESCRIPTION

[0046] Hereinafter, embodiments of the substrate processing apparatus and substrate processing method disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, the present invention is not limited to the embodiments shown below. In addition, the accompanying drawings are schematic, and the relationship between the dimensions of the elements, the ratio of the elements, etc. are sometimes different from the actual. Moreover, between the drawings, there are sometimes parts with different relationship and ratio of the dimensions.

[0047] In the manufacturing process of semiconductor devices, there is known a technique for cleaning a substrate such as a semiconductor wafer by releasing a mixed fluid of a cleaning liquid and a gas to remove a removal object such as a resist film from the substrate.

[0048] In this cleaning process, for example, liquid is supplied from a liquid supply nozzle arranged adjacent to a two-fluid nozzle that discharges a mixed fluid, and cleaning is performed using the mixed fluid while forming a liquid film on the front surface of the substrate.

[0049] Yet, in the above-mentioned prior art, when releasing the mixed fluid from the two-fluid nozzle to the liquid film on the substrate, a large amount of liquid splashes are sometimes produced on the substrate. And, each nozzle may be contaminated by the large amount of liquid splashes, and a large amount of particles may be produced on the substrate.

[0050] Therefore, it is expected to realize a technology that can overcome the above-mentioned problem and suppress the splashing of liquid on the substrate when the cleaning process is performed using a mixed fluid.

[0051] <Structure of substrate processing apparatus>

[0052] First, refer to Figure 1 The structure of the substrate processing apparatus 1 according to the embodiment will be described. Figure 1 1 is a schematic diagram showing an example of a specific structure of the substrate processing apparatus 1 , and is a schematic cross-sectional view when the substrate processing apparatus 1 is viewed from the side.

[0053] like Figure 1 As shown, the substrate processing apparatus 1 includes a processing chamber 20 , a rotation holding portion 30 , an upper supply portion 40 , a lower supply portion 50 , a cup 60 , and a mist shield (anti-mist member) 70 .

[0054] In addition, the substrate processing apparatus 1 includes a control device 2. The control device 2 is, for example, a computer, and includes a control unit 3 and a storage unit 4. The storage unit 4 stores a program for controlling various processes performed in the substrate processing apparatus 1. The control unit 3 controls the operation of the substrate processing apparatus 1 by reading and executing the program stored in the storage unit 4.

[0055] In addition, the program may be recorded in a computer-readable storage medium and installed from the storage medium into the storage unit 4 of the control device 2. Examples of the computer-readable storage medium include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0056] The processing chamber 20 is configured to process the wafer W using a processing fluid therein. The processing chamber 20 accommodates the spin holding unit 30 , the upper supply unit 40 , the lower supply unit 50 , the cup 60 , and the mist guard 70 .

[0057] like Figure 1 As shown, FFU (Fan Filter Unit) 21 is installed so as to cover an opening 20a formed in a ceiling wall of the processing chamber 20. The FFU 21 forms a downward flow in the processing chamber 20.

[0058] An unillustrated inlet and outlet is formed in the substrate processing apparatus 1. The wafer W is transported to the inside of the processing chamber 20 by a substrate transport device (not shown) through the inlet and outlet, and is also transported from the processing chamber 20 to the outside through the inlet and outlet. In addition, a gate (not shown) is provided at the inlet and outlet at a position to close the inlet and outlet, so that the inlet and outlet can be opened and closed.

[0059] like Figure 1 As shown, the rotation holding unit 30 includes a rotation shaft 31, a driving unit 32, a substrate holding unit 33, and a plurality of support pins 34. The rotation shaft 31 is a hollow tubular member extending in the vertical direction. The rotation shaft 31 is configured to be rotatable around a central axis Ax.

[0060] The driving unit 32 is connected to the rotating shaft 31. The driving unit 32 operates based on a signal from the control unit 3 to rotate the rotating shaft 31. The driving unit 32 may be a power source such as an electric motor, for example.

[0061] The substrate holding portion 33 holds the wafer W horizontally. The substrate holding portion 33 is, for example, a flat plate in an annular shape, extending in the horizontal direction. That is, a through hole 33a is formed in the central portion of the substrate holding portion 33. The inner circumference of the substrate holding portion 33 is connected to the front end portion of the rotating shaft 31. Therefore, the substrate holding portion 33 can rotate around the central axis Ax of the rotating shaft 31 as the rotating shaft 31 rotates.

[0062] The plurality of support pins 34 are provided so as to protrude upward from the upper surface 33b of the substrate holding portion 33. The plurality of support pins 34 support the wafer W substantially horizontally by having their top ends abut against the back surface of the wafer W. The support pins 34 may be cylindrical or truncated cone-shaped, for example.

[0063] The plurality of support pins 34 may be arranged at substantially equal intervals near the outer periphery of the substrate holding portion 33 so as to form a circle as a whole when viewed from above. For example, when there are 12 support pins 34, the plurality of support pins 34 may be arranged at intervals of approximately 30°.

[0064] The upper supply unit 40 supplies the processing fluid from the upper side of the wafer W to the front side of the wafer W. The upper supply unit 40 includes supply units 41a to 41e, a nozzle 42a, a liquid supply nozzle 42b, a cleaning nozzle 42c, arms 43a and 43b, and driving units 44a and 44b.

[0065] The supply unit 41a includes a liquid source, a valve, a pump, a heater, etc. (not shown), and supplies various processing liquids from the nozzle 42a toward the bottom based on a signal from the control unit 3. The processing liquid supplied from the supply unit 41a is, for example, SPM (a mixture of sulfuric acid, hydrogen peroxide, and water), etc., and has a temperature higher than room temperature (for example, about 120°C).

[0066] The supply unit 41 b includes a liquid source, a valve, a pump, a heater, etc. (not shown), and supplies the processing liquid for cleaning downward from the liquid supply nozzle 42 b based on a signal from the control unit 3 .

[0067] The cleaning liquid supplied from the supply unit 41b is an example of a liquid, such as SC1 (a mixed liquid of ammonia, hydrogen peroxide, and water). The cleaning liquid supplied from the supply unit 41b has a temperature higher than room temperature (eg, 40°C to 70°C).

[0068] The supply unit 41c includes a liquid source, a valve, a pump, etc. (not shown), and supplies the rinse liquid downward from the liquid supply nozzle 42b based on a signal from the control unit 3. The rinse liquid supplied from the supply unit 41c is, for example, DIW (deionized water). The rinse liquid supplied from the supply unit 41c is, for example, room temperature.

[0069] The supply unit 41 d includes a liquid source, a valve, a pump, a heater, and the like (not shown), and supplies the processing liquid for cleaning from the cleaning nozzle 42 c toward the bottom based on a signal from the control unit 3 .

[0070] The cleaning liquid supplied from the supply unit 41d is an example of the cleaning liquid, such as SC1, etc. The cleaning liquid supplied from the supply unit 41d has a temperature higher than room temperature (eg, 40°C to 70°C), for example.

[0071] The supply unit 41e includes a gas source, valve, pump, etc. (not shown), and supplies various processing gases downward from the cleaning nozzle 42c based on a signal from the control unit 3. The processing gas supplied from the supply unit 41e is an example of a gas, such as an inert gas such as nitrogen.

[0072] The nozzle 42a is, for example, a strip-shaped nozzle and is mounted on the arm 43a. The arm 43a is located in the space above the rotating holding unit 30. The driving unit 44a moves the arm 43a up and down based on a signal from the control unit 3 and rotates the arm 43a in the horizontal direction above the rotating holding unit 30.

[0073] The liquid supply nozzle 42b and the cleaning nozzle 42c are attached to the arm 43b and can move integrally with each other. In addition, the liquid supply nozzle 42b and the cleaning nozzle 42c are located at positions separated from each other by a predetermined distance (for example, 40 mm).

[0074] As described above, in the embodiment, the liquid supply nozzle 42b and the cleaning nozzle 42c are mounted on the same arm 43b and can move integrally with each other. Therefore, since only one driving system is used, the cost of the substrate processing apparatus 1 can be reduced.

[0075] The cleaning nozzle 42c is, for example, a two-fluid nozzle, which mixes the SC1 supplied from the supply unit 41d with the processing gas supplied from the supply unit 41e, and then releases the mixed processing fluid (hereinafter also referred to as the mixed fluid M (refer to Figure 7 )) is released toward the front side of the wafer W.

[0076] like Figure 1 As shown, the arm 43b is located in the space above the rotating holding part 30. The driving part 44b moves the arm 43b up and down based on the signal from the control part 3, and rotates the arm 43b in the horizontal direction above the rotating holding part 30.

[0077] The lower supply unit 50 supplies the processing fluid from the lower side of the wafer W to the lower surface of the wafer W. The lower supply unit 50 includes supply units 51 a , 51 b , and 52 and a back surface nozzle 53 .

[0078] The supply unit 51 a includes a liquid source, a valve, a pump, a heater, etc. (not shown), and supplies various cleaning processing liquids upward from the first flow path 53 a of the back nozzle 53 based on a signal from the control unit 3 .

[0079] The cleaning liquid supplied from the supply unit 51a is an example of other liquids, such as SC1, etc. The cleaning liquid supplied from the supply unit 51a has a temperature higher than room temperature (eg, 40°C to 70°C), for example.

[0080] The supply unit 51 b includes a liquid source, a valve, a pump, a heater, etc. (not shown), and supplies various rinse liquids upward from the first flow path 53 a of the back nozzle 53 based on a signal from the control unit 3 .

[0081] The rinse liquid supplied from the supply unit 51b is, for example, DIW, etc. The rinse liquid supplied from the supply unit 51b is, for example, at room temperature or a temperature higher than room temperature (for example, 40°C to 70°C).

[0082] The supply unit 52 includes a gas source, valve, pump, etc. (not shown), and supplies various processing gases upward from the second flow path 53b of the back nozzle 53 based on a signal from the control unit 3. The processing gas supplied from the supply unit 52 is, for example, an inert gas such as nitrogen.

[0083] The cup body 60 is arranged to surround the substrate holding portion 33 from the outside, and collects the processing fluid scattered from the wafer W held by the substrate holding portion 33. The cup body 60 includes, for example, an inner cup 61, a drain cup 62, and an exhaust cup 63.

[0084] The inner cup 61 is, for example, annular and is arranged to surround from the outside the wafer W supported by the plurality of support pins 34. The inner cup 61 is supported, for example, by the upper surface 33b of the substrate holding portion 33. Therefore, the inner cup 61 rotates around the central axis Ax of the rotation shaft 31 as the rotation shaft 31 rotates.

[0085] In addition, there is a gap between the inner cup 61 and the substrate holding portion 33, so the processing fluid supplied to the wafer W flows out to the outside of the inner cup 61 and the substrate holding portion 33 through the gap. In addition, the inner cup 61 is not limited to the case where it is configured to be rotatable together with the substrate holding portion 33, and can also be fixed to the processing chamber 20.

[0086] The drain cup 62 is located at a position surrounding the inner cup 61 from the outside. The drain cup 62 forms a cylindrical space connected to the gap between the inner cup 61 and the substrate holding portion 33, and recovers the processing liquid flowing out of the gap. A pipe for draining the recovered processing liquid to the drain portion DR located outside the substrate processing apparatus 1 is connected to the lower end of the drain cup 62.

[0087] The exhaust cup 63 is located at a position surrounding the drain cup 62 from the outside. The exhaust cup 63 forms a cylindrical space between the exhaust cup 63 and the drain cup 62, and the space is adjusted to a negative pressure. A pipe is connected to the lower end of the exhaust cup 63, and the pipe is used to suck the atmosphere near the inner cup 61 and exhaust it to the exhaust part EXH located outside the substrate processing device 1.

[0088] The mist guard 70 is located so as to surround the cup body 60 from the outside. That is, the substrate holding portion 33 and the cup body 60 are located inside the mist guard 70. The mist guard 70 has a cylindrical portion 71 and a protruding portion 72, for example.

[0089] The cylindrical portion 71 is, for example, cylindrical and extends in the vertical direction. The extending portion 72 is, for example, annular and extends in the horizontal direction from the upper end of the cylindrical portion 71 toward the radial inner side (ie, the cup body 60 side).

[0090] The mist shield 70 can be raised and lowered by, for example, a lifting mechanism (not shown). Furthermore, the control unit 3 can prevent the mist of the processing liquid scattered from the rotating wafer W from reaching the inner wall of the processing chamber 20 by arranging the mist shield 70 at a high position.

[0091] <Details of Cleaning and Rinsing>

[0092] Next, refer to Figures 2 to 18 The details of the cleaning process and the rinsing process of the substrate processing apparatus 1 according to the embodiment will be described. Figure 2 to Figure 11 It is a figure for demonstrating the cleaning process of embodiment.

[0093] In addition, before the cleaning process and the rinse process described later, in the substrate processing apparatus 1, the control unit 3 (see Figure 1 ) For example, a holding process, a substrate process, and a rinsing process are performed.

[0094] In the holding process, the control unit 3 uses the rotation holding unit 30 (see Figure 1 ) is held by the substrate transport device and transported to the processing chamber 20 through the delivery port (refer to Figure 1 ) of the internal wafer W (refer to Figure 1 During the substrate processing, the control unit 3 emits a nozzle 42a (see Figure 1 ) releases high-temperature SPM to the front surface of the chip W, thereby liquid processing the entire front surface of the chip W.

[0095] In the flushing process, the control unit 3 supplies liquid from the liquid supply nozzle 42b (see Figure 1 ) and the back nozzle 53 (refer to Figure 1 ) releases DIW as a rinse liquid to the front and back of the wafer W, thereby performing a rinse process on the wafer W. For example, the state of the surroundings of the wafer W after the process is completed is Figure 2 Status shown.

[0096] In the cleaning process of the substrate processing apparatus 1 of the embodiment, first, Figure 2 As shown, the control unit 3 (refer to Figure 1 ) operates the upper supply unit 40 to move the liquid supply nozzle 42b to a predetermined position. Specifically, the control unit 3 moves the liquid supply nozzle 42b to the upper side of the central portion of the wafer W which is away from the center Wa of the wafer W by a predetermined distance D1 (e.g., 15 mm). The center Wa of the wafer W is an example of the central portion of the wafer W.

[0097] In addition, Figure 2 In the state shown, the control unit 3 holds the rotating holding unit 30 (see Figure 1) is rotated at a predetermined rotation speed R1 (eg, 500 rpm).

[0098] In addition, at this time, the processing liquid and the processing gas are not released from the liquid supply nozzle 42b, the cleaning nozzle 42c, and the back nozzle 53. On the other hand, in the present invention, although not shown in the following drawings, the control unit 3 can also continuously release the processing gas (such as nitrogen, etc.) at a low flow rate (for example, 2L / min) from the second flow path 53b of the back nozzle 53.

[0099] Thus, in the subsequent cleaning process and rinsing process, it is possible to suppress the various processing liquids released to the back side of the wafer W from flowing back toward the second flow path 53b. Therefore, according to the embodiment, in the drying process after the rinsing process, when the processing gas for drying is released from the second flow path 53b of the back side nozzle 53, it is possible to suppress the wafer W from being contaminated by the back-flowing processing liquid.

[0100] Then, if Figure 3 As shown, the control unit 3 (refer to Figure 1 ) Change the rotation speed of the chip W from the rotation speed R1 to a specified rotation speed R2 (for example, 1500 rpm) (increase the rotation speed).

[0101] In addition, the control unit 3 releases SC1 at a predetermined flow rate F1 (e.g., 1500 mL / min) and a temperature higher than room temperature (e.g., 40° C. to 70° C.) from the liquid supply nozzle 42 b toward the front surface of the wafer W. Thus, the control unit 3 forms a liquid film of SC1 on the front surface of the wafer W.

[0102] Then, the control unit 3 releases SC1 at a predetermined flow rate (e.g., 1000 mL / min) and a temperature higher than room temperature (e.g., 40° C. to 70° C.) from the first flow path 53a of the back nozzle 53 to the back side of the wafer W. The SC1 released to the back side diffuses over the entire back side of the wafer W.

[0103] As described above, in the embodiment, the wafer W can be maintained at a temperature higher than room temperature by releasing SC1 having a temperature higher than room temperature from the back nozzle 53 to the back surface of the wafer W. Therefore, according to the embodiment, the subsequent cleaning process can be efficiently performed at a high temperature.

[0104] In addition, in the embodiment, Figure 3 In the process of the wafer W, by changing the rotation speed of the wafer W to the high rotation speed R2, the SC1 having a temperature higher than room temperature can be quickly spread over the front and back surfaces of the wafer W. Therefore, according to the embodiment, since the temperature of the wafer W can be quickly increased, the subsequent process can be quickly transferred.

[0105] In addition, in the embodiment, Figure 3In the process of Figure 2 ) position, the temperature of the central portion of the chip W can be made more uniform compared to the case where the high-temperature SC1 is released to the center Wa itself.

[0106] In other words, when high-temperature SC1 is released to the center Wa itself, the temperature distribution of the chip W becomes a single-peak type. In contrast, by releasing high-temperature SC1 to a position a predetermined distance D1 away from the center Wa, the temperature distribution of the chip W can be made double-peaked.

[0107] Then, if Figure 4 As shown, the control unit 3 (refer to Figure 1 ) While maintaining the state in which SC1 is released from the liquid supply nozzle 42b and the back nozzle 53, the rotation speed of the chip W is changed from the rotation speed R2 to a predetermined rotation speed R3 (for example, 200 rpm) (the rotation speed is reduced).

[0108] Then, if Figure 5 As shown, the control unit 3 (refer to Figure 1 ) While maintaining the state of releasing SC1 from the back nozzle 53, the release amount of SC1 released from the liquid supply nozzle 42b is changed from the flow rate F1 to a predetermined flow rate F2 (for example, 450 mL / min) (the flow rate is reduced).

[0109] In addition, the control unit 3 operates the upper supply unit 40 to move the liquid supply nozzle 42b and the cleaning nozzle 42c to a predetermined position. Specifically, the control unit 3 moves the liquid supply nozzle 42b to the upper part of the central part of the wafer W which is away from the center Wa of the wafer W by a predetermined distance D2 (e.g., 20 mm).

[0110] Thus, the control unit 3 makes the distance from the liquid supply nozzle 42 b to the center Wa of the wafer W and the distance from the cleaning nozzle 42 c to the center Wa of the wafer W substantially equal.

[0111] Then, if Figure 6 As shown, the control unit 3 (refer to Figure 1 ) While maintaining the state of releasing SC1 from the liquid supply nozzle 42b and the back nozzle 53, SC1 at a predetermined flow rate F11 (e.g., 100 mL / min) is released from the cleaning nozzle 42c toward the front side of the wafer W. In addition, the SC1 released from the cleaning nozzle 42c is at a temperature higher than room temperature (e.g., 40° C. to 70° C.).

[0112] Here, in the embodiment, in the above Figure 5In the processing, by making the distance from the liquid supply nozzle 42b to the center Wa and the distance from the cleaning nozzle 42c to the center Wa approximately equal, it is possible to suppress splashing of liquid on the chip W when SC1 is released from the cleaning nozzle 42c.

[0113] This is because, compared with the case where the SC1 is released to the center Wa of the wafer W, the momentum of the SC1 released to a position deviated from the center Wa and spread over the front surface of the wafer W is reduced directly under the cleaning nozzle 42c.

[0114] Then, if Figure 7 As shown, the control unit 3 (refer to Figure 1 ) While maintaining the state of releasing SC1 from the liquid supply nozzle 42b, the back nozzle 53 and the cleaning nozzle 42c, a predetermined flow rate F21 (for example, 20 L / min) of processing gas is released from the cleaning nozzle 42c toward the front surface of the wafer W. The flow rate F21 is an example of a first flow rate.

[0115] Thus, the mixed fluid M formed by mixing the SC1 and the processing gas is released toward the front surface of the wafer W from the cleaning nozzle 42 c.

[0116] Then, if Figure 8 As shown, the control unit 3 (refer to Figure 1 ) While maintaining the state of releasing SC1 and the mixed fluid M from the liquid supply nozzle 42b, the back nozzle 53 and the cleaning nozzle 42c, the upper supply part 40 is operated to move the cleaning nozzle 42c to above the center Wa of the chip W.

[0117] Then, if Fig. 9 As shown, the control unit 3 (refer to Figure 1 ) While maintaining the state of releasing the mixed fluid M from the cleaning nozzle 42c, the release amount of the processing gas released from the cleaning nozzle 42c is changed from the flow rate F21 to a predetermined flow rate F22 (for example, 60 L / min) (increasing the flow rate). The flow rate F22 is an example of the second flow rate.

[0118] Then, while increasing the amount of treatment gas released, as Fig. 9 As shown, the control unit 3 operates the upper supply unit 40 to move the cleaning nozzle 42c from above the center Wa of the wafer W toward the peripheral edge of the wafer W, thereby performing a cleaning process on the front surface of the wafer W with the mixed fluid M.

[0119] Moreover, if Fig.10 As shown, after the cleaning nozzle 42c reaches above the peripheral edge of the wafer W, as shown in FIG. Fig.11 As shown, the control unit 3 (refer to Figure 1 ) moves the cleaning nozzle 42c to above the central part (center Wa) of the chip W, and repeatedly performs the cleaning process of the chip W with the mixed fluid M.

[0120] Here, in the embodiment, when performing a cleaning process on the wafer W using the mixed fluid M, the process gas may be first released at a relatively low flow rate F21, then increased to a flow rate F22 for cleaning process, and then the cleaning process on the wafer W may be started. Fig.12 and Fig.13 Provide explanation.

[0121] Fig.12 4 is a diagram showing an example of the change in the flow rate of the processing gas released from the cleaning nozzle 42c in the cleaning process of the reference example. Figure 1 ) at time T1 instructs the supply unit 41e (refer to Figure 1 ) Start releasing the processing gas at a high flow rate F22 during the cleaning process.

[0122] Therefore, in the reference example, since the process gas at a high flow rate F22 is suddenly flowing from zero flow rate, the gas flow rate rises sharply, and at time T2 the gas flow rate is overshot to a flow rate Fa much larger than the flow rate F22. Thereafter, the valve of the supply unit 41e functions to recover the overshoot, and thus the process gas is released at a specified flow rate F22 from time T3.

[0123] Furthermore, in the reference example, since the gas flow rate is greatly overshot, the overshot processing gas is released to the liquid film on the wafer W, thereby sometimes generating a large amount of liquid splash on the wafer W. Furthermore, each nozzle is contaminated by the large amount of liquid splash on the wafer, and a large amount of particles may be generated on the wafer W.

[0124] Fig.13 4 is a diagram showing an example of the change in the flow rate of the processing gas released from the cleaning nozzle 42c during the cleaning process of the embodiment. Fig.13 As shown, in the embodiment, the control unit 3 (refer to Figure 1 ) at time T11 instructs the supply unit 41e (refer to Figure 1 ) starts releasing the processing gas at a flow rate F21 lower than that during the cleaning process. Thus, the processing gas is released at a specified flow rate F21 from time T12.

[0125] Then, the control unit 3 instructs the supply unit 41e to start releasing the processing gas at a high flow rate F22 during the cleaning process at time T13. In this case, the processing gas is already released from the cleaning nozzle 42c at a flow rate F21, so the overshoot generated before reaching the specified flow rate F22 at time T15 is smaller than the overshoot of the reference example.

[0126] In other words, in the cleaning process of the embodiment, the maximum flow rate Fb of the process gas until the flow rate F22 during the cleaning process is reached is larger than the maximum flow rate Fa of the process gas in the reference example (refer to Fig.12 )few.

[0127] Therefore, according to the embodiment, by using the mixed fluid M (refer to Fig. 9 ) is used for cleaning treatment, so even when the processing gas at a desired flow rate F22 is released from the cleaning nozzle 42c to the liquid film on the chip W, splashing of liquid on the chip can be suppressed.

[0128] In addition, in the cleaning process involved in the embodiment, the control unit 3 may cause the cleaning nozzle 42c to scan back and forth between the central portion (center Wa) and the peripheral portion of the wafer W once, or may scan back and forth between the central portion (center Wa) and the peripheral portion of the wafer W multiple times. In either case, at the end of the cleaning process of the embodiment, as shown in FIG. Fig.11 As shown, the control unit 3 positions the cleaning nozzle 42c above the central portion of the wafer W (center Wa).

[0129] After the cleaning process described above is completed, the control unit 3 performs a rinsing process on the wafer W. Figures 14 to 18 It is a diagram for explaining the rinsing process according to the embodiment.

[0130] In the rinsing process of the embodiment, first, as Fig.14 As shown, the control unit 3 (refer to Figure 1 ) While maintaining the state of releasing the mixed fluid M from the cleaning nozzle 42c, the release amount of the processing gas released from the cleaning nozzle 42c is changed from the flow rate F22 to a predetermined flow rate F23. The flow rate F23 is an example of a third flow rate. The flow rate F23 is a value smaller than the flow rate F22, for example, 20 L / min.

[0131] Thus, by continuously releasing the mixed fluid M generated by the processing gas with a large flow rate F22 toward the center of the chip W, structural damage (collapse, etc.) such as the pattern of the semiconductor device formed in the center of the chip W (eg, center Wa) can be suppressed.

[0132] Then, if Fig.15 As shown, the control unit 3 (refer to Figure 1 ) While maintaining the state of releasing SC1 and the mixed fluid M from the liquid supply nozzle 42b, the back nozzle 53 and the cleaning nozzle 42c, the liquid supply nozzle 42b is moved to above the central part (center Wa) of the chip W.

[0133] Then, if Fig.16 As shown, the control unit 3 (refer to Figure 1 ) DIW at room temperature is released from the liquid supply nozzle 42b at a predetermined flow rate F3 (for example, 450 mL / min) toward the front side of the central portion (center Wa) of the wafer W. Thus, the control unit 3 performs a rinse process on the front side of the wafer W with DIW.

[0134] Then, the control unit 3 discharges room temperature DIW from the first flow path 53a of the back nozzle 53 at a predetermined flow rate (eg, 1500 mL / min) toward the back surface of the wafer W. Thus, the control unit 3 performs a rinse process on the back surface of the wafer W using DIW.

[0135] In addition, if Fig.16 As shown, when DIW starts to be discharged from the liquid supply nozzle 42b and the back nozzle 53, the mixed fluid M continues to be discharged from the cleaning nozzle 42c. At this time, the discharge amount of SC1 of the mixed fluid M is the flow rate F11, and the discharge amount of the processing gas is the flow rate F23.

[0136] As described above, in the embodiment, the mixed fluid M may be released from the cleaning nozzle 42c until the rinse liquid (DIW) starts to be released from the liquid supply nozzle 42b. Thus, compared with the case where the processing liquid released from the liquid supply nozzle 42b is switched from SC1 to DIW after the release of the mixed fluid M is stopped, the liquid film can be continuously formed on the entire front surface of the wafer W.

[0137] Therefore, according to the embodiment, when the cleaning process is shifted to the rinsing process, at least a portion of the front surface of the wafer W is dried, thereby preventing particles from being attached to the wafer W.

[0138] Then, if Fig.17 As shown, the control unit 3 (refer to Figure 1 ) While maintaining the state of releasing DIW from the liquid supply nozzle 42b and the back nozzle 53, the release of the processing gas from the cleaning nozzle 42c is stopped (ie, the release flow rate of the processing gas = 0). Thus, the control unit 3 releases only SC1 from the liquid supply nozzle 42b.

[0139] Then, if Fig.18 As shown, the control unit 3 (refer to Figure 1 ) While maintaining the state of discharging DIW from the liquid supply nozzle 42b and the back nozzle 53, the discharge of SC1 from the cleaning nozzle 42c is stopped. Thus, only DIW as a rinse liquid is supplied to the front surface of the wafer W.

[0140] As described above, in the embodiment, the control unit 3 may first stop releasing the process gas and then stop releasing SC1 when stopping releasing the mixed fluid M from the cleaning nozzle 42c. Thus, compared with the case where the process gas is released after stopping the release of SC1, the liquid film can be continuously formed on the entire front surface of the wafer W.

[0141] Therefore, according to the embodiment, when the cleaning process is shifted to the rinsing process, at least a portion of the front surface of the wafer W is dried, thereby preventing particles from being attached to the wafer W.

[0142] then Fig.18In the process shown, the control unit 3 increases the discharge amount of DIW from the liquid supply nozzle 42b or increases the rotation speed of the wafer W, thereby performing a rinsing process (not shown) on the wafer W.

[0143] In addition, for the wafer W that has completed the rinsing process, the control unit 3 controls the spin holding unit 30 and the like to perform a drying process (not shown) based on spin drying on the wafer W. In addition, during the drying process, the control unit 3 may also release a processing gas at a predetermined flow rate (e.g., 2 L / min) from the second flow path 53 b of the back nozzle 53.

[0144] Then, when the drying process of the wafer W is completed, a series of substrate processing in the substrate processing apparatus 1 is completed.

[0145] The substrate processing device 1 of the embodiment includes a rotating holding part 30, a cleaning nozzle 42c, a liquid supply nozzle 42b and a control part 3. The rotating holding part 30 holds the substrate (wafer W) in a manner that it can rotate. The cleaning nozzle 42c is configured to be able to move from the central part of the substrate (wafer W) to the peripheral part above the substrate (wafer W) held and rotated by the rotating holding part 30, and release the mixed fluid M of the cleaning liquid (SC1) and the gas onto the substrate (wafer W). The liquid supply nozzle 42b is configured to be able to move integrally with the cleaning nozzle 42c above the substrate (wafer W) and release the liquid (SC1) onto the substrate (wafer W). The control part 3 controls each part. The cleaning nozzle 42c can release the cleaning liquid (SC1) and the gas independently. The control part 3 performs the first process, the second process, the third process and the fourth process. The first process releases liquid (SC1) from the liquid supply nozzle 42b to the central part of the substrate (wafer W), forming a liquid film of the liquid (SC1) on the substrate (wafer W). The second process releases the cleaning liquid (SC1) from the cleaning nozzle 42c to the central part of the substrate (wafer W) on the substrate (wafer W) on which the liquid film of the liquid (SC1) is formed. The third process releases the mixed fluid M to the central part of the substrate (wafer W) by releasing a first flow rate (flow rate F21) of gas from the cleaning nozzle 42c to the substrate (wafer W). The fourth process changes the flow rate of the gas released from the cleaning nozzle 42c to a second flow rate (flow rate F22) greater than the first flow rate, and moves the cleaning nozzle 42c that releases the mixed fluid M and the liquid supply nozzle 42b that releases the liquid (SC1) from above the central part of the substrate (wafer W) to above the peripheral part. Thus, it is possible to suppress the generation of splashes on the wafer when the cleaning process is performed using the mixed fluid M.

[0146] In addition, in the substrate processing device 1 of the embodiment, the control unit 3 also performs the fifth process and the sixth process. In the fifth process, after the cleaning nozzle 42c reaches the upper part of the peripheral portion of the substrate (wafer W), the cleaning nozzle 42c and the liquid supply nozzle 42b are moved from the upper part of the peripheral portion of the substrate (wafer W) to the upper part of the central portion while releasing the mixed fluid M from the cleaning nozzle 42c and releasing the liquid (SC1) from the liquid supply nozzle 42b. The sixth process releases the rinse liquid (DIW) to the substrate (wafer W) from the liquid supply nozzle 42b moved to the upper part of the central portion. Thus, when the cleaning process is transferred to the rinse process, at least a part of the front surface of the wafer W is dried, thereby preventing particles from adhering to the wafer W.

[0147] In addition, in the substrate processing apparatus 1 of the embodiment, the control unit 3 also performs a seventh process. In the seventh process, after starting the sixth process, the release of the gas in the cleaning nozzle 42c is first stopped, and then the release of the cleaning liquid (SC1) is stopped. As a result, when the cleaning process is transferred to the rinsing process, at least a portion of the front surface of the wafer W is dried, thereby preventing particles from being attached to the wafer W.

[0148] In addition, in the substrate processing device 1 of the embodiment, the control unit 3 also performs the fifth process and the eighth process. In the fifth process, after the cleaning nozzle 42c reaches the upper part of the peripheral portion of the substrate (wafer W), the cleaning nozzle 42c and the liquid supply nozzle 42b are moved from the upper part of the peripheral portion of the substrate (wafer W) to the upper part of the central portion while releasing the mixed fluid M from the cleaning nozzle 42c and releasing the liquid (SC1) from the liquid supply nozzle 42b. The eighth process changes the flow rate of the gas released from the cleaning nozzle 42c moved to the upper part of the central portion of the substrate (wafer W) to a third flow rate (flow rate F23) smaller than the second flow rate (flow rate F22). Thus, the pattern of the semiconductor device formed in the central portion of the wafer W can be suppressed from collapsing.

[0149] In addition, the substrate processing apparatus 1 of the embodiment further includes a back nozzle 53 for releasing another liquid (SC1) to the back side of the substrate (wafer W) held by the rotating holding unit 30. In addition, the control unit 3 further performs a ninth process. In the ninth process, when the fourth process is performed, another liquid (SC1) having a temperature higher than room temperature is released from the back nozzle 53 to the back side of the substrate (wafer W). Thus, the cleaning process can be efficiently performed at a high temperature.

[0150] <Substrate Processing Steps>

[0151] Next, refer to Figure 19 to Figure 22 A process of substrate processing by the substrate processing apparatus 1 according to the embodiment will be described. Fig.191 is a flowchart showing an example of a procedure of substrate processing executed by the substrate processing apparatus 1 according to the embodiment.

[0152] In the substrate processing of the embodiment, first, the control unit 3 controls the substrate transport device and the like to carry the wafer W into the processing chamber 20 through the carrying port of the processing chamber 20 and hold it by the rotation holding unit 30 (step S101).

[0153] Next, the control unit 3 controls the upper supply unit 40 and the like to release high-temperature SPM from the nozzle 42a to the front surface of the wafer W, thereby performing substrate processing on the wafer W (step S102). Then, the control unit 3 controls the upper supply unit 40 and the lower supply unit 50 and the like to release DIW from the liquid supply nozzle 42b and the back nozzle 53 to both surfaces of the wafer W, thereby performing a rinsing process on the wafer W (step S103).

[0154] Next, the control unit 3 controls the upper supply unit 40 and the lower supply unit 50, etc., to perform a cleaning process on the wafer W (step S104). The details of this cleaning process will be described later.

[0155] Next, the control unit 3 controls the upper supply unit 40 and the lower supply unit 50, etc., to perform a rinsing process on the wafer W (step S105). The details of the rinsing process will be described later.

[0156] Finally, the control unit 3 controls the spin holding unit 30 and the like to perform a drying process on the wafer W by spin drying and the like (step S106 ), thereby completing a series of substrate processing.

[0157] In addition, in the present invention, the substrate processing performed before the processing of steps S104 and S105 is not limited to the substrate processing based on SPM, etc., and various substrate processing can be performed. In addition, in the present invention, the substrate processing device 1 can also perform only the processing of steps S104 to S106 on the wafer W that has been substrate processed in other substrate processing devices.

[0158] Fig. 20 1 is a flowchart showing an example of steps of a cleaning process performed by the substrate processing apparatus 1 according to the embodiment. In the cleaning process according to the embodiment, first, the control unit 3 controls the upper supply unit 40 and the like to release SC1 from the liquid supply nozzle 42b to the central portion of the front surface of the wafer W, and forms a liquid film of SC1 on the front surface of the wafer W using the liquid supply nozzle 42b (step S201). The process of S201 is an example of the first process.

[0159] Next, the control unit 3 controls the upper supply unit 40 and the like to release SC1 from the cleaning nozzle 42c toward the center of the front surface of the wafer W (step S202). The process of S202 is an example of the second process.

[0160] Next, the control unit 3 controls the upper supply unit 40 and the like to release the first flow rate (flow rate F21) of the processing gas from the cleaning nozzle 42c to the central portion of the front surface of the wafer W simultaneously with SC1. Thus, the control unit 3 releases the mixed fluid M to the central portion of the front surface of the wafer W (step S203). The process of S203 is an example of the third process.

[0161] Next, the control unit 3 controls the upper supply unit 40 and the like to change the release flow rate of the processing gas from the cleaning nozzle 42c to a second flow rate (flow rate F22) larger than the first flow rate (flow rate F21) (step S204).

[0162] Then, the controller 3 moves the cleaning nozzle 42c that releases the mixed fluid M at the second flow rate (flow rate F22) of the process gas from above the center to above the periphery of the wafer W (step S205). The processing of steps S204 and S205 is an example of the fourth processing.

[0163] Next, the control unit 3 controls the upper supply unit 40 and the like to move the cleaning nozzle 42c that releases the mixed fluid M from above the peripheral portion to above the central portion of the wafer W (step S206). The process of S206 is an example of the fifth process.

[0164] Next, the control unit 3 determines whether to further reciprocate the cleaning nozzle 42c that releases the mixed fluid M above the wafer W (step S207). Then, if it is determined that the cleaning nozzle 42c is further reciprocated above the wafer W (step S207, yes), the process returns to step S205.

[0165] On the other hand, when it is determined that the cleaning nozzle 42c is not to be further reciprocated above the wafer W (step S207, No), a series of cleaning processes are terminated.

[0166] In parallel with the processing of steps S201 to S207 described so far, the control unit 3 controls the lower supply unit 50 and the like to release the high-temperature SC1 from the back nozzle 53 to the center of the back surface of the wafer W (step S208). The processing of S208 is an example of the ninth processing.

[0167] Fig.21 1 is a flowchart showing an example of steps of a rinsing process performed by the substrate processing apparatus 1 of the embodiment. In the rinsing process of the embodiment, first, the control unit 3 controls the upper supply unit 40 and the like to change the release flow rate of the processing gas in the cleaning nozzle 42c to a third flow rate (flow rate F23) that is less than the second flow rate (step S301). The process of S301 is an example of the eighth process.

[0168] Next, the control unit 3 controls the upper supply unit 40 and the like to move the liquid supply nozzle 42b from which SC1 is released to the central portion (center Wa) of the wafer W (step S302). Then, the control unit 3 controls the upper supply unit 40 and the like to release DIW at room temperature as a rinse liquid from the liquid supply nozzle 42b (step S303). The processing of S303 is an example of the sixth processing.

[0169] Next, the control unit 3 controls the upper supply unit 40 and the like to stop releasing the processing gas in the cleaning nozzle 42c that releases the mixed fluid M (step S304). Then, the upper supply unit 40 and the like are controlled to stop releasing SC1 in the cleaning nozzle 42c that releases SC1 (step S305). The processing of steps S304 and S305 is an example of the seventh processing.

[0170] Finally, the control unit 3 controls the upper supply unit 40 and the like to perform a rinsing process on the wafer W using the room temperature DIW discharged from the liquid supply nozzle 42 b (step S306 ), thereby completing a series of rinsing processes.

[0171] In parallel with the processing of steps S301 to S306 described so far, the control unit 3 controls the lower supply unit 50 and the like to discharge room temperature DIW from the back nozzle 53 toward the center of the back surface of the wafer W (step S307 ).

[0172] Fig. 22 FIG. 1 is a flowchart showing another example of the steps of the cleaning process performed by the substrate processing apparatus 1 according to the embodiment. Fig. 20 The liquid treatment of the back side of the wafer W shown as the process of step S208 is the same as Fig. 20 The examples are different.

[0173] In addition, the processing of other steps S401 to S407 is the same as Fig. 20 The processes in steps S201 to S207 are the same, so detailed descriptions are omitted.

[0174] In another example of cleaning processing, in parallel with the processing of steps S401 to S407, the control unit 3 controls the lower supply unit 50 and the like to release high-temperature DIW from the back nozzle 53 toward the center of the back side of the wafer W (step S408). The processing of S408 is another example of the ninth processing.

[0175] As described above, in another example, DIW, which is cheaper than SC1, is released to the back side of the wafer W to raise the temperature of the back side of the wafer W. Thus, the cleaning process can be performed efficiently at a high temperature and at a low cost.

[0176] The substrate processing method involved in the embodiment includes a first step (step S201), a second step (step S202), a third step (step S203) and a fourth step (steps S204, S205). In the first step (step S201), liquid (SC1) is released from the liquid supply nozzle 42b to the central part of the rotating substrate (wafer W), and a liquid film of the liquid (SC1) is formed on the substrate (wafer W). In the second step (step S202), the cleaning liquid (SC1) is released from the cleaning nozzle 42c to the central part of the substrate (wafer W) on the substrate (wafer W) on which the liquid film of the liquid (SC1) is formed. In the third step (step S203), a gas of a first flow rate (flow rate F21) is released from the cleaning nozzle 42c to the substrate (wafer W), thereby releasing a mixed fluid M of the cleaning liquid (SC1) and the gas to the central part of the substrate (wafer W). In the fourth step (steps S204 and S205), the flow rate of the gas released from the cleaning nozzle 42c is changed to a second flow rate (flow rate F22) greater than the first flow rate (flow rate F21), and the cleaning nozzle 42c that releases the mixed fluid M and the liquid supply nozzle 42b that releases the liquid (SC1) are moved from above the central portion of the substrate (wafer W) to above the peripheral portion. Thus, it is possible to suppress the generation of liquid splashes on the wafer W when the mixed fluid M is used for cleaning.

[0177] In addition, the substrate processing method of the embodiment also includes a fifth step (step S206) and a sixth step (step S303). In the fifth step (step S206), after the cleaning nozzle 42c reaches the top of the peripheral portion of the substrate (wafer W), the cleaning nozzle 42c and the liquid supply nozzle 42b are released from the top of the peripheral portion of the substrate (wafer W) to the top of the central portion while releasing the mixed fluid M from the cleaning nozzle 42c and releasing the liquid (SC1) from the liquid supply nozzle 42b. In the sixth step (step S303), the rinsing liquid (DIW) is released from the liquid supply nozzle 42b moved to the top of the central portion of the substrate (wafer W) to the substrate (wafer W). Thus, when the cleaning process is transferred to the rinsing process, at least a portion of the front side of the wafer W is dried, thereby preventing particles from adhering to the wafer W.

[0178] In addition, the substrate processing method of the embodiment further includes a seventh step (steps S304 and S305). In the seventh step (steps S304 and S305), after starting the sixth step (step S303), the release of the gas is first stopped in the cleaning nozzle 42c, and then the release of the cleaning liquid (SC1) is stopped. As a result, when the cleaning process is transferred to the rinsing process, at least a portion of the front surface of the wafer W is dried, thereby preventing particles from being attached to the wafer W.

[0179] In addition, the substrate processing method of the embodiment also includes a fifth step (step S206) and an eighth step (step S301). In the fifth step (step S206), after the cleaning nozzle 42c reaches the top of the peripheral portion of the substrate (wafer W), the cleaning nozzle 42c and the liquid supply nozzle 42b are moved from the top of the peripheral portion of the substrate (wafer W) to the top of the central portion while releasing the mixed fluid M from the cleaning nozzle 42c and releasing the liquid (SC1) from the liquid supply nozzle 42b. The eighth step (step S301) changes the flow rate of the gas released from the cleaning nozzle 42c moved to the top of the central portion of the substrate (wafer W) to a third flow rate (flow rate F23) that is smaller than the second flow rate (flow rate F22). Thus, the pattern of the semiconductor device formed in the central portion of the wafer W can be suppressed from collapsing.

[0180] In addition, the substrate processing method of the embodiment further includes a ninth step (step S208). In the ninth step (step S208), when executing the fourth step (steps S204 and S205), another liquid (SC1) having a temperature higher than room temperature is released from the back nozzle 53 to the back of the substrate (wafer W). Thus, the cleaning process can be efficiently performed at a high temperature.

[0181] The above describes the embodiment of the present invention, but the present invention is not limited to the above embodiment, and various changes can be made as long as they do not deviate from the main purpose. For example, in the above embodiment, an example of using SC1 as a cleaning liquid as one of the raw materials of the mixed fluid M is shown, but one of the raw materials of the mixed fluid M is not limited to SC1, and various processing liquids can be used.

[0182] The embodiments disclosed herein should be considered to be illustrative and non-restrictive in all aspects. In fact, the above embodiments can be implemented in many ways. In addition, the above embodiments can also be omitted, replaced, and changed in various ways without departing from the attached claims and their gist.

Claims

1. A substrate processing device, characterized in that: include: a rotation holding portion for holding the substrate in a rotatable manner; a cleaning nozzle, arranged to be movable from a central portion to a peripheral portion of the substrate above the substrate held and rotated by the rotation holding portion, and to release a mixed fluid of a cleaning liquid and a gas onto the substrate; a liquid supply nozzle for releasing liquid onto the substrate, and arranged to be movable integrally with the cleaning nozzle above the substrate; and The control unit that controls each unit, The cleaning nozzle can release the cleaning liquid and the gas independently. The control unit performs: In a first process, the liquid is released from the liquid supply nozzle toward the central portion of the substrate to form a liquid film of the liquid on the substrate; a second process of releasing the cleaning liquid from the cleaning nozzle toward the central portion of the substrate on the substrate on which the liquid film of the liquid is formed; a third process of releasing the mixed fluid toward the central portion of the substrate by releasing a first flow rate of the gas from the cleaning nozzle toward the substrate; and The fourth treatment changes the flow rate of the gas released from the cleaning nozzle to a second flow rate greater than the first flow rate, and moves the cleaning nozzle that releases the mixed fluid and the liquid supply nozzle that releases the liquid from above the central portion of the substrate to above the peripheral portion.

2. The substrate processing device according to claim 1, characterized in that: The control unit also performs: A fifth process, after the cleaning nozzle reaches above the peripheral portion of the substrate, while releasing the mixed fluid from the cleaning nozzle and releasing the liquid from the liquid supply nozzle, the cleaning nozzle and the liquid supply nozzle are moved from above the peripheral portion of the substrate to above the central portion; and In a sixth process, the rinse liquid is discharged toward the substrate from the liquid supply nozzle moved to above the center portion of the substrate.

3. The substrate processing device according to claim 2, characterized in that: The control unit further executes a seventh process of first stopping the release of the gas and then stopping the release of the cleaning liquid in the cleaning nozzle after starting the sixth process.

4. The substrate processing device according to any one of claims 1 to 3, characterized in that: The control unit also performs: A fifth process, after the cleaning nozzle reaches above the peripheral portion of the substrate, while releasing the mixed fluid from the cleaning nozzle and releasing the liquid from the liquid supply nozzle, the cleaning nozzle and the liquid supply nozzle are moved from above the peripheral portion of the substrate to above the central portion; and In an eighth process, a flow rate of the gas released from the cleaning nozzle moved to above the center portion of the substrate is changed to a third flow rate that is smaller than the second flow rate.

5. The substrate processing device according to any one of claims 1 to 3, characterized in that: The device further comprises a back side nozzle for releasing other liquid to the back side of the substrate held on the rotation holding portion. The control unit further executes a ninth process of releasing the other liquid having a temperature higher than room temperature from the back nozzle toward the back side of the substrate when executing the fourth process.

6. A substrate processing method, characterized in that: include: In a first step, liquid is released from a liquid supply nozzle toward a central portion of a rotating substrate to form a liquid film of the liquid on the substrate; The second step is to release the cleaning liquid from the cleaning nozzle toward the central part of the substrate on the substrate on which the liquid film of the liquid is formed; The third step is to release a mixed fluid of the cleaning liquid and the gas toward the central portion of the substrate by releasing a first flow rate of gas from the cleaning nozzle onto the substrate; and In the fourth step, the flow rate of the gas released from the cleaning nozzle is changed to a second flow rate greater than the first flow rate, and the cleaning nozzle that releases the mixed fluid and the liquid supply nozzle that releases the liquid are moved from above the central part of the substrate to above the peripheral part.

7. The substrate processing method according to claim 6, characterized in that: Also includes: A fifth step, after the cleaning nozzle reaches above the peripheral portion of the substrate, while releasing the mixed fluid from the cleaning nozzle and releasing the liquid from the liquid supply nozzle, the cleaning nozzle and the liquid supply nozzle are moved from above the peripheral portion of the substrate to above the central portion; and In a sixth step, the rinse liquid is released toward the substrate from the liquid supply nozzle moved to above the center portion of the substrate.

8. The substrate processing method according to claim 7, characterized in that: Also includes: In the seventh step, after the sixth step is started, the release of the gas in the cleaning nozzle is first stopped, and then the release of the cleaning liquid is stopped.

9. The substrate processing method according to any one of claims 6 to 8, characterized in that: Also includes: A fifth step, after the cleaning nozzle reaches above the peripheral portion of the substrate, while releasing the mixed fluid from the cleaning nozzle and releasing the liquid from the liquid supply nozzle, the cleaning nozzle and the liquid supply nozzle are moved from above the peripheral portion of the substrate to above the central portion; and In an eighth step, a flow rate of the gas released from the cleaning nozzle moved to above the center portion of the substrate is changed to a third flow rate that is smaller than the second flow rate.

10. The substrate processing method according to any one of claims 6 to 8, characterized in that: Also includes: A ninth step, while executing the fourth step, releasing other liquid having a temperature higher than room temperature from a back nozzle to the back side of the substrate.

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