Medical endoscope light source host and semiconductor laser temperature control method

Abstract

The invention provides a medical endoscope light source host, a semiconductor laser temperature control method and a storage medium, and belongs to the technical field of computers. A first control parameter for a refrigeration sheet and a second control parameter for a heat dissipation device can be determined according to the hot end temperature of the refrigeration sheet and the difference value between the set target temperature and the cold end temperature of the refrigeration sheet, the refrigeration sheet is controlled based on the first control parameter, and the heat dissipation device is controlled based on the second control parameter. Therefore, the temperature of the semiconductor laser is in a set temperature range containing the target temperature. According to the hot end temperature of the refrigeration sheet and the difference value between the set target temperature and the cold end temperature of the refrigeration sheet, parameter adjustment is carried out on the refrigeration sheet and the heat dissipation device in time, and the control precision of the temperature of the semiconductor laser can be improved.

Description

Technical Field

[0001] The present application relates to the field of computer technology, and in particular to a medical endoscope light source host, a semiconductor laser temperature control method and a storage medium. Background Art

[0002] Semiconductor laser is a laser that uses semiconductor materials as working materials, also known as laser diode (LD). Semiconductor laser has the advantages of small size, high efficiency, low power consumption, good reliability and long service life. It is widely used in various fields such as medical treatment, national defense and military and industrial testing.

[0003] The characteristics of semiconductor lasers, such as output power, central wavelength, threshold current and service life, are all related to their own temperature. Therefore, high-precision temperature control of semiconductor lasers is crucial.

[0004] Traditional semiconductor laser temperature control methods usually use digital PID control algorithms to set parameters. Once the parameters are set and calculated, they remain fixed throughout the control process. However, the temperature of semiconductor lasers has characteristics such as instability, uncertainty, time-varying, nonlinearity, and time lag. Using the same set of parameters to adapt to the entire process of the temperature control system will result in low control accuracy. Summary of the invention

[0005] In order to solve the above-mentioned problems in the prior art, the embodiments of the present application provide a medical endoscope light source host, a semiconductor laser temperature control method and a storage medium, which can improve the control accuracy of the semiconductor laser temperature.

[0006] In a first aspect, an embodiment of the present application provides a medical endoscope light source host, the medical endoscope light source host comprising a semiconductor laser, a cooling plate, a first temperature sensor, a second temperature sensor, a heat sink and a processor; the cold end of the cooling plate is connected to the semiconductor laser, and the hot end of the cooling plate is connected to the heat sink; the first temperature sensor is connected to the cold end of the cooling plate; the second temperature sensor is connected to the hot end of the cooling plate;

[0007] The first temperature sensor is used to monitor the cold end temperature of the refrigeration plate; the second temperature sensor is used to monitor the hot end temperature of the refrigeration plate;

[0008] The processor is configured to:

[0009] Acquire a first resistance value of the first temperature sensor and a second resistance value of the second temperature sensor respectively, and determine the cold end temperature of the refrigeration plate according to the first resistance value and determine the hot end temperature of the refrigeration plate according to the second resistance value by using a pre-built temperature calculation model;

[0010] Determine the difference between the set target temperature and the cold end temperature of the refrigeration plate;

[0011] Determine a first control parameter for the refrigeration fin and a second control parameter for the heat dissipation device according to the difference and the hot end temperature of the refrigeration fin;

[0012] The cooling fin is controlled based on the first control parameter, and the heat sink is controlled based on the second control parameter so that the temperature of the semiconductor laser is within a set temperature range including the target temperature.

[0013] In a possible implementation, the processor is specifically configured to:

[0014] The difference is used as the horizontal coordinate and the hot end temperature is used as the vertical coordinate to determine the coordinate point in the control coordinate system; the horizontal axis and the vertical axis of the control coordinate system are respectively divided into a plurality of segments according to a set coordinate scale, and the plurality of segments of the horizontal axis and the plurality of segments of the vertical axis divide the control coordinate system into a plurality of grids, each grid having a corresponding control strategy;

[0015] The target grid to which the coordinate point belongs in the control coordinate system is determined, and according to the control strategy corresponding to the target grid, a first control parameter for the cooling fin and a second control parameter for the heat dissipation device are respectively determined.

[0016] In a possible implementation, the coordinate scale set on the horizontal axis includes a hysteresis lower limit scale, a hysteresis upper limit scale, a dead zone lower limit scale and a dead zone upper limit scale, and the coordinate scale set on the vertical axis includes a normal scale, a limit lower limit scale, a limit upper limit scale and a danger limit scale.

[0017] In a possible implementation, the pre-constructed temperature calculation model is: T=a / (ln(R)+b)+c, where T is the calculated temperature value, R is the acquired resistance value of the temperature sensor, and a, b, and c are all constants.

[0018] In a possible implementation manner, the control strategy corresponding to any grid among the multiple grids includes a parameter determination strategy for determining a first control parameter of the cooling fin and a second control parameter for the heat dissipation device.

[0019] In a possible implementation manner, the parameter determination strategy corresponding to the grid belonging to the first control area is: taking the maximum output voltage corresponding to the hot end temperature at the current moment as the output voltage of the refrigeration plate;

[0020] The parameter determination strategy corresponding to the grid belonging to the second control area is: determine the output voltage of the refrigeration plate according to the weighted sum of the difference between the target temperature and the cold end temperature at the current moment, the difference increment and the ratio of the temperature sampling period; the difference increment is determined according to the difference between the target temperature and the cold end temperature at the current moment, and the difference between the target temperature and the cold end temperature at the previous moment;

[0021] The parameter determination strategy corresponding to the grid belonging to the third control area is: determine the output voltage of the refrigeration plate according to the weighted sum of the difference between the target temperature and the current cold end temperature, the sum of the difference between the target temperature and the cold end temperature at each sampling moment in the temperature sampling period, and the ratio of the difference increment to the temperature sampling period;

[0022] The parameter determination strategy corresponding to the grid belonging to the fourth control area is: taking the set minimum output voltage as the output voltage of the refrigeration plate;

[0023] The parameter determination strategy corresponding to the grid belonging to the fifth control area is: if the output voltage of the refrigeration plate at the previous moment is the set minimum output voltage, then the minimum output voltage is used as the output voltage of the refrigeration plate; otherwise, the maximum output voltage corresponding to the current hot end temperature is used as the output voltage of the refrigeration plate;

[0024] The parameter determination strategy corresponding to the grid belonging to the sixth control area is that if the output voltage of the refrigeration plate at the previous moment is the set minimum output voltage, the minimum output voltage is used as the output voltage of the refrigeration plate; otherwise, the output voltage of the refrigeration plate is determined according to the weighted sum of the difference between the target temperature and the current cold end temperature, the sum of the difference between the target temperature and the cold end temperature at each sampling moment in the temperature sampling period, and the ratio of the difference increment to the temperature sampling period.

[0025] In a possible implementation manner, the second control parameter is a pulse duty cycle of the heat dissipation device.

[0026] In a second aspect, an embodiment of the present application provides a semiconductor laser temperature control method, which is applied to the medical endoscope light source host provided in the first aspect of the embodiment of the present application, and the method includes:

[0027] Acquire a first resistance value of the first temperature sensor and a second resistance value of the second temperature sensor respectively, and determine the cold end temperature of the refrigeration plate according to the first resistance value and determine the hot end temperature of the refrigeration plate according to the second resistance value by using a pre-built temperature calculation model;

[0028] Determine the difference between the set target temperature and the cold end temperature of the refrigeration plate;

[0029] Determine a first control parameter for the refrigeration fin and a second control parameter for the heat dissipation device according to the difference and the hot end temperature of the refrigeration fin;

[0030] The cooling fin is controlled based on the first control parameter, and the heat sink is controlled based on the second control parameter so that the temperature of the semiconductor laser is within a set temperature range including the target temperature.

[0031] In a third aspect, an embodiment of the present application provides a semiconductor laser temperature control device, comprising:

[0032] a data acquisition unit, configured to respectively acquire a first resistance value of the first temperature sensor and a second resistance value of the second temperature sensor, and determine a cold end temperature of the refrigeration plate according to the first resistance value and a hot end temperature of the refrigeration plate according to the second resistance value by using a pre-built temperature calculation model;

[0033] A control unit, used to determine the difference between the set target temperature and the cold end temperature of the refrigeration plate;

[0034] Determine a first control parameter for the refrigeration fin and a second control parameter for the heat dissipation device according to the difference and the hot end temperature of the refrigeration fin;

[0035] The cooling fin is controlled based on the first control parameter, and the heat sink is controlled based on the second control parameter so that the temperature of the semiconductor laser is within a set temperature range including the target temperature.

[0036] In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the method described in the second aspect is implemented.

[0037] The embodiments of the present application provide a medical endoscope light source host, a semiconductor laser temperature control method and a storage medium, which can respectively determine the first control parameter for the cooling plate and the second control parameter for the heat sink according to the hot end temperature of the cooling plate and the difference between the set target temperature and the cold end temperature of the cooling plate, and control the cooling plate based on the first control parameter and the heat sink based on the second control parameter, so that the temperature of the semiconductor laser is within the set temperature range including the target temperature. According to the hot end temperature of the cooling plate and the difference between the set target temperature and the cold end temperature of the cooling plate, the parameters of the cooling plate and the heat sink are adjusted in time, so as to improve the control accuracy of the semiconductor laser temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0039] Figure 1 A schematic diagram of the structure of a medical endoscope light source host provided in an embodiment of the present application;

[0040] Figure 2 A flow chart of a semiconductor laser temperature control method provided in an embodiment of the present application;

[0041] Figure 3 A schematic diagram of a resistance value and temperature relationship curve provided in an embodiment of the present application;

[0042] Figure 4 A schematic diagram of another resistance value and temperature relationship curve provided in an embodiment of the present application;

[0043] Figure 5 A flow chart of a semiconductor laser temperature control method provided in an embodiment of the present application;

[0044] Figure 6 A flow chart of a semiconductor laser temperature control method provided in an embodiment of the present application;

[0045] Figure 7 A schematic diagram of a coordinate system provided in an embodiment of the present application;

[0046] Figure 8 A schematic diagram of a coordinate system provided in an embodiment of the present application;

[0047] Fig. 9 A schematic diagram of a coordinate system provided in an embodiment of the present application;

[0048] Fig.10 A schematic diagram of a coordinate system provided in an embodiment of the present application;

[0049] Fig.11 A schematic diagram of a corresponding relationship between current and output power provided in an embodiment of the present application;

[0050] Fig.12 A schematic diagram of a corresponding relationship between current and output voltage provided in an embodiment of the present application;

[0051] Fig.13 A schematic diagram of a coordinate system provided in an embodiment of the present application;

[0052] Fig.14 A schematic diagram of a coordinate system provided in an embodiment of the present application;

[0053] Fig.15 A schematic diagram of a coordinate system provided in an embodiment of the present application;

[0054] Fig.16 A schematic diagram of a coordinate system provided in an embodiment of the present application;

[0055] Fig.17 A schematic diagram of a coordinate system provided in an embodiment of the present application;

[0056] Fig.18 A schematic diagram of a coordinate system provided in an embodiment of the present application;

[0057] Fig.19 A schematic diagram of a semiconductor laser temperature control device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0058] In order to make the purpose, technical solutions and advantages of this application clearer, this application will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0059] It should be noted that the application scenarios described in the following embodiments of the present application are intended to more clearly illustrate the technical solutions of the embodiments of the present application, and do not constitute a limitation on the technical solutions provided by the embodiments of the present application. A person of ordinary skill in the art can know that with the emergence of new application scenarios, the technical solutions provided by the embodiments of the present application are also applicable to similar technical problems.

[0060] The embodiments of the present application provide a medical endoscope light source host, a semiconductor laser temperature control method and a storage medium. According to the hot end temperature of the cooling plate and the difference between the set target temperature and the cold end temperature of the cooling plate, the first control parameter for the cooling plate and the second control parameter for the heat sink can be determined respectively, and the cooling plate is controlled based on the first control parameter, and the heat sink is controlled based on the second control parameter, so that the temperature of the semiconductor laser is within the set temperature range including the target temperature. According to the hot end temperature of the cooling plate and the difference between the set target temperature and the cold end temperature of the cooling plate, the parameters of the cooling plate and the heat sink are adjusted in time, so as to improve the control accuracy of the semiconductor laser temperature.

[0061] Semiconductor lasers have the advantages of small size, high efficiency, low power consumption, good reliability and long service life. They are widely used in various fields such as medical treatment, national defense and military, and industrial testing.

[0062] In a possible application scenario, a semiconductor laser temperature control method in an embodiment of the present application can be applied to a doctor performing surgery using a medical endoscope light source host. The medical endoscope light source host is a lighting product designed based on LED (Light Emitting Diode) and semiconductor lasers. The medical endoscope light source host can provide near-infrared laser output to assist doctors in performing surgery.

[0063] like Figure 1 As shown, the medical endoscope light source host 100 may include a processor 101, an LED driving board 102, a semiconductor laser / refrigeration plate driving board 103, an LED 104, a semiconductor laser 105, a refrigerator 106, a heat sink 107, a fusion optical path 108, a coupling optical path 109, a light guide 110, a first temperature sensor 111 and a second temperature sensor 112.

[0064] When the medical endoscope light source host 100 assists the doctor in performing the operation, the doctor can set the laser light intensity. After receiving the set laser light intensity, the processor 101 can control the LED driver board 102 to output current to the LED 104, control the semiconductor laser / refrigeration plate driver board 103 to output current to the semiconductor laser 105 and the refrigeration plate 106, and control the heat sink 107 to dissipate heat for the hot end of the refrigeration plate 106. After the LED 104 and the semiconductor laser 105 are powered on, a fused optical path 108 can be generated. The fused optical path 108 can be processed to generate a coupled optical path 109. Finally, the coupled optical path 109 can generate a light guide 110 through a light guide interface, that is, a near-infrared laser output. During the process of the medical endoscope light source host 100 assisting the doctor in performing surgery, in order to ensure the stability of the performance of the semiconductor laser 105, it is necessary to use the first temperature sensor 111 to monitor the cold end temperature of the cooling plate 106, and use the second temperature sensor 112 to monitor the hot end temperature of the cooling plate 106, and send the detected cold end temperature and hot end temperature to the processor 101, and the processor 101 controls the temperature of the semiconductor laser 105.

[0065] The processor 101 is the control center of the medical endoscope light source host 100. It uses various interfaces and lines to connect various parts of the entire medical endoscope light source host 100. By running or executing software programs stored in the memory and calling data stored in the memory, the processor 101 performs various functions and processes data of the medical endoscope light source host 100. In some embodiments, the processor 101 may include one or more processing units. In this application, the processor 101 can run an operating system, an application program, a user interface display and touch response, and the semiconductor laser temperature control method described in the embodiment of the application. The specific process of the processor 101 executing the semiconductor laser temperature control method will be described in detail below.

[0066] Figure 2 The flowchart of a semiconductor laser temperature control method provided by an embodiment of the present application is shown. The method can be applied to Figure 1 In the medical endoscope light source host shown in FIG. Figure 2 As shown, the method may include the following steps:

[0067] Step S201, respectively obtain the first resistance value of the first temperature sensor and the second resistance value of the second temperature sensor, and use a pre-built temperature calculation model to determine the cold end temperature of the refrigeration plate according to the first resistance value, and determine the hot end temperature of the refrigeration plate according to the second resistance value.

[0068] Among them, the cooling plate can be a thermoelectric cooling plate, and the cold end of the cooling plate is connected to the semiconductor laser to reduce the temperature of the semiconductor laser. Since the cold end of the cooling plate is closely connected to the semiconductor laser, the cold end temperature of the cooling plate can also be understood as the temperature of the semiconductor laser. The hot end of the cooling plate is connected to a heat sink, and the heat sink is used to dissipate heat for the hot end of the cooling plate. For example, the heat sink can be a cooling fan or a condensing fan.

[0069] In an optional embodiment, a thermistor temperature sensor can be used to monitor the cold end temperature and the hot end temperature of the refrigeration plate. The method for monitoring the cold end temperature and the hot end temperature of the refrigeration plate, wherein the thermistor temperature sensor can use a negative temperature coefficient (Negative Temperature Coefficient, NTC) thermistor.

[0070] Taking NTC thermistor as an example, considering that in the prior art, the temperature of NTC thermistor is obtained, a table lookup method is usually used to calculate in advance the temperature value corresponding to the sampled value obtained by the processor (or microcontroller unit (MCU)). If 12-bit sampling is used, 4096 values ​​need to be stored, and the implementation accuracy is low, and the acquisition and calculation speed are slow.

[0071] In the prior art, when calculating the temperature of an NTC thermistor, most of them use a segmented polynomial model, and the specific calculation formula is shown in formula (1):

[0072] f(x)=p1×x 4 +p2×x 3 +p3×x 2 +p4×x+p5(1)

[0073] Where f(x) is the temperature value T, and x is the resistance value R. Take the NTC thermistor model NXFT15XH103FA2B150 as an example:

[0074] The first temperature range is 0~40℃: p1=-3.478*10 -12 ; p2 = 2.393*10 -7 ; p3 = -0.00652; p4 = 69.92, the calculated temperature standard deviation is 1.615 and the root mean square error is 0.2118.

[0075] The second temperature range is 40-80℃: p1=-3.431*10 -10 ; p2 = 5.395*10 -6 ; p3 = -0.03407; p4 = 123.1, the calculated temperature standard deviation is 0.5259 and the root mean square error is 0.1209.

[0076] The third temperature range is 80~120℃: p1=-1.413*10 -8 ; p2 = 6.771*10 -5 ; p3 = -0.1322; p4 = 177.5, the calculated temperature standard deviation is 0.1836, and the root mean square error is 0.07142.

[0077] It can be seen that in the existing NTC temperature calculation method, if the number of terms in the polynomial model is small, the calculation accuracy cannot be guaranteed, and if the number of terms in the polynomial model is large, the calculation amount will increase exponentially, and the calculation efficiency is low, and it is impossible to take into account both the calculation accuracy and the calculation speed.

[0078] In the embodiment of the present application, a temperature calculation model is pre-constructed based on the temperature calculation formula of the NTC thermistor. After respectively obtaining the first resistance value of the first temperature sensor and the second resistance value of the second temperature sensor, the pre-constructed temperature calculation model can be used to determine the cold end temperature of the refrigeration plate according to the first resistance value, and to determine the hot end temperature of the refrigeration plate according to the second resistance value. In this way, both the calculation speed and the calculation accuracy are taken into account, not only the calculation amount is small and the acquisition speed is faster, but also the calculated temperature has higher accuracy than the traditional table lookup method.

[0079] In specific implementation, the temperature calculation formula of the NTC thermistor is shown in the following formula (2):

[0080] R t =R×EXP×(B×(1 / T1-1 / T2))(2)

[0081] Among them, R t is the resistance value of the thermistor at temperature T1, R is the nominal point resistance value of the thermistor at room temperature T2, B value is the material constant (calculated by the zero-power resistance value of T1 and T2), EXP is the nth power of e, T1 and T2 in the above formula refer to K degrees, that is, Kelvin temperature, K degrees = 273.15 (absolute temperature) + Celsius temperature.

[0082] According to the above formula (2), T1 = 1 / (ln(R t / R) / B+1 / T2), according to the logarithmic calculation formula ln(R t / R)=ln(R t )-ln(R), then T1=1 / (ln(R t ) / B-ln(R) / B+1 / T2), and then get the calculation formula (3):

[0083] T1=B / (ln(R t )-ln(R)+B / T2)(3)

[0084] In formula (3), R and T2 are both constants, and B is a constant corresponding to T1 and T2, which is generally calculated by measuring the resistance value of the NTC thermistor at 25°C and 50°C (or 85°C).

[0085] Taking the thermistor model NXFT15XH103FA2B150 as an example, when selecting a thermistor, you can select it according to the value of B (25 / 50). It should be noted that different temperatures correspond to different B values, and only one temperature value can be calculated through the B value. In the temperature range of -40℃ to 125℃, the entire resistance value-temperature relationship curve cannot be calculated through the formula.

[0086] The embodiments of the present application summarize the resistance value (R)-temperature (T) curve within the temperature range of -40°C to 125°C, and can refer to the rules of the single-point temperature calculation formula.

[0087] Substituting a and b for the constants in formula (3), we can get the initial temperature calculation model:

[0088] T= B / (ln(R)+ a + B / b) (4)

[0089] In the temperature range of -40℃~125℃, the B value is constantly changing. It can be replaced by a constant first, and then optimized according to the fitting results to obtain the optimized temperature calculation model: T=a / (ln(R)+b).

[0090] Substitute the values ​​in the resistance value and temperature correspondence table (usually provided by thermistor manufacturers) into the above temperature calculation model, and calculate the model parameters as follows: a = 110.9 (92.87, 128.9), b = -5.565 (-5.742, -5.389). At this time, the optimized temperature calculation model is: T = 110.9 / (ln(R)-5.565). Figure 3 As shown, the relationship curve between temperature and resistance value is curve 30.

[0091] Since the constant a replaces the variable B, the above optimized temperature calculation model cannot correctly express the relationship curve between temperature and resistance value in the temperature range of -40℃~125℃. Figure 3 From the analysis of curve 30 in FIG. 1 , it can be seen that the difference in the y-axis is large, so a compensation constant c is added to the above model to obtain the final temperature calculation model T=a / (ln(R)+b)+c. According to the corresponding relationship table between resistance value and temperature, the least squares method is used to calculate the optimal coefficients a, b, and c.

[0092] In the temperature range of -40℃~125℃, based on the final temperature calculation model: T=a / (ln(R)+b)+c, a=4895, b=4.331, c=-336.5 are calculated, and then the resistance value and temperature relationship model of the thermistor is obtained as T=4895 / (ln(R)+4.331)-336.5. Figure 4 As shown, the relationship curve between temperature and resistance value is curve 40.

[0093] For the above final temperature calculation model, the resistance value is substituted and the standard deviation of the temperature is calculated to be 0.3086. The root mean square error is 0.04351, which has a very high calculation accuracy. The entire calculation process only needs to process one logarithmic operation and one floating point operation, which greatly improves the calculation speed and efficiency.

[0094] It should be noted that, using the pre-built temperature calculation model, determining the cold end temperature of the refrigeration plate and determining the hot end temperature of the refrigeration plate need to be performed simultaneously.

[0095] Step S202, determining the difference between the cold end temperature of the refrigeration fin and the set target temperature.

[0096] The set target temperature may be any temperature within a set temperature range, and the semiconductor laser works within the set temperature range to ensure the stability of its performance. For example, the set temperature range may be 25°C-35°C, and the set target temperature may be 30°C.

[0097] Step S203: determining a first control parameter for the cooling fin and a second control parameter for the heat dissipation device according to the difference and the hot end temperature of the cooling fin.

[0098] In an alternative embodiment, the Figure 5 The method shown determines a first control parameter for a cooling fin and a second control parameter for a heat dissipation device, and the method comprises the following steps:

[0099] Step S501, determining a coordinate point in a control coordinate system with the difference as the horizontal coordinate and the hot end temperature as the vertical coordinate.

[0100] The control coordinate system is preset and stored in the processor cache.

[0101] In some embodiments, the setting method of the control coordinate system is as follows: Figure 6 As shown, the following steps are included:

[0102] Step S5011, establishing an initial coordinate system.

[0103] For example, Figure 7As shown, the initial coordinate system may include a horizontal axis and a vertical axis, wherein the horizontal axis is the difference between the set target temperature and the cold end temperature of the refrigeration plate, and the vertical axis is the hot end temperature of the refrigeration plate.

[0104] Step S5012, dividing the horizontal axis and the vertical axis of the initial coordinate system into multiple segments according to the set coordinate scales, to generate a segmented coordinate system.

[0105] For example, Figure 8 As shown, the coordinate scales set on the horizontal axis include a hysteresis lower limit scale, a hysteresis upper limit scale, a dead zone lower limit scale and a dead zone upper limit scale, and the coordinate scales set on the vertical axis include a normal scale, a limit lower limit scale, a limit upper limit scale and a danger limit scale.

[0106] Step S5013: divide the segmented coordinate system into multiple grids according to the multiple segments of the horizontal axis and the multiple segments of the vertical axis to generate a grid coordinate system.

[0107] For example, Fig. 9 As shown, the grid coordinate system may include multiple grids.

[0108] Step S5014: Generate a control coordinate system based on the grid coordinate system.

[0109] For example, Fig.10 As shown, a corresponding control strategy can be set in each grid in the grid coordinate system to generate a control coordinate system. The control strategy can include a parameter determination strategy for determining a first control parameter of the cooling fin and a second control parameter for the heat dissipation device.

[0110] Among them, the first control parameter is the output voltage of the refrigeration plate, the parameter determination strategy can include a standby control strategy, a start-stop control strategy, a PD control strategy and a PID control strategy, and the second control parameter is the pulse duty cycle of the heat dissipation device.

[0111] Step S502: determine the target grid to which the coordinate point belongs in the control coordinate system.

[0112] With the difference as the horizontal coordinate and the hot end temperature as the vertical coordinate, after the coordinate point is determined in the control coordinate system, the target grid to which the coordinate point belongs in the control coordinate system can be determined.

[0113] Exemplarily, assuming that the hysteresis lower limit is -25°C, the hysteresis upper limit is -20°C, the dead zone lower limit is -15°C, the dead zone upper limit is -10°C, the normal temperature of the hot end is 30°C, the lower limit temperature of the hot end is 40°C, the upper limit temperature of the hot end is 50°C, the dangerous limit temperature of the hot end is 70°C, and the coordinate point is (-30°C, 25°C), then it can be determined that the target grid to which the coordinate point belongs is grid 16.

[0114] Step S503: determining first control parameters for the cooling fins and second control parameters for the heat dissipation device according to the control strategy corresponding to the target grid.

[0115] In an optional embodiment, multiple grids are divided into multiple control areas, which may include a first control area, a second control area, a third control area, a fourth control area, a fifth control area and a sixth control area. Grids belonging to the same control area correspond to the same parameter determination strategy, and grids belonging to different control areas correspond to different parameter determination strategies.

[0116] In some embodiments, if the target grid belongs to the first control area, the parameter determination strategy for determining the first control parameter of the refrigeration plate is a start-stop control strategy, that is, the maximum output voltage corresponding to the hot end temperature at the current moment is used as the output voltage of the refrigeration plate.

[0117] Among them, the maximum output voltage corresponding to the hot end temperature can be derived based on experimental induction and stored in the cache of the processor.

[0118] The following is an example of the maximum output voltage corresponding to the hot end temperature when the target temperature is set to 30°C and the hot end temperature is 50°C. When the hot end temperature is 50°C, the relationship between the output power and current at different temperature differences between the set target temperature and the hot end temperature is as follows: Fig.11 As shown. The output power corresponding to the maximum cooling capacity of the cooling plate is 20W. It can be determined that when the hot end is 50℃, the set target temperature and the hot end temperature are at a temperature difference of 20℃, and the current corresponding to the output power of 20W corresponding to the maximum cooling capacity of the cooling plate is 2A. The corresponding relationship between the current and voltage of the cooling plate under different temperature differences is as follows: Fig.12 As shown, it can be determined that when the current is 2A at a temperature difference of 20°C, the maximum output voltage is 4.8V.

[0119] like Fig.13 As shown, grid 1, grid 2, grid 3, grid 6, grid 11 and grid 16 belong to the first control area. The parameter determination strategy corresponding to the first control area is the start-stop control strategy, that is, the maximum output voltage corresponding to the current hot end temperature is used as the output voltage u(k) of the refrigeration plate. For example, the target grid is grid 6, and when the current hot end temperature is 50°C, the output voltage is 4.8V.

[0120] If the target grid is any one of grid 1, grid 2 or grid 3, it means that the hot end temperature of the semiconductor laser is high and has exceeded the upper limit of the hot end temperature, and the semiconductor laser has a more obvious fault. Therefore, the start-stop control strategy can be used to determine the output voltage of the cooling plate, that is, the output voltage corresponding to the current hot end temperature is used to maintain the operation of the semiconductor laser, and the pulse duty cycle of the heat dissipation device is determined to be the maximum pulse duty cycle. While maintaining the operation of the semiconductor laser, an alarm message can be issued to prompt the user that the semiconductor laser has a fault.

[0121] Specifically, if the target grid is any one of grid 1, grid 2 or grid 3, the maximum output voltage Vmax-lc corresponding to the current hot end temperature can be used as the output voltage u(k) of the cooling plate, that is, u(k)=Vmax-lc, to maintain the operation of the semiconductor laser, and the pulse duty cycle Dmax is used as the pulse duty cycle of the heat dissipation device, that is, Cond FAN=Dmax. While maintaining the operation of the semiconductor laser, an alarm message can be issued to prompt the user that the semiconductor laser has a fault.

[0122] If the target grid is any one of grid 6, grid 11 or grid 16, it means that the temperature of the semiconductor laser is significantly different from the preset target temperature at this time, and the control speed should be increased. Therefore, a start-stop control strategy can be used to determine the output voltage of the cooling plate without overshoot, and determine that the pulse duty cycle of the heat dissipation device is a high pulse duty cycle.

[0123] Specifically, if the target grid is grid 6, the maximum output voltage Vmax-lh corresponding to the current hot end temperature can be used as the output voltage u(k) of the cooling plate, that is, u(k)=Vmax-lh, and the pulse duty cycle Dhigh-lh corresponding to grid 6 can be used as the pulse duty cycle of the heat dissipation device, that is, Cond FAN=Dhigh-lh.

[0124] If the target grid is grid 11, the maximum output voltage Vmax-ll corresponding to the current hot end temperature can be used as the output voltage u(k) of the cooling plate, that is, u(k)=Vmax-ll, and the pulse duty cycle Dhigh-ll corresponding to grid 11 can be used as the pulse duty cycle of the heat dissipation device, that is, Cond FAN=Dhigh-ll.

[0125] If the target grid is grid 16, the maximum output voltage Vmax-n corresponding to the current hot end temperature can be used as the output voltage u(k) of the cooling plate, that is, u(k)=Vmax-n, and the pulse duty cycle Dhigh-n corresponding to grid 16 can be used as the pulse duty cycle of the heat dissipation device, that is, Cond FAN=Dhigh-n.

[0126] In some embodiments, Fig.14 As shown, grid 7, grid 12 and grid 17 belong to the second control area. The parameter determination strategy corresponding to the second control area is the PD control strategy. If the target grid is any one of grid 7, grid 12 or grid 17, it means that the temperature of the semiconductor laser is now narrowed from the preset target temperature. While ensuring the control speed, overshoot needs to be prevented. Therefore, PD control can be introduced, that is, the output voltage of the refrigeration plate is determined according to the weighted sum of the difference between the target temperature and the cold end temperature at the current moment, the difference increment and the ratio of the temperature sampling period.

[0127] The difference increment is determined according to the difference between the target temperature and the cold end temperature at the current moment, and the difference between the target temperature and the cold end temperature at the previous moment.

[0128] The voltage in the grid 7 can be determined by equation (5), which can be expressed as:

[0129]

[0130] Among them, k p-lh is the proportionality coefficient, e(k) is the difference between the target temperature and the current cold end temperature, k d-lh is the differential coefficient, e(k)-e(k-1) is the difference increment, T is the sampling period, and k is the sampling sequence number.

[0131] After the voltage corresponding to the grid 7 is determined, the pulse duty ratio Dmid-lh corresponding to the grid 7 can be used as the pulse duty ratio of the heat dissipation device, that is, Cond FAN=Dmid-lh.

[0132] The voltage in the grid 12 can be determined using equation (6), which can be expressed as:

[0133]

[0134] Among them, k p-ll is the proportionality coefficient, e(k) is the difference between the target temperature and the current cold end temperature, k d-ll is the differential coefficient, e(k)-e(k-1) is the difference increment, T is the sampling period, and k is the sampling sequence number.

[0135] After the voltage corresponding to the grid 12 is determined, the pulse duty ratio Dmid-ll corresponding to the grid 12 can be used as the pulse duty ratio of the heat dissipation device, that is, Cond FAN=Dmid-ll.

[0136] The voltage in the grid 17 can be determined by equation (7), which can be expressed as:

[0137]

[0138] Among them, k p-n is the proportionality coefficient, e(k) is the difference between the target temperature and the current cold end temperature, k d-n is the differential coefficient, e(k)-e(k-1) is the difference increment, T is the sampling period, and k is the sampling sequence number.

[0139] After the voltage corresponding to the grid 17 is determined, the pulse duty ratio Dmid-n corresponding to the grid 17 can be used as the pulse duty ratio of the heat dissipation device, that is, Cond FAN=Dmid-n.

[0140] In some embodiments, Fig.15 As shown, grids 8, 13 and 18 belong to the third control zone, and the parameter determination strategy corresponding to the third control zone is the PID control strategy. If the target grid is any one of grids 8, 13 or 18, it means that the temperature of the semiconductor laser is close to the preset target temperature at this time, and the control accuracy needs to be improved. Therefore, PID control can be introduced, that is, the output voltage of the refrigeration plate is determined according to the weighted sum of the difference between the target temperature and the current cold end temperature, the sum of the difference between the target temperature and the cold end temperature at each sampling moment in the temperature sampling period, and the ratio of the difference increment to the temperature sampling period.

[0141] The voltage in the grid 8 can be determined by equation (8), which can be expressed as:

[0142]

[0143] Among them, k p-lh is the proportionality coefficient, e(k) is the difference between the target temperature and the current cold end temperature, k i-lh is the integration coefficient, is the sum of the difference between the target temperature and the cold end temperature at each sampling moment in the temperature sampling period, k d-lh is the differential coefficient, e(k)-e(k-1) is the difference increment, T is the sampling period, and k is the sampling sequence number.

[0144] After the voltage corresponding to the grid 8 is determined, the pulse duty ratio Dlow-lh corresponding to the grid 8 can be used as the pulse duty ratio of the heat dissipation device, that is, Cond FAN=Dlow-lh.

[0145] The voltage in the grid 13 can be determined using equation (9), which can be expressed as:

[0146]

[0147] Among them, k p-ll is the proportionality coefficient, e(k) is the difference between the target temperature and the current cold end temperature, ki-ll is the integration coefficient, is the sum of the difference between the target temperature and the cold end temperature at each sampling moment in the temperature sampling period, k d-ll is the differential coefficient, e(k)-e(k-1) is the difference increment, T is the sampling period, and k is the sampling sequence number.

[0148] After the voltage corresponding to the grid 13 is determined, the pulse duty ratio Dlow-ll corresponding to the grid 13 can be used as the pulse duty ratio of the heat dissipation device, that is, Cond FAN=Dlow-ll.

[0149] The voltage in the grid 18 can be determined using equation (10), which can be expressed as:

[0150]

[0151] Among them, k p-n is the proportionality coefficient, e(k) is the difference between the target temperature and the current cold end temperature, k i-n is the integration coefficient, is the sum of the difference between the target temperature and the cold end temperature at each sampling moment in the temperature sampling period, k d-n is the differential coefficient, e(k)-e(k-1) is the difference increment, T is the sampling period, and k is the sampling sequence number.

[0152] After the voltage corresponding to the grid 18 is determined, the pulse duty ratio Dlow-n corresponding to the grid 18 can be used as the pulse duty ratio of the heat dissipation device, that is, Cond FAN=Dlow-n.

[0153] In some embodiments, Fig.16 As shown, grid 5, grid 10, grid 15 and grid 20 belong to the fourth control area, and the parameter determination strategy corresponding to the fourth control area is the standby control strategy. If the target grid is any one of grid 5, grid 10, grid 15 or grid 20, in order to eliminate the influence of system deviation and prevent the system from frequent operation and large lag, the standby control strategy can be used to determine the output voltage of the refrigeration plate, that is, the set minimum output voltage is used as the output voltage of the refrigeration plate.

[0154] The set minimum output voltage may be 0V.

[0155] Specifically, if the target grid is grid 5, the set minimum output voltage Vmin-lc can be used as the output voltage u(k) of the cooling plate, that is, u(k)=Vmin-lc. And the pulse duty cycle Dmax corresponding to grid 5 is used as the pulse duty cycle of the heat dissipation device, that is, Cond FAN=Dmax.

[0156] If the target grid is grid 10, the set minimum output voltage Vmin-lh can be used as the output voltage u(k) of the cooling plate, that is, u(k)=Vmin-lh. And the pulse duty cycle Dmin-lh corresponding to grid 10 is used as the pulse duty cycle of the heat dissipation device, that is, Cond FAN=Dmin-lh.

[0157] If the target grid is grid 15, the set minimum output voltage Vmin-ll can be used as the output voltage u(k) of the cooling plate, that is, u(k)=Vmin-ll. And the pulse duty cycle Dmin-ll corresponding to grid 15 is used as the pulse duty cycle of the heat dissipation device, that is, Cond FAN=Dmin-ll.

[0158] If the target grid is grid 20, the set minimum output voltage Vmin-n can be used as the output voltage u(k) of the cooling plate, that is, u(k)=Vmin-n. And the pulse duty cycle Dmin-n corresponding to grid 20 is used as the pulse duty cycle of the heat dissipation device, that is, Cond FAN=Dmin-n.

[0159] In some embodiments, Fig.17 As shown, grid 4 is the fifth control area, and the parameter determination strategy corresponding to the fifth control area is: if the output voltage of the refrigeration plate at the previous moment is the set minimum output voltage, the standby control strategy is adopted, otherwise the start-stop control strategy is adopted.

[0160] Specifically, if the output voltage of the cooling plate at the last moment is the set minimum output voltage, the set minimum output voltage Vmin-lc is used as the output voltage u(k) of the cooling plate, that is, u(k)=Vmin-lc. The pulse duty cycle Dmax corresponding to grid 4 is used as the pulse duty cycle of the heat dissipation device, that is, Cond FAN=Dmax.

[0161] If the output voltage of the cooling plate at the last moment is not the set minimum output voltage, the maximum output voltage Vmax-lc corresponding to the current hot end temperature can be used as the output voltage u(k) of the cooling plate, that is, u(k)=Vmax-lc. And the pulse duty cycle Dmax corresponding to grid 4 is used as the pulse duty cycle of the heat dissipation device, that is, Cond FAN=Dmax.

[0162] In some embodiments, Fig.18 As shown, grids 9, 14 and 19 belong to the sixth control zone, and the parameter determination strategy corresponding to the sixth control zone is: if the output voltage of the refrigeration plate at the previous moment is the set minimum output voltage, the standby control strategy is adopted, otherwise the PID control strategy is adopted.

[0163] If the output voltage of the cooling plate at the last moment is the set minimum output voltage, the minimum output voltage is used as the output voltage of the cooling plate.

[0164] Specifically, if the target grid is grid 9, the set minimum output voltage Vmin-lh can be used as the output voltage u(k) of the cooling plate, that is, u(k)=Vmin-lh. And the pulse duty cycle Dmin-lh corresponding to grid 9 is used as the pulse duty cycle of the heat dissipation device, that is, Cond FAN=Dmin-lh.

[0165] If the target grid is grid 14, the set minimum output voltage Vmin-ll can be used as the output voltage u(k) of the cooling plate, that is, u(k)=Vmin-ll. And the pulse duty cycle Dmin-ll corresponding to grid 14 is used as the pulse duty cycle of the heat dissipation device, that is, Cond FAN=Dmin-ll.

[0166] If the target grid is grid 19, the set minimum output voltage Vmin-n can be used as the output voltage u(k) of the cooling plate, that is, u(k)=Vmin-n. And the pulse duty ratio Dmin-n corresponding to grid 19 is used as the pulse duty ratio of the heat dissipation device, that is, Cond FAN=Dmin-n.

[0167] If the output voltage of the refrigeration unit at the previous moment is not the set minimum output voltage, the output voltage of the refrigeration unit can be determined based on the weighted sum of the difference between the target temperature and the current cold end temperature, the sum of the difference between the target temperature and the cold end temperature at each sampling moment in the temperature sampling period, and the ratio of the difference increment to the temperature sampling period.

[0168] Specifically, if the target grid is grid 9, the voltage can be determined according to the above formula (8). After the voltage corresponding to grid 9 is determined, the pulse duty cycle Dlow-lh corresponding to grid 9 can be used as the pulse duty cycle of the heat dissipation device, that is, CondFAN=Dlow-lh.

[0169] If the target grid is grid 14, the voltage can be determined according to the above formula (9). After the voltage corresponding to grid 14 is determined, the pulse duty cycle Dlow-ll corresponding to grid 14 can be used as the pulse duty cycle of the heat dissipation device, that is, Cond FAN = Dlow-ll.

[0170] If the target grid is grid 19, the voltage can be determined according to the above formula (10). After the voltage corresponding to grid 19 is determined, the pulse duty ratio Dlow-n corresponding to grid 19 can be used as the pulse duty ratio of the heat dissipation device, that is, Cond FAN = Dlow-n.

[0171] After the first control parameter and the second control parameter are determined based on step S203, step S204 may be performed.

[0172] Step S204, controlling the cooling plate based on the first control parameter, and controlling the heat dissipation device based on the second control parameter, so that the temperature of the semiconductor laser is within a set temperature range including the target temperature.

[0173] After determining the first control parameter of the refrigeration plate and the second control parameter of the heat sink, the refrigeration plate can be controlled according to the first control parameter, and the heat sink can be controlled according to the second control parameter to make the temperature of the semiconductor laser within a set temperature range including the target temperature.

[0174] Specifically, after determining the output voltage of the cooling plate and the pulse duty cycle of the heat sink, the cooling plate can be controlled according to the determined output voltage, and the heat sink can be controlled according to the determined pulse duty cycle, so that the temperature of the semiconductor laser is within a set temperature range including the target temperature.

[0175] The present application can timely adjust the first control parameter for the cooling plate and the second control parameter for the heat sink based on the hot end temperature of the cooling plate and the difference between the set target temperature and the cold end temperature of the cooling plate. By timely adjusting the first control parameter of the cooling plate and the second control parameter of the heat sink, the instability, uncertainty, time-varying, nonlinearity and hysteresis of the temperature of the semiconductor laser can be adapted to improve the control accuracy. In addition, different operating conditions of the semiconductor laser are divided into different grids for independent control, which can greatly reduce the complexity of program development and facilitate subsequent maintenance.

[0176] Based on the same inventive concept, the present application also provides a semiconductor laser temperature control device, such as Fig.19 As shown, the semiconductor laser temperature control device comprises:

[0177] The data acquisition unit 1901 is used to respectively acquire the first resistance value of the first temperature sensor and the second resistance value of the second temperature sensor, and use a pre-built temperature calculation model to determine the cold end temperature of the refrigeration plate according to the first resistance value, and determine the hot end temperature of the refrigeration plate according to the second resistance value.

[0178] The control unit 1902 is used to determine the difference between the set target temperature and the cold end temperature of the cooling plate, and determine a first control parameter for the cooling plate and a second control parameter for the heat dissipation device according to the difference and the hot end temperature of the cooling plate, respectively, control the cooling plate based on the first control parameter, and control the heat dissipation device based on the second control parameter, so that the temperature of the semiconductor laser is within the set temperature range including the target temperature.

[0179] An embodiment of the present application further provides a computer storage medium, in which computer executable instructions are stored. The computer executable instructions are used to implement the semiconductor laser temperature control method described in any embodiment of the present application.

[0180] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented in one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that include computer-usable program code.

[0181] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0182] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0183] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0184] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A medical endoscope light source host, characterized in that: The medical endoscope light source host comprises a semiconductor laser, a cooling plate, a first temperature sensor, a second temperature sensor, a heat sink and a processor; the cold end of the cooling plate is connected to the semiconductor laser, and the hot end of the cooling plate is connected to the heat sink; the first temperature sensor is connected to the cold end of the cooling plate; and the second temperature sensor is connected to the hot end of the cooling plate; The first temperature sensor is used to monitor the cold end temperature of the refrigeration plate; the second temperature sensor is used to monitor the hot end temperature of the refrigeration plate; The processor is configured to: Acquire a first resistance value of the first temperature sensor and a second resistance value of the second temperature sensor respectively, and determine the cold end temperature of the refrigeration plate according to the first resistance value and determine the hot end temperature of the refrigeration plate according to the second resistance value by using a pre-built temperature calculation model; Determine the difference between the set target temperature and the cold end temperature of the refrigeration plate; Determine a first control parameter for the refrigeration fin and a second control parameter for the heat dissipation device according to the difference and the hot end temperature of the refrigeration fin; The cooling fin is controlled based on the first control parameter, and the heat sink is controlled based on the second control parameter so that the temperature of the semiconductor laser is within a set temperature range including the target temperature.

2. The medical endoscope light source host according to claim 1, characterized in that: The processor is specifically configured to: The difference is used as the horizontal coordinate and the hot end temperature is used as the vertical coordinate to determine the coordinate point in the control coordinate system; the horizontal axis and the vertical axis of the control coordinate system are respectively divided into a plurality of segments according to a set coordinate scale, and the plurality of segments of the horizontal axis and the plurality of segments of the vertical axis divide the control coordinate system into a plurality of grids, each grid having a corresponding control strategy; The target grid to which the coordinate point belongs in the control coordinate system is determined, and according to the control strategy corresponding to the target grid, a first control parameter for the cooling fin and a second control parameter for the heat dissipation device are respectively determined.

3. The medical endoscope light source host according to claim 2, characterized in that: The coordinate scales set on the horizontal axis include a hysteresis lower limit scale, a hysteresis upper limit scale, a dead zone lower limit scale and a dead zone upper limit scale, and the coordinate scales set on the vertical axis include a normal scale, a limit lower limit scale, a limit upper limit scale and a danger limit scale.

4. The medical endoscope light source host according to claim 1, characterized in that: The pre-built temperature calculation model is: T=a / (ln(R)+b)+c, where T is the calculated temperature value, R is the acquired resistance value of the temperature sensor, and a, b, and c are all constants.

5. The medical endoscope light source host according to claim 2, characterized in that: The control strategy corresponding to any grid among the plurality of grids includes a parameter determination strategy for determining a first control parameter of the cooling fin and a second control parameter for the heat dissipation device.

6. The medical endoscope light source host according to claim 5, characterized in that: The first control parameter is the output voltage of the cooling plate. The multiple grids are divided into multiple control areas. The grids belonging to the same control area correspond to the same parameter determination strategy, and the grids belonging to different control areas correspond to different parameter determination strategies.

7. The medical endoscope light source host according to claim 5, characterized in that: The second control parameter is a pulse duty cycle of the heat dissipation device.

8. A semiconductor laser temperature control method, applied to a medical endoscope light source host as claimed in any one of claims 1 to 7, characterized in that: The method comprises: Acquire a first resistance value of the first temperature sensor and a second resistance value of the second temperature sensor respectively, and determine the cold end temperature of the refrigeration plate according to the first resistance value and determine the hot end temperature of the refrigeration plate according to the second resistance value by using a pre-built temperature calculation model; Determine the difference between the set target temperature and the cold end temperature of the refrigeration plate; Determine a first control parameter for the refrigeration fin and a second control parameter for the heat dissipation device according to the difference and the hot end temperature of the refrigeration fin; The cooling fin is controlled based on the first control parameter, and the heat sink is controlled based on the second control parameter so that the temperature of the semiconductor laser is within a set temperature range including the target temperature.

9. The method according to claim 8, characterized in that The determining, according to the difference and the hot end temperature of the refrigeration plate, a first control parameter for the refrigeration plate and a second control parameter for the heat dissipation device respectively comprises: The difference is used as the horizontal coordinate and the hot end temperature is used as the vertical coordinate to determine the coordinate point in the control coordinate system; the horizontal axis and the vertical axis of the control coordinate system are respectively divided into a plurality of segments according to a set coordinate scale, and the plurality of segments of the horizontal axis and the plurality of segments of the vertical axis divide the control coordinate system into a plurality of grids, each grid having a corresponding control strategy; The target grid to which the coordinate point belongs in the control coordinate system is determined, and according to the control strategy corresponding to the target grid, a first control parameter for the cooling fin and a second control parameter for the heat dissipation device are respectively determined.

10. A computer-readable storage medium, wherein a computer program is stored in the computer-readable storage medium, characterized in that: When the computer program is executed by a processor, the method described in claims 8 to 9 is implemented.

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