High-selectivity broadband lumped GaAs radio frequency filter chip for 6G satellite communication internet
By using GaAs substrate, MIM plate capacitor and thin-film IPD spiral inductor in the GaAs RF filter chip of 6G satellite communication Internet, combined with a comprehensive design method, it is solved that the bandpass filter in the prior art is difficult to take into account when the high selective broadband lumped is combined in the existing technology. The problems of miniaturization, low loss and high stopband rejection achieve high integration and miniaturization circuit performance.
Patent Information
- Application Number
- CN202411443695.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-16
- Publication Date
- 2025-02-14
AI Technical Summary
When existing bandpass filters achieve high selective broadband lumping, it is difficult to take into account miniaturization, low loss and high stopband rejection, resulting in increased circuit size and increased insertion loss.
A high-selective broadband lumped GaAs RF filter chip for 6G satellite communication Internet is designed, using GaAs substrate and MIM plate capacitors, combined with spiral inductors processed by thin-film IPD technology, and high integration of circuits is achieved through a comprehensive design method. and miniaturize.
The volume reduction of inductors and capacitors is achieved, the overall circuit is miniaturized, the performance and replicability of the circuit are improved, and the selection and broadband lumped capability are high.
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Figure CN119448960A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of chip technology, and in particular to a highly selective broadband lumped GaAs radio frequency filter chip for 6G satellite communication Internet. Background Art
[0002] Satellite communication is the communication between two or more earth stations using artificial earth satellites as relay stations. Based on satellite communication, satellite Internet has gradually developed, which forms a large-scale network by launching a certain number of satellites to provide communication services such as broadband Internet access to ground and air terminals. Satellite Internet is an information service system that integrates satellite communication network and Internet, and can realize global, global and all-weather Internet services. Mobile communication systems have been developing continuously in technology decade after decade.
[0003] At the same time, with the rapid development of satellite communication technology, communication systems are developing in the direction of high performance, high reliability and miniaturization, which puts forward higher requirements on the performance, reliability and size of filters. Bandpass filters are one of the important components in wireless communication systems. In order to achieve better communication quality, bandpass filters are required to have lower in-band loss and higher stopband suppression, thereby improving communication capacity and avoiding interference between adjacent channels. In order to obtain steep attenuation edges and better stopband characteristics, the order of the filter needs to be increased, but this will further increase the circuit size and introduce more insertion loss in the passband. At present, the miniaturization technology of bandpass filters mainly achieves the miniaturization of filters by adopting new process methods. IPD technology adopts a variety of advanced semiconductor processing technologies, such as photolithography, thin film deposition and etching processes, so that the processed devices have higher process accuracy at the micron level, and while ensuring high circuit integration, there is still low mutual interference. Summary of the invention
[0004] Purpose of the invention: The technical problem to be solved by the present invention is to provide a highly selective broadband lumped GaAs RF filter chip for 6G satellite communication Internet in view of the shortcomings of the prior art.
[0005] Technical solution: In order to solve the above technical problems, the present invention discloses a high-selectivity broadband lumped GaAs radio frequency filter chip for 6G satellite communication Internet, the chip comprising a GaAs substrate (12), a grounding metal layer (13), and a lumped GaAs radio frequency filter circuit located on the upper layer of the GaAs substrate (12), wherein the grounding metal layer (13) is located on the lower layer of the GaAs substrate (12); the lumped GaAs radio frequency filter circuit comprises an input port (1), an output port (2), and a filter resonant network located between the input port (1) and the output port (2), and two ends of the filter resonant network are respectively connected to the input port (1) and the output port (2) through microstrip connecting lines; the input port (1) and the output port (2) are both ground-signal-ground (GSG) structures, and are respectively arranged on both sides of the GaAs substrate (12); the filter resonant network is connected to the grounding metal layer (13) through a grounding column (11) penetrating the GaAs substrate (12).
[0006] Furthermore, the filtering resonant network comprises a first resonator, a second resonator and a third resonator, wherein the first resonator is composed of a first inductor (3) and a first capacitor (4), and the first inductor (3) and the first capacitor (4) are connected in parallel; one end of the first inductor (3) and the first capacitor (4) in parallel is connected through a microstrip connecting line to serve as an input port of the first resonator; the other end of the first inductor (3) and the first capacitor (4) in parallel is connected through a microstrip connecting line to serve as an output port of the first resonator;
[0007] The second resonator is composed of a second inductor (5) and a second capacitor (6), and the second inductor (5) and the second capacitor (6) are connected in parallel, one end of the second inductor (5) and the second capacitor (6) being connected in parallel is connected through a microstrip connecting line, serving as an input port of the second resonator; and the other end of the second inductor (5) and the second capacitor (6) being connected in parallel is connected through a microstrip connecting line, serving as an output port of the second resonator;
[0008] The third resonator is composed of a third inductor (7) and a third capacitor (8), the third inductor (7) and the third capacitor (8) are connected in series, one end of the third inductor (7) is connected to one end of the third capacitor (8), the other end of the third capacitor (8) serves as an input port of the third resonator, and the other end of the third inductor (7) serves as an output port of the third resonator.
[0009] Furthermore, the first resonator and the second resonator are symmetrical about the vertical symmetry axis of the GaAs substrate (12).
[0010] Furthermore, the input port of the first resonator is connected to the circuit input port (1) through a microstrip connection line, and the output port is connected to the grounding column (11) through a coupling inductor (9), thereby realizing inductive coupling to the ground; the output port of the second resonator is connected to the circuit output port (2) through a microstrip connection line, and the input port is connected to the grounding column (11) through a first coupling capacitor (10), thereby realizing capacitive coupling to the ground; the input port of the third resonator is connected to the circuit input port (1) through a microstrip connection line, and the output port is connected to the circuit output port (2) through a microstrip connection line; the first resonator and the second resonator are located on one side of the third resonator, and the second coupling capacitor (14) is located on the other side of the third resonator; one end of the second coupling capacitor (14) is connected to the circuit input port (1) through a microstrip connection line, and the other end is connected to the circuit output port (2) through a microstrip connection line, thereby realizing source-load capacitive coupling.
[0011] Furthermore, the topological structure of the entire circuit is symmetrical about the vertical symmetry axis of the GaAs substrate (12).
[0012] Beneficial effects: Compared with the prior art, the technical solution of the present invention has the following beneficial technical effects:
[0013] (1) The present invention provides a highly selective broadband lumped GaAs radio frequency filter chip for 6G satellite communication Internet, wherein the capacitors are all MIM planar capacitors, and the inductors are spiral inductors obtained by thin-film IPD technology, both of which have high integration, reduce the volume of the inductors and capacitors, and also reduce the volume of the overall circuit, thereby realizing miniaturization of the circuit.
[0014] (2) This circuit is a chip designed using a comprehensive design method, which has high reproducibility and can more easily use the comprehensive design method to obtain circuits with other values. In addition, the circuit chip size is small, the thickness is thin, and the circuit performance is good. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments, so as to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, and the advantages and implementation methods of the present invention will be more obvious. The contents of the accompanying drawings are only used to illustrate and explain the present invention, but will not constitute any limitation to the present invention in any sense. In the accompanying drawings:
[0016] Figure 1 It is a three-dimensional structural schematic diagram of a highly selective broadband lumped GaAs radio frequency filter chip for 6G satellite communication Internet according to the present invention.
[0017] Figure 2 It is an equivalent circuit diagram of a highly selective broadband lumped GaAs radio frequency filter chip for 6G satellite communication Internet according to the present invention.
[0018] Figure 3 It is an S parameter curve diagram of the simulation and test processing of a highly selective broadband lumped GaAs radio frequency filter chip for 6G satellite communication Internet according to the present invention. DETAILED DESCRIPTION
[0019] The embodiments of the present invention will be described below in conjunction with the accompanying drawings. The implementation modes shown in the accompanying drawings are only exemplary performances and are intended to explain the principles of the present invention, but are not intended to limit the scope of the present invention.
[0020] like Figure 1 As shown, the present invention discloses a high-selectivity broadband lumped GaAs radio frequency filter chip for 6G satellite communication Internet, the chip comprising a GaAs substrate (12), a grounding metal layer (13), and a lumped GaAs radio frequency filter circuit located on the upper layer of the GaAs substrate (12), wherein the grounding metal layer (13) is located on the lower layer of the GaAs substrate (12); the lumped GaAs radio frequency filter circuit comprises an input port (1), an output port (2), and a filter resonant network located between the input port (1) and the output port (2), and both ends of the filter resonant network are connected to the input port (1) and the output port (2) via microstrip connecting lines; the input port (1) and the output port (2) are both ground-signal-ground (GSG) structures, and are respectively arranged on both sides of the GaAs substrate (12); the filter resonant network penetrates the GaAs substrate (12) via a grounding column (11) and is connected to the grounding metal layer (13).
[0021] Furthermore, the filtering resonant network comprises a first resonator, a second resonator and a third resonator, wherein the first resonator is composed of a first inductor (3) and a first capacitor (4), and the first inductor (3) and the first capacitor (4) are connected in parallel; one end of the first inductor (3) and the first capacitor (4) in parallel is connected through a microstrip connecting line to serve as an input port of the first resonator; the other end of the first inductor (3) and the first capacitor (4) in parallel is connected through a microstrip connecting line to serve as an output port of the first resonator;
[0022] The second resonator is composed of a second inductor (5) and a second capacitor (6), and the second inductor (5) and the second capacitor (6) are connected in parallel, one end of the second inductor (5) and the second capacitor (6) being connected in parallel is connected through a microstrip connecting line, serving as an input port of the second resonator; and the other end of the second inductor (5) and the second capacitor (6) being connected in parallel is connected through a microstrip connecting line, serving as an output port of the second resonator;
[0023] The third resonator is composed of a third inductor (7) and a third capacitor (8), the third inductor (7) and the third capacitor (8) are connected in series, one end of the third inductor (7) is connected to one end of the third capacitor (8), the other end of the third capacitor (8) serves as an input port of the third resonator, and the other end of the third inductor (7) serves as an output port of the third resonator.
[0024] Furthermore, the first resonator and the second resonator are symmetrical about the vertical symmetry axis of the GaAs substrate (12).
[0025] Furthermore, the input port of the first resonator is connected to the circuit input port (1) through a microstrip connection line, and the output port is connected to the grounding column (11) through a coupling inductor (9), thereby realizing inductive coupling to the ground; the output port of the second resonator is connected to the circuit output port (2) through a microstrip connection line, and the input port is connected to the grounding column (11) through a first coupling capacitor (10), thereby realizing capacitive coupling to the ground; the input port of the third resonator is connected to the circuit input port (1) through a microstrip connection line, and the output port is connected to the circuit output port (2) through a microstrip connection line; the first resonator and the second resonator are located on one side of the third resonator, and the second coupling capacitor (14) is located on the other side of the third resonator; one end of the second coupling capacitor (14) is connected to the circuit input port (1) through a microstrip connection line, and the other end is connected to the circuit output port (2) through a microstrip connection line, thereby realizing source-load capacitive coupling.
[0026] Furthermore, the topological structure of the entire circuit is symmetrical about the vertical symmetry axis of the GaAs substrate (12).
[0027] Furthermore, if Figure 2 As shown, the capacitors in the circuit of the present invention are all MIM flat capacitors, which have high integration and reduce the volume of the capacitors. The capacitors in the example of the present invention include a first capacitor C3 (4), a second capacitor C4 (6), a third capacitor C2 (8), a first coupling capacitor C5 (10), and a second coupling capacitor C1 (14). The specific parameter settings of each capacitor are shown in Table 1.
[0028] Table 1
[0029]
[0030] Furthermore, if Figure 2 As shown, the inductors in the circuit of the present invention all adopt multi-layer IPD spiral inductors, which have high integration and reduce the volume of the inductors. The inductors in the example of the present invention include a first inductor L1 (3), a second inductor L2 (5), a third inductor L3 (7), and a first coupled inductor L4 (9). The specific parameter settings of each spiral inductor are shown in Table 2.
[0031] Table 2
[0032]
[0033] Furthermore, the scattering curve simulation results and test results of the highly selective broadband lumped GaAs RF filter chip for 6G satellite communication Internet are as follows: Figure 3 As shown, the scattering curve results of the actual processing test of the present invention are as follows: its center frequency is 3.8 GHz, bandwidth is 1.8 GHz, passband is 2.9-4.7 GHz, return loss in its passband is <14.8 dB, and three zero points are added outside the band to increase frequency selectivity, thereby achieving the overall filtering effect of the circuit.
[0034] Each embodiment in this specification is described in a related manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. For related parts, refer to the partial description of the chip embodiment.
[0035] The above description is only a preferred embodiment of the present invention and is not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.
Claims
1. A highly selective broadband lumped GaAs RF filter chip for 6G satellite communication Internet, characterized in that: The chip comprises a GaAs substrate (12), a grounding metal layer (13), and a lumped GaAs radio frequency filter circuit located on the upper layer of the GaAs substrate (12), wherein the grounding metal layer (13) is located on the lower layer of the GaAs substrate (12); the lumped GaAs radio frequency filter circuit comprises an input port (1), an output port (2), and a filter resonance network located between the input port (1) and the output port (2), and two ends of the filter resonance network are respectively connected to the input port (1) and the output port (2) via microstrip connecting lines; the input port (1) and the output port (2) are both ground-signal-ground (GSG) structures, and are respectively arranged on both sides of the GaAs substrate (12); the filter resonance network is connected to the grounding metal layer (13) via a grounding column (11) penetrating the GaAs substrate (12).
2. A highly selective broadband lumped GaAs radio frequency filter chip for 6G satellite communication Internet according to claim 1, characterized in that: The filter resonant network comprises a first resonator, a second resonator and a third resonator, wherein the first resonator is composed of a first inductor (3) and a first capacitor (4), and the first inductor (3) and the first capacitor (4) are connected in parallel; one end of the first inductor (3) and the first capacitor (4) in parallel is connected through a microstrip connecting line, serving as an input port of the first resonator; and the other end of the first inductor (3) and the first capacitor (4) in parallel is connected through a microstrip connecting line, serving as an output port of the first resonator; The second resonator is composed of a second inductor (5) and a second capacitor (6), and the second inductor (5) and the second capacitor (6) are connected in parallel, and one end of the second inductor (5) and the second capacitor (6) in parallel is connected through a microstrip connecting line to serve as an input port of the second resonator; The other end of the second inductor (5) and the second capacitor (6) connected in parallel is connected via a microstrip connecting line to serve as an output port of the second resonator; The third resonator is composed of a third inductor (7) and a third capacitor (8), the third inductor (7) and the third capacitor (8) are connected in series, one end of the third inductor (7) is connected to one end of the third capacitor (8), the other end of the third capacitor (8) serves as an input port of the third resonator, and the other end of the third inductor (7) serves as an output port of the third resonator.
3. A highly selective broadband lumped GaAs radio frequency filter chip for 6G satellite communication Internet according to claim 2, characterized in that: The first resonator and the second resonator are symmetrical with respect to the vertical symmetry axis of the GaAs substrate (12).
4. A highly selective broadband lumped GaAs RF filter chip for 6G satellite communication Internet according to claim 2 or 3, characterized in that: The input port of the first resonator is connected to the circuit input port (1) through a microstrip connection line, and the output port is connected to the grounding column (11) through a coupling inductor (9), so as to achieve inductive coupling to the ground; the output port of the second resonator is connected to the circuit output port (2) through a microstrip connection line, and the input port is connected to the grounding column (11) through a first coupling capacitor (10), so as to achieve capacitive coupling to the ground; the input port of the third resonator is connected to the circuit input port (1) through a microstrip connection line, and the output port is connected to the circuit output port (2) through a microstrip connection line; the first resonator and the second resonator are located on one side of the third resonator, and the second coupling capacitor (14) is located on the other side of the third resonator; one end of the second coupling capacitor (14) is connected to the circuit input port (1) through a microstrip connection line, and the other end is connected to the circuit output port (2) through a microstrip connection line, so as to achieve source-load capacitive coupling.
5. A highly selective broadband lumped GaAs radio frequency filter chip for 6G satellite communication Internet according to claim 2 or 3, characterized in that: The topological structure of the entire circuit is symmetrical about the vertical symmetry axis of the GaAs substrate (12).