Display panel, display device and manufacturing method of display panel

Abstract

The invention relates to a display panel which comprises a plurality of island areas, connecting areas are arranged between the adjacent island areas, the connecting areas are provided with connecting lines, the connecting lines are used for achieving signal communication between the adjacent island areas, and the connecting lines are made of nickel-titanium alloy. The invention further relates to a display device and a manufacturing method of the display panel. The connecting line located in the connecting area is made of the nickel-titanium alloy, the nickel-titanium alloy has the phase change characteristic and shows excellent hyperelasticity, and the connecting line is made of the nickel-titanium alloy material, so that the stretchable rate of the device can be remarkably improved, and the mechanical stability of the device can be greatly improved.

Description

Technical Field

[0001] The present invention relates to the technical field of display product manufacturing, and in particular to a display panel, a display device and a manufacturing method of a display panel. Background Art

[0002] Flexible display has been a research hotspot in recent years. With the mass production of foldable mobile phones, people have begun to study the upgraded version of foldable display, namely stretchable display. The most popular design scheme is the island-bridge structure, that is, the display area is on the "island" and the connecting wire is made on the "bridge" (quotation marks omitted later). In response to the core issues of stretchability, mechanical stability and display quality of stretchable display, researchers have studied the shape design and material selection scheme of stretchable wires (connecting bridges) between light-emitting units. However, the bridge is generally made on a flexible substrate (such as PI, etc.), and the stretchability of PI itself is only about 5%, which affects the final stretchability of the display device. In addition, the connecting wire material is mainly composed of metal materials with good ductility (such as Cu). Although these metal materials can show good ductility, they also produce irreversible plastic deformation during the stretching process. After the external force is removed, the connecting bridge cannot return to its original size, causing the display screen to be deformed. Therefore, the above problems seriously limit the development and application of stretchable display devices. Summary of the invention

[0003] In order to solve the above technical problems, the present invention provides a display panel, a display device and a method for manufacturing a display panel, which solve the problem that after being stretched and deformed, the connection area cannot return to its original state, resulting in a deformed display screen.

[0004] In order to achieve the above-mentioned purpose, the technical solution adopted in an embodiment of the present invention is: a display panel, including multiple island areas, connecting areas are arranged between adjacent island areas, connecting lines are arranged in the connecting areas, and the connecting lines are used to realize signal connection between adjacent island areas. The material of the connecting lines is nickel-titanium alloy.

[0005] Optionally, the connecting line is curved.

[0006] Optionally, the island area includes a driving function layer and a display device arranged on the driving function layer, and the connecting line is respectively connected to the driving function layers of two adjacent island areas.

[0007] Optionally, the driving function layer includes a first gate electrode, a first insulating layer, a semiconductor layer, a second insulating layer, a second gate electrode, an interlayer insulating layer and a source and drain electrode which are stacked in sequence.

[0008] Optionally, the display panel includes a stretchable substrate, and a material of the stretchable substrate is polyimide.

[0009] An embodiment of the present invention further provides a display device, comprising the above-mentioned display panel.

[0010] An embodiment of the present invention further provides a method for manufacturing a display panel, which is used to manufacture the above-mentioned display panel. The manufacturing method includes:

[0011] Providing a rigid substrate, the rigid substrate comprising a plurality of island areas, a connecting area and a blank area, wherein the connecting area and the blank area are arranged between two adjacent island areas;

[0012] A driving function layer is prepared on one side of the rigid substrate, wherein the driving function layer includes a first gate electrode, a first insulating layer, a semiconductor layer, a second insulating layer, a second gate electrode, an interlayer insulating layer, and a source and drain electrode;

[0013] forming a first insulating protection layer on the driving function layer;

[0014] Etching a plurality of functional layers including the first insulating protection layer to expose the rigid substrate located in the connection area and the blank area;

[0015] preparing a seed layer by whole layer, wherein the seed layer covers the island area, the connection area and the blank area;

[0016] forming an electroplating barrier on a first portion of the seed layer located in the island region;

[0017] forming a sacrificial layer on the second portion of the seed layer located in the connection area and the blank area by electroplating;

[0018] removing the electroplating retaining wall and the first portion of the seed layer located on the island area;

[0019] preparing a second insulating protective layer, and performing patterning on the second insulating protective layer;

[0020] A nickel-titanium metal layer is formed on a side of the second insulating protective layer away from the rigid substrate, and a connecting line located in the connecting area and a connecting electrode for binding and connecting with a display device are formed;

[0021] Bind display device;

[0022] The rigid substrate is replaced with a stretchable substrate.

[0023] Optionally, before the rigid substrate is provided with the driving function, the method further comprises:

[0024] forming a flexible material layer on the rigid substrate;

[0025] A barrier layer is formed on a side of the flexible material layer away from the rigid substrate.

[0026] Optionally, a connection line located in the connection area is formed on a side of the second insulating protection layer away from the rigid substrate, and after this step, the step further includes:

[0027] forming a third insulating protective layer;

[0028] removing the sacrificial layer and the second portion of the seed layer located in the blank area and the connection area;

[0029] The third insulating protection layer is patterned to expose the connecting electrode.

[0030] Optionally, after the step of binding the display device, the method further includes:

[0031] A packaging protection layer is coated around the display device.

[0032] Optionally, the step of replacing the rigid substrate with a stretchable substrate comprises:

[0033] A protective film layer is attached to a side of the display device away from the rigid substrate;

[0034] replacing the rigid substrate with a stretchable substrate;

[0035] The protective film layer is removed.

[0036] Optionally, the step of replacing the rigid substrate with a stretchable substrate comprises:

[0037] Continuously applying a pulling force from the center of the stretchable substrate outward to the stretchable substrate in a direction parallel to the stretchable substrate;

[0038] Separating the portion located on the rigid substrate from the rigid substrate, and attaching the portion located on the rigid substrate to the stretchable substrate that is continuously stressed;

[0039] The tension on the stretchable substrate is released, so that the stretchable substrate recovers to its original shape and the connection line located in the connection area is bent.

[0040] The beneficial effect of the present invention is that the connecting wire located in the connecting area is made of nickel-titanium alloy, which has phase change characteristics and exhibits excellent superelasticity. The material of the connecting wire is nickel-titanium alloy, which can not only significantly improve the stretchability of the device, but also greatly improve the mechanical stability of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 Schematic diagram showing strain of NiTi alloy;

[0042] Figure 2 Schematic diagram showing strain of NiTi alloy;

[0043] Figure 3 A schematic diagram showing a display panel in an embodiment of the present invention;

[0044] Figure 4 A schematic diagram showing a display panel in an embodiment of the present invention;

[0045] Figure 5 A schematic diagram showing the preparation of a first gate electrode, a semiconductor layer and a second gate electrode in a driving function layer;

[0046] Figure 6 A schematic diagram showing the formation of an interlayer insulating layer;

[0047] Figure 7 A schematic diagram showing the formation of source and drain electrodes and a first insulating protection layer;

[0048] Figure 8 A schematic diagram showing the formation of a seed layer;

[0049] Fig. 9 A schematic diagram showing the formation of an electroplating retaining wall and a sacrificial layer;

[0050] Fig.10 A schematic diagram showing the removal of the electroplating retaining wall;

[0051] Fig.11 A schematic diagram showing the formation of a second insulating protective layer;

[0052] Fig.12 A schematic diagram showing a process after a seed layer is formed on the second insulating protection layer;

[0053] Fig.13 A schematic diagram showing the formation of an electroplating retaining wall;

[0054] Fig.14 A schematic diagram showing the formation of connection lines;

[0055] Fig.15 A schematic diagram showing the formation of a third insulating protection layer;

[0056] Fig.16 A schematic diagram showing the removal of the sacrificial layer;

[0057] Fig.17 A schematic diagram showing the binding of display devices;

[0058] Fig.18 A schematic diagram showing a protective film layer attached to a display device. DETAILED DESCRIPTION

[0059] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0060] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, similar words such as "one", "one" or "the" do not indicate quantity restrictions, but indicate that there is at least one. Similar words such as "include" or "comprise" mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Similar words such as "connect" or "connected" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0061] The features such as "parallel", "perpendicular", and "same" used in the embodiments of the present disclosure include the features such as "parallel", "perpendicular", and "same" in a strict sense, as well as the cases where "approximately parallel", "approximately perpendicular", "approximately the same", etc. include certain tolerances, taking into account the tolerances associated with the measurement of specific quantities (e.g., the limitations of the measurement system), and represent the acceptable deviation range for a specific value determined by ordinary technicians in the field. For example, "approximately" can mean within one or more standard deviations, or within 3% or 5% of the value.

[0062] refer to Figure 3-Figure 18 This embodiment provides a display substrate, including a plurality of island regions 1, a connection region is arranged between adjacent island regions 1, a connection line 116 is arranged in the connection region, and the material of the connection line 116 is nickel-titanium alloy.

[0063] NiTi alloy (nickel titanium alloy) material exhibits excellent superelasticity due to its phase change characteristics, such as Figure 1As shown. The so-called superelasticity means that the material undergoes a phase change during the external force loading process, resulting in a large nonlinear deformation (strain can reach ~21%), and a reverse phase change (reversible martensitic phase transformation) occurs during the unloading process, and the material returns to its original size. Therefore, this material can significantly improve the overall stretchability of the stretchable device. In addition, considering that the stretchable device may work in an environment with a large temperature difference, the stretchable device is required to exhibit excellent stretchability at high or low temperatures. However, nickel-titanium alloys have large superelastic properties at both high and low temperatures, such as Figure 2 As shown, this material can also significantly improve the mechanical stability of stretchable devices in environments with large temperature differences.

[0064] In an exemplary embodiment, the display panel includes a display area and a non-display area located outside the display area, wherein the display area is arrayed with a plurality of island areas 1, and the non-display area is distributed with wiring connected to the island area 1. The island area 1 includes a plurality of sub-pixels, such as a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B. The shape of the island area 1 may be rectangular or square, and of course in some other embodiments it may also be other shapes, such as circular, elliptical, and other polygonal shapes.

[0065] In an exemplary embodiment, the connecting wire 116 is in a curved shape, so that it can be gradually unfolded and stretched from a curved state, thereby providing additional wiring length, thereby enabling the display panel to achieve a flat stretched display or a curved stretched display.

[0066] It should be noted that the connection line 116 can be used to achieve signal communication between adjacent islands 1 . For example, the connection line 116 can connect gate lines of adjacent islands 1 , or can connect data lines of adjacent islands 1 .

[0067] In an exemplary embodiment, the island area 1 includes a driving function layer and a display device 111 disposed on the driving function layer, and the connecting line 116 is respectively connected to the driving function layers of two adjacent island areas 1 .

[0068] In an exemplary embodiment, the driving function layer includes a first gate electrode 113 , a first insulating layer 104 , a semiconductor layer 114 , a second insulating layer 105 , a second gate electrode 112 , an interlayer insulating layer 106 , and a source and drain electrode 115 which are sequentially stacked.

[0069] It should be noted that, in this embodiment, the driving function layer includes a dual-gate structure, but is not limited thereto. In other implementations, the driving function layer may also include a top-gate structure or a bottom-gate structure.

[0070] In an exemplary embodiment, the display substrate includes a stretchable substrate 101 , and the material of the stretchable substrate 101 is polyimide.

[0071] In an exemplary embodiment, a flexible material layer 102 is disposed on the stretchable substrate 101, a barrier layer 103 is disposed on a side of the flexible material layer 102 away from the stretchable substrate 101, and the driving function layer is disposed on a side of the barrier layer 103 away from the stretchable substrate 101.

[0072] The material of the flexible material layer 102 may be PI (Polyimide) or PET (polyethylene glycol terephthalate), etc.; the material of the barrier layer 103 is an inorganic material, specifically at least one of silicon nitride and silicon oxide. The barrier layer 103 is used to block external impurities from entering the driving function layer of the island area 1, thereby avoiding the influence of external impurities on the driving function layer.

[0073] An embodiment of the present invention further provides a display device, comprising the above-mentioned display panel.

[0074] The display device also includes components such as a driver chip and a TCON (Timer Control Register, timing controller).

[0075] In practical applications, the display device may be any product or component with display and stretchable functions, such as a mobile phone, a tablet computer, a monitor, a laptop computer, a navigator, a wearable device, or the like.

[0076] An embodiment of the present invention further provides a method for manufacturing a display panel, which is used to manufacture the above-mentioned display panel. The manufacturing method includes:

[0077] S1: providing a rigid substrate 201 , wherein the rigid substrate 201 comprises a plurality of island regions 1 , a connection region and a blank region, wherein the connection region and the blank region are arranged between two adjacent island regions 1 .

[0078] The material of the rigid substrate 201 is a rigid material, and specifically can be any one of quartz, glass, silicon dioxide, and polymethyl methacrylate.

[0079] S2: forming a flexible material layer 102 on the rigid substrate 201; the material of the flexible material layer 102 may be PI (Polyimide) or PET (polyethylene glycol terephthalate), etc.;

[0080] S3: forming a barrier layer 103 on a side of the flexible material layer 102 away from the rigid substrate 201; the barrier layer 103 is made of an inorganic material, specifically at least one of silicon nitride and silicon oxide.

[0081] S4: preparing a driving function layer on one side of the rigid substrate 201 , the driving function layer including a first gate electrode 113 , a first insulating layer 104 , a semiconductor layer 114 , a second insulating layer 105 , a second gate electrode 112 , an interlayer insulating layer 106 and a source and drain electrode 115 .

[0082] Specifically, they include:

[0083] The first gate 113 is formed on the barrier layer 103, specifically, a gate metal layer is first deposited, and then the gate metal layer is patterned to form the first gate 113. The material of the first gate 113 is at least one of copper, molybdenum, titanium or aluminum.

[0084] The first insulating layer 104 is formed on the first gate 113. The first insulating layer 104 is provided as a whole layer, covering the first gate 113 and the rigid substrate 201. The material of the first insulating layer 104 is an inorganic material, specifically, at least one of silicon nitride and silicon oxide.

[0085] The semiconductor layer 114 is formed on the first insulating layer 104, and the orthographic projection of the semiconductor layer 114 on the rigid substrate 201 and the orthographic projection of the first gate 113 on the rigid substrate 201 have an overlapping area; specifically, the semiconductor layer 114 material may be deposited on the first insulating layer 104, and the semiconductor layer 114 material may be patterned to obtain the semiconductor layer 114, and the semiconductor layer 114 corresponds to the first gate 113. The material of the semiconductor layer 114 may be at least one of single crystal silicon, polycrystalline silicon and oxide semiconductor material. The polycrystalline silicon may be obtained by a method of low pressure chemical vapor deposition (LPCVD) or by converting amorphous silicon into polycrystalline silicon by laser melting technology.

[0086] The second insulating layer 105 is formed on the semiconductor layer 114; the second insulating layer 105 covers the semiconductor layer 114 and the first insulating layer 104. The material of the second insulating layer 105 is an inorganic material, specifically, at least one of silicon nitride and silicon oxide.

[0087] The second gate electrode 112 is formed on the second insulating layer 105. Figure 52 is a schematic diagram after forming the second gate, and the orthographic projection of the second gate 112 on the rigid substrate 201 overlaps with the orthographic projection of the semiconductor layer 114 on the rigid substrate 201. Specifically, a gate metal layer is deposited on the second insulating layer 105, and the entire gate metal layer is patterned to obtain the second gate 112. The material of the second gate 112 is at least one of copper, molybdenum, titanium or aluminum.

[0088] The interlayer insulating layer 106 is formed on the second gate 112 ( Figure 6 1 is a schematic diagram after forming an interlayer insulating layer), the interlayer insulating layer 106 covers the second gate 112 and the second insulating layer 105. The material of the interlayer insulating layer 106 is an inorganic material, specifically, at least one of silicon nitride and silicon oxide.

[0089] The source and drain electrodes 115, i.e., source and drain electrodes, are formed on the interlayer insulating layer 106, and the source and drain electrodes are electrically connected to the semiconductor layer 114 through the openings on the interlayer insulating layer 106 and the second insulating layer 105. The material of the source and drain electrodes 115 is at least one of copper, molybdenum, titanium or aluminum.

[0090] After the interlayer insulating layer 106 is prepared, the interlayer insulating layer 106 and the second insulating layer 105 are opened at the positions corresponding to the source electrode and the drain electrode. Then, the source electrode and the drain electrode are prepared on the interlayer insulating layer 106. The source electrode and the drain electrode are electrically connected to the active layer through the openings on the interlayer insulating layer 106 and the second gate insulating layer.

[0091] After the interlayer insulating layer 106 is prepared, portions of the interlayer insulating layer 106 located in the connection area and the blank area, portions of the first insulating layer 104 located in the connection area and the blank area, and portions of the second insulating layer 105 located in the connection area and the blank area are etched to expose portions of the blocking layer 103 located in the connection area and the blank area.

[0092] In some embodiments, when the material of the semiconductor layer 114 is single crystal silicon or polycrystalline silicon, ion implantation can be performed on the contact area of ​​the semiconductor layer 114 before preparing the second insulating layer 105 on the semiconductor layer 114 to reduce the contact resistance between the source electrode, the drain electrode and the semiconductor layer 114.

[0093] S5: forming a first insulating protection layer 107 on the driving function layer, referring to Figure 7The first insulating protective layer 107 may be an inorganic insulating layer, or an organic insulating layer, or may include an inorganic insulating layer and an organic insulating layer stacked together.

[0094] The multiple functional layers including the first insulating protective layer 107 are etched to expose the rigid substrate 201 located in the connection area and the blank area. The first insulating protective layer 107 can be reused as a mask plate to etch the multiple functional layers including the first insulating protective layer 107 (including the barrier layer 103 and the flexible material layer 102) to expose the portion of the rigid substrate 201 located in the connection area and the blank area. When the first insulating protective layer 107 is an organic insulating layer (or when the first insulating protective layer 107 is a multi-layer structure, the film structure of the first insulating protective layer 107 away from the rigid substrate 201 is an organic insulating layer), a separate mask process can be performed to etch the first insulating protective layer 107, the flexible material layer 102 and the barrier layer 103 located in the connection area and the blank area.

[0095] S6: Prepare the seed layer (ref. Figure 8 A first seed layer 202 in the embodiment of the present invention), wherein the seed layer covers the island area 1, the connection area and the blank area;

[0096] S7: forming an electroplating barrier on the first portion of the seed layer located in the island area 1 (refer to Fig. 9 The first electroplating retaining wall 203);

[0097] S8: forming a sacrificial layer 204 by electroplating on the second portion of the seed layer located in the connection area and the blank area; due to the provision of the electroplating retaining wall, the sacrificial layer 204 will only be formed in the area without the electroplating retaining wall. Controlling the electroplating time makes the side of the sacrificial layer away from the rigid substrate 201 flush with the side of the seed layer away from the rigid substrate 201.

[0098] S9: removing the electroplating retaining wall and the first portion of the seed layer located on the island area 1; after removing the electroplating retaining wall, removing the first portion of the seed layer located on the island area 1 by an etching process, and removing a portion of the sacrificial layer, so that the surface of the sacrificial layer is flush with the surface of the first protective insulating layer, and controlling the etching time to minimize the thickness of the sacrificial layer, referring to Fig.10 .

[0099] S10: preparing a second insulating protective layer 108, and patterning the second insulating protective layer 108; the second insulating protective layer 108 may be an inorganic insulating layer, or an organic insulating layer, or may include an inorganic insulating layer and an organic insulating layer stacked together, refer to Fig.11 .

[0100] S11: forming a nickel-titanium metal layer on the side of the second insulating protective layer 108 away from the rigid substrate 201, and forming a connecting line 116 located in the connecting area, and a connecting electrode for binding and connecting with the display device 111, referring to Figure 12-14 ;

[0101] The connecting wire 116 and the connecting electrode can be made by electroplating process, or by vacuum magnetron sputtering (SPUTTER) process. Taking electroplating process as an example, the specific manufacturing method is as follows: prepare the seed layer on the whole surface (refer to Fig.12 The second seed layer 206 in the embodiment of the present invention is used to make a strippable electroplating barrier (refer to Fig.13 The seed layer is energized for electroplating according to the pattern of the second electroplating retaining wall 207 in the image. Due to the existence of the electroplating retaining wall, the electroplating layer (the material of the electroplating layer, i.e., nickel-titanium metal) only grows in the position without the retaining wall. The strippable electroplating retaining wall is removed, and the entire layer is etched by controlling the etching time to remove the seed layer in the position without the electroplating layer.

[0102] S12: Forming a third insulating protection layer 109, referring to Fig.15 The third insulating protective layer 109 covers the connecting wire 116 and the connecting electrode, that is, the third insulating protective layer 109 covers the side of the connecting wire 116 away from the rigid substrate 201, and covers the side of the connecting wire 116, and the third insulating protective layer 109 covers the side of the connecting electrode away from the rigid substrate 201, and covers the side of the connecting electrode; the third insulating protective layer 109 can be an inorganic insulating layer, or an organic insulating layer, or a multilayer structure composed of inorganic insulating layers and organic insulating layers stacked on top of each other.

[0103] S13: removing the sacrificial layer 204 and the second portion of the seed layer (ie, the first seed layer 202 ) located in the blank area and the connection area;

[0104] S14: performing patterning on the third insulating protection layer 109 to expose the connecting electrode. Fig.16 FIG. 1 shows the third insulating protective layer 109 after patterning. Fig.16 The second part of the first seed layer 202 located in the blank area and the connection area is not removed. It should be noted that the order of the steps of patterning the third insulating protection layer 109 and the steps of removing the sacrificial layer 204 and the seed layer (i.e., the first seed layer 202) located in the blank area and the connection area can be adjusted according to actual needs and is not limited.

[0105] S15: Binding the display device 111; the display device 111 may be a Micro-LED (micro light-emitting diode), and the two connecting electrodes are respectively used to connect the P electrode and the N electrode of the micro-light-emitting diode. The display device 111 may also be a display device 111 such as an LED (light-emitting diode) or an OLED (Organic Light-Emitting Diode).

[0106] S16: Coating a packaging protective layer 110 around the display device 111. The packaging protective layer 110 may be made of silica gel. Fig.17 .

[0107] S17: replacing the rigid substrate 201 with the stretchable substrate 101. Specifically, the steps include:

[0108] S171: A protective film layer 211 is attached to the side of the display device 111 away from the rigid substrate 201, referring to Fig.18 ;

[0109] S172: replacing the rigid substrate 201 with a stretchable substrate 101;

[0110] S173: removing the protective film layer to form Figure 3 The display panel shown.

[0111] In an exemplary embodiment, the step of replacing the rigid substrate 201 with the stretchable substrate 101 includes:

[0112] S1701: continuously applying a pulling force from the center of the stretchable substrate 101 outward to the stretchable substrate 101 in a direction parallel to the stretchable substrate 101;

[0113] S1702: separating the portion located on the rigid substrate 201 from the rigid substrate 201, and attaching the portion located on the rigid substrate 201 to the stretchable substrate 101 which is continuously stressed;

[0114] S1703: releasing the tension on the stretchable substrate 101 (this process needs to be released slowly and evenly, and the specific release speed and release time are determined according to actual needs), so that the stretchable substrate 101 returns to its original state, and the connecting line 116 located in the connecting area is bent, forming Figure 4When the stretchable substrate 101 returns to its original state, the length and width / area of ​​the island region 1 remain unchanged, the length of the connecting region becomes shorter, and the connecting line 116 is bent, so that when the substrate is stretched, the connecting line 116 is subjected to very little tension, thereby increasing the overall stretchability.

[0115] There are a few points to note:

[0116] (1) The drawings of the embodiments of the present disclosure only relate to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.

[0117] (2) For the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the thickness of layers or regions is exaggerated or reduced, that is, these drawings are not drawn according to the actual scale. It is understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, the element may be "directly" "on" or "under" the other element or there may be intermediate elements.

[0118] (3) In the absence of conflict, the embodiments of the present disclosure and the features therein may be combined with each other to obtain new embodiments.

[0119] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A display panel, characterized in that: It comprises a plurality of island areas, connecting areas are arranged between adjacent island areas, connecting lines are arranged in the connecting areas, and the connecting lines are used to realize signal connection between adjacent island areas, and the material of the connecting lines is nickel-titanium alloy.

2. The display panel according to claim 1, characterized in that: The connecting line is in a curved shape.

3. The display panel according to claim 1, characterized in that: The island area includes a driving function layer and a display device arranged on the driving function layer, and the connecting wires are respectively connected to the driving function layers of two adjacent island areas.

4. The display panel according to claim 3, characterized in that: The driving function layer includes a first gate electrode, a first insulating layer, a semiconductor layer, a second insulating layer, a second gate electrode, an interlayer insulating layer and a source and drain electrode which are stacked in sequence.

5. The display panel according to claim 1, characterized in that: The display panel includes a stretchable substrate, and the material of the stretchable substrate is polyimide.

6. A display device, characterized in that: A display panel comprising any one of claims 1 to 5.

7. A method for manufacturing a display panel, characterized in that: Used to manufacture the display panel according to any one of claims 1 to 5, the manufacturing method comprising: Providing a rigid substrate, the rigid substrate comprising a plurality of island areas, a connecting area and a blank area, wherein the connecting area and the blank area are arranged between two adjacent island areas; A driving function layer is prepared on one side of the rigid substrate, wherein the driving function layer includes a first gate electrode, a first insulating layer, a semiconductor layer, a second insulating layer, a second gate electrode, an interlayer insulating layer, and a source and drain electrode; forming a first insulating protection layer on the driving function layer; Etching a plurality of functional layers including the first insulating protection layer to expose the rigid substrate located in the connection area and the blank area; preparing a seed layer by whole layer, wherein the seed layer covers the island area, the connection area and the blank area; forming an electroplating barrier on a first portion of the seed layer located in the island region; forming a sacrificial layer on the second portion of the seed layer located in the connection area and the blank area by electroplating; removing the electroplating retaining wall and the first portion of the seed layer located on the island area; preparing a second insulating protective layer, and performing patterning on the second insulating protective layer; A nickel-titanium metal layer is formed on a side of the second insulating protective layer away from the rigid substrate, and a connecting line located in the connecting area and a connecting electrode for binding and connecting with a display device are formed; Bind display device; The rigid substrate is replaced with a stretchable substrate.

8. The method for manufacturing a display panel according to claim 7, characterized in that: Before the rigid substrate is prepared with the driving function, the method further comprises: forming a flexible material layer on the rigid substrate; A barrier layer is formed on a side of the flexible material layer away from the rigid substrate.

9. The method for manufacturing a display panel according to claim 7, characterized in that: A connecting line located in the connecting area is formed on a side of the second insulating protective layer away from the rigid substrate, and the step further includes: forming a third insulating protective layer; removing the sacrificial layer and the second portion of the seed layer located in the blank area and the connection area; The third insulating protection layer is patterned to expose the connecting electrode.

10. The method for manufacturing a display panel according to claim 7, characterized in that: After the step of binding the display device, the following steps are also included: A packaging protection layer is coated around the display device.

11. The method for manufacturing a display panel according to claim 7, characterized in that: The step of replacing the rigid substrate with a stretchable substrate comprises: A protective film layer is attached to a side of the display device away from the rigid substrate; replacing the rigid substrate with a stretchable substrate; The protective film layer is removed.

12. The method for manufacturing a display panel according to claim 7, characterized in that: The step of replacing the rigid substrate with a stretchable substrate comprises: Continuously applying a pulling force from the center of the stretchable substrate outward to the stretchable substrate in a direction parallel to the stretchable substrate; Separating the portion located on the rigid substrate from the rigid substrate, and attaching the portion located on the rigid substrate to the stretchable substrate that is continuously stressed; The tension on the stretchable substrate is released, so that the stretchable substrate recovers to its original shape and the connection line located in the connection area is bent.

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