Display panel, preparation method thereof and display device

Abstract

The invention discloses a display panel, a preparation method thereof and a display device. The display panel comprises a driving substrate and a plurality of light-emitting elements located on one side of the driving substrate. The light-emitting element comprises a light generation layer and a first electrode, and a film layer where the first electrode is located is located on the side, away from the driving substrate, of the light generation layer. The display panel further comprises a plurality of color conversion structures, and a film layer where the color conversion structures are located is located on the side, away from the driving substrate, of the light generation layer. The color conversion structure is overlapped with the first electrode in the direction parallel to the plane where the driving substrate is located, and the color conversion structure is overlapped with the light generation layer in the direction perpendicular to the plane where the driving substrate is located. According to the scheme, the preparation technology difficulty of the display panel can be reduced, the technological process can be simplified, full-color display of the display panel can be achieved through the color conversion structure, the thickness of the display panel cannot be increased excessively through the color conversion structure, and the light and thin requirements of the display panel can be met.

Description

Technical Field

[0001] Embodiments of the present invention relate to the field of display technology, and in particular to a display panel and a manufacturing method thereof, and a display device. Background Art

[0002] Micro-LED (Micro-Light Emitting Diode) display technology refers to the technology of realizing light-emitting display by using a high-density integrated array of tiny light-emitting diodes as pixels on a backplane. Micro LED display technology has attracted attention due to its advantages such as long life and high contrast. Existing Micro LED display panels have problems such as difficult preparation process and complicated process. Summary of the invention

[0003] In view of this, the present invention provides a display panel and a manufacturing method thereof, and a display device, so as to reduce the difficulty of manufacturing the display panel, simplify the manufacturing process, and realize the thinness and lightness of the display panel.

[0004] In a first aspect, an embodiment of the present invention provides a display panel, comprising a driving substrate and a plurality of light-emitting elements located on one side of the driving substrate;

[0005] The light emitting element comprises a light generating layer and a first electrode, wherein the film layer where the first electrode is located is located on a side of the light generating layer away from the driving substrate;

[0006] The display panel also includes a plurality of color conversion structures, wherein the film layer where the color conversion structures are located is located on the side of the light generating layer away from the driving substrate; in a direction parallel to the plane where the driving substrate is located, the color conversion structure overlaps with the first electrode, and in a direction perpendicular to the plane where the driving substrate is located, the color conversion structure overlaps with the light generating layer.

[0007] In a second aspect, an embodiment of the present invention provides a method for preparing a display panel, which is used to prepare the display panel provided by any embodiment of the present invention, and the method for preparing the display panel includes:

[0008] Providing a driving substrate and a transfer substrate; the transfer substrate includes a plurality of light-emitting elements to be transferred;

[0009] After bonding the transfer substrate to the drive substrate, the transfer substrate is peeled off to obtain a plurality of light-emitting elements located on one side of the drive substrate; the light-emitting elements include a light-generating layer and a first electrode, and the film layer where the first electrode is located is located on a side of the light-generating layer away from the drive substrate;

[0010] A plurality of color conversion structures are prepared on a side of the light generating layer away from the driving substrate; the color conversion structure overlaps with the first electrode in a direction parallel to the plane where the driving substrate is located, and overlaps with the light generating layer in a direction perpendicular to the plane where the driving substrate is located.

[0011] In a third aspect, an embodiment of the present invention provides a display device, including the display panel provided by any embodiment of the present invention.

[0012] The display panel provided by the embodiment of the present invention includes a driving substrate and a plurality of light-emitting elements located on one side of the driving substrate; the light-emitting element includes a light-generating layer and a first electrode, and the film layer where the first electrode is located is located on the side of the light-generating layer away from the driving substrate; the display panel also includes a plurality of color conversion structures, and the film layer where the color conversion structure is located is located on the side of the light-generating layer away from the driving substrate; in a direction parallel to the plane where the driving substrate is located, the color conversion structure overlaps with the first electrode, and in a direction perpendicular to the plane where the driving substrate is located, the color conversion structure overlaps with the light-generating layer. Through the above scheme, the difficulty of the preparation process of the display panel can be reduced, the process can be simplified, the existence of the color conversion structure can realize the full-color display of the display panel, and the color conversion structure will not increase the thickness of the display panel too much, which can meet the demand for thin and light display panels. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 A schematic diagram of the structure of a display panel provided by an embodiment of the present invention;

[0014] Figure 2 for Figure 1 A schematic diagram of the enlarged structure at A;

[0015] Figure 3 for Figure 2 Schematic diagram of the cross-sectional structure along B-B';

[0016] Figure 4 A schematic cross-sectional structure diagram of a display panel provided by an embodiment of the present invention;

[0017] Figure 5 A schematic cross-sectional structure diagram of another display panel provided by an embodiment of the present invention;

[0018] Figure 6 A schematic cross-sectional structure diagram of another display panel provided by an embodiment of the present invention;

[0019] Figure 7 A schematic cross-sectional structure diagram of another display panel provided by an embodiment of the present invention;

[0020] Figure 8 A schematic cross-sectional structure diagram of another display panel provided by an embodiment of the present invention;

[0021] Fig. 9 A schematic cross-sectional structure diagram of another display panel provided by an embodiment of the present invention;

[0022] Fig.10 A schematic cross-sectional structure diagram of another display panel provided by an embodiment of the present invention;

[0023] Fig.11 A schematic cross-sectional structure diagram of another display panel provided by an embodiment of the present invention;

[0024] Fig.12 A schematic cross-sectional structure diagram of another display panel provided by an embodiment of the present invention;

[0025] Fig.13 A schematic cross-sectional structure diagram of another display panel provided by an embodiment of the present invention;

[0026] Fig.14 A flow chart of a method for manufacturing a display panel provided by an embodiment of the present invention;

[0027] Fig.15 A flow chart of another method for manufacturing a display panel provided by an embodiment of the present invention;

[0028] Fig.16 for Fig.15 A schematic diagram of the preparation method shown;

[0029] Fig.17 A schematic structural diagram of a display device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0030] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0031] It should be noted that the words “having”, “including”, “comprising”, etc. described in this application are all open-ended meanings, that is, when describing that a module “has”, “including”, or “comprising” a first element, a second element, and / or a third element, it means that the module includes other elements in addition to the first element, the second element, and / or the third element. In addition, ordinal numbers such as “first”, “second”, and “third” in this application are not intended to limit a specific order, but are only used to distinguish various parts.

[0032] At present, the bonding process of Micro LED array and driving substrate generally includes mass transfer technology and direct bonding technology. The mass transfer process is difficult, and the size and spacing of the light-emitting elements are limited by the transfer process, resulting in limited display PPI. Direct bonding refers to bonding the epitaxial structure with the light-emitting element array directly to the driving substrate. This process does not require the step of mass transfer and has a low process difficulty. In the direct bonding process, in order to achieve full-color display of the display panel, the following two schemes are generally adopted. The first is to prepare light-emitting elements of different colors on the same epitaxial substrate to form an epitaxial structure including light-emitting elements of different colors. The growth of the epitaxial structure in this process is relatively complex and the process is difficult. The other is to add a quantum dot color conversion layer on the light-emitting side of the light-emitting element to achieve full-color display through the quantum dot color conversion layer. However, the inventors found that the solution process of the quantum dot color conversion layer in the related art is cumbersome, and the added quantum dot color conversion layer will increase the thickness of the display panel, which is not conducive to the thinness of the display panel.

[0033] Based on the defects of the above-mentioned related technologies, an embodiment of the present invention provides a display panel, which can be a micro light emitting diode display panel such as a Micro-LED display panel. Figure 1 A schematic diagram of the structure of a display panel provided by an embodiment of the present invention, Figure 2 for Figure 1 A schematic diagram of the enlarged structure at A. Figure 3 for Figure 2 Schematic diagram of the cross-section structure along B-B', refer to Figure 1-Figure 3 In an embodiment of the present invention, the display panel includes a driving substrate and a plurality of light-emitting elements 20 located on one side of the driving substrate 10; the light-emitting element 20 includes a light-generating layer 201 and a first electrode 202, and the film layer where the first electrode 202 is located is located on the side of the light-generating layer 201 away from the driving substrate 10; the display panel also includes a plurality of color conversion structures 30, and the film layer where the color conversion structure 30 is located is located on the side of the light-generating layer 201 away from the driving substrate 10; in a direction parallel to the plane where the driving substrate 10 is located, the color conversion structure 30 overlaps with the first electrode 202, and in a direction perpendicular to the plane where the driving substrate 10 is located, the color conversion structure 30 overlaps with the light-generating layer 201.

[0034] like Figure 1-Figure 3 As shown, the driving substrate 10 may include a base substrate and a driving array layer located on one side of the base substrate, the driving array layer includes a plurality of pixel driving circuits, and the pixel driving circuits are electrically connected to the light emitting element 20 to drive the light emitting element 20 to emit light. The driving substrate 10 may include a receiving pad, and the receiving pad is electrically connected to the light emitting element 20. Figure 3 The specific structure of the driving substrate 10 is not shown in the figure, and those skilled in the art can design the arrangement of the pixel driving circuits in the driving substrate 10 according to actual needs.

[0035] The light-emitting element 20 may be a Micro-LED chip, and the light-emitting element 20 includes a light-generating layer 201, which is the light-emitting layer of the light-emitting element 20. The light-generating layer 201 may include a quantum well layer, but is not limited thereto. The light-emitting element 20 may also include a first electrode 202, a second electrode 203, a first semiconductor layer 204, and a second semiconductor layer 205. The second semiconductor layer 205 is located on the side of the light-generating layer 201 facing the drive substrate 10, the first semiconductor layer 204 is located on the side of the light-generating layer 201 facing the film layer where the first electrode 202 is located, the second electrode 203 is located on the side of the second semiconductor layer 205 away from the light-generating layer 201, and the second electrode 203 is bonded to the drive substrate 10.

[0036] like Figure 3 As shown, the first semiconductor layer 204 and the second semiconductor layer 205 are located on both sides of the light generating layer 201 along the thickness direction of the driving substrate 10, the second semiconductor layer 205 is close to the driving substrate 10, and the first semiconductor layer 204 is close to the first electrode 202. The second electrode 203 of the light emitting element 20 is located between the second semiconductor layer 205 and the driving substrate 10 and is bonded to the driving substrate 10 (receiving pad) to achieve electrical connection between the light emitting element 20 and the wiring inside the driving substrate 10. The first electrode 202 of the light emitting element 20 is located on the side of the first semiconductor layer 204 away from the light generating layer 201. One of the first electrode 202 and the second electrode 203 is the anode of the light emitting element 20, and the other is the cathode of the light emitting element 20. The first electrode 202 is in contact with the first semiconductor layer 204, and the second electrode 203 is in contact with the second semiconductor layer 205. Taking the first electrode 202 as the cathode and the second electrode 203 as the anode as an example, the first semiconductor layer 204 can be an n-type semiconductor layer, and the second semiconductor layer 205 can be a p-type semiconductor layer. The first electrode 202 and the second electrode 203 receive electrical signals, electrons enter the light generating layer 201 from the first semiconductor layer 204, and holes enter the light generating layer 201 from the second semiconductor layer 205. The electrons and holes are combined in the light generating layer 201 to realize the light emission of the light emitting element 20.

[0037] Among them, the first semiconductor layer 204, the light generating layer 201 and the second semiconductor layer 205 can be grown on the epitaxial substrate, and the first electrode 202 and the second electrode 203 can be prepared in subsequent processes. In the embodiment of the present invention, the light generating layer 201 of at least some of the light emitting elements 20 is made of the same material, and the light emitting elements 20 with the same light generating layer 201 can be grown on the same epitaxial substrate, and the first semiconductor layer 204 of this part of the light emitting elements 20 can be interconnected to form a whole layer of the first semiconductor layer 204, thereby reducing the difficulty of growing the light emitting element 20. The second electrode 203 of the light emitting element 20 can be an independent electrode structure, and the second electrodes 203 of different light emitting elements 20 are independent of each other, ensuring the independent driving of each light emitting element 20.

[0038] A filling layer 40 may also be included between the light-emitting element 20 and the driving substrate 10. Since there will be a gap between the light-emitting element 20 and the driving substrate 10 after they are bonded, a filling layer 40 may also be provided in the display panel. The filling layer 40 fills the gap between the light-emitting element 20 and the driving substrate 10, thereby achieving planarization and enhancing the fixing strength between the light-emitting element 20 and the driving substrate 10.

[0039] Optionally, in some embodiments, the light emitting element 20 further includes a reflective layer 206, and the reflective layer 206 covers at least a portion of the sidewall of the light emitting element 20, for example Figure 3 As shown, the reflective layer 206 is located between the light emitting element 20 and the filling layer 40. The reflective layer 206 is made of a reflective material. When the light emitted by the light emitting element 20 hits the side wall of the light emitting element 20, it can be reflected by the reflective layer 206, thereby improving the light brightness of the light emitting element 20.

[0040] For further information, please refer to Figure 1-Figure 3 In the embodiment of the present invention, the display panel further includes a color conversion structure 30, which is located on the side of the light generating layer 201 of the light emitting element 20 away from the driving substrate 10, and specifically can be located on the side of the first semiconductor layer 204 away from the driving substrate 10. The color conversion structure 30 can be arranged corresponding to the light generating layer 201 of the light emitting element 20. In the direction perpendicular to the plane where the driving substrate 10 is located, the color conversion structure 30 overlaps with the light generating layer 201, that is, the orthographic projection of the color conversion structure 30 on the plane where the driving substrate 10 is located overlaps with the orthographic projection of the light generating layer 201 on the plane where the driving substrate 10 is located. The color conversion structure 30 can include a color conversion material, so that the light generated by each light generating layer 201 is converted into color by the color conversion structure 30 and then emitted. The light emitting element 20 and the corresponding color conversion structure 30 can form a light emitting unit 50. By arranging color conversion structures 30 of different colors in the display panel, light emitting units 50 of different colors can be formed in the display panel, thereby realizing full-color display of the display panel. In the drawings of the embodiments of the present invention, the X direction represents a direction parallel to the plane where the driving substrate 10 is located, and the Y direction represents a direction perpendicular to the plane where the driving substrate is located.

[0041] In the embodiment of the present invention, the light emitting element 20 and the driving substrate 10 can be prepared by direct bonding, without the need for mass transfer steps, which can reduce the difficulty of the display panel preparation process and simplify the process. The size and spacing of the light emitting element 20 are not limited by the mass transfer process, which is conducive to achieving high PPI and improving the display effect of the display panel.

[0042] It is worth mentioning that, in the embodiment of the present invention, in a direction parallel to the plane where the driving substrate 10 is located (ie Figure 3In the X direction), the color conversion structure 30 overlaps with the first electrode 202. In other words, at least a portion of the color conversion structure 30 and the first electrode 202 are located in the same film layer, or in other words, the color conversion structure 30 and the first electrode 202 are arranged in a direction parallel to the plane where the drive substrate 10 is located. In this arrangement, at least a portion of the color conversion structure 30 is located inside the light emitting element 20 and overlaps with the film layer where the light emitting element 20 is located, which can prevent the color conversion structure 30 from increasing the thickness of the display panel, and is conducive to achieving a thinner display panel.

[0043] The display panel provided by the embodiment of the present invention includes a driving substrate and a plurality of light-emitting elements located on one side of the driving substrate; the light-emitting element includes a light-generating layer and a first electrode, and the film layer where the first electrode is located is located on the side of the light-generating layer away from the driving substrate; the display panel also includes a plurality of color conversion structures, and the film layer where the color conversion structure is located is located on the side of the light-generating layer away from the driving substrate; in a direction parallel to the plane where the driving substrate is located, the color conversion structure overlaps with the first electrode, and in a direction perpendicular to the plane where the driving substrate is located, the color conversion structure overlaps with the light-generating layer. Through the above scheme, the difficulty of the preparation process of the display panel can be reduced, the process can be simplified, the existence of the color conversion structure can realize the full-color display of the display panel, and the color conversion structure will not increase the thickness of the display panel too much, which can meet the demand for thin and light display panels.

[0044] Optional, you can continue to refer to Figure 2 and Figure 3 The display panel includes a first electrode layer 200, which is located on the side of the light generating layer 201 away from the driving substrate 10. The first electrode layer 200 includes a plurality of first electrodes 202 and a plurality of openings 210, and the openings 210 penetrate the first electrode layer 200; in a direction perpendicular to the plane where the driving substrate 10 is located, the openings 210 overlap with the light generating layer 201, and the color conversion structure 30 is at least partially located in the openings 210.

[0045] like Figure 2 and Figure 3 As shown, the first semiconductor layer 204 of the light emitting element 20 may include a first electrode layer 200 on a side away from the light generating layer 201. The first electrode layer 200 includes a plurality of first electrodes 202 and a plurality of openings 210. The openings 210 are arranged along the thickness direction of the driving substrate 10 (i.e., Figure 3 The opening 210 extends in the Y direction as shown in FIG. 1 ) through the first electrode layer 200. In other words, the opening 210 is a hollow area in the first electrode layer 200, and the main body of the first electrode layer 200 is the first electrode 202 of the light-emitting element 20. The orthographic projection of the opening 210 on the plane where the driving substrate 10 is located overlaps with the orthographic projection of the light-generating layer 201 on the plane.

[0046] For example, a whole first electrode layer 200 may be prepared on a side of the first semiconductor layer 204 away from the light generating layer 201, and then the first electrode layer 200 may be patterned to remove at least a portion of the first electrode layer 200 above the light generating layer 201 (away from the driving substrate 10) to form an opening 210. The patterning process may be photolithography or nanoimprinting, etc., which is not limited in the embodiment of the present invention.

[0047] like Figure 2 and Figure 3 As shown, the color conversion structure 30 is at least partially located in the opening 210, and the first electrode 202 surrounding the opening 210 can be used as a limiting wall of the color conversion structure 30. The color conversion structure 30 can be formed by directly filling the opening 210 with a color conversion material. In this way, there is no need to prepare an additional color conversion structure limiting layer, and the preparation process of the color conversion structure 30 can be simplified on the basis of ensuring the position accuracy of the color conversion structure 30.

[0048] It should be noted that when the color conversion structure 30 is located in the opening 210, the bottom of the color conversion structure 30 may contact the first semiconductor layer 204. For a light emitting element 20, the first electrode 202 is a portion of the first electrode layer 200 surrounding the color conversion structure 30 near the opening 210, and the first electrode 202 may contact the first semiconductor layer 204 outside the bottom of the color conversion structure 30 to ensure carrier transmission.

[0049] Optionally, in the embodiment of the present invention, the first electrodes 202 of at least some of the light-emitting elements 20 may be connected to each other, and the first electrodes 202 of at least some of the light-emitting elements 20 receive the same electrical signal. In addition, the first electrode layer 200 further includes a lead-out pad structure 211, and the lead-out pad structure 211 is electrically connected to the first electrode 202. The lead-out pad structure 211 is used to be electrically connected to a signal line in the display panel, so as to transmit the required electrical signal to the first electrode 202.

[0050] Optional, continue to refer to Figure 2 and Figure 3 In some embodiments of the present invention, in a direction perpendicular to the plane where the driving substrate 10 is located, the opening 210 covers the light generating layer 201, so that the color conversion structure 30 covers the light generating layer 201. In this way, the light generated by the light generating layer 201 can basically all enter the color conversion structure 30, thereby improving the color conversion efficiency and the light output brightness of the light emitting unit 50.

[0051] Optional, you can continue to refer to Figure 3 , in a direction perpendicular to the plane where the driving substrate 10 is located, the thickness of the color conversion structure 30 is less than or equal to the depth of the opening 210 .

[0052] like Figure 3As shown, in a direction perpendicular to the plane where the driving substrate 10 is located, the top of the color conversion structure 30 is lower than the first electrode 202 or flush with the first electrode 202. In this way, the color conversion structure 30 is entirely located in the opening 210, and the thickness of the display panel will not be increased.

[0053] Figure 4 A schematic cross-sectional structure diagram of a display panel provided by an embodiment of the present invention, referring to Figure 4 The light-emitting element 20 further includes a first semiconductor layer 204 and a second semiconductor layer 205. The first semiconductor layer 204 is located on the side of the light-generating layer 201 facing the first electrode layer 200, and the second semiconductor layer 205 is located on the side of the light-generating layer 201 facing the driving substrate 10. The side of the first semiconductor layer 204 away from the light-generating layer 201 includes a first groove 2040, and the side wall of the first groove 2040 is connected to the side wall of the opening 210. The color conversion structure 30 is also located in the first groove 2040.

[0054] The positions of the first semiconductor layer 204 and the second semiconductor layer 205 refer to the description in the above embodiment and will not be repeated here. Figure 4 As shown, the side of the first semiconductor layer 204 facing away from the light generating layer 201 is the side of the first semiconductor layer 204 facing the first electrode layer 200. In this embodiment, it is proposed that the surface of the first semiconductor layer 204 facing away from the light generating layer 201 includes a first groove 2040, the first groove 2040 is located below the opening 210 (towards the light generating layer 201), and the side wall of the first groove 2040 is connected to the side wall of the opening 210.

[0055] Taking the photolithography process as an example, when the first electrode layer 200 is patterned to form the opening 210, the etching depth may reach the first semiconductor layer 204, thereby forming a first groove 2040 in the first semiconductor layer 204. At this time, the first groove 2040 and the opening 210 together serve as a receiving groove for the color conversion structure 30, and the color conversion structure 30 is filled in the first groove 2040 and the opening 210. In this way, the thickness of the color conversion structure 30 exceeds the thickness of the first electrode layer 200, and the area of ​​the color conversion structure 30 facing the light generation layer 201 is larger, which is conducive to improving the color conversion efficiency of the color conversion structure 30.

[0056] Figure 5 A cross-sectional structural diagram of another display panel provided by an embodiment of the present invention can be referred to Figure 5The display panel still includes a first electrode layer 200, which is located on the side of the light generating layer 201 away from the driving substrate 10. The first electrode layer 200 includes a plurality of first electrodes 202 and a plurality of second grooves 212. The second grooves 212 extend from the side of the first electrode layer 200 away from the driving substrate 10 to the side close to the driving substrate 10. In a direction perpendicular to the plane where the driving substrate 10 is located, the second grooves 212 overlap with the light generating layer 201, and the color conversion structure 30 is at least partially located in the second grooves 212.

[0057] Figure 5 In the embodiment shown Figure 3 The difference of the illustrated embodiment is that, when patterning the first electrode layer 200, the etching depth can be controlled to be less than the thickness of the first electrode layer 200, so as to form a plurality of second grooves 212 in the first electrode layer 200. The orthographic projection of the second groove 212 on the plane where the driving substrate 10 is located overlaps with the orthographic projection of the light generating layer 201 on the plane, and the second groove 212 serves as a receiving groove for the color conversion structure 30. Under this arrangement, in the direction perpendicular to the plane where the driving substrate 10 is located, part of the first electrode layer 200 is still retained between the color conversion structure 30 and the second semiconductor layer 205. For a light-emitting element 20, the first electrode 202 includes part of the first electrode layer 200 between the color conversion structure 30 and the second semiconductor layer 205 and part of the first electrode layer 200 surrounding the color conversion structure 30. The contact area between the first electrode 202 and the first semiconductor layer 204 is large, which can improve the response speed of the carriers.

[0058] Optional, continue to refer to Figure 5 In a direction perpendicular to the plane where the driving substrate 10 is located, the second groove 212 can cover the light generating layer 201 , so that the color conversion structure 30 covers the light generating layer 201 , thereby improving the color conversion efficiency and the light output brightness of the light emitting unit 50 .

[0059] Optional, you can continue to refer to Figure 2 In the same light-emitting element 20 , the orthographic projection of the first electrode 202 on the plane where the driving substrate 10 is located surrounds the orthographic projection of the color conversion structure 30 on the plane where the driving substrate 10 is located.

[0060] For the same light emitting element 20, its first electrode 202 can surround the color conversion structure 30, thereby increasing the contact area between the first electrode 202 and the first semiconductor layer 204 and ensuring the carrier transmission effect. Figure 2 As shown, the first electrodes 202 of two adjacent light emitting elements 20 may be connected to each other. In other embodiments of the present invention, the first electrodes 202 of two adjacent light emitting elements 20 may be insulated from each other, and the first electrodes 202 of each light emitting element 20 are independently arranged, which is conducive to improving the independent driving effect of the light emitting element 20 and avoiding light crosstalk.

[0061] Optional, you can continue to refer to Figure 3 and Figure 4 In some embodiments, a surface of the color conversion structure 30 facing away from the driving substrate 10 is flush with a surface of the first electrode 202 facing away from the driving substrate 10 .

[0062] When the color conversion structure 30 is prepared, the color conversion material may be filled into the opening 210 or the groove (the second groove 212 ) of the first electrode layer 200 and then cured. Figure 3 and Figure 4 In the illustrated embodiment, when filling the color conversion material, the amount of the color conversion material filled can be controlled so that the cured color conversion structure 30 is flush with the first electrode 202. This improves the flatness of the first electrode layer 200 away from the drive substrate 10, facilitating the preparation of the film layer above the first electrode layer 200.

[0063] When the color conversion structure 30 is located only in the opening 210 of the first electrode layer 200 , the thickness of the color conversion structure 30 is the same as the thickness of the first electrode 202 ; when the color conversion structure 30 is located in the second groove 212 of the first electrode layer 200 , the thickness of the color conversion structure 30 is less than the thickness of the first electrode 202 .

[0064] Figure 6 A cross-sectional structural diagram of another display panel provided in an embodiment of the present invention can be referred to Figure 6 In some other embodiments, the color conversion structure 30 protrudes from the first electrode 202 in a direction away from the driving substrate 10 .

[0065] Figure 6 In the illustrated embodiment, the surface of the color conversion structure 30 facing away from the drive substrate 10 is higher than the surface of the first electrode 202 facing away from the drive substrate 10, and the thickness of the color conversion structure 30 is greater than or equal to the thickness of the first electrode layer 200. In this embodiment, when the color conversion structure 30 is prepared, a mask structure (not shown in the figure) can be placed above the first electrode layer 200, and the mask structure includes a plurality of second openings, and the second openings penetrate the mask structure along the thickness direction of the mask structure. In the direction perpendicular to the plane where the drive substrate 10 is located, the second openings overlap with the first openings 210, and the side walls of the two are connected. Subsequently, the color conversion material is filled in the second openings and the first openings 210 and cured to obtain the color conversion structure 30 protruding from the first electrode 202. Under this arrangement, the thickness of the color conversion structure 30 is relatively large, which is conducive to improving the color conversion efficiency.

[0066] Further optional, continue to refer to Figure 6 , a surface of the color conversion structure 30 on a side away from the driving substrate 10 may be arranged to bulge toward a side away from the driving substrate 10 .

[0067] like Figure 6 As shown, the surface of the color conversion structure 30 on one side facing away from the driving substrate 10 is the light-emitting surface of the color conversion structure 30. As an optional method, the light-emitting surface of the color conversion structure 30 can be set as an arc-shaped convex structure, that is, along the thickness direction of the driving substrate 10, the distance between the middle area of ​​the light-emitting surface of the color conversion structure 30 and the light-emitting element 20 is greater than the distance between the edge area of ​​the light-emitting surface of the color conversion structure 30 and the light-emitting element 20. The color conversion structure 30 is set as an arc-shaped convex structure, so that the color conversion structure 30 is similar to a convex lens structure, which is conducive to converting the light emitted from the light-emitting element 20 from various angles into light emitted perpendicular to the driving substrate 10, thereby improving the brightness of the light emitted from the front viewing angle.

[0068] Optionally, the convex structure of the light-emitting surface of the color conversion structure 30 may be in any shape, such as a hemispherical shape, a polyhedron shape, etc., but is not limited thereto.

[0069] Figure 7 A cross-sectional structural diagram of another display panel provided in an embodiment of the present invention can be referred to Figure 7 In a possible embodiment, in a direction parallel to the plane where the driving substrate 10 is located, the side wall of the opening 210 bulges away from the center of the opening 210 , and the side wall of the color conversion structure 30 contacting the first electrode 202 bulges away from the center of the color conversion structure 30 .

[0070] The side wall of the opening 210 refers to the side wall of the first electrode 202 in the opening 210. The side wall of the opening 210 bulges toward the side away from the center of the opening 210. In other words, the side of the first electrode 202 facing the opening 210 is designed to be concave. The concave side wall is conducive to reflecting light upward, further improving the brightness of the light.

[0071] Optional, Figure 8 A cross-sectional structural diagram of another display panel provided in an embodiment of the present invention can be referred to Figure 8 In a possible embodiment, the display panel further includes a functional layer 60 . The functional layer 60 is located in the opening 210 . The color conversion structure 30 and the first electrode 202 are separated by the functional layer 60 .

[0072] like Figure 8 As shown, the functional layer 60 covers at least a portion of the sidewall of the first electrode 202 in the opening 210 and the first semiconductor layer 204 exposed at the opening 210. In the opening 210, the color conversion structure 30 is located on a side of the functional layer 60 away from the first electrode 202 and the first semiconductor layer 204, and the functional layer 60 can separate the color conversion structure 30 from the first electrode 202 and the first semiconductor layer 204.

[0073] The function of the functional layer 60 is not limited, and those skilled in the art can set it according to actual needs. For example, the functional layer 60 can be an optical functional layer or a thermal functional layer, but is not limited thereto. When the functional layer 60 is an optical functional layer, the functional layer 60 is used to improve the incident efficiency of light to the color conversion structure 30. When the functional layer 60 is a thermal functional layer, the functional layer 60 is used to dissipate heat from the color conversion structure 30.

[0074] For example, Fig. 9 A cross-sectional structural diagram of another display panel provided in an embodiment of the present invention can be referred to Fig. 9 The functional layer 60 may include a heat-conducting layer 601 and a heat-insulating layer 602 which are stacked, and the heat-conducting layer 601 is located between the heat-insulating layer 602 and the color conversion structure 30 .

[0075] like Fig. 9 As shown, as an optional embodiment, the functional layer 60 may be a thermal functional layer, for example, the functional layer 60 includes a stacked heat-conducting layer 601 and a heat-insulating layer 602, the heat-insulating layer 602 may be in contact with the side wall of the first electrode 202 and the first semiconductor layer 204, the heat-conducting layer 601 is located on the side of the heat-insulating layer 602 away from the first electrode 202 and the first semiconductor layer 204, and the color conversion structure 30 is located on the side of the heat-conducting layer 601 away from the heat-insulating layer 602. The thermal conductivity efficiency of the heat-conducting layer 601 is higher than that of the heat-insulating layer 602.

[0076] The heat conducting layer 601 may be made of heat conducting materials, including but not limited to aerogels, polymers, and composite materials of aerogels and polymers, etc. The heat insulating layer 602 may be made of heat insulating materials, including but not limited to graphene materials.

[0077] By setting the heat-conducting layer 601 in contact with the color conversion structure 30, the heat-conducting layer 601 can transfer the heat generated by the color conversion structure 30 to the outside, thereby avoiding the performance abnormality caused by the temperature increase of the color conversion structure 30. Since the first electrode 202 needs to receive an electrical signal, in general, the temperature of the first electrode 202 will be higher than the temperature of the color conversion structure 30. By setting the heat-insulating layer 602 between the heat-conducting layer 601 and the heat-insulating layer 602, the heat-insulating layer 602 plays a heat-insulating effect, thereby avoiding the heat of the first electrode 202 from being transferred to the color conversion structure 30 as much as possible. In addition, if the heat of individual areas is transferred to the heat-conducting layer 601 through the heat-insulating layer 602, due to the high heat-conducting efficiency of the heat-conducting layer 601, the heat of the smaller area in the heat-insulating layer 602 can be quickly transferred to the larger area of ​​the heat-conducting layer 601, that is, the heat is dissipated from "point" to "surface", thereby avoiding the heat from being transferred to the color conversion structure 30.

[0078] In addition, it should be noted that when preparing the functional layer 60 , the transmittance of the functional layer 60 can be controlled to be above 80% to avoid affecting the incident efficiency of light to the color conversion structure 30 .

[0079] When a thermal conductive layer 601 and a thermal insulating layer 602 are provided in the opening 210, there is no need to limit the high temperature resistance of the color conversion structure 30, and there is no need to use a high temperature resistant color conversion material to prepare the color conversion structure 30; when a thermal conductive layer 601 and a thermal insulating layer 602 are not provided in the opening 210, a high temperature resistant color conversion material can be used to prepare the color conversion structure 30 to ensure the stability of the performance of the color conversion structure 30 in a high temperature environment.

[0080] Exemplarily, the color conversion material may be a quantum dot material, which is distributed in an organic medium and thus filled in the opening 210 or the groove of the first electrode layer 200. When the heat-conducting layer 601 and the heat-insulating layer 602 are not provided in the opening 210, a quantum dot material and / or an organic medium with good high temperature resistance may be selected; when the heat-conducting layer 601 and the heat-insulating layer 602 are provided in the opening 210, the quantum dot material and the organic medium are not limited by the high temperature resistance.

[0081] Optional, Fig.10 A cross-sectional structural diagram of another display panel provided in an embodiment of the present invention can be referred to Fig.10 The display panel further includes a plurality of transparent dimming structures 70 , which are located on a side of the light generating layer 201 away from the driving substrate 10 , and a surface of the transparent dimming structure 70 on a side away from the light generating layer 201 bulges toward a side away from the light generating layer 201 .

[0082] Fig.10 In the illustrated embodiment, a transparent dimming structure 70 may be provided on the side of the light generating layer 201 away from the driving substrate 10, and the transparent dimming structure 70 overlaps with the light generating layer 201 in a direction perpendicular to the thickness of the driving substrate 10. The surface of the transparent dimming structure 70 on the side away from the light generating layer 201 is its light emitting surface, and the light emitting surface of the transparent dimming structure 70 may be provided in a convex lens structure, thereby further improving the light emitting brightness of the light emitting unit at a normal viewing angle. The convex surface structure of the light emitting surface of the transparent dimming structure 70 may be in any shape, such as a hemispherical shape, a polyhedron shape, etc., but is not limited thereto.

[0083] The embodiment of the present invention does not limit the specific position of the transparent dimming structure 70 in the thickness direction of the driving substrate 10, and those skilled in the art can set it according to actual needs. For example, in the direction perpendicular to the plane where the driving substrate 10 is located, the transparent dimming structure 70 can be located between the color conversion structure 30 and the light generating layer 201, or the transparent dimming structure 70 can be located on the side of the color conversion structure 30 away from the light generating layer 201.

[0084] Continue to refer Fig.10In some embodiments, the transparent dimming structure 70 may be located on the side of the first semiconductor layer 204 away from the light generating layer 201, and the color conversion structure 30 may be located on the side of the transparent dimming structure 70 away from the first semiconductor layer 204. In this configuration, the light emitted by the light emitting element 20 is first collimated and converged by the transparent dimming structure 70 before entering the color conversion structure 30. In an embodiment not shown in the drawings of the present invention, the transparent dimming structure 70 may be located on the side of the color conversion structure 30 away from the light generating layer 201. In this configuration, the light emitted by the light emitting element 20 is first converted in color by the color conversion structure 30 before entering the transparent dimming structure 70.

[0085] The transparent dimming structure 70 may be made of a high-refractive material, which is not limited in the embodiment of the present invention.

[0086] Fig.11 A cross-sectional structural diagram of another display panel provided in an embodiment of the present invention can be referred to Fig.11 The surface of the first semiconductor layer 204 facing away from the light generating layer 201 includes a plurality of microstructures 2041 .

[0087] like Fig.11 As shown, the microstructure 2041 may refer to a protrusion and / or a recessed structure on the surface of the first semiconductor layer 204 facing away from the light generating layer 201. Fig.11 In the example, the first semiconductor layer 204 includes a plurality of protruding microstructures 2041, but the present invention is not limited thereto. The existence of the microstructures 2041 makes the first semiconductor layer 204 a rough surface. The advantage of providing the microstructures 2041 is that the light emitting angle of the light emitting element 20 can be adjusted by the microstructures 2041, so as to avoid the total internal reflection of the light emitted from the light generating layer 201 in the first semiconductor layer 204, thereby improving the light emitting efficiency of the light emitting element 20.

[0088] You can continue to refer to Figure 3 The light-emitting element 20 may include a first light-emitting element 2001, a second light-emitting element 2002 and a third light-emitting element 2003, and the light-generating layers 201 of the first light-emitting element 2001, the second light-emitting element 2002 and the third light-emitting element 2003 are made of the same material; the color conversion structure 30 includes a first color conversion structure 301, a second color conversion structure 302 and a third color conversion structure 303, in a direction perpendicular to the plane where the driving substrate 10 is located, the first color conversion structure 301 overlaps with the light-generating layer 201 of the first light-emitting element 2001, the second color conversion structure 302 overlaps with the light-generating layer 201 of the second light-emitting element 2002, and the third color conversion structure 303 overlaps with the light-generating layer 201 of the third light-emitting element 2003; the light emitted from the light-generating layer 201 emits a first color light through the first color conversion structure 301, emits a second color light through the second color conversion structure 302, and emits a third color light through the third color conversion structure 303.

[0089] like Figure 3 As shown, the first light-emitting element 2001, the second light-emitting element 2002 and the third light-emitting element 2003 can be light-emitting elements 20 with the same light-emitting color, that is, the first light-emitting element 2001, the second light-emitting element 2002 and the third light-emitting element 2003 are the same light-emitting element 20, and the first semiconductor layer 204, the light generating layer 201 and the second semiconductor layer 205 of the three light-emitting elements 20 can be exactly the same, so that they are grown on the same epitaxial substrate.

[0090] Different color conversion structures 30 are respectively provided for the first light emitting element 2001, the second light emitting element 2002 and the third light emitting element 2003. The light emitted by the first light emitting element 2001 emits a first color light line through the first color conversion structure 301, the light emitted by the second light emitting element 2002 emits a second color light line through the second color conversion structure 302, and the light emitted by the third light emitting element 2003 emits a third color light line through the third color conversion structure 303. The first light emitting element 2001 and the first color conversion structure 301 constitute a first color light emitting unit 501, the second light emitting element 2002 and the second color conversion structure 302 constitute a second color light emitting unit 502, and the third light emitting element 2003 and the third color conversion structure 303 constitute a third color light emitting unit 503. The first color conversion structure 301, the second color conversion structure 302 and the third color conversion structure 303 can respectively include color conversion materials of different colors, so as to realize the emission of light of different colors and realize full-color display.

[0091] Optional, you can continue to refer to Figure 3 The light generating layers 201 of the first light emitting element 2001, the second light emitting element 2002 and the third light emitting element 2003 all emit light of the first color; the first color conversion structure 301 includes a transparent material, the second color conversion structure 302 includes a second color quantum dot material, and the third color conversion structure 303 includes a third color quantum dot material.

[0092] Figure 3 In the illustrated embodiment, the light-emitting elements 20 all emit light of the first color. When the light-emitting element 20 emits light of the first color, the first color conversion structure 301 does not need to perform color conversion on the light emitted by the light-emitting element 20. The first color conversion structure 301 may include a transparent material, and the light emitted by the light-emitting element 20 still emits light of the first color after passing through the transparent material. The second color conversion structure 302 includes a second color quantum dot material, and the light emitted by the light-emitting element 20 emits light of the second color after being converted by the second color quantum dot material. The third color conversion structure 303 includes a third color quantum dot material, and the light emitted by the light-emitting element 20 emits light of the third color after being converted by the third color quantum dot material.

[0093] Furthermore, the inventors have found that there is a certain difference in the optical power of the same color light after passing through different color conversion structures 30. When the light-emitting element 20 emits the first color light, the light-emitting element 20 does not need to excite the conversion process at the first color conversion structure 301, so the optical power of the light emitted by the first color light-emitting unit 501 is greater than the optical power of the other two light-emitting units, resulting in a higher brightness of the first color light, and lower brightness of the second color light and the third color light, which may cause color cast problems. Based on the above problems, this embodiment proposes that the color conversion structures 30 in different light-emitting units 50 can be set differently, so as to improve the consistency of the optical power of the light emitted by different light-emitting units 50 and improve the color cast problem.

[0094] For example, Fig.12 A schematic cross-sectional structure diagram of another display panel provided in an embodiment of the present invention, Fig.12 The scheme of differentially setting different color conversion structures 30 is shown. Taking the light emitting elements 20 in the display panel all emitting first color light as an example, in a possible embodiment, the central wavelength of the first color light is smaller than the central wavelength of the second color light, and the central wavelength of the second color light is smaller than the central wavelength of the third color light; the orthographic projection figure of the first color conversion structure 301 on the plane where the driving substrate 10 is located has a first area S1, the orthographic projection figure of the second color conversion structure 302 on the plane where the driving substrate 10 is located has a second area S2, and the orthographic projection figure of the third color conversion structure 303 on the plane where the driving substrate 10 is located has a third area S3; wherein S1<S3<S2; and / or, in a direction perpendicular to the plane where the driving substrate 10 is located, the first color conversion structure 301 has a first thickness H1, the second color conversion structure 302 has a second thickness H2, and the third color conversion structure 303 has a third thickness H3; wherein H1<H3<H2.

[0095] Exemplarily, the first color light may be blue light, the second color light may be green light, and the third color light may be red light. In this embodiment, the light emitting element 20 in the display panel may be a blue light Micro-LED chip. Correspondingly, the second color quantum dot material may be a green quantum dot material, and the third color quantum dot material may be a red quantum dot material. As described above, since the light emitting element 20 itself emits blue light, the light emitting element 20 does not need to be excited and converted at the first color conversion structure 301. Therefore, the light power of the light emitted by the light emitting element 20 through the first color conversion structure 301 is the largest. Studies have found that the excitation efficiency of the red quantum dot material on the light emitting element 20 is higher than the excitation efficiency of the green quantum dot material on the light emitting element 20. That is, when the wavelength of the laser light of the quantum dot is larger, the greater the excited light power. When the size and shape of the second color conversion structure 302 and the third color conversion structure 303 are exactly the same, the blue light power excited by the second color conversion structure 302 is less than the red light power excited by the third color conversion structure 303.

[0096] In summary, it can be concluded that when the sizes and shapes of the first color conversion structure 301, the second color conversion structure 302 and the third color conversion structure 303 are exactly the same, the optical power of the first color light (blue light) emitted by the first color light emitting unit 501 is greater than the optical power of the third color light (red light) emitted by the third color light emitting unit 503, and the optical power of the third color light (red light) emitted by the third color light emitting unit 503 is greater than the optical power of the second color light (green light) emitted by the second color light emitting unit 502.

[0097] Based on this, the present embodiment proposes that the area S2 of the orthographic projection figure of the second color conversion structure 302 on the plane where the driving substrate 10 is located can be set to be the largest, the area S3 of the orthographic projection figure of the third color conversion structure 303 on the plane where the driving substrate 10 is located can be set to be the second largest, and the area S1 of the orthographic projection figure of the first color conversion structure 301 on the plane where the driving substrate 10 is located can be set to be the smallest; and / or the thickness H2 of the second color conversion structure 302 can be set to be the largest, the thickness H3 of the third color conversion structure 303 can be set to be the second largest, and the thickness H1 of the first color conversion structure 301 can be set to be the smallest. In this way, the problem of different luminous brightness caused by different quantum dot excitation efficiencies can be compensated, and the consistency of luminous brightness of different light-emitting elements 20 can be improved.

[0098] like Fig.12 As shown, the thickness H1 of the first color conversion structure 301 can be set to be smaller than the thickness H3 of the third color conversion structure 303, and the thickness H3 of the third color conversion structure 303 can be set to be smaller than the thickness H2 of the second color conversion structure 302. The differentiated arrangement of the three areas is not described in detail in the drawings of the present invention. The purpose of differentiated arrangement of the areas of the color conversion structures 30 can be achieved by setting the areas of the openings 210 above the first light-emitting element 2001, the second light-emitting element 2002, and the third light-emitting element 2003 to be different.

[0099] Optional, Fig.13 A cross-sectional structural diagram of another display panel provided in an embodiment of the present invention can be referred to Fig.13 In some other embodiments, the light generating layers 201 of the first light emitting element 2001, the second light emitting element 2002 and the third light emitting element 2003 all emit ultraviolet light; the first color conversion structure 301 includes a first color quantum dot material, the second color conversion structure 302 includes a second color quantum dot material, and the third color conversion structure 303 includes a third color quantum dot material.

[0100] Fig.13 In the illustrated embodiment, the light-emitting elements 20 all emit ultraviolet light, and the light-emitting elements 20 in the display panel may be ultraviolet light Micro-LED chips. The first color conversion structure 301 includes a first color quantum dot material, and the light emitted by the light-emitting element 20 is converted by the first color quantum dot material to emit a first color light. The second color conversion structure 302 includes a second color quantum dot material, and the light emitted by the light-emitting element 20 is converted by the second color quantum dot material to emit a second color light. The third color conversion structure 303 includes a third color quantum dot material, and the light emitted by the light-emitting element 20 is converted by the third color quantum dot material to emit a third color light.

[0101] Correspondingly, taking the case where all the light-emitting elements 20 in the display panel emit ultraviolet light as an example, in this embodiment, a first area S1 of the orthographic projection figure of the first color conversion structure 301 on the plane where the driving substrate 10 is located, a second area S2 of the orthographic projection figure of the second color conversion structure 302 on the plane where the driving substrate 10 is located, and a third area S3 of the orthographic projection figure of the third color conversion structure 303 on the plane where the driving substrate 10 is located satisfy: S3<S2<S1; and / or, in a direction perpendicular to the plane where the driving substrate 10 is located, a first thickness H1 of the first color conversion structure 301, a second thickness H2 of the second color conversion structure 302, and a third thickness H3 of the third color conversion structure 303 satisfy: H3<H2

[0102] ​As described above, the first color light can be blue light, the second color light can be green light, the third color light can be red light, the first color quantum dot material can be blue quantum dot material, the second color quantum dot material can be green quantum dot material, and the third color quantum dot material can be red quantum dot material. The three light-emitting units all need to excite the conversion process. Referring to the above analysis, when the size and shape of the first color conversion structure 301, the second color conversion structure 302 and the third color conversion structure 303 are exactly the same, the optical power of the third color light (red light) emitted by the third color light-emitting unit 503 is greater than the optical power of the second color light (green light) emitted by the second color light-emitting unit 502, and the optical power of the second color light (green light) emitted by the second color light-emitting unit 502 is greater than the optical power of the first color light (blue light) emitted by the first color light-emitting unit 501.

[0103] Based on this, the present embodiment proposes that the area S1 of the orthographic projection figure of the first color conversion structure 301 on the plane where the driving substrate 10 is located can be set to be the largest, the area S2 of the orthographic projection figure of the second color conversion structure 302 on the plane where the driving substrate 10 is located can be set to be the second largest, and the area S3 of the orthographic projection figure of the third color conversion structure 303 on the plane where the driving substrate 10 is located can be set to be the smallest; and / or the thickness H1 of the first color conversion structure 301 can be set to be the largest, the thickness H2 of the second color conversion structure 302 can be set to be the second largest, and the thickness H3 of the third color conversion structure 303 can be set to be the smallest, such as Fig.13 As shown, the problem of different luminous brightness caused by different excitation efficiencies of quantum dots is compensated, and the consistency of luminous brightness of different light-emitting elements 20 is improved.

[0104] You can continue to refer to Figure 1 The display panel includes a first display area AA1 and a second display area AA2 surrounding at least a portion of the first display area AA1; the area of ​​the orthographic projection figure of the color conversion structure 30 in the first display area AA1 on the plane where the driving substrate 10 is located is smaller than the area of ​​the orthographic projection figure of the color conversion structure 30 in the second display area AA2 on the plane where the driving substrate 10 is located; and / or, in a direction perpendicular to the plane where the driving substrate 10 is located, the thickness of the color conversion structure 30 in the first display area AA1 is smaller than the thickness of the color conversion structure 30 in the second display area AA2.

[0105] like Figure 1 As shown, the display panel also includes a non-display area NA, which is located on the side of the second display area AA2 away from the first display area AA1. The first display area AA1 can be regarded as the middle display area, and the second display area AA2 can be regarded as the edge display area. Studies have found that due to the viewing angle of the light-emitting element 20 itself, the brightness of the display panel will change with the change of the viewing angle. At a large viewing angle, the light-emitting brightness of the light-emitting unit at the edge of the display panel is relatively small, affecting the overall brightness uniformity of the display panel.

[0106] Based on this, the present embodiment proposes that the color conversion structure 30 of the light-emitting unit in the first display area AA1 can be set to have a smaller area and / or thickness, and the color conversion structure 30 of the light-emitting unit in the second display area AA2 can be set to have a larger area and / or thickness, thereby improving the display brightness uniformity under a wide viewing angle and enhancing the display effect.

[0107] Based on the same concept, an embodiment of the present invention further provides a method for preparing a display panel, which is used to prepare a display panel provided by any embodiment of the present invention. Fig.14 A flowchart of a method for manufacturing a display panel provided by an embodiment of the present invention, referring to Fig.14 , the method for preparing the display panel comprises the following steps:

[0108] S110, providing a driving substrate and a transfer substrate.

[0109] The driving substrate may include a base substrate and a driving array layer located on one side of the base substrate, wherein the driving array layer includes a plurality of pixel driving circuits, and the pixel driving circuits are electrically connected to the light-emitting elements to drive the light-emitting elements to emit light. The driving substrate may include a receiving pad, and the receiving pad is used to be electrically connected to the light-emitting elements later.

[0110] The transfer substrate includes a plurality of light-emitting elements to be transferred, and the light-emitting elements to be transferred may include at least a first semiconductor layer, a light-generating layer, and a second semiconductor layer stacked in sequence. The light-emitting elements may be transferred from the epitaxial structure to the transfer substrate.

[0111] S120, after bonding the transfer substrate to the driving substrate, peeling off the transfer substrate to obtain a plurality of light emitting elements located on one side of the driving substrate.

[0112] The light-emitting element further includes a first electrode and a second electrode, the film layer where the first electrode is located is located on the side of the light-generating layer away from the driving substrate, and the second electrode is located on the side of the light-generating layer away from the first electrode. Specifically, the first electrode may be located on the side of the first semiconductor layer away from the driving electrode, and the second electrode is located on the side of the second semiconductor layer away from the light-generating layer. The second electrode may be prepared on the light-emitting element to be transferred before bonding, and the first electrode may be prepared on the light-emitting element to be transferred before or after bonding, which is not limited in the embodiment of the present invention.

[0113] S130 , preparing a plurality of color conversion structures on a side of the light generating layer facing away from the driving substrate.

[0114] The preparation method of the color conversion structure is not limited. In a direction parallel to the plane where the driving substrate is located, the color conversion structure overlaps with the first electrode, and in a direction perpendicular to the plane where the driving substrate is located, the color conversion structure overlaps with the light generating layer.

[0115] Through the above scheme, the difficulty of the display panel preparation process can be reduced and the process can be simplified. The existence of the color conversion structure can realize full-color display of the display panel, and the color conversion structure does not increase the thickness of the display panel too much, which can meet the demand for thin and light display panels.

[0116] The method for preparing a display panel provided in an embodiment of the present invention includes all technical features and corresponding beneficial effects of the display panel provided in any embodiment of the present invention. For contents not fully described in the method for preparing the display panel, reference can be made to the corresponding embodiments of the display panel.

[0117] Optionally, in a possible embodiment, the light-emitting element to be transferred includes a light-generating layer; (S120) in the above embodiment can be refined as follows: S221, peeling off the transfer substrate after bonding the transfer substrate to the driving substrate; S222, preparing a first electrode layer on the side of the light-generating layer away from the driving substrate; S223, patterning the first electrode layer to form a plurality of first electrodes and a plurality of openings to obtain a plurality of light-emitting elements located on one side of the driving substrate; the opening passes through the first electrode layer, and the opening overlaps with the light-generating layer in a direction perpendicular to the plane of the driving substrate; (S130) can be refined as follows: S230, preparing a color conversion structure in the opening.

[0118] Fig.15 A flowchart of another method for manufacturing a display panel provided by an embodiment of the present invention, Fig.16 for Fig.15 Schematic diagram of the preparation method shown, refer to Fig.15 and Fig.16 , a method for preparing a display panel includes:

[0119] S210, providing a driving substrate and a transfer substrate.

[0120] Among them, reference Fig.16 In Figure (a), the transfer substrate 80 includes a plurality of light-emitting elements 2000 to be transferred. The light-emitting elements 2000 to be transferred may include a first semiconductor layer 204, a light-generating layer 201, a second semiconductor layer 205 and a second electrode 203. The second electrode 203 is located on a side of the second semiconductor layer 205 away from the light-generating layer 201.

[0121] S221, after bonding the transfer substrate to the drive substrate, peeling off the transfer substrate.

[0122] refer to Fig.16 In the middle figure (b), after the transfer substrate 80 is aligned with the driving substrate 10 and the second electrode 203 of the light emitting element 2000 to be transferred is fixed to the receiving pad in the driving substrate 10, the transfer substrate 80 is peeled off.

[0123] S222, preparing a first electrode layer on a side of the light generating layer facing away from the driving substrate.

[0124] refer to Fig.16 In Figure (c), a first electrode layer 200 can be formed on the side of the first semiconductor layer 204 away from the driving substrate 10. The preparation process of the first electrode layer 200 is not limited, and those skilled in the art can select it according to actual needs.

[0125] S223 , patterning the first electrode layer to form a plurality of first electrodes and a plurality of openings, thereby obtaining a plurality of light-emitting elements located on one side of the driving substrate.

[0126] refer to Fig.16 In the middle (d) figure, the first electrode layer 200 can be patterned by photolithography and nanoimprinting processes to remove at least part of the first electrode layer 200 above the light generating layer 201 (in the direction away from the driving substrate 10) to form an opening 210. The opening 210 penetrates the first electrode layer 200, and in a direction perpendicular to the plane where the driving substrate 10 is located, the opening 210 overlaps with the light generating layer 201.

[0127] S230, preparing a color conversion structure in the opening.

[0128] refer to Fig.16 In the middle (e) figure, the color conversion material can be filled in the opening 210. The color conversion material can be a quantum dot material, and the quantum dot material is distributed in an organic medium. The quantum dot material can be filled into the opening 210 by inkjet printing or other processes, and then cured to obtain a color conversion structure 30.

[0129] With the above solution, the first electrode surrounding the opening can be used as a limiting wall of the color conversion structure, and the color conversion structure can be formed by directly filling the opening with a color conversion material. In this way, there is no need to prepare an additional color conversion structure limiting layer, and the preparation process of the color conversion structure can be simplified on the basis of ensuring the position accuracy of the color conversion structure.

[0130] The method for manufacturing a display panel provided in the embodiment of the present invention may further include any steps known to those skilled in the art, such as the preparation of an encapsulation layer, etc., which will not be elaborated or limited in the embodiment of the present invention.

[0131] Based on the same concept, an embodiment of the present invention further provides a display device. Fig.17 FIG. 1 is a schematic diagram of a display device provided by an embodiment of the present invention. Fig.17 As shown, the display device includes the display panel 100 provided by any embodiment of the present invention. Therefore, the display device provided by the embodiment of the present invention has the corresponding beneficial effects of the display panel provided by the embodiment of the present invention, which will not be repeated here. Exemplarily, the display device can be an electronic device such as a mobile phone, a computer, a smart wearable device (for example, a smart watch), and a car display device, which is not limited by the embodiment of the present invention.

[0132] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments provided herein, and that various obvious changes, readjustments, combinations and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A display panel, characterized in that: It includes a driving substrate and a plurality of light-emitting elements located on one side of the driving substrate; The light emitting element comprises a light generating layer and a first electrode, wherein the film layer where the first electrode is located is located on a side of the light generating layer away from the driving substrate; The display panel also includes a plurality of color conversion structures, wherein the film layer where the color conversion structures are located is located on the side of the light generating layer away from the driving substrate; in a direction parallel to the plane where the driving substrate is located, the color conversion structure overlaps with the first electrode, and in a direction perpendicular to the plane where the driving substrate is located, the color conversion structure overlaps with the light generating layer.

2. The display panel according to claim 1, characterized in that: The display panel includes a first electrode layer, the first electrode layer is located on a side of the light generating layer away from the driving substrate, the first electrode layer includes a plurality of first electrodes and a plurality of openings, and the openings penetrate the first electrode layer; In a direction perpendicular to a plane where the driving substrate is located, the opening overlaps with the light generating layer, and the color conversion structure is at least partially located in the opening.

3. The display panel according to claim 2, characterized in that: In a direction perpendicular to the plane where the driving substrate is located, the thickness of the color conversion structure is less than or equal to the depth of the opening.

4. The display panel according to claim 2, characterized in that: The light emitting element further comprises a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer is located on a side of the light generating layer facing the first electrode layer, and the second semiconductor layer is located on a side of the light generating layer facing the driving substrate; The side of the first semiconductor layer facing away from the light generating layer comprises a first groove, a side wall of the first groove is connected to a side wall of the opening, and the color conversion structure is also located in the first groove.

5. The display panel according to claim 1, characterized in that: The display panel comprises a first electrode layer, the first electrode layer is located on a side of the light generating layer away from the driving substrate, the first electrode layer comprises a plurality of first electrodes and a plurality of second grooves, and the second grooves extend from the side of the first electrode layer away from the driving substrate to a side close to the driving substrate; In a direction perpendicular to the plane where the driving substrate is located, the second groove overlaps with the light generating layer, and the color conversion structure is at least partially located in the second groove.

6. The display panel according to claim 2 or 5, characterized in that: A surface of the color conversion structure facing away from the drive substrate is flush with a surface of the first electrode facing away from the drive substrate.

7. The display panel according to claim 2 or 5, characterized in that: The color conversion structure protrudes from the first electrode in a direction away from the driving substrate.

8. The display panel according to claim 7, characterized in that: A surface of the color conversion structure on one side facing away from the driving substrate is convex toward a side facing away from the driving substrate.

9. The display panel according to claim 2, characterized in that: In a direction parallel to the plane where the drive substrate is located, the side wall of the opening protrudes away from the center of the opening, and the side wall of the color conversion structure contacting the first electrode protrudes away from the center of the color conversion structure.

10. The display panel according to claim 2, characterized in that: The display panel further includes a functional layer, the functional layer is located in the opening, and the color conversion structure and the first electrode are spaced apart by the functional layer.

11. The display panel according to claim 10, characterized in that: The functional layer includes a heat-conducting layer and a heat-insulating layer which are stacked, and the heat-conducting layer is located between the heat-insulating layer and the color conversion structure.

12. The display panel according to claim 1, characterized in that: The display panel further includes a plurality of transparent dimming structures, wherein the transparent dimming structures are located on a side of the light generating layer away from the driving substrate, and a surface of the transparent dimming structure on a side away from the light generating layer protrudes toward a side away from the light generating layer.

13. The display panel according to claim 12, characterized in that: In a direction perpendicular to the plane where the driving substrate is located, the transparent dimming structure is located between the color conversion structure and the light generating layer, or the transparent dimming structure is located on a side of the color conversion structure away from the light generating layer.

14. The display panel according to claim 1, characterized in that: The light-emitting element also includes a first semiconductor layer, a second semiconductor layer and a second electrode. The second semiconductor layer is located on the side of the light-generating layer facing the driving substrate, the first semiconductor layer is located on the side of the light-generating layer facing the film layer where the first electrode is located, the second electrode is located on the side of the second semiconductor layer away from the light-generating layer, and the second electrode is bonded to the driving substrate.

15. The display panel according to claim 14, characterized in that: A surface of the first semiconductor layer facing away from the light generating layer includes a plurality of microstructures.

16. The display panel according to claim 1, characterized in that: The light-emitting elements include a first light-emitting element, a second light-emitting element and a third light-emitting element, wherein the light-generating layers of the first light-emitting element, the second light-emitting element and the third light-emitting element are made of the same material; The color conversion structure includes a first color conversion structure, a second color conversion structure and a third color conversion structure, in a direction perpendicular to the plane where the drive substrate is located, the first color conversion structure overlaps with the light generating layer of the first light emitting element, the second color conversion structure overlaps with the light generating layer of the second light emitting element, and the third color conversion structure overlaps with the light generating layer of the third light emitting element; The light emitted by the light generating layer emits a first color light through the first color conversion structure, emits a second color light through the second color conversion structure, and emits a third color light through the third color conversion structure.

17. The display panel according to claim 16, characterized in that: The light generating layers of the first light emitting element, the second light emitting element and the third light emitting element all emit light of a first color; The first color conversion structure includes a transparent material, the second color conversion structure includes a second color quantum dot material, and the third color conversion structure includes a third color quantum dot material.

18. The display panel according to claim 17, characterized in that: The central wavelength of the first color light is smaller than the central wavelength of the second color light, and the central wavelength of the second color light is smaller than the central wavelength of the third color light; The orthographic projection of the first color conversion structure on the plane where the driving substrate is located has a first area S1, the orthographic projection of the second color conversion structure on the plane where the driving substrate is located has a second area S2, and the orthographic projection of the third color conversion structure on the plane where the driving substrate is located has a third area S3; wherein S1<S3<S2; and / or, In a direction perpendicular to the plane where the driving substrate is located, the first color conversion structure has a first thickness H1, the second color conversion structure has a second thickness H2, and the third color conversion structure has a third thickness H3; wherein H1<H3<H2.

19. The display panel according to claim 16, characterized in that: The light generating layers of the first light emitting element, the second light emitting element and the third light emitting element all emit ultraviolet light; The first color conversion structure includes a first color quantum dot material, the second color conversion structure includes a second color quantum dot material, and the third color conversion structure includes a third color quantum dot material.

20. The display panel according to claim 19, characterized in that: The central wavelength of the first color light is smaller than the central wavelength of the second color light, and the central wavelength of the second color light is smaller than the central wavelength of the third color light; The orthographic projection of the first color conversion structure on the plane where the driving substrate is located has a first area S1, the orthographic projection of the second color conversion structure on the plane where the driving substrate is located has a second area S2, and the orthographic projection of the third color conversion structure on the plane where the driving substrate is located has a third area S3; wherein S3<S2<S1; and / or, In a direction perpendicular to the plane where the driving substrate is located, the first color conversion structure has a first thickness H1, the second color conversion structure has a second thickness H2, and the third color conversion structure has a third thickness H3; wherein H3<H2<H1.

21. The display panel according to claim 1, characterized in that: The display panel comprises a first display area and a second display area surrounding at least a portion of the first display area; The area of ​​the orthographic projection of the color conversion structure in the first display area on the plane where the driving substrate is located is smaller than the area of ​​the orthographic projection of the color conversion structure in the second display area on the plane where the driving substrate is located; and / or, In a direction perpendicular to a plane where the driving substrate is located, a thickness of the color conversion structure in the first display area is smaller than a thickness of the color conversion structure in the second display area.

22. The display panel according to claim 1, characterized in that: In the same light-emitting element, the orthographic projection of the first electrode on the plane where the driving substrate is located surrounds the orthographic projection of the color conversion structure on the plane where the driving substrate is located.

23. A method for preparing a display panel, characterized in that: Used to prepare the display panel according to any one of claims 1 to 22, the method for preparing the display panel comprising: Providing a driving substrate and a transfer substrate; the transfer substrate includes a plurality of light-emitting elements to be transferred; After bonding the transfer substrate to the drive substrate, the transfer substrate is peeled off to obtain a plurality of light-emitting elements located on one side of the drive substrate; the light-emitting elements include a light-generating layer and a first electrode, and the film layer where the first electrode is located is located on a side of the light-generating layer away from the drive substrate; A plurality of color conversion structures are prepared on a side of the light generating layer away from the driving substrate; the color conversion structure overlaps with the first electrode in a direction parallel to the plane where the driving substrate is located, and overlaps with the light generating layer in a direction perpendicular to the plane where the driving substrate is located.

24. The method for preparing a display panel according to claim 23, characterized in that: The light-emitting element to be transferred includes a light-generating layer; The transfer substrate is bonded to the drive substrate and then the transfer substrate is peeled off to obtain a plurality of light emitting elements located on one side of the drive substrate, including: After bonding the transfer substrate to the drive substrate, the transfer substrate is peeled off; Prepare a first electrode layer on a side of the light generating layer away from the driving substrate; The first electrode layer is patterned to form a plurality of the first electrodes and a plurality of openings, thereby obtaining a plurality of light-emitting elements located on one side of the driving substrate; the openings penetrate the first electrode layer, and in a direction perpendicular to the plane where the driving substrate is located, the openings overlap with the light-generating layer; A plurality of color conversion structures are prepared on a side of the light generating layer away from the driving substrate, including: The color conversion structure is fabricated within the opening.

25. A display device, characterized in that: Comprising a display panel as described in any one of claims 1-22.

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