Sensor of light beam analyzer, light splitting device and spectrum equipment

Abstract

The invention provides a sensor of a light beam analyzer and the light beam analyzer. The sensor is mainly composed of a pixel array structure, a composite film arranged above the pixel array structure and the like. The composite film at least comprises a heat absorption film and a thermosensitive conductive film which are sequentially arranged from top to bottom. The heat absorption film is used for absorbing incident light in a target wavelength range, converting energy of the incident light into heat and causing temperature change of the thermosensitive conductive film. And the thermosensitive conductive film is electrically connected with the pixel array structure and is used for converting the temperature change of the thermosensitive conductive film into an electric signal and outputting the electric signal to the pixel array structure so as to obtain the corresponding incident light intensity. Compared with the prior art, light beams of all wavelengths from ultraviolet to infrared bands can be detected, and the application range of equipment is greatly widened.

Description

Technical Field

[0001] The invention relates to a sensor, and in particular to a sensor, a light splitting device and a spectrum equipment of a light beam analyzer. Background Art

[0002] A beam profiler is a diagnostic device that measures the entire intensity cross section of a laser beam, i.e. not only the beam radius but also the detailed shape. Many beam profilers use some digital cameras. In the visible and near-infrared spectral regions, CMOS cameras and CCD cameras are the most common. Although CMOS cameras are cheaper, CCD cameras have better linearity and lower noise. Both CCD and CMOS cameras can achieve a resolution of the order of 5μm (given by the pixel size), so the beam radius can be as small as 50μm or even smaller. The size of the active area is several millimeters, so very large beams can be processed.

[0003] Currently, different wavelength regions require different sensor types. Silicon-based sensors are well suited for the visible and near-infrared spectral regions, with waveguides up to 1 or 1.1 μm, while Indium Gallium Arsenide InGaAs detectors can be used for wavelengths up to about 1.7 μm. For longer wavelengths, such as characterizing the beam properties of CO2 lasers, pyroelectric or microbolometer cameras are used. These cameras are relatively expensive. Given the high output power of the laser, its relatively low responsivity is not a disadvantage. For UV lasers, CCD and CMOS arrays can be used in combination with UV conversion panels to convert the radiation to the longer wavelength region without damaging the camera array.

[0004] Traditional beam analyzers use complementary metal oxide semiconductor CMOS (ultraviolet, visible light, near infrared) or indium gallium arsenide (short wave infrared 0.9um ~ 2.5um) or mercury cadmium telluride (medium and long wave infrared 3 ~ 12um) photoelectric sensors or microbolometer sensors to convert the photons of the target light beam into electrical signals through photoelectric effect or thermal effect. Different types of sensors and their matching packaging windows can only sense light within a specific wavelength range, so different light speed analyzers are required for light speeds of different wavelengths. In addition, photoelectric sensors in the infrared band are very expensive and costly.

[0005] To this end, the present invention proposes a beam analyzer with a wide spectral response, which can detect beams of all wavelengths from ultraviolet to infrared bands, greatly enhancing the application scope of the equipment, which is a technical problem that the present invention urgently needs to solve. Summary of the invention

[0006] The object of the present invention is to provide a sensor and a spectrometer for a light beam analyzer, which can detect light beams of all wavelengths from ultraviolet to infrared bands, thereby greatly enhancing the application scope of the equipment.

[0007] In order to achieve the above object, the present invention proposes a sensor of a beam profiler, characterized in that it includes:

[0008] Pixel array structure;

[0009] A composite film disposed above the pixel array structure;

[0010] Wherein, the composite film at least comprises: a heat-absorbing film and a thermosensitive conductive film arranged in sequence from top to bottom;

[0011] The heat absorbing film is used to absorb incident light in a target wavelength range, convert the energy of the incident light into heat and cause a temperature change of the thermosensitive conductive film;

[0012] The thermosensitive conductive film is electrically connected to the pixel array structure and is used to convert its own temperature change into an electrical signal and output it to the pixel array structure to obtain the corresponding incident light intensity.

[0013] Further preferably, it further comprises: a packaging shell having a sealed cavity and an electrical connection channel, wherein the pixel array structure and the composite film are arranged in the sealed cavity;

[0014] A packaging window is arranged on the packaging shell, wherein the packaging window is used to transmit light of any two or more wavebands among visible light, near infrared, short-wave infrared, medium-wave infrared or long-wave infrared.

[0015] Further preferably, the composite film is suspended above the pixel array structure through a supporting component, and a heat insulating space is formed between the composite film and the pixel array structure.

[0016] Further preferably, the pixel array structure comprises: a substrate layer, and sensing units distributed in an array and arranged on the substrate layer; there are one or more composite films, which are respectively arranged on corresponding sensing units and electrically connected.

[0017] Further preferably, each sensing unit is provided with a supporting component for being suspended and electrically connected to the composite film; wherein the supporting component comprises: a positive electrode connecting component and a negative electrode connecting component.

[0018] Further preferably, the positive electrode connecting member and the negative electrode connecting member are respectively arranged at opposite ends of the induction unit; wherein the supporting component is a slender beam member.

[0019] Further preferably, the suspension height between the composite film and the pixel array structure is 0-10 um.

[0020] Further preferably, the heat absorption film comprises: a conductive heat absorption layer and a non-conductive heat absorption layer stacked in sequence from top to bottom; wherein the non-conductive heat absorption layer is used to contact the thermosensitive conductive film.

[0021] Further preferably, the conductive heat absorption layer is made of titanium nitride or titanium, or a superposition of two or more thereof; the non-conductive heat absorption layer is made of silicon oxide or silicon nitride, or a superposition of two or more thereof.

[0022] Further preferably, the material of the heat absorption film is one or a combination of two or more of doped amorphous silicon, vanadium oxide, titanium oxide or titanium.

[0023] Further preferably, the doped amorphous silicon is boron-doped amorphous silicon.

[0024] Further preferably, the resistance temperature coefficient of the thermosensitive conductive film is a positive resistance temperature coefficient or a negative resistance temperature coefficient.

[0025] Further preferably, it also includes: a reflective film arranged above the substrate layer, for reflecting at least part of the light beam passing through the composite film onto the composite film.

[0026] Further preferably, the air pressure in the cavity of the packaging shell is any one of 0.1Pa-100Pa, 100Pa~100000Pa, or 100000Pa~1000000Pa; or the cavity of the packaging shell is filled with gas, wherein the gas is an inert gas or nitrogen.

[0027] Further preferably, the packaging window includes: a light-transmitting layer; wherein the material of the light-transmitting layer is one of optical glass, sapphire, zinc selenide, zinc sulfide, barium fluoride, magnesium fluoride, calcium fluoride, silicon, germanium or a combination thereof.

[0028] Further preferably, the packaging window further comprises: a light filter coating layer covering the light-transmitting layer; wherein the light filter coating layer is an anti-reflection film or a bandpass film;

[0029] And / or the light-transmitting layer is a neutral attenuation sheet.

[0030] The present application also provides a beam analyzer, comprising: the sensor of the above-mentioned beam analyzer.

[0031] Compared with the prior art, the sensor, spectroscopic device and spectral equipment of the beam analyzer provided in the present application can detect light beams of all wavelengths from ultraviolet to infrared bands, greatly enhancing the scope of application of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 A schematic diagram of the internal structure of a sensor of a beam profiler in one embodiment of the present invention;

[0033] Figure 2 A schematic diagram of the structure of a composite film in one embodiment of the present invention;

[0034] Figure 3 A schematic diagram of the structure of a conductive heat-absorbing film in one embodiment of the present invention;

[0035] Figure 4 A schematic diagram of the structure of a conductive heat-absorbing film preferably in one embodiment of the present invention;

[0036] Figure 5 A schematic diagram of the internal structure of a sensor of a beam analyzer in a second embodiment of the present invention;

[0037] Figure 6 Schematic diagram of the internal structure of the sensor of the beam analyzer in the third embodiment of the present invention;

[0038] Figure 7 A schematic diagram of the internal structure of a sensor of a beam analyzer in a fifth embodiment of the present invention;

[0039] Figure 8 A schematic diagram of the internal structure of a sensor of a beam profiler in a sixth embodiment of the present invention;

[0040] Explanation of the reference numerals: incident light 1, light-transmitting layer 2, packaging shell 3, sensing unit 41, composite film 6, heat-absorbing film 61, conductive heat-absorbing layer 611, non-conductive heat-absorbing layer 612, thermosensitive conductive film 62, substrate layer 5, positive electrode connecting component 7, negative electrode connecting component 8, reflecting film 9, light-filtering coating layer 10, conductive heat-absorbing layer 611a, conductive heat-absorbing layer 611b, non-conductive heat-absorbing layer 612a, non-conductive heat-absorbing layer 612b. DETAILED DESCRIPTION

[0041] The sensor of the beam profiler of the present invention will be described in more detail below in conjunction with a schematic diagram, wherein a preferred embodiment of the present invention is shown, and it should be understood that the present invention described herein can be modified by a person skilled in the art while still achieving the advantageous effects of the present invention. Therefore, the following description should be understood as being widely known to a person skilled in the art and not as a limitation of the present invention.

[0042] Embodiment 1

[0043] This embodiment provides a sensor of a beam profiler, such as Figure 1 As shown, it is mainly composed of a pixel array structure, a composite film 6 arranged above the pixel array structure, etc.

[0044] Among them, Figure 1 and Figure 2 As shown, the composite film 6 at least includes: a heat absorbing film 61 and a heat-sensitive conductive film 62 arranged in sequence from top to bottom.

[0045] The heat absorption film 61 is used to absorb the incident light 1 in the target wavelength range, convert the energy of the incident light 1 into heat and cause the temperature of the thermosensitive conductive film 62 to change.

[0046] The thermosensitive conductive film 62 is electrically connected to the pixel array structure and is used to convert its own temperature change into an electrical signal and output it to the pixel array structure to obtain the corresponding incident light intensity.

[0047] The heat-absorbing film 61 absorbs the energy of light beams of different wavelength bands within the target wavelength range, for example, a wide spectrum absorption response from ultraviolet to long-wave infrared bands can be achieved, that is, the light beam energy in all the above intervals can be absorbed by the heat-absorbing film 61 of the sensor and converted into heat for output, and converted into corresponding electrical signals, especially detecting light beams of all wavelengths from ultraviolet to infrared bands, which greatly enhances the application scope of the equipment and facilitates the subsequent signal analysis of light beams of different wavelength bands within the target wavelength range. For example, there is no need to use different beam analyzers to analyze the light beams, which can facilitate operation and reduce the cost of use.

[0048] Specifically, the sensor of the beam profiler further includes: a packaging shell 3 having a sealed cavity and an electrical connection channel (electrical connection channel), wherein the pixel array structure and the composite film 6 are arranged in the sealed cavity.

[0049] Further preferably, the sensor of the beam analyzer further comprises: a packaging window arranged on the packaging shell 3. The packaging window is used to transmit light of any two or more bands among the visible light, near infrared, short-wave infrared, medium-wave infrared or long-wave infrared bands. Therefore, the packaging window can realize wide spectrum absorption response and analysis, so that light beams of all wavelengths from ultraviolet to infrared bands can be detected, which greatly enhances the scope of application.

[0050] Further preferably, the composite film 6 is suspended above the pixel array structure through a supporting component, and a heat-insulating space is formed between the composite film 6 and the pixel array structure.

[0051] Further preferably, the pixel array structure comprises: a substrate layer 5, sensing units 41 distributed in an array and arranged on the substrate layer 5, etc. There are a plurality of composite films 6, which are respectively arranged on corresponding sensing units 41 and electrically connected.

[0052] As a further preferred embodiment, each sensing unit 41 is provided with a supporting component for suspending and electrically connecting the composite film 6. The supporting component includes: a positive electrode connecting member 7, and a negative electrode connecting member 8. The composite film 6 and the substrate layer 5 are suspended by the supporting component, so that thermal insulation between the substrate and the substrate can be achieved, ensuring that the heat converted from the beam energy causes a sufficient temperature rise of the film, and then converted into an electrical signal output. The supporting component can be made of a conductive metal, such as a titanium alloy or a metal such as silver or copper.

[0053] As a further preferred embodiment, the suspension height between the composite film 6 and the pixel array structure is 0-10um. With this suspension height, the entire sensor chip can be packaged in a low-pressure cavity while achieving thermal insulation between the composite film 6 and the substrate layer 5, which can reduce the heat directly conducted through the air between the suspended film and the substrate layer 5. The lower the air pressure in the cavity, the less heat is conducted through the air, that is, the better the thermal insulation of the suspended film, the lower the sensitivity of the sensor, and the sensitivity of the sensor can be adjusted by adjusting the air pressure of the packaging cavity to achieve measurement of different beam energy ranges.

[0054] Further preferably, the material of the heat absorption film 61 is one or a combination of two or more of titanium nitride, titanium, silicon oxide or silicon nitride.

[0055] Further preferably, Figure 3 As shown, the heat absorption film 61 includes: a conductive heat absorption layer 611 and a non-conductive heat absorption layer 612 stacked in sequence from top to bottom. Among them, the non-conductive heat absorption layer 612 is used to contact the thermosensitive conductive film 62. Among them, the material of the conductive heat absorption layer 611 is a superposition of one or more of titanium nitride or titanium. The non-conductive heat absorption layer 612 is a superposition of one or more of silicon oxide or silicon nitride. Through the cooperation of the conductive heat absorption layer 611 and the non-conductive heat absorption layer 612, absorption of the entire wavelength and some specific wavelengths can be achieved. In addition, there can be multiple conductive heat absorption layers 611 and non-conductive heat absorption layers 612, and they can be alternately stacked from top to bottom.

[0056] For example, the conductive heat absorption layer 611 has a certain absorption (broad spectrum absorption) for all wavelengths of light waves, and its absorption spectrum is related to factors such as the conductivity of the material and the thickness of the film. Typically, when the square resistance of the conductive heat absorption layer 611 is 377 ohms, the maximum absorption (about 50%) can be achieved. When the non-conductive heat absorption layer 612 uses silicon oxide, silicon nitride, silicon, etc. as the dielectric (insulating) material, it only absorbs light waves of specific wavelengths. For example, silicon mainly absorbs ultraviolet, visible light and near-infrared bands, and silicon oxide and silicon nitride mainly absorb long-wave infrared bands.

[0057] As a preferred method, Figure 4As shown, in this embodiment, silicon oxide constitutes the conductive heat absorption layer 611a, silicon constitutes the non-conductive heat absorption layer 612a, silicon nitride constitutes the conductive heat absorption layer 611b, and titanium nitride constitutes the non-conductive heat absorption layer 612b. Among them, the conductive heat absorption layer 611a, the non-conductive heat absorption layer 612a, the conductive heat absorption layer 611b and the non-conductive heat absorption layer 612b are sequentially stacked from top to bottom to form a composite film 6. Therefore, through the sequential and alternating cooperation of multiple conductive heat absorption layers and non-conductive heat absorption layers, a wide spectrum absorption response from ultraviolet to long-wave infrared bands can be achieved, that is, all the light beam energies in the above ranges can be absorbed by the sensor's heat absorption film 61 and converted into heat for output.

[0058] Further preferably, the material of the heat absorption film 61 is one or a combination of two or more of doped amorphous silicon, vanadium oxide, titanium oxide or titanium.

[0059] Further preferably, the doped amorphous silicon is boron-doped amorphous silicon.

[0060] Further preferably, the resistance temperature coefficient of the thermosensitive conductive film 62 is a positive resistance temperature coefficient or a negative resistance temperature coefficient.

[0061] For example, when the material of the thermosensitive conductive film 62 is one of doped amorphous silicon, vanadium oxide, and titanium oxide, such as boron-doped amorphous silicon, its resistance decreases as the temperature of the material rises (negative temperature coefficient of resistance). When the material of the thermosensitive conductive film 62 is vanadium oxide or titanium oxide, it is similar, with a negative temperature coefficient of resistance. Metal titanium is a thermosensitive material with positive resistance temperature absorption, and its resistance increases as the temperature of the material rises. By using a thermosensitive material with negative (or positive) resistance temperature absorption, in conjunction with circuit signal processing, the change in the film temperature can be converted into an electrical signal output, thereby realizing the corresponding light beam detection.

[0062] Further preferably, the air pressure in the cavity of the packaging shell is 0.1Pa-100Pa or 100Pa~100000Pa, so that the cavity of the packaging shell can reduce the thermal conductivity between the pixel array structure, the thermosensitive conductive film and the substrate layer under low vacuum or medium vacuum, that is, the thermal conductivity is small, thereby improving the adjustment accuracy of the sensitivity of the sensor of the beam analyzer and the measurement of different beam energy ranges. Obviously, it should be noted that the air pressure in the cavity of the packaging shell in this embodiment can also be 100000Pa~1000000Pa to achieve gas packaging under normal pressure, and reduce the packaging cost while controlling the thermal conductivity within the target range.

[0063] In addition, it is worth mentioning that the air pressure in the cavity of the packaging shell in this embodiment can also be designed to be a high vacuum or ultra-high vacuum state according to actual needs. For example, the air pressure in the cavity of the packaging shell is less than 0.1Pa.

[0064] In addition, as a preferred method, the cavity of the packaging shell in this embodiment can be filled with gas, wherein the gas is an inert gas or nitrogen, etc. Compared with the method of filling air, it can better reduce the thermal conductivity between the pixel array structure, the thermosensitive conductive film and the substrate layer, thereby improving the adjustment accuracy of the sensitivity of the sensor of the beam analyzer and the measurement of different beam energy ranges.

[0065] As a further preferred embodiment, in order to meet the design requirements in practical applications, the above-mentioned packaging window includes: a light-transmitting layer 2. Among them, the material of the light-transmitting layer 2 is one of optical glass, sapphire, zinc selenide, zinc sulfide, barium fluoride, magnesium fluoride, calcium fluoride, silicon, germanium or a combination thereof. Through the packaging window, the spectral range can be penetrated across multiple (two or more) regions in the visible light, near infrared, short-wave infrared, medium-wave infrared, and long-wave infrared bands, which is used to seal and protect the sensor and select the spectral interval required for detection. Specifically, when the material of the sealing window is selected as quartz glass, the light speed from ultraviolet to short-wave infrared (300nm-3000nm) can be penetrated. When the material of the sealing window is selected as zinc selenide or zinc sulfide, the light beams of all bands from visible light to far infrared (500nm--15000nm) can be penetrated.

[0066] Further preferably, the light-transmitting layer 3 is a neutral attenuation sheet so as to uniformly attenuate light with wavelengths in a wide spectral range from ultraviolet to infrared, so as to control the energy of the incident light beam and achieve measurement of different light beam energy ranges.

[0067] Embodiment 2

[0068] This embodiment provides a sensor for a beam profiler. This embodiment is substantially the same as the above embodiment, except that: Figure 5 As shown, the sensor of the beam analyzer also includes: a reflective film 9 arranged above the substrate layer 5, which is used to reflect at least part of the light beam passing through the composite film 6 onto the composite film 6.

[0069] The light beam transmitted through the composite film is reflected back by the reflective film 9, thereby increasing the heat absorption efficiency of the heat absorption film in the composite film.

[0070] Further preferably, the reflective film 9 is disposed on the upper surface of the reflective film 9 or the upper surface of the sensing unit 41 .

[0071] Embodiment 3

[0072] This embodiment provides a sensor for a beam profiler. This embodiment is a further improvement on the above embodiment. The improvement is as follows: Figure 6As shown, the packaging window further includes: a filter coating layer 10 covering the light-transmitting layer 2. The filter coating layer 10 is an anti-reflection film or a band-pass film. The anti-reflection film or the band-pass film can achieve an optimized selection of the transmittance spectrum.

[0073] Embodiment 4

[0074] The present embodiment provides a sensor for a beam profiler. The present embodiment is substantially the same as any of the above embodiments, except that at least one of the heat absorbing films 61 of the composite film 6 comprises a conductive heat absorbing layer 611; at least a portion of the heat absorbing films of the composite film is composed of a non-conductive heat absorbing layer 612, and the materials of the non-conductive heat absorbing layers 612 in each heat absorbing film are different.

[0075] The conductive heat-absorbing layer absorbs light waves of most wavelengths to a certain extent, that is, wide-spectrum absorption, and converts them into corresponding electrical signals. At the same time, the non-conductive heat-absorbing layers made of different materials absorb different specific wavelengths and convert them into corresponding electrical signals. Therefore, the collected electrical signal data can be analyzed to identify different spectra, especially the electrical signal recognition of spectra in different wavelength ranges. Therefore, a sensor can be used to detect and identify a wide spectrum, greatly reducing the detection cost.

[0076] For example, the conductive heat absorption layer of one of the composite films is composed of silicon nitride. The conductive heat absorption layer of one of the composite films is composed of titanium. The non-heat absorption layer of one of the composite films uses quartz glass, the non-heat absorption layer of one of the composite films uses zinc selenide, the non-heat absorption layer of one of the composite films uses zinc selenide, and the non-heat absorption layer of one of the composite films uses silicon oxide.

[0077] Further preferably, there can be multiple composite films composed of non-heat-absorbing layers, with at least two of them being made of the same material and at least two of them being made of different materials, so that while identifying spectra of different wavelengths, the same spectrum can be calibrated through non-heat-absorbing layers of the same material.

[0078] In addition, by differential analysis of the electrical signal converted by the conductive heat absorption layer and the electrical signal converted by the non-heat absorption layer, specific wavelengths not absorbed by the non-heat absorption layer can be identified, thereby saving costs and simplifying processes and structures.

[0079] Embodiment 5

[0080] This embodiment provides a sensor for a beam profiler. This embodiment is substantially the same as any of the above embodiments. The difference is that, Figure 7As shown, the composite film 6 is a whole covering the upper part of each sensing unit 41 and forms a corresponding electrical connection. There are multiple thermosensitive conductive films 62 in the composite film, which are electrically connected to the corresponding sensing units 41 respectively, and two adjacent thermosensitive conductive films 62 are spaced apart to avoid short circuit.

[0081] As a further preferred embodiment, the thermosensitive conductive film 62 in this embodiment also adopts an array layout, which corresponds one to one with the array layout of the sensing units.

[0082] Embodiment 6

[0083] This embodiment provides a sensor for a beam profiler. This embodiment is substantially the same as any of the above embodiments. The difference is that, Figure 8 As shown, there are multiple composite films 6, and an independent closed space 51 is formed between each composite film 6 and the corresponding substrate layer 5 for filling with gas to independently adjust the thermal conductivity between each composite film 6 and the corresponding substrate layer 5.

[0084] Specifically, after a corresponding groove is opened on the substrate layer, an independent closed space is formed after the composite film 6 covers the substrate layer 5 and is filled with gas.

[0085] Further preferably, in order to facilitate the structural layout of the circuit on the substrate layer 5 , the substrate layer 5 may be composed of a base layer 5 a , a matrix layer 5 b disposed on the base layer 5 a and having a groove, etc., wherein the groove is used to form a closed space 51 .

[0086] Obviously, it should be noted that a closed cavity structure is also provided between the composite film 6 and the corresponding substrate layer 5 in this embodiment, for example, protrusions or heat insulating components that can form a cavity are provided on the substrate layer to form the above-mentioned closed space 51.

[0087] Embodiment 7

[0088] This embodiment further provides a light beam profiler, comprising: the sensor of the light beam profiler in any one of the above embodiments.

[0089] The above is only a preferred embodiment of the present invention and does not limit the present invention in any way. Any technician in the relevant technical field, without departing from the scope of the technical solution of the present invention, makes any form of equivalent replacement or modification to the technical solution and technical content disclosed in the present invention, which does not depart from the content of the technical solution of the present invention and still falls within the protection scope of the present invention.

Claims

1. A sensor for a beam profiler, characterized in that: include: Pixel array structure; A composite film disposed above the pixel array structure; Wherein, the composite film at least comprises: a heat-absorbing film and a thermosensitive conductive film arranged in sequence from top to bottom; The heat absorbing film is used to absorb incident light in a target wavelength range, convert the energy of the incident light into heat and cause a temperature change of the thermosensitive conductive film; The thermosensitive conductive film is electrically connected to the pixel array structure and is used to convert its own temperature change into an electrical signal and output it to the pixel array structure to obtain the corresponding incident light intensity.

2. The sensor of the beam profiler according to claim 1, characterized in that Also includes: A packaging shell having a sealed cavity and an electrical connection channel, wherein the pixel array structure and the composite film are arranged in the sealed cavity; A packaging window is arranged on the packaging shell, wherein the packaging window is used to transmit light of any two or more wavebands among visible light, near infrared, short-wave infrared, medium-wave infrared or long-wave infrared.

3. The sensor of the beam profiler according to claim 1, characterized in that The composite film is suspended above the pixel array structure, and a heat-insulating space is formed between the composite film and the pixel array structure.

4. The sensor of the beam profiler according to claim 3, characterized in that The pixel array structure comprises: a substrate layer, and sensing units distributed in an array and arranged on the substrate layer; the composite film is one or more, and is respectively arranged on the corresponding sensing units and electrically connected.

5. The sensor of the beam profiler according to claim 1, characterized in that Each induction unit is provided with a supporting component for being suspended and electrically connected to the composite film; wherein the supporting component comprises: a positive electrode connecting component and a negative electrode connecting component.

6. The sensor of the beam profiler according to claim 1, characterized in that The positive electrode connecting component and the negative electrode connecting component are respectively arranged at opposite ends of the induction unit; wherein the supporting component is a slender beam component.

7. The sensor of the beam profiler according to claim 1, characterized in that The suspension height between the composite film and the pixel array structure is 0-10 um.

8. The sensor of the beam profiler according to claim 1, characterized in that The heat absorption film comprises: a conductive heat absorption layer and a non-conductive heat absorption layer stacked in sequence from top to bottom; wherein the non-conductive heat absorption layer is used to contact the thermosensitive conductive film.

9. The sensor of the beam profiler according to claim 1, characterized in that The conductive heat absorption layer is made of titanium nitride or titanium, or a combination of two or more thereof; the non-conductive heat absorption layer is made of silicon oxide or silicon nitride, or a combination of two or more thereof.

10. The sensor of the beam profiler according to claim 1, characterized in that The resistance temperature coefficient of the thermosensitive conductive film is a positive resistance temperature coefficient or a negative resistance temperature coefficient.

11. The sensor of the beam profiler according to claim 1, characterized in that: The material of the thermosensitive conductive film is any one of doped amorphous silicon, vanadium oxide, titanium oxide or titanium or a combination thereof.

12. The sensor of the beam profiler according to claim 4, characterized in that It also includes: a reflective film arranged above the substrate layer, which is used to reflect at least part of the light beam passing through the composite film onto the composite film.

13. The sensor of the beam profiler according to claim 2, characterized in that: The air pressure in the cavity of the packaging shell is any one of 0.1Pa-100Pa, 100Pa-100000Pa, or 100000Pa-1000000Pa; Alternatively, the cavity of the packaging shell is filled with gas, wherein the gas is an inert gas or nitrogen.

14. The sensor of the beam profiler according to claim 2, characterized in that: The packaging window includes: a light-transmitting layer; wherein the material of the light-transmitting layer is one of optical glass, sapphire, zinc selenide, zinc sulfide, barium fluoride, magnesium fluoride, calcium fluoride, silicon, germanium or a combination thereof.

15. The sensor of the beam profiler according to claim 14, characterized in that The packaging window further comprises: a light filter coating layer covering the light-transmitting layer; wherein the light filter coating layer is an anti-reflection film or a bandpass film; And / or the light-transmitting layer is a neutral attenuation sheet.

16. The sensor of the beam profiler according to claim 3, characterized in that There are at least a plurality of composite films, wherein at least one composite film's heat absorption film comprises a conductive heat absorption layer; at least a portion of the composite film's heat absorption films are composed of non-conductive heat absorption layers, and the non-conductive heat absorption layers in each heat absorption film are made of different materials.

17. A beam profiler, characterized in that: include: A sensor for a beam profiler as claimed in any one of claims 1 to 16.

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