Controlling iron and magnetic slurries in semiconductor components

Abstract

The present disclosure discloses a substrate and a method for an electronic circuit system. A substrate for an electronic circuit system includes a ferromagnetic material and a paste positioned proximate to the ferromagnetic material. The slurry includes a plurality of magnets. The plurality of magnets may be spherical magnets. The slurry may include gallium and / or bismuth.

Description

[0001] Related Applications

[0002] This application is a continuation-in-part of U.S. application No. 18 / 447,793 filed on August 10, 2023, the contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments described herein relate generally to semiconductor components in computers or other electronic devices and, in embodiments, but not by way of limitation, to controlling iron pastes and / or controlling pastes containing one or more magnetic bodies associated with semiconductor components. Background Art

[0004] Gallium-tin-indium alloy (Galinstan) is the product name of an alloy consisting of gallium, indium and tin that is widely used in semiconductor components. It consists of 68.5% Ga, 21.5% In and 10.0% Sn (by weight), melts at -19°C (-2°F), and is therefore liquid at room temperature. However, it is not a eutectic alloy, but a near-eutectic alloy. In scientific literature, Galinstan is also used as an acronym for the eutectic composition of Ga-In-Sn alloy, which melts near +11°C (52°F). The composition of the two alloys is roughly the same, but as a commercial technology product of the company, Galinstan may have flux added to improve fluidity, reduce melting temperature, and reduce surface tension. Therefore, the physical properties of Galinstan and the pure eutectic alloy EGaInSn are slightly different. Due to the low toxicity and low reactivity of its constituent metals, Galinstan has replaced toxic liquid mercury or reactive NaK (sodium potassium) alloys in many applications.

[0005] When using Galinstan in semiconductor assemblies, it is difficult to apply to printed circuit boards (PCBs). In some cases, the application of Galinstan can short-circuit the processor and the system board. In addition, thermal cycling may cause some Galinstan to escape from the interface between the heat sink and the chip, which can cause serious damage to the processor pins and the circuit board. In addition, Galinstan can be corrosive to metals, so unprotected aluminum heat sinks cannot be used with it. In addition, coatings and dams are used to protect and prevent free Galinstan from moving around on the circuit board. Summary of the invention

[0006] The present disclosure provides a substrate for an electronic circuit system, comprising: a ferromagnetic material; and a slurry positioned near the ferromagnetic material, the slurry comprising a plurality of magnets. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] In the accompanying drawings, which are not necessarily drawn to scale, similar reference numerals may describe similar components in different views. Similar reference numerals with different letter suffixes may represent different instances of similar components. Some embodiments are shown by way of example and not limitation in the figures of the accompanying drawings.

[0008] Figure 1 Embodiments of substrates, electronic circuitry, magnets, and ferromagnetic paste are shown.

[0009] Figure 2 An embodiment of a method of applying a ferromagnetic paste to a semiconductor chip is shown.

[0010] Figure 3 Another method of applying ferromagnetic paste to semiconductor chips is shown.

[0011] Figure 4 Embodiments of a substrate, electronic circuitry, ferromagnetic material, and a paste including a plurality of magnets are shown.

[0012] Figure 5A and Figure 5B An embodiment of a method of applying a slurry including a plurality of magnetic bodies to a semiconductor chip is shown.

[0013] Figure 6 Another embodiment of a method of applying a slurry including a plurality of magnetic bodies to a semiconductor chip is shown. DETAILED DESCRIPTION

[0014] In an embodiment, a slurry of iron powder and Galinstan in a magnetic field increases the viscosity of the slurry, thereby facilitating the inclusion of Galinstan when manufacturing semiconductors. The thermal conductivity of iron is 2.5 times that of Galinstan, so the slurry of iron powder and Galinstan directly improves the thermal interface compared to using Galinstan alone. Ferromagnets are embedded in the heat sink to keep the iron-Galinstan slurry in the desired position and reduce the tendency to escape from the interface. In another embodiment, magnets are placed around the heat sink and act as a barrier. This method of suppression still allows thermal expansion and contraction at the interface. In an embodiment, neodymium magnets are used, and these magnets do not interfere with normal computer operations. In another embodiment, magnets are placed under the processor to protect the plane of the processor from penetration of the Galinstan iron slurry.

[0015] In another embodiment, in a semiconductor manufacturing process, one or more magnets are placed in a liquid or slurry containing Galliston and / or bismuth, and the liquid or slurry is extruded or otherwise placed on a substrate. The substrate includes one or more portions of strategically placed ferromagnetic material. The liquid containing the magnet interacts with the ferromagnetic material to control the placement of the liquid on the substrate during the semiconductor manufacturing process. The ferromagnetic material can be embedded in a heat sink to keep the Galinstan magnet slurry in a desired position and reduce the tendency to escape from the interface. In another embodiment, the ferromagnetic material can be separated from the heat sink and placed around the heat sink, thereby acting as a barrier. This method of suppression still allows thermal expansion and contraction at the interface. In another embodiment, neodymium magnets are used in the slurry, and these magnets do not interfere with normal computer operations. In another embodiment, the ferromagnetic material is placed under the processor to protect the plane of the processor from penetration by the Galinstan magnet slurry.

[0016] Figure 1 An example embodiment of a system 100 for controlling an iron slurry in a semiconductor component is shown. Silicon 120 is deposited on a substrate 110. In an embodiment, the substrate is a printed circuit board (PCB). A ferromagnetic liquid or slurry 130 is placed on the silicon 120. In an embodiment, the ferromagnetic slurry includes one or more of iron, indium, and gallium. The iron can be in the form of iron powder. A heat sink or heat pipe 140 is positioned on the ferromagnetic slurry 130, and a magnet 150 is positioned on the heat sink 140. In another embodiment, the magnet 140 is embedded in the heat pipe or heat sink 140. In another embodiment, the magnet 140 can be positioned below the silicon 120. As described above, and as Figure 2 and Figure 3 As described in further detail in , this arrangement allows for controlled placement of the iron paste on the semiconductor chip.

[0017] Figure 2 and Figure 3 Example embodiments of systems and methods for controlling the application of a ferromagnetic slurry to a substrate are shown. Figure 2 and Figure 3 The invention comprises a plurality of processing blocks and feature blocks 210 to 230 and 300 to 304A respectively. Figure 2 and Figure 3 In the example of , the blocks are arranged substantially serially, but other examples may reorder the blocks, omit one or more blocks, and / or execute two or more blocks in parallel using multiple processors or a single processor organized as two or more virtual machines or sub-processors.

[0018] Now refer specifically to Figure 2, at 210, a ferromagnetic liquid is received, obtained and / or fixed, and at 220, a substrate is received, obtained and / or fixed. The ferromagnetic liquid may include iron powder (211). The iron powder increases the viscosity of the ferromagnetic liquid in the presence of a magnetic field. The ferromagnetic liquid may include one or more of iron powder and gallium (212). The substrate includes an electronic circuit system and one or more magnets. In a specific embodiment, the substrate is a printed circuit board (PCB) (221). One or more magnets can be positioned at one or more edges of the heat sink (222) based on the determined placement of the ferromagnetic liquid on the substrate. One or more magnets can be positioned below the processor on the substrate (223). The positioning of the one or more magnets below the processor on the substrate protects the plane of the processor (223A). At 230, the ferromagnetic liquid is applied to the substrate.

[0019] Now refer to Figure 3 , at 300, a ferromagnetic liquid is applied to a substrate. The substrate includes an electronic circuit system (301), and in a specific embodiment, the substrate is a printed circuit board (301A). As shown at 302, the substrate includes one or more magnets, and further as shown at 302A, one or more magnets can be embedded in a heat sink. The ferromagnetic liquid is applied at the interface between the silicon chip and the heat sink (303). In an embodiment, the ferromagnetic liquid includes one or more of iron and gallium (304). As shown at 304A, the iron can be a powder. The iron powder increases the viscosity of the ferromagnetic liquid in the presence of a magnetic field.

[0020] Figure 4 An example embodiment of a system 400 for controlling a slurry including multiple magnets in a semiconductor component is shown. Silicon 120 is deposited on a substrate 110. In an embodiment, the substrate is a printed circuit board (PCB). A thermal interface material (TIM) such as a liquid or slurry 430 containing one or more magnets is placed on the silicon 120. The slurry 430 may also contain gallium or bismuth. A heat sink or heat pipe 140 is positioned on the magnet slurry 430, and a ferromagnetic material 450 is positioned on the heat sink 140. The ferromagnetic material 450 may include additional magnets. In another embodiment, the ferromagnetic material 450 is embedded in the heat pipe or heat sink 140. In another embodiment, the ferromagnetic material 450 may be positioned below the silicon 120. As described above, and as shown in Figures 5 and Figure 6 As described in further detail in , this arrangement allows for controlled placement of the magnetic paste on the semiconductor chip.

[0021] Embodiments disclosed herein describe the generation of a magnetic field on one side or the other of a thermal interface. Figure 4 , Figure 5A , Figure 5B and Figure 6In embodiments, weaker magnets may be placed on either side of the thermal interface to minimize the overall magnetic field and increase the spacing between the two sides of the thermal interface. Spherical and / or BB type 1 mm rare earth magnets may be used in the slurry, and additional magnets may be used in the heat sink as an iron frame. The gap between the magnets in the heat sink and the thermal interface may then be increased, and / or the strength of the magnets in the heat sink may be reduced. These techniques and structures may minimize the magnetic field associated with magnetizing liquid metals or slurries, or these techniques and structures may be used to maximize the distance between the thermal interface and the heat sink magnetic material.

[0022] In the disclosed embodiments, any magnet can be used, depending primarily on the required field strength, shape, polarity, and maximum temperature of the application. Ordinary neodymium iron boride magnets plated with nickel are sufficient. The arrangement can be bar magnets in or on a heat sink, and small spherical magnets in a thermal interface. A typical thermal interface is 100 microns to 200 microns. In an embodiment, a 1 mm spherical NdFeB magnet is placed in the thermal interface, and a 2.6 mm thick, 1 inch diameter disk NdFeB magnet is placed in the heat sink, with a spacing of 1 mm between the two magnets, oriented in the same north-south direction. The spheres can be oriented by themselves. The surface field strength of these magnets is in the range of 1400 to 1600 Gauss for a flat surface of a disk, and in the range of 10 to 50 Gauss for a 1 mm sphere.

[0023] Figure 5A , Figure 5B and Figure 6 Example embodiments of systems and methods for controlling application of a slurry including a plurality of magnets to a substrate are shown. Figure 5A , Figure 5B and Figure 6 The invention comprises a plurality of processing blocks and feature blocks 510 to 534 and 610 to 614 respectively. Figure 5A , Figure 5B and Figure 6 In the example of , the blocks are arranged substantially serially, but other examples may reorder the blocks, omit one or more blocks, and / or execute two or more blocks in parallel using multiple processors or a single processor organized as two or more virtual machines or sub-processors.

[0024] Now refer to Figure 5A and Figure 5B At 510, a slurry including a plurality of magnets is received, obtained, and / or secured. The slurry may include one or more of gallium and bismuth (512).

[0025] At 520, a substrate is received, acquired and / or secured. The substrate includes an electronic circuit system and a ferromagnetic material. The ferromagnetic material may include iron and / or one or more of one or more second magnets (522). The one or more second magnets may be positioned in a heat sink or adjacent to the silicon die, which reduces the magnetic field outside the substrate (522A). Positioning the one or more second magnets in a heat sink or adjacent to the silicon die may also increase the distance between the plurality of magnets in the slurry and the one or more second magnets (522B), and may also confine the slurry to the interface between the silicon die and the heat sink (522C).

[0026] At 530, the slurry is applied to the substrate. The ferromagnetic material may be positioned at one or more edges of the heat sink according to the determined placement of the slurry on the substrate, as described at 532. As shown at 534, the ferromagnetic material may be positioned below the processor on the substrate, thereby protecting the plane of the processor.

[0027] Now refer to Figure 6 At 610, a slurry including one or more magnets is applied to a substrate. As shown at 612, the substrate includes electronic circuitry, and as shown at 614, the substrate includes ferromagnetic material.

[0028] The above detailed description includes reference to the accompanying drawings, which form a part of the detailed description. The accompanying drawings show specific embodiments that can be put into practice by way of illustration. These embodiments are also referred to as "examples" in this article. Such examples may include elements other than the elements shown or described. However, examples including the elements shown or described are also contemplated. In addition, examples (or one or more aspects of the examples) using any combination or arrangement of those elements shown or described are also contemplated with respect to a specific example (or one or more aspects of a specific example) or with respect to other examples (or one or more aspects of other examples) shown or described herein.

[0029] Publications, patents, and patent documents cited in this document are incorporated herein by reference in their entirety, as if individually incorporated by reference. In the event of an inconsistency between the usages of this document and those so incorporated by reference, the usage in the incorporated reference(s) supplements that of this document; for conflicting inconsistencies, the usage in this document controls.

[0030] In this document, as is common in patent literature, the terms "a" or "an" are used to include one or more than one, regardless of any other instances or uses of "at least one" or "one or more". In this document, unless otherwise indicated, the term "or" is used to refer to a non-exclusive or, such that "A or B" includes "A but not B", "B but not A", and "A and B". In the appended claims, the terms "including" and "in which" are used as the plain English equivalents of the respective terms "comprising" and "wherein". In addition, in the appended claims, the terms "including" and "comprising" are open-ended, that is, systems, devices, articles, or processes that include elements other than those listed after such terms in a claim are still considered to fall within the scope of the claim. In addition, in the appended claims, the terms "first", "second", and "third", etc. are used only as labels and are not intended to imply a numerical order of their objects.

[0031] The above description is intended to be illustrative rather than restrictive. For example, the above examples (or one or more aspects thereof) may be used in combination with other examples. For example, a person of ordinary skill in the art may use other embodiments after reading the above description. The abstract enables the reader to quickly determine the nature of the technical disclosure. The abstract is submitted based on the following understanding, that is, the abstract will not be used to interpret or limit the scope or meaning of the claims. In addition, in the above specific embodiments, various features may be combined together to organize the present disclosure. However, the claims may not set forth each feature disclosed herein, because the embodiments may be characterized by a subset of the features. In addition, the embodiments may include fewer features than those disclosed in a particular example. Therefore, the attached claims are incorporated into the specific embodiments here, wherein the claims themselves exist as separate embodiments. The scope of the embodiments disclosed herein is to be determined with reference to the attached claims and the full scope of equivalents given by these claims.

[0032] Example

[0033] The first example is a substrate for an electronic circuit system, comprising: one or more magnets; and a ferromagnetic liquid positioned near the one or more magnets.

[0034] The second example includes all of the features of the first example, and optionally includes a substrate comprising a printed circuit board (PCB).

[0035] The third example includes all features of the first to second examples, and optionally includes a substrate, wherein the ferromagnetic liquid is positioned at the interface between the silicon chip and the heat sink.

[0036] The fourth example includes all of the features of the first to third examples, and optionally includes a substrate, wherein the ferromagnetic liquid includes one or more of iron and gallium.

[0037] The fifth example includes all of the features of the first to fourth examples, and optionally includes a substrate, wherein the iron includes iron powder.

[0038] The sixth example includes all of the features of the first to fifth examples, and optionally includes a substrate, wherein one or more magnets are embedded in a heat sink.

[0039] The seventh example includes all features of the first to sixth examples, and optionally includes a substrate, wherein the magnet is positioned below the silicon chip.

[0040] Example 8 is a method comprising: receiving a ferromagnetic liquid; receiving a substrate comprising an electronic circuit system and one or more magnets; and applying the ferromagnetic liquid to the substrate.

[0041] A ninth example includes all of the features of the eighth example, and optionally includes a method, wherein the ferromagnetic liquid contains iron powder, and wherein the iron powder increases the viscosity of the ferromagnetic liquid.

[0042] A tenth example includes all of the features of the eighth to ninth examples, and optionally includes a method, wherein one or more magnets are positioned at one or more edges of the heat sink based on a determined placement of the ferromagnetic fluid on the substrate.

[0043] An 11th example includes all of the features of the 8th to 10th examples, and optionally includes the method, wherein the one or more magnets are positioned below the processor on the substrate.

[0044] A twelfth example includes all of the features of the eighth to eleventh examples, and optionally includes a method, wherein positioning one or more magnets below a processor on a substrate protects a flat surface of the processor.

[0045] The 13th example includes all of the features of the 8th to 12th examples, and optionally includes the method, wherein the ferromagnetic liquid includes one or more of iron powder and gallium.

[0046] The 14th example includes all of the features of the 8th to 13th examples, and optionally includes the method, wherein the substrate includes a printed circuit board (PCB).

[0047] Example 15 is a method comprising: applying a ferromagnetic liquid to a substrate; wherein the substrate comprises an electronic circuit system; and wherein the substrate comprises one or more magnets.

[0048] A sixteenth example includes all of the features of the fifteenth example, and optionally includes the method, wherein the substrate comprises a printed circuit board (PCB).

[0049] A seventeenth example includes all of the features of the fifteenth to sixteenth examples, and optionally includes a method, wherein a ferromagnetic liquid is applied at an interface between the silicon chip and the heat sink.

[0050] The 18th example includes all of the features of the 15th to 17th examples, and optionally includes the method, wherein the ferromagnetic liquid includes one or more of iron and gallium.

[0051] The 19th example includes all of the features of the 15th to 18th examples, and optionally includes the method, wherein the iron comprises powder, and the iron powder increases the viscosity of the ferromagnetic liquid in the presence of a magnetic field.

[0052] A 20th example includes all of the features of the 15th to 19th examples, and optionally includes a method, wherein the one or more magnets are embedded in a heat sink.

[0053] Example 1A is a substrate for an electronic circuit system, comprising: a ferromagnetic material; and a slurry positioned near the ferromagnetic material, the slurry comprising a plurality of magnets.

[0054] Example 2A includes all of the features of Example 1A and optionally includes a substrate, wherein the substrate includes a printed circuit board (PCB).

[0055] Example 3A includes all of the features of Examples 1A to 2A, and optionally includes a substrate, wherein the slurry is positioned at an interface between the silicon die and the heat spreader.

[0056] Example 4A includes all of the features of Examples 1A to 3A, and optionally includes a substrate, wherein the ferromagnetic material includes one or more of iron and / or one or more second magnets.

[0057] Example 5A includes all of the features of Examples 1A to 4A, and optionally includes a substrate, wherein one or more second magnets are positioned in a heat sink or adjacent to the silicon die to reduce the magnetic field external to the substrate.

[0058] Example 6A includes all of the features of Examples 1A to 5A, and optionally includes a substrate, wherein the one or more second magnets are positioned in a heat sink or adjacent to the silicon die, thereby increasing the distance between the multiple magnets and the one or more second magnets.

[0059] Example 7A includes all of the features of Examples 1A to 6A, and optionally includes a substrate, wherein one or more second magnets are positioned in the heat sink or adjacent to the silicon die, thereby confining the slurry to the interface between the silicon die and the heat sink.

[0060] Example 8A includes all of the features of Examples 1A to 7A, and optionally includes a substrate, wherein the ferromagnetic material is embedded in the heat sink.

[0061] The 9A example includes all of the features of the 1A to 8A examples, and optionally includes a substrate, wherein the ferromagnetic material is positioned below the silicon die.

[0062] Example 10A includes all of the features of Examples 1A to 9A and optionally includes a substrate, wherein the paste includes one or more of gallium and bismuth.

[0063] The 11A example includes all of the features of the 1A to 10A examples, and optionally includes a substrate, wherein the plurality of magnets includes a plurality of spherical magnets.

[0064] Example 12A is a method of receiving a slurry comprising a plurality of magnetic bodies; receiving a substrate comprising electronic circuitry and a ferromagnetic material; and applying the slurry to the substrate.

[0065] The 13A example includes all of the features of the 12A example, and optionally includes a method, wherein the ferromagnetic material is positioned at one or more edges of the heat sink according to a determined placement of the paste on the substrate.

[0066] Example 14A includes all of the features of Examples 12A to 13A, and optionally includes a method, wherein a ferromagnetic material is positioned below a processor on a substrate to protect a plane of the processor.

[0067] Example 15A includes all of the features of Examples 12A to 14A, and optionally includes a method, wherein the ferromagnetic material includes one or more of iron and / or one or more second magnets.

[0068] Example 16A includes all of the features of Examples 12A to 15A, and optionally includes a method, wherein one or more second magnets are positioned in a heat sink or adjacent to the silicon die to reduce the magnetic field external to the substrate.

[0069] Example 17A includes all of the features of Examples 12A to 16A, and optionally includes a method, wherein one or more second magnets are positioned in a heat sink or adjacent to the silicon die, thereby increasing the distance between the multiple magnets and the one or more second magnets.

[0070] The 18A example includes all of the features of the 12A to 17A examples, and optionally includes a method, wherein one or more second magnets are positioned in the heat sink or adjacent to the silicon die to confine the slurry to an interface between the silicon die and the heat sink.

[0071] The 19A example includes all of the features of the 12A to 18A examples, and optionally includes the method, wherein the paste includes one or more of gallium and bismuth.

[0072] Example 20A is a method comprising: applying a slurry comprising a plurality of magnets to a substrate; wherein the substrate comprises an electronic circuit system; and wherein the substrate comprises a ferromagnetic material.

Claims

1. A substrate for an electronic circuit system, comprising: Ferromagnetic materials; as well as A slurry is positioned adjacent to the ferromagnetic material, the slurry comprising a plurality of magnets.

2. The substrate according to claim 1, wherein The substrate includes a printed circuit board (PCB).

3. The substrate according to claim 1, wherein The slurry is positioned at the interface between the silicon die and the heat sink.

4. The substrate according to claim 1, wherein The ferromagnetic material includes one or more of iron and / or one or more second magnets.

5. The substrate according to claim 4, wherein The one or more second magnets are positioned in a heat sink or adjacent to the silicon die to reduce the magnetic field external to the substrate.

6. The substrate according to claim 4, wherein The one or more second magnets are positioned in a heat sink or adjacent to the silicon die, thereby increasing a distance between the plurality of magnets and the one or more second magnets.

7. The substrate according to claim 4, wherein The one or more second magnets are positioned in a heat sink or adjacent to the silicon die to confine the slurry to an interface between the silicon die and the heat sink.

8. The substrate according to claim 1, wherein The ferromagnetic material is embedded in the heat sink.

9. The substrate according to claim 8, wherein The ferromagnetic material is positioned beneath the silicon die.

10. The substrate according to claim 1, wherein The paste includes one or more of gallium and bismuth.

11. The substrate according to claim 1, wherein The plurality of magnets includes a plurality of spherical magnets.

12. A method comprising: receiving a slurry including a plurality of magnets; receiving a substrate comprising electronic circuitry and a ferromagnetic material; as well as The slurry is applied to the substrate.

13. The method according to claim 12, wherein: The ferromagnetic material is positioned at one or more edges of the heat sink according to a determined placement of the paste on the substrate.

14. The method according to claim 12, wherein: The ferromagnetic material is positioned below the processor on the substrate to protect the plane of the processor.

15. The method according to claim 12, wherein: The ferromagnetic material includes one or more of iron and / or one or more second magnets.

16. The method according to claim 15, wherein: The one or more second magnets are positioned in a heat sink or adjacent to the silicon die to reduce the magnetic field external to the substrate.

17. The method according to claim 15, wherein: The one or more second magnets are positioned in a heat sink or adjacent to the silicon die, thereby increasing a distance between the plurality of magnets and the one or more second magnets.

18. The method according to claim 15, wherein: The one or more second magnets are positioned in a heat sink or adjacent to the silicon die to confine the slurry to an interface between the silicon die and the heat sink.

19. The method according to claim 12, wherein: The paste includes one or more of gallium and bismuth.

20. A method comprising: applying a slurry including a plurality of magnets to a substrate; wherein the substrate comprises an electronic circuit system; and Wherein, the substrate comprises ferromagnetic material.

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