Passive frequency conversion structure and method for generating two paths of time-varying signals based on transistor

Abstract

The invention discloses a passive frequency conversion structure and method for generating two paths of time-varying signals based on a transistor. The passive frequency conversion structure comprises an input impedance matching network, a time-varying tuning circuit, a source resonance circuit, a drain resonance circuit, a source output impedance matching network and a drain output impedance matching network. The input impedance matching network performs impedance conversion on a microwave input signal; the time-varying tuning circuit modulates an input signal into two paths of time-varying tuning signals; the source resonance circuit and the drain resonance circuit can respectively screen the tuning signals to obtain resonant frequency signals; source and drain output impedance matching networks enable the resonant frequency signal to be output at maximum efficiency. By utilizing the characteristic that the capacitance values of the junction capacitance between the gate and the drain and the junction capacitance between the gate and the source of the transistor change along with the change of the voltage loaded at the two ends of the transistor, two paths of time-varying reactance circuits are formed in combination with external inductors, two paths of passive frequency conversion signals are creatively generated based on one transistor, and the application prospect is wide.

Description

Technical Field

[0001] The present invention relates to the field of electronic information technology, and in particular to a passive frequency conversion structure and method for generating two-way time-varying signals based on transistors. Background Art

[0002] With the rapid development of wireless communication, microwave sensing and Internet of Things technology, passive wireless technology has been widely used in wireless sensor networks, intelligent monitoring, structural health monitoring and Internet of Things due to the fact that it does not require external power drive. However, existing passive wireless technology still has many limitations in signal processing efficiency, multi-path signal generation and adaptability to complex environments.

[0003] Traditional passive frequency conversion technology is based on the nonlinear characteristics of semiconductor mixers. It can only achieve frequency conversion of a single channel by mixing the input signal with the local oscillator signal, which is inadequate in multi-target and multi-channel application scenarios.

[0004] Invention patent document CN110247288A (applicant: University of Electronic Science and Technology of China) discloses a room temperature semiconductor maser and its application. This patent uses the drain input signal fp as a pump microwave signal to excite the polaritons in the transistor containing the heterojunction to a high energy level, and then uses the resonant network connected to the gate (resonant frequency is fr) to transition the high energy level polaritons to a specified low energy level, thereby generating an output signal with a frequency of fa = fp - fr. However, due to the limitation of the circuit structure and the energy level of the output signal being lower than the pump signal, only one output signal with a frequency lower than the input signal can be output at the source.

[0005] Invention patent document CN118659760A (applicant: Chengdu Ximengtech Technology Development Co., Ltd.) discloses a passive wireless sensor based on a piezoelectric resonator and a varactor diode. After the semiconductor circuit is excited by a microwave signal, only one frequency conversion signal can be generated without adding a semiconductor circuit.

[0006] Invention patent document CN115940821B (applicant: Chengdu Enyang Technology Co., Ltd.) discloses a passive frequency conversion structure and a passive frequency conversion method. The input signal feeds the microwave signal from the drain into a transistor with a two-dimensional electron gas through an input matching network; the resonant network connected to the source then converges the energy of the fed microwave signal; the microwave signal after energy convergence is then generated into an oscillation signal by a passive crystal / ceramic resonator connected to the gate; thus, micro-frequency conversion can be achieved without a DC power supply through frequency mixing.

[0007] Invention patent document CN118573122A (applicant: Zhejiang Longgan Technology Co., Ltd.) discloses a passive frequency conversion structure, sensor, method and system, which uses the electron migration channel in the modulation element to establish a signal transmission channel without DC bias, so that the fed microwave signal is transmitted between ports. The first resonant circuit is used for energy convergence, and the second resonant circuit realizes the conversion or amplification of the signal frequency, thereby improving the energy utilization rate and signal transmission efficiency.

[0008] Among them, the passive frequency conversion structure disclosed in the invention patent document CN118573122A and the invention patent document CN115940821B can only be input through a fixed port, and the connection method between the resonant network or resonator and the modulation element (or the transistor with a two-dimensional electron gas) is fixed. For example, in CN115940821B, the signal is input through the drain of the transistor with a two-dimensional electron gas after passing through the input matching network, the source is connected to the resonant network, and the gate is connected to the passive piezoelectric resonator. The invention patent document CN118573122A is similar thereto. Such a connection method can only output one frequency conversion signal, which limits its application scenarios.

[0009] Furthermore, the frequency conversion methods mentioned in the invention patent documents CN118573122A and the invention patent document CN115940821B have more complex circuit structures and relatively limited application flexibility. These two patent documents require that the source electrode is connected to a resonant network (or a first resonant circuit) for energy convergence of the input microwave signal, and the gate electrode is connected to a passive piezoelectric resonator (or a second resonant circuit) for generating an oscillation signal for the input microwave signal and feeding the oscillation signal into a transistor with a two-dimensional electron gas, in order to achieve the effect of passive frequency conversion.

[0010] With the rapid development of wireless sensor networks and multifunctional composite sensors, there is an urgent need for a frequency conversion circuit that can generate multi-channel frequency conversion signals and has more flexible connection methods and circuit structures in order to open up the application market of passive wireless frequency conversion technology. However, most existing technologies are limited to single-path signal output. If multi-channel signals are to be generated, it is usually necessary to introduce additional complex circuit structures, which increases the difficulty of system design. In addition, traditional passive frequency conversion systems are highly dependent on the environment. In complex electromagnetic environments or high-noise scenarios, the reliability and stability of the signal are easily affected, limiting their application in harsh environments. Summary of the invention

[0011] In order to solve the above problems, the present invention proposes a passive frequency conversion structure and method for generating two time-varying signals based on transistors, which innovatively realizes the generation of two frequency conversion signals based on one transistor, overcomes the power consumption and channel limitation problems of traditional technologies, significantly improves the energy utilization efficiency and environmental adaptability of the system, and provides a new technical solution for complex application scenarios.

[0012] The technical solution adopted by the present invention is as follows: A passive frequency conversion structure for generating two-way time-varying signals based on transistors, comprising an input impedance matching network, a time-varying tuning circuit, a source resonant circuit, a drain resonant circuit, a source output impedance matching network and a drain output impedance matching network; the time-varying tuning circuit comprises an inductor and a transistor, the gate of the transistor is connected to the input impedance matching network through the inductor, the source is respectively connected to the source resonant circuit and the source output impedance matching, and the drain is respectively connected to the drain resonant circuit and the drain output impedance matching network; The input impedance matching network is configured to receive an input signal and allow the input signal to enter the time-varying tuning circuit at maximum power; the time-varying tuning circuit is configured to generate two time-varying tuning signals based on the characteristics of the gate-source junction capacitance and gate-drain junction capacitance of the transistor changing with the loading voltage, and combined with the inductor; the source resonant circuit and the drain resonant circuit can respectively filter the tuning signals to obtain resonant frequency signals; the source output impedance matching network and the drain output impedance matching network can at least enable the resonant frequency signal to be output at maximum efficiency.

[0013] Furthermore, the output impedance matching of the source output impedance matching network and the drain output impedance matching network can be configured separately or simultaneously as the following modes: Mode 1: the source output impedance matching network performs output matching on the resonant frequency signal generated by the source resonant circuit, and the drain output impedance matching network performs output matching on the resonant frequency signal generated by the drain resonant circuit; Mode 2: The source output impedance matching network performs output matching on the mixed frequency signal after the resonant frequency signal generated by the source resonant circuit is mixed with the input signal, and the drain output impedance matching network performs output matching on the mixed frequency signal after the resonant frequency signal generated by the drain resonant circuit is mixed with the input signal.

[0014] Furthermore, in mode 1, the output signal of the source output impedance matching network includes a signal having a resonant frequency corresponding to the resonant frequency of the source resonant circuit. The same signal, the output signal of the drain output impedance matching network includes the resonant frequency of the drain resonant circuit Same signal; In mode 2, the resonant frequency of the source resonant circuit is The same signal will be reflected back to the transistor, and due to the nonlinear characteristics of the transistor, gain amplification and the Menley-Lowe formula, the resonant frequency is The signal and frequency are The input signal is mixed and amplified to generate a mixing frequency signal and output from the source output impedance matching network; the resonant frequency of the drain resonant circuit The same signal will be reflected back to the transistor, and due to the nonlinear characteristics of the transistor, gain amplification and the Menley-Lowe formula, the resonant frequency is The signal and frequency are The input signal is mixed and amplified to generate a mixing frequency signal and output from the drain output impedance matching network.

[0015] Furthermore, in Mode 2: When the resonant frequency of the source resonant circuit When the mixing frequency signal Able to output through an input impedance matching network; wherein Q is the quality factor of the input impedance matching network; When the resonant frequency of the drain resonant circuit When the mixing frequency signal Can be output through input impedance matching network.

[0016] Furthermore, the source output impedance matching network and the drain output impedance matching network can output the same or different signals: When the resonant frequency of the source resonant circuit Equal to the resonant frequency of the drain resonant circuit When , the source output impedance matching network and the drain output impedance matching network output the same signal; When the resonant frequency of the source resonant circuit Not equal to the resonant frequency of the drain resonant circuit When , the source output impedance matching network and the drain output impedance matching network output different signals.

[0017] Furthermore, the source resonant circuit and the drain resonant circuit include an LC resonant circuit or an equivalent resonant circuit, the equivalent resonant circuit includes a transducer and a circuit structure consisting of a transducer and a capacitor and an inductor, and the transducer includes a piezoelectric resonator, a surface acoustic wave resonator or a bulk acoustic wave resonator.

[0018] Furthermore, the transistor types of the time-varying tuning circuit include bipolar transistors and unipolar transistors, the types of the bipolar transistors include NPN transistors and PNP transistors, and the types of the unipolar transistors include JFET junction field effect transistors, MOSFET metal oxide field effect transistors and MODFET modulation doped field effect transistors.

[0019] Furthermore, the source resonant circuit, the drain resonant circuit, the source output impedance matching network and the drain output impedance matching network can be configured simultaneously, or only the source resonant circuit and the source output impedance matching network can be configured, or only the drain resonant circuit and the drain output impedance matching network can be configured.

[0020] Furthermore, when the input signal is a microwave AC signal, the direction and magnitude of its voltage and current change periodically with time, and there is no special requirement for the directionality of the junction capacitance. Therefore, the input signal can be input from the gate direction of the transistor in the time-varying tuning circuit, or from the drain or source direction of the transistor in the time-varying tuning circuit without affecting the signal transmission performance or the overall function.

[0021] A passive frequency conversion method for generating two-way time-varying signals based on transistors, comprising: receiving an input signal through an input impedance matching network and allowing the input signal to enter the time-varying tuning circuit at maximum power; The time-varying tuning circuit is based on the characteristics that the gate-source junction capacitance and the gate-drain junction capacitance of the transistor vary with the loading voltage, and combines the inductor to generate two time-varying tuning signals; the gate of the transistor is connected to the input impedance matching network through the inductor, the source is respectively connected to the source resonance circuit and the source output impedance matching, and the drain is respectively connected to the drain resonance circuit and the drain output impedance matching network; The tuning signal is screened by a source resonant circuit and a drain resonant circuit to obtain a resonant frequency signal; The resonant frequency signal is output at maximum efficiency through a source output impedance matching network and a drain output impedance matching network.

[0022] The beneficial effects of the present invention are: 1. By innovatively utilizing the characteristics of the transistor gate-source and gate-drain junction capacitances changing with the loading voltage, and combining with external inductors to form two time-varying reactance circuits, efficient frequency conversion is achieved without DC power drive, breaking through the limitation of traditional passive frequency conversion technology on single-path signals, and being able to generate two independent time-varying signals at the same time, significantly improving the system's signal processing capabilities, and providing a more efficient solution for multi-target, multi-channel applications in complex scenarios.

[0023] 2. By properly configuring the resonant frequencies of the source and drain resonant circuits, the frequency purity of the output signal is significantly improved, reducing the spectrum distortion caused by nonlinear effects. Combined with the optimized design of the matching network, the system can maintain signal stability and consistency while efficiently converting frequencies, thereby maintaining excellent performance in complex electromagnetic environments or high-noise scenarios.

[0024] 3. The structural design is simple and flexible. The multi-channel signal generation capability of a single transistor significantly reduces the complexity and manufacturing cost of the circuit and is easy to integrate with other circuits. It provides a more economical and efficient solution for later large-scale production and deployment applications.

[0025] In summary, the present invention has broad application potential in the fields of wireless communication, Internet of Things, structural health monitoring, smart agriculture, etc. By effectively improving signal processing efficiency and environmental adaptability, the present invention not only overcomes many limitations of the prior art, but also provides technical support for the design of emerging multifunctional composite sensors and wireless systems in complex scenarios, and has important industrial value. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 This is a principle block diagram of a passive frequency conversion structure based on transistors to generate two time-varying signals according to Embodiment 1 of the present invention.

[0027] Figure 2 This is a circuit diagram of a passive frequency conversion structure for generating two time-varying signals based on transistors according to Embodiment 1 of the present invention.

[0028] Figure 3 This is a principle block diagram of a passive frequency conversion structure for generating two time-varying signals based on transistors according to Embodiment 2 of the present invention.

[0029] Figure 4 This is a circuit diagram of a passive frequency conversion structure for generating a time-varying signal based on a transistor according to Embodiment 2 of the present invention.

[0030] Figure 5 This is a principle block diagram of a passive frequency conversion structure based on transistors to generate time-varying signals according to Embodiment 3 of the present invention.

[0031] Figure 6 This is a circuit diagram of a passive frequency conversion structure for generating a time-varying signal based on a transistor according to Embodiment 3 of the present invention.

[0032] Figure 7 This is one of the principle block diagrams of the passive frequency conversion structure based on transistors to generate time-varying signals according to Embodiment 4 of the present invention.

[0033] Figure 8 This is one of the circuit diagrams of the passive frequency conversion structure for generating a time-varying signal based on a transistor according to the fourth embodiment of the present invention.

[0034] Fig. 9 This is the second principle block diagram of the passive frequency conversion structure based on transistors to generate time-varying signals according to the fourth embodiment of the present invention.

[0035] Fig.10 This is the second circuit diagram of the passive frequency conversion structure based on transistors to generate time-varying signals according to the fourth embodiment of the present invention. DETAILED DESCRIPTION

[0036] In order to have a clearer understanding of the technical features, purposes and effects of the present invention, the specific implementation methods of the present invention are now described. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention, that is, the embodiments described are only part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present invention.

[0037] Example 1 like Figure 1 As shown, this embodiment provides a passive frequency conversion structure for generating two time-varying signals based on transistors, including an input impedance matching network, a time-varying tuning circuit, a source resonant circuit, a drain resonant circuit, a source output impedance matching network, and a drain output impedance matching network; the time-varying tuning circuit includes an inductor and a transistor, the gate of the transistor is connected to the input impedance matching network through the inductor, the source is respectively connected to the source resonant circuit and the source output impedance matching, and the drain is respectively connected to the drain resonant circuit and the drain output impedance matching network.

[0038] Among them, the input impedance matching network is configured to receive the input signal and allow the input signal to enter the time-varying tuning circuit with maximum power; the time-varying tuning circuit is configured to generate two time-varying tuning signals based on the characteristics of the gate-source junction capacitance and gate-drain junction capacitance of the transistor changing with the loading voltage, and combined with the inductor; the source resonant circuit and the drain resonant circuit can respectively filter the tuning signal to obtain the resonant frequency signal; the source output impedance matching network and the drain output impedance matching network can at least enable the resonant frequency signal to be output with maximum efficiency.

[0039] It should be noted that the inductance of the time-varying tuning circuit can be an external actual inductance or a parasitic inductance in the circuit.

[0040] The specific implementation circuit of this embodiment is as follows Figure 2 As shown, the input impedance matching network is composed of inductor L2 and inductor L7, the time-varying tuning circuit is composed of inductor L1 and transistor Q, the source and drain resonant circuits are configured as parallel LC circuits composed of capacitors and inductors, the drain output impedance matching network is composed of inductor L5 and capacitor C3, and the source output impedance matching network is composed of inductor L6 and capacitor C4.

[0041] Among them, inductors L2 and L7 make the frequency input from port Port1 to be The maximum power of the microwave signal is fed into the gate of transistor Q. Due to the gate-source junction capacitance of transistor Q and gate-drain junction capacitance Equivalent to a varactor diode, it complies with the following formula:

[0042] In the formula, Represents the gate-source junction capacitance or gate-drain capacitance , is the junction capacitance when the reverse bias voltage is zero, is the reverse bias voltage, is the barrier voltage of the transistor junction capacitance, is a constant coefficient.

[0043] Therefore, by utilizing the characteristic that the capacitance of the internal junction capacitance of transistor Q changes with the voltage loaded at both ends, combined with inductor L1, two time-varying tuning signals are generated at the source and drain of transistor Q. The signal contains a rich spectrum. The resonant frequency of the source and drain resonant circuit is configured to be and In the time-varying tuned signal, the high-frequency signal will go from the capacitor to the ground, and the low-frequency signal will go from the inductor to the ground, and the resonant frequency of the resonant circuit is and Signals within a certain bandwidth will be retained in the circuit. The source and drain output impedance matching networks are configured to match the output of the resonant frequency signal of the source and drain resonant circuit. The resonant frequency is and Signals within a certain bandwidth will be output from Port3 and Port2.

[0044] Preferably, if the source and drain output impedance matching networks are configured to match the output of the mixed frequency signal after the resonant frequency of the source and drain resonant circuits is mixed with the input microwave signal frequency, the resonant frequency is and The signal will be reflected back to the transistor. According to the nonlinear characteristics of the transistor, gain amplification and the Menley-Lowe formula, the resonant frequency is and The signal with frequency The input microwave signal is mixed and amplified to generate a mixed frequency signal Output from the source output impedance matching network port Port3; mixing frequency signal Output from port Port2 of the drain output impedance matching network.

[0045] Preferably, if the source output impedance matching is not configured, and the resonant frequency of the source resonant circuit is (in is the frequency of the input microwave signal, Q is the quality factor of the input impedance matching network), then the mixing frequency signal It can be output from port Port1 through the input impedance matching network.

[0046] Preferably, if the drain output impedance matching is not configured, and the resonant frequency of the drain resonant circuit is (in is the frequency of the input microwave signal, Q is the quality factor of the input impedance matching network), then the mixing frequency signal It can be output from port Port1 through the input impedance matching network.

[0047] Preferably, the drain resonant circuit and the gate resonant circuit can use transducers such as piezoelectric resonators, surface acoustic wave resonators or bulk acoustic wave resonators, and the inherent resonant frequency of the transducer should be or .

[0048] It should be noted that due to the difference between the gate-drain junction capacitance and the gate-source junction capacitance, the circuit turn-on operating threshold will change.

[0049] Accordingly, this embodiment also provides a passive frequency conversion method for generating two time-varying signals based on transistors, comprising the following steps: receiving an input signal through an input impedance matching network and allowing the input signal to enter the time-varying tuning circuit at maximum power; The time-varying tuning circuit is based on the characteristics that the gate-source junction capacitance and the gate-drain junction capacitance of the transistor change with the loading voltage, and combines the inductor to generate two time-varying tuning signals; the gate of the transistor is connected to the input impedance matching network through the inductor, the source is respectively connected to the source resonance circuit and the source output impedance matching, and the drain is respectively connected to the drain resonance circuit and the drain output impedance matching network; The tuning signal is screened through the source resonant circuit and the drain resonant circuit to obtain a resonant frequency signal; The resonant frequency signal is output with maximum efficiency through the source output impedance matching network and the drain output impedance matching network.

[0050] Example 2 like Figure 3 As shown, this embodiment provides a passive frequency conversion structure for generating two time-varying signals based on transistors, including an input impedance matching network, a time-varying tuning circuit, a drain resonant circuit, and a drain output impedance matching network.

[0051] The specific implementation circuit of this embodiment is as follows Figure 4 As shown, the input impedance matching network is composed of inductors L2 and L5, the time-varying tuning circuit is composed of inductor L1 and transistor Q, the drain resonant circuit is configured as a parallel LC circuit composed of capacitor C1 and inductor L3, and the drain output impedance matching network is composed of inductor L4 and capacitor C2.

[0052] Among them, inductors L2 and L5 make the frequency input from port Port1 to be The maximum power of the microwave signal is fed into the gate of transistor Q. Due to the gate-drain junction capacitance of transistor Q Equivalent to a varactor diode, it complies with the following formula:

[0053] In the formula, is the junction capacitance when the reverse bias voltage is zero, is the reverse bias voltage, is the barrier voltage of the transistor junction capacitance, is a constant coefficient.

[0054] Therefore, by utilizing the characteristic that the capacitance of the transistor gate-drain junction capacitance changes with the voltage applied across it, combined with the inductive impedance characteristics exhibited by the input impedance matching, a time-varying tuning signal is generated at the drain of the transistor, which contains a rich spectrum. The resonant frequency of the drain resonant circuit is configured to be In the time-varying harmonic wave, the high-frequency signal will go from the capacitor to the ground, and the low-frequency signal will go from the inductor to the ground, which is consistent with the resonant frequency of the resonant circuit. The signal within a certain bandwidth will be retained in the circuit, and the drain output impedance matching network is configured to match the output of the resonant frequency signal of the drain resonant circuit, then the resonant frequency Signals within a certain bandwidth will be output from port Port2.

[0055] Preferably, if the drain output impedance matching network is configured to match the output of the mixed frequency signal after the resonant frequency of its drain resonant circuit is mixed with the input microwave signal frequency, the resonant frequency is The signal will be reflected back to the transistor. According to the nonlinear characteristics of the transistor, gain amplification and the Menley-Lowe formula, the resonant frequency is The signal with frequency The input microwave signal is mixed and amplified to generate a mixed frequency signal Output from the source output impedance matching network port Port2.

[0056] Preferably, if the drain output impedance matching is not configured, and the resonant frequency of the drain resonant circuit is (in is the frequency of the input microwave signal, Q is the quality factor of the input impedance matching network), then the mixed The mixed signal can be output from port Port1 through the input impedance matching network.

[0057] Preferably, the drain resonant circuit can use a transducer such as a piezoelectric resonator, a surface acoustic wave resonator or a bulk acoustic wave resonator, and the inherent resonant frequency of the transducer should be .

[0058] It should be noted that in this embodiment, the source of the transistor Q in the time-varying tuning circuit is suspended, the overall structural design is simple and flexible, the multi-channel signal generation capability of a single transistor significantly reduces the complexity and manufacturing cost of the circuit, and is easy to integrate with other circuits.

[0059] Example 3 like Figure 5 As shown, this embodiment provides a passive frequency conversion structure for generating two time-varying signals based on transistors, including an input impedance matching network, a time-varying tuning circuit, a source surface acoustic wave resonator, and a source output impedance matching network.

[0060] The specific implementation circuit of this embodiment is as follows Figure 6 As shown, the input impedance matching network is composed of inductor L3 and C1, the time-varying tuning circuit is composed of inductor L1 and transistor Q, and the resonant frequency of the source surface acoustic wave resonator X1 is , the source output matching network consists of inductor L2 and capacitor C2.

[0061] Among them, the inductor L3 and C1 make the frequency input from port Port1 to be The maximum power of the microwave signal is fed into the gate of transistor Q. Due to the gate-source junction capacitance of transistor Q Equivalent to a varactor diode, it complies with the following formula:

[0062] In the formula, is the junction capacitance when the reverse bias voltage is zero, is the reverse bias voltage, is the barrier voltage of the transistor junction capacitance, is a constant coefficient.

[0063] Therefore, by utilizing the characteristic that the capacitance of the transistor gate-source junction capacitance changes with the voltage applied to both ends, combined with the inductive impedance characteristics exhibited by the input impedance matching, a time-varying tuning signal is generated at the source of the transistor, and the signal contains a rich spectrum. The time-varying tuning wave is above and below the resonant frequency of the source surface acoustic wave resonator X1. The signal will flow back to the ground through X1, and the resonant frequency of X1 Signals within a certain bandwidth will be retained in the circuit, and the source output impedance matching network is configured to match the resonant frequency of its surface acoustic wave resonator X1. The output of the signal matches the resonant frequency Signals within a certain bandwidth will be output from port Port2.

[0064] Preferably, if the source output impedance matching network is configured to match the output of the mixed frequency signal after the resonant frequency of the source surface acoustic wave resonator is mixed with the input microwave signal frequency, the resonant frequency is The signal will be reflected back to the transistor. According to the nonlinear characteristics of the transistor, gain amplification and the Menley-Lowe formula, the resonant frequency is The signal with frequency The input microwave signal is mixed and amplified to generate a mixed frequency signal The output is output from port Port2 through the source output impedance matching network.

[0065] Preferably, the source resonant circuit may be an LC resonant circuit, a piezoelectric resonator or a bulk acoustic wave resonator.

[0066] Preferably, if the source output impedance matching is not configured, and the resonant frequency of the source resonant circuit is (in is the frequency of the input microwave signal, Q is the quality factor of the input impedance matching network), then the mixed The mixed signal can be output from port Port1 through the input impedance matching network.

[0067] It should be noted that in this embodiment, the drain of the transistor Q in the time-varying tuning circuit is suspended, the overall structural design is simple and flexible, the multi-channel signal generation capability of a single transistor significantly reduces the complexity and manufacturing cost of the circuit, and is easy to integrate with other circuits.

[0068] Example 4 On the basis of Example 2, considering that the input signal is a microwave AC signal, the direction and magnitude of its voltage and current change periodically over time, so the junction capacitance is a passive device related to the transient voltage. Specifically, the capacitance value of the junction capacitance is determined only by the instantaneous bias voltage, and it mainly plays the role of parasitic capacitance in the microwave signal propagation process, and exhibits a non-directional impedance characteristic for signal transmission. Therefore, there is no special requirement for the directionality of the junction capacitance, and the connection mode of the input impedance matching network and the gate, drain, and source of the transistor Q in Example 2 can be flexibly exchanged without affecting the signal transmission performance or the overall function of the circuit.

[0069] like Figure 7 The passive frequency conversion structure based on transistors to generate time-varying signals in this embodiment is shown as follows. After the input microwave signal passes through the input impedance matching network, the inductor L1 and the transistor's drain-gate junction capacitance will also generate a tuning signal with a rich spectrum and time-varying performance by utilizing the characteristic that the capacitance of the transistor's drain-gate junction capacitance changes with the voltage loaded on both ends. Figure 8As shown, the input impedance matching network is composed of inductors L2 and L5, the time-varying tuning circuit is composed of inductor L1 and transistor Q, the gate resonant circuit is configured as a parallel LC circuit composed of capacitor C1 and inductor L3, and the gate output impedance matching network is composed of inductor L4 and capacitor C2. Similar to Example 2, this embodiment can also output microwave signals of different frequencies from port Port1 by configuring different gate output impedance matching networks. Among them, the source of transistor Q in the time-varying tuning circuit is suspended, the overall structural design is simple and flexible, and the multi-channel signal generation capability of a single transistor significantly reduces the complexity and manufacturing cost of the circuit, and is easy to integrate with other circuits.

[0070] It should be noted that the input microwave signal can also be directly fed into the source of the transistor after passing through the input impedance matching network and the inductor, such as Fig. 9 Another passive frequency conversion structure based on transistors to generate time-varying signals according to this embodiment is shown in FIG. Fig.10 Among them, the drain of the transistor Q in the time-varying tuning circuit is suspended, the overall structural design is simple and flexible, the multi-channel signal generation capability of a single transistor significantly reduces the complexity and manufacturing cost of the circuit, and is easy to integrate with other circuits.

[0071] Preferably, if the gate output impedance matching is not configured, and the resonant frequency of the gate resonant circuit is (in is the frequency of the input microwave signal, Q is the quality factor of the input impedance matching network), then the mixed The mixed signal can be output from port Port1 through the input impedance matching network.

[0072] The above is only a preferred embodiment of the present invention. It should be understood that the present invention is not limited to the form disclosed herein, and should not be regarded as excluding other embodiments, but can be used in various other combinations, modifications and environments, and can be modified within the scope of the concept described herein through the above teachings or the technology or knowledge of the relevant field. The changes and modifications made by those skilled in the art shall not deviate from the spirit and scope of the present invention, and shall be within the scope of protection of the claims attached to the present invention.

Claims

1. A passive frequency conversion structure based on transistors to generate two-way time-varying signals, characterized in that: It includes an input impedance matching network, a time-varying tuning circuit, a source resonant circuit, a drain resonant circuit, a source output impedance matching network, and a drain output impedance matching network; the time-varying tuning circuit includes an inductor and a transistor, the gate of the transistor is connected to the input impedance matching network through the inductor, the source is respectively connected to the source resonant circuit and the source output impedance matching, and the drain is respectively connected to the drain resonant circuit and the drain output impedance matching network; The input impedance matching network is configured to receive an input signal and allow the input signal to enter the time-varying tuning circuit at maximum power; the time-varying tuning circuit is configured to generate two time-varying tuning signals based on the characteristics of the gate-source junction capacitance and the gate-drain junction capacitance of the transistor changing with the loading voltage and in combination with the inductor; The source resonant circuit and the drain resonant circuit can respectively filter the tuning signal to obtain a resonant frequency signal; the source output impedance matching network and the drain output impedance matching network can at least enable the resonant frequency signal to be output with maximum efficiency.

2. According to claim 1, a passive frequency conversion structure based on transistors to generate two-way time-varying signals is characterized in that: The output impedance matching of the source output impedance matching network and the drain output impedance matching network can be configured separately or simultaneously as the following modes: Mode 1: the source output impedance matching network performs output matching on the resonant frequency signal generated by the source resonant circuit, and the drain output impedance matching network performs output matching on the resonant frequency signal generated by the drain resonant circuit; Mode 2: The source output impedance matching network performs output matching on the mixed frequency signal after the resonant frequency signal generated by the source resonant circuit is mixed with the input signal, and the drain output impedance matching network performs output matching on the mixed frequency signal after the resonant frequency signal generated by the drain resonant circuit is mixed with the input signal.

3. The passive frequency conversion structure based on transistors to generate two-way time-varying signals according to claim 2, characterized in that: In mode 1, the output signal of the source output impedance matching network includes a signal having a resonant frequency corresponding to the source resonant circuit. The same signal, the output signal of the drain output impedance matching network includes the resonant frequency of the drain resonant circuit Same signal; In mode 2, the resonant frequency of the source resonant circuit is The same signal will be reflected back to the transistor, and due to the nonlinear characteristics of the transistor, gain amplification and the Menley-Lowe formula, the resonant frequency is The signal and frequency are The input signal is mixed and amplified to generate a mixing frequency signal and output from the source output impedance matching network; the resonant frequency of the drain resonant circuit The same signal will be reflected back to the transistor, and due to the nonlinear characteristics of the transistor, gain amplification and the Menley-Lowe formula, the resonant frequency is The signal and frequency are The input signal is mixed and amplified to generate a mixing frequency signal and output from the drain output impedance matching network.

4. The passive frequency conversion structure based on transistors to generate two-way time-varying signals according to claim 3, characterized in that: In mode 2, when the resonant frequency of the source resonant circuit is When the mixing frequency signal Can be output through the input impedance matching network; when the resonant frequency of the drain resonant circuit When the mixing frequency signal It can be output through an input impedance matching network; where Q is the quality factor of the input impedance matching network.

5. A passive frequency conversion structure based on transistors for generating two-way time-varying signals according to any one of claims 2 to 4, characterized in that: The source output impedance matching network and the drain output impedance matching network can output the same or different signals; When the resonant frequency of the source resonant circuit Equal to the resonant frequency of the drain resonant circuit When , the source output impedance matching network and the drain output impedance matching network output the same signal; When the resonant frequency of the source resonant circuit Not equal to the resonant frequency of the drain resonant circuit When , the source output impedance matching network and the drain output impedance matching network output different signals.

6. The passive frequency conversion structure based on transistors to generate two-way time-varying signals according to claim 1, characterized in that: The source resonant circuit and the drain resonant circuit include an LC resonant circuit or an equivalent resonant circuit, the equivalent resonant circuit includes a transducer and a circuit structure consisting of a transducer and a capacitor and an inductor, and the transducer includes a piezoelectric resonator, a surface acoustic wave resonator or a bulk acoustic wave resonator.

7. The passive frequency conversion structure based on transistors to generate two-way time-varying signals according to claim 1, characterized in that: The transistor types of the time-varying tuning circuit include bipolar transistors and unipolar transistors. The types of the bipolar transistors include NPN transistors and PNP transistors. The types of the unipolar transistors include JFET junction field effect transistors, MOSFET metal oxide field effect transistors and MODFET modulation doped field effect transistors.

8. The passive frequency conversion structure based on transistors to generate two-way time-varying signals according to claim 1, characterized in that: The source resonant circuit, drain resonant circuit, source output impedance matching network and drain output impedance matching network can be configured simultaneously, or only the source resonant circuit and the source output impedance matching network can be configured, or only the drain resonant circuit and the drain output impedance matching network can be configured.

9. The passive frequency conversion structure based on transistors to generate two-way time-varying signals according to claim 1, characterized in that: When the input signal is a microwave AC signal, the direction and magnitude of its voltage and current change periodically with time, and there is no special requirement for the directionality of the junction capacitance. Therefore, the input signal can be input from the gate direction of the transistor in the time-varying tuning circuit, or from the drain or source direction of the transistor in the time-varying tuning circuit.

10. A passive frequency conversion method based on transistors to generate two-way time-varying signals, characterized in that: include: receiving an input signal through an input impedance matching network and allowing the input signal to enter the time-varying tuning circuit at maximum power; The time-varying tuning circuit is based on the characteristics that the gate-source junction capacitance and the gate-drain junction capacitance of the transistor vary with the loading voltage, and combines the inductor to generate two time-varying tuning signals; the gate of the transistor is connected to the input impedance matching network through the inductor, the source is respectively connected to the source resonance circuit and the source output impedance matching, and the drain is respectively connected to the drain resonance circuit and the drain output impedance matching network; The tuning signal is screened by a source resonant circuit and a drain resonant circuit to obtain a resonant frequency signal; The resonant frequency signal is output at maximum efficiency through a source output impedance matching network and a drain output impedance matching network.

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