High-isolation, multi-frequency-selectivity, gain-adjustable and high-power switching device

Abstract

The invention provides a high-isolation, multi-frequency-selectivity, gain-adjustable and high-power switching device, which belongs to the technical field of radio frequency communication, and comprises a power amplifier, a circulator, a multi-channel filter bank, a low-noise amplifier, a numerical control attenuator and a power supply control unit, the power supply control unit comprises a first PMOS (P-channel Metal Oxide Semiconductor) chip, a first NMOS (N-channel Metal Oxide Semiconductor) chip, a second PMOS chip and a second NMOS chip, the power supply control unit controls the on-off of power supplies of the power amplifier of the transmitting path and the low-noise amplifier of the receiving path, the multi-channel filter bank screens signals according to signal frequencies, and the numerical control attenuator adjusts the gain of the signals. According to the scheme, multi-frequency selectivity and adjustable gain of the high-power switching device are achieved, the isolation degree of receiving and transmitting channels is improved, and the whole device is built by adopting mature separated components and has high stability.

Description

Technical Field

[0001] The present invention relates to the field of radio frequency communication technology, and in particular to a high-power switch device with high isolation, multi-frequency selectivity and adjustable gain. Background Art

[0002] With the development of radio frequency communication technology, frequency resources are becoming increasingly scarce, and civil and military frequencies overlap and interfere with each other. More and more communication equipment is adopting TDD (time division half-duplex) communication technology, which greatly saves frequency resources by receiving and transmitting in time-sharing mode at the same frequency. The high-power switching device is a very important component of the TDD communication equipment in the radio frequency front end. Since it adopts the time-sharing technology of transmitting and receiving, it requires a high-isolation high-power switching device for control.

[0003] As more and more communication devices are now available, the air frequency pollution is serious. With the development of communication technology, the demand for mobile communication is increasing, especially the communication of high-speed mobile devices, which will affect the real-time adjustment of dynamic gain in high-power switching devices.

[0004] Existing high-power switching devices are basically built with multiple PIN tube chips. Since the PIN tube chip is only 1mm*1mm in size, its reliability is not high. In addition, the isolation of the high-power switching device is limited by the PIN tube chip and will not be very high. Generally, the isolation is only 25dBc. In addition, the existing high-power switching device has no frequency selectivity and it is easy for interference signals to enter the back-end signal processing module, which is not conducive to signal processing. At the same time, the existing high-power switching device also has no gain control function, which makes it easy for excessively large or too small signals to enter the back-end signal processing module, which is not conducive to signal processing. Summary of the invention

[0005] The purpose of the present invention is to overcome the defects of the prior art and provide a high-power switch device with high isolation, multi-frequency selectivity and adjustable gain to solve the problems raised in the above background technology.

[0006] To achieve the above-mentioned object, the present invention provides a high-isolation, multi-frequency selectivity, adjustable-gain high-power switch device, the device comprising a power amplifier, a circulator, a multi-channel filter group, a low-noise amplifier, a digitally controlled attenuator and a power control unit, the power control unit comprising a first PMOS chip, a first NMOS chip, a second PMOS chip and a second NMOS chip;

[0007] The input end of the power amplifier is connected to the output end of the baseband signal processing module, the output end of the power amplifier is connected to the circulator, the circulator is connected to the input end of the multi-channel filter group, and the output end of the multi-channel filter group is connected to the external antenna;

[0008] The circulator is also connected to the input end of the low noise amplifier, the output end of the low noise amplifier is connected to the input end of the digital controlled attenuator, the output end of the digital controlled attenuator is connected to the baseband signal processing module, and the digital controlled attenuator adjusts the signal gain according to the size of the input signal.

[0009] Furthermore, the baseband signal processing module generates a multi-channel filter group control signal and a digitally controlled attenuator gain control signal, the multi-channel filter group control signal controls the multi-channel filter group to open the filter sub-segment corresponding to the frequency of the signal it generates, and the digitally controlled attenuator gain control signal controls the gain value of the digitally controlled attenuator.

[0010] Furthermore, the power control unit controls the opening and closing of the power amplifier and the low noise amplifier. When the baseband signal processing module makes the first control signal at a high level, the first PMOS chip and the first NMOS chip are turned on. At this time, the power supply V1 passes through and supplies power to the power amplifier, so that the power amplifier is in the on state. When the baseband signal processing module makes the second control signal at a low level, the second PMOS chip and the second NMOS chip are cut off. At this time, the power supply V2 cannot pass through and cannot supply power to the low noise amplifier, so that the low noise amplifier is in the off state.

[0011] Furthermore, when the baseband signal processing module makes the first control signal at a low level, the first PMOS chip and the first NMOS chip are cut off. At this time, the power supply V1 cannot pass through and thus cannot power the power amplifier, so that the power amplifier is in an off state. When the baseband signal processing module makes the second control signal at a high level, the second PMOS chip and the second NMOS chip are turned on. At this time, the power supply V2 passes through and thus powers the low noise amplifier, so that the low noise amplifier is in an on state.

[0012] Furthermore, the circulator adopts ferrite magnetic material, which has the characteristics of resisting high power and extremely strong stability.

[0013] Furthermore, the power amplifier, circulator, multi-channel filter group, low noise amplifier, digitally controlled attenuator and power control unit in the device all use separate components, so that the device has high stability and is not easy to be damaged.

[0014] Furthermore, the high-power switch device provided by the present invention includes a transmitting path and a receiving path. When the transmitting path is working, the large signal generated by the baseband signal processing module is input into the power amplifier, the power amplifier amplifies the signal, and inputs the amplified signal into the circulator, and outputs the signal to the multi-channel filter group by using the port directivity of the circulator. The multi-channel filter group opens the corresponding filter sub-segment according to the frequency of the input signal, filters the signal, and the signal filtered by the multi-channel filter group enters the antenna and is radiated out;

[0015] When the receiving path is working, the antenna receives a small signal from the air, and the small signal enters the multi-channel filter group. The multi-channel filter group opens the corresponding filter sub-segment according to the frequency of the input signal, filters out useless signals, and allows useful signals to enter the circulator. The circulator outputs the signal to the low-noise amplifier, which amplifies the signal and enters the digitally controlled attenuator. The digitally controlled attenuator adjusts the signal gain according to the size of the input signal so that the amplitude value of the input small signal meets the signal amplitude value required by the back-end baseband signal processing module.

[0016] Further, when the transmitting path is working, the power control unit turns on the power supply of the power amplifier and turns off the power supply of the low noise amplifier. At this time, the baseband signal processing module makes the first control signal at a high level, so that the first PMOS chip and the first NMOS chip are turned on, so that the power supply V1 passes and then supplies power to the power amplifier, so that the power amplifier is in an on state, and the baseband signal processing module makes the second control signal at a low level, so that the second PMOS chip and the second NMOS chip are turned off, so that the power supply V2 cannot pass and thus cannot supply power to the low noise amplifier, so that the low noise amplifier is in an off state;

[0017] When the receiving path is working, the power control unit turns on the power supply of the low noise amplifier and turns off the power supply of the power amplifier. At this time, the baseband signal processing module makes the first control signal at a low level, so that the first PMOS chip and the first NMOS chip are cut off, so that the power supply V1 cannot pass and cannot supply power to the power amplifier, so that the power amplifier is in a shut-down state. The baseband signal processing module makes the second control signal at a high level, so that the second PMOS chip and the second NMOS chip are turned on, so that the power supply V2 passes and supplies power to the low noise amplifier, so that the low noise amplifier is in an on state.

[0018] The beneficial technical effects of the present invention are:

[0019] The present invention provides a high-isolation, multi-frequency selectivity, and adjustable-gain high-power switch device, which includes a power amplifier, a circulator, a multi-channel filter group, a low-noise amplifier, a digitally controlled attenuator, and a power control unit. The power amplifier and the low-noise amplifier are used to control the transmission and reception of signals, and the multi-channel filter group is used to screen the signals according to the signal frequency, thereby realizing the multi-frequency selectivity of the high-power switch device. At the same time, the gain of the signal is adjusted by the digitally controlled attenuator, thereby realizing the adjustable gain of the high-power switch device. The power control unit is used to control the conduction and cutoff of the PMOS chip and the NMOS chip, thereby realizing the control of the opening and closing of the power amplifier and the low-noise amplifier, so that the high-power switch device has a high degree of isolation. The device of the present invention adopts mature separation components, so that the high-power switch device has a high stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0021] Figure 1 It is a structural schematic diagram of a high-isolation, multi-frequency selectivity, and adjustable-gain high-power switch device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0022] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0023] The present invention provides a high-isolation, multi-frequency selectivity, adjustable gain high-power switch device, such as Figure 1 As shown, the switch device includes a power amplifier, a circulator, a multi-channel filter group, a low noise amplifier, a digitally controlled attenuator and a power control unit. The power control unit includes a first PMOS chip, a first NMOS chip, a second PMOS chip and a second NMOS chip. The power control unit controls the opening and closing of the power amplifier and the low noise amplifier. The external baseband signal processing module is used to generate a useful large signal to enter the high-power switch device and receive a small signal from the high-power switch device, and process the signal. The baseband signal processing module also generates a control signal for the power switch, a control signal for the multi-channel filter group and a control signal for the gain of the digitally controlled attenuator.

[0024] When the transmitting path is working, the large signal generated by the baseband signal processing module is input into the power amplifier, the power amplifier amplifies the signal, and inputs the amplified signal into the circulator, and uses the port directionality of the circulator to output the signal into the multi-channel filter group. The multi-channel filter group opens the corresponding filter sub-segment according to the incoming signal frequency. At this time, the baseband signal processing module generates a multi-channel filter group control signal to control the multi-channel filter group to open the sub-segment filter corresponding to the signal frequency it generates. The signal filtered by the multi-channel filter group enters the antenna and radiates out; when the receiving path is working, the antenna receives a small signal from the air, and the signal enters the multi-channel filter group. The channel filter group and the multi-channel filter group open the corresponding filter sub-segment according to the incoming signal frequency, filter out useless signals and allow useful signals to enter the circulator, and the circulator outputs the signal into the low noise amplifier, and the low noise amplifier amplifies the signal and enters the digital attenuator. The digital attenuator adjusts the signal gain according to the size of the input signal so that the input small signal amplitude value meets the signal amplitude value required by the back-end baseband signal processing module. At this time, the baseband signal processing module generates a digital attenuator gain control signal to control the gain value of the digital attenuator. Usually, the signal entering the baseband signal processing module cannot be too large or too small, so as not to affect its signal processing. Through the above settings, the high-power switch device has multi-frequency selectivity and adjustable gain characteristics.

[0025] When a transmitted signal or a received signal passes through a multi-channel filter group, the multi-channel filter group will only open the sub-segment filter of the useful signal, and other sub-segment filter signals cannot pass through.

[0026] When the transmitting path is working, the power control unit turns on the power supply of the power amplifier and turns off the power supply of the low noise amplifier. At this time, the baseband signal processing module makes the first control signal at a high level, so that the first PMOS chip and the first NMOS chip are turned on, so that the power supply V1 passes and then supplies power to the power amplifier, so that the power amplifier is in an on state. The baseband signal processing module makes the second control signal at a low level, so that the second PMOS chip and the second NMOS chip are turned off, so that the power supply V2 cannot pass and cannot supply power to the low noise amplifier, so that the low noise amplifier is in an off state.

[0027] When the receiving path is working, the power control unit turns on the power supply of the low noise amplifier and turns off the power supply of the power amplifier. At this time, the baseband signal processing module makes the first control signal at a low level, so that the first PMOS chip and the first NMOS chip are cut off, so that the power supply V1 cannot pass and thus cannot power the power amplifier, so that the power amplifier is in a turned-off state. The baseband signal processing module makes the second control signal at a high level, so that the second PMOS chip and the second NMOS chip are turned on, so that the power supply V2 passes and then powers the low noise amplifier, so that the low noise amplifier is in an turned-on state. Through the above method, the high-power switch device has a higher isolation degree, and the isolation degree can reach more than 60dBc.

[0028] The circulator adopts ferrite magnetic material, which has the characteristics of resisting high power and is extremely stable. Ferrite magnetic materials include soft magnetism, hard magnetism, gyromagnetism, torque magnetism and piezomagnetic and other ferrite materials. In this embodiment, soft ferrite is preferred. Typical representatives of soft magnetic materials are manganese zinc ferrite and nickel zinc ferrite. The working principle of the soft ferrite circulator is based on the Faraday rotation effect. When the microwave signal passes through the ferrite magnetic ring, the polarization direction of the signal will rotate due to the action of the magnetic field. Through reasonable magnetic ring design and waveguide structure, unidirectional transmission of the signal can be achieved, that is, the signal can only be input from one port and output from another port, while the reversely transmitted signal is isolated. The soft ferrite circulator includes a ferrite magnetic ring, a waveguide structure, and input and output ports.

[0029] The power amplifier, circulator, multi-channel filter group, low noise amplifier, digitally controlled attenuator and power control unit in the device all use existing discrete components, among which the power control unit uses the existing mature PMOS chip and NMOS chip, so the device has high stability and is not easy to damage.

[0030] Specifically, when the transmitting path is working, the baseband signal processing module generates a large signal input of 0dBm (continuous wave, signal bandwidth 20MHz) and enters the power amplifier. The power amplifier amplifies the input signal to 43 dBm and then inputs it into the circulator. The circulator outputs the signal to a 9-channel filter group. The 9-channel filter group opens the filter sub-segment of the third channel according to the frequency of the incoming signal. The signal filtered by the third sub-segment filter enters the antenna and radiates out. When the receiving path is working, the antenna receives a -90dBm small signal from the air, and the signal enters the multi-channel filter group. The multi-channel filter group opens the corresponding third channel filter sub-segment according to the frequency of the incoming signal, filters out other non-signals, and allows useful signals to enter the circulator. The circulator outputs the signal into the low-noise amplifier. The low-noise amplifier amplifies the signal and enters the digitally controlled attenuator. The gain control range of the digitally controlled attenuator is 0 dB~-31.5dB, with a step of 0.5 dB. The digitally controlled attenuator adjusts the signal gain according to the size of the incoming signal so that the input small signal amplitude value meets the requirements of the back-end baseband signal processing module.

[0031] Specifically, when the transmitting path is working, the power control unit turns on the power supply of the power amplifier and turns off the power supply of the low noise amplifier. At this time, the baseband signal processing module makes the first control signal at a high level of 3.3V, so that the first PMOS chip and the first NMOS chip are turned on, and the power supply V1 passes to supply power to the power amplifier. The baseband signal processing module makes the second control signal at a low level of 0V, so that the second PMOS chip and the second NMOS chip are turned off, and the power supply V2 cannot pass and cannot supply power to the low noise amplifier; when the receiving path is working, the power control unit turns on the power supply of the low noise amplifier and turns off the power supply of the power amplifier. At this time, the baseband signal processing module makes the first control signal at a low level of 0V, so that the first PMOS chip and the first NMOS chip are turned off, and the power supply V1 cannot pass and cannot supply power to the power amplifier. The baseband signal processing module makes the second control signal at a high level of 3.3V, so that the second PMOS chip and the second NMOS chip are turned on, and the power supply V2 passes and supplies power to the low noise amplifier.

[0032] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A high-isolation, multi-frequency selectivity, adjustable gain high-power switch device, characterized in that: The switch device includes a power amplifier, a circulator, a multi-channel filter group, a low noise amplifier, a digitally controlled attenuator and a power control unit, and the power control unit includes a first PMOS chip, a first NMOS chip, a second PMOS chip and a second NMOS chip; The input end of the power amplifier is connected to the output end of the baseband signal processing module, the output end of the power amplifier is connected to the circulator, the circulator is connected to the input end of the multi-channel filter group, and the output end of the multi-channel filter group is connected to the external antenna; The circulator is also connected to the input end of the low noise amplifier, the output end of the low noise amplifier is connected to the input end of the digital controlled attenuator, the output end of the digital controlled attenuator is connected to the baseband signal processing module, and the digital controlled attenuator adjusts the signal gain according to the size of the input signal.

2. The switch device according to claim 1, characterized in that: The baseband signal processing module generates a multi-channel filter bank control signal and a digitally controlled attenuator gain control signal.

3. The switch device according to claim 1, characterized in that: The power control unit controls the opening and closing of the power amplifier and the low noise amplifier. When the baseband signal processing module makes the first control signal at a high level, the first PMOS chip and the first NMOS chip are turned on. At this time, the power supply V1 passes through and supplies power to the power amplifier, so that the power amplifier is in the on state. When the baseband signal processing module makes the second control signal at a low level, the second PMOS chip and the second NMOS chip are cut off. At this time, the power supply V2 cannot pass through and cannot supply power to the low noise amplifier, so that the low noise amplifier is in the off state.

4. The switch device according to claim 3, characterized in that: When the baseband signal processing module makes the first control signal at a low level, the first PMOS chip and the first NMOS chip are cut off. At this time, the power supply V1 cannot pass through and cannot power the power amplifier, so that the power amplifier is in a shutdown state. When the baseband signal processing module makes the second control signal at a high level, the second PMOS chip and the second NMOS chip are turned on. At this time, the power supply V2 passes through and powers the low noise amplifier, so that the low noise amplifier is in an on state.

5. The switch device according to claim 1, characterized in that: The circulator is made of ferrite magnetic material.

6. The switch device according to claim 1, characterized in that: The power amplifier, circulator, multi-channel filter bank, low noise amplifier, digitally controlled attenuator and power control unit all use discrete components.

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