Radio frequency module and electronic equipment

Abstract

The invention relates to a radio frequency module and electronic equipment. The radio frequency module comprises a radio frequency front end module and a radio frequency rear end module, wherein the radio frequency front end module comprises a low-noise amplification module; the radio frequency transceiving chip is connected with the radio frequency front-end module, and the radio frequency transceiving chip is used for determining a first gain level of the low-noise amplification module according to the signal strength of the radio frequency signal received by the low-noise amplification module in the radio frequency signal receiving process; and the controller is connected with the radio frequency transceiver chip, and the controller is used for controlling the first power supply voltage of the low-noise amplification module according to the first gain level. According to the radio frequency module and the electronic equipment provided by the invention, the receiving power consumption of the radio frequency module can be reduced, so that the overall power consumption of the electronic equipment is reduced.

Description

Technical Field

[0001] The present application relates to the field of radio frequency communication technology, and in particular to a radio frequency module and electronic equipment. Background Art

[0002] The RF front-end module is set in the RF module of electronic devices such as mobile phones. The RF front-end module mainly includes PA (Power Amplifier), switch, LNA (Low Noise Amplifier), filter and duplexer and other devices. The external power supply is used to power the PA, LNA, switch and logic unit respectively.

[0003] Taking LNA as an example, currently, an external power supply supplies power to LNA through a constant voltage. However, this method has the problem of high receiving power consumption of the RF module, which in turn leads to high overall power consumption of the electronic device. Summary of the invention

[0004] The embodiments of the present application provide a radio frequency module and an electronic device, which can reduce the receiving power consumption of the radio frequency module, thereby reducing the overall power consumption of the electronic device.

[0005] In a first aspect, a radio frequency module is provided, the radio frequency module comprising:

[0006] A radio frequency front-end module, wherein the radio frequency front-end module includes a low noise amplifier module;

[0007] A radio frequency transceiver chip, the radio frequency transceiver chip is connected to the radio frequency front-end module, and the radio frequency transceiver chip is used to determine the first gain level of the low noise amplifier module according to the signal strength of the radio frequency signal received by the low noise amplifier module during the process of receiving the radio frequency signal;

[0008] A controller is connected to the radio frequency transceiver chip, and is used to control a first supply voltage of the low noise amplifier module according to the first gain level.

[0009] In a second aspect, an electronic device is provided, which includes the radio frequency module as described in the first aspect.

[0010] The beneficial effects brought by the technical solution provided by the embodiment of the present application include at least:

[0011] The RF module of the embodiment of the present application includes an RF front-end module, an RF transceiver chip and a controller. The RF transceiver chip is connected to the RF front-end module, and the controller is connected to the RF transceiver chip. The RF front-end module includes a low-noise amplifier module. The RF transceiver chip is used to determine the first gain level of the low-noise amplifier module according to the signal strength of the RF signal received by the low-noise amplifier module during the process of receiving the RF signal. The controller is used to control the first power supply voltage of the low-noise amplifier module according to the first gain level. In this way, the controller of the embodiment of the present application can flexibly control the first power supply voltage of the low-noise amplifier module according to the first gain level of the low-noise amplifier module. For example, if the first gain level of the low-noise amplifier module is high, the controller can increase the first power supply voltage accordingly. If the first gain level of the low-noise amplifier module is low, the controller can reduce the first power supply voltage accordingly, avoiding the problem of high receiving power consumption of the RF module caused by using a constant voltage to power the low-noise amplifier module at a lower gain level. The controller of the embodiment of the present application can adjust the first power supply voltage of the low-noise amplifier module at different first gain levels according to different first gain levels, thereby reducing the receiving power consumption of the RF module, thereby reducing the overall power consumption of the electronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology description are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0013] Figure 1 This is an internal block diagram of a radio frequency front-end module;

[0014] Figure 2 This is a schematic diagram of the current power supply method of LNA;

[0015] Figure 3 This is a schematic diagram of the internal structure of a radio frequency module in one embodiment of the present application;

[0016] Figure 4 This is a schematic diagram of the internal structure of a radio frequency module in another embodiment of the present application;

[0017] Figure 5 This is a system schematic diagram of a radio frequency module in another embodiment of the present application;

[0018] Figure 6 is a schematic diagram of the internal structure of a first power module;

[0019] Figure 7A comparison diagram of a voltage curve when a constant voltage is used to power the LNA and a voltage curve when a dynamic first power supply voltage is used to power the low noise amplifier module in the present application;

[0020] Figure 8 A loss comparison diagram of using a constant voltage to power the LNA and using a dynamic first power supply voltage to power the low noise amplifier module in the present application;

[0021] Fig. 9 This is a system schematic diagram of a radio frequency module in another embodiment of the present application;

[0022] Fig.10 This is a system schematic diagram of a radio frequency module in another embodiment of the present application;

[0023] Fig.11 This is a schematic diagram of the internal structure of a radio frequency module in another embodiment of the present application. DETAILED DESCRIPTION

[0024] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0025] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0026] It is understood that the terms "first", "second", etc. used in this application may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish a first element from another element. For example, without departing from the scope of this application, a first resistor may be referred to as a second resistor, and similarly, a second resistor may be referred to as a first resistor. Both the first resistor and the second resistor are resistors, but they are not the same resistor.

[0027] It can be understood that the “connection” in the following embodiments should be understood as “electrical connection”, “communication connection”, etc. if the connected circuits, modules, units, etc. have electrical signals or data transmission between each other.

[0028] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. At the same time, the term "and / or" used in this specification includes any and all combinations of the relevant listed items.

[0029] The RF module of electronic devices such as mobile phones is equipped with a RF front-end module (or front-end module or transceiver module). The RF front-end module mainly includes PA (Power Amplifier), switch, LNA (Low Noise Amplifier), filter, duplexer and other devices. These devices are combined to form a RF signal transmission link and a RF signal receiving path. For example, PA is set on the RF signal transmission link, and LNA is set on the RF signal receiving path. Of course, the RF signal transmission link and the RF signal receiving path can also reuse some devices, such as switches. The external power supply is mainly divided into several modules to power PA, LNA, switch and logic unit respectively. See Figure 1 , Figure 1 The internal block diagram of an exemplary RF front-end module.

[0030] See also Figure 2 , Figure 2 The figure is a schematic diagram of the current power supply method of LNA. At present, the external power supply supplies power to LNA through a constant voltage, which means that for different gain levels of LNA (corresponding to strong signals or weak signals), the power supply voltage of LNA is a constant value, and in order to meet different gain levels, the power supply voltage is usually large, which may lead to a situation: at a lower gain level, a large constant voltage is still used to power LNA, which will cause high receiving power consumption of the RF module.

[0031] In addition, taking the electronic device as a terminal as an example, for the terminal, the signal reception process occupies a large proportion of the terminal's usage time. LNA is a core component in the signal receiving path of the RF front-end module. The above-mentioned method of powering the LNA with a constant voltage will also lead to high overall power consumption of the electronic device.

[0032] In view of this, an embodiment of the present application provides a radio frequency module and an electronic device, which can reduce the receiving power consumption of the radio frequency module and reduce the overall power consumption of the electronic device.

[0033] The technical solutions of the embodiments of the present application are introduced below through some exemplary implementations.

[0034] like Figure 3 As shown, it is a schematic diagram of a radio frequency module provided in an embodiment of the present application. The radio frequency module can be set in an electronic device. The electronic device can be, but is not limited to, various personal computers, laptops, smart phones, tablet computers, Internet of Things devices and portable wearable devices. The Internet of Things devices can be smart speakers, smart TVs, smart air conditioners, smart car devices, projection devices, etc. Portable wearable devices can be smart watches, smart bracelets, head-mounted devices, etc. Head-mounted devices can be virtual reality (VR) devices, augmented reality (AR) devices, smart glasses, etc.

[0035] Among them, the smart phone can be a conventional mobile phone with a straight screen design or a new form of foldable mobile phone. The foldable mobile phone has a main screen and a sub-screen. As the main screen and the sub-screen are folded and unfolded, the foldable mobile phone can also be in a folded state or an unfolded state.

[0036] In an embodiment of the present application, the RF module includes an RF front-end module, an RF transceiver chip and a controller, wherein the controller may be an MCU (Micro Controller Unit), an MPU (Micro Processor Unit), an FPGA (Field Programmable Gate Array), a CPU (Central Processing Unit), and the like.

[0037] The RF front-end module can be, for example, a conventional front-end module product, and the RF front-end module includes a low-noise amplifier module, which can be one or more LNAs. The RF transceiver chip is connected to the RF front-end module. During the RF signal reception process, the antenna outside the RF module receives the RF signal. After the RF signal enters the RF front-end module and reaches the low-noise amplifier module, the low-noise amplifier module needs to work to amplify the RF signal.

[0038] After the low-noise amplification module detects the RF signal, the low-noise amplification module determines the signal strength of the RF signal. Optionally, the low-noise amplification module sends the determined signal strength to the RF transceiver chip; optionally, the low-noise amplification module can also determine the signal strength interval to which the signal strength belongs, and send the signal strength interval to the RF transceiver chip.

[0039] Among them, each signal strength interval can be set by itself during implementation. For example, -50dBm or less can be set as a signal strength interval, -50dBm to -65dBm can be set as a signal strength interval, -65dBm to -80dBm can be set as a signal strength interval, -80dBm to -95dBm can be set as a signal strength interval, -95dBm to -105dBm can be set as a signal strength interval, above -105dBm can be set as a signal strength interval, and so on.

[0040] The RF transceiver chip is used to determine the first gain level of the low-noise amplifier module according to the signal strength of the RF signal received by the low-noise amplifier module during the RF signal reception process. The first gain level can be understood as the amplification factor that the low-noise amplifier module needs to amplify the RF signal.

[0041] As described above, the signal strength received by the RF transceiver chip may be a specific signal strength value or a signal strength range, and the RF transceiver chip may identify the LNA gain level that needs to be controlled under the signal strength, that is, the first gain level, according to the signal strength.

[0042] In a possible implementation, taking the signal strength as the signal strength interval as an example, the RF transceiver chip can search for the LNA gain level corresponding to the signal strength, that is, the first gain level, in a pre-configured mapping relationship between the signal strength and the LNA gain level according to the signal strength.

[0043] Exemplarily, the mapping relationship between signal strength and LNA gain level may be as shown in Table 1:

[0044] Table 1

[0045]

[0046] It should be noted that Table 1 is only an exemplary mapping relationship between signal strength and LNA gain level. In actual implementation, the mapping relationship between signal strength and LNA gain level can be flexibly adjusted as needed.

[0047] In another possible implementation, the RF transceiver chip may also send the signal strength of the RF signal to other modules, such as an AP (Application Processor) module, and determine the first gain level of the low-noise amplifier module with the help of other modules, and so on. There is no restriction on the manner in which the RF transceiver chip determines the first gain level of the low-noise amplifier module based on the signal strength of the RF signal received by the low-noise amplifier module.

[0048] In the embodiment of the present application, the controller is connected to the radio frequency transceiver chip. The controller is also called a single chip microcomputer or a single chip microcomputer. The frequency and specifications of the CPU (Central Process Unit) are appropriately reduced, and the peripheral interfaces such as memory, counter, USB (Universal Serial Bus), A / D (Analog to Digital) conversion, UART (Universal Asynchronous Receiver / Transmitter), PLC (Programmable logic Controller), DMA (Direct Memory Access) are simply integrated. The processing chip can be applied to certain specific scenarios. The controller mainly includes a storage unit, a calculation unit, an input control interface and an output control interface. The storage unit is mainly used to store controller instructions and other related firmware programs. The calculation unit is mainly used to process the input instructions and convert them into output instructions for autonomous control. The input control interface is mainly connected to the previous AP or used for instruction input, etc. The output control interface is mainly used to output the instructions processed by the calculation unit to the next unit.

[0049] After the RF transceiver chip determines the first gain level of the low noise amplifier module in the above manner, it sends the first gain level to the controller, and the controller is used to control the first supply voltage of the low noise amplifier module according to the first gain level.

[0050] The first gain level is positively correlated with the magnitude of the first supply voltage, that is, the lower the first gain level, the smaller the first supply voltage, and the higher the first gain level, the larger the first supply voltage.

[0051] In a possible implementation, the controller may search for a power supply voltage corresponding to the first gain level, i.e., the first power supply voltage, in a preset mapping relationship between LNA gain levels and power supply voltages according to the first gain level. The mapping relationship includes a corresponding relationship between each LNA gain level and each power supply voltage. The magnitude of the gain level is positively correlated with the magnitude of the power supply voltage, i.e., a high gain level corresponds to a high power supply voltage, and a low gain level corresponds to a low power supply voltage.

[0052] Exemplarily, the mapping relationship between the LNA gain level and the supply voltage may be as shown in Table 2:

[0053] Table 2

[0054]

[0055] It should be noted that Table 2 is only an exemplary mapping relationship between the LNA gain level and the power supply voltage. In actual implementation, the mapping relationship between the LNA gain level and the power supply voltage can be flexibly adjusted as needed.

[0056] In another possible implementation, the controller may also send the first gain level of the low-noise amplifier module to other modules, and determine the first supply voltage corresponding to the first gain level through the other modules, or the controller may also predict the first supply voltage based on the first gain level through a pre-trained prediction model, and so on. There is no limitation on the manner in which the controller determines the first supply voltage of the low-noise amplifier module based on the first gain level.

[0057] It can be understood that the first supply voltage is an operating voltage that can satisfy the low-noise amplifier module to amplify the RF signal according to the first gain level, and the controller controls the power supply module to power the low-noise amplifier module according to the first supply voltage, so that the low-noise amplifier module can amplify the RF signal according to the first gain level, and the amplified RF signal returns to the RF transceiver chip for further processing.

[0058] In an embodiment of the present application, optionally, the power supply module may be an existing external power supply, and the controller outputs corresponding control instructions according to the first power supply voltage to control the external power supply to output the first power supply voltage to power the low-noise amplifier module.

[0059] In other possible implementations, see Figure 4 The RF module also includes a first power supply module, which is connected to the controller and the RF front-end module respectively. The controller is specifically used to determine a first control instruction corresponding to the first supply voltage according to the first gain level, and then send the first control instruction to the first power supply module. The first control instruction is used to instruct the first power supply module to power the low-noise amplifier module according to the first supply voltage.

[0060] In this way, the controller can flexibly control the magnitude of the first power supply voltage of the low-noise amplifier module according to the first gain level, thereby achieving the effect of high gain and high voltage and low gain and low voltage.

[0061] Overall, in the above embodiments, the controller can flexibly control the first supply voltage of the low-noise amplifier module according to the first gain level of the low-noise amplifier module. For example, if the first gain level of the low-noise amplifier module is high, the controller can increase the first supply voltage accordingly. If the first gain level of the low-noise amplifier module is low, the controller can reduce the first supply voltage accordingly. That is, the controller can dynamically adjust the first supply voltage of the low-noise amplifier module to achieve the effect of low gain and low voltage and high gain and high voltage, avoiding the use of a constant voltage to power the low-noise amplifier module, which may cause the problem of high receiving power consumption of the RF module due to the use of a larger constant voltage for power supply at a lower gain level. The controller in the embodiment of the present application can adjust the first supply voltage of the low-noise amplifier module at different first gain levels according to different first gain levels, thereby reducing the receiving power consumption of the RF module, and thus reducing the overall power consumption of the electronic device.

[0062] In one embodiment, based on Figure 4 The embodiment shown, see Figure 5 , Figure 5 A system schematic diagram of a radio frequency module provided in an embodiment of the present application.

[0063] For example, Figure 5 The RF front-end module includes a low noise amplifier module, such as LNA ( Figure 5 (not shown), the LNA_OUT (output) end of the RF front-end module is connected to the RF transceiver chip, and the RF front-end module sends the signal strength of the RF signal received by the low-noise amplifier module to the RF transceiver chip through the LNA_OUT end. Then, the RF transceiver chip determines the first gain level of the low-noise amplifier module according to the signal strength of the RF signal.

[0064] The RF transceiver chip sends the first gain level to the controller, and the controller is connected to the control end of the first power module. For example, see Figure 6 , Figure 6 The present invention is a schematic diagram of the internal structure of a first power supply module. The controller can be connected to the SLC (Serial Clock Line) end of the first power supply module. After the controller determines the first power supply voltage of the low-noise amplifier module according to the first gain level, the controller sends a first control instruction corresponding to the first power supply voltage to the SLC end of the first power supply module. The voltage output end (VOUT) of the first power supply module is connected to the VDD-LNA of the RF front-end module. In this way, the first power supply module outputs the first power supply voltage to power the low-noise amplifier module LNA in the RF front-end module.

[0065] In the present application, please continue to refer to Figure 5, the controller is also connected to the RF front-end module. For example, the controller can be connected to the MIPI (Mobile Industry Processor Interface) end of the RF front-end module. The controller is also used to generate a low-noise amplifier module control instruction according to the first gain level, and send the low-noise amplifier module control instruction to the MIPI end of the RF front-end module. The low-noise amplifier module control instruction is at least used to instruct the low-noise amplifier module to amplify the RF signal received by the low-noise amplifier module according to the first gain level, that is, after the first power supply module outputs the first power supply voltage to power the low-noise amplifier module in the RF front-end module, the low-noise amplifier module works according to the low-noise amplifier module control instruction sent by the controller.

[0066] In a possible implementation, the above-mentioned first control instruction and the low-noise amplifier module control instruction can be carried in a MIPI instruction. The controller sends the MIPI instruction to the first power module and the RF front-end module respectively. The first power module parses the first control instruction from the MIPI instruction, and outputs the first supply voltage to power the low-noise amplifier module according to the instruction of the first control instruction. The low-noise amplifier module parses the low-noise amplifier module control instruction from the MIPI instruction, and the low-noise amplifier module works according to the low-noise amplifier module control instruction sent by the controller.

[0067] In another possible implementation, the first control instruction and the low noise amplifier module control instruction may also be two independent instructions, so that the controller sends the first control instruction to the first power module, and sends the low noise amplifier module control instruction to the RF front-end module.

[0068] Optionally, similar to the related art, the low noise amplifier module control instruction can also be generated by the RF transceiver chip and sent to the RF front-end module.

[0069] In the embodiment of the present application, in addition to flexibly controlling the first power supply voltage of the low-noise amplifier module, the controller can also send low-noise amplifier module control instructions to the RF front-end module. The RF front-end module still operates according to the low-noise amplifier module control instructions, does not change the inherent working logic of the RF front-end module, and is easy to implement.

[0070] In the embodiment of the present application, different gain levels are realized for the main components (low-noise amplifier module) on the RF receiving path in the RF module, corresponding to different supply voltages, so as to achieve power consumption benefits. That is, the embodiment of the present application adopts APT (Average Power Tracking) technology for the low-noise amplifier module, see Figure 7 , Figure 7The figure is a comparison diagram of the voltage curve of using a constant voltage to power the LNA and the voltage curve of using a dynamic first power supply voltage to power the low noise amplifier module (such as LNA) in the embodiment of the present application. It can be seen that compared with the traditional technology, the first power supply voltage in the embodiment of the present application is significantly reduced, thereby reducing the receiving power consumption.

[0071] See also Figure 8 , Figure 8 This is a loss comparison diagram of using a constant voltage to power the LNA and using a dynamic first power supply voltage to power the low noise amplifier module in an embodiment of the present application. Figure 8 The horizontal axis is time, and the vertical axis is voltage. Figure 8 The area difference (i.e., the area difference obtained by subtracting the area difference obtained by multiplying the constant voltage and time in the conventional technology from the area difference obtained by multiplying the dynamic first power supply voltage and time in the embodiment of the present application) Figure 8 The oblique line portion shown in FIG. 1 is the power consumption benefit brought by the embodiment of the present application. In the embodiment of the present application, the different power supply voltages of the low noise amplifier module can be adjusted according to different gain levels. Compared with the conventional technology of LNA using a constant voltage for power supply, the refined power supply voltage control of LNA in the embodiment of the present application is more conducive to saving power consumption.

[0072] The above embodiments are all introduced by taking a radio frequency front-end module as an example. Since the communication process of electronic equipment may involve multiple frequency bands working simultaneously, such as the downlink CA (Carrier Aggregation) scenario. Figure 5 The illustrated embodiment introduces a voltage control scheme for a low noise amplifier module when there are multiple RF front-end modules.

[0073] Among them, the frequency bands supported by the low-noise amplifier modules in multiple RF front-end modules may be different, or partially the same or completely the same, and no specific limitation is made here.

[0074] In a possible implementation, there are multiple RF front-end modules and one first power supply module.

[0075] See also Fig. 9 , the number of RF front-end modules is two (including Fig. 9 The first RF front-end module and the second RF front-end module shown in the figure), the RF transceiver chip is connected to each RF front-end module respectively, and the first power supply module is connected to each RF front-end module respectively.

[0076] The RF transceiver chip is specifically used to determine the first gain level of the low-noise amplification module included in each RF front-end module according to the signal strength of the RF signal received by the low-noise amplification module included in each RF front-end module. For each RF front-end module, the RF transceiver chip determines the first gain level of the low-noise amplification module included in the RF front-end module according to the signal strength of the RF signal received by the low-noise amplification module included in the RF front-end module. Please refer to the relevant description of the above embodiment and will not be repeated here.

[0077] The controller is specifically used to determine the first supply voltage according to the maximum gain level among each first gain level, that is, the controller selects the maximum gain level, or the highest gain level, from the first gain levels of the low-noise amplifier modules included in each RF front-end module, and then uses the maximum gain level to determine the first supply voltage. The manner in which the controller determines the first supply voltage according to the maximum gain level can be found in the above description of the controller determining the first supply voltage according to the first gain level, which will not be repeated here.

[0078] Then, the controller controls the first power supply module to supply power to the low noise amplifier modules included in each RF front-end module according to the first power supply voltage.

[0079] In addition, similar to the implementation method of the above-mentioned RF front-end module, the controller is also connected to each RF front-end module. For each RF front-end module, the controller also generates a low-noise amplification module control instruction according to the first gain level of the low-noise amplification module included in the RF front-end module, and sends the low-noise amplification module control instruction to the RF front-end module. The low-noise amplification module control instruction is at least used to instruct the low-noise amplification module to amplify the RF signal received by the low-noise amplification module according to the first gain level.

[0080] In this way, in the case of multiple RF front-end modules, the controller can control the first power supply module to power each low-noise amplifier module according to the supply voltage required for the maximum gain level of the low-noise amplifier module in each RF front-end module, thereby meeting the gain requirements of each low-noise amplifier module and ensuring the gain requirements of each low-noise amplifier module.

[0081] In another possible implementation, there are multiple RF front-end modules and multiple first power modules, and the RF front-end modules correspond to the first power modules one by one.

[0082] See also Fig.10 , the number of RF front-end modules is two (including Fig.10 The first RF front-end module and the second RF front-end module shown in the figure have two first power modules (including Fig.10The first power module 1 and the first power module 2 are shown).

[0083] Among them, the RF transceiver chip is connected to each RF front-end module respectively, the controller is connected to each first power module respectively, and each first power module is connected to the RF front-end module corresponding to the first power module.

[0084] In this way, for each group of RF front-end modules and the first power supply module, the RF transceiver chip can determine the first gain level of the low-noise amplifier module included in the RF front-end module according to the signal strength of the RF signal received by the low-noise amplifier module included in the RF front-end module, and the controller determines the first supply voltage according to the first gain level. The specific implementation method can be found in the relevant description of the above embodiment, and will not be repeated here.

[0085] Then, the controller controls the first power supply module connected to the RF front-end module to supply power to the low-noise amplifier module included in the RF front-end module according to the first power supply voltage.

[0086] In addition, similar to the implementation method of the above-mentioned RF front-end module, the controller is also connected to each RF front-end module. For each RF front-end module, the controller also generates a low-noise amplification module control instruction according to the first gain level of the low-noise amplification module included in the RF front-end module, and sends the low-noise amplification module control instruction to the RF front-end module. The low-noise amplification module control instruction is at least used to instruct the low-noise amplification module to amplify the RF signal received by the low-noise amplification module according to the first gain level.

[0087] In this way, in the case of multiple RF front-end modules and multiple first power supply modules, the controller can control each first power supply module separately, and power the low-noise amplifier module according to the power supply voltage required for the first gain level of the low-noise amplifier module in its corresponding RF front-end module, thereby meeting the power supply voltage requirements of different low-noise amplifier modules in different frequency bands and achieving optimal power consumption savings.

[0088] In one embodiment, based on Figure 4 The embodiment shown, see Fig.11 In this embodiment, the radio frequency module also includes an AP chip, and the AP chip is connected to the controller and the radio frequency transceiver chip respectively.

[0089] The AP chip is used to control the controller and the radio frequency transceiver chip to synchronously perform a preset operation, where the preset operation includes at least one of an on operation, a off operation, a reset operation and a reset operation.

[0090] Exemplarily, the AP chip can control the controller to synchronously perform an opening operation, a closing operation, a resetting operation, and a resetting operation with the RF transceiver chip. In this way, the basic operations of the controller and the RF transceiver chip are synchronized, and the controller can flexibly control the first supply voltage of the low-noise amplifier module according to the first gain level sent by the RF transceiver chip.

[0091] In one embodiment, based on any of the above embodiments, the RF front-end module also includes a power amplifier module, and the power amplifier module may be one or more PAs.

[0092] The RF transceiver chip is also used to determine the second gain level of the power amplifier module according to the signal strength of the RF signal to be transmitted during the RF signal transmission process. The manner in which the RF transceiver chip determines the second gain level of the power amplifier module according to the signal strength of the RF signal to be transmitted is similar to the manner in which the RF transceiver chip determines the first gain level of the low-noise amplifier module according to the signal strength of the RF signal received by the low-noise amplifier module in the above-mentioned embodiment, and will not be repeated here.

[0093] Then, the controller is further used to control the second supply voltage of the power amplification module according to the second gain level.

[0094] Optionally, the controller outputs a corresponding control instruction according to the second supply voltage to control the external power supply to output the second supply voltage to power the power amplifier module.

[0095] Optionally, the RF module further includes a second power module, which is connected to the controller and the RF front-end module respectively. The controller is specifically used to determine a second control instruction corresponding to the second power supply voltage according to the second gain level, and send the second control instruction to the second power module, and the second control instruction is used to instruct the second power module to power the power amplifier module according to the second power supply voltage.

[0096] In this way, during the process of transmitting the RF signal, similar to the process of receiving the RF signal, the controller can also flexibly control the size of the second supply voltage of the power amplifier module according to the second gain level of the RF signal to be transmitted. For example, if the second gain level of the power amplifier module is higher, the controller can increase the second supply voltage accordingly. If the second gain level of the power amplifier module is lower, the controller can reduce the second supply voltage accordingly. That is, the controller can dynamically adjust the second supply voltage of the power amplifier module to achieve the effect of low gain and low voltage and high gain and high voltage, thereby reducing the transmission power consumption of the RF module and further reducing the overall power consumption of the electronic device.

[0097] In addition, it should be noted that Figure 3-Figure 5 , Figure 9-11The structure shown is merely a block diagram of a partial structure related to the scheme of the present application, and does not constitute a limitation on the RF module of the electronic device used in the present application. The specific RF module may include more or fewer components than shown in the figure, or combine certain components, or have a different component arrangement.

[0098] Based on the same inventive concept, an embodiment of the present application further provides an electronic device, which includes the radio frequency module described in any of the above embodiments. The implementation solution provided by the electronic device to solve the problem is similar to the implementation solution recorded in the above embodiments of the radio frequency module, and the above definition of the radio frequency module can be referred to, which will not be repeated here.

[0099] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0100] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A radio frequency module, characterized in that: The radio frequency module comprises: A radio frequency front-end module, wherein the radio frequency front-end module includes a low noise amplifier module; A radio frequency transceiver chip, the radio frequency transceiver chip is connected to the radio frequency front-end module, and the radio frequency transceiver chip is used to determine the first gain level of the low noise amplifier module according to the signal strength of the radio frequency signal received by the low noise amplifier module during the process of receiving the radio frequency signal; A controller is connected to the radio frequency transceiver chip, and is used to control a first supply voltage of the low noise amplifier module according to the first gain level.

2. The radio frequency module according to claim 1, characterized in that: The radio frequency module also includes: A first power module, wherein the first power module is connected to the controller and the RF front-end module respectively; The controller is specifically used to determine a first control instruction corresponding to the first supply voltage according to the first gain level, and send the first control instruction to the first power supply module, wherein the first control instruction is used to instruct the first power supply module to power the low-noise amplifier module according to the first supply voltage.

3. The radio frequency module according to claim 2, characterized in that: The controller is specifically configured to search for and obtain the first supply voltage corresponding to the first gain level in a preset mapping relationship according to the first gain level; The mapping relationship includes a corresponding relationship between each gain level and each supply voltage, and the magnitude of the gain level is positively correlated with the magnitude of the supply voltage.

4. The radio frequency module according to claim 2, characterized in that: There are multiple RF front-end modules, the RF transceiver chip is connected to each of the RF front-end modules respectively, and the first power module is connected to each of the RF front-end modules respectively; The RF transceiver chip is specifically used to determine the first gain level of the low noise amplifier module included in each RF front-end module according to the signal strength of the RF signal received by the low noise amplifier module included in each RF front-end module; The controller is specifically used to determine the first supply voltage according to the maximum gain level among the first gain levels, and control the first power supply module to power the low-noise amplifier module included in each of the RF front-end modules according to the first supply voltage.

5. The radio frequency module according to claim 2, characterized in that: There are multiple RF front-end modules and multiple first power modules, the RF transceiver chip is connected to each RF front-end module respectively, the controller is connected to each first power module respectively, and each first power module is connected to the RF front-end module corresponding to the first power module.

6. The radio frequency module according to claim 1, characterized in that: The controller is also connected to the RF front-end module; The controller is also used to generate a low-noise amplification module control instruction according to the first gain level, and send the low-noise amplification module control instruction to the RF front-end module, and the low-noise amplification module control instruction is at least used to instruct the low-noise amplification module to amplify the RF signal received by the low-noise amplification module according to the first gain level.

7. The radio frequency module according to claim 1, characterized in that: The RF front-end module also includes a power amplifier module, and the RF transceiver chip is also used to determine the second gain level of the power amplifier module according to the signal strength of the RF signal to be transmitted during the RF signal transmission process; The controller is further configured to control a second supply voltage of the power amplifier module according to the second gain level.

8. The radio frequency module according to claim 7, characterized in that: The radio frequency module also includes: A second power module, the second power module is connected to the controller and the RF front-end module respectively; The controller is specifically used to determine a second control instruction corresponding to the second supply voltage according to the second gain level, and send the second control instruction to the second power supply module, wherein the second control instruction is used to instruct the second power supply module to power the power amplifier module according to the second supply voltage.

9. The radio frequency module according to claim 1, characterized in that: The radio frequency module also includes: An AP chip, wherein the AP chip is connected to the controller and the RF transceiver chip respectively, and the AP chip is used to control the controller and the RF transceiver chip to synchronously perform a preset operation, wherein the preset operation includes at least one of an on operation, a off operation, a reset operation and a reset operation.

10. An electronic device, characterized in that: Comprising a radio frequency module as described in any one of claims 1-9.

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