Electrothermal film heater processing method and system, intelligent terminal and storage medium

Abstract

The invention relates to an electric heating film heater machining method and system, an intelligent terminal and a storage medium, and relates to the field of electric heating film machining.The method comprises the steps that a steel plate is machined, and the steel plate is used for bearing an electric heating film; preparing an electrothermal film on the first surface of the steel plate, wherein the electrothermal film sequentially comprises a dielectric layer, a first conductor layer, a second conductor layer, a resistive layer and a covering layer on the first surface of the steel plate; the step of preparing the electrothermal film on the first surface of the steel plate comprises the following steps: preparing a dielectric layer on the first surface of the steel plate; preparing a first conductor layer on the dielectric layer, wherein the first conductor layer is used for improving the connection strength between the conductor layer and the dielectric layer; preparing a second conductor layer on the first conductor layer; preparing a resistance layer on the second conductor layer; preparing a covering layer on the resistance layer; detecting performance parameters of the electrothermal film; and under the condition that the performance parameters are qualified, a heating cavity is assembled on the second face of the steel plate, and the electrothermal film heater is obtained. The electric heating film has the effect of improving the connection reliability between the film layers of the electric heating film.

Description

Technical Field

[0001] The present application relates to the field of electric heating film processing, and in particular to a processing method, system, intelligent terminal and storage medium for an electric heating film heater. Background Art

[0002] The electric film heater is a device that uses an electric heating film as a heating element. The electric heating film is usually composed of a thin resistive material that can evenly convert electrical energy into heat energy.

[0003] Related technology When manufacturing an electric heating film heater, it is necessary to sequentially prepare a dielectric layer, a conductor layer, a resistor layer and an insulating layer on a base plate to obtain an electric heating film. When the electric heating film is working, electrodes are placed on the conductor layer and electricity is applied, so that the resistor layer generates heat due to the electrothermal effect.

[0004] With respect to the above-mentioned related technologies, the inventors believe that different film layers of the electric heating film are prone to fall off, which affects the normal operation of the electric heating film. Summary of the invention

[0005] In order to improve the connection reliability between the film layers of an electric heating film, the present application provides an electric heating film heater processing method, system, intelligent terminal and storage medium.

[0006] In a first aspect, the present application provides a method for processing an electric heating film heater, which adopts the following technical solution: A method for processing an electric heating film heater, comprising: Processing steel plates, which are used to support electric heating films; An electric heating film is prepared on the first surface of the steel plate, and the electric heating film includes a dielectric layer, a first conductor layer, a second conductor layer, a resistance layer and a covering layer in sequence on the first surface of the steel plate; the steps of preparing the electric heating film on the first surface of the steel plate include: preparing a dielectric layer on the first surface of the steel plate; preparing a first conductor layer on the dielectric layer, and the first conductor layer is used to improve the connection strength between the conductor layer and the dielectric layer; preparing a second conductor layer on the first conductor layer; preparing a resistance layer on the second conductor layer; and preparing a covering layer on the resistance layer; Detect the performance parameters of the electric heating film; When the performance parameters are qualified, a heating cavity is assembled on the second surface of the steel plate to obtain an electric heating film heater.

[0007] By adopting the above technical solution, a first conductive layer is added between the second conductive layer and the dielectric layer, the connection strength between the conductive layer and the dielectric layer is improved, the conductive layer can be prevented from falling off the dielectric layer, and the reliability of the electric heating film is improved.

[0008] Optionally, a resistor silk-screen printing operation is performed on the second conductor layer to obtain a resistor silk-screen layer; The resistor silk-screen layer is subjected to a resistor sintering operation to obtain a resistor layer, and the thickness of the resistor layer is 12±5 μm.

[0009] By adopting the above technical solution, the resistance layer is obtained through screen printing operation and resistance sintering operation, so that the film thickness of the resistance layer can be guaranteed to be at a smaller value, thereby reducing the thickness of the heating film.

[0010] Optionally, detect the flatness of the resistor silk screen layer; Determine the raised area and the recessed area on the resistor silk-screen layer according to the flatness; Determine a target convex area and a target concave area according to the distance between the convex area and the concave area, wherein the distance between the target convex area and the target concave area is less than a distance threshold; Obtain the connection line and the connection direction from the target convex area to the target concave area; The scraper is controlled to move with the target raised area as the starting point and the target sunken area as the end point. The moving direction of the scraper is the same as the direction of the connecting line, and the scraper and the connecting line are at a preset angle.

[0011] By adopting the above technical solution, the redundant resistor layer components in the target raised area can be transferred to the target recessed area without performing a correction operation on the entire resistor silk-screen layer, so a more refined correction operation can be performed on the resistor silk-screen layer.

[0012] Optionally, when there are at least two target concave areas, obtaining distribution of the target concave areas relative to the target convex areas; When the distribution is point cloud distribution, the center point of the scraper is controlled to coincide with the target raised area; the scraper is controlled to reciprocate with the center point of the scraper as the origin; When the distribution is a half-space distribution, determine the first target concave area in the target concave area that is farthest from the target convex area; obtain a critical dividing line based on the spatial dividing line of the half-space distribution and the first target concave area, and the spatial dividing line is parallel to the critical dividing line; control the scraper to move back and forth between the spatial dividing line and the critical dividing line.

[0013] By adopting the above technical solution, different methods can be selected to correct the resistor silk-screen layer according to the different distributions of the recessed areas, thereby ensuring the flatness of the resistor silk-screen layer.

[0014] Optionally, when the distribution is a half-space distribution, a clustering operation is performed on the target concave area to obtain a clustering result; Determine whether there are discrete clustering results in the clustering results; If not, the step of controlling the scraper to move between the space dividing line and the critical dividing line is executed; If yes, then the line from the target raised area to the clustering result is set as the first path; The connection line from the agglomerated clustering result to the discrete clustering result is set as the second path; The scraper is controlled to move along the first path and the second path in sequence.

[0015] By adopting the above technical solution, when there are discrete target recessed areas in the target recessed area, the scraper is moved along the first path and the second path, so that the excess resistance layer constituents in the target raised area can be better transferred to the target recessed area.

[0016] Optionally, the temperature of each temperature zone in the sintering furnace is set according to a preset sintering standard; Control the steel plate to move in the sintering furnace so that the resistor silk-screen layer moves along with the steel plate in the sintering furnace; When the steel plate moves in the sintering furnace, the film surface information of the resistor silk screen layer is obtained, and the film surface information includes color, integrity and smoothness; Adjust the moving speed of the steel plate according to the membrane surface information; After the steel sheet leaves the sintering furnace, a resistive layer is obtained.

[0017] By adopting the above technical solution, when the resistor silk-screen layer is sintered, the moving speed of the steel plate can be adjusted in real time according to the film surface information, so that the resistor silk-screen layer can form a resistor layer that meets the requirements.

[0018] Optionally, when the membrane surface information meets the preset abnormal index, the temperature zone of the steel plate is obtained; Determine whether the temperature in the current temperature zone is the same as the temperature in the previous temperature zone; If yes, the moving speed of the steel plate is adjusted according to the membrane surface information; If not, compare the temperature of the current temperature zone with the temperature of the previous temperature zone; If the temperature of the current temperature zone is greater than the temperature of the previous temperature zone, then lower the temperature of the current temperature zone; If the temperature of the current temperature zone is lower than the temperature of the previous temperature zone, the temperature of the current temperature zone is increased.

[0019] By adopting the above technical solution, according to the temperature relationship between the current temperature zone and the previous temperature zone, a suitable method is selected to improve the sintering process, so that the above-mentioned improved process is closer to the actual situation, thereby obtaining a better sintering effect.

[0020] In a second aspect, the present application provides an electric film heater processing system, which adopts the following technical solution: An electric film heater processing system, comprising: An acquisition module is used to obtain performance parameters, flatness and distribution of the resistor layer, preset sintering standards, film surface information and preset abnormal indicators; A memory for storing a program of any one of the above-mentioned methods for processing an electric film heater; The program in the processor and the memory can be loaded and executed by the processor to implement any of the above-mentioned methods for processing the electric heating film heater.

[0021] By adopting the above technical solution, a first conductive layer is added between the second conductive layer and the dielectric layer, the connection strength between the conductive layer and the dielectric layer is improved, the conductive layer can be prevented from falling off the dielectric layer, and the reliability of the electric heating film is improved.

[0022] In a third aspect, the present application provides a smart terminal, which adopts the following technical solution: An intelligent terminal comprises a memory and a processor, wherein the memory stores a computer program which can be loaded by the processor and execute any one of the above-mentioned electrothermal film heater processing methods.

[0023] By adopting the above technical solution, a first conductive layer is added between the second conductive layer and the dielectric layer, the connection strength between the conductive layer and the dielectric layer is improved, the conductive layer can be prevented from falling off the dielectric layer, and the reliability of the electric heating film is improved.

[0024] In a fourth aspect, the present application provides a computer storage medium capable of storing corresponding programs, which has the characteristics of being convenient for improving the connection reliability between the layers of the electric heating film, and adopts the following technical solutions: A computer-readable storage medium stores a computer program that can be loaded by a processor and execute any one of the above-mentioned methods for processing an electric film heater.

[0025] By adopting the above technical solution, a first conductive layer is added between the second conductive layer and the dielectric layer, the connection strength between the conductive layer and the dielectric layer is improved, the conductive layer can be prevented from falling off the dielectric layer, and the reliability of the electric heating film is improved.

[0026] In summary, the present application includes at least one of the following beneficial technical effects: 1. Adding a first conductive layer between the second conductive layer and the dielectric layer can improve the connection strength between the conductive layer and the dielectric layer, prevent the conductive layer from falling off the dielectric layer, and improve the reliability of the electric heating film; 2. The redundant resistor layer components in the target raised area can be transferred to the target recessed area without the need to perform a correction operation on the entire resistor silk screen layer, so a more refined correction operation can be performed on the resistor silk screen layer; 3. When the resistor silk-screen layer is sintered, the moving speed of the steel plate can be adjusted in real time according to the film surface information, so that the resistor silk-screen layer can form a resistor layer that meets the requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a schematic flow chart of a method for processing an electric film heater provided in an embodiment of the present application.

[0028] Figure 2 It is a schematic diagram of the structure of an electric heating film provided in an embodiment of the present application.

[0029] Figure 3 It is a schematic diagram of the structure of an electric heating film provided in an embodiment of the present application.

[0030] Figure 4 It is a schematic flow chart of a method for processing a resistor silk-screen layer provided in an embodiment of the present application.

[0031] Figure 5 It is a schematic diagram of a scraper movement provided in an embodiment of the present application.

[0032] Figure 6 It is a schematic flow chart of a method for processing a resistor silk-screen layer provided in an embodiment of the present application.

[0033] Figure 7 It is a schematic flow chart of a method for processing a resistor silk-screen layer provided in an embodiment of the present application.

[0034] Figure 8 It is a schematic flow chart of a method for sintering a resistor layer provided in an embodiment of the present application.

[0035] Fig. 9 It is a schematic flow chart of a method for sintering a resistor layer provided in an embodiment of the present application.

[0036] Fig.10 It is a schematic flow chart of a method for processing an electric film heater provided in an embodiment of the present application. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical solutions and advantages of this application more clear, the following Figure 1-10 It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0038] The present application embodiment discloses a method for processing an electric heating film heater. Figure 1 , the electrothermal film heater processing method comprises: Step S11: processing a steel plate, the steel plate is used to support the electric heating film.

[0039] Optionally, the step of processing the steel plate includes cutting the steel plate. Exemplarily, a steel plate is obtained by cutting the steel using a laser cutting machine. Specifically, a single-sided laser film is covered on the steel; the steel is placed on a laser cutting machine with the single-sided laser film facing upward; the steel is cut using a laser cutting machine to obtain a steel plate. The parameters of the laser cutting machine are set as follows: air pressure: 1.3-1.5MPa; nozzle diameter: 1.5mm; speed: 16m / min. The specification parameters of the single-sided laser film are 1.2x1219x2438mm.

[0040] Exemplarily, the length of the steel is 110±0.1 mm, the width is 60±0.1 mm, and the no-go gauge of the steel on the laser cutting machine is 8-¢2.2±0.05 mm.

[0041] Optionally, the step of processing the steel plate further includes polishing the steel plate. Exemplarily, the steel plate is placed on a tooling, and the tooling with the steel plate placed thereon is placed into a polishing line via a conveyor belt; the polishing line polishes the steel plate via a fiber wheel.

[0042] Optionally, the step of processing the steel plate further includes cleaning the steel plate. Exemplarily, the steel plate is cleaned using a cleaning machine, the cleaning machine comprising a cleaning tank and a rinsing tank. Exemplarily, the water temperature of the cleaning tank is set to 60±5°C, the water temperature of the rinsing tank is set to 150±10°C, and the inlet water conductivity is ≤5μS / cm. The cleaning time of the cleaning tank and the rinsing tank is 5 minutes, and the ratio of degreaser to water used in the cleaning tank and the rinsing tank is 10:90.

[0043] Step S12: preparing an electric heating film on the first surface of the steel plate, wherein the electric heating film on the first surface of the steel plate sequentially comprises a dielectric layer, a first conductor layer, a second conductor layer, a resistor layer and a covering layer.

[0044] The first side of the steel plate is any side of the steel plate.

[0045] For example, please refer to Figure 2 The electric heating film includes a dielectric layer 22 , a first conductor layer 23 , a second conductor layer 24 , a resistor layer 25 and a covering layer 25 in sequence on the first surface of the steel plate 21 .

[0046] Optional. The present application embodiment discloses a method for processing an electric heating film. Figure 3 , the electrothermal film processing method comprises: Step S121: preparing a dielectric layer on the first surface of the steel plate.

[0047] The dielectric layer is used to block the electrical connection between the steel plate and the conductive layer. Optionally, the dielectric layer is made of insulating material. For example, the dielectric layer is made of ceramic material or polymer material.

[0048] Optionally, this step includes: performing a dielectric silk-screen printing operation on the first surface of the steel plate to obtain a dielectric silk-screen layer; and performing a dielectric sintering operation on the dielectric silk-screen layer to obtain a dielectric layer.

[0049] Optionally, in order to ensure the quality of the medium screen printing layer obtained by the medium screen printing operation, there are certain requirements for the processing environment. For example, the processing humidity requires 40%-60%, the processing temperature requires 22-26°C, and the positive pressure between the screen printing rooms requires 3±2Pa.

[0050] Optionally, the medium screen printing operation is implemented by a screen printer. Exemplarily, the parameters of the screen printer are set as follows: the release height is 3-5 mm, the air pressure is 0.4-0.65 MPa, the screen printing speed is 150, and the scraper pressure is 4±0.5 mm.

[0051] Optionally, the stencil used for the medium screen printing operation is the FS1435C medium layer stencil.

[0052] Optionally, the film thickness of the dielectric layer is 35±5 μm.

[0053] Optionally, the dielectric sintering operation is achieved through a sintering furnace, in which a plurality of temperature zones are provided, and each temperature zone is provided with a corresponding temperature. During the dielectric sintering operation, the dielectric silk-screen layer will follow the steel plate to move in the sintering furnace, so that the dielectric silk-screen layer passes through a plurality of temperature zones in the sintering furnace, thereby completing the dielectric sintering operation and obtaining the dielectric layer. For example, the temperature zones of the sintering furnace are 200°C-200°C-200°C-450°C-550°C-650°C-780°C-850°C-850°C-850°C-850°C-765°C (the error value of each temperature zone is ±3°C). The mesh speed in the sintering furnace is 180mm / min.

[0054] Step S122: preparing a first conductor layer on the dielectric layer, where the first conductor layer is used to improve the connection strength between the conductor layer and the dielectric layer.

[0055] Optionally, the first conductor layer is made of a conductive material, for example, a silver-palladium resistor paste.

[0056] Optionally, this step includes: performing a first conductor screen printing operation on the dielectric layer to obtain a first conductor screen printing layer; and performing a first conductor sintering operation on the first conductor screen printing layer to obtain a first conductor layer.

[0057] Optionally, in order to ensure the quality of the first conductor silk screen layer obtained by the first conductor silk screen printing operation, certain requirements are imposed on the processing environment, for example, the processing humidity is required to be 40%-60%, the processing temperature is required to be 22-26°C, and the positive pressure in the silk screen printing room is required to be 3±2Pa.

[0058] Optionally, the first conductor screen printing operation is implemented by a screen printer. Exemplarily, the parameters of the screen printer are set as follows: the release height is 3-5 mm, the air pressure is 0.4-0.65 MPa, the screen printing speed is 150, and the scraper pressure is 4±0.5 mm.

[0059] Optionally, the stencil used in the first conductor screen printing operation is a FS1435C conductor stencil.

[0060] Optionally, the thickness of the first conductor layer is 12±5 μm.

[0061] Optionally, the first conductor sintering operation is implemented by a sintering furnace, and a plurality of temperature zones are provided in the sintering furnace, and each temperature zone is provided with a corresponding temperature. When the first conductor sintering operation is performed, the first conductor silk screen layer will follow the steel plate to move in the sintering furnace, so that the first conductor silk screen layer passes through a plurality of temperature zones in the sintering furnace, and then the first conductor sintering operation is completed to obtain the first conductor layer. For example, the temperature zones of the sintering furnace are 200℃-200℃-200℃-450℃-550℃-650℃-780℃-850℃-850℃-850℃-850℃-765℃ (the error value of each temperature zone is ±3℃). The mesh speed in the sintering furnace is 180mm / min.

[0062] Step S123: preparing a second conductor layer on the first conductor layer.

[0063] The second conductor layer is used to improve the conductivity of the conductor layer. Optionally, the second conductor layer is made of conductive material. For example, the second conductor layer is made of silver resistance paste.

[0064] Optionally, this step includes: performing a second conductor screen printing operation on the first conductor layer to obtain a second conductor screen printed layer; and performing a second conductor sintering operation on the second conductor screen printed layer to obtain a second conductor layer.

[0065] Optionally, in order to ensure the quality of the second conductor silk screen layer obtained by the second conductor silk screen printing operation, certain requirements are imposed on the processing environment, for example, the processing humidity is required to be 40%-60%, the processing temperature is required to be 22-26°C, and the positive pressure in the silk screen printing room is required to be 3±2Pa.

[0066] Optionally, the second conductor screen printing operation is implemented by a screen printer. Exemplarily, the parameters of the screen printer are set as follows: the release height is 3-5 mm, the air pressure is 0.4-0.65 MPa, the screen printing speed is 150, and the scraper pressure is 4±0.5 mm.

[0067] Optionally, the stencil used in the second conductor screen printing operation is a FS1435C conductor stencil.

[0068] Optionally, the second conductor layer has a thickness of 12±5 μm.

[0069] Optionally, the second conductor sintering operation is achieved through a sintering furnace, and a plurality of temperature zones are provided in the sintering furnace, and each temperature zone is provided with a corresponding temperature. When the second conductor sintering operation is performed, the second conductor silk screen layer will follow the steel plate to move in the sintering furnace, so that the second conductor silk screen layer passes through a plurality of temperature zones in the sintering furnace, and then the second conductor sintering operation is completed to obtain the second conductor layer. For example, the temperature zones of the sintering furnace are 200°C-200°C-200°C-450°C-550°C-650°C-780°C-850°C-850°C-850°C-850°C-765°C (the error value of each temperature zone is ±3°C). The mesh speed in the sintering furnace is 180mm / min.

[0070] Step S124: preparing a resistance layer on the second conductor layer.

[0071] The resistor layer is used to set a specific resistance value. Optionally, the resistor layer uses a resistor material. For example, the resistor layer uses a carbon-based material, a metal oxide material, or a metal material.

[0072] Optionally, this step includes: performing a resistor screen printing operation on the second conductor layer to obtain a resistor screen printed layer; and performing a resistor sintering operation on the resistor screen printed layer to obtain a resistor layer.

[0073] Optionally, in order to ensure the quality of the resistor silk screen layer obtained by the resistor silk screen printing operation, there are certain requirements for the processing environment. For example, the processing humidity requires 40%-60%, the processing temperature requires 22-26℃, and the positive pressure between the silk screens requires 3±2Pa.

[0074] Optionally, the resistor screen printing operation is implemented by a screen printer. Exemplarily, the parameters of the screen printer are set as follows: the release height is 3-5 mm, the air pressure is 0.4-0.65 MPa, the screen printing speed is 150, and the scraper pressure is 4±0.5 mm.

[0075] Optionally, the stencil used for the resistor screen printing operation is the FS1435C resistor stencil.

[0076] Optionally, the resistance line gap in the resistance layer is 1.1±0.05 mm, and the resistance line width is 5.6±0.05 mm.

[0077] Optionally, the resistor sintering operation is achieved through a sintering furnace, and a plurality of temperature zones are provided in the sintering furnace, and each temperature zone is provided with a corresponding temperature. When the resistor sintering operation is performed, the resistor silk screen layer will move in the sintering furnace following the steel plate, so that the resistor silk screen layer passes through a plurality of temperature zones in the sintering furnace, and then the resistor sintering operation is completed to obtain the resistor layer. For example, the temperature zones of the sintering furnace are 200℃-200℃-200℃-450℃-550℃-650℃-780℃-850℃-850℃-850℃-850℃-765℃ (the error value of each temperature zone is ±3℃). The mesh speed in the sintering furnace is 180mm / min.

[0078] Optionally, the resistance of the resistor layer is 1.38-1.6Ω.

[0079] Step S125: preparing a covering layer on the resistance layer.

[0080] The covering layer is used to protect other film layers in the electric heating film. Optionally, the covering layer is made of insulating material. For example, the covering layer is made of ceramic material or polymer material.

[0081] Optionally, this step includes: performing a covering silk screen printing operation on the resistance layer to obtain a covering silk screen layer; and performing a covering sintering operation on the covering silk screen layer to obtain a covering layer.

[0082] Optionally, in order to ensure the quality of the silk screen layer obtained by the silk screen printing operation, there are certain requirements for the processing environment. For example, the processing humidity requires 40%-60%, the processing temperature requires 22-26°C, and the positive pressure between the silk screens requires 3±2Pa.

[0083] Optionally, the overlay screen printing operation is implemented by a screen printer. Exemplarily, the parameters of the screen printer are set as follows: the release height is 3-5 mm, the air pressure is 0.4-0.65 MPa, the screen printing speed is 150, and the scraper pressure is 4±0.5 mm.

[0084] Optionally, the stencil used for the overlay screen printing operation is the FS1435C overlay stencil.

[0085] Optionally, the film thickness of the covering layer is 30±5 μm.

[0086] Optionally, the covering sintering operation is realized by a sintering furnace, and a plurality of temperature zones are arranged in the sintering furnace, and each temperature zone is arranged with a corresponding temperature. When the covering sintering operation is performed, the covering silk screen layer will move with the steel plate in the sintering furnace, so that the covering silk screen layer passes through a plurality of temperature zones in the sintering furnace, and then the covering sintering operation is completed to obtain the covering layer. For example, the temperature zones of the sintering furnace are 200℃-200℃-200℃-450℃-550℃-650℃-780℃-850℃-850℃-850℃-850℃-765℃ (the error value of each temperature zone is ±3℃). The mesh speed in the sintering furnace is 180mm / min.

[0087] Step S13: Detecting the performance parameters of the electric heating film.

[0088] Optionally, the performance parameters include resistance parameters, withstand voltage parameters and insulation resistance parameters.

[0089] Exemplarily, the resistance parameter is obtained by a resistance measuring instrument, the withstand voltage parameter is obtained by a withstand voltage tester, and the insulation resistance parameter is obtained by an insulation resistance tester.

[0090] Step S14: When the performance parameters are qualified, assembling a heating cavity on the second surface of the steel plate to obtain an electric heating film heater.

[0091] Exemplarily, qualified performance parameters include: resistance parameter of 1.35-1.57Ω, withstand voltage parameter ≥DC500V / 5S5mA, insulation resistance parameter ≥1MΩ, DC1000V.

[0092] For example, please refer to Figure 3 , Figure 3 The schematic diagram of the structure of an electric film heater provided by an embodiment of the present application is shown. The electric film heater includes an electric film 31, a steel plate 21 and a heating cavity, and the heating cavity includes a bottom plate 33, a box body 32 and a flow channel (located inside the box body 32, not shown in the figure). The flow channel is a channel structure for guiding the flow of fluid. Optionally, the bottom plate 33 and the box body 32 are made of aluminum.

[0093] Exemplarily, in an embodiment of the present application, a steel plate with an electric heating film is welded to a heating cavity by a brazing method. Exemplarily, the heating cavity is placed on a tooling, and the brazing flux is evenly applied to the welding surface of the heating cavity; an aluminum foil is placed on the welding surface of the heating cavity; a steel plate is placed on the aluminum foil, and the steel plate is facing the aluminum foil; and brazing is performed. Among them, the brazing step is achieved by a high-temperature furnace, and the box body moves together with the steel plate in the high-temperature furnace, so that it passes through multiple temperature zones in the high-temperature furnace, and then the brazing is completed. For example, the temperature zones in the high-temperature furnace are 645℃-655℃-660℃-665℃-660℃-650℃. The mesh speed in the high-temperature furnace is 170mm / min.

[0094] Furthermore, in order to ensure the quality of brazing, this embodiment has specific requirements for the brazing agent, specifically 331 brazing agent: pure water = 1:0.6, and the two need to be stirred evenly before use. During the use of the brazing agent, the brazing agent needs to be stirred continuously. The brazing agent of this ratio can ensure the quality of brazing, and the temperature required for brazing will not damage the electric heating film.

[0095] Furthermore, in this embodiment, the soldering flux is evenly applied to the welding surface of the heating cavity by a syringe to control the amount of the soldering flux and prevent the amount of the soldering flux from being too much or too little.

[0096] In another aspect of this embodiment, in order to protect the surface of the electric heating film, the electric heating film needs to be sandblasted. Exemplarily, the blasting frequency of the sandblasting machine is 30 Hz, the frequency of the large turntable is 4 Hz, and the frequency of the small turntable is 8 Hz.

[0097] Furthermore, since the electric heating film is sandblasted, the size of the steel plate and the electric heating film may be affected, so it is necessary to perform another cutting process to ensure the size standard of the steel plate and the electric heating film. Exemplarily, the cutting process is performed by a laser cutting machine, and the parameters of the laser cutting machine are set as follows: air pressure is 1.3-1.5MPa, nozzle diameter is 1.5mm, and speed is 16m / min.

[0098] In the actual processing, the bottom plate and the box body need to be welded together to obtain a heating cavity. For example, the bottom plate and the box body are welded by laser welding technology, for example, the bottom plate and the box body are placed on a welding tool; under the protection of an argon atmosphere, the laser spot is focused on the weld to perform welding.

[0099] Furthermore, in order to ensure the cleanliness of the heating cavity, the bottom plate and the box body need to be cleaned before welding. Exemplarily, the bottom plate and the box body are placed in a cleaning iron frame; the cleaning iron frame is placed in a cleaning tank for cleaning; the bottom plate and the box body are rinsed; the bottom plate and the box body are placed in a drying tank for drying. Optionally, the temperature of the cleaning liquid used in the cleaning tank is 60-65°C, the concentration of the cleaning liquid used is 10%, and the type of cleaning liquid used is AP-802 aluminum degreasing and rust removing agent; the temperature of the drying tank is set to 80°C. Optionally, the cleaning time of the cleaning tank is 5-10 minutes. Optionally, the rinsing process needs to be performed twice, each time lasting 5-10 minutes. Optionally, the drying time of the drying tank is 20-25 minutes.

[0100] Furthermore, the cavity can be heated for leak detection to verify the welding quality. For example, the welding point between the bottom plate and the box body is tested for leaks at an atmospheric pressure of 0.15 MPa; if there is no leak, it means that the welding quality meets the requirements.

[0101] In summary, by adopting the above technical solution, a first conductive layer is added between the second conductive layer and the dielectric layer to improve the connection strength between the conductive layer and the dielectric layer, which can prevent the conductive layer from falling off the dielectric layer and improve the reliability of the electric heating film.

[0102] In the following embodiments, when preparing the dielectric layer, the first conductor layer, the second conductor layer, the resistor layer and the covering layer, two steps of screen printing and sintering are required. For the screen printing step, the surface of the film layer may be uneven, affecting the subsequent sintering operation. Therefore, in order to solve the above-mentioned problem, this application takes the screen printing of the resistor layer as an example for explanation (the processing flow of other film layers is similar to this), and the embodiment of this application discloses a processing method for the resistor screen printing layer. Figure 4 The processing method of the resistor silk screen layer includes: Step S401: Detecting the flatness of the resistor silk-screen layer.

[0103] Flatness is used to describe the flatness of the surface of the resistor silk-screen layer. Furthermore, flatness can also describe the fluctuation on the resistor silk-screen layer. Exemplarily, the measuring probe is controlled to move on the surface of the resistor silk-screen layer and the height changes of the surface of the resistor silk-screen layer are recorded; the flatness of the resistor silk-screen layer is determined according to the height changes.

[0104] Step S402: determining the raised area and the recessed area on the resistor silk-screen layer according to the flatness.

[0105] Optionally, the surface of the resistor silk-screen layer is compared with an ideal flat surface by flatness to obtain a raised area and a recessed area, wherein an ideal platform surface refers to a surface without fluctuations in theory. The raised area refers to an area that is raised relative to the ideal flat surface and whose maximum raised height is greater than a preset error, and the recessed area refers to an area that is recessed relative to the ideal flat surface and whose maximum recessed height is greater than a preset error.

[0106] Step S403: determining a target convex area and a target concave area according to the distance between the convex area and the concave area, wherein the distance between the target convex area and the target concave area is less than a distance threshold.

[0107] The distance threshold is a preset distance value, and the specific value can be adjusted according to the material of the resistor silk-screen layer.

[0108] Optionally, a circle is drawn with the convex area as the center and the distance threshold as the radius. If there is a concave area in the circle, the convex area is taken as the target convex area, and the concave area in the circle is taken as the target concave area; if there is no concave area in the circle, the convex area is not the target convex area.

[0109] Step S404: obtaining a connection line from the target raised area to the target sunken area and the direction of the connection line.

[0110] Exemplarily, the highest point in the target raised area is obtained; the lowest point in the target recessed area is obtained; the line from the highest point to the lowest point is regarded as the line from the target raised area to the target recessed area in this step, and the direction of the line from the highest point to the lowest point is regarded as the direction of the line from the target raised area to the target recessed area in this step.

[0111] Exemplarily, a convex projection of a target convex area on a horizontal plane is obtained; the convex centroid of the convex projection is calculated and obtained; a concave projection of a target concave area on a horizontal plane is obtained; the concave centroid of the concave projection is calculated and obtained; a line connecting the convex centroid to the concave centroid is regarded as a line connecting the target convex area to the target concave area in this step, and a direction of a line connecting the convex centroid to the concave centroid is regarded as a direction of a line connecting the target convex area to the target concave area in this step.

[0112] Exemplarily, the longest line segment AB between the target raised area and the target recessed area is obtained, point A is located in the target raised area, and point B is located in the target recessed area. Then the line segment AB is regarded as the line connecting the target raised area to the target recessed area in this step, and the directed line segment from A to B is regarded as the direction of the line connecting the target raised area to the target recessed area in this step.

[0113] Step S405: With the target raised area as the starting point and the target sunken area as the end point, the scraper is controlled to move, the moving direction of the scraper is the same as the direction of the connecting line, and the scraper and the connecting line are at a preset angle.

[0114] Please refer to Figure 5 When the scraper 51 pushes the resistive silk-screen material in the target raised area 53, because the material is in powder form, the material will move to both sides of the scraper. If the target raised area 53 is too far from the target recessed area 52, only a part of the material in the target raised area will be filled into the target recessed area 52, resulting in insufficient material filling in the target recessed area 52. Therefore, in this step, when the target raised area 53 is too far from the target recessed area 52, the scraper and the connecting line will be at a preset angle. Although the material will still move to both sides of the scraper, due to the existence of the preset angle, the material filled from the target raised area 53 to the target recessed area 52 will increase.

[0115] In this embodiment, the preset angle is related to the length of the connection. When the length of the connection is less than the preset critical value, the preset angle is 90 degrees; when the length of the connection is greater than the preset critical value, the preset angle satisfies α=90-k(xa), where α is the preset angle, k is a positive number, x represents the length of the connection (in mm), and a represents the preset critical value. The value of k is related to the material used in the resistor silk screen layer. For example, when the resistor silk screen layer uses a carbon-based material, k is 1.36.

[0116] In summary, the excess resistor layer constituents in the target raised area can be transferred to the target recessed area without performing a correction operation on the entire resistor silk-screen layer, so a more refined correction operation can be performed on the resistor silk-screen layer.

[0117] In the following embodiments, if there are multiple target concave areas corresponding to the target convex areas, then the control plate method of the scraper needs to be adjusted according to the distribution of the multiple target concave areas and the target convex areas. The present application embodiment discloses a method for processing a resistive silk screen layer. Figure 6 The processing method of the resistor silk screen layer includes: Step S601: when there are at least two target concave regions, obtain the distribution of the target concave regions relative to the target convex regions.

[0118] Exemplarily, the relative position of the target concave area with respect to the target convex area is obtained; and the distribution condition is obtained according to the distribution of the relative position in the target convex area.

[0119] Step S602: When the distribution is point cloud distribution, the center point of the scraper is controlled to coincide with the target raised area.

[0120] Point cloud distribution refers to the distribution of the target concave area around the target convex area. For example, take any point in the target convex area as the origin and establish a plane rectangular coordinate system; if the target concave area is distributed in at least three quadrants, it is considered that the distribution of the target concave area meets the point cloud distribution.

[0121] Exemplarily, the highest point in the target raised area is obtained; and the center point of the scraper is controlled to coincide with the highest point.

[0122] Exemplarily, a convex projection of a target convex area on a horizontal plane is obtained; a convex centroid of the convex projection is calculated and obtained; and a center point of the scraper is controlled to coincide with the convex centroid.

[0123] Step S603: Control the reciprocating motion of the scraper with the center point of the scraper as the origin.

[0124] Taking the center point of the scraper as the origin, controlling the reciprocating motion of the scraper can disperse the resistive silk-screen layer material in the target raised area, so that the target recessed area is filled.

[0125] Step S604: when the distribution is half-space distribution, determine a first target concave region farthest from the target convex region among the target concave regions.

[0126] The half-space distribution means that there is a straight line passing through the target convex area, so that all the target concave areas are on one side of the straight line.

[0127] Exemplarily, the longest distance between each target recessed region and the target raised region is calculated; the maximum value among the longest distances is taken, and the target recessed region corresponding to the maximum value is obtained as the first target recessed region.

[0128] Step S605: obtaining a critical dividing line according to the space dividing line of the half-space distribution and the first target concave area, wherein the space dividing line is parallel to the critical dividing line.

[0129] The space dividing line is tangent to the target convex region, and the space dividing line makes the target convex region and all the target concave regions located on one side of the space dividing line.

[0130] Exemplarily, a line parallel to the space dividing line is drawn so as to pass through the first target recessed area; when the distance between the parallel line and the space cutting line reaches a maximum value, the parallel line is determined as a critical dividing line.

[0131] Step S606: Control the scraper to move back and forth between the space dividing line and the critical dividing line.

[0132] When the scraper moves back and forth between the spatial dividing line and the critical dividing line, the material in the target raised area is dispersed into the target recessed area.

[0133] In summary, different methods can be selected to correct the resistor silk-screen layer according to the different distributions of the recessed areas, so as to ensure the flatness of the resistor silk-screen layer.

[0134] In the following embodiments, when the target recessed area is distributed in a half-space, if there is a discrete target recessed area in the target recessed area, and the discrete target recessed area is far away from other target recessed areas, it may cause the material of the target raised area to be unable to be pushed into the discrete target recessed area by the scraper. Therefore, the embodiment of the present application discloses a method for processing a resistive silk screen layer. Figure 7 The processing method of the resistor silk screen layer includes: Step S701: When the distribution is a half-space distribution, a clustering operation is performed on the target concave area to obtain a clustering result.

[0135] Exemplarily, k target concave areas are randomly selected from the target concave areas, and the k target concave areas are used as the cluster centers of k clusters; each target concave area is assigned to the cluster closest to it; the mean of each cluster is calculated, and the updated mean is used as the new cluster center; the above two steps are repeated until the change of the cluster center is less than the preset threshold, and the obtained cluster is the clustering result.

[0136] Exemplarily, a neighborhood radius and a minimum number are set; the number of target concave areas included in the neighborhood radius of each target concave area is calculated; the number of target concave areas in the neighborhood radius that is greater than the minimum number is set as the recursive center point; starting from the recursive center point, the target concave areas within the neighborhood radius are recursively added to the same cluster; the target concave areas that are not added to any cluster are clustered separately to obtain clustering results.

[0137] Step S702: Determine whether there is a discrete clustering result in the clustering result.

[0138] A discrete clustering result is a clustering result in which the number of target recessed areas included is less than the preset lower limit, and the minimum distance between the cluster center and other cluster centers is greater than the preset upper limit. For example, let the preset lower limit be 2 and the preset upper limit be 20 mm. If there is only one target recessed area in the clustering result, and the distance between the clustering result and the nearest clustering result is 25 mm, then this clustering result is a discrete clustering result. A discrete clustering result indicates that the target recessed area in the clustering result is far away from other target recessed areas, and in the process of moving the scraper, it is difficult for the scraper to push the excess material in the target protruding area into both at the same time.

[0139] In contrast to the discrete clustering result, the agglomerated clustering result is a clustering result in which the number of target concave areas included is greater than a preset lower limit, and the minimum distance between the cluster center and other cluster centers is less than a preset upper limit.

[0140] Step S703: If not, executing the step of controlling the scraper to move between the space dividing line and the critical dividing line.

[0141] For details, please refer to Figure 6 Step S606 of the illustrated embodiment will not be described in detail here.

[0142] Step S704: If yes, then set the line from the target raised area to the clustering result as the first path.

[0143] Optionally, if the clustering results include multiple clustering results, the first clustering center closest to the target raised area is determined in advance; the connection line from the target raised area to the first clustering result is recorded; with the first clustering result as the starting point, a first broken line segment is set so that the first broken line segment passes through other clustering results; and the first path is obtained based on the aforementioned connection line and the first broken line segment.

[0144] Step S705: setting the line from the aggregate clustering result to the discrete clustering result as the second path.

[0145] Optionally, if the discrete clustering results include multiple ones, record the connection line from the aggregate clustering result to the first discrete clustering result, the first discrete clustering result is the discrete clustering result closest to the aggregate clustering result; take the first discrete clustering result as the starting point, set a second broken line segment, and make the second broken line segment pass through other aggregate discrete clustering results; obtain the second path based on the aforementioned connection line and the second broken line segment.

[0146] Step S706: Control the scraper to move along the first path and the second path in sequence.

[0147] When the scraper is controlled to follow the first path and the second path in sequence, the target recessed area of ​​the clustering result can be pre-filled, thereby improving the filling efficiency.

[0148] In summary, when there are discrete target recessed areas in the target recessed area, the scraper is moved along the first path and the second path, so that the excess resistance layer constituents in the target raised area can be better transferred to the target recessed area.

[0149] In the following embodiments, when preparing the dielectric layer, the first conductor layer, the second conductor layer, the resistor layer and the covering layer, two steps of screen printing and sintering are required. For the sintering step, the quality of the sintered layer may be unqualified due to the unsatisfactory temperature of the sintering furnace. Therefore, in order to solve the above problems, this application takes the sintering of the resistor layer as an example for explanation (the processing flow of other film layers is similar to this), and the embodiment of this application discloses a sintering method of the resistor layer. Figure 4 , the sintering method of the resistance layer comprises: Step S801: setting the temperature of each temperature zone in the sintering furnace according to a preset sintering standard.

[0150] The preset sintering standard includes the preset temperature of each temperature zone in the sintering furnace. Exemplarily, the temperature of the temperature zone of the sintering furnace is 200°C-200°C-200°C-450°C-550°C-650°C-780°C-850°C-850°C-850°C-850°C-765°C.

[0151] Step S802: Control the steel plate to move in the sintering furnace so that the resistor silk-screen layer moves along with the steel plate in the sintering furnace.

[0152] Because there are multiple temperature zones inside the sintering furnace, when the steel plate and the resistor silk-screen layer move inside the sintering furnace, the resistor silk-screen layer will also be affected by the temperature of different temperature zones, thereby completing the sintering operation.

[0153] Exemplarily, the moving speed is 180 mm / min.

[0154] Step S803: While the steel plate is moving in the sintering furnace, the film surface information of the resistor silk-screen layer is obtained, where the film surface information includes color, integrity and smoothness.

[0155] Integrity refers to the degree to which the surface of the resistor screen printing layer remains intact.

[0156] Smoothness refers to the flatness of the film surface of the resistor silk-screen layer. In some embodiments, smoothness can be represented by surface roughness.

[0157] Exemplarily, an observation port is provided on the sintering furnace, and a camera can obtain a film surface image of the resistor silk-screen layer through the observation port; and determine the film surface information through the film surface image.

[0158] Step S804: adjusting the moving speed of the steel plate according to the membrane surface information.

[0159] For example, the present application discloses a method for processing a resistive silk-screen layer. Fig. 9 The processing method of the resistor silk screen layer includes steps S901 to S906, and the specific contents are as follows: Step S901: When the film surface information meets the preset abnormality index, the temperature zone of the steel plate is obtained.

[0160] Exemplarily, the preset abnormal indicators include that the difference between the RGB value of the color and the preset RGB value is greater than the preset RGB difference, or the completeness is less than 98%, or the smoothness is less than 0.5.

[0161] Step S902: Determine whether the temperature of the current temperature zone is the same as the temperature of the previous temperature zone.

[0162] If the temperature of the current temperature zone is the same as the temperature of the previous temperature zone, execute step S903; If the temperature of the current temperature zone is different from the temperature of the previous temperature zone, step S904 is executed.

[0163] Step S903: If yes, adjust the moving speed of the steel plate according to the membrane surface information.

[0164] When the temperature in the current temperature zone is the same as the temperature in the previous temperature zone, and there is a problem with the film surface of the resistor silk-screen layer, it means that the residence time of the resistor silk-screen layer in the temperature zone is not appropriate and the residence time needs to be adjusted. Therefore, this step adjusts the aforementioned residence time by adjusting the moving speed of the steel plate.

[0165] For example, when the smoothness of the resistor silk-screen layer is less than 0.5, it indicates that the sintering is not completed, and the moving speed of the steel plate needs to be reduced to extend the time of the resistor silk-screen layer in the sintering furnace.

[0166] For example, when the integrity of the resistor silk-screen layer is less than 98%, it indicates that the sintering is over-performed, resulting in cracks on the surface of the resistor layer. The moving speed of the steel plate needs to be increased to shorten the time the resistor silk-screen layer stays in the sintering furnace.

[0167] Step S904: If not, compare the temperature of the current temperature zone with the temperature of the previous temperature zone.

[0168] If the current temperature is greater than the temperature of the previous temperature zone, execute step S905; If the current temperature is lower than the temperature of the previous temperature zone, step S906 is executed.

[0169] Step S905: if the temperature of the current temperature zone is greater than the temperature of the previous temperature zone, lower the temperature of the current temperature zone.

[0170] When the temperature of the current temperature zone is higher than the temperature of the previous temperature zone and problems occur in the resistor silk-screen layer during the sintering process, it indicates that the temperature of the current temperature zone is too high and the temperature of the current temperature zone needs to be lowered.

[0171] Step S906: if the temperature of the current temperature zone is lower than the temperature of the previous temperature zone, then the temperature of the current temperature zone is increased.

[0172] When the temperature of a temperature zone is lower than the temperature of a previous temperature zone and problems occur in the resistor silk-screen layer during the sintering process, it indicates that the temperature of the temperature zone is too low and the temperature of the temperature zone needs to be increased.

[0173] In summary, from step S901 to step S906, according to the temperature relationship between the current temperature zone and the previous temperature zone, a suitable method is selected to improve the sintering process, so that the aforementioned improved process is closer to the actual situation, thereby obtaining a better sintering effect.

[0174] Step S805: After the steel plate leaves the sintering furnace, a resistance layer is obtained.

[0175] After the steel plate passes through various temperatures of the sintering furnace, it is equivalent to a sintering operation on the resistor silk-screen layer, thereby transforming the resistor silk-screen layer into a resistor layer.

[0176] In another aspect of this embodiment, when the steel plate moves in the sintering furnace, the sintering method of the steel plate is updated according to the membrane surface information table, and the sintering method includes sintering temperature and sintering time. Determine the target sintering furnace corresponding to the sintering temperature in the aforementioned sintering method. Transfer the steel plate to the target sintering furnace. And adjust the position of the steel plate in the target sintering furnace according to the sintering time in the aforementioned sintering method. Exemplarily, when the steel plate is located in a sintering furnace at 200°C, it is determined according to the membrane surface information that the steel plate needs to enter a sintering furnace at 550°C and sinter for 30 seconds. Then, the steel plate is moved to a sintering furnace at 500°C, and the position of the steel plate in the sintering furnace is adjusted according to the sintering time and the moving speed, so that the steel plate leaves the sintering furnace at 500°C after 30 seconds.

[0177] Further, according to the length of the target sintering furnace and the moving speed of the steel plate, the maximum residence time of the steel plate in the target sintering furnace is determined. If the maximum residence time is less than the sintering time, N is obtained, wherein N is a positive odd number, and the ratio of the sintering time to N is less than the maximum residence time. The ratio of the sintering time to N is calculated. The target position of the steel plate in the target sintering furnace is set according to the ratio. A first transformation step is executed, and the first transformation step includes: when it is detected that the steel plate will leave the target sintering furnace, the moving direction of the steel plate is changed, so that the steel plate moves toward the target position. A second transformation step is executed, and the second transformation step includes when it is detected that the steel plate will reach the target position, the moving direction of the steel plate is changed, so that the steel plate moves in the direction of leaving the sintering furnace, wherein the number of executions of the first transformation step and the second transformation step is N-1. When the number of executions of the first transformation step and the second transformation step reaches N-1, the execution of the first transformation step and the second transformation step is stopped. Exemplarily, N is set to 3, and after the steel plate is placed at the target position, the steel plate will move in the direction of leaving the target sintering furnace. When the steel plate is about to leave the sintering furnace, the moving direction of the steel plate is switched so that the steel plate moves toward the target position. When the steel plate is about to reach the target position, the moving direction of the steel plate is switched so that the steel plate moves away from the target sintering furnace. When the steel plate is about to leave the target sintering furnace again, since the execution times of the first conversion step and the second conversion step have reached 2 times, the first conversion step or the second conversion step will not be executed again, and the steel plate can directly leave the target sintering furnace.

[0178] Furthermore, when the first steel plate and the second steel plate are transferred to the target sintering furnace, the first sintering time corresponding to the first steel plate and the second sintering time corresponding to the second steel plate are obtained. The distance value from the target position to the target sintering furnace is recorded. If the target position exists, the ratio of the first sintering time to the distance value is an odd number, and the ratio of the second sintering time to the distance value is an odd number. Then the first steel plate and the second steel plate are both placed at the target position. At this time, the first steel plate and the second steel plate move synchronously in the target sintering furnace, and the moving distance after each execution of the first transformation step and the second transformation step is the same, so that the movement of the first steel plate and the second steel plate does not affect each other.

[0179] In summary, when the resistor silk-screen layer is sintered, the moving speed of the steel plate can be adjusted in real time according to the film surface information, so that the resistor silk-screen layer can form a resistor layer that meets the requirements.

[0180] Based on the same inventive concept, the embodiment of the present application provides an electric film heater processing system, including: An acquisition module 1001 is used to acquire performance parameters, flatness and distribution of the resistor layer, preset sintering standards, film surface information and preset abnormal indicators; Memory 1002, used to store a program of any one of the above-mentioned electrothermal film heater processing methods; Processor 1003, the program in the memory can be loaded and executed by the processor to implement any of the above-mentioned electric film heater processing methods.

[0181] In summary, by adopting the above technical solution, a first conductive layer is added between the second conductive layer and the dielectric layer to improve the connection strength between the conductive layer and the dielectric layer, which can prevent the conductive layer from falling off the dielectric layer and improve the reliability of the electric heating film.

[0182] Those skilled in the art can clearly understand that for the convenience and simplicity of description, only the division of the above-mentioned functional modules is used as an example. In actual applications, the above-mentioned functions can be assigned to different functional modules as needed, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above. The specific working process of the system, device and unit described above can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here.

[0183] An embodiment of the present application provides a computer-readable storage medium storing a computer program that can be loaded by a processor and execute a method for processing an electric heating film heater.

[0184] Computer storage media include, for example, various media that can store program codes, such as USB flash drives, mobile hard disks, read-only memories (ROM), random access memories (RAM), magnetic disks or optical disks.

[0185] Based on the same inventive concept, an embodiment of the present application provides an intelligent terminal, including a memory and a processor, wherein the memory stores a computer program that can be loaded by the processor and executes a method for processing an electric heating film heater.

[0186] Those skilled in the art can clearly understand that for the convenience and simplicity of description, only the division of the above-mentioned functional modules is used as an example. In actual applications, the above-mentioned functions can be assigned to different functional modules as needed, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above. The specific working process of the system, device and unit described above can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here.

[0187] The above are all preferred embodiments of the present application, and are not intended to limit the protection scope of the present application. Any feature disclosed in this specification (including the abstract and drawings), unless otherwise stated, can be replaced by other equivalent or alternative features with similar purposes. That is, unless otherwise stated, each feature is only an example of a series of equivalent or similar features.

Claims

1. A method for processing an electric heating film heater, characterized in that: include: Processing a steel plate, wherein the steel plate is used to support an electric heating film; The electric heating film is prepared on the first surface of the steel plate, wherein the electric heating film comprises a dielectric layer, a first conductor layer, a second conductor layer, a resistance layer and a covering layer in sequence on the first surface of the steel plate; The step of preparing the electric heating film on the first surface of the steel plate comprises: preparing the dielectric layer on the first surface of the steel plate; preparing the first conductor layer on the dielectric layer, wherein the first conductor layer is used to improve the connection strength between the conductor layer and the dielectric layer; preparing the second conductor layer on the first conductor layer; preparing the resistance layer on the second conductor layer; and preparing the covering layer on the resistance layer. Detecting performance parameters of the electric heating film; When the performance parameters are qualified, a heating cavity is assembled on the second surface of the steel plate to obtain an electric heating film heater.

2. The method for processing an electric heating film heater according to claim 1, characterized in that: The step of preparing the resistance layer on the second conductor layer comprises: Performing a resistance screen printing operation on the second conductor layer to obtain a resistance screen printed layer; The resistor silk-screen layer is subjected to a resistor sintering operation to obtain the resistor layer, and the thickness of the resistor layer is 12±5 μm.

3. The method for processing an electric heating film heater according to claim 2, characterized in that: Before performing the resistance sintering operation on the resistor to obtain the resistor layer, the method further comprises: Detecting the flatness of the resistor silk-screen layer; Determine the raised area and the recessed area on the resistor silk-screen layer according to the flatness; Determining a target convex area and a target concave area according to a distance between the convex area and the concave area, wherein the distance between the target convex area and the target concave area is less than a distance threshold; Obtaining a connection line from the target raised area to the target sunken area and a connection line direction; The target raised area is taken as a starting point and the target recessed area is taken as an end point, and the scraper is controlled to move. The moving direction of the scraper is the same as the direction of the connecting line, and the scraper forms a preset angle with the connecting line.

4. The method for processing an electric heating film heater according to claim 3, characterized in that: The method further comprises: When there are at least two target concave areas, obtaining distribution of the target concave areas relative to the target convex areas; When the distribution is a point cloud distribution, the center point of the scraper is controlled to coincide with the target raised area; and the scraper is controlled to reciprocate with the center point of the scraper as the origin; When the distribution is a half-space distribution, determine the first target concave area in the target concave area that is farthest from the target convex area; obtain a critical dividing line based on the spatial dividing line of the half-space distribution and the first target concave area, and the spatial dividing line is parallel to the critical dividing line; control the scraper to move back and forth between the spatial dividing line and the critical dividing line.

5. The method for processing an electric heating film heater according to claim 4, characterized in that: The method further comprises: When the distribution is a half-space distribution, performing a clustering operation on the target concave area to obtain a clustering result; Determining whether the clustering results include discrete clustering results; If not, executing the step of controlling the scraper to move between the space dividing line and the critical dividing line; If yes, then the line from the target raised area to the clustering result is set as the first path; The clustering results are aggregated into the discrete The connection line of clustering results is set as the second path; The scraper is controlled to move along the first path and the second path in sequence.

6. The method for processing an electric heating film heater according to claim 2, characterized in that: The step of performing a resistance sintering operation on the resistance silk-screen layer to obtain the resistance layer comprises: According to the preset sintering standard, set the temperature of each temperature zone in the sintering furnace; Controlling the steel plate to move in the sintering furnace so that the resistance silk-screen layer moves along with the steel plate in the sintering furnace; When the steel plate moves in the sintering furnace, obtaining the film surface information of the resistance silk screen layer, wherein the film surface information includes color, integrity and smoothness; adjusting the moving speed of the steel plate according to the membrane surface information; After the steel sheet leaves the sintering furnace, the resistor layer is obtained.

7. The method for processing an electric heating film heater according to claim 6, characterized in that: The method further comprises: When the film surface information meets the preset abnormal index, obtaining the temperature zone of the steel plate; Determine whether the temperature in the current temperature zone is the same as the temperature in the previous temperature zone; If yes, adjusting the moving speed of the steel plate according to the membrane surface information; If not, comparing the temperature of the current temperature zone with the temperature of the previous temperature zone; If the temperature of the temperature zone is greater than the temperature of the previous temperature zone, lowering the temperature of the temperature zone; If the temperature of the current temperature zone is lower than the temperature of the previous temperature zone, the temperature of the current temperature zone is increased.

8. An electric film heater processing system, characterized in that: include: An acquisition module is used to obtain performance parameters, flatness and distribution of the resistor layer, preset sintering standards, film surface information and preset abnormal indicators; A memory for storing a program of a method for processing an electric heating film heater according to any one of claims 1 to 7; The program in the memory can be loaded and executed by the processor to implement the method for manufacturing an electric heating film heater as claimed in any one of claims 1 to 7.

9. An intelligent terminal, characterized in that: The method comprises a memory and a processor, wherein the memory stores a computer program which can be loaded by the processor and executes the method for manufacturing an electric heating film heater according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that: The device stores a computer program which can be loaded by a processor and executes the method for manufacturing an electric heating film heater according to any one of claims 1 to 7.

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