X-ray imaging detection module and manufacturing method thereof

Abstract

The invention discloses an X-ray imaging detection module and a manufacturing method thereof. The X-ray imaging detection module includes: a circuit board; the sensing material layer is used for converting the X-ray penetrating through the detected target into an electric signal; the first circuit is used for processing an electric signal provided by the sensing material; the first circuit is formed on the circuit board, the second circuit is formed on the circuit board and is used for supplying power to the sensing material layer and the first circuit and carrying out signal processing, the X-ray imaging detection module further comprises an interconnection layer, and the interconnection layer is electrically connected with the sensing material layer and the first circuit and provides electrodes connected with the second circuit. According to the X-ray imaging detection module, the high-density sensing material layer and the first circuit are arranged on the interconnection layer, and the low-density second circuit is arranged on the circuit board, so that the device is simple in structure, simple in manufacturing process, low in cost and good in performance.

Description

Technical Field

[0001] The present invention relates to the technical field of radiation detectors, and more particularly to an X-ray imaging detection module and a manufacturing method thereof. Background Art

[0002] With the development of society, X-ray imaging technology has become an increasingly important technology and is widely used in medical care, security inspection, industrial flaw detection, non-destructive testing and other fields.

[0003] Currently, the image recognition accuracy of X-ray imaging detection modules based on X-ray imaging technology is gradually improving, requiring smaller and smaller pixels in these modules. At the same time, to improve production efficiency and increase detection speed, the number of X-ray imaging detection modules is increasing. As a result, the number of signals that X-ray sensors need to transmit is increasing, making signal fan-out in the circuit system increasingly difficult. Detector modules manufactured using specialized processes such as through silicon vias (TSVs) or advanced printed circuit boards (PCBs) are expensive, difficult to implement, and have poor reliability.

[0004] Therefore, it is desired to provide an X-ray imaging detection module with better performance, greater simplicity, feasibility, and relatively low cost to solve the above problems. Summary of the Invention

[0005] In view of the above problems, an object of the present invention is to provide an X-ray imaging detection module and a manufacturing method thereof, so that the device has a simple structure, a simple manufacturing process, low cost and good performance.

[0006] According to one aspect of the present invention, there is provided an X-ray imaging detection module, comprising: a circuit board; a sensing material layer for converting X-rays penetrating an object to be inspected into electrical signals; a first circuit for processing the electrical signals provided by the sensing material; and a second circuit formed on the circuit board for supplying power to the sensing material layer and the first circuit and performing signal processing, wherein the X-ray imaging detection module further comprises an interconnection layer, which is electrically connected to the sensing material layer and the first circuit, respectively.

[0007] Optionally, the interconnection layer includes a first electrode area, a second electrode area and a third electrode area, and a fourth electrode area is provided on the circuit board, the first electrode area is electrically connected to the sensing material layer, the second electrode area is electrically connected to the first circuit layer, the first electrode area is electrically connected to the second electrode area, the second electrode area is electrically connected to the third electrode area, the third electrode area is connected to the fourth electrode area, and the fourth electrode area is electrically connected to the second circuit.

[0008] Optionally, the interconnection layer also includes a single-layer or multi-layer metal layer, and adjacent metal layers are electrically isolated by an insulating dielectric layer. The single-layer or multi-layer metal layer forms multiple signal interconnection lines to electrically connect the first electrode area with the second electrode area, and to electrically connect the second electrode area with the third electrode area.

[0009] Optionally, the insulating dielectric layer and the metal layer of the interconnection layer are alternately formed on a semiconductor substrate, the top of the interconnection layer also includes a passivation layer covering the top metal layer, the first electrode area includes a plurality of first electrodes, the second electrode area includes a plurality of second electrodes, the third electrode area includes a plurality of first pads, the passivation layer has openings at positions corresponding to the first electrode area, the second electrode area and the third electrode area, and the first electrode, the second electrode and the first pad are plated structures located in the openings.

[0010] Optionally, the sensing material layer includes a plurality of pixel units arranged in an array, and the plurality of pixel units are correspondingly connected to one end of the signal interconnection line of the interconnection layer. The first circuit includes a plurality of signal channels, and the plurality of signal channels are correspondingly connected to the other end of the signal interconnection line of the interconnection layer.

[0011] Optionally, the third electrode region of the interconnection layer includes a plurality of first pads, the fourth electrode region of the circuit board includes a plurality of second pads, and the plurality of first pads and the plurality of second pads are electrically connected via bonding wires.

[0012] Optionally, the first circuit includes a single or multiple integrated circuit chips.

[0013] Optionally, the integrated circuit chip is fixedly connected to the interconnection layer via a conductive material, and the conductive material is solder or conductive glue.

[0014] Optionally, the second circuit includes a plurality of discrete components, which are connected to a plurality of electrode pads on the circuit board and are electrically connected through metal wires on the circuit board.

[0015] Optionally, the interconnect layer, the sensing material layer and the first circuit constitute at least a part of a component, and a plurality of the components are provided on a single circuit board.

[0016] According to a second aspect of the present invention, there is provided a method for manufacturing an X-ray imaging detection module, comprising: forming an interconnection layer; connecting a first circuit to the interconnection layer; connecting a sensing material layer to the interconnection layer; forming a second circuit on a circuit board; and assembling a component onto the circuit board, the component comprising the interconnection layer, the first circuit and the sensing material layer, wherein assembling the component onto the circuit board comprises: the interconnection layer comprising a plurality of first solder pads, the circuit board comprising a plurality of second solder pads, the plurality of first solder pads and the plurality of second solder pads being electrically connected via bonding wires, and the component being fixed to the circuit board by bonding.

[0017] Optionally, the interconnection layer includes a first electrode region, a second electrode region and a third electrode region, the first electrode region includes a plurality of first electrodes, the second electrode region includes a plurality of second electrodes, and the third electrode region includes a plurality of first pads, and forming the interconnection layer includes: injecting ions into a semiconductor substrate, the semiconductor substrate doped ions and the implanted ions have the same conductivity type; forming at least one isolation layer and at least one metal layer on the semiconductor substrate to form a plurality of signal interconnection lines, the at least one isolation layer and the at least one metal layer are alternately arranged, and a conductive contact is formed in the isolation layer so that the metal layers are connected to each other; forming a passivation layer covering the top metal layer; forming openings at positions of the passivation layer corresponding to the first electrode region, the second electrode region and the third electrode region; and performing a plating process on the metal layer exposed to the opening to form a plating structure, the first electrode, the second electrode and the first pad are the plating structure located in the opening.

[0018] The X-ray imaging detection module and its manufacturing method provided by the present invention concentrate components requiring high-density interconnection on the module, components requiring low-density interconnection on the circuit board, and finally interconnect the module and circuit board. Before being assembled on the circuit board, the components can be individually tested, ensuring pre-assembly yield, simplifying the production process, and improving product yield. When more than one component is assembled on a single circuit board, product yield is significantly improved, reducing product cost.

[0019] In some optional embodiments, interconnect signal lines and metal electrodes are grown on a semiconductor substrate using a simple semiconductor high-density interconnection process, and then a low-cost chemical plating process is used to form a weldable and bondable electrode coating on the metal electrode. Therefore, the interconnection layer of the semiconductor structure of the present application can be interconnected with the first circuit (chip), circuit board, and sensing material layer using welding technology and / or bonding technology, thereby achieving a direct connection between the chip (interconnection layer) and the chip (first circuit). The present application welds the first circuit (semiconductor chip) to the interconnection layer, then assembles the sensing material layer onto the interconnection layer, and finally assembles the module formed by the above process onto the circuit board using a low-cost patch and bonding process. Through this new process and structure, the low cost of the new X-ray imaging detection module can be achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The above and other objects, features and advantages of the present invention will become more apparent through the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:

[0021] Figure 1 shows a schematic diagram of an X-ray imaging system;

[0022] Figure 2a shows a cross-sectional view of an X-ray imaging system;

[0023] Figure 2b shows a cross-sectional view of another X-ray imaging system;

[0024] Figure 3 Shown according to Figure 2b The waveform diagram of the charge pulse signal formed after the X-ray photons of the X-ray imaging system pass through the sensor material;

[0025] Figure 4a shows a top view of an X-ray imaging detection module according to an embodiment of the present invention;

[0026] Figure 4b shows a top view of an assembly according to an embodiment of the present invention;

[0027] Figure 4c shows a partial top view of an X-ray imaging detection module according to an embodiment of the present invention;

[0028] Figure 4d shows a side view of an X-ray imaging detection module according to an embodiment of the present invention;

[0029] Figure 5 A cross-sectional view showing a method for manufacturing an X-ray imaging detection module according to an embodiment of the present invention;

[0030] Figure 6The flowchart of the manufacturing method of the X-ray imaging detection module according to the embodiment of the present invention is shown. DETAILED DESCRIPTION

[0031] The present invention will be described in more detail below with reference to the accompanying drawings. In each of the accompanying drawings, identical elements are represented by similar reference numerals. For the sake of clarity, the various parts in the accompanying drawings are not drawn to scale. In addition, some well-known parts may not be shown in the drawings.

[0032] Many specific details of the present invention are described below, such as device structures, materials, dimensions, processing techniques, and technologies, to provide a clearer understanding of the present invention. However, as will be appreciated by those skilled in the art, the present invention may be practiced without these specific details.

[0033] It should be understood that the connection between A and B in the embodiment of the present application means that A and B can be connected in series or in parallel, or A and B are connected through other devices, and the embodiment of the present application is not limited to this.

[0034] The following describes an embodiment of the X-ray imaging detection module provided in the present application with reference to the accompanying drawings.

[0035] Figure 1 shows a schematic diagram of an X-ray imaging system; Figure 2a A cross-sectional view of an X-ray imaging system is shown.

[0036] like Figure 1 and 2aAs shown, the X-ray imaging system 100 includes an X-ray imaging detection module 103 and a radiation source 101. Optionally, the X-ray imaging detection module 103 and the radiation source 101 are mounted on a frame. After the X-rays released by the radiation source 101 penetrate the target 102, they are received by the X-ray imaging detection module 103. Specifically, the X-ray imaging detection module 103 includes a collimator 201, a scintillator array 202, a photodiode 203 and a circuit board 204 arranged in sequence from top to bottom. Optionally, the collimator 201, the scintillator array 202 and the photodiode 203 are bonded together by glue, or the collimator 201 is mounted on a bracket and suspended above the scintillator array 202 through the bracket, and the scintillator array 202 and the photodiode 203 are bonded together by glue. After the X-rays penetrate the target 102, the collimator 201 absorbs most of the scattered rays, and the X-rays carrying the information of the target are absorbed by the scintillator array 202 on the X-ray imaging detection module 103. The scintillator 202 converts the X-rays into light signals, which are absorbed by the photodiode 203 below and converted into charge signals. The charge signals are then converted into voltage signals or digital signals by the charge processing chip on the circuit board 204 (which can be FR4, ceramic-based, or other forms of substrate materials) and sent to the data acquisition and processing system. The image of the target is then reconstructed through the image algorithm and the inspection task is finally completed.

[0037] In most of the aforementioned applications, when installing the detector card / module, the midpoint of the card in the X-axis is perpendicular to the focal point of the radiation source 101. The target's movement is perpendicular to the plane defined by the X and Y axes. In the detector system described above, the X-ray imaging detection modules 103 are cascaded along the X-axis, spliced ​​to a length sufficient to cover the target. Common materials used for the scintillator array 202 include CsI(Tl), CdWO4, Gd2O2S, GGAG, and ZnSe.

[0038] In some embodiments, the scintillator array 202 is divided into a plurality of first pixels 301, and the photodiode 203 is divided into a plurality of second pixels 302. Each first pixel 301 corresponds to each second pixel 302. From a top view, the pixels 303 within the X-ray imaging detection module 103 include a first pixel 301 and a corresponding second pixel 302. The number of pixels in the Z direction is typically referred to as the number of rows, which is typically greater than or equal to 1. The number of pixels in the X direction is typically referred to as the number of channels, which is typically greater than or equal to 2.

[0039] In other embodiments, the scintillator array 202 is a thin film scintillator, which is an integral planar layer without pixel division. The photodiode 203 is divided into a plurality of second pixels 302 , and each second pixel 302 receives a light signal provided by the scintillator in its corresponding area.

[0040] Figure 2b shows a cross-sectional view of another X-ray imaging system; Figure 3 Shown according to Figure 2b The waveform of the charge pulse signal formed after the X-ray photons of the X-ray imaging system pass through the sensor material.

[0041] In recent years, a new type of detector (also known as photon counting detector)104 is being developed, such as Figure 2b As shown. The difference between this novel detector and the aforementioned X-ray imaging detection module 103 is that, in this novel detector, the traditional scintillator array 202 and photodiode array 203 are replaced by a novel conversion material 206 (common materials include CdTe, CdZnTe, pure Si, compound semiconductors, etc.), which can convert each X-ray photon corresponding to a different energy into a charge pulse of different heights. These pulses arrive randomly in the time direction, and the time interval is related to the intensity of the radiation source and the characteristics and size of the conversion material, as shown in FIG. Figure 3 shown.

[0042] like Figure 2b The X-ray conversion material 206 of the novel detector 104 shown is composed of many pixels 304 at the microscopic level. The detector can be arranged in a single row or multiple rows in the Z direction, as shown in FIG. Figure 2b The row within the dotted box represents a single row of detectors. As the number of rows arranged in the Z direction increases, the scanning speed and image quality of the detectors can be continuously improved. 305 is the anode electrode, and 306 is the cathode electrode. The electrode materials can be metals such as gold, platinum, and aluminum.

[0043] The novel detector 104 receives X-rays and converts them into charge pulses through the conversion material 206. For example, an exemplary waveform of a charge pulse can be found in Figure 3 The charge pulses pass through the pulse signal processing circuit or chip 220 on the circuit board, which performs signal waveform conditioning on the charge pulses arriving at a certain moment and counts them according to energy levels (T1, T2, ..., Tn) or performs analog quantization counting on the voltage after the pulse peak is maintained. The number of counts represents the intensity of the radiation within this energy threshold range. Finally, the image algorithm is used to process the data within different energy thresholds and perform image reconstruction.

[0044] The advantages of the common new detector 104 are relatively low cost and the ability to use large area pixels, up to 40mm 2Large pixels or multiple rows of pixels enable faster scanning speeds, meeting the needs of general material or biological scanning inspections and enabling coarse classification of inorganic, organic, and mixed materials. Traditional integrating detector performance has reached a bottleneck. For example, the increase in electronic noise is approaching its limit. Furthermore, because the scintillator in integrating detectors converts a lot of information about the different energy levels of the target being inspected into a relatively single wavelength of light through integration, much information about the material's properties is lost.

[0045] By designing a new type of detector 104, the electronic system noise of the system can be greatly reduced, the spatial resolution and contrast-to-noise ratio of the image can be improved, and the image resolution capability under small signal conditions can be improved. Since the continuous energy spectrum of X-rays is divided and the image is reconstructed separately, the information of the target with different energy levels carried by the rays of different energy levels after passing through the target can improve the recognition capability of the target material. At the same time, the dose used by the X-ray inspection equipment can also be reduced. In medical applications, K-edge imaging can be used to reduce the demand for contrast agents and improve the contrast of soft tissues.

[0046] With the continuous development of technology, medical / security / industrial X-ray inspection system equipment is gradually improving the image recognition accuracy, requiring the pixels of the new detectors 104 to be smaller and smaller, usually less than 0.8mm*0.8mm. At the same time, in order to achieve improved production efficiency and faster detection speed, the number of rows of new detectors 104 is also increasing, resulting in an increasing number of X-ray sensor signals and increasing difficulty in fanning out the signals in the circuit system. Detector modules that are manufactured based on special processes such as through silicon via (TSV) technology or high-end PCB interconnect layers and are finally assembled are expensive, difficult to apply, and have poor reliability.

[0047] Figure 4a shows a top view of an X-ray imaging detection module according to an embodiment of the present invention; Figure 4b shows a top view of an assembly according to an embodiment of the present invention; Figure 4c shows a partial top view of an X-ray imaging detection module according to an embodiment of the present invention; Figure 4d FIG. 4 shows a side view of an X-ray imaging detection module according to an embodiment of the present invention.

[0048] like Figures 4a-4d As shown, in this embodiment, the X-ray imaging detection module 400 includes a circuit board 410, an interconnection layer 420, a sensing material layer 421, a first circuit 422 and a second circuit 411. Figure 4b As shown, the structure composed of the interconnection layer 420, the sensing material layer 421, and the first circuit 422 can be referred to as a component 440. For the sake of clarity, Figure 4bThe transparent solid line frames are used to respectively show the sensing material layer 421 and the first circuit 422, so as to facilitate understanding of the positional relationship among the sensing material layer 421, the first circuit 422, the first electrode region and the second electrode region. Optionally, the X-ray imaging detection module 400 further includes a connector 412. The working principle of the X-ray imaging detection module 400 can be found in Figure 2a or Figure 2b , I will not go into details here.

[0049] The circuit board 410 is used to connect the second circuit 411 and the interconnect layer 420. The circuit board 410 also serves as a support for the entire X-ray imaging detection module 400 structure. It is constructed, for example, from FR4, ceramic, or other substrate materials. The circuit board 410 is rectangular or square, with mounting holes 413 defined in each corner to facilitate securing the circuit board 410 to other structures or packaging the X-ray imaging detection module 400.

[0050] The interconnection layer 420 is located on the circuit board 410. The interconnection layer 420 includes a first electrode region 424 and a second electrode region 425, and optionally also includes a third electrode region 426. The interconnection layer 420 is a semiconductor structure, which is manufactured based on a semiconductor wafer. For example, the interconnection layer 420 includes a semiconductor substrate and at least one isolation layer and at least one metal layer formed on the semiconductor substrate. The at least one isolation layer and the at least one metal layer are arranged alternately, thereby forming multiple signal interconnection lines 427, 428 and multiple first electrodes 424a located in the first electrode region 424, multiple second electrodes 425a located in the second electrode region 425, and multiple first pads 426a located in the third electrode region 426. The first electrode region 424 and the second electrode region 425 are interconnected, and the second electrode region 425 and the third electrode region 426 are interconnected. For example, through holes are distributed on the isolation layer to facilitate the connection between the metal layers and the electrical connection between the metal layers and the semiconductor substrate. A passivation layer is also provided on top of the interconnection layer 420. The passivation layer covers the surface of the top metal layer (i.e., the metal layer farthest from the semiconductor substrate). The passivation layer has openings, and a plating structure is formed within the openings. The plating structure serves as the first electrode, second electrode, and first pad of the interconnection layer 420. The openings in the passivation layer are also referred to as passivation layer windows. For example, the semiconductor substrate is a single crystal silicon wafer, and the metal layer can be a single metal layer or a multi-layer metal layer. For example, the signal interconnects 427 and 428 are made of gold, silver, aluminum, or copper. The first electrode 424a, the second electrode 425a, and the first pad 426a are made of gold, silver-gold plating, aluminum-nickel-gold plating, copper-nickel-gold plating, or conductive glue. The isolation layer is an oxide layer, and the passivation layer is an oxide or salt protective layer.

[0051] In traditional semiconductor processes, the electrodes of semiconductor structures are often directly electrically connected using an exposed top metal layer. This process is not suitable for directly interconnecting a semiconductor structure with another semiconductor structure. In an embodiment of the present invention, since a first electrode, a second electrode, and a first pad of a plated structure are formed on the top metal layer of the interconnection layer, the interconnection layer of the semiconductor structure can also be interconnected with the first circuit (chip), circuit board, and sensing material layer using welding technology and / or bonding technology. The present application realizes a direct connection between the chip (interconnection layer) and the chip (first circuit). Compared to traditional semiconductor structures, the interconnection layer of the present application can firmly interconnect structures such as circuit boards, circuit chips, and sensing material layers, and has high compatibility.

[0052] See Figure 4c In the interconnection layer 420, the first electrode area 424 includes a plurality of first electrodes 424a, the second electrode area 425 includes a plurality of second electrodes 425a, and the third electrode area 426 includes a plurality of first pads 426a. The first electrodes 424a are connected to the second electrodes 425a through signal interconnection lines 427 (also referred to as first wires), and the second electrodes 425a are connected to the first pads 426a through signal interconnection lines 428 (also referred to as second wires).

[0053] The first electrode region 424 is used to connect to the sensing material layer 421, and the sensing material layer 421 is used to convert the X-rays to be detected related to the detected target into electrical signals. Figure 2a As shown, the sensing material layer 421 includes, for example, a scintillator array and a photodiode array. Common materials of the scintillator array 202 are: CsI(Tl), CdWO4, Gd2O2S, GGAG, ZnSe and other scintillator materials. When the working principle of the X-ray imaging detection module 400 is as follows Figure 2bAs shown, the sensing material layer 421 is a novel conversion material, with common materials including CdTe, CdZnTe, pure Si, and compound semiconductors. Optionally, the sensing material layer 421 includes a plurality of pixel units arranged in an array. The first electrode region 424 includes a plurality of first electrodes 424a corresponding to the plurality of pixel units. The plurality of first electrodes 424a are electrically connected to one end of a signal interconnect line 427 of the interconnect layer 420 in a one-to-one correspondence. The first circuit includes a plurality of signal channels, which are electrically connected to the other end of the signal interconnect line 427 of the interconnect layer in a one-to-one correspondence. Optionally, a support structure is provided between the sensing material layer 421 and the interconnect layer 420, ensuring a predetermined spacing between the sensing material layer 421 and the interconnect layer 420. The pixel units are connected to the corresponding first electrodes 424a via a conductive material. The electrode 430 can, for example, provide a high-voltage power supply, which supplies high voltage electricity to the sensing material layer 421 via a wire 431. The wire 431 can be a flexible circuit board connection wire or an electrode bonding wire.

[0054] The second electrode area 425 is used to connect to the first circuit 422, the second circuit 411 provides power to the first circuit 422 and the sensing material layer 421, the first circuit 422 is used to cooperate with the second circuit 411 on the circuit board 410 to complete signal processing, and finally send the data containing image information to the upper-level system through the connector 412 on the circuit board 410 for image reconstruction.

[0055] The first circuit 422 and the second circuit 411 process the electrical signals to obtain image information of the inspected object. The first circuit 422 may be a circuit with a high-density interconnection process, such as a chip, an integrated circuit, or a microprocessor. The second circuit 411 includes some electronic components and / or low-density packaged chips. These electronic components and chips are interconnected via wires on a circuit board and have a lower circuit density. For example, these circuit components may include processors, capacitors, resistors, inductors, and other relatively large electronic components, resulting in a lower circuit density.

[0056] For example, the first circuit 422 is first flipped and soldered to the interconnection layer 420 through a reflow soldering process. After cleaning and drying, an electrode is formed in the first electrode area 424 of the interconnection layer 420 through conductive glue, and then the anode of the sensing material layer 421 is coupled to the first electrode area 424 of the interconnection layer 420, and the conductive glue is cured. In order to keep a certain distance between the sensing material layer 421 and the interconnection layer 420, support balls can be added to the conductive glue, or a support sheet can be added between the two. After cleaning and drying, glue is filled between the interconnection layer 420 and the first circuit 422 and the sensing material layer 421 to enhance its reliability and prevent moisture / dust from entering between the two, causing leakage and thus affecting function and performance. Through the above process, the interconnection layer 420, the sensing material layer 421, and the first circuit 422 form a component.

[0057] As an example, to establish a connection between interconnect layer 420 and circuit board 410, interconnect layer 420 includes a third electrode region 426. The electrode spacing in this third electrode region is designed to conform to the circuit board's electrode design rules, enabling a transition from high-density interconnection to low-density interconnection. A fourth electrode region 414 is provided on the circuit board, with the second circuit 411 connected to the fourth electrode region 414. A first solder pad 426a in the third electrode region 426 of interconnect layer 420 is electrically connected to a second solder pad 414a in the fourth electrode region 414 of the circuit board via a bonding wire 415 in a one-to-one correspondence. The interconnect layer 420 and circuit board 410 are mechanically connected via an adhesive bonding process. For example, epoxy, silicone, or polyurethane adhesive is used to mechanically bond the interconnect layer 420 and circuit board 410. Bond wires 415 are filled with adhesive via a wire protection process to enhance reliability and prevent moisture and dust intrusion. The sensor cathode electrode 306 of the component and the electrode of the circuit board 410 or the connector 430 are interconnected through a bonding process or a connector, and finally the X-ray imaging detection module 400 designed in this article is formed.

[0058] In some embodiments, the X-ray imaging detection module 400 includes multiple components formed by an interconnect layer 420, a sensing material layer 421, and a first circuit 422. These components are disposed on a circuit board 410. Before assembling the interconnect layer 420 and circuit board 410, the components 106 can be individually tested. This ensures component yield before assembly, simplifies the production process, and improves product yield. When more than one component is assembled on a circuit board 410, product yield is significantly improved, product costs are reduced, and product performance is enhanced.

[0059] Figure 5 FIG2 shows a cross-sectional view of a method for manufacturing an X-ray imaging detection module according to an embodiment of the present invention. Figure 5, an exemplary step of forming an interconnection layer is shown. In this example, the semiconductor substrate is an N-type single crystal silicon wafer.

[0060] First, provide a single crystal silicon wafer 501, such as Figure 5 As shown in step S1, the single crystal silicon wafer parameters suitable for interconnect layer fabrication are calculated, such as the appropriate resistivity and the parameters for subsequent implantation steps based on an N-type substrate (or a P-type substrate).

[0061] Furthermore, ions are implanted into the semiconductor substrate, and the conductivity type of the implanted ions and the semiconductor substrate doping ions are the same. For example, phosphorus ions, arsenic ions or antimony ions are implanted into a single crystal silicon wafer, and after the implantation is completed, the N+ type junction 502 is activated. Figure 5 In some other embodiments, if the semiconductor substrate is a P-type substrate, the implanted ions are boron ions, which are activated to form a P+ type junction after the implantation is completed.

[0062] like Figure 5 As shown in steps S3-S10, at least one isolation layer and at least one metal layer are formed on the semiconductor substrate, and the at least one isolation layer and the at least one metal layer are arranged alternately. The at least one metal layer includes a plurality of first electrodes located in the first electrode region, a plurality of second electrodes located in the second electrode region, a plurality of first pads located in the third electrode region, a first wire connecting at least a portion of the plurality of first electrodes to at least a portion of the plurality of second electrodes, and a second wire connecting at least a portion of the plurality of second electrodes to at least a portion of the plurality of first pads.

[0063] Specifically, a first isolation layer 503 is generated, such as Figure 5 As shown in step S3.

[0064] Furthermore, etching is performed on the first isolation layer 503 to form a contact hole that can be connected to the N+ type (or P+ type) junction, such as Figure 5 As shown in step S4.

[0065] Further, the first metal layer 504 is deposited, as shown in FIG. Figure 5 As shown in step S5.

[0066] Furthermore, the first metal layer 504 is etched to form a first layer of signal interconnection lines, such as Figure 5 As shown in step S6.

[0067] Furthermore, a second isolation layer 505 is generated on the formed first signal interconnection layer, as shown in FIG. Figure 5 As shown in step S7.

[0068] Furthermore, the second isolation layer 505 is etched to form a through hole that can be connected to the first metal layer, such as Figure 5 As shown in step S8.

[0069] Further, a second metal layer 506 is deposited, such as Figure 5 As shown in step S9.

[0070] Furthermore, the second metal layer 506 is etched to form a second layer of signal interconnection lines, such as Figure 5 As shown in step S10.

[0071] The above steps are only for two metal layers. If there are multiple metal layers, the steps for forming each subsequent metal layer are repeated. Figure 5 The steps shown in steps S7-S10 in FIG.

[0072] Further, a passivation layer is formed on at least one isolation layer and at least one metal layer. For example, a passivation layer 507 is deposited on the last layer of signal interconnects, such as Figure 5 As shown in step S11.

[0073] Furthermore, the passivation layer 507 on the last metal layer at the electrode position to be used is etched to form an opening, for example, openings are formed at positions of the passivation layer corresponding to the first electrode region, the second electrode region and the third electrode region, so as to expose the last metal electrode layer, such as Figure 5 As shown in step S12.

[0074] Furthermore, the entire wafer is subjected to a surface coating process to form a coating structure suitable for welding or bonding processes on the surface of the last metal electrode layer. For example, a coating process is performed on the metal layer exposed to the opening to form a coating structure, which includes at least a plurality of first electrodes, a plurality of second electrodes, and a plurality of first pads located in the opening.

[0075] In this step, the first electrode, the second electrode and the first pad of the plated structure are formed on the top metal layer of the interconnection layer, so the interconnection layer of the semiconductor structure can also be interconnected with the first circuit (chip), the circuit board and the sensing material layer using welding technology and / or bonding technology.

[0076] Furthermore, the wafer is diced and cut to obtain an interconnection layer of a required size.

[0077] Figure 6 The flowchart of the manufacturing method of the X-ray imaging detection module according to the embodiment of the present invention is shown.

[0078] In step S601, an interconnection layer is formed, and the interconnection layer includes a first electrode region and a second electrode region. The steps of forming the interconnection layer can be referred to Figure 5 , I will not go into details here.

[0079] In step S602, the first circuit is connected to the interconnect layer. Specifically, the first circuit is connected to the second electrode region.

[0080] In step S603, the sensing material layer is connected to the interconnection layer. Specifically, the sensing material layer is connected to the first electrode region, and the sensing material layer is used to convert the X-rays to be detected related to the detected object into electrical signals.

[0081] In step S604, a second circuit is formed on the circuit board. Optionally, the density of the second circuit is less than the density of the first circuit.

[0082] In step S605, the assembly is assembled onto a circuit board. The assembly includes an interconnect layer, a first circuit, and a sensing material layer. Specifically, the interconnect layer is connected to the circuit board, which is connected to the second circuit. The first circuit and the second circuit are used to process the electrical signal to obtain image information of the detected object.

[0083] Optionally, a fourth electrode area is provided on the circuit board, and connecting the interconnection layer to the circuit board includes: connecting the second circuit to the fourth electrode area through a metal wire located on the circuit board, electrically connecting the third electrode area of ​​the interconnection layer to the fourth electrode area of ​​the circuit board through a bonding wire, so that the first circuit located on the interconnection layer is electrically connected to the second circuit; and mechanically connecting the interconnection layer and the circuit board through a bonding process.

[0084] In summary, embodiments of the present invention provide an X-ray imaging detection module and its manufacturing method, which centralizes components requiring high-density interconnection on the module assembly, components requiring low-density interconnection on the circuit board, and finally interconnects the module assembly and circuit board. Before being assembled on the circuit board, the components can be individually tested, ensuring pre-assembly yield, simplifying the production process, and improving product yield. When more than one component is assembled on a single circuit board, product yield is significantly improved, reducing product cost.

[0085] In some optional embodiments, interconnect signal lines and electrodes are grown on a semiconductor substrate using a simplified semiconductor high-density interconnect process. A low-cost chemical plating process is then used to form a solderable and bondable electrode coating. The first circuit (semiconductor chip) is then soldered to the interconnect layer, and the sensing material layer is then assembled onto the interconnect layer. Finally, the module formed in this manner is assembled onto a circuit board using low-cost placement and bonding processes. This novel process and structure can achieve a low-cost approach to the production of new X-ray imaging detection modules.

[0086] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus comprising the element.

[0087] While embodiments of the present invention have been described above, these embodiments do not exhaustively describe all details and do not limit the invention to the specific embodiments described. Obviously, many modifications and variations are possible based on the above description. These embodiments are selected and described in detail in this specification in order to better explain the principles and practical applications of the present invention, thereby enabling those skilled in the art to better utilize the present invention and its modifications. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. An X-ray imaging detection module, comprising: Circuit boards; A sensing material layer, used to convert the X-rays penetrating the inspected object into electrical signals; A first circuit, used for processing the electrical signal provided by the sensing material; as well as A second circuit is formed on the circuit board and is used to supply power to the sensing material layer and the first circuit and perform signal processing. Wherein, the X-ray imaging detection module further includes an interconnection layer, and the interconnection layer is electrically connected to the sensing material layer and the first circuit respectively.

2. The X-ray imaging detection module according to claim 1, wherein: The interconnection layer includes a first electrode area, a second electrode area and a third electrode area, and a fourth electrode area is provided on the circuit board. The first electrode area is electrically connected to the sensing material layer, the second electrode area is electrically connected to the first circuit layer, the first electrode area is electrically connected to the second electrode area, the second electrode area is electrically connected to the third electrode area, the third electrode area is connected to the fourth electrode area, and the fourth electrode area is electrically connected to the second circuit.

3. The X-ray imaging detection module according to claim 2, wherein: The interconnection layer includes a single layer or multiple layers of metal layers, and adjacent metal layers are electrically isolated by an insulating dielectric layer. The single layer or multiple layers of metal layers form multiple signal interconnection lines to electrically connect the first electrode area with the second electrode area, and to electrically connect the second electrode area with the third electrode area.

4. The X-ray imaging detection module according to claim 3, wherein: The sensing material layer includes a plurality of pixel units arranged in an array, and the plurality of pixel units are correspondingly connected to one end of the signal interconnection line of the interconnection layer. The first circuit includes a plurality of signal channels, and the plurality of signal channels are correspondingly connected to the other end of the signal interconnection line of the interconnection layer.

5. The X-ray imaging detection module according to claim 3, wherein: The insulating dielectric layer and the metal layer of the interconnection layer are alternately formed on a semiconductor substrate, and the top of the interconnection layer further includes a passivation layer covering the top metal layer. The first electrode area includes multiple first electrodes, the second electrode area includes multiple second electrodes, and the third electrode area includes multiple first pads. The passivation layer has openings at positions corresponding to the first electrode area, the second electrode area, and the third electrode area. The first electrode, the second electrode, and the first pad are plated structures located in the openings.

6. The X-ray imaging detection module according to claim 2, wherein: The third electrode region of the interconnect layer includes a plurality of first pads, the fourth electrode region of the circuit board includes a plurality of second pads, and the plurality of first pads and the plurality of second pads are electrically connected via bonding wires.

7. The X-ray imaging detection module according to claim 1, wherein: The first circuit includes a single or multiple integrated circuit chips.

8. The X-ray imaging detection module according to claim 7, wherein: The integrated circuit chip is fixedly connected to the interconnection layer through a conductive material, and the conductive material is a soldering agent or a conductive adhesive.

9. The X-ray detector according to claim 1, characterized in that: The second circuit includes a plurality of discrete components connected to a plurality of electrode pads on the circuit board and electrically connected via metal wires on the circuit board.

10. The X-ray imaging detection module according to claim 1, wherein: The interconnect layer, the sensing material layer and the first circuit constitute at least a portion of an assembly, and a plurality of the assemblies are provided on a single circuit board.

11. A method for manufacturing an X-ray imaging detection module, comprising: forming an interconnection layer; connecting a first circuit to the interconnect layer; connecting a sensing material layer to the interconnect layer; forming a second circuit on the circuit board; as well as assembling a component onto the circuit board, the component comprising the interconnect layer, the first circuit and the sensing material layer, Among them, assembling the component onto the circuit board includes: the interconnection layer includes a plurality of first pads, the circuit board includes a plurality of second pads, the plurality of first pads and the plurality of second pads are electrically connected through bonding wires, and the component is fixed to the circuit board by bonding.

12. The manufacturing method according to claim 11, wherein: The interconnection layer includes a first electrode region, a second electrode region and a third electrode region, the first electrode region includes a plurality of first electrodes, the second electrode region includes a plurality of second electrodes, the third electrode region includes a plurality of first pads, and forming the interconnection layer includes: Implanting ions on a semiconductor substrate, wherein the semiconductor substrate is doped with ions of the same conductivity type as the implanted ions; Forming at least one isolation layer and at least one metal layer on the semiconductor substrate to form a plurality of signal interconnection lines, wherein the at least one isolation layer and the at least one metal layer are arranged alternately, and conductive contacts are formed in the isolation layer so that the metal layers are connected to each other; forming a passivation layer covering the top metal layer; forming openings at positions of the passivation layer corresponding to the first electrode region, the second electrode region, and the third electrode region; and A plating process is performed on the metal layer exposed to the opening to form a plated structure, and the first electrode, the second electrode and the first pad are the plated structure located in the opening.

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