Semiconductor surface treatment method

Abstract

The invention discloses a semiconductor surface treatment method. The method comprises the following steps: cleaning the surface of a semiconductor substrate; depositing a silicon coating on the surface of the cleaned semiconductor substrate by sputtering a silicon target in a vacuum chamber; introducing argon and methane into the vacuum chamber, and depositing on the surface of the silicon coating at an angle of 0 degree to form a diamond-like coating; wherein the flow rate of the argon is 600 sccm, and the flow rate of the methane is 100 sccm. According to the technical scheme, the heat dissipation problem can be solved, the heat dissipation effect is enhanced, the weight of the semiconductor is reduced, and the manufacturing cost is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a semiconductor surface treatment method. Background Art

[0002] As for the heat dissipation structure of the package shell of the current semiconductor production components, some are made of plastic material. The corresponding heat dissipation method is often to add metal sheets to the shell to dissipate heat. Although it can play a certain role in heat dissipation, the heat dissipation effect is not ideal. In addition, since the metal sheet itself is very heavy, it increases the weight of the semiconductor and also increases the manufacturing cost. Summary of the invention

[0003] The purpose of the embodiments of the present invention is to provide a semiconductor surface treatment method, which can solve the heat dissipation problem, enhance the heat dissipation effect, reduce the weight of the semiconductor, and reduce the manufacturing cost.

[0004] In order to achieve the above object, an embodiment of the present invention provides a semiconductor surface treatment method, comprising:

[0005] Cleaning the surface of the semiconductor substrate;

[0006] In a vacuum chamber, a silicon coating is deposited on the surface of a cleaned semiconductor substrate by sputtering a silicon target;

[0007] Argon and methane are introduced into the vacuum chamber to deposit a diamond-like coating on the surface of the silicon coating at an angle of 0 degrees; wherein the argon flow rate is 600 sccm and the methane flow rate is 100 sccm.

[0008] Furthermore, the cleaning process of the surface of the semiconductor substrate specifically includes:

[0009] The ion beam etching method is adopted, and the surface of the semiconductor substrate is cleaned by using an argon-oxygen mixed gas or an argon-ethane mixed gas.

[0010] Furthermore, the step of depositing a silicon coating on the surface of the cleaned semiconductor substrate by sputtering a silicon target specifically includes:

[0011] Argon gas was introduced into the vacuum chamber at an argon flow rate of 800 sccm and a vacuum degree of 2.0×10 -1 Under the operating conditions of Pa, ion source power of 1.0-1.5kW, negative bias of 150-200V, sputtering target power of 1.5-1.8kW and deposition rate of 3.0-4.5 angstroms / second, a silicon coating is deposited on the surface of the cleaned semiconductor substrate by sputtering a silicon target.

[0012] Furthermore, the deposition time of the silicon coating is 10 to 15 minutes.

[0013] Furthermore, the step of introducing argon and methane into the vacuum chamber to deposit a diamond-like coating on the surface of the silicon coating at an angle of 0 degrees specifically includes:

[0014] Argon and methane were introduced into the vacuum chamber. When the argon flow rate was 600 sccm, the methane flow rate was 100 sccm, and the vacuum degree was 3.0×10 -1 Under the operating conditions of 0.0447 W / m2 Pa, ion source power of 2.5-3.0 kW and negative bias voltage of 180-220 V, a diamond-like coating was deposited on the surface of the silicon coating at an angle of 0 degrees.

[0015] Furthermore, the deposition time of the diamond-like carbon coating is 20 minutes.

[0016] Furthermore, the ratio of the thickness of the silicon coating to the thickness of the diamond-like carbon coating is 1:4.5.

[0017] Compared with the prior art, the embodiment of the present invention provides a semiconductor surface treatment method, first, the surface of the semiconductor substrate is cleaned; then, in a vacuum chamber, a silicon coating is deposited on the surface of the cleaned semiconductor substrate by sputtering a silicon target; finally, argon and methane are introduced into the vacuum chamber to deposit a diamond-like coating on the surface of the silicon coating at an angle of 0 degrees; wherein the argon flow rate is 600 sccm and the methane flow rate is 100 sccm. The embodiment of the present invention can solve the heat dissipation problem, enhance the heat dissipation effect, reduce the weight of the semiconductor, and reduce the manufacturing cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a flow chart of a preferred embodiment of a semiconductor surface treatment method provided by the present invention. DETAILED DESCRIPTION

[0019] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this technical field without creative work are within the scope of protection of the present invention.

[0020] The present invention provides a semiconductor surface treatment method. Figure 1 FIG. 1 is a flow chart of a preferred embodiment of a semiconductor surface treatment method provided by the present invention, wherein the method comprises steps S11 to S13:

[0021] Step S11, cleaning the surface of the semiconductor substrate;

[0022] Step S12, in a vacuum chamber, depositing a silicon coating on the surface of the cleaned semiconductor substrate by sputtering a silicon target;

[0023] Step S13, introducing argon gas and methane into the vacuum chamber to deposit a diamond-like coating on the surface of the silicon coating at an angle of 0 degrees; wherein the argon gas flow rate is 600 sccm and the methane flow rate is 100 sccm.

[0024] In the specific implementation, first, the surface of the semiconductor substrate to be coated is cleaned; then, a silicon (Si) coating is deposited, that is, the cleaned semiconductor substrate is placed in a vacuum chamber, and in the vacuum chamber, a silicon coating is deposited on the surface of the cleaned semiconductor substrate by sputtering a silicon target; finally, a DLC (Diamond-like Carbon) coating is deposited, that is, argon (Ar) and methane (CH4) are introduced into the vacuum chamber, and a diamond-like coating (DLC coating) is deposited on the surface of the silicon coating at an angle of 0 degrees; wherein, when depositing the DLC coating, the flow rate of the argon gas introduced into the vacuum chamber is 600sccm, and the flow rate of the methane is 100sccm.

[0025] It should be noted that the traditional DLC coating is deposited on the surface of the semiconductor substrate at a 45-degree angle. Although this DLC coating has good anti-corrosion performance, the energy of the carbon atoms will be lost during the deposition process at a 45-degree angle, resulting in the normal wear resistance of the film being affected. When a 0-degree angle is used for deposition, the horizontal force during the formation of the DLC coating will give the DLC coating good coverage, which will make the DLC coating stronger and more wear-resistant. Therefore, when depositing the DLC coating, the embodiment of the present invention mainly uses a 0-degree angle deposition, and the energy of the carbon atoms will be mainly concentrated in the vertical direction, thereby obtaining a stronger and more wear-resistant DLC coating.

[0026] In another preferred embodiment, the cleaning process of the surface of the semiconductor substrate specifically includes:

[0027] The ion beam etching method is adopted, and the surface of the semiconductor substrate is cleaned by using an argon-oxygen mixed gas or an argon-ethane mixed gas.

[0028] Specifically, in combination with the above embodiments, when cleaning the surface of the semiconductor substrate, the substrate can be cleaned by ion beam etching, and the surface of the semiconductor substrate to be coated can usually be cleaned by argon oxygen mixed gas or argon ethane mixed gas.

[0029] In another preferred embodiment, the step of depositing a silicon coating on the surface of the cleaned semiconductor substrate by sputtering a silicon target specifically comprises:

[0030] Argon gas was introduced into the vacuum chamber at an argon flow rate of 800 sccm and a vacuum degree of 2.0×10 -1 Under the operating conditions of Pa, ion source power of 1.0-1.5kW, negative bias of 150-200V, sputtering target power of 1.5-1.8kW and deposition rate of 3.0-4.5 angstroms / second, a silicon coating is deposited on the surface of the cleaned semiconductor substrate by sputtering a silicon target.

[0031] Specifically, in combination with the above embodiment, when the silicon coating is deposited, it is deposited by sputtering a silicon target, and the deposition rate is generally 3.0 angstroms / second to 4.5 angstroms / second. The parameters for depositing the silicon coating are: argon gas flow rate of 800 sccm, vacuum degree of 2.0×10 -1 Pa, the ion source power is 1.0kW~1.5kW, the negative bias voltage of the workpiece is 150V~200V, the sputtering target is turned on, and the sputtering target power is 1.5kW~1.8kW. Under this operating condition, a silicon coating is deposited on the surface of the cleaned semiconductor substrate by sputtering the silicon target.

[0032] Exemplarily, the value of the ion source power may be 1.0 kW, 1.1 kW, 1.2 kW, 1.3 kW, 1.4 kW or 1.5 kW, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0033] Exemplarily, the value of the negative bias voltage of the workpiece can be 150V, 155V, 160V, 165V, 170V, 175V, 180V, 185V, 190V, 195V or 200V, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0034] Exemplarily, the sputtering target power may be 1.5 kW, 1.6 kW, 1.7 kW or 1.8 kW, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0035] Exemplarily, the value of the deposition rate can be 3.0 angstroms / second, 3.1 angstroms / second, 3.2 angstroms / second, 3.3 angstroms / second, 3.4 angstroms / second, 3.5 angstroms / second, 3.6 angstroms / second, 3.7 angstroms / second, 3.8 angstroms / second, 3.9 angstroms / second, 4.0 angstroms / second, 4.1 angstroms / second, 4.2 angstroms / second, 4.3 angstroms / second, 4.4 angstroms / second or 4.5 angstroms / second, and can also be set according to actual needs, and the embodiments of the present invention are not specifically limited.

[0036] As a preferred solution, the deposition time of the silicon coating is 10 to 15 minutes.

[0037] Specifically, in combination with the above embodiment, when the silicon coating is deposited, the deposition time of the silicon coating is 10 minutes to 15 minutes.

[0038] Exemplarily, the deposition time of the silicon coating may be 10 min, 11 min, 12 min, 13 min, 14 min or 15 min, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0039] In another preferred embodiment, the step of introducing argon and methane into the vacuum chamber to deposit a diamond-like coating on the surface of the silicon coating at an angle of 0 degrees specifically includes:

[0040] Argon and methane were introduced into the vacuum chamber. When the argon flow rate was 600 sccm, the methane flow rate was 100 sccm, and the vacuum degree was 3.0×10 -1 Under the operating conditions of 0.0447 W / m2 Pa, ion source power of 2.5-3.0 kW and negative bias voltage of 180-220 V, a diamond-like coating was deposited on the surface of the silicon coating at an angle of 0 degrees.

[0041] As a preferred solution, the deposition time of the diamond-like carbon coating is 20 minutes.

[0042] Specifically, in combination with the above embodiment, when depositing the DLC coating, argon and methane can be introduced into the vacuum chamber. When the argon flow rate is 600 sccm, the methane flow rate is 100 sccm, and the vacuum degree is 3.0×10 -1 Under the operating conditions of Pa, ion source power of 2.5kW~3.0kW and workpiece negative bias voltage of 180V~220V, the DLC coating is deposited on the surface of the silicon coating at an angle of 0 degree, and the deposition time of the DLC coating is 20min.

[0043] Exemplarily, the value of the ion source power may be 2.5 kW, 2.6 kW, 2.7 kW, 2.8 kW, 2.9 kW or 3.0 kW, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0044] Exemplarily, the value of the negative bias voltage of the workpiece may be 180V, 185V, 190V, 195V, 200V, 205V, 210V, 215V or 220V, and may also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0045] In yet another preferred embodiment, the ratio of the thickness of the silicon coating to the thickness of the diamond-like carbon coating is 1:4.5.

[0046] Specifically, in combination with the above embodiments, after completing the coating process, a silicon coating and a DLC coating are sequentially deposited on the surface of the semiconductor substrate, that is, the silicon coating is deposited on the surface of the semiconductor substrate, and the DLC coating is deposited on the surface of the silicon coating, and the ratio between the thickness of the silicon coating and the thickness of the DLC coating is 1:4.5.

[0047] It should be noted that the thickness ratio of the silicon coating and the DLC coating is very important for the hardness and wear resistance of the film layer. The traditional DLC coating is usually deposited at a 45-degree angle. At a certain total thickness, the thickness ratio of the silicon coating to the DLC coating is equal to 1:2. The embodiment of the present invention uses a 0-degree angle deposition to obtain the DLC coating, and the thickness ratio of the silicon coating to the DLC coating is adjusted from 1:2 to 1:4.5. Under the premise that its performance does not change, the range of heat conduction of the film layer is increased; for example, the traditional solution can reduce the temperature to 36°C ~ 40°C, while the embodiment of the present invention can reduce the temperature to 28°C ~ 30°C.

[0048] In combination with all the above embodiments, the implementation process of the present solution is described below through the first specific embodiment, including: (1) using an ion beam etching method to clean the substrate, and using an argon-oxygen mixed gas or an argon-ethane mixed gas to clean the surface of the semiconductor substrate to be coated; (2) placing the cleaned semiconductor substrate in a vacuum chamber, introducing argon gas into the vacuum chamber, and at an argon gas flow rate of 800 sccm and a vacuum degree of 2.0×10 -1 Pa, ion source power of 1.0 kW, negative bias of 150 V, sputtering target power of 1.5 kW and deposition rate of 3.0 angstroms / second, a silicon coating is deposited on the surface of the cleaned semiconductor substrate by sputtering a silicon target, and the deposition time of the silicon coating is 10 min; (3) Argon and methane are introduced into the vacuum chamber, and the vacuum degree is 3.0×10 -1 Under the operating conditions of 0.3737MW Pa, ion source power of 2.5 kW and negative bias voltage of 180 V, the DLC coating was deposited on the surface of the silicon coating at an angle of 0 degree, and the deposition time of the DLC coating was 20 min; wherein, the ratio of the thickness of the silicon coating to the thickness of the DLC coating was 1:4.5.

[0049] In combination with all the above embodiments, the implementation process of the present solution is described below through a second specific embodiment, including: (1) using an ion beam etching method to clean the substrate, and using an argon-oxygen mixed gas or an argon-ethane mixed gas to clean the surface of the semiconductor substrate to be coated; (2) placing the cleaned semiconductor substrate in a vacuum chamber, introducing argon gas into the vacuum chamber, and at an argon gas flow rate of 800 sccm and a vacuum degree of 2.0×10 -1Pa, ion source power of 1.3 kW, negative bias of 175 V, sputtering target power of 1.7 kW and deposition rate of 3.8 angstroms / second, a silicon coating was deposited on the surface of the cleaned semiconductor substrate by sputtering a silicon target. The deposition time of the silicon coating was 12 min. (3) Argon and methane were introduced into the vacuum chamber. Under the conditions of argon flow rate of 600 sccm, methane flow rate of 100 sccm and vacuum degree of 3.0×10 -1 Under the operating conditions of 0.3737A of Pa, ion source power of 2.7 kW and negative bias voltage of 200 V, the DLC coating was deposited on the surface of the silicon coating at an angle of 0 degree, and the deposition time of the DLC coating was 20 min; wherein, the ratio of the thickness of the silicon coating to the thickness of the DLC coating was 1:4.5.

[0050] In combination with all the above embodiments, the implementation process of the present solution is described below through a third specific embodiment, including: (1) using an ion beam etching method to clean the substrate, and using an argon-oxygen mixed gas or an argon-ethane mixed gas to clean the surface of the semiconductor substrate to be coated; (2) placing the cleaned semiconductor substrate in a vacuum chamber, introducing argon gas into the vacuum chamber, and at an argon gas flow rate of 800 sccm and a vacuum degree of 2.0×10 -1 Pa, ion source power of 1.5 kW, negative bias of 200 V, sputtering target power of 1.8 kW and deposition rate of 4.5 Å / s, a silicon coating was deposited on the surface of the cleaned semiconductor substrate by sputtering a silicon target. The deposition time of the silicon coating was 15 min. (3) Argon and methane were introduced into the vacuum chamber. Under the conditions of argon flow rate of 600 sccm, methane flow rate of 100 sccm and vacuum degree of 3.0×10 -1 Under the operating conditions of 0.03 Pa, ion source power of 3.0 kW and negative bias voltage of 220 V, the DLC coating was deposited on the surface of the silicon coating at an angle of 0 degree, and the deposition time of the DLC coating was 20 min; wherein, the ratio of the thickness of the silicon coating to the thickness of the DLC coating was 1:4.5.

[0051] In summary, the semiconductor surface treatment method provided by the embodiment of the present invention firstly cleans the surface of the semiconductor substrate; then, in a vacuum chamber, a silicon coating is deposited on the surface of the cleaned semiconductor substrate by sputtering a silicon target; finally, argon and methane are introduced into the vacuum chamber to deposit a diamond-like coating on the surface of the silicon coating at an angle of 0 degrees; wherein the argon flow rate is 600 sccm and the methane flow rate is 100 sccm. The embodiment of the present invention can solve the heat dissipation problem, enhance the heat dissipation effect, reduce the weight of the semiconductor, and reduce the manufacturing cost; in addition, the embodiment of the present invention can also play a role in reinforcing plastics, reduce scratches on the plastic surface, and extend its service life.

[0052] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A semiconductor surface treatment method, characterized in that: include: Cleaning the surface of the semiconductor substrate; In a vacuum chamber, a silicon coating is deposited on the surface of a cleaned semiconductor substrate by sputtering a silicon target; Argon and methane are introduced into the vacuum chamber to deposit a diamond-like coating on the surface of the silicon coating at an angle of 0 degrees; wherein the argon flow rate is 600 sccm and the methane flow rate is 100 sccm.

2. The semiconductor surface treatment method according to claim 1, characterized in that: The cleaning process of the surface of the semiconductor substrate specifically includes: The ion beam etching method is adopted, and the surface of the semiconductor substrate is cleaned by using an argon-oxygen mixed gas or an argon-ethane mixed gas.

3. The semiconductor surface treatment method according to claim 1, characterized in that: The method of depositing a silicon coating on the surface of the cleaned semiconductor substrate by sputtering a silicon target specifically includes: Argon gas was introduced into the vacuum chamber at an argon flow rate of 800 sccm and a vacuum degree of 2.0×10 -1 Under the operating conditions of Pa, ion source power of 1.0-1.5kW, negative bias of 150-200V, sputtering target power of 1.5-1.8kW and deposition rate of 3.0-4.5 angstroms / second, a silicon coating is deposited on the surface of the cleaned semiconductor substrate by sputtering a silicon target.

4. The semiconductor surface treatment method according to claim 3, characterized in that: The deposition time of the silicon coating is 10 to 15 minutes.

5. The semiconductor surface treatment method according to claim 1, characterized in that: The step of introducing argon gas and methane into the vacuum chamber to deposit a diamond-like coating on the surface of the silicon coating at an angle of 0 degrees specifically includes: Argon and methane were introduced into the vacuum chamber. When the argon flow rate was 600 sccm, the methane flow rate was 100 sccm, and the vacuum degree was 3.0×10 -1 Under the operating conditions of 0.0447 W / m2 Pa, ion source power of 2.5-3.0 kW and negative bias voltage of 180-220 V, a diamond-like coating was deposited on the surface of the silicon coating at an angle of 0 degrees.

6. The semiconductor surface treatment method according to claim 5, characterized in that: The deposition time of the diamond-like carbon coating is 20 minutes.

7. The semiconductor surface treatment method according to any one of claims 1 to 6, characterized in that: The ratio of the thickness of the silicon coating to the thickness of the diamond-like carbon coating is 1:4.5.

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