Adjustable electromagnetic field mechanism and HDPCVD (High Density Plasma Chemical Vapor Deposition) equipment thereof

Abstract

The invention discloses an adjustable electromagnetic field mechanism and HDPCVD equipment thereof.The adjustable electromagnetic field mechanism comprises an electromagnetic coil and a plurality of electromagnetic shielding assemblies, the electromagnetic shielding assemblies are rotationally and symmetrically arranged around the center of the plane where the electromagnetic coil is located, and each electromagnetic shielding assembly is provided with a shielding face; and the electromagnetic shielding assembly can adjust the angle of the shielding surface relative to the electromagnetic coil so as to adjust the coupling output magnetic field of the electromagnetic coil. According to the adjustable electromagnetic field mechanism and the HDPCVD equipment thereof, the electromagnetic shielding assemblies which are uniformly distributed are arranged right above the electromagnetic coil, the high-frequency magnetic field of the magnetic field is changed by utilizing the electromagnetic shielding assemblies, and the uniformity of the magnetic field of the HDPCVD equipment is adjusted according to the rotation angle of the grounded metal shielding plate, so that the uniformity of plasma is adjusted; and finally, the film deposition quality is improved.

Description

Technical Field

[0001] The invention relates to the technical field of a spray plate mechanism in a semiconductor device, and in particular to an adjustable electromagnetic field mechanism and a HDPCVD device thereof. Background Art

[0002] HDPCVD, or High Density Plasma Chemical Vapor Deposition, is an advanced technology used to deposit thin films in the semiconductor manufacturing process. It combines high gas density, plasma activity, and precise temperature and pressure control to deposit high-quality thin film materials on silicon wafers or other substrates.

[0003] During the deposition process of HDPCVD equipment, electromagnetic fields are used to generate and maintain plasma. If the electromagnetic field distribution is uneven, the plasma distribution in the reaction chamber will be uneven. This uneven plasma distribution will directly affect the deposition rate and film thickness uniformity of the film. However, the magnetic field of the existing electromagnetic structure used to adjust the plasma uniformity is generally fixed and cannot be flexibly adjusted according to the actual magnetic field distribution. Summary of the invention

[0004] The purpose of the present invention is to overcome the deficiencies of the prior art and to provide an adjustable electromagnetic field mechanism and HDPCVD equipment thereof to solve the technical problem that the magnetic field of the prior magnetic field mechanism cannot be adjusted.

[0005] To achieve the above object, the present invention adopts the following technical solutions:

[0006] In the first aspect, an embodiment of the present invention provides an adjustable electromagnetic field mechanism, which includes: an electromagnetic coil and a plurality of electromagnetic shielding components, wherein the plurality of electromagnetic shielding components are rotationally symmetrically arranged about the center of the plane where the electromagnetic coil is located, the electromagnetic shielding component has a shielding surface, and the electromagnetic shielding component can adjust the angle of the shielding surface relative to the electromagnetic coil, thereby adjusting the coupled output magnetic field of the electromagnetic coil.

[0007] Wherein, the electromagnetic shielding assembly comprises a metal shielding plate, one end of which is grounded, and the metal shielding plate can be rotated relative to the plane where the electromagnetic coil is located to adjust the relative angle.

[0008] The metal shielding plate is arranged directly above the electromagnetic coil, and the forward projection of the metal shielding plate at least partially overlaps with the electromagnetic coil.

[0009] Wherein, the electromagnetic shielding assembly further includes a driving member and a rotating shaft connected to a driving end of the driving member, and the metal shielding plate is connected to the rotating shaft.

[0010] Wherein, the electromagnetic coil is a circular electromagnetic coil, and the electromagnetic shielding component is provided with an even array.

[0011] Among them, the plurality of electromagnetic shielding components are distributed at equal central angles with the center of the circular electromagnetic coil as the center.

[0012] Wherein, the relative distance between the metal shielding plate and the electromagnetic coil is not less than 20 mm.

[0013] Wherein, the number of groups of the electromagnetic shielding components is 6-20.

[0014] Wherein, a plurality of groups of the electromagnetic shielding components are distributed directly above the electromagnetic coil at different rotation angles or the same rotation angle.

[0015] In a second aspect, an embodiment of the present invention further provides a HDPCVD device, which includes an adjustable electromagnetic field mechanism as described in any one of the above.

[0016] The adjustable electromagnetic field mechanism and HDPCVD device of the present invention arrange a plurality of groups of uniformly distributed electromagnetic shielding components directly above the electromagnetic coil, utilize the electromagnetic shielding components to change the high-frequency magnetic field of the magnetic field, and adjust the magnetic field uniformity of the HDPCVD device by the rotation angle of the grounded metal shielding plate, thereby adjusting the uniformity of the plasma and ultimately improving the quality of thin film deposition.

[0017] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the following preferred embodiments are specifically cited and described in detail as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 and Figure 2 Schematic diagram of the structure of the adjustable electromagnetic field mechanism as a whole from different viewing angles according to an embodiment of the present invention.

[0019] Figure 3 FIG. 4 is a top view of the adjustable electromagnetic field mechanism according to an embodiment of the present invention.

[0020] Figure 4 for Figure 3 AA section view is shown.

[0021] Figure 5 for Figure 1 The enlarged structural schematic diagram of local A is shown.

[0022] Figure 6 for Figure 4 The enlarged structural schematic diagram of local B is shown.

[0023] Description of reference numerals:

[0024] Adjustable electromagnetic field mechanism 100 , support base 1 , electromagnetic coil 2 , electromagnetic shielding assembly 3 , metal shielding plate 31 , rotating shaft 32 , driving member 33 . DETAILED DESCRIPTION

[0025] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0026] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0027] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships described in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0028] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0029] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be connected, detachably connected, or integrated; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0030] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0031] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms should not be understood as necessarily referring to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0032] During the HDPCVD deposition process, an electromagnetic field is used to generate and maintain plasma. If the electromagnetic field is unevenly distributed, the plasma will be unevenly distributed in the reaction chamber. This uneven plasma distribution will directly affect the deposition rate and film thickness uniformity of the film. However, the magnetic field of the existing electromagnetic structure used to adjust the uniformity of the plasma is generally fixed and cannot be flexibly adjusted according to the actual magnetic field distribution. In order to solve the above problems, this embodiment discloses an adjustable electromagnetic field mechanism 100.

[0033] See also Figures 1 to 6 This embodiment discloses an adjustable electromagnetic field mechanism 100, which includes: an electromagnetic coil 2 and a plurality of electromagnetic shielding components 3, wherein the plurality of electromagnetic shielding components 3 are rotationally symmetrically arranged about the center of the plane where the electromagnetic coil 2 is located, the electromagnetic shielding component 3 has a shielding surface, and the electromagnetic shielding component 3 can adjust the angle of the shielding surface relative to the electromagnetic coil 2, thereby adjusting the coupled output magnetic field of the electromagnetic coil 2.

[0034] During the startup process of the adjustable electromagnetic field mechanism 100 of this embodiment, the electromagnetic coil 2 is connected to the power input current, and according to the principle of electromagnetic induction, a magnetic field is generated axially in the electromagnetic coil 2. The magnetic field is used to control the distribution of plasma in the semiconductor process chamber. The uniformity of the plasma directly affects the uniformity of the thin film deposited on the surface of the silicon wafer or wafer, thereby affecting the quality of the thin film deposition.

[0035] The adjustable electromagnetic field mechanism 100 of this embodiment is configured by arranging a plurality of electromagnetic shielding components 3 directly above the coil of the electromagnetic coil 2. According to the electromagnetic shielding principle, the shielding surface will change the direction of the magnetic field lines of force, thereby flexibly adjusting the uniformity of the magnetic force of the coupled output magnetic field of the electromagnetic coil 2 according to the actual magnetic field conditions.

[0036] Please refer again Figure 3 The electromagnetic shielding assembly 3 includes a metal shielding plate 31, one end of which is grounded, and the plate surface of the metal shielding plate 31 is the shielding surface. The metal shielding plate 31 can rotate relative to the plane where the electromagnetic coil 2 is located to adjust the relative angle. The rotation of the metal shielding plate 31 described in this embodiment relative to the electromagnetic coil 2 means that the metal shielding plate 31 rotates with the line connecting the center point of the plane where the electromagnetic coil 2 is located and the metal shielding plate 31 as the center axis, thereby adjusting the shielding angle of the shielding surface.

[0037] The metal shielding plate 31 is arranged directly above the electromagnetic coil 2, and the forward projection of the metal shielding plate 31 at least partially overlaps with the electromagnetic coil 2. For example, when the electromagnetic coil 2 is arranged horizontally, the metal shielding plate 31 is arranged directly above the electromagnetic coil 2, that is, it is arranged approximately perpendicular to the magnetic field lines, so that the shielding effect on the magnetic field can be changed by rotating the angle.

[0038] Please refer again Figure 4 Taking the top view of the adjustable electromagnetic field mechanism 100 as an example, from a top view, at least the front end portion of each metal shielding plate 31 extends into the interior of the electromagnetic coil 2, so that it has the characteristic of changing the magnetic field.

[0039] Please refer again Figure 5 Specifically, the electromagnetic shielding assembly 3 further includes a driving member 33 and a rotating shaft 32 connected to the driving end of the driving member 33, and the metal shielding plate 31 is connected to the rotating shaft 32. In this embodiment, the driving member 33 is a servo motor, the rotating shaft of the servo motor is connected to the rotating shaft 32, and the metal shielding plate 31 is connected to the rotating shaft 32, so that the rotation angle of the metal shielding plate 31 is indirectly controlled by controlling the servo motor.

[0040] In order to assemble the electromagnetic coil 2 and the electromagnetic shielding assembly 3 into one, a plurality of the electromagnetic shielding assemblies 3 are connected to a support base 1. This embodiment simply illustrates that the support base 1 is a rectangular frame structure, and the servo motor is fixedly connected to the support base 1.

[0041] Further, in order to simplify the adjustment of the magnetic field, the electromagnetic coil 2 is a circular electromagnetic coil, and the electromagnetic shielding assembly 3 is provided with an even array. It can be understood that in other embodiments, the shape of the electromagnetic coil 2 can adopt other shape structures, such as elliptical, rectangular, etc., according to the shape of the process chamber and the required magnetic field area. The purpose is to achieve a relatively uniform plasma in the process chamber.

[0042] Among them, the electromagnetic shielding components 3 are arranged at equal central angles with the center of the circular electromagnetic coil as the center. For example, in this embodiment, 6 groups of electromagnetic shielding components 3 are provided, and the central angle between adjacent electromagnetic shielding components 3 is 60 degrees. In other embodiments, each electromagnetic shielding component 3 can be rotationally symmetrical about the axial center where the center of the circle is located, that is, after each electromagnetic shielding component 3 rotates a certain angle, all electromagnetic shielding components 3 can still be in an overlapping state.

[0043] In this embodiment, the relative distance between the metal shielding plate 31 and the electromagnetic coil 2 is not less than 20 mm, so as to prevent the metal shielding plate 31 from interfering with the electromagnetic coil 2 during the rotation process. Of course, in other embodiments, the distance between the metal shielding plate 31 and the electromagnetic coil 2 is determined according to the width of the metal shielding plate 31.

[0044] The number of groups of the electromagnetic shielding assembly 3 is preferably an even number between 6 and 20. When the metal shielding plate 31 is parallel to the plane where the electromagnetic coil 2 is located, the angle between the two is 0 degrees. When the metal shielding plate 31 is perpendicular to the plane where the electromagnetic coil 2 is located, the angle between the two is 90 degrees. In other adjustment processes, the rotation adjustment angle range between the metal shielding plate 31 and the electromagnetic coil 2 is 0-90 degrees. Then, as the angle between the two rotates from 0 to 90 degrees, the shielding effect of the metal shielding plate 31 on the electromagnetic coil 2 changes from strong to weak, corresponding to the electromagnetic field strength of the coil coupled into the process chamber at this point changes from weak to strong, and the plasma density at this point increases.

[0045] It should be noted that a plurality of groups of the electromagnetic shielding components 3 are distributed directly above the electromagnetic coil 2 at different rotation angles or at the same rotation angle, so as to flexibly adjust the magnetic field distribution.

[0046] The embodiment of the present invention further provides a HDPCVD device, which includes the adjustable electromagnetic field mechanism 100 as described in any one of the above.

[0047] The adjustable electromagnetic field mechanism and HDPCVD device of this embodiment arrange several groups of evenly distributed electromagnetic shielding components directly above the electromagnetic coil, use the electromagnetic shielding components to change the high-frequency magnetic field of the magnetic field, and adjust the magnetic field uniformity of the HDPCVD device by the rotation angle of the grounded metal shielding plate, thereby adjusting the uniformity of the plasma and ultimately improving the quality of thin film deposition.

[0048] The above examples are only used to further illustrate the technical content of the present invention, so that readers can understand it more easily, but they do not mean that the implementation of the present invention is limited to this. Any technical extension or re-creation made according to the present invention is protected by the present invention. The protection scope of the present invention shall be subject to the claims.

Claims

1. An adjustable electromagnetic field mechanism, characterized in that: include: An electromagnetic coil and a plurality of electromagnetic shielding components, wherein the plurality of electromagnetic shielding components are rotationally symmetrically arranged about the center of the plane where the electromagnetic coil is located, the electromagnetic shielding component has a shielding surface, and the electromagnetic shielding component can adjust the angle of the shielding surface relative to the electromagnetic coil, thereby adjusting the coupled output magnetic field of the electromagnetic coil.

2. The adjustable electromagnetic field mechanism according to claim 1, characterized in that: The electromagnetic shielding assembly comprises a metal shielding plate, one end of which is grounded, and the metal shielding plate can be rotated relative to the plane where the electromagnetic coil is located to adjust the relative angle.

3. The adjustable electromagnetic field mechanism according to claim 2, characterized in that: The metal shielding plate is arranged directly above the electromagnetic coil, and the forward projection of the metal shielding plate at least partially overlaps with the electromagnetic coil.

4. The adjustable electromagnetic field mechanism according to claim 2, characterized in that: The electromagnetic shielding assembly also includes a driving member and a rotating shaft connected to a driving end of the driving member, and the metal shielding plate is connected to the rotating shaft.

5. The adjustable electromagnetic field mechanism according to any one of claims 2 to 4, characterized in that: The electromagnetic coil is a circular electromagnetic coil, and the electromagnetic shielding component is provided with an even number of arrays.

6. The adjustable electromagnetic field mechanism according to claim 5, characterized in that: The plurality of electromagnetic shielding components are arranged at equal central angles with the center of the circular electromagnetic coil as the center.

7. The adjustable electromagnetic field mechanism according to claim 6, characterized in that: The relative distance between the metal shielding plate and the electromagnetic coil is not less than 20 mm.

8. The adjustable electromagnetic field mechanism according to claim 5, characterized in that: The number of groups of the electromagnetic shielding components is 6-20.

9. The adjustable electromagnetic field mechanism according to claim 5, characterized in that: A plurality of groups of the electromagnetic shielding components are respectively distributed above the electromagnetic coil at different rotation angles or at the same rotation angle.

10. A HDPCVD device, characterized in that: The HDPCVD device comprises an adjustable electromagnetic field mechanism as described in any one of claims 1 to 9.

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