Wafer adsorption device based on Bernoulli chuck

Abstract

The invention provides a wafer adsorption device based on a Bernoulli chuck. The wafer adsorption device comprises a Bernoulli chuck assembly, a lifting assembly, a chuck rotating assembly and an air pipe connector. The gas pipe connector, the chuck rotating assembly and the Bernoulli chuck assembly are sequentially connected in the flowing direction of dry and clean nitrogen. When a wafer is processed, the wafer is placed on the Bernoulli chuck assembly, dry and clean nitrogen is transmitted to the Bernoulli chuck assembly through the gas pipe interface, and the wafer is adsorbed through the Bernoulli chuck assembly; the chuck rotating assembly is used for conveying the dry and clean nitrogen to the Bernoulli chuck assembly and driving the Bernoulli chuck assembly to rotate along the center shaft; the lifting assembly is arranged between the Bernoulli chuck assembly and the chuck rotating assembly, and the lifting assembly abuts against the back face of the wafer and drives the wafer to move up and down relative to the Bernoulli chuck assembly. The wafer adsorption device can enable the wafer to be completely adsorbed on the surface of the chuck to rotate at a high speed, and the wafer can be prevented from being corroded by liquid medicine when the wafer is processed.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a wafer adsorption device based on a Bernoulli chuck. Background Art

[0002] In the semiconductor process, the wafer needs to be placed on the chuck for different processes such as degumming, cleaning, and etching. Depending on the process, there are different requirements for the contact method of the wafer on the chuck, and the common ones are edge pin contact type, clamping type, etc. With the continuous changes in wafer processing technology requirements, there are also different requirements for the front and back processes of the wafer.

[0003] However, there is currently a lack of an effective auxiliary device for processing wafers that can effectively adsorb the wafers while preventing the back of the wafers from being corroded by the chemical solution. Summary of the invention

[0004] In view of this, the embodiments of this specification provide a wafer adsorption device based on a Bernoulli chuck to achieve the purpose of effectively adsorbing the wafer to prevent the back side of the wafer from being corroded by the chemical solution when performing processes such as etching.

[0005] The embodiments of this specification provide the following technical solutions: A wafer adsorption device based on a Bernoulli chuck, comprising: Bernoulli chuck assembly, lifting assembly, chuck rotation assembly and air pipe interface; The air pipe interface, the chuck rotating assembly and the Bernoulli chuck assembly are connected in sequence along the flow direction of the dry and clean nitrogen; When processing a wafer, the wafer is placed on the Bernoulli chuck assembly, and dry clean nitrogen is transmitted to the Bernoulli chuck assembly through the air pipe interface, and the wafer is adsorbed by the Bernoulli chuck assembly; The chuck rotating assembly is used to transmit dry and clean nitrogen to the Bernoulli chuck assembly and drive the Bernoulli chuck assembly to rotate along the central axis; The lifting assembly is arranged between the Bernoulli chuck assembly and the chuck rotating assembly. When processing the wafer, the lifting assembly abuts against the back side of the wafer and drives the wafer to move up and down relative to the Bernoulli chuck assembly.

[0006] Further, the Bernoulli chuck assembly includes a Bernoulli chuck cover and a Bernoulli chuck base; The Bernoulli chuck cover is arranged on the Bernoulli chuck base, and the wafer is placed on the Bernoulli chuck cover; The outer wall of the Bernoulli chuck cover is provided with a Bernoulli chuck cover air flow hole, and an annular air passage is formed between the Bernoulli chuck cover and the Bernoulli chuck base; After being transmitted to the Bernoulli chuck cover, the dry and clean nitrogen gas flows into the annular gas channel through the gas channel on the Bernoulli chuck cover and the gas flow holes of the Bernoulli chuck cover, and flows out from the outer periphery of the Bernoulli chuck assembly along the annular gas channel.

[0007] Further, the annular air passage comprises a first cavity, a second cavity and a third cavity which are interconnected, and the second cavity is connected to the air flow hole of the Bernoulli chuck cover; The first cavity is arranged at the center of the Bernoulli chuck cover and is formed by the center depression of the Bernoulli chuck cover and the top surface of the Bernoulli chuck base; The second cavity is arranged in the direction from the center to the radius of the Bernoulli chuck cover, and is formed by the circumferential depression of the Bernoulli chuck cover and the top surface of the Bernoulli chuck base; The third cavity is arranged on the outer side of the Bernoulli chuck cover and is surrounded by the outer side wall of the Bernoulli chuck cover and the inner side wall of the Bernoulli chuck base.

[0008] Furthermore, the lifting assembly comprises: Pin column, Pin column base plate, lifting telescopic sleeve, cylinder, linear bearing and lifting guide shaft; One end of the Pin column passes through the columnar through hole of the Bernoulli chuck base and abuts against the back of the wafer, and the other end of the Pin column is fixed to the Pin column bottom plate; One end of the cylinder is fixed to the chuck rotating assembly, and the other end of the cylinder is fixed to the Pin column bottom plate; One end of the linear bearing is fixed to the chuck rotating assembly, and the other end of the linear bearing is fixed to the Pin column bottom plate; The lifting guide shaft is arranged in a linear bearing, and the lifting guide shaft drives the Pin column bottom plate to move up and down; The lifting and telescopic sleeve is arranged on the outer surface of the cylinder.

[0009] Furthermore, a telescopic section is provided at one end of the lifting and telescoping device, and the telescopic section is a telescopic bellows.

[0010] Further, the chuck rotating assembly comprises: Fixed pressure ring, hollow shaft rotary motor and bottom seal assembly; One end of the fixed pressure ring is connected to the lifting assembly, and the other end of the fixed pressure ring is connected to the hollow shaft rotating motor; The bottom sealing assembly is fixed to the rear cover of the hollow shaft rotary motor, and the hollow shaft rotary motor is connected to the air pipe interface through the bottom sealing assembly.

[0011] Furthermore, the hollow shaft rotating motor includes a rotating hollow shaft, which is inserted into a Bernoulli chuck cover of the Bernoulli chuck assembly and drives the Bernoulli chuck cover to rotate.

[0012] Furthermore, the Bernoulli chuck base and the rotating hollow shaft are sealed by a first dynamic sealing ring.

[0013] Further, the bottom sealing assembly includes a second dynamic sealing ring and a motor cover plate; The motor cover is sleeved on the outer periphery of the air pipe interface, and the connection between the air pipe interface and the motor cover is sealed by a second dynamic sealing ring.

[0014] Compared with the prior art, the at least one technical solution adopted in the embodiments of this specification can achieve the following beneficial effects: The wafer adsorption device can make the wafer completely adsorbed on the surface of the chuck and rotate at high speed, which can prevent the back of the wafer from being corroded by the chemical solution when performing etching and other processes. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0016] Figure 1 is a schematic diagram of the overall structure of a wafer adsorption device according to an embodiment of the present invention; Figure 2 is a side view of a wafer adsorption device according to an embodiment of the present invention; Figure 3 is a schematic structural diagram of a Bernoulli chuck cover according to an embodiment of the present invention; Figure 4 is a side view of a Bernoulli chuck cover according to an embodiment of the present invention; Figure 5 is a top view of the back side of the Bernoulli chuck cover of an embodiment of the present invention; Figure 6 is a schematic structural diagram of a Bernoulli chuck base according to an embodiment of the present invention; Figure 7 is a cross-sectional view of a Bernoulli chuck assembly according to an embodiment of the present invention; Figure 8 is a structural diagram of a lifting assembly according to an embodiment of the present invention; Fig. 9 is a schematic structural diagram of a telescopic section of a lifting assembly according to an embodiment of the present invention; Fig.10 is a side view of a telescopic section of a lifting assembly according to an embodiment of the present invention; Fig.11 is a schematic structural diagram of a chuck rotating assembly according to an embodiment of the present invention; Fig.12is a schematic structural diagram of a bottom sealing assembly of a chuck rotating assembly according to an embodiment of the present invention; Fig.13 4 is a cross-sectional view of a bottom sealing assembly of a chuck rotating assembly according to an embodiment of the present invention.

[0017] Reference numerals in the figure: 1. Bernoulli chuck assembly; 101. Bernoulli chuck cover; 1011. Bernoulli chuck cover air flow hole; 1012. first cavity; 1013. second cavity; 1014. third cavity; 102. Bernoulli chuck base; 2. lifting assembly; 201. Pin column; 202. Pin column bottom plate; 203. lifting telescopic sleeve; 2031. telescopic section; 204. cylinder; 205. linear bearing; 3. chuck rotation assembly; 301. fixed pressure ring; 302. hollow shaft rotation motor; 303. bottom sealing assembly; 3031. second dynamic sealing ring; 3032. motor cover; 4. air pipe interface. DETAILED DESCRIPTION

[0018] The embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0019] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0020] The Bernoulli chuck is a chuck structure that uses positive dry and clean nitrogen to generate high-speed airflow through tiny airways, thereby generating negative pressure for adsorption. This structure ensures that the wafer is adsorbed while allowing the chemical liquid flowing to the back of the wafer during the process to be taken away by the positive dry and clean nitrogen, thereby ensuring that the back of the wafer is not corroded by the chemical liquid.

[0021] Compared with commonly used dry compressed air (CDA), dry clean nitrogen has the characteristics of high purity and lower possibility of damaging wafers.

[0022] like Figure 1 and Figure 2 As shown, a wafer adsorption device based on a Bernoulli chuck comprises: Bernoulli chuck assembly 1, lifting assembly 2, chuck rotating assembly 3 and air pipe interface 4.

[0023] The air pipe interface 4, the chuck rotating assembly 3 and the Bernoulli chuck assembly 1 are connected in sequence along the flow direction of the dry and clean nitrogen.

[0024] When processing a wafer, the wafer is placed on the Bernoulli chuck assembly 1, and dry clean nitrogen is transmitted to the chuck rotating assembly 3 through the air pipe interface 4. The chuck rotating assembly 3 is used to transmit the dry clean nitrogen to the Bernoulli chuck assembly 1 and drive the Bernoulli chuck assembly 1 to rotate along the central axis.

[0025] The lifting assembly 2 is disposed between the Bernoulli chuck assembly 1 and the chuck rotating assembly 3 . When processing the wafer, the lifting assembly 2 abuts against the back side of the wafer and drives the wafer to move up and down relative to the Bernoulli chuck assembly 1 .

[0026] like Figures 3 to 6 As shown, the Bernoulli chuck assembly 1 includes a Bernoulli chuck cover 101 and a Bernoulli chuck base 102 .

[0027] The Bernoulli chuck cover 101 is disposed on the Bernoulli chuck base 102, and the wafer is placed on the Bernoulli chuck cover 101. Figure 4 As shown, a Bernoulli chuck cover air flow hole 1011 is provided on the outer wall of the Bernoulli chuck cover 101 , and an annular air passage is formed between the Bernoulli chuck cover 101 and the Bernoulli chuck base 102 , that is, a circle of labyrinth air passage exists between the Bernoulli chuck cover 101 and the Bernoulli chuck base 102 .

[0028] After the dry clean nitrogen is transmitted to the Bernoulli chuck cover 101, it passes through the air passage (such as Figure 5 As shown, the air flows into the annular air channel through a plurality of radial air channels extending from the center of the circle to the outer circumference and the Bernoulli chuck cover air flow hole 1011, and flows out from the outer circumference of the Bernoulli chuck assembly 1 along the annular air channel ( Figure 6 direction of airflow).

[0029] The dry clean nitrogen gas provides airflow to the surface of the Bernoulli chuck base 102 through the air passage, and the Bernoulli principle is used to adsorb the wafer on the surface of the Bernoulli chuck cover 101. Specifically, the dry clean nitrogen gas at the bottom passes upward through the Bernoulli chuck base 102 to the Bernoulli chuck cover 101, and then diffuses to the periphery of the Bernoulli chuck assembly 1 through the air passage, and then provides airflow to the outside through the Bernoulli chuck cover airflow holes 1011 around the Bernoulli chuck cover 101.

[0030] like Figure 6 As shown, the Bernoulli chuck base 102 is connected to the Bernoulli chuck cover 101. After the airflow passes through the Bernoulli chuck cover airflow hole 1011 to the outside, it provides a positive airflow pressure outward along the base slope of the Bernoulli chuck base 102. Through the application of the Bernoulli principle in fluid dynamics, when the fluid flow rate increases, it is often accompanied by a decrease in pressure. When the wafer is placed on the Bernoulli chuck cover 101 of the Bernoulli chuck assembly 1, the airflow can still adsorb the wafer while providing outward airflow to complete the process.

[0031] like Figure 7As shown, the annular air passage includes a first cavity 1012, a second cavity 1013 and a third cavity 1014 which are interconnected. The first cavity 1012 is arranged at the center of the Bernoulli chuck cover 101, and is formed by the center depression of the Bernoulli chuck cover 101 and the top surface of the Bernoulli chuck base 102. A plurality of second cavities 1013 are arranged along the center to radial direction of the Bernoulli chuck cover 101, and are formed by the circumferential depression of the Bernoulli chuck cover 101 and the top surface of the Bernoulli chuck base 102. The third cavity 1014 is arranged on the outside of the Bernoulli chuck cover 101, and is formed by the outer side wall of the Bernoulli chuck cover 101 and the inner side wall of the Bernoulli chuck base 102.

[0032] The dry and clean nitrogen gas that enters the Bernoulli chuck assembly 1 at high speed along the axial direction first enters the first cavity 1012, and the high-speed impact force of the dry and clean nitrogen gas entering the first cavity 1012 is eliminated. After the impact force is eliminated, the dry and clean nitrogen gas flows along the square airway ( Figure 5 The Bernoulli chuck cover air flow hole 1011 is set on the top surface of the second cavity 1013, and part of the dry and clean nitrogen is blown toward the back side of the wafer at a high speed through the air channel of the Bernoulli chuck cover air flow hole 1011, and most of the remaining dry and clean nitrogen enters the third cavity 1014 along the Bernoulli chuck cover air flow hole 1011.

[0033] Preferably, the Bernoulli chuck cover air flow holes 1011 are 6 circular holes with a diameter of 0.5 mm and an inclination angle of 30°, and are arranged at equal intervals along the outer circumference of the Bernoulli chuck cover 101 .

[0034] The outer inclined surface of the Bernoulli chuck cover 101 cooperates with the inner inclined surface of the Bernoulli chuck base 102 to form a ring-shaped airway with a certain inclination angle at the edge of the upper surface of the third cavity 1014. All the remaining dry and clean nitrogen is blown toward the back of the wafer at high speed along the inclined gap.

[0035] Preferably, the annular airway is a gap with a width of 0.2 mm and an inclination angle of 30°.

[0036] According to the Bernoulli principle, the high-speed airflow on the back side of the wafer makes the pressure on the back side of the wafer smaller than that on the front side of the wafer, so the wafer is adsorbed on the surface of the Bernoulli chuck assembly 1 .

[0037] After the Bernoulli chuck cover 101 and the Bernoulli chuck base 102 are installed together, the surface of the Bernoulli chuck cover 101 is higher than the surface of the Bernoulli chuck base 102, and the central area of ​​the back of the wafer contacts the surface of the Bernoulli chuck cover 101. When the chuck rotating assembly 3 rotates, the torque required for rotation is provided to the wafer.

[0038] Preferably, the height of the surface of the Bernoulli chuck cover 101 above the surface of the Bernoulli chuck base 102 is 0.45 mm to 0.55 mm.

[0039] When the existing method of setting baffles at the edge of the wafer for clamping is used, when the wafer is sprayed with liquid medicine, liquid easily accumulates in the contact area between the baffles and the wafer, causing the liquid medicine to contact the back of the wafer along the baffles, resulting in corrosion of the edge of the back of the wafer and wafer defects. The Bernoulli chuck assembly 1 of the embodiment of the present invention adopts a wafer center area contact method, which can make the high-speed dry and clean nitrogen gas flow pass through the edge of the wafer without any obstruction. When the liquid medicine flows from the front of the wafer to the back, the high-speed dry and clean nitrogen gas flow can completely blow away the liquid medicine, so that the back of the wafer does not contact any corrosive liquid medicine, and thus can more reliably protect the back of the wafer from corrosion. Figure 8 As shown, the lifting assembly 2 includes a pin column 201, a pin column base plate 202, a lifting telescopic sleeve 203, a cylinder 204, a linear bearing 205 and a lifting guide shaft. The lifting guide shaft is arranged in the linear bearing 205, and the lifting guide shaft drives the pin column base plate 202 to move up and down.

[0040] One end of the Pin column 201 passes through the columnar through hole of the Bernoulli chuck base 102 and abuts against the back of the wafer, and the other end of the Pin column 201 is fixed to the Pin column base plate 202. One end of the cylinder 204 is fixed to the chuck rotating assembly 3, and the other end of the cylinder 204 is fixed to the Pin column base plate 202. One end of the linear bearing 205 is fixed to the chuck rotating assembly 3, and the other end of the linear bearing 205 is fixed to the Pin column base plate 202. The lifting telescopic sleeve 203 is sleeved on the outer surface of the cylinder 204.

[0041] Pin column 201 is a mechanical structure used to support wafers during semiconductor manufacturing.

[0042] The pin column 201 in the lifting assembly 2 passes through the columnar through hole of the Bernoulli chuck base 102 and can abut against the back of the wafer. The rise or fall of the pin column 201 drives the wafer to rise or fall relative to the surface of the Bernoulli chuck assembly 1. When the wafer processing is completed, the lifting assembly 2 drives the pin column 201 to rise relative to the Bernoulli chuck assembly 1 and lift the wafer to facilitate wafer transmission.

[0043] like Fig. 9 and Fig.10 As shown, a telescopic section 2031 is provided at one end of the lifting telescopic sleeve 203. The telescopic section 2031 is a telescopic bellows structure. The action of the cylinder drives the lifting telescopic sleeve 203 to complete the lifting action. While ensuring the movement process, the cylinder 204 and other components are not corroded by the liquid medicine.

[0044] like Fig.11As shown, the chuck rotating assembly 3 includes a fixed pressure ring 301 , a hollow shaft rotating motor 302 and a bottom sealing assembly 303 .

[0045] One end of the fixed pressure ring 301 is fixedly connected to the lifting assembly 2, and the other end of the fixed pressure ring 301 is connected to the hollow shaft rotating motor 302. The bottom sealing assembly 303 is fixed to the rear cover of the hollow shaft rotating motor 302, and the hollow shaft rotating motor 302 is connected to the trachea interface 4 through the bottom sealing assembly 303.

[0046] The hollow shaft rotating motor 302 includes a rotating hollow shaft, which is inserted into the Bernoulli chuck cover 101 of the Bernoulli chuck assembly 1 and drives the Bernoulli chuck cover 101 to rotate.

[0047] like Fig.12 and Fig.13 As shown, the bottom sealing assembly 303 includes a second dynamic sealing ring 3031 and a motor cover plate 3032. The motor cover plate 3032 is sleeved on the outer periphery of the trachea interface 4, and the connection between the trachea interface 4 and the motor cover plate 3032 is sealed by the second dynamic sealing ring 3031. The bottom sealing assembly 303 is used to ensure the sealing performance of the chuck rotating assembly 3.

[0048] The Bernoulli chuck base 102 and the rotating hollow shaft are sealed by a first dynamic seal ring. Two first dynamic seal rings are used at the connection between the Bernoulli chuck base 102 and the chuck rotating assembly 3 to ensure the airtightness of the assembly.

[0049] When in use, the Pin column 201 is installed on the Pin column base plate 202, and the cylinder 204 is installed in the lifting telescopic sleeve 203. By working together with the linear bearing 205 and the lifting guide shaft, the Pin column 201 passes through the Bernoulli chuck assembly 1 to lift or put down the wafer, thereby completing the corresponding process. Dry and clean nitrogen provides airflow to the surface of the Bernoulli chuck assembly 1 through the airway, and the Bernoulli principle is used to adsorb the wafer on the chuck surface. At the same time, the positive airflow takes away the chemical solution on the back of the wafer, ensuring that the process is operating normally while ensuring that the back of the wafer is not corroded by the chemical solution.

[0050] Beneficial effects of the embodiments of the present invention: The wafer adsorption device of the embodiment of the present invention works together with the linear bearing and the lifting guide shaft to make the Pin column pass through the Bernoulli chuck assembly to lift or put down the wafer, so as to facilitate the subsequent process after the robot takes the wafer; the wafer adsorption device of the embodiment of the present invention can make the wafer completely adsorbed on the chuck surface for high-speed rotation, and can prevent the back of the wafer from being corroded by the chemical solution when performing processes such as etching; the telescopic part of the lifting telescopic sleeve of the lifting assembly is a bellows structure, and the movement of the cylinder drives the telescopic sleeve to complete the lifting movement, while ensuring the movement process, the cylinder and other components are not corroded by the chemical solution.

[0051] The above is only a specific embodiment of the present invention, and cannot be used to limit the scope of the invention. Therefore, the replacement of equivalent components, or equivalent changes and modifications made according to the scope of protection of the patent of the present invention, should still fall within the scope of this patent. In addition, the technical features of the present invention can be freely combined with each other, with each other, and with each other.

Claims

1. A wafer adsorption device based on a Bernoulli chuck, characterized in that: include: Bernoulli chuck assembly (1), lifting assembly (2), chuck rotating assembly (3) and air pipe interface (4); The air pipe interface (4), the chuck rotating assembly (3) and the Bernoulli chuck assembly (1) are connected in sequence along the flow direction of the dry clean nitrogen; When processing a wafer, the wafer is placed on a Bernoulli chuck assembly (1), the dry clean nitrogen gas is transmitted to the Bernoulli chuck assembly (1) through an air pipe interface (4), and the wafer is adsorbed by the Bernoulli chuck assembly (1); The chuck rotating assembly (3) is used to transmit the dry clean nitrogen to the Bernoulli chuck assembly (1) and drive the Bernoulli chuck assembly (1) to rotate along the central axis; The lifting assembly (2) is arranged between the Bernoulli chuck assembly (1) and the chuck rotating assembly (3); when the wafer is processed, the lifting assembly (2) abuts against the back side of the wafer and drives the wafer to move up and down relative to the Bernoulli chuck assembly (1).

2. The wafer adsorption device based on Bernoulli chuck according to claim 1, characterized in that: The Bernoulli chuck assembly (1) comprises a Bernoulli chuck cover (101) and a Bernoulli chuck base (102); The Bernoulli chuck cover (101) is arranged on the Bernoulli chuck base (102), and the wafer is placed on the Bernoulli chuck cover (101); A Bernoulli chuck cover airflow hole (1011) is provided on the outer wall of the Bernoulli chuck cover (101), and an annular air passage is formed between the Bernoulli chuck cover (101) and the Bernoulli chuck base (102); After being transmitted to the Bernoulli chuck cover (101), the dry clean nitrogen gas flows into the annular air channel through the air channel in the Bernoulli chuck cover (101) and the Bernoulli chuck cover air flow holes (1011), and flows out from the periphery of the Bernoulli chuck assembly (1) along the annular air channel.

3. The wafer adsorption device based on Bernoulli chuck according to claim 2, characterized in that: The annular air channel comprises a first cavity (1012), a second cavity (1013) and a third cavity (1014) which are interconnected, and the second cavity (1013) is connected to the air flow hole (1011) of the Bernoulli chuck cover; The first cavity (1012) is arranged at the center of the Bernoulli chuck cover (101), and is formed by the center depression of the Bernoulli chuck cover (101) and the top surface of the Bernoulli chuck base (102); The second cavity (1013) is arranged in the direction from the center to the radius of the Bernoulli chuck cover (101), and is formed by the circumferential depression of the Bernoulli chuck cover (101) and the top surface of the Bernoulli chuck base (102); The third cavity (1014) is arranged on the outside of the Bernoulli chuck cover (101), and is formed by the outer side wall of the Bernoulli chuck cover (101) and the inner side wall of the Bernoulli chuck base (102).

4. The wafer adsorption device based on Bernoulli chuck according to claim 2, characterized in that: The lifting assembly (2) comprises: Pin column (201), Pin column base plate (202), lifting telescopic sleeve (203), cylinder (204), linear bearing (205) and lifting guide shaft; One end of the Pin column (201) passes through the columnar through hole of the Bernoulli chuck base (102) and abuts against the back side of the wafer, and the other end of the Pin column (201) is fixed to the Pin column base plate (202); One end of the cylinder (204) is fixed to the chuck rotating assembly (3), and the other end of the cylinder (204) is fixed to the Pin column bottom plate (202); One end of the linear bearing (205) is fixed to the chuck rotating assembly (3), and the other end of the linear bearing (205) is fixed to the Pin column base plate (202); The lifting guide shaft is arranged in a linear bearing (205), and the lifting guide shaft drives the Pin column base plate (202) to move up and down; The lifting and telescopic sleeve (203) is sleeved on the outer surface of the cylinder (204).

5. The wafer adsorption device based on Bernoulli chuck according to claim 4, characterized in that: A telescopic section (2031) is provided at one end of the lifting telescopic sleeve (203), and the telescopic section (2031) is a telescopic bellows.

6. The wafer adsorption device based on Bernoulli chuck according to claim 2, characterized in that: The chuck rotating assembly (3) comprises: A fixed pressure ring (301), a hollow shaft rotating motor (302) and a bottom sealing assembly (303); One end of the fixed pressure ring (301) is connected to the lifting assembly (2), and the other end of the fixed pressure ring (301) is connected to the hollow shaft rotating motor (302); The bottom sealing component (303) is fixed to the rear cover of the hollow shaft rotating motor (302), and the hollow shaft rotating motor (302) is connected to the air pipe interface (4) via the bottom sealing component (303).

7. The wafer adsorption device based on Bernoulli chuck according to claim 6, characterized in that: The hollow shaft rotating motor (302) comprises a rotating hollow shaft, which is inserted into a Bernoulli chuck cover (101) of a Bernoulli chuck assembly (1) and drives the Bernoulli chuck cover (101) to rotate.

8. The wafer adsorption device based on Bernoulli chuck according to claim 7, characterized in that: The Bernoulli chuck base (102) and the rotating hollow shaft are sealed via a first dynamic sealing ring.

9. The wafer adsorption device based on Bernoulli chuck according to claim 6, characterized in that: The bottom sealing assembly (303) comprises a second dynamic sealing ring (3031) and a motor cover plate (3032); The motor cover plate (3032) is sleeved on the outer periphery of the trachea interface (4), and the connection portion between the trachea interface (4) and the motor cover plate (3032) is sealed via a second dynamic sealing ring (3031).

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