Semiconductor laser

Abstract

The invention discloses a semiconductor laser. The semiconductor laser comprises a chip base, a first light-emitting component, a second light-emitting component, a first beam combining component, a focusing component and an insertion core, the first beam combining assembly is used for combining laser beams emitted by the first light emitting assembly and the second light emitting assembly, and the focusing assembly is used for focusing the laser beams combined by the first beam combining assembly and enabling the laser beams to enter the insertion core; wherein the first light-emitting assembly comprises a first light-emitting chip, a first collimating lens, a first slow axis collimating negative lens and a first slow axis collimating positive lens which are sequentially arranged in the second direction, and laser emitted by the first light-emitting chip is collimated in the fast axis direction and the slow axis direction through the first collimating lens; and then the light is collimated again in the slow axis direction through the first slow axis collimation negative lens and the first slow axis collimation positive lens and enters the first beam combining assembly. The light beam quality of the semiconductor laser can be improved.

Description

Technical Field

[0001] The present application relates to the field of laser technology, and in particular to a semiconductor laser. Background Art

[0002] Semiconductor lasers have the advantages of small size, high efficiency, and long life. They are the main pump sources for fiber lasers and solid-state lasers, and are also the main components of direct semiconductor lasers. At present, semiconductor lasers are widely used in laser detection, laser medical treatment, laser display 3D printing and other fields. With the continuous upgrading of market demand, there are higher requirements for the stability, convenience, controllability and beam quality of semiconductor lasers. In the case of higher power requirements, in order to maintain high beam quality, laser beam combining must be performed. Laser beam combining is one of the effective technical approaches to achieve high-power, high-beam-quality semiconductor lasers. It combines multiple unit beams into a laser beam through geometric or physical optical means. However, the beam quality of semiconductor lasers in the prior art is poor. Summary of the invention

[0003] The embodiments of the present application provide a semiconductor laser, which can improve the beam quality of the semiconductor laser.

[0004] In a first aspect, the semiconductor laser provided by the present application includes a chip base, a first light-emitting component, a second light-emitting component, a first beam combining component, a focusing component, and a core insert;

[0005] The first light-emitting assembly and the second light-emitting assembly are arranged in sequence along a first direction, and the first light-emitting assembly and the second light-emitting assembly are both used to emit laser light along a second direction, and the first direction is perpendicular to the second direction, and the first beam combining assembly is used to combine the laser light emitted by the first light-emitting assembly and the laser light emitted by the second light-emitting assembly, and the focusing assembly is used to focus the laser light combined by the first beam combining assembly and enter the ferrule;

[0006] Among them, the first light-emitting component includes a first light-emitting chip, a first collimating lens, a first slow-axis collimating negative lens and a first slow-axis collimating positive lens arranged in sequence in the second direction. The laser emitted by the first light-emitting chip is collimated in the fast axis and slow axis directions by the first collimating lens, and then collimated again in the slow axis direction by the first slow-axis collimating negative lens and the first slow-axis collimating positive lens to enter the first beam combining component.

[0007] Optionally, the second light-emitting component includes a second light-emitting chip, a second collimating lens, a second slow-axis collimating negative lens and a second slow-axis collimating positive lens arranged in sequence in the second direction, and the laser emitted by the second light-emitting chip is collimated in the fast axis and slow axis directions by the second collimating lens, and then collimated again in the slow axis direction by the second slow-axis collimating negative lens and the second slow-axis collimating positive lens to enter the first beam combining component; the first light-emitting component and the second light-emitting component are arranged on the chip base, and the lasers emitted by the first light-emitting component and the second light-emitting component are at different heights from the chip base.

[0008] Optionally, the first beam combining component includes a second dichroic mirror and a first dichroic mirror arranged in sequence in the first direction, the second dichroic mirror is used to reflect the laser emitted by the second light-emitting component to the first dichroic mirror, and the first dichroic mirror transmits the laser reflected by the second dichroic mirror and reflects the laser emitted by the first light-emitting component to perform beam combining.

[0009] Optionally, the focusing assembly includes a focusing lens and an anti-reflection window arranged in sequence in the first direction, the focusing lens is used to focus the laser beam combined by the first beam combining assembly to the anti-reflection window, and the anti-reflection window transmits the laser beam combined by the first beam combining assembly and blocks the laser beam from being reflected back into the focusing lens.

[0010] Optionally, the semiconductor laser includes a third light-emitting component, a fourth light-emitting component and a second beam-combining component, the third light-emitting component and the fourth light-emitting component are used to emit lasers of different wavelengths, the first light-emitting component, the second light-emitting component, the third light-emitting component and the fourth light-emitting component are arranged in sequence along a first direction, the first beam-combining component and the second beam-combining component are arranged in sequence along the first direction, and the second beam-combining component is used to combine the laser beams emitted by the third light-emitting component and the fourth light-emitting component and then inject them into the first beam-combining component for secondary beam combining.

[0011] Optionally, the semiconductor laser includes a circuit board, which is arranged on one side of the chip base, and is provided with an integrated aviation plug interface and multiple diodes on the circuit board, and multiple diodes are connected to the integrated aviation plug interface, and the diodes are used to control the circuit board, and multiple thermistors are provided on the chip base, and the thermistors are used to detect the temperature of the semiconductor laser.

[0012] Optionally, the semiconductor laser includes a bracket and a locking nut, the bracket is located between the focusing assembly and the locking nut, the locking nut is threadedly connected to the bracket, the locking nut is slidably connected to the ferrule, the ferrule can be slid relative to the locking nut to be inserted into the bracket or pulled out of the bracket, the bracket and the ferrule are threadedly connected, a transmitter and a receiver are provided on one side of the bracket close to the focusing assembly, the transmitter and the receiver are electrically connected to the circuit board, the transmitter is used to send a signal to the receiver, when the ferrule is inserted into the bracket and extends into the transmitter and the receiver, the signal sent by the transmitter to the receiver is blocked, the circuit board receives the blocking signal and determines that the ferrule is inserted into place.

[0013] Optionally, a varistor, a washer and an assembly part are provided in sequence between the bracket and the locking nut, and the varistor is electrically connected to the circuit board. When the locking nut is rotated close to the bracket, the varistor is squeezed by the assembly part and the washer, and the varistor sends the measured pressure value to the circuit board.

[0014] Optionally, the first light-emitting chip is packaged in a TO package.

[0015] Optionally, a first heat dissipation ring is provided on the light emitting side of the first light emitting chip.

[0016] In the present application, compared with the related art, the semiconductor laser includes a chip base, a first light-emitting component, a second light-emitting component, a first beam-combining component, a focusing component and a core; the first light-emitting component and the second light-emitting component are arranged in sequence along the first direction, the first light-emitting component and the second light-emitting component are both used to emit laser light along the second direction, the first direction is perpendicular to the second direction, the first beam-combining component is used to combine the laser light emitted by the first light-emitting component and the second light-emitting component, and the focusing component is used to focus the laser light after the first beam-combining component is combined and enters the core; wherein the first light-emitting component includes a first light-emitting chip, a first collimating lens, a first slow-axis collimating negative lens and a first slow-axis collimating positive lens arranged in sequence in the second direction, the laser light emitted by the first light-emitting chip is collimated in the fast axis and slow axis directions by the first collimating lens, and then collimated again in the slow axis direction by the first slow-axis collimating negative lens and the first slow-axis collimating positive lens to enter the first beam-combining component. The present application can improve the beam quality of the semiconductor laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0018] Figure 1 is a schematic diagram of the overall structure of an embodiment of a semiconductor laser provided in an embodiment of the present application;

[0019] Figure 2 is a schematic diagram of the side structure of an embodiment of a semiconductor laser provided in an embodiment of the present application;

[0020] Figure 3 It is a schematic diagram of a first exploded structure of an embodiment of a semiconductor laser provided in an embodiment of the present application;

[0021] Figure 4 It is a second exploded structural schematic diagram of an embodiment of a semiconductor laser provided in an embodiment of the present application;

[0022] Figure 5 It is a schematic structural diagram of a first light-emitting component and a second light-emitting component in an embodiment of a semiconductor laser provided in an embodiment of the present application. DETAILED DESCRIPTION

[0023] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0024] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0025] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0026] See also Figure 1-Figure 5 The semiconductor laser provided in the present application includes a chip base 119 , a first light-emitting component 11 , a second light-emitting component 12 , a first beam combining component 15 , a focusing component 16 and a ferrule 191 .

[0027] In the embodiment of the present application, the first light-emitting component 11 and the second light-emitting component 12 are arranged in sequence along the first direction F1. The first light-emitting component 11 and the second light-emitting component 12 are both used to emit lasers along the second direction F2. The first direction F1 is perpendicular to the second direction F2. The first beam-combining component 15 is used to combine the lasers emitted by the first light-emitting component 11 and the second light-emitting component 12. The focusing component 16 is used to focus the lasers combined by the first beam-combining component 15 and enter the core 191.

[0028] Among them, the first light-emitting component 11 includes a first light-emitting chip 111, a first collimating lens 113, a first slow-axis collimating negative lens 114 and a first slow-axis collimating positive lens 115 which are arranged in sequence in the second direction F2. The laser emitted by the first light-emitting chip 111 is collimated in the fast axis and slow axis directions by the first collimating lens 113, and then collimated again in the slow axis direction by the first slow-axis collimating negative lens 114 and the first slow-axis collimating positive lens 115 to enter the first beam combining component 15.

[0029] Due to the waveguide structure of semiconductor lasers, the laser emitted by the chip is usually elliptical, with a relatively large divergence angle in the vertical direction and good beam quality, which is called the "fast axis". The divergence angle in the horizontal direction is relatively small, and the beam quality is poor, which is called the "slow axis". In order to obtain a good coupling effect, the beams in two directions need to be collimated separately, and the corresponding components are called fast axis collimators (FAC) and slow axis collimators (SAC). After collimation, the beams are combined and then coupled to the optical fiber.

[0030] The present application adopts a collimation scheme of a first collimating lens 113, a first slow axis collimating negative lens 114 and a first slow axis collimating positive lens 115 to shape the fast and slow axes of the output beam, and couples the beam into the ferrule 191 by focusing to complete the beam output, further optimizing the slow axis beam quality and improving the beam quality.

[0031] In the embodiment of the present application, the packaging method of the first light-emitting chip 111 is TO packaging, and a first heat dissipation ring 112 is provided on the light-emitting side of the first light-emitting chip 111. TO (Transistor Outline) is a transistor outline. Most early transistors used coaxial packaging, which was later borrowed into optical communication and called TO packaging, i.e. coaxial packaging. Furthermore, the light emitted by the first light-emitting chip 111 is blue. By adding a heat dissipation ring, its heat dissipation capacity is improved, and good power stability is ensured when the blue light TO works.

[0032] In the embodiment of the present application, the second light-emitting component 12 includes a second light-emitting chip 121, a second collimating lens 123, a second slow-axis collimating negative lens 124, and a second slow-axis collimating positive lens 125 arranged in sequence in the second direction F2. The laser emitted by the second light-emitting chip 121 is collimated in the fast axis and slow axis directions by the second collimating lens 123, and then collimated again in the slow axis direction by the second slow-axis collimating negative lens 124 and the second slow-axis collimating positive lens 125 to enter the first beam combining component 15. The first light-emitting component 11 and the second light-emitting component 12 are arranged on the chip base 119, and the lasers emitted by the first light-emitting component 11 and the second light-emitting component 12 are at different heights from the chip base 119. There is a height difference between the first light-emitting component 11 and the second light-emitting component 12 in assembly, and the first beam combining component 15 is used to spatially combine the light beams.

[0033] In the embodiment of the present application, the packaging method of the second light emitting chip 121 is TO packaging, and a second heat dissipation ring 122 is provided on the light emitting side of the second light emitting chip 121 .

[0034] In the embodiment of the present application, the first beam combining component 15 includes a second dichroic mirror 152 and a first dichroic mirror 151 which are sequentially arranged in the first direction F1, the second dichroic mirror 152 is used to reflect the laser light emitted by the second light emitting component 12 to the first dichroic mirror 151, the first dichroic mirror 151 transmits the laser light reflected by the second dichroic mirror 152 and reflects the laser light emitted by the first light emitting component 11, and performs beam combining. Specifically, the second dichroic mirror 152 is used to reflect the laser light emitted by the second light emitting component 12 along the second direction F2 to the first dichroic mirror 151 along the first direction F1, the first dichroic mirror 151 transmits the laser light along the first direction F1 reflected by the second dichroic mirror 152 to the first direction F1, and the first dichroic mirror 151 reflects the laser light emitted by the first light emitting component 11 along the second direction F2 to the first direction F1. The first dichroic mirror 151 combines the laser light along the first direction F1 transmitted by the first dichroic mirror 151 with the laser light along the first direction F1 reflected by the first dichroic mirror 151 .

[0035] In an embodiment of the present application, the focusing component 16 includes a focusing lens 162 and an anti-reflection window plate 161 which are arranged in sequence in the first direction F1. The focusing lens 162 is used to focus the laser beam combined by the first beam combining component 15 onto the anti-reflection window plate 161. The anti-reflection window plate 161 transmits the laser beam combined by the first beam combining component 15 and blocks the laser beam from being reflected back into the focusing lens 162.

[0036] In the embodiment of the present application, the semiconductor laser includes a third light-emitting component 13, a fourth light-emitting component 14 and a second beam-combining component 17. The third light-emitting component 13 and the fourth light-emitting component 14 are used to emit lasers of different wavelengths. The first light-emitting component 11, the second light-emitting component 12, the third light-emitting component 13 and the fourth light-emitting component 14 are arranged in sequence along the first direction F1. The first beam-combining component 15 and the second beam-combining component 17 are arranged in sequence along the first direction F1. The second beam-combining component 17 is used to combine the laser beams emitted by the third light-emitting component 13 and the fourth light-emitting component 14 and then inject them into the first beam-combining component 15 for secondary beam combining.

[0037] In the embodiment of the present application, the third light-emitting component 13 includes a third light-emitting chip 131, a first fast-axis collimator 132 and a first slow-axis collimator 133 which are sequentially arranged in the second direction F2, and the laser emitted by the third light-emitting chip 131 is collimated in the fast-axis direction by the first fast-axis collimator 132, and then collimated in the slow-axis direction by the first slow-axis collimator 133; the fourth light-emitting component 14 includes a fourth light-emitting chip 141, a second fast-axis collimator 142 and a second slow-axis collimator 143 which are sequentially arranged in the second direction F2, and the laser emitted by the fourth light-emitting chip 141 is collimated in the fast-axis direction by the second fast-axis collimator 142, and then collimated in the slow-axis direction by the second slow-axis collimator 143.

[0038] In the embodiment of the present application, the second beam combining component 17 includes a fourth dichroic mirror 172 and a third dichroic mirror 171 which are sequentially arranged in the first direction F1, the fourth dichroic mirror 172 is used to reflect the laser light emitted by the fourth light emitting component 14 to the third dichroic mirror 171, the third dichroic mirror 171 transmits the laser light reflected by the fourth dichroic mirror 172 and reflects the laser light emitted by the third light emitting component 13 to perform beam combining. Specifically, the fourth dichroic mirror 172 reflects the laser light emitted by the fourth light emitting component 14 along the second direction F2 to the third dichroic mirror 171 along the first direction F1, the third dichroic mirror 171 transmits the laser light along the first direction F1 reflected by the fourth dichroic mirror 172 to the first direction F1, and the third dichroic mirror 171 reflects the laser light emitted by the third light emitting component 13 along the second direction F2 to the first direction F1. The third dichroic mirror 171 combines the laser light along the first direction F1 transmitted by the third dichroic mirror 171 with the laser light along the first direction F1 reflected by the third dichroic mirror 171 .

[0039] Further, the semiconductor laser includes a fifth light-emitting component 144. The second beam combining component 17 includes a reflector 173, a fourth dichroic mirror 172, and a third dichroic mirror 171 which are sequentially arranged in the first direction F1. The reflector 173 reflects the laser light emitted by the fifth light-emitting component 144 to the fourth dichroic mirror 172, the fourth dichroic mirror 172 transmits the laser light reflected by the reflector 173, the fourth dichroic mirror 172 transmits the laser light reflected by the reflector 173, the fourth dichroic mirror 172 reflects the laser light emitted by the fourth light-emitting component 144 to the third dichroic mirror 171, and transmits the laser light reflected by the reflector 173 to the third dichroic mirror 171 for primary beam combining. The third dichroic mirror 171 transmits the light beam combined by the fourth dichroic mirror 172 and reflects the laser light emitted by the third light-emitting component 13 for secondary beam combining.

[0040] In the embodiment of the present application, the third light emitting chip 131 and the fourth light emitting chip 141 are packaged in a COS package. COS (Chip Cn Submount) packaging can adapt to different output powers.

[0041] Furthermore, the lights emitted by the third light-emitting component 13 , the fourth light-emitting component 14 , and the fifth light-emitting component 144 are red lights of different wavelengths.

[0042] In the embodiment of the present application, the third light-emitting component 13, the fourth light-emitting component 14, and the fifth light-emitting component 144 respectively emit red light of different wavelengths, which are packaged in the form of COS and sintered as a whole on a detachable module. Fast and slow axis collimation is performed by a fast axis collimator and a slow axis collimator. Similarly, the same wavelength COS is spatially combined using a reflector 173, and different wavelengths are combined using a fourth dichroic mirror 172 and a third dichroic mirror 171 for wavelength combination, and reflected, and finally coupled into the ferrule through focusing to achieve multi-wavelength beam output.

[0043] In the embodiment of the present application, the semiconductor laser includes a circuit board 181, which is arranged on one side of the chip base 119, and is provided with an integrated aviation plug interface 183 and a plurality of diodes 182 on the circuit board 181, and the plurality of diodes 182 are connected to the integrated aviation plug interface 183, and the diodes 182 are used to control the circuit board 181, and the chip base 119 is provided with a plurality of thermistors 184, and the thermistors 184 are used to detect the temperature of the semiconductor laser. The thermistors 184 are welded on the circuit board 181 and contact the tube shell, and the temperature change in the tube shell is monitored by the change in the resistance value of the circuit board 181.

[0044] In the embodiment of the present application, the semiconductor laser includes a bracket 196 and a locking nut 192. The bracket 196 is located between the focusing assembly 16 and the locking nut 192. The locking nut 192 and the bracket 196 are threadedly connected. The locking nut 192 is slidably connected to the ferrule 191. The ferrule 191 can be slid relative to the locking nut 192 to insert into the bracket 196 or pull out of the bracket 196. The bracket 196 and the ferrule 191 are threadedly connected. A transmitter 197 and a receiver 198 are provided on the side of the bracket 196 close to the focusing assembly 16. The transmitter 197 and the receiver 198 are electrically connected to the circuit board 181. The transmitter 197 is used to send a signal to the receiver 198. When the ferrule 191 is inserted into the bracket 196 and extends into the transmitter 197 and the receiver 198, the signal sent by the transmitter 197 to the receiver 198 is blocked. The circuit board 181 receives the blocking signal and determines that the ferrule 191 is inserted into the position.

[0045] Specifically, the transmitter 197 continuously emits light. When the ferrule 191 is inserted into place, the ferrule 191 blocks the light from irradiating to the receiver 198, and the receiver 198 cannot receive the signal. At this time, it is a qualified plug-in state. When the ferrule 191 is not in place, the receiver 198 can receive the signal. The circuit board 181 can be converted into a circuit-breaking signal, and the device cannot be powered on normally, avoiding the jumper from burning and ensuring its safety in use.

[0046] In the embodiment of the present application, a varistor 195, a washer 194 and an assembly part 193 are sequentially arranged between the bracket 196 and the locking nut 192. The varistor 195 is electrically connected to the circuit board 181. When the locking nut 192 rotates close to the bracket 196, the varistor 195 is squeezed by the assembly part 193 and the washer 194, and the varistor 195 sends the measured pressure value to the circuit board 181. The present application monitors the locking condition of the locking nut 192 during coupling through the varistor 195, and records the resistance value of the varistor; each time the nut is plugged in and out, it is screwed in the same resistance position to ensure the plugging and unplugging accuracy.

[0047] The semiconductor laser of the present application uses spatial beam combining and wavelength beam combining to achieve multi-wavelength output of the semiconductor laser.

[0048] The present application uses a chip diode 182 to monitor the output power of each reflector behind each path, which can monitor the working condition of the semiconductor laser and can also achieve precise adjustment of the output power of each band within a small range through the monitoring parameters of the diode 182.

[0049] This application adopts a modular approach to install COS, which is convenient for repair and maintenance.

[0050] This application uses a circuit board and an aviation plug structure to complete the integration of internal electronic components, realize a multi-functional pin design, and reduce complex wiring and pin welding.

[0051] The present application adopts a TO metal positioning ring to improve the heat dissipation performance of the TO, while compressing the space required for its assembly, further reducing the overall volume of the semiconductor laser.

[0052] The present application adopts monitoring means such as varistor 195, transmitter 197 and receiver 198 blocking to control the plug-in position and reduce plug-in loss.

[0053] In the embodiment of the present application, the material of the chip base 119 is aluminum diamond. Aluminum diamond is a composite material formed by using aluminum alloy as a matrix and diamond particles as a reinforcement. It has strong similarities with the performance of aluminum silicon carbide, but it has very obvious advantages in thermal conductivity, thermal expansion and other properties.

[0054] The semiconductor laser provided by the present application includes a chip base, a first light-emitting component, a second light-emitting component, a first beam-combining component, a focusing component and a core plug; the first light-emitting component and the second light-emitting component are arranged in sequence along the first direction, the first light-emitting component and the second light-emitting component are both used to emit laser light along the second direction, the first direction is perpendicular to the second direction, the first beam-combining component is used to combine the laser light emitted by the first light-emitting component and the second light-emitting component, and the focusing component is used to focus the laser light after the first beam-combining component is combined and enters the core plug; wherein the first light-emitting component includes a first light-emitting chip, a first collimating lens, a first slow-axis collimating negative lens and a first slow-axis collimating positive lens arranged in sequence in the second direction, the laser light emitted by the first light-emitting chip is collimated in the fast axis and slow axis directions by the first collimating lens, and then collimated again in the slow axis direction by the first slow-axis collimating negative lens and the first slow-axis collimating positive lens to enter the first beam-combining component. The present application can improve the beam quality of the semiconductor laser.

[0055] The semiconductor laser provided by the present application is introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. At the same time, for technicians in this field, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

[0056] It should be noted that when the above embodiments of the present application are applied to specific products or technologies, the relevant data of the user is involved, and the user's permission or consent is required, and the collection, use and processing of the relevant data must comply with relevant laws, regulations and standards.

Claims

1. A semiconductor laser, characterized in that: The semiconductor laser comprises a chip base, a first light-emitting component, a second light-emitting component, a first beam combining component, a focusing component and a core insert; The first light-emitting assembly and the second light-emitting assembly are arranged in sequence along a first direction, and the first light-emitting assembly and the second light-emitting assembly are both used to emit laser light along a second direction, and the first direction is perpendicular to the second direction, and the first beam combining assembly is used to combine the laser light emitted by the first light-emitting assembly and the laser light emitted by the second light-emitting assembly, and the focusing assembly is used to focus the laser light combined by the first beam combining assembly and enter the ferrule; Among them, the first light-emitting component includes a first light-emitting chip, a first collimating lens, a first slow-axis collimating negative lens and a first slow-axis collimating positive lens arranged in sequence in the second direction. The laser emitted by the first light-emitting chip is collimated in the fast axis and slow axis directions by the first collimating lens, and then collimated again in the slow axis direction by the first slow-axis collimating negative lens and the first slow-axis collimating positive lens to enter the first beam combining component.

2. The semiconductor laser according to claim 1, characterized in that The second light-emitting component includes a second light-emitting chip, a second collimating lens, a second slow-axis collimating negative lens and a second slow-axis collimating positive lens arranged in sequence in the second direction. The laser emitted by the second light-emitting chip is collimated in the fast axis and slow axis directions by the second collimating lens, and then collimated again in the slow axis direction by the second slow-axis collimating negative lens and the second slow-axis collimating positive lens to enter the first beam combining component; the first light-emitting component and the second light-emitting component are arranged on the chip base, and the lasers emitted by the first light-emitting component and the second light-emitting component are at different heights from the chip base.

3. The semiconductor laser according to claim 2, characterized in that The first beam combining component includes a second dichroic mirror and a first dichroic mirror arranged in sequence in the first direction, the second dichroic mirror is used to reflect the laser emitted by the second light-emitting component to the first dichroic mirror, the first dichroic mirror transmits the laser reflected by the second dichroic mirror and reflects the laser emitted by the first light-emitting component to perform beam combining.

4. The semiconductor laser according to claim 2, characterized in that The focusing assembly includes a focusing lens and an anti-reflection window sheet arranged in sequence in the first direction, the focusing lens is used to focus the laser beam combined by the first beam combining assembly to the anti-reflection window sheet, and the anti-reflection window sheet transmits the laser beam combined by the first beam combining assembly and blocks the laser beam from being reflected back into the focusing lens.

5. The semiconductor laser according to claim 2, characterized in that The semiconductor laser includes a third light-emitting component, a fourth light-emitting component and a second beam-combining component, the third light-emitting component and the fourth light-emitting component are used to emit lasers of different wavelengths, the first light-emitting component, the second light-emitting component, the third light-emitting component and the fourth light-emitting component are arranged in sequence along a first direction, the first beam-combining component and the second beam-combining component are arranged in sequence along the first direction, and the second beam-combining component is used to combine the laser beams emitted by the third light-emitting component and the fourth light-emitting component and then inject them into the first beam-combining component for secondary beam combining.

6. The semiconductor laser according to claim 2, characterized in that The semiconductor laser includes a circuit board, which is arranged on one side of the chip base. An integrated aviation plug interface and multiple diodes are provided on the circuit board. Multiple diodes are connected to the integrated aviation plug interface. The diodes are used to control the circuit board. Multiple thermistors are provided on the chip base. The thermistors are used to detect the temperature of the semiconductor laser.

7. The semiconductor laser according to claim 6, characterized in that The semiconductor laser includes a bracket and a locking nut. The bracket is located between the focusing assembly and the locking nut. The locking nut is threadedly connected to the bracket. The locking nut is slidably connected to the ferrule. The ferrule can be slid relative to the locking nut to be inserted into the bracket or pulled out of the bracket. The bracket and the ferrule are threadedly connected. A transmitter and a receiver are provided on one side of the bracket close to the focusing assembly. The transmitter and the receiver are electrically connected to the circuit board. The transmitter is used to send a signal to the receiver. When the ferrule is inserted into the bracket and extends into the transmitter and the receiver, the signal sent by the transmitter to the receiver is blocked. The circuit board receives the blocking signal and determines that the ferrule is inserted into place.

8. The semiconductor laser according to claim 7, characterized in that A varistor, a washer and an assembly part are arranged in sequence between the bracket and the locking nut. The varistor is electrically connected to the circuit board. When the locking nut is rotated close to the bracket, the varistor is squeezed by the assembly part and the washer, and the varistor sends the measured pressure value to the circuit board.

9. The semiconductor laser according to claim 1, characterized in that The first light-emitting chip is packaged in a TO package.

10. The semiconductor laser according to claim 9, characterized in that A first heat dissipation ring is provided on the light emitting side of the first light emitting chip.

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