Display device and method of manufacturing same

Abstract

The invention relates to a display device and a method of manufacturing the same. The display device includes: a light emitting element layer including at least one light emitting device configured to emit light; a light-transmitting film on the light-emitting element layer, the light-transmitting film having a first refractive index and defining an opening; a light blocking pattern on the light emitting element layer and in the opening; and a low refractive film on the light-transmitting film, the low refractive film having a second refractive index smaller than the first refractive index, and including a refractor inclined to have an inclination angle with respect to an imaginary line perpendicular to an upper surface of the light-transmitting film.

Description

Technical Field

[0001] Aspects of embodiments of the present disclosure relate to a display device and a method of manufacturing the display device. Background Art

[0002] A display device is a device including a display area that displays an image. Recently, there is an increasing demand for display devices in which the viewing angle of an image displayed in the display area is controlled.

[0003] For example, as display devices are frequently used in public places, it may be desirable to control the viewing angle of an image displayed in the display area so that people other than the user cannot see the image displayed in the display area. For another example, it may be desirable to control the viewing angle of an image displayed in the display area of ​​a vehicle display device.

[0004] The above information disclosed in this Background section is for enhancement of understanding of the background of the present disclosure and therefore it may contain information that does not constitute the prior art. Summary of the invention

[0005] One or more embodiments of the present disclosure may be directed to a display device with a controlled viewing angle.One or more embodiments of the present disclosure may be directed to a display device with improved light extraction efficiency.

[0006] One or more embodiments of the present disclosure may be directed to a method of manufacturing a display device.

[0007] According to one or more embodiments of the present disclosure, a display device includes: a light-emitting element layer, including: at least one light-emitting device configured to emit light; a light-transmitting film, on the light-emitting element layer, the light-transmitting film having a first refractive index and defining an opening; a light-blocking pattern, on the light-emitting element layer and in the opening; and a low-refractive film, on the light-transmitting film, the low-refractive film having a second refractive index less than the first refractive index and including a plurality of refractors, each of the plurality of refractors being tilted to have an inclination angle relative to an imaginary line, the imaginary line being perpendicular to an upper surface of the light-transmitting film.

[0008] In an embodiment, the first refractive index may be approximately 1.4 or greater, and the second refractive index may be approximately 1.3 or less.

[0009] In an embodiment, each of the plurality of refractors may include a material having a third refractive index greater than the second refractive index.

[0010] In an embodiment, each of the plurality of refractors may include an inorganic material.

[0011] In an embodiment, each of the plurality of refractors may include at least one of a metal compound and an inorganic insulating material.

[0012] In an embodiment, each of the refractors may include magnesium fluoride (MgF 2 ), titanium dioxide (TiO 2 ), at least one of silicon oxide, silicon nitride and silicon oxynitride.

[0013] In an embodiment, the low refraction film may overlap the light transparent film and may be spaced apart from the light blocking pattern in a plan view.

[0014] In an embodiment, the low-refractive film may not be positioned in the opening.

[0015] In an embodiment, the display device may further include a planarization layer on the light-transmitting film and the light-blocking pattern and covering the refractor.

[0016] In an embodiment, the low-refractive film may further include a cavity defined between the plurality of refractors, and the cavity of the low-refractive film may be filled with the planarization layer.

[0017] In an embodiment, the light blocking pattern may include at least one of a black pigment, a black dye, and molybdenum tantalum oxide (MTO).

[0018] According to one or more embodiments of the present disclosure, a method for manufacturing a display device includes: forming a light-emitting element layer on a substrate, the light-emitting element layer including at least one light-emitting element configured to emit light; forming a light-transmitting film on the light-emitting element layer, the light-transmitting film having a first refractive index and defining an opening; forming a low-refractive film on the light-transmitting film, the low-refractive film having a second refractive index less than the first refractive index and including a refractor, the refractor being inclined to have an inclination angle relative to an imaginary line, the imaginary line being perpendicular to an upper surface of the light-transmitting film; and forming a light-blocking pattern in the opening.

[0019] In an embodiment, the low-refractive film may not be formed in the opening.

[0020] In an embodiment, in the forming of the low refraction film, the low refraction film may be deposited on the light-transmitting film by arranging the substrate to be inclined relative to an imaginary line perpendicular to a surface from which a deposition material for depositing the low refraction film is emitted.

[0021] In an embodiment, in the forming of the low-refractive film, the low-refractive film may be deposited by additionally providing an auxiliary plate to control a traveling direction of the deposition material between a surface from which the deposition material is emitted and the substrate.

[0022] In an embodiment, the auxiliary plate may have a mesh shape.

[0023] In an embodiment, the deposited material may have a third refractive index greater than the second refractive index.

[0024] In an embodiment, the deposition material may include an inorganic material.

[0025] In an embodiment, the deposition material may include at least one of a metal compound and an inorganic insulating material.

[0026] In an embodiment, the method may further include forming a planarization layer on the light-transmitting film to cover the refractor.

[0027] In an embodiment, the method may further include: forming a sacrificial layer on the low refractive film; forming a virtual light blocking pattern on the sacrificial layer; and removing the virtual light blocking pattern by removing the sacrificial layer. The virtual light blocking pattern may be formed in the same process as the light blocking pattern.

[0028] In an embodiment, the sacrificial layer may not be formed in the opening.

[0029] In an embodiment, in the forming of the sacrificial layer, the sacrificial layer may be deposited on the low refractive film by arranging the substrate to be inclined with respect to an imaginary line perpendicular to a surface from which a deposition material for depositing the sacrificial layer is emitted.

[0030] In an embodiment, in the removing of the dummy light blocking pattern, the sacrificial layer may be removed by an etching process.

[0031] In an embodiment, the sacrificial layer may be formed to have a first etching rate with respect to the etching process, and the low-refractive film may be formed to have a second etching rate with respect to the etching process that is less than the first etching rate.

[0032] In an embodiment, the dummy light blocking pattern may be spaced apart from the light blocking pattern.

[0033] In an embodiment, after the dummy light blocking pattern is removed by removing the sacrificial layer, the low refraction film and the light blocking pattern may remain.

[0034] According to one or more embodiments of the present disclosure, a display device may include a light-transmitting film disposed on a light-emitting element layer and defining an opening, and a light-blocking pattern disposed in the opening. The light-blocking pattern may control a viewing angle of light emitted from the light-emitting element layer.

[0035] According to one or more embodiments of the present disclosure, a display device may include a low refraction film, which is disposed on the light-transmitting film and includes a refractor that is tilted to have an inclination angle (e.g., a predetermined inclination angle). Accordingly, the low refraction film may have a refractive index that is smaller than the refractive index of the light-transmitting film. Therefore, the low refraction film may control the path of light emitted from the light-emitting element layer and passing through the light-transmitting film. In addition, the low refraction film may improve the luminous efficiency of the display device. In addition, the light extraction efficiency of the display device may be improved.

[0036] According to one or more embodiments of the present disclosure, in a method of manufacturing a display device, a low refraction film may be formed by an oblique deposition method. Since the low refraction film is formed by the oblique deposition method, the low refraction film may be selectively formed on the upper surface of the light-transmitting film.

[0037] According to one or more embodiments of the present disclosure, since the low refractive film can be formed by an oblique deposition method, even when the low refractive film is formed using a material having a refractive index greater than that of the light-transmitting film, the low refractive film can have a refractive index lower than that of the light-transmitting film. Therefore, the diversity of materials that can be used as the low refractive film can be ensured. In addition, by adopting a material that can reduce or prevent damage during the manufacturing process of the display device, the low refractive film can be more easily implemented. Further, the display device can be more easily manufactured.

[0038] According to one or more embodiments of the present disclosure, in a method for manufacturing a display device, a sacrificial layer may be formed on a low-refractive film, a virtual light blocking pattern may be formed on the sacrificial layer, and the virtual light blocking pattern may be removed by removing the sacrificial layer. Therefore, even when the polishing process is omitted, the upper surface of each light blocking pattern may be formed at the same or substantially the same plane as the upper surface of the light-transmitting film (e.g., in or on the plane). In other words, even when the polishing process is omitted, the plane forming the upper surface of each light blocking pattern and the upper surface of the light-transmitting film may be flat or substantially flat. Therefore, even when the polishing process is omitted, the material used to form the light blocking pattern may not be retained or substantially not be retained on the upper surface of the light-transmitting film.

[0039] According to one or more embodiments of the present disclosure, the polishing process for forming the light blocking pattern can be omitted. Therefore, the upper surface of the light-transmitting film may not be damaged by the polishing process. In this way, the surface characteristics of the upper surface of the light-transmitting film can be improved. Further, the reliability of the display device can be improved, and the light extraction efficiency of the display device can be improved.

[0040] It is to be understood that both the foregoing general description and the following detailed description are exemplary embodiments and explanatory in nature and, therefore, are intended to provide further explanation of the invention as claimed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] The above and other aspects and features of the present disclosure will be more clearly understood from the following detailed description of illustrative, non-limiting embodiments with reference to the accompanying drawings.

[0042] Figure 1 is a plan view showing a display device according to an embodiment.

[0043] Figure 2 yes Figure 1 An enlarged view of a pixel area of ​​a display device.

[0044] Figure 3 It is along Figure 2 A cross-sectional view taken along line II'.

[0045] Figure 4 yes Figure 3 Magnified view of area A.

[0046] Figures 5 to 13 It is shown Figure 1 Various views of a method for manufacturing a display device. DETAILED DESCRIPTION

[0047] Hereinafter, the embodiments will be described in more detail with reference to the accompanying drawings, in which the same reference numerals refer to the same elements throughout the text. However, the present disclosure can be implemented in various different forms and should not be construed as being limited to the embodiments shown herein. Rather, these embodiments are provided as examples so that the present disclosure will be thorough and complete, and will fully convey the aspects and features of the present disclosure to those skilled in the art. Therefore, it is not necessary to describe processes, elements and techniques for a complete understanding of the aspects and features of the present disclosure for those of ordinary skill in the art. Unless otherwise stated, in the entire drawings and written descriptions, the same reference numerals represent the same elements, and therefore, their redundant descriptions will not be repeated.

[0048] When a certain embodiment can be implemented differently, the specific process order may be different from the described order. For example, two processes described in succession may be performed simultaneously or substantially simultaneously, or may be performed in an order opposite to the described order.

[0049] In the accompanying drawings, for the sake of clarity, the relative size, thickness and ratio of elements, layers and zones may be exaggerated and / or simplified. For ease of explanation, spatial relative terms (such as "under ... ", "under ... ", "under ... ", "above ... " and "on ", etc.) can be used here to describe the relationship between an element or feature and another element (multiple elements) or feature (multiple features) as shown in the accompanying drawings. It will be understood that, in addition to the orientations depicted in the accompanying drawings, spatial relative terms are also intended to cover different orientations of the device in use or operation. For example, if the device in the accompanying drawings is turned over, the element described as "under" or "under" or "below" other elements or features will then be oriented "above" other elements or features. Therefore, the example terms "under ... " and "under ... " can cover both above and below. The device can be oriented in other ways (for example, rotated 90 degrees or at other orientations), and therefore, the spatial relative descriptors used in this article should be interpreted accordingly.

[0050] In the figure, the first direction D1, the second direction D2, and the third direction D3 are not limited to the three axes of the rectangular coordinate system, and can be interpreted in a broader sense. For example, the first direction D1, the second direction D2, and the third direction D3 may be perpendicular to each other or substantially perpendicular to each other, or may represent different directions that are not perpendicular to each other.

[0051] It will be understood that, although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the spirit and scope of the present disclosure, the first element, component, region, layer or part described below may be referred to as a second element, component, region, layer or part.

[0052] It will be understood that when an element or layer is referred to as being "on," "connected to," or "coupled to" another element or layer, the element or layer may be directly on, directly connected to, or directly coupled to the other element or layer, or there may be one or more intervening elements or layers. Similarly, when a layer, region, or element is referred to as being "electrically connected" to another layer, region, or element, the layer, region, or element may be directly electrically connected to the other layer, region, or element, and / or the layer, region, or element may be indirectly electrically connected to the other layer, region, or element with one or more intervening layers, regions, or elements interposed therebetween. Furthermore, it will be understood that when an element or layer is referred to as being "between" two elements or layers, the element or layer may be the only element or layer between the two elements or layers, or there may also be one or more intervening elements or layers.

[0053] The terms used herein are to describe specific embodiments, and are not intended to limit the present disclosure. As used herein, unless the context clearly indicates otherwise, the singular forms "one" and "one (kind / person)" are also intended to include plural forms. It will also be understood that the terms "include", "comprise", "contain", "cover", "contain", "have" and "have" specify the existence of stated features, integers, steps, operations, elements and / or components when used in this specification, but do not exclude the existence or addition of one or more other features, integers, steps, operations, elements, components and / or their groups. As used herein, the term "and / or" includes any combination and all combinations of one or more related listed items. For example, the statement "A and / or B" means A, B, or A and B. When after a column of elements, statements such as "at least one of ..." modify the entire column of elements without modifying the individual elements in this column. For example, the expressions "at least one of a, b, and c" and "at least one selected from the group consisting of a, b, and c" mean only a, only b, only c, both a and b, both a and c, both b and c, all a, b, and c, or variations thereof.

[0054] As used herein, the terms "substantially," "approximately," and similar terms are used as terms of approximation rather than terms of degree, and are intended to account for the inherent deviations in measurements or calculations that one of ordinary skill in the art would recognize. Additionally, the use of "may" when describing embodiments of the present disclosure refers to "one or more embodiments of the present disclosure." As used herein, the terms "use," "using," and "used" may be considered synonymous with the terms "utilize," "apply," and "utilized," respectively.

[0055] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present disclosure belongs. It will also be understood that, unless explicitly defined as such herein, terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and / or this specification, and should not be interpreted in an idealized or overly formal sense.

[0056] Figure 1 is a plan view showing a display device according to an embodiment.

[0057] Reference Figure 1 , the display device DD according to the embodiment may be divided into a display area DA and a peripheral area PA. The display area DA may display an image, and the peripheral area PA may be positioned around the display area DA (e.g., adjacent to the display area DA). For example, the peripheral area PA may surround the display area DA (e.g., around the periphery of the display area DA).

[0058] In an embodiment, the display device DD may have a rectangular shape in a plan view. However, the present disclosure is not limited thereto, and the display device DD may have various suitable shapes in a plan view. As used herein, a plane may be defined by a first direction D1 and a second direction D2 that crosses or intersects the first direction D1. For example, the first direction D1 and the second direction D2 may be perpendicular or substantially perpendicular to each other. The third direction D3 may be perpendicular or substantially perpendicular to the plane. In other words, the third direction D3 may be a normal direction of the plane.

[0059] The display device DD may include a plurality of pixel areas PXA disposed in the display area DA. For example, the pixel areas PXA may be arranged in a matrix along the first direction D1 and the second direction D2. The display device DD hereinafter may refer to Figure 1 The display device DD is shown in FIG.

[0060] Figure 2 yes Figure 1 An enlarged view of a pixel area of ​​a display device.

[0061] Reference Figure 1 and Figure 2, each pixel region PXA may include a first sub-pixel region SPXA1, a second sub-pixel region SPXA2, and a third sub-pixel region SPXA3 and a non-emission region NEA surrounding the first sub-pixel region SPXA1, the second sub-pixel region SPXA2, and the third sub-pixel region SPXA3 (e.g., around the periphery of the first sub-pixel region SPXA1, the second sub-pixel region SPXA2, and the third sub-pixel region SPXA3). The first sub-pixel region SPXA1, the second sub-pixel region SPXA2, and the third sub-pixel region SPXA3 may emit light of different colors from each other. For example, the first sub-pixel region SPXA1 may emit red light, the second sub-pixel region SPXA2 may emit green light, and the third sub-pixel region SPXA3 may emit blue light. However, the present disclosure is not limited thereto, and the first sub-pixel region SPXA1, the second sub-pixel region SPXA2, and the third sub-pixel region SPXA3 may be combined with each other so that each pixel region PXA emits yellow, cyan, and / or magenta light.

[0062] In an embodiment, the arrangement structure of the first sub-pixel region SPXA1, the second sub-pixel region SPXA2, and the third sub-pixel region SPXA3 may be an S-shaped stripe structure. For example, the first sub-pixel region SPXA1 and the second sub-pixel region SPXA2 may be arranged in a first column, and the third sub-pixel region SPXA3 may be arranged in a second column adjacent to the first column. In this case, one side of each of the first sub-pixel region SPXA1 and the second sub-pixel region SPXA2 may be arranged to face the long side of the third sub-pixel region SPXA3. However, the present disclosure is not limited thereto, and the planar arrangement of the first sub-pixel region SPXA1, the second sub-pixel region SPXA2, and the third sub-pixel region SPXA3 may be variously modified as needed or desired.

[0063] exist Figure 2 , each pixel region PXA is shown as having a first sub-pixel region SPXA1, a second sub-pixel region SPXA2, and a third sub-pixel region SPXA3, but the present disclosure is not limited thereto. For example, in another embodiment, each pixel region PXA may have two sub-pixel regions, four sub-pixel regions, or more sub-pixel regions.

[0064] In an embodiment, the display device DD may include a light blocking pattern LP. The light blocking pattern LP may extend in the second direction D2. In an embodiment, the light blocking patterns LP may be arranged side by side with each other in a plan view. For example, the light blocking patterns LP may be spaced apart from each other in the first direction D1. In other words, the light blocking patterns LP may be parallel or substantially parallel to each other. However, the arrangement of the light blocking patterns LP is not limited thereto.

[0065] The light blocking pattern LP may control the viewing angle of light emitted from each of the first sub-pixel region SPXA1, the second sub-pixel region SPXA2, and the third sub-pixel region SPXA3. In an embodiment, the light blocking pattern LP may be arranged to overlap with the first sub-pixel region SPXA1, the second sub-pixel region SPXA2, and the third sub-pixel region SPXA3 in a plan view. However, the present disclosure is not limited thereto. For example, the light blocking pattern LP may be arranged to be spaced apart from the first sub-pixel region SPXA1, the second sub-pixel region SPXA2, and the third sub-pixel region SPXA3, and overlap with the non-emission area NEA in a plan view. In other words, in a plan view, the light blocking pattern LP may be disposed between the first sub-pixel region SPXA1, the second sub-pixel region SPXA2, and the third sub-pixel region SPXA3. As another example, the light blocking pattern LP may overlap with at least one sub-pixel region among the first sub-pixel region SPXA1, the second sub-pixel region SPXA2, and the third sub-pixel region SPXA3, and may be spaced apart from at least one sub-pixel region among the other remaining sub-pixel regions among the first sub-pixel region SPXA1, the second sub-pixel region SPXA2, and the third sub-pixel region SPXA3.

[0066] Figure 3 It is along Figure 2 A cross-sectional view taken along line II'.

[0067] For convenience, Figure 3 , a cross-sectional structure of the first sub-pixel region SPXA1 is shown. The cross-sectional structure of each of the second sub-pixel region SPXA2 and the third sub-pixel region SPXA3 may be the same or substantially the same as the cross-sectional structure of the first sub-pixel region SPXA1. Therefore, a redundant description of the cross-sectional structure of each of the second sub-pixel region SPXA2 and the third sub-pixel region SPXA3 may not be repeated.

[0068] Reference Figure 3 , the display device DD may include a substrate SUB, a circuit element layer CEL, a light emitting element layer LEL, an encapsulation layer ENC, a light transparent film LTF, a light blocking pattern LP, a low refractive film LRF, and a planarization layer PLN.

[0069] The substrate SUB may include a transparent or opaque material. In an embodiment, examples of materials that may be used as the substrate SUB may include glass, quartz, or plastic, etc. These materials may be used alone or in appropriate combination with each other.

[0070] The circuit element layer CEL may be disposed on the substrate SUB. The circuit element layer CEL may include a buffer layer BFR, a driving element TR, and first, second, and third insulating layers IL1, IL2, and IL3. The driving element TR may include an active pattern ACT, a gate electrode GAT, a first connection electrode CE1, and a second connection electrode CE2.

[0071] The buffer layer BFR may be disposed on the substrate SUB. The buffer layer BFR may prevent or substantially prevent impurities such as oxygen and / or moisture from diffusing to the upper portion of the substrate SUB. The buffer layer BFR may include an inorganic material. Examples of inorganic materials that may be used as the buffer layer BFR may include silicon oxide, silicon nitride, and silicon oxynitride. These materials may be used alone or in appropriate combination with each other. The buffer layer BFR may have a single-layer structure, or a multilayer structure including a plurality of insulating layers.

[0072] The active pattern ACT may be disposed on the buffer layer BFR. In an embodiment, the active pattern ACT may include a silicon semiconductor material or an oxide semiconductor material. Examples of silicon semiconductor materials that may be used as the active pattern ACT may include amorphous silicon or polycrystalline silicon, etc. Examples of oxide semiconductor materials that may be used as the active pattern ACT may include InGaZnO (IGZO) or InSnZnO (ITZO), etc.

[0073] In an embodiment, the first insulating layer IL1 may be disposed on the buffer layer BFR. The first insulating layer IL1 may cover the active pattern ACT. In another embodiment, the first insulating layer IL1 may be arranged on the active pattern ACT in a pattern form to expose a portion of the active pattern ACT. For example, the first insulating layer IL1 may be arranged on the active pattern ACT in a pattern form so as to overlap with the gate electrode GAT. The first insulating layer IL1 may include an inorganic insulating material. Examples of inorganic insulating materials that may be used as the first insulating layer IL1 may include silicon oxide, silicon nitride, and silicon oxynitride. These materials may be used alone or in appropriate combination with each other.

[0074] The gate electrode GAT may be disposed on the first insulating layer IL1. In an embodiment, the gate electrode GAT may include a metal, an alloy, a conductive metal oxide, a transparent conductive material, or the like.

[0075] The second insulating layer IL2 may be disposed on the first insulating layer IL1. In an embodiment, the second insulating layer IL2 may cover the gate electrode GAT. The second insulating layer IL2 may include an inorganic insulating material. Examples of inorganic insulating materials that may be used as the second insulating layer IL2 may include silicon oxide, silicon nitride, and silicon oxynitride. These materials may be used alone or in appropriate combination with each other.

[0076] The first and second connection electrodes CE1 and CE2 may be disposed on the second insulating layer IL2. The first and second connection electrodes CE1 and CE2 may be electrically connected to the active pattern ACT through contact holes formed in the first and second insulating layers IL1 and IL2. Each of the first and second connection electrodes CE1 and CE2 may include a metal, an alloy, a conductive metal oxide, a transparent conductive material, or the like.

[0077] The third insulating layer IL3 may be disposed on the second insulating layer IL2. The third insulating layer IL3 may cover the first connection electrode CE1 and the second connection electrode CE2. The third insulating layer IL3 may include an organic insulating material. Examples of organic insulating materials that may be used as the third insulating layer IL3 may include photoresists, polypropylene-based resins, polyimide-based resins, polyamide-based resins, siloxane-based resins, acrylic-based resins, or epoxy-based resins, etc. These materials may be used alone or in appropriate combination with each other. The third insulating layer IL3 may have a single-layer structure, or a multi-layer structure including a plurality of insulating layers.

[0078] Reference above Figure 3 The described structure of the circuit element layer CEL is an example and may be variously modified as can be understood by those having ordinary skill in the art.

[0079] The light emitting element layer LEL may be disposed on the circuit element layer CEL. The light emitting element layer LEL may include a pixel defining layer PDL and a light emitting element LED. The light emitting element LED may include a pixel electrode E1, an emission layer EML, and a common electrode E2. The light emitting element LED may be driven by a driving element TR.

[0080] The pixel electrode E1 may be disposed on the third insulating layer IL3. The pixel electrode E1 may be electrically connected to the driving element TR through a contact hole formed in the third insulating layer IL3. In an embodiment, the pixel electrode E1 may include metal, alloy, conductive metal oxide, transparent conductive material, or the like.

[0081] In an embodiment, a third connection electrode and a fourth insulating layer may be additionally disposed between the third insulating layer IL3 and the pixel electrode E1. The third connection electrode may be in contact with the first connection electrode CE1 or the second connection electrode CE2, and may include a metal, an alloy, a conductive metal oxide, or a transparent conductive material, etc. The fourth insulating layer may cover the third connection electrode, and may include an organic insulating material. In this case, the pixel electrode E1 may be in contact with the third connection electrode through a contact hole formed in the fourth insulating layer, and may be electrically connected to the driving element TR through the third connection electrode.

[0082] The pixel defining layer PDL may be disposed on the third insulating layer IL3. The pixel defining layer PDL may define a pixel opening exposing a portion of the pixel electrode E1. The first sub-pixel area SPXA1 may be defined by the pixel opening. In other words, the pixel defining layer PDL may be disposed in the non-emission area NEA. In an embodiment, the pixel defining layer PDL may include an organic insulating material. Examples of organic insulating materials that may be used as the pixel defining layer PDL may include photoresists, polyacrylic resins, polyimide resins, acrylic resins, and the like. These materials may be used alone or in appropriate combination with each other.

[0083] The emission layer EML may be disposed on the pixel electrode E1 in the pixel opening. The emission layer EML may include a suitable material that emits light. For example, the emission layer EML may include an organic light emitting material.

[0084] In embodiments, one or more functional layers such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer may be additionally disposed over and / or under the emission layer EML.

[0085] The common electrode E2 may be disposed on the emission layer EML. The common electrode E2 may include a conductive material such as a metal, an alloy, a conductive metal nitride, a conductive metal oxide, or a transparent conductive material. The common electrode E2 may have a single-layer structure, or a multi-layer structure including a plurality of conductive layers. In an embodiment, the common electrode E2 may extend continuously across a plurality of pixels.

[0086] The encapsulation layer ENC may be disposed on the light emitting element layer LEL. The encapsulation layer ENC may cover the light emitting element LED. The encapsulation layer ENC may protect the light emitting element LED from external moisture, heat, vibration, etc. In some embodiments, the encapsulation layer ENC may include a first inorganic encapsulation layer, an organic encapsulation layer disposed on the first inorganic encapsulation layer, and a second inorganic encapsulation layer disposed on the organic encapsulation layer.

[0087] In an embodiment, a light-transmitting film LTF may be disposed on the encapsulation layer ENC. The light-transmitting film LTF may define an opening exposing the upper surface of the encapsulation layer ENC. Each opening may be defined from the inner surface of the light-transmitting film LTF. In other words, the opening may penetrate the light-transmitting film LTF. In an embodiment, the light-transmitting film LTF may have a grid shape in a plan view. The light-transmitting film LTF may include an organic insulating material and / or an inorganic insulating material having a relatively high light transmittance.

[0088] In an embodiment, one or more additional functional layers may be disposed between the encapsulation layer ENC and the light-transmitting film LTF. For example, a sensing layer for detecting an external touch may be disposed between the encapsulation layer ENC and the light-transmitting film LTF. In this case, the opening of the light-transmitting film LTF may be defined as exposing the upper surface of the insulating layer directly located below.

[0089] The light-transmitting film LTF may have a first refractive index. The first refractive index may be about 1.1 or more. For example, the first refractive index may be about 1.1 to about 1.7. In more detail, the first refractive index may be about 1.4 or more. For example, the first refractive index may be about 1.4 to about 1.5. In an embodiment, the first refractive index may be less than the refractive index of the substrate SUB.

[0090] The light blocking pattern LP may be disposed on the encapsulation layer ENC. The light blocking pattern LP may be disposed in an opening defined in the light transparent film LTF. Accordingly, the light transparent film LTF may be disposed between the light blocking patterns LP. In other words, the light blocking pattern LP may expose the upper surface of the light transparent film LTF.

[0091] In an embodiment, light emitted by the light emitting element LED may be incident on the light blocking pattern LP, or may pass between the light blocking patterns LP. Some of the light incident on the light blocking pattern LP may pass through the light blocking pattern LP. Some of the light incident on the light blocking pattern LP may be reflected by the light blocking pattern LP. Some of the light incident on the light blocking pattern LP may be absorbed by the light blocking pattern LP.

[0092] In an embodiment, most of the light incident on the light blocking pattern LP may be reflected or absorbed by the light blocking pattern LP. Therefore, the light blocking pattern LP may control the viewing angle of the light emitted from the light emitting element LED.

[0093] The light blocking pattern LP may include various suitable materials that block light emitted from the light emitting element LED. Examples of materials that can be used as the light blocking pattern LP may include black pigment, black dye, carbon black, or chromium, etc. These materials may be used alone or in appropriate combination with each other. Another example of a material that can be used as the light blocking pattern LP may include a metal oxide such as molybdenum tantalum oxide (MTO).

[0094] The low refractive film LRF may be disposed on the light-transmitting film LTF. In more detail, in a plan view, the low refractive film LRF may overlap with the light-transmitting film LTF. For example, the low refractive film LRF may be disposed on the upper surface of the light-transmitting film LTF. For example, the low refractive film LRF may be directly disposed on the upper surface of the light-transmitting film LTF. Therefore, the low refractive film LRF and the light-transmitting film LTF may share each other's interface.

[0095] The low refraction film LRF may not be disposed in the opening of the light-transmitting film LTF. In other words, the low refraction film LRF may be selectively disposed on the upper surface of the light-transmitting film LTF. For example, the low refraction film LRF may have a grid shape in a plan view. In addition, in a plan view, the low refraction film LRF may be spaced apart from the light-blocking pattern LP. In other words, the low refraction film LRF may expose the light-blocking pattern LP.

[0096] The low refraction film LRF may include a suitable material having a relatively high light transmittance. Therefore, light emitted from the light emitting element LED may be emitted to the outside through the light-transmitting film LTF and the low refraction film LRF.

[0097] The low refractive film LRF may have a second refractive index. In an embodiment, the second refractive index may be less than the first refractive index of the light-transmitting film LTF. For example, the second refractive index may be about 1.4 or less. In more detail, the second refractive index may be about 1.1 to about 1.4. For example, the second refractive index may be about 1.3 or less. In more detail, the second refractive index may be about 1.1 to about 1.3, or about 1.2 to about 1.3.

[0098] In an embodiment, a difference between the first refractive index and the second refractive index may be about 0.1 to about 0.6, or about 0.1 to about 0.3.

[0099] Since the low refractive film LRF has a second refractive index less than the first refractive index of the light-transmitting film LTF, the low refractive film LRF can control the path of light emitted from below. In other words, the low refractive film LRF can control the path of light emitted from the light-emitting element LED and passing through the light-transmitting film LTF. For example, since the refractive index at the interface between the light-transmitting film LTF and the low refractive film LRF is different, the path of light can be changed. For example, the low refractive film LRF can change the path of light obliquely incident to the third direction D3. Therefore, the low refractive film LRF can improve the luminous efficiency of the display device DD.

[0100] The following will refer to Figure 4 The low refractive film LRF is described in more detail.

[0101] The planarization layer PLN may cover the light-transmitting film LTF, the light-blocking pattern LP, and the low-refractive film LRF. The planarization layer PLN may have a flat or substantially flat upper surface. In an embodiment, the planarization layer PLN may include the same material as that of the light-transmitting film LTF. For example, the planarization layer PLN may include an organic insulating material and / or an inorganic insulating material having a high light transmittance.

[0102] Figure 4 yes Figure 3 Magnified view of area A.

[0103] The following will further refer to Figure 4 The structure of the low refractive film LRF is described in more detail.

[0104] Reference Figure 3 and Figure 4 , the low refraction film LRF may include a plurality of refractors RP. The refractor RP may be a unit forming the low refraction film LRF. The refractor RP may be disposed on the light-transmitting film LTF. In more detail, in a plan view, the refractor RP may overlap with the light-transmitting film LTF. For example, the refractor RP may be disposed on an upper surface of the light-transmitting film LTF. For example, the refractor RP may be directly disposed on an upper surface of the light-transmitting film LTF. Therefore, the refractor RP and the light-transmitting film LTF may share an interface with each other.

[0105] The refractor RP may have a structure tilted at an angle (e.g., a specific or predetermined angle). For example, the refractor RP may be tilted to have an inclination angle θ relative to an imaginary line NL1 perpendicular to the upper surface of the light-transmitting film LTF. In this case, the imaginary line NL1 perpendicular to the upper surface of the light-transmitting film LTF may be parallel to the third direction D3. Since the refractor RP is tilted at this angle, the path of light emitted from the light-emitting element LED may be changed by the refractor RP.

[0106] The tilt angle θ of the refractor RP may be variously adjusted by variables such as an injection direction, an injection speed, and / or a deposition direction of a deposition material in a process according to the tilt deposition method described in more detail below.

[0107] In an embodiment, each refractor RP may include a suitable material having a third refractive index. In an embodiment, the third refractive index may be greater than the second refractive index of the low refractive film LRF. In other words, by having a structure in which each refractor RP is tilted to have an inclination angle θ, the low refractive film LRF may have a second refractive index that is less than the third refractive index of the material included in each refractor RP. For example, even if each refractor RP includes a material having a third refractive index that is greater than or substantially greater than the first refractive index of the light-transmitting film LTF, the low refractive film LRF itself may have a second refractive index that is less than the first refractive index of the light-transmitting film LTF.

[0108] In other words, even when the low refractive film LRF is formed using a suitable material having a refractive index higher than the first refractive index of the light-transmitting film LTF, since the low refractive film LRF is formed in a structure including a refractor RP having an inclination angle θ, the low refractive film LRF can have a lower refractive index than the light-transmitting film LTF.

[0109] In an embodiment, the low-refractive film LRF may further include a cavity CAV defined between the refractors RP. In other words, the cavity CAV may be defined from the space between the refractors RP. The cavity CAV may be filled with the planarization layer PLN. In other words, the planarization layer PLN may compensate for the step difference caused by the refractor RP. In other words, the planarization layer PLN may cover the refractor RP.

[0110] In an embodiment, each refractor RP may include an inorganic material. For example, each refractor RP may include a metal compound and / or an inorganic insulating material. Examples of metal compounds that may be used as the refractor RP may include magnesium fluoride (MgF 2 ) and titanium dioxide (TiO 2 ). These materials may be used alone or in appropriate combination with each other. Examples of inorganic insulating materials that may be used as the refractor RP may include silicon oxide, silicon nitride, and silicon oxynitride. These materials may be used alone or in appropriate combination with each other.

[0111] Figure 4 The shape of the refractor RP shown in is an example and may be variously modified as needed or desired. Figure 4 In the embodiment, the refractors RP are shown to be in contact with each other, but the present disclosure is not limited thereto. In other embodiments, the refractors RP may be spaced apart from each other.

[0112] The display device DD according to one or more embodiments may include a light-transmitting film LTF disposed on the light emitting element layer LEL and defining an opening, and a light-blocking pattern LP disposed in the opening. The light-blocking pattern LP may control a viewing angle of light emitted from the light emitting element LED.

[0113] In addition, the display device DD may include a low refraction film LRF, which is disposed on the light-transmitting film LTF and includes a refractor RP that is tilted to have a suitable inclination angle (e.g., a predetermined inclination angle). Therefore, the low refraction film LRF may have a refractive index that is less than the refractive index of the light-transmitting film LTF. In this way, the low refraction film LRF may control the path of light emitted from the light-emitting element LED and passing through the light-transmitting film LTF. In addition, the low refraction film LRF may improve the luminous efficiency of the display device DD. In addition, the light extraction efficiency of the display device DD may be improved.

[0114] In addition, since the low refractive film LRF has a structure including a refractor RP tilted to have an inclination angle θ, even when the low refractive film LRF is formed using a material having a refractive index greater than that of the light-transmitting film LTF, the low refractive film LRF can have a refractive index less than that of the light-transmitting film LTF. Therefore, the diversity of materials that can be used as the low refractive film LRF can be ensured. Therefore, by adopting a suitable material that can reduce or prevent damage during the manufacturing process of the display device DD, the low refractive film LRF can be more easily implemented. In this way, the reliability of the display device DD can be improved, and the display device DD can be more easily manufactured.

[0115] Figures 5 to 13 It is shown Figure 1 Various views of a method for manufacturing a display device.

[0116] Reference Figure 5 The circuit element layer CEL, the light emitting element layer LEL and the encapsulation layer ENC may be formed on the substrate SUB. The components included in the circuit element layer CEL, the light emitting element layer LEL and the encapsulation layer ENC may be formed by a suitable deposition process and a suitable patterning process (eg, exposure and development process) known to those skilled in the art.

[0117] Reference Figure 6 , the light-transmitting film LTF may be formed on the encapsulation layer ENC. In an embodiment, the light-transmitting film LTF may be formed by forming a primary light-transmitting film on the encapsulation layer ENC and then patterning the primary light-transmitting film through an exposure and development process. Therefore, as shown in the figure, the light-transmitting film LTF may define an opening that exposes a portion of the encapsulation layer ENC.

[0118] The light-transmitting film LTF may be formed of a suitable material having a first refractive index. In other words, the light-transmitting film LTF may be formed by applying a material having a first refractive index on the encapsulation layer ENC to form a preliminary light-transmitting film, and then patterning the preliminary light-transmitting film through an exposure and development process. Accordingly, the light-transmitting film LTF may be formed to have a first refractive index. In an embodiment, the light-transmitting film LTF may be formed of an organic insulating material and / or an inorganic insulating material.

[0119] Reference Figure 7 The low refraction film LRF may be formed on the light-transmitting film LTF. For example, the low refraction film LRF may be formed on the upper surface of the light-transmitting film LTF.

[0120] Further references Figure 8 The low refractive film LRF may be formed by an oblique deposition method. The process of forming the low refractive film LRF by the oblique deposition method will be described in more detail below.

[0121] like Figure 8As shown in , the substrate SUB can be fixed to the substrate holder SH. At this time, Figure 6 The circuit element layer CEL, the light emitting element layer LEL, the encapsulation layer ENC and the light-transmitting film LTF shown in FIG. 1 may be formed on the substrate SUB, but for the sake of convenience of explanation, Figure 8 The circuit element layer CEL, the light emitting element layer LEL, the encapsulation layer ENC and the light-transmitting film LTF are not shown.

[0122] The substrate SUB may face the first deposition source DS1 emitting the first deposition material DM1. The substrate SUB may be disposed obliquely at an angle (e.g., a specific or predetermined angle) relative to the surface emitting the first deposition material DM1. For example, the substrate SUB may be disposed to be inclined at a first angle X1 relative to an imaginary line NL2 perpendicular to the surface emitting the first deposition material DM1.

[0123] In an embodiment, the substrate SUB may be rotated by the substrate holder SH. In other words, the low refractive film LRF may be formed while the substrate SUB is rotated. However, the present disclosure is not limited thereto, and in some embodiments, the low refractive film LRF may be formed while the substrate SUB is fixed on the substrate holder SH.

[0124] Fig. 9 yes Figure 7 Further reference Fig. 9 Since the low refractive film LRF is formed by an inclined deposition method, the low refractive film LRF may be formed in a structure including a refractor RP, and the refractor RP may be formed to be inclined to have an inclination angle θ with respect to an imaginary line NL1 perpendicular to the upper surface of the light-transmitting film LTF. Figure 8 As shown in FIG. 1 , when the substrate SUB is disposed to be inclined at a first angle X1 relative to an imaginary line N2 perpendicular to a surface emitting the first deposition material DM1, the inclination angle θ of each refractor RP may be 90 degrees minus the first angle X1 (eg, 90-X1). However, the present disclosure is not limited thereto.

[0125] Since the refractor RP is tilted at a desired angle (eg, a specific or predetermined angle), the path of light emitted from the light emitting element LED can be changed by the refractor RP. The tilt angle θ of the refractor RP can be changed by a variable (eg, according to the above reference Figure 8 The tilted deposition method described herein can be adjusted by adjusting the injection direction, injection speed and / or deposition direction of the deposition material.

[0126] In an embodiment, the first deposition material DM1 may include a suitable material having a third refractive index. In other words, the refractor RP may be formed of a material having a third refractive index. Even when the first deposition material DM1 includes a material having a third refractive index greater than the second refractive index, the low refractive film LRF formed by the inclined deposition method and including the refractor RP inclined to have an inclination angle θ may have a second refractive index less than the first refractive index of the light-transmitting film LTF.

[0127] For example, the first deposition material DM1 may include a suitable material having a refractive index greater than or substantially greater than the first refractive index of the light-transmitting film LTF. In other words, since the low-refractive film LRF is formed by an oblique deposition method, even when the first deposition material DM1 has a refractive index greater than the first refractive index of the light-transmitting film LTF, a low-refractive film LRF having a refractive index less than the first refractive index of the light-transmitting film LTF may be provided. Therefore, the diversity of materials that can be used as the first deposition material DM1 can be ensured. In this way, by adopting a deposition material that can reduce or prevent damage during the manufacturing process of the display device DD, the low-refractive film LRF can be more easily formed. In addition, the display device DD can be manufactured more easily.

[0128] In an embodiment, the first deposition material DM1 may include an inorganic material. In other words, the refractor RP may be formed of one or more inorganic materials. For example, the first deposition material DM1 may include a metal compound and / or an inorganic insulating material. Examples of metal compounds that may be used as the first deposition material DM1 may include magnesium fluoride (MgF 2 ) and titanium dioxide (TiO 2 ). These materials may be used alone or in appropriate combination with each other. Examples of inorganic insulating materials that may be used as the first deposition material DM1 may include silicon oxide, silicon nitride, and silicon oxynitride. These materials may be used alone or in appropriate combination with each other.

[0129] In an embodiment, Figure 8 As shown in , the auxiliary plate AXP may be additionally disposed between the substrate SUB and the first deposition source DS1. In other words, the auxiliary plate AXP may be disposed on the path of the first deposition material DM1. In an embodiment, the auxiliary plate AXP may be rotated. In other words, the low refractive film LRF may be formed when the auxiliary plate AXP is rotated. However, the present disclosure is not limited thereto, and in some embodiments, the low refractive film LRF may be formed when the auxiliary plate AXP is fixed. The auxiliary plate AXP may have a mesh shape. However, the shape of the auxiliary plate AXP is not limited thereto.

[0130] The auxiliary plate AXP can control the traveling direction of the first deposition material DM1. For example, the auxiliary plate AXP can adjust the divergence angle of the first deposition material DM1. Therefore, when the auxiliary plate AXP is arranged on the path of the first deposition material DM1, it is easier to selectively deposit the first deposition material DM1 on (for example, only on) the upper surface of the light-transmitting film LTF. In addition, even when the first deposition source DS1 and the substrate SUB face each other in a horizontal direction parallel to or substantially parallel to the ground, it is easier to deposit the first deposition material DM1 on the light-transmitting film LTF. Therefore, the low refraction film LRF can be more easily formed. However, the present disclosure is not limited to this, and the auxiliary plate AXP can be omitted.

[0131] Reference Fig.10 , the sacrificial layer SL may be formed on the low refractive film LRF. In an embodiment, the sacrificial layer SL may be formed of a transparent conductive oxide. Examples of transparent conductive oxides that may be used as the sacrificial layer SL may include indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO), indium tin gallium oxide (ITGO), or indium tin gallium zinc oxide (ITGZO), etc. These materials may be used alone or in appropriate combination with each other. However, the material that may be used as the sacrificial layer SL is not necessarily limited thereto.

[0132] Further references Fig.11 The sacrificial layer SL may be formed by an oblique deposition method. The process of forming the sacrificial layer SL by the oblique deposition method will be described in more detail below.

[0133] Similar to the process of forming the low refractive film LRF, the substrate SUB may be fixed to the substrate holder SH. At this time, Figure 7 The circuit element layer CEL, the light emitting element layer LEL, the encapsulation layer ENC, the light-transmitting film LTF and the low-refractive film LRF shown in FIG. 1 are formed on the substrate SUB, but for the convenience of explanation, Fig.11 The circuit element layer CEL, the light emitting element layer LEL, the encapsulation layer ENC, the light-transmitting film LTF, and the low-refractive film LRF are not shown.

[0134] The substrate SUB may face the second deposition source DS2 emitting the second deposition material DM2. Figure 8 The first deposition source DS1 and Fig.11 The second deposition sources DS2 in may be the same. However, the present disclosure is not limited thereto.

[0135] The substrate SUB may be disposed to be tilted at an angle (eg, a specific or predetermined angle) relative to the surface emitting the second deposition material DM2. For example, the substrate SUB may be disposed to be tilted at a second angle X2 relative to an imaginary line NL3 perpendicular to the surface emitting the second deposition material DM2.

[0136] In an embodiment, Figure 8 The imaginary line NL2 and the imaginary line NL3 perpendicular to the surface of the first deposition material DM1 are Fig.11 The imaginary lines NL3 perpendicular to the surface from which the second deposition material DM2 is emitted may be the same or substantially the same. However, the present disclosure is not limited thereto.

[0137] In an embodiment, the substrate SUB may be rotated by the substrate holder SH. In other words, the sacrificial layer SL may be formed while the substrate SUB is rotated. However, the present disclosure is not limited thereto, and in some embodiments, the sacrificial layer SL may be formed while the substrate SUB is fixed on the substrate holder SH.

[0138] Since the sacrificial layer SL is formed by the oblique deposition method, the sacrificial layer SL may be formed on the upper surface of the low refractive film LRF and may not be formed in the opening of the light transmitting film LTF. In other words, the sacrificial layer SL may be selectively formed on the upper surface of the low refractive film LRF.

[0139] In an embodiment, the second deposition material DM2 may include a transparent conductive oxide. Examples of transparent conductive oxides that may be used as the second deposition material DM2 may include indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO), indium tin gallium oxide (ITGO), or indium tin gallium zinc oxide (ITGZO), etc. These materials may be used alone or in appropriate combination with each other. However, the material that may be used as the second deposition material DM2 is not limited thereto.

[0140] Even in the process of forming the sacrificial layer SL by the oblique deposition method, the auxiliary plate AXP may be additionally disposed between the substrate SUB and the second deposition source DS2. In other words, the auxiliary plate AXP may be disposed on the path of the second deposition material DM2. Figure 8 The auxiliary board AXP is described, so a redundant description will not be repeated.

[0141] The auxiliary plate AXP can control the traveling direction of the second deposition material DM2. For example, the auxiliary plate AXP can adjust the divergence angle of the second deposition material DM2. Therefore, when the auxiliary plate AXP is arranged on the path of the second deposition material DM2, it is easier to selectively deposit the second deposition material DM2 on (for example, only on) the upper surface of the low refractive film LRF. In addition, even when the second deposition source DS2 and the substrate SUB face each other in a horizontal direction parallel to the ground, it is easier to deposit the second deposition material DM2 on the low refractive film LRF. Therefore, the sacrificial layer SL can be more easily formed. However, the present disclosure is not limited to this, and the auxiliary plate AXP can be omitted.

[0142] Reference Fig.12 , the light blocking patterns LP may be formed in the openings of the light-transmitting film LTF. In other words, the light blocking patterns LP may fill the openings of the light-transmitting film LTF. For example, the upper surface of each light blocking pattern LP may be formed on the same or substantially the same plane as the upper surface of the light-transmitting film LTF. The light blocking patterns LP may be formed using black pigment, black dye, carbon black, chrome, or the like.

[0143] like Fig.12 As shown in FIG. 8 , the dummy light blocking pattern DLP may be formed on the sacrificial layer SL.

[0144] The virtual light blocking pattern DLP may be formed together with the light blocking pattern LP. In other words, in the process of filling the light blocking pattern LP in the opening of the light-transmitting film LTF, the virtual light blocking pattern DLP may be formed on the sacrificial layer SL. In other words, the virtual light blocking pattern DLP may be formed of the same material as that of the light blocking pattern LP. For example, in the process of filling the light blocking pattern LP into the opening of the light-transmitting film LTF, black pigment, black dye, carbon black, chrome, or the like may be accumulated on the sacrificial layer SL to form the virtual light blocking pattern DLP.

[0145] The dummy light blocking pattern DLP may be spaced apart from the light blocking pattern LP. In other words, the dummy light blocking pattern DLP and the light blocking pattern LP may be spaced apart from each other by the low refraction film LRF and the sacrificial layer SL. In other words, the dummy light blocking pattern DLP may be selectively formed on the upper surface of the sacrificial layer SL.

[0146] Reference Fig.12 and Fig.13 , the dummy light blocking pattern DLP may be removed by removing the sacrificial layer SL. In other words, since the dummy light blocking pattern DLP may be selectively formed on the upper surface of the sacrificial layer SL, the dummy light blocking pattern DLP may be removed together with the sacrificial layer SL by the process of removing the sacrificial layer SL.

[0147] In an embodiment, the sacrificial layer SL may be removed by an etching process. In other words, the sacrificial layer SL may be formed of a suitable material having a relatively high etching rate in the etching process. For example, the sacrificial layer SL may be completely or substantially completely removed by the etching process. Therefore, all or substantially all of the virtual light blocking pattern DLP may also be removed.

[0148] Even after the virtual light blocking pattern DLP is removed by removing the sacrificial layer SL through an etching process, the low refractive film LRF may remain. In other words, the low refractive film LRF may be formed of a suitable material having a relatively low etching rate in the etching process. For example, the sacrificial layer SL may be formed of a suitable material having a first etching rate for the etching process, and the low refractive film LRF may be formed of a suitable material for the etching process having a second etching rate less than the first etching rate. In more detail, the refractor included in the low refractive film LRF (for example, see Fig. 9 The refractor RP in the embodiment of the present invention may be formed to have a second etching rate that is less than the first etching rate. For example, the low refractive film LRF may not be removed or substantially removed by the etching process.

[0149] In an embodiment, the etching process may be a wet etching process using an etching liquid. For example, the sacrificial layer SL may be completely or substantially completely removed by a wet etching process using an etching liquid, and the low refractive film LRF may not be removed or substantially removed by a wet etching process using an etching liquid.

[0150] However, the present disclosure is not limited thereto, and the etching process may be a dry etching process using an etching gas. For example, the sacrificial layer SL may be completely or substantially completely removed by a dry etching process using an etching gas, and the low refractive film LRF may not be removed or substantially removed by a dry etching process using an etching gas.

[0151] Even after the virtual light blocking pattern DLP is removed by removing the sacrificial layer SL through an etching process, the light blocking pattern LP may remain. In other words, during the process of removing the sacrificial layer SL and the virtual light blocking pattern DLP, the light blocking pattern LP may not be removed or substantially not be removed. In other words, because the virtual light blocking pattern DLP is spaced apart from the light blocking pattern LP, the light blocking pattern LP is not affected in the process of removing the virtual light blocking pattern DLP.

[0152] After removing the sacrificial layer SL and the dummy light blocking pattern DLP, a planarization layer PLN may be formed as shown in FIG. Figure 3 As shown in . The planarization layer PLN may be formed to cover the light-transmitting film LTF, the light-blocking pattern LP, and the low-refractive film LRF. In addition, the planarization layer PLN may be formed to fill the cavity of the low-refractive film LRF (for example, see Fig. 9 Cavity (CAV) in the cavity.

[0153] According to one or more embodiments of the method of manufacturing the display device DD, a low refraction film LRF having a refractive index lower than that of the light transparent film LTF may be formed on the light transparent film LTF by an oblique deposition method. By forming the low refraction film LRF by the oblique deposition method, the low refraction film LRF may be selectively formed on the upper surface of the light transparent film LTF.

[0154] In addition, since the low refractive film LRF is formed by an oblique deposition method, even when the low refractive film LRF is formed using a material having a refractive index greater than that of the light-transmitting film LTF, the low refractive film LRF may have a refractive index lower than that of the light-transmitting film LTF. Therefore, the diversity of materials that can be used as the low refractive film LRF can be ensured. Therefore, by adopting a material that can reduce or prevent damage during the manufacturing process of the display device DD, the low refractive film LRF can be more easily implemented. Therefore, the display device DD can be more easily manufactured.

[0155] In addition, according to one or more embodiments of the manufacturing method of the display device DD, a sacrificial layer SL may be formed on the low-refractive film LRF, a virtual light blocking pattern DLP may be formed on the sacrificial layer SL, and the virtual light blocking pattern DLP may be removed by removing the sacrificial layer SL. Therefore, even when the polishing process is omitted, the upper surface of each light blocking pattern LP may be formed on the same or substantially the same plane as the upper surface of the light-transmitting film LTF. In other words, even when the polishing process is omitted, the plane on which the upper surface of each light blocking pattern LP and the upper surface of the light-transmitting film LTF are formed may be implemented to be flat or substantially flat. In other words, even when the polishing process is omitted, the material that can be used to form the light blocking pattern LP will not remain or substantially remain on the upper surface of the light-transmitting film LTF.

[0156] According to one or more embodiments of the method for manufacturing the display device DD, the polishing process for forming the light blocking pattern LP can be omitted. Therefore, the upper surface of the light-transmitting film LTF is not damaged by the polishing process. In this way, the surface characteristics of the upper surface of the light-transmitting film LTF can be improved. In addition, the reliability of the display device DD can be improved, and the light extraction efficiency of the display device DD can be improved.

[0157] The foregoing is an illustration of some embodiments of the present disclosure and should not be construed as limiting the present disclosure. Although some embodiments have been described, it will be readily understood by those skilled in the art that various modifications are possible in the embodiments without departing from the spirit and scope of the present disclosure. It should be understood that the description of the features or aspects in each embodiment should generally be considered to be applicable to other similar features or aspects in other embodiments, unless otherwise described. Therefore, it is obvious to those of ordinary skill in the art that the features, characteristics and / or elements described in conjunction with a particular embodiment can be used alone or in combination with the features, characteristics and / or elements described in conjunction with other embodiments, unless otherwise specifically stated. Therefore, it should be understood that the foregoing is an illustration of various exemplary embodiments and should not be construed as being limited to the specific embodiments disclosed herein, and various modifications to the disclosed embodiments and other exemplary embodiments are intended to be included in the spirit and scope of the present disclosure as defined in the appended claims and their equivalents.

Claims

1. A display device, wherein: The display device comprises: a light emitting element layer including at least one light emitting device configured to emit light; a light-transmitting film on the light-emitting element layer, the light-transmitting film having a first refractive index and defining an opening; a light blocking pattern on the light emitting element layer and in the opening; and A low refraction film, on the light-transmitting film, has a second refractive index less than the first refractive index and includes a plurality of refractors, each of which is inclined to have an inclination angle relative to an imaginary line perpendicular to an upper surface of the light-transmitting film.

2. The display device according to claim 1, wherein: The first refractive index is 1.4 or more, and the second refractive index is 1.3 or less.

3. The display device according to claim 1, wherein: Each of the plurality of refractors includes a material having a third index of refraction greater than the second index of refraction.

4. The display device according to claim 1, wherein: Each of the plurality of refractors includes an inorganic material.

5. The display device according to claim 4, wherein: Each of the plurality of refractors includes at least one of a metal compound and an inorganic insulating material.

6. The display device according to claim 5, wherein: Each of the plurality of refractors includes at least one of magnesium fluoride, titanium dioxide, silicon oxide, silicon nitride, and silicon oxynitride.

7. The display device according to claim 1, wherein: The low refraction film overlaps the light-transmitting film, and the low refraction film is spaced apart from the light blocking pattern in a plan view.

8. The display device according to claim 1, wherein: The low-refractive film is not positioned in the opening.

9. The display device according to claim 1, wherein: The display device further includes a planarization layer on the light-transmitting film and the light-blocking pattern and covering the refractor.

10. The display device according to claim 9, wherein: The low-refractive film further includes a cavity defined between the plurality of refractors, and the cavity of the low-refractive film is filled with the planarization layer.

11. The display device according to claim 1, wherein: The light blocking pattern includes at least one of a black pigment, a black dye, and molybdenum tantalum oxide.

12. A method for manufacturing a display device, wherein: The method comprises: forming a light-emitting element layer on a substrate, the light-emitting element layer including at least one light-emitting element configured to emit light; forming a light-transmitting film on the light-emitting element layer, the light-transmitting film having a first refractive index and defining an opening; forming a low refractive film on the light-transmitting film, the low refractive film having a second refractive index smaller than the first refractive index and including a refractor inclined to have an inclination angle with respect to an imaginary line perpendicular to an upper surface of the light-transmitting film; and A light blocking pattern is formed in the opening.

13. The method according to claim 12, wherein: The low-refractive film is not formed in the opening.

14. The method according to claim 12, wherein: In the forming of the low refraction film, the low refraction film is deposited on the light-transmitting film by arranging the substrate to be inclined with respect to an imaginary line perpendicular to a surface from which a deposition material for depositing the low refraction film is emitted.

15. The method according to claim 14, wherein: In the forming of the low-refractive film, the low-refractive film is deposited by additionally providing an auxiliary plate to control a traveling direction of the deposition material between a surface from which the deposition material is emitted and the substrate.

16. The method according to claim 15, wherein: The auxiliary plate has a mesh shape.

17. The method according to claim 14, wherein: The deposited material has a third refractive index greater than the second refractive index.

18. The method according to claim 14, wherein: The deposition material includes an inorganic material.

19. The method according to claim 18, wherein: The deposition material includes at least one of a metal compound and an inorganic insulating material.

20. The method according to claim 12, wherein: The method further includes forming a planarization layer on the light-transmitting film to cover the refractor.

21. The method according to claim 12, wherein: The method further comprises: forming a sacrificial layer on the low-refractive film; forming a dummy light blocking pattern on the sacrificial layer; and removing the virtual light blocking pattern by removing the sacrificial layer, The dummy light blocking pattern is formed in the same process as that of the light blocking pattern.

22. The method according to claim 21, wherein: The sacrificial layer is not formed in the opening.

23. The method according to claim 21, wherein: In the forming of the sacrificial layer, the sacrificial layer is deposited on the low-refractive film by arranging the substrate to be inclined with respect to an imaginary line which is perpendicular to a surface from which a deposition material for depositing the sacrificial layer is emitted.

24. The method according to claim 21, wherein: In the removing of the dummy light blocking pattern, the sacrificial layer is removed through an etching process.

25. The method according to claim 24, wherein: The sacrificial layer is formed to have a first etching rate relative to the etching process, and The low refractive film is formed to have a second etching rate smaller than the first etching rate relative to the etching process.

26. The method according to claim 21, wherein: The dummy light blocking pattern is spaced apart from the light blocking pattern.

27. The method of claim 21, wherein: After the dummy light blocking pattern is removed by removing the sacrificial layer, the low refraction film and the light blocking pattern remain.

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