Display module, preparation method and electronic equipment

Abstract

The embodiment of the invention discloses a display module, a preparation method and electronic equipment. The display module comprises a substrate and a plurality of light-emitting sub-pixels arranged on the substrate. Each light-emitting sub-pixel comprises a first electrode layer, an insulating mask plate, a light-emitting layer and a second electrode layer, the first electrode layer, the insulating mask plate and the second electrode layer are sequentially stacked in the direction away from the substrate; the light-emitting layer comprises light-emitting materials, the insulating mask plate comprises a plurality of pixelated through holes, and the light-emitting materials are respectively arranged in the plurality of pixelated through holes; the plurality of pixelated through holes are in one-to-one correspondence with the plurality of light-emitting sub-pixels; the aperture of the plurality of pixelated through holes is 10 nm to 5 [mu] m. Therefore, the sizes of the pixelated through holes are micron-scale and submicron-scale, so that the nano-scale to micron-scale pixelated display is realized, and the pixel density required by near-eye display equipment is realized. And the insulating mask plate separates the luminescent material, so that the safety and the working efficiency of the display module are improved.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of display technology, and in particular to a display module and a preparation method thereof, and an electronic device. Background Art

[0002] With the widespread application of 5G communication technology, the concept of the metaverse has emerged. In terms of hardware equipment, the metaverse requires the use of near-eye display devices (NED) such as augmented reality technology (AR) and virtual reality technology (VR).

[0003] However, the brightness and pixel resolution of conventional display devices cannot meet the requirements.

[0004] Quantum dot light-emitting diodes (QLEDs) have the advantages of high brightness, high color purity, and high luminous efficiency, but there are certain process difficulties in achieving micron-level and submicron-level pixel density. Summary of the invention

[0005] The embodiments of the present application provide a display module and a preparation method, and an electronic device to achieve the miniaturization of light-emitting sub-pixels in a quantum dot light-emitting diode.

[0006] In order to achieve the above objectives, this application adopts the following technical solutions:

[0007] In the first aspect of the present application, a display module is provided, comprising: a substrate, and a plurality of light-emitting sub-pixels arranged on the substrate; the plurality of light-emitting sub-pixels comprise: a first electrode layer, an insulating mask plate, a light-emitting layer, and a second electrode layer; the first electrode layer, the insulating mask plate, and the second electrode layer are stacked in sequence in a direction away from the substrate; the light-emitting layer comprises a light-emitting material, the insulating mask plate comprises a plurality of pixelated through holes, and the light-emitting materials are respectively arranged in the plurality of pixelated through holes; the plurality of pixelated through holes correspond one to one with the plurality of light-emitting sub-pixels; the aperture of the plurality of pixelated through holes is 10nm-5um. Thus, the size of the hole is micron-level or submicron-level, and the light-emitting material is filled in the plurality of pixelated through holes, as the light-emitting layer, and the plurality of pixelated through holes correspond one to one with the plurality of light-emitting sub-pixels. Pixelated display from nanometer to micron level is realized, and the pixel density required by the near-eye display device is realized. In addition, the insulating mask plate in the light-emitting layer adopts a porous structure, which can protect the quantum dots, is conducive to heat dissipation, and has better water and oxygen isolation performance. In addition, the insulating mask plate uses insulating materials to separate multiple luminescent materials, which can suppress leakage current in the non-luminescent areas of the first electrode layer and the second electrode layer, so that current can only pass through the luminescent material, thereby improving the safety and working efficiency of the display module.

[0008] In an optional implementation, the quantum dot material includes: three-dimensional quantum dots, two-dimensional quantum sheets or one-dimensional quantum rod structures, which can further shrink the light output angle of the quantum dot light-emitting diode device and improve the performance of the near-eye display device.

[0009] In an optional implementation, the insulating mask plate is an anodized aluminum mask plate or a dielectric mask plate. Therefore, both the anodized aluminum mask plate and the dielectric mask plate can be used in the light-emitting layer to achieve nanometer to micrometer pixel display.

[0010] In an optional implementation, the anodized aluminum mask is formed by etching an aluminum film in an acidic solution through an anodic electrochemical oxidation process. As a result, the aluminum film undergoes an anodic electrochemical reaction in the acidic solution to form an anodized aluminum mask including a plurality of pixelated through holes. By adjusting the electrochemical oxidation process parameters, for example, by adjusting the aperture, depth, and density of the pixelated through holes, the size, thickness, and density of the light-emitting sub-pixels can be controlled accordingly.

[0011] In an optional implementation, the dielectric mask is formed by photolithography and etching of a dielectric film. Thus, it is not necessary to use the electrochemical oxidation reaction of the aluminum film, avoiding the complicated electrochemical process control steps, and combining micro-nano processing technologies such as photolithography-etching, the pixel arrangement and shape formed are more diverse and controllable.

[0012] In an optional implementation, the dielectric film is made of silicon dioxide, silicon nitride, titanium dioxide, hafnium dioxide, silazane polymer, zinc sulfide, and silicon oxynitride. Thus, the dielectric film made of the above materials is insulated and can form multiple pixelated through holes through photolithography and etching processes, providing more material options.

[0013] In an optional implementation, the display module includes: a plurality of pixel regions, each pixel region includes at least three adjacent light-emitting sub-pixels respectively used to display three primary colors; the light-emitting layers of the plurality of pixel regions are formed by the light-emitting materials of different colors injected into the plurality of pixelated through holes of the insulating mask plate in different regions, and the color of the light-emitting material corresponds to the color displayed by the light-emitting sub-pixel. Thus, a full-color quantum dot display module including red, green and blue light-emitting sub-pixels can be formed.

[0014] In an optional implementation, the display module further includes: a hole injection layer and a hole transport layer, the hole injection layer is located on a side of the first electrode layer away from the driving backplane, the hole transport layer is located between the hole injection layer and the light-emitting layer, and the hole injection layer and the hole transport layer are located in a plurality of pixelated through holes of the insulating mask plate. Thus, the hole injection layer and the hole transport layer can be formed by a pixelated filling process.

[0015] In an optional implementation, the display module further includes: an electron transport layer, the electron transport layer is located between the light-emitting layer and the second electrode layer, and the electron transport layer is located in a plurality of pixelated through holes of the insulating mask plate. Thus, the electron transport layer can be formed by a pixelated filling process.

[0016] In an optional implementation, the second electrode layer is located in a plurality of pixelated through holes of the insulating mask plate, thereby enabling the second electrode layer to be formed through a pixelated filling process.

[0017] In an optional implementation, the quantum dot material is injected into the plurality of pixelated through holes by inkjet printing, spin coating, drop coating, photolithography or electrochemical deposition process. Thus, the filling process of the quantum dot material includes extremely high adaptability, reducing the process difficulty.

[0018] According to a second aspect of the present application, a display module is provided, comprising: a substrate, and a plurality of light-emitting sub-pixels arranged on the substrate; the plurality of light-emitting sub-pixels comprise: a first electrode layer, an aluminum film, a dielectric film, a plurality of anodized aluminum mask plates, a light-emitting layer, and a second electrode layer, wherein the first electrode layer, the aluminum film, the dielectric film, and the second electrode layer are sequentially stacked in a direction away from the substrate; the plurality of anodized aluminum mask plates are arranged in the aluminum film, the light-emitting layer comprises a light-emitting material, the anodized aluminum mask plate comprises a plurality of through holes, and the light-emitting material is respectively arranged in the plurality of through holes; the dielectric film comprises a plurality of pixelated through holes, the aperture of the plurality of pixelated through holes is 10nm-5um, the plurality of anodized aluminum mask plates correspond one-to-one to the plurality of pixelated through holes, and the plurality of pixelated through holes correspond one-to-one to the plurality of light-emitting sub-pixels. Therefore, compared with the above-mentioned display module, an anodized aluminum insulating mask plate can be formed only at the pixelated through-hole position of the dielectric film, and a columnar quantum dot filling material with a submicron or nanometer quantum dot size can be formed in the anodized aluminum insulating mask plate, and the aluminum film structure is retained at other positions. The aluminum film can be used as a metal retaining wall. Under the protective layer formed by the aluminum film, pixel crosstalk can be reduced and the light shape can be optimized. In addition, the high-reflection interface of the aluminum metal can form a reflective cup structure, optimize the light shape, narrow the light shape, and facilitate the coupling of the quantum dot light-emitting device and the waveguide module, increase the light output efficiency of the overall system, reduce power consumption, and improve the performance of the near-eye display device.

[0019] In an optional implementation, the anodized aluminum mask is formed by corroding an aluminum film in an acidic solution through an anodic electrochemical oxidation process.

[0020] In an optional implementation, the plurality of pixelated through holes on the dielectric film are formed by photolithography and etching processes.

[0021] In an optional implementation, the display module includes: multiple pixel areas, each pixel area includes at least three adjacent light-emitting sub-pixels for displaying three primary colors respectively; the light-emitting layers of the multiple pixel areas are formed by the light-emitting materials of different colors injected into the multiple through holes of the insulating mask plate by multiple pixelated through holes in different regions.

[0022] In an optional implementation, the display module further includes: a hole injection layer and a hole transport layer, the hole injection layer is located on a side of the first electrode layer away from the substrate, and the hole transport layer is located between the hole injection layer and the light-emitting layer.

[0023] In an optional implementation, the display module further includes: an electron transport layer, wherein the electron transport layer is located between the light-emitting layer and the second electrode layer.

[0024] The third aspect of the present application provides a method for preparing a display device, the method comprising: forming a first electrode layer on a substrate; arranging an insulating mask plate on a side of the first electrode layer away from the substrate, the insulating mask plate comprising a plurality of pixelated through holes, the aperture of the plurality of pixelated through holes being 10nm-5um; injecting a luminescent material into the plurality of pixelated through holes of the insulating mask plate to obtain a luminescent layer; the first electrode layer, the luminescent layer and the second electrode layer form a plurality of luminescent sub-pixels, the plurality of pixelated through holes corresponding to the plurality of luminescent sub-pixels one by one; arranging a second electrode layer on the insulating mask plate. Thus, the preparation process can prepare a display module as described above, the size of the holes of the obtained insulating mask plate is micron-level or submicron-level, the luminescent material is filled in the plurality of pixelated through holes, as a luminescent layer, the plurality of pixelated through holes corresponding to the plurality of luminescent sub-pixels one by one. Pixelated display from nanometer to micron level is realized, and the pixel density required for near-eye display devices is realized. In addition, the insulating mask plate in the luminescent layer adopts a porous structure, which can protect quantum dots, is conducive to heat dissipation, and has better water and oxygen isolation performance. In addition, the insulating mask plate uses insulating materials to separate multiple luminescent materials, which can suppress leakage current in the non-luminescent areas of the first electrode layer and the second electrode layer, so that current can only pass through the luminescent material, thereby improving the safety and working efficiency of the display module.

[0025] The fourth aspect of the present application provides a method for preparing a display module, the method comprising: forming a first electrode layer on a substrate; forming an aluminum film on a side of the first electrode layer away from the substrate; forming a dielectric film on the aluminum film; performing selective photolithography and etching on the dielectric film to form a plurality of pixelated through holes, the aperture of the plurality of pixelated through holes being: 10nm-5um; corroding the aluminum film at the plurality of pixelated through holes by an anodic electrochemical oxidation process in an acidic solution, and forming a plurality of anodized aluminum mask plates at the plurality of pixelated through holes; wherein the plurality of anodized aluminum mask plates correspond one-to-one to the plurality of pixelated through holes, and the dielectric film corresponds to the aluminum film; the anodized aluminum mask plate comprises a plurality of through holes; injecting a luminescent material into the plurality of through holes of the anodized aluminum mask plate through the plurality of pixelated through holes to obtain a luminescent layer; the first electrode layer, the luminescent layer and the second electrode layer form a plurality of luminescent sub-pixels, the plurality of pixelated through holes correspond one-to-one to the plurality of luminescent sub-pixels; and arranging a second electrode layer on a side of the dielectric film away from the substrate. Thus, the preparation process can prepare the display module as described above, and can form an anodized aluminum insulating mask plate only at the pixelated through-hole position of the dielectric film, and form a columnar quantum dot filling material with micro- and nano-sized quantum dots in the anodized aluminum insulating mask plate, and retain the aluminum film structure at other positions. The aluminum film can be used as a metal retaining wall. Under the protective layer formed by the aluminum film, pixel crosstalk can be reduced and the light shape can be optimized. In addition, the high-reflection interface of the aluminum metal can form a reflective cup structure, optimize the light shape, narrow the light shape, and facilitate the coupling of the quantum dot light-emitting device and the waveguide module, increase the light output efficiency of the overall system, reduce power consumption, and improve the performance of the near-eye display device.

[0026] In a fifth aspect of the present application, an electronic device is provided, comprising: a processor and the display module as described above, wherein the processor is used to control the display module to display an image. Thus, the electronic device adopts the display module as described above, improves the brightness of the display module, and can achieve micron-level and sub-micron-level pixel density.

[0027] In an optional implementation, the electronic device is a near-eye display device, thereby improving the performance of the near-eye display device.

[0028] The display module provided by the embodiment of the present application, in some embodiments, includes: a substrate, and a plurality of light-emitting sub-pixels arranged on the substrate; the plurality of light-emitting sub-pixels include: a first electrode layer, an insulating mask plate, a light-emitting layer and a second electrode layer; the first electrode layer, the insulating mask plate and the second electrode layer are stacked in sequence in a direction away from the substrate. The insulating mask plate is provided with a plurality of pixelated through holes, the size of the holes is micron-level and sub-micron-level, and the light-emitting material is filled in the plurality of pixelated through holes, as a light-emitting layer, and the plurality of pixelated through holes and the plurality of light-emitting sub-pixels correspond one to one. Pixelated display from nanometer to micron level is realized, and the pixel density required by the near-eye display device is realized. In addition, the insulating mask plate in the light-emitting layer adopts a porous structure, which can protect quantum dots, is conducive to heat dissipation, and has better water and oxygen isolation performance. In addition, the insulating mask plate adopts an insulating material to separate the plurality of light-emitting materials, which can suppress the leakage current of the non-light-emitting area of ​​the first electrode layer and the second electrode layer, so that the current can only pass through the light-emitting material, thereby improving the safety and working efficiency of the display module.

[0029] In other embodiments, the display module includes: a substrate, and a plurality of light-emitting sub-pixels arranged on the substrate; the plurality of light-emitting sub-pixels include: a first electrode layer, an aluminum film, a dielectric film, a plurality of anodized aluminum mask plates, a light-emitting layer and a second electrode layer, and the first electrode layer, the aluminum film, the dielectric film and the second electrode layer are stacked in sequence in a direction away from the substrate; the plurality of anodized aluminum mask plates are arranged in the aluminum film, the light-emitting layer includes a light-emitting material, the anodized aluminum mask plate includes a plurality of through holes, and the light-emitting materials are respectively arranged in the plurality of through holes; the dielectric film includes a plurality of pixelated through holes, the aperture of the plurality of pixelated through holes is 10nm-5um, the plurality of anodized aluminum mask plates correspond one-to-one to the plurality of pixelated through holes, and the plurality of pixelated through holes correspond one-to-one to the plurality of light-emitting sub-pixels. Compared with the above-mentioned display module, an anodized aluminum insulating mask plate can be formed only at the pixelated through-hole position of the dielectric film, and a columnar quantum dot filling material with a size of micrometer and nanometer quantum dots can be formed in the anodized aluminum insulating mask plate, and the aluminum film structure is retained at other positions. The aluminum film can be used as a metal retaining wall. Under the protective layer formed by the aluminum film, pixel crosstalk can be reduced and the light shape can be optimized. In addition, the high-reflection interface of the aluminum metal can form a reflective cup structure, optimize the light shape, narrow the light shape, and facilitate the coupling of the quantum dot light-emitting device and the waveguide module, increase the light output efficiency of the overall system, reduce power consumption, and improve the performance of the near-eye display device. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application;

[0031] Figure 2 A schematic diagram of the arrangement of light-emitting sub-pixels of a display module provided in an embodiment of the present application;

[0032] Figure 3 A schematic diagram of the arrangement of light-emitting sub-pixels of another display module provided in an embodiment of the present application;

[0033] Figure 4 It is a structural schematic diagram of a display module;

[0034] Figure 5 A schematic diagram of the structure of a quantum dot provided in an embodiment of the present application;

[0035] Figure 6 A schematic diagram of the structure of a first display module provided in an embodiment of the present application;

[0036] Figure 7 for Figure 6 The circuit diagram of the module is shown in the figure;

[0037] Figure 8 for Figure 6 The manufacturing process flow chart of the display module is shown;

[0038] Fig. 9 , Fig.10 , Fig.11 , Fig.12 Execute Figure 8 Schematic diagram of product structure after each step;

[0039] Fig.13 For the first Figure 8 The decomposition flow chart of step S102;

[0040] Fig.14 , Fig.15 Execute Fig.13 Schematic diagram of product structure after each step;

[0041] Fig.16 A schematic structural diagram of an anodized aluminum mask plate provided in an embodiment of the present application;

[0042] Fig.17 For the second Figure 8 The decomposition flow chart of step S102;

[0043] Fig.18 , Fig.19 , respectively, for execution Fig.17 Schematic diagram of product structure after each step;

[0044] Fig. 20 For the third Figure 8 The decomposition flow chart of step S102;

[0045] Fig.21 For the fourth Figure 8The decomposition flow chart of step S102;

[0046] Fig. 22 A schematic diagram of the arrangement of light-emitting sub-pixels of another display module provided in an embodiment of the present application;

[0047] Fig.23 A schematic diagram of the structure of a second display module provided in an embodiment of the present application;

[0048] Fig.24 for Fig.23 The manufacturing process flow chart of the display module is shown;

[0049] Fig.25 , Fig.26 Execute Fig.24 Schematic diagram of product structure after each step;

[0050] Fig. 27 A schematic diagram of the structure of a third display module provided in an embodiment of the present application;

[0051] Fig.28 for Fig. 27 The manufacturing process flow chart of the display module is shown;

[0052] Fig.29 , Fig.30 Execute Fig.28 Schematic diagram of product structure after each step;

[0053] Fig.31 A schematic diagram of the structure of a fourth display module provided in an embodiment of the present application;

[0054] Fig.32 for Fig.31 The manufacturing process flow chart of the display module is shown;

[0055] Fig.33 Execute Fig.32 Schematic diagram of product structure after each step;

[0056] Fig.34 A schematic diagram of the structure of a fifth display module provided in an embodiment of the present application;

[0057] Fig.35 for Fig.34 The manufacturing process flow chart of the display module is shown;

[0058] Fig.36 For execution Fig.35 Schematic diagram of product structure after each step;

[0059] Fig.37 A schematic diagram of the structure of a sixth display module provided in an embodiment of the present application;

[0060] Fig.38 for Fig.37 A manufacturing process flow chart of the display module is shown;

[0061] Fig.39 , Fig.40 , Fig.41 , Fig.42 , Fig.43 , Fig.44 For execution Fig.38 Schematic diagram of product structure after each step;

[0062] Fig.45 for Fig.37 Another process flow chart for preparing the display module is shown.

[0063] Fig.46 , Fig.47 , Fig.48 , Fig.49 , Fig.50 , Fig.51 For execution Fig.38 Schematic diagram of product structure after each step;

[0064] Fig.52 A schematic diagram of the structure of a seventh display module provided in an embodiment of the present application;

[0065] Fig.53 for Fig.52 A manufacturing process flow chart of the display module is shown;

[0066] Fig.54 A schematic diagram of the structure of an eighth display module provided in an embodiment of the present application;

[0067] Fig.55 for Fig.54 The figure shows a process flow chart of a preparation process of a display module. DETAILED DESCRIPTION

[0068] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings.

[0069] In the following, the terms "first", "second", etc. are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0070] In addition, in the present application, directional terms such as "upper" and "lower" are defined relative to the orientation of the components in the drawings. It should be understood that these directional terms are relative concepts. They are used for relative description and clarification, and they can change accordingly according to the changes in the orientation of the components in the drawings.

[0071] Some embodiments of the present application provide a Figure 1 The electronic device 1 shown in the figure. The electronic device 1 can be a virtual reality terminal device, an augmented reality terminal device, etc. In other embodiments, the electronic device 1 can also be a mobile phone, a tablet computer, a notebook, a personal digital assistant (PDA), a car computer, a smart wearable product (for example, a smart watch, a smart bracelet, smart glasses). The embodiment of the present application does not impose any special restrictions on the specific form of the above-mentioned terminal. For the convenience of illustration, the following takes the above-mentioned electronic device 1 as an example. Figure 1 Take the virtual reality terminal device shown as an example.

[0072] like Figure 1 As shown, the electronic device 1 may include a display module 10, a processor (not shown) and a housing 12. The processor is electrically connected to the display module 10. The processor is used to control the display module 10 to display an image. The housing 12 is used to protect the display module 10 and the processor.

[0073] The structure of the display module 10 is described below:

[0074] In some embodiments of the present application, Figure 2 As shown, the display module 10 may include a substrate 101 and a plurality of light-emitting pixels p disposed on the substrate 101 .

[0075] In order to enable the display module 10 to realize color display, in some embodiments of the present application, Figure 2 As shown, each luminous pixel p includes at least three luminous sub-pixels 102a for displaying three primary colors. The three primary colors can be red (red, R) light, green (green, G) light, and blue (blue, B) light. For example, each luminous pixel p includes a red luminous sub-pixel R for emitting red light, a green luminous sub-pixel G for emitting green light, and a blue luminous sub-pixel B for emitting blue light.

[0076] like Figure 2 As shown, the red light-emitting sub-pixel R, the green light-emitting sub-pixel G, and the blue light-emitting sub-pixel B in the same light-emitting pixel p can be sequentially arranged in the same row along the X-axis direction.

[0077] In some embodiments, the arrangement of the R, G, and B primary color light-emitting sub-pixels 102a can be determined according to the display effect, pixel density (pixels per inch (PPI)) and resolution and other parameters, which are not limited in this application. For example, the arrangement of the pixels of the display module 10 can also be a Pentile pixel arrangement (also called a P arrangement), a Delta pixel arrangement (also called a D arrangement), and a diamond arrangement.

[0078] In other embodiments, the display module 10 may be Figure 3 The display module 10 may include a substrate 101 and a plurality of light-emitting sub-pixels 102a disposed on the substrate 101. The plurality of light-emitting sub-pixels 102a are, for example, all red light-emitting sub-pixels R.

[0079] The colors and arrangement of the light-emitting sub-pixels 102a illustrated in this application are for illustration only and are not intended to be limiting.

[0080] The following combination Figure 4 The stacking arrangement of the driving backplane 103 and the quantum dot light emitting diode QLED device 102 in the display module 10 is described. Figure 4 As shown, the display module 10 comprises: a substrate 101 stacked along the z direction, a driving backplane 103 and a QLED device 102. The QLED device 102 is electrically connected to the driving backplane 103, and the driving backplane 103 is used to control the QLED device 102 to display.

[0081] In some embodiments, the driving backplane 103 and the QLED device 102 may serve as a light-emitting sub-pixel 102a.

[0082] In some embodiments, the substrate 101 may be a transparent glass substrate, or a hard or flexible substrate made of a transparent resin material. Based on this, a TFT (Thin Film Transistor) may be manufactured on the substrate 101, and the driving backplane 103 may be a TFT backplane.

[0083] Alternatively, a driving circuit may be directly formed on the substrate through a patterning process. In this case, the driving circuit is a pixel circuit.

[0084] For example, in a possible embodiment, the driving backplane 103 includes a capacitor, a plurality of switching transistors, and a driving circuit.

[0085] In another possible embodiment, the driving backplane 103 includes a capacitor, a switching transistor, and a driving transistor.

[0086] In other embodiments, the driving backplane 103 may also be other structures, such as a silicon-based complementary metal oxide semiconductor (CMOS) driving circuit, which is not limited in the embodiments of the present application.

[0087] Next reference Figure 4 The QLED device 102 is disposed on a side of the driving backplane 103 away from the substrate 101. The QLED device 102 includes an anode conductive layer 1021, an electroluminescent material layer (EML) 1022, and a cathode conductive layer 1023 which are sequentially disposed in a direction away from the substrate 101.

[0088] In order to enable the driving backplane 103 to control the QLED device to emit light, Figure 3 As shown, the anode conductive layer 1021 and the cathode conductive layer 1023 are electrically connected to the driving backplane 103, and the driving backplane 103 can apply voltage to the anode conductive layer 1021 and the cathode conductive layer 1023 to drive the QLED device to emit light.

[0089] Therefore, when the driving backplane 103 in the display module 10 provides voltage to the anode conductive layer 1021 and the cathode conductive layer 1023 in each QLED device, the light-emitting layer 1022 emits light.

[0090] The light-emitting layer 1022 includes: light-emitting materials 1022a. The light-emitting materials 1022a have a columnar structure and are arranged in an array. The columnar light-emitting materials 1022a correspond one-to-one to the above-mentioned light-emitting sub-pixels 102a.

[0091] In some embodiments, gaps are provided between adjacent columnar luminescent materials 1022a.

[0092] In some other implementations, vertically and horizontally intersecting barrier walls 1022b are disposed between adjacent columnar light emitting materials 1022a.

[0093] To improve the brightness of the display module, in some embodiments, the light-emitting material 1022a may be a quantum dot (QD) material. The quantum dot material may include a core-shell structure or alloy structure composed of at least one of CdSe (cadmium selenide), CdS (cadmium sulfide), ZnSe (zinc selenide), ZnS (zinc sulfide), InP (indium phosphide), CdTe (cadmium telluride) and ZnTe (zinc telluride). Alternatively, the quantum dot material may also be a core-shell structure and alloy structure composed of at least one of the above materials. For example, the quantum dot material of the core-shell structure may include at least one core-shell quantum dot of CdSe / CdS, CdSe / ZnSe, CdS / ZnS, InP / ZnSe, InP / ZnSe / ZnS, ZnSe / ZnS, CdSe / ZnSe / ZnS, CdSe / CdS / ZnS, and InP / GaP. As another example, the quantum dot material of the alloy structure may include at least one alloy quantum dot of ZnCdSe / ZnSe, CdSeS, ZnCdS, and ZnCdSe / ZnS.

[0094] The structure of the quantum dots can be as follows: Figure 5 The three-dimensional quantum dot shown in (a) may be Figure 5 The two-dimensional quantum sheet shown in (b) in FIG. 1 , or it can be as shown in FIG. Figure 5 The one-dimensional quantum rod shown in (c) in FIG. The present application does not limit the structure of the quantum dot. The light angle of the QLED device can be further reduced to improve the performance of the near-eye display device.

[0095] In some embodiments, the light emitting layer can be formed by inkjet printing, photolithography or transfer.

[0096] However, near-eye display devices have high requirements for pixel resolution and brightness. It is difficult to achieve micron-level and sub-micron-level luminous sub-pixels by inkjet printing, photolithography or transfer, and cannot meet the application requirements of ultra-high pixel density of near-eye display devices.

[0097] To this end, the embodiments of the present application provide an improved display module and preparation process to achieve the miniaturization of the light-emitting sub-pixels of QLED.

[0098] Figure 6 This is a schematic diagram of the structure of a display module provided in an embodiment of the present application. Figure 6As shown, the display module includes: a substrate 101, and a plurality of light-emitting sub-pixels 102a arranged on the substrate 101, and the plurality of light-emitting sub-pixels 102a include: a driving backplane 103, a first electrode layer 1021, an insulating mask plate 1022c, a light-emitting layer 1022, and a second electrode layer 1023, and the second electrode layer 1023 and the first electrode layer 1021 are both electrically connected to the driving backplane 103. The driving backplane 103, the first electrode layer 1021, the insulating mask plate 1022c, and the second electrode layer 1023 are stacked along the z direction.

[0099] In some embodiments, the substrate 101 may be a transparent glass substrate, or a hard or flexible substrate made of a transparent resin material. A TFT (Thin Film Transistor) may be fabricated on the substrate 101, and the driving backplane 103 may be a TFT backplane. In this case, a plurality of TFTs may be connected to form a pixel circuit.

[0100] Alternatively, the material constituting the substrate 101 may be silicon. In this case, the driving circuit may be directly formed on the silicon substrate through a patterning process.

[0101] The present application does not limit the materials of the anode conductive layer 1021 and the cathode conductive layer 1023, and it is only necessary that the materials of the anode conductive layer 1021 and the cathode conductive layer 1023 are both conductive materials. In some embodiments, the first electrode layer 1021 can be an anode conductive layer, and the second electrode layer 1023 can be a cathode conductive layer. The materials of the anode conductive layer include: indium tin oxide (ITO), silver Ag, etc.

[0102] The materials of the cathode conductive layer include: aluminum Al, silver Ag, magnesium-silver alloy Mg:Ag, etc.

[0103] In some embodiments, the insulating mask plate 1022c is provided with a plurality of pixelated through holes, and the light-emitting layer 1022 includes: a light-emitting material 1022a, wherein the light-emitting material 1022a is respectively arranged in the plurality of pixelated through holes, and the plurality of pixelated through holes corresponds one-to-one to the plurality of light-emitting sub-pixels 102a.

[0104] In some embodiments, the material of the light emitting material 1022a includes: quantum dot material.

[0105] The aperture r of the pixelated through hole is from tens of nanometers to tens of micrometers, for example, 20 nm-5 μm.

[0106] In some embodiments, the depth h of the pixelated through-hole is 10 nm-1000 nm.

[0107] In some embodiments, the pixel pitch r+t is 10 nm-5 um, where t is the spacing between adjacent pixelated through holes.

[0108] Therefore, the size of the pixelated through hole is in the nanometer-micrometer level, achieving micrometer-level and submicrometer-level pixel density.

[0109] like Figure 6 As shown, the aperture sizes of the pixelated through holes are consistent and the distribution is highly ordered, which is beneficial to the research and synthesis of nanomaterials and nanodevices.

[0110] In some embodiments, the insulating mask plate is an anodized aluminum oxide (AAO) mask plate.

[0111] Among them, the nanopores of the anodized aluminum mask are neatly and densely arranged, highly ordered, perpendicular to the surface of the mask and penetrate the mask. There is no cross-over between the holes, the pore diameter ranges from 20nm-5μm, and the depth is about 10nm-1000nm.

[0112] In some embodiments, by adjusting the thickness and aperture of the anodized aluminum mask, the size of the light-emitting sub-pixel, the pixel density per inch, and the thickness of the light-emitting layer device can be adjusted.

[0113] In some embodiments, the surface of the anodized aluminum mask plate can be modified or subjected to high-temperature annealing treatment, or the inner wall surface can be modified to form a protective layer 1022d on the inner wall of the plurality of pixelated through holes of the anodized aluminum mask plate, thereby reducing damage to the light-emitting layer 1022 caused by the anodized aluminum mask plate.

[0114] In other embodiments, the insulating mask is formed by photolithography and etching of a dielectric film.

[0115] By way of example, the material of the dielectric film includes: silicon dioxide SiO2, silicon nitride SiNx, titanium dioxide TiO2, hafnium dioxide HfO2, silazane polymer SiCN, zinc sulfide ZnS, silicon oxynitride SiON.

[0116] Therefore, in the display module provided by the embodiment of the present application, an insulating mask plate 1022c is provided in the light-emitting layer 1022, and the insulating mask plate 1022c includes a plurality of pixelated through holes, the size of the holes is micron-level and submicron-level, and the quantum dot material is filled in the plurality of pixelated through holes to achieve nanometer to micron-level pixelated display and achieve the pixel density required by the near-eye display device. The light-emitting layer 1022 adopts a porous structure, which can protect the quantum dots, is conducive to heat dissipation, and has better water and oxygen isolation performance.

[0117] In addition, if Figure 7As shown, the insulating mask plate 1022c uses insulating material to separate the luminescent material 1022a, which can suppress leakage current in the non-luminescent areas of the first electrode layer 1021 and the second electrode layer 1023, so that the current can only pass through the luminescent material 1022a, thereby improving the safety and working efficiency of the display module.

[0118] Figure 8 The following is a flow chart of the method for preparing the display module provided in the embodiment of the present application. Figure 8 The manufacturing method of the display module is described. The manufacturing method comprises the following steps:

[0119] S101. Fig. 9 As shown, a first electrode layer 1021 is formed on a side of the driving backplane 103 away from the substrate.

[0120] In some embodiments, the first electrode layer 1021 may be an anode conductive layer.

[0121] S102. Fig.10 As shown, an insulating mask plate is disposed on a side of the first electrode layer 1021 away from the driving backplane 103 .

[0122] The insulating mask plate includes a plurality of pixelated through holes, the aperture of the plurality of pixelated through holes is 10nm-5um, the pixel pitch is 10nm-5um, and the hole depth is 10nm-1000nm.

[0123] In step S102, an insulating mask plate including a plurality of pixelated through holes is disposed on a side of the first electrode layer 1021 away from the driving backplane 103, including:

[0124] In some embodiments, the insulating mask plate including the plurality of pixelated through holes may be prepared on a side of the first electrode layer 1021 away from the driving backplane 103 .

[0125] In other embodiments, the insulating mask plate including the multiple pixelated through holes may be prepared first, and then the insulating mask plate including the multiple pixelated through holes may be disposed on a side of the first electrode layer 1021 of the display module away from the driving backplane 103 .

[0126] The material of the insulating mask plate is not limited in the embodiment of the present application. In some embodiments, the insulating mask plate including a plurality of periodic holes is an anodized aluminum mask plate.

[0127] In other embodiments, the insulating mask including the plurality of periodic holes is formed by photolithography and etching of a dielectric film.

[0128] S103. Fig.11As shown, the light-emitting material is injected into the multiple pixelated through holes of the insulating mask plate 1022c to obtain a light-emitting layer.

[0129] In some embodiments, the light-emitting material is a quantum dot material, which includes but is not limited to: a core-shell structure or alloy structure composed of at least one of CdSe (cadmium selenide), CdS (cadmium sulfide), ZnSe (zinc selenide), ZnS (zinc sulfide), InP (indium phosphide), CdTe (cadmium telluride), ZnTe (zinc telluride) and AgInGaS (silver indium gallium sulfide). Alternatively, the quantum dot material may also be a core-shell structure and alloy structure composed of at least one of the above materials.

[0130] By way of example, the core-shell structured quantum dot materials may include at least one core-shell quantum dot of CdSe / CdS, CdSe / ZnSe, CdS / ZnS, InP / ZnSe, InP / ZnSe / ZnS, ZnSe / ZnS, CdSe / ZnSe / ZnS, CdSe / CdS / ZnS, and InP / GaP.

[0131] As another example, the quantum dot material of the alloy structure may include at least one alloy quantum dot of ZnCdSe / ZnSe, CdSeS, ZnCdS, ZnCdSe / ZnS, and AgInGaS / ZnS.

[0132] In some embodiments, the quantum dot structure includes three-dimensional quantum dots, two-dimensional quantum sheets, or one-dimensional quantum rods. The light angle of the QLED device can be further reduced to improve the performance of the near-eye display device.

[0133] In some embodiments, the light-emitting material may be injected into the plurality of pixelated through holes of the insulating mask plate by inkjet printing, spin coating, drop coating, quantum dot photoresist (QD-PR) lithography and electrochemical deposition of the light-emitting layer 1022 .

[0134] Among them, the spin coating process can efficiently and conveniently realize the preparation of monochromatic light-emitting devices.

[0135] S104. Fig.12 As shown, a second electrode layer 1023 is disposed on a side of the light emitting layer 1022 away from the driving backplane 103 .

[0136] In some embodiments, the second electrode layer 1023 is a cathode conductive layer.

[0137] In some embodiments, the material of the insulating mask plate is, for example, anodized aluminum, and the insulating mask plate is, for example, formed on the first electrode layer 1021. Fig.13 As shown, step S102 includes:

[0138] S1021. Fig.14 As shown, an aluminum film 1020a is formed on the first electrode layer 1021.

[0139] Among them, the aluminum film 1020a can be grown on the anode conductive layer by low-temperature thin film processes such as electron beam evaporation (Ebeam), magnetron sputtering, and thermal evaporation, and the thickness of the subsequent periodic porous anodized aluminum mask plate can be controlled by the film thickness.

[0140] S1022. Fig.15 As shown, the aluminum film 1020a is corroded by an anodic electrochemical oxidation process in an acidic solution to form an anodized aluminum mask.

[0141] Wherein, the anodized aluminum mask plate includes a plurality of pixelated through holes.

[0142] In some embodiments, the acidic solution may be oxalic acid, phosphoric acid, or the like.

[0143] In some embodiments, by adjusting the electrochemical oxidation process parameters, for example, by adjusting the aperture, depth, and density of the pixelated through-holes, the size, thickness, and density of the light-emitting sub-pixels can be controlled accordingly.

[0144] In some embodiments, the first electrode layer may be subjected to a high-temperature annealing treatment before the acidic reaction to prevent the acidic solution from corroding the first electrode layer.

[0145] In some embodiments, Fig.16 As shown, the anodized aluminum mask plate can also be surface modified or subjected to high-temperature annealing treatment to form a protective layer 1022d on the inner side walls of the multiple pixelated through holes of the anodized aluminum mask plate, or the inner side wall surface can be modified to perform surface modification to reduce the damage of the anodized aluminum mask plate to the light-emitting layer 1022.

[0146] In other embodiments, the material of the insulating mask plate is, for example, anodized aluminum. The insulating mask plate can be formed first and then disposed on the first electrode layer 1021. Fig.17 As shown, step S102 includes:

[0147] S1023. Fig.18 As shown, the aluminum film 1020a is corroded by an anodic electrochemical oxidation process in an acidic solution to form an anodized aluminum mask.

[0148] The anodized aluminum mask plate includes a plurality of pixelated through holes.

[0149] S1024. Fig.19 As shown, the anodized aluminum mask is transferred onto the first electrode layer 1021 .

[0150] In other embodiments, in addition to the above-mentioned electrochemical processing, the photolithography-etching process can also be combined to realize the preparation of a pixel porous medium template with high PPI and ultra-small pixels. The insulating mask plate is, for example, a dielectric mask plate, which is, for example, formed on the first electrode layer 1021. At this time, Fig. 20 As shown, step S102 includes:

[0151] S1025 . Form a dielectric film on the first electrode layer 1021 .

[0152] For example, the material of the dielectric film includes: silicon dioxide, silicon nitride, titanium dioxide, hafnium dioxide, silazane polymer, zinc sulfide, silicon oxynitride.

[0153] In some embodiments, a dielectric film may be deposited on the first dielectric layer.

[0154] S1026. Perform photolithography and etching on the dielectric film to form a dielectric mask.

[0155] Wherein, the dielectric mask plate includes a plurality of pixelated through holes.

[0156] In this embodiment, there is no need to rely on the electrochemical oxidation reaction of the Al film, which avoids the complicated electrochemical process control steps, and combines with micro-nano processing technologies such as photolithography-etching, so that the pixel arrangement and shape formed are more diverse and controllable.

[0157] Among them, the photolithography process refers to a process of forming patterns using photoresist, mask template, exposure machine, etc., including film formation, exposure, development and other processes.

[0158] The etching process includes: an inductively coupled plasma (ICP) etching process and a wet etching process.

[0159] The ICP etching process refers to etching the dielectric film by generating low-temperature plasma through an ICP source.

[0160] The wet etching process refers to the technology of immersing the etching material in the etching solution for etching.

[0161] The product structure obtained by executing steps S1025 and S1026 can be referred to Fig.14 , Fig.15 , wherein the structure of the dielectric film may refer to the above-mentioned aluminum film 1020a, and the structure of the dielectric mask plate may refer to the structure of the above-mentioned anodized aluminum mask plate.

[0162] In other embodiments, the insulating mask plate is, for example, a dielectric mask plate, which may be formed first and then disposed on the first electrode layer 1021. Fig.21As shown, step S102 includes:

[0163] S1027. Perform photolithography and etching on the dielectric film to form a dielectric mask.

[0164] Wherein, the dielectric mask plate includes a plurality of pixelated through holes.

[0165] S1028 . Transfer the dielectric mask onto the first electrode layer 1021 .

[0166] The product structure obtained by executing steps S1027 and S1028 can be referred to Fig.18 , Fig.19 , wherein the structure of the dielectric film may refer to the above-mentioned aluminum film 1020a, and the structure of the dielectric mask plate may refer to the structure of the above-mentioned anodized aluminum mask plate.

[0167] In some embodiments, the display module includes: a plurality of pixel regions, each pixel region includes at least three adjacent light-emitting sub-pixels for displaying three primary colors. In order to prepare a full-color quantum dot display module including red, green and blue light-emitting sub-pixels, red light quantum dots, green light quantum dots and blue light quantum dots can be processed separately by inkjet printing, photolithography and other processes to form an RGB three-color pixel integration. In step S103, the light-emitting material is injected into the plurality of pixelated through holes of the insulating mask plate, including:

[0168] S1031. Fig. 22 As shown, the light-emitting material of different colors is injected into the plurality of pixelated through holes of the insulating mask plate in different regions.

[0169] A light-emitting layer 1022 including the light-emitting material 1022a can be obtained.

[0170] For example, see Fig. 22 The insulating mask plate can be divided into three areas: a first area S1, a second area S2 and a third area S3. In some embodiments, a red light emitting material can be injected into the multiple pixelated through holes of the first area S1, a green light emitting material can be injected into the multiple pixelated through holes of the second area S2, and a blue light emitting material can be injected into the multiple pixelated through holes of the third area S3.

[0171] In other embodiments, Figure 3 As shown, the luminescent material 1022a is, for example, a red luminescent material R. In order to prepare a display module of a monochromatic luminescent sub-pixel, the red luminescent material can be injected into a plurality of pixelated through holes of the insulating mask plate by a spin coating process or the like. The spin coating process can efficiently and conveniently realize the preparation of a monochromatic luminescent sub-pixel.

[0172] In some embodiments, after the quantum dot filling process is completed, an insulating transparent mask may be filled in the insulating mask plate.

[0173] In some embodiments, after the insulating transparent mask is filled in the insulating mask plate, the pixel layer may be planarized by a touch CMP or Scratch process.

[0174] In some embodiments, Fig.23 , Fig. 27 As shown, the display module further includes: a hole injection layer 104 and a hole transport layer (HTL) 105. The hole injection layer 104 and the hole transport layer 105 are located between the first electrode layer 1021 and the light emitting layer 1022.

[0175] The hole injection layer 104 is disposed closer to the first electrode layer 1021 , and the hole transport layer 105 is located between the hole injection layer 104 and the light emitting layer 1022 .

[0176] In some embodiments, Fig.23 As shown, the hole injection layer 104 and the hole transport layer 105 may be disposed in a plurality of pixelated through holes of the insulating mask plate 1022c.

[0177] like Fig.24 As shown, before injecting the light-emitting material into the plurality of pixelated through holes of the insulating mask plate in step S103, the method further includes:

[0178] S1051. Fig.25 As shown, a hole injection layer 104 is formed in a plurality of pixelated through holes of the insulating mask.

[0179] In some embodiments, the hole injection layer 104 may be formed in the plurality of pixelated through holes of the insulating mask by evaporation, spin coating, or inkjet printing.

[0180] S1052. Fig.26 As shown, a hole transport layer 105 is formed in a plurality of pixelated through holes of the insulating mask.

[0181] In some embodiments, the hole transport layer 105 may be formed in the plurality of pixelated through holes of the insulating mask by evaporation, spin coating, or inkjet printing.

[0182] In other embodiments, Fig. 27 As shown, the hole injection layer 104 and the hole transport layer 105 may be sequentially stacked on the surface of the first electrode layer 1021 .

[0183] like Fig.28As shown, before step S102 of disposing an insulating mask plate on a side of the first electrode layer 1021 away from the driving backplane 103, the method further includes:

[0184] S1053. Fig.29 As shown, a hole injection layer 104 is formed on the first electrode layer 1021 .

[0185] In some embodiments, the hole injection layer 104 may be formed on the first electrode layer 1021 by evaporation or spin coating.

[0186] S1054. Fig.30 As shown, a hole transport layer 105 is formed on the hole injection layer 104 .

[0187] In some embodiments, the hole transport layer 105 may be formed on the hole injection layer 104 by evaporation or spin coating.

[0188] In other embodiments, the hole injection layer 104 may be disposed on the surface of the first electrode layer 1021, and the hole transport layer 105 may be disposed in a plurality of pixelated through holes of the insulating mask plate. The preparation process thereof may refer to step S1053 and step S1052 respectively, and will not be described in detail here.

[0189] In some other embodiments, the display module further includes an electron barrier layer (EBL), which is located between the hole transport layer 105 and the light emitting layer 1022 .

[0190] In some embodiments, the electron blocking layer may be a pixelated structure formed in a plurality of pixelated through holes of the insulating mask.

[0191] In other embodiments, the electron blocking layer may be a whole layer structure disposed on the surface of the hole transport layer 105 .

[0192] In some embodiments, Fig.31 As shown, the display module further includes an electron transport layer (ETL) 106. The quantum dot material is usually an n-type semiconductor, which has a high electron mobility, and an electron injection layer (EIL) may not be provided to assist electron transport.

[0193] When an operating voltage is applied to the first electrode layer and the second electrode layer, the holes in the first electrode layer and the electrons in the second electrode layer are injected into the light-emitting layer 1022. The holes and the electrons meet in the light-emitting layer 1022, and the two are combined to form electron-hole pairs and release energy. The energy is emitted in the form of light, and is displayed as light of different colors after passing through different photons in the light-emitting layer 1022, and is emitted evenly from both sides of the light-emitting layer 1022.

[0194] In some embodiments, both the electron transport layer 106 and the second electrode layer 1023 may be disposed in a plurality of pixelated through holes of an insulating mask.

[0195] like Fig.32 As shown, before step S104 of disposing a second electrode layer 1023 on a side of the light emitting layer 1022 away from the driving backplane 103, the method further includes:

[0196] S1061. Fig.33 As shown, an electron transport layer 106 is formed in a plurality of pixelated through holes of the insulating mask.

[0197] In some embodiments, the electron transport layer 106 may be processed in a plurality of pixelated through holes of an insulating mask plate by evaporation, spin coating, or inkjet printing, so that the electron transport layer 106 is formed on the light-emitting layer 1022 .

[0198] At this time, in step S104, the second electrode layer 1023 is provided on the side of the light emitting layer 1022 away from the driving backplane 103, which can be:

[0199] S1041. A second electrode layer 1023 is formed in the plurality of pixelated through holes of the insulating mask plate to obtain Fig.31 The display module shown.

[0200] In some embodiments, a cathode thin film metal electrode such as Al, Ag or magnesium-silver alloy Mg:Ag can be formed on the electron transport layer 106 by electron beam evaporation (Ebeam), thermal evaporation or other metal thin film processes to complete the preparation of the quantum dot light emitting diode display device.

[0201] In other embodiments, Fig.34 As shown, the electron transport layer 106 and the second electrode layer 1023 can be stacked in sequence on the insulating mask plate.

[0202] like Fig.35 As shown, in step S104, a second electrode layer 1023 is provided on a side of the light emitting layer 1022 away from the driving backplane 103, including:

[0203] S1062. Fig.36As shown, an electron transport layer 106 is formed on the insulating mask.

[0204] In some embodiments, the electron transport layer 106 may be processed by evaporation, spin coating, or inkjet printing, so that the electron transport layer 106 is formed on an insulating mask plate.

[0205] At this time, in step S104, the second electrode layer 1023 is provided on the side of the light emitting layer 1022 away from the driving backplane 103, which can be:

[0206] S1042. Form a second electrode layer 1023 on the electron transport layer 106 to obtain Fig.34 The display module shown.

[0207] In some embodiments, a cathode thin film metal electrode such as Al, Ag or magnesium-silver alloy Mg:Ag can be formed on the electron transport layer 106 by electron beam evaporation (Ebeam), thermal evaporation or other metal thin film processes to complete the preparation of the quantum dot light emitting diode display device.

[0208] In other embodiments, the electron transport layer 106 may also be disposed in a plurality of pixelated through holes of the insulating mask plate, and the second electrode layer 1023 may be disposed on the surface of the insulating mask plate.

[0209] In some other embodiments, the display module further includes a hole barrier layer (HBL), which is located between the electron transport layer 106 and the light emitting layer 1022 .

[0210] In some embodiments, the hole blocking layer may be a pixelated structure formed in a plurality of pixelated through holes of the insulating mask plate. The preparation process thereof may refer to the above embodiment and will not be described in detail here.

[0211] In other embodiments, the hole blocking layer may be a whole layer structure disposed on the surface of the hole transport layer 105. The preparation process thereof may refer to the above embodiment and will not be described in detail here.

[0212] In addition, in some embodiments of the present application, the light emitting diode device in the display module can be packaged and then processed through a micro lens process to improve the device performance. The micro lenses correspond to the pixel steps one by one.

[0213] In other embodiments of the present application, in order to further reduce the crosstalk between light-emitting sub-pixels, the embodiments of the present application further provide a display module.

[0214] like Fig.37As shown, the display module includes: a substrate 101, and a plurality of light-emitting sub-pixels 102a arranged on the substrate 101, and the plurality of light-emitting sub-pixels 102a include: a driving backplane 103, a first electrode layer 1021, a light-emitting layer 1022, a dielectric film 1020b, an aluminum film 1020a, a plurality of anodized aluminum mask plates 1022c0 and a second electrode layer 1023.

[0215] The driving backplane 103 , the first electrode layer 1021 , the aluminum film 1020 a , the dielectric film 1020 b and the second electrode layer 1023 are stacked along the z direction. The second electrode layer 1023 and the first electrode layer 1021 are both electrically connected to the driving backplane 103 .

[0216] Multiple anodized aluminum mask plates 1022c0 are located in the aluminum film 1020a. Multiple pixelated through holes 1020 are provided on the dielectric film 1020b. The multiple anodized aluminum mask plates 1022c0 correspond to the multiple pixelated through holes 1020 one by one, and the multiple pixelated through holes 1020 correspond to the multiple light-emitting sub-pixels 102a one by one.

[0217] The anodized aluminum mask plate 1022c0 includes a plurality of through holes, and the light-emitting layer 1022 includes a light-emitting material 1022a, and the light-emitting material 1022a is located in the plurality of through holes.

[0218] Compared with the above-mentioned display module, the display module provided in this embodiment has a dielectric film 1020b disposed on the insulating mask plate 1022c, and an anodized aluminum mask plate 1022c0 can be formed only at the position of the pixelated through hole 1020 of the dielectric film 1020b, and the aluminum film 1020a structure is retained at other positions as a metal retaining wall, which can reduce pixel crosstalk and optimize the light output shape. In addition, the formed light-emitting layer 1022 adopts a porous structure, which can protect quantum dots, is conducive to heat dissipation, and has better water and oxygen isolation performance.

[0219] In addition, columnar quantum dot filling materials with quantum dots of micron and nanometer sizes are formed in the anodized aluminum mask plate 1022c0. Under the action of the protective layer 1022d formed by the aluminum film 1020a, the high-reflection interface of the aluminum metal can form a reflective cup structure. The interface of the aluminum film 1020a can form a light shape optimization effect similar to that of an optical fiber, optimize the light shape, and narrow the light shape, which is beneficial to the coupling of the quantum dot light-emitting device and the waveguide module, increase the light output efficiency of the overall system, reduce power consumption, and improve the performance of near-eye display devices such as AR / VR.

[0220] Fig.38 The following is a flow chart of the method for preparing the display module provided in the embodiment of the present application. Fig.38 The manufacturing method of the display module is described. The manufacturing method comprises the following steps:

[0221] S201. Fig.39 As shown, a first electrode layer 1021 is formed on a side of the driving backplane 103 away from the substrate 101 .

[0222] In some embodiments, the first electrode layer 1021 may be an anode conductive layer.

[0223] S202. Fig.40 As shown, an aluminum film 1020 a is formed on a side of the first electrode layer 1021 away from the driving backplane 103 .

[0224] Among them, the aluminum film 1020a can be grown on the anode conductive layer by low-temperature thin film processes such as electron beam evaporation (Ebeam), magnetron sputtering, and thermal evaporation, and the thickness of the subsequent periodic porous anodized aluminum mask plate 1022c0 can be controlled by the film thickness.

[0225] S203. Fig.41 As shown, a dielectric film 1020b is formed on the aluminum film 1020a.

[0226] In some embodiments, the material of the dielectric film 1020 b includes silicon dioxide, silicon nitride, titanium dioxide, hafnium dioxide, silazane polymer, zinc sulfide, and silicon oxynitride.

[0227] S204. Fig.42 As shown, the dielectric film 1020 b is subjected to selective photolithography and etching to form a plurality of pixelated through holes 1020 arranged in an array. The plurality of pixelated through holes 1020 penetrate the dielectric film 1020 b.

[0228] Among them, the photolithography process refers to a process of forming patterns using photoresist, mask template, exposure machine, etc., including film formation, exposure, development and other processes.

[0229] The etching process includes: an inductively coupled plasma (ICP) etching process and a wet etching process.

[0230] The ICP etching process refers to etching the dielectric film 1020b by generating low-temperature plasma through an ICP source.

[0231] The wet etching process refers to the technology of immersing the etching material in the etching solution for etching.

[0232] S205. Fig.43 As shown, the aluminum film 1020a at the plurality of pixelated through holes 1020 is corroded by an anodic electrochemical oxidation process in an acidic solution, and an anodized aluminum mask plate 1022c0 is formed at the plurality of pixelated through holes 1020.

[0233] The anodized aluminum mask plate 1022c0 includes a plurality of pixelated through holes. The plurality of anodized aluminum mask plates correspond to the plurality of pixelated through holes, and the dielectric film corresponds to the aluminum film; the aperture of the plurality of pixelated through holes is 10nm-5um.

[0234] The acidic solution may be oxalic acid, phosphoric acid or the like.

[0235] By adjusting the parameters of the electrochemical oxidation process, for example, by adjusting the aperture, depth, and density of the pixelated through-holes, the size, density, and thickness of the light-emitting sub-pixels can be controlled accordingly.

[0236] S206. Fig.44 As shown, the light-emitting material is injected into the multiple pixelated through holes of the anodized aluminum mask plate 1022c0 through the multiple pixelated through holes 1020.

[0237] In this way, the light-emitting layer 1022 can be obtained.

[0238] The plurality of pixelated through holes 1020 correspond to the plurality of light-emitting sub-pixels 102 a.

[0239] S207. A second electrode layer 1023 is disposed on the side of the light emitting layer 1022 away from the driving backplane 103, so as to obtain Fig.37 The display module shown.

[0240] In some embodiments, the second electrode layer 1023 is a cathode conductive layer.

[0241] In some embodiments, the display module includes: a plurality of pixel regions, each pixel region includes at least three adjacent light-emitting sub-pixels for displaying three primary colors respectively. The step of injecting quantum dots into the plurality of pixelated through holes of the anodized aluminum mask plate 1022c0 through the plurality of pixelated through holes 1020 includes:

[0242] like Fig. 22 As shown, the quantum dots of different colors are injected into the multiple through holes of the anodized aluminum mask plate 1022c0 through the multiple pixelated through holes 1020 in different regions to obtain a light-emitting layer including the multiple light-emitting pixels.

[0243] For example, see Fig. 22 The insulating mask plate can be divided into three areas: a first area S1, a second area S2 and a third area S3. In some embodiments, a red light emitting material can be injected into the multiple pixelated through holes of the first area S1, a green light emitting material can be injected into the multiple pixelated through holes of the second area S2, and a blue light emitting material can be injected into the multiple pixelated through holes of the third area S3.

[0244] In other embodiments, the display module includes: a plurality of pixel regions, each pixel region includes at least three adjacent light-emitting sub-pixels for displaying three primary colors, respectively. Steps S204, S205, and S206 may be repeated multiple times, each time the color of the quantum dots filled into the multiple pixelated through holes of the anodized aluminum mask plate 1022c0 is different, and after repeating the above steps multiple times, a light-emitting layer including the multiple light-emitting pixels is obtained.

[0245] For example, the dielectric film 1020b can be divided into three regions: a red light region S4, a green light region S5, and a blue light region S6. Fig.45 As shown, repeating steps S204 to S206 multiple times may include the following steps:

[0246] In the original step S204, the dielectric film 1020b is selectively photolithographically etched to form a plurality of pixelated through holes 1020 arranged in an array. The plurality of pixelated through holes 1020 penetrate the dielectric film 1020b and may be as follows: Fig.45 As shown in S2041 in FIG. 1 , photolithography and etching are performed on the red light region S4 of the dielectric film 1020b to form a plurality of first openings 10201, and the result is as shown in FIG. Fig.46 Products shown.

[0247] In the original step S205, the aluminum film 1020a at the plurality of pixelated through holes 1020 is corroded by an anodic electrochemical oxidation process in an acidic solution to form an anodic aluminum mask plate 1022c0 at the plurality of pixelated through holes 1020. Fig.45 As shown in S2051 in FIG. 1 , the aluminum film 1020a at the plurality of first openings 10201 is corroded by an anodic electrochemical oxidation process in an acidic solution to form a plurality of first anodized aluminum mask plates 1022c01 at the plurality of first openings 10201, and a Fig.46 Products shown.

[0248] In the original step S206, quantum dots are injected into the multiple through holes of the anodized aluminum mask plate 1022c0 through the multiple pixelated through holes 1020. Fig.45 As shown in step S2061 in FIG. 1 , red light quantum dots are injected into a plurality of periodic holes of a plurality of first anodized aluminum mask plates 1022c01. Fig.47 As shown, a plurality of red light-emitting sub-pixels R are obtained. The plurality of first openings 10201 correspond to the plurality of red light-emitting sub-pixels R.

[0249] Next, after adjusting the selection position, perform the following steps again:

[0250] S2042. Fig.48As shown, photolithography and etching are performed on the green light region S5 of the dielectric film 1020 b to form a plurality of second openings 10202 .

[0251] The plurality of second openings 10202 penetrate the dielectric film 1020b.

[0252] S2052. Next reference Fig.48 , the aluminum film 1020a at the plurality of second openings 10202 is corroded by an anodic electrochemical oxidation process in an acidic solution, so as to form a plurality of second anodized aluminum mask plates 1022c02 at the plurality of second openings 10202.

[0253] Among them, the second anodized aluminum mask plate 1022c02 includes a plurality of through holes.

[0254] S2062. Fig.49 As shown, the green light emitting material is injected into the multiple through holes of the multiple second anodized aluminum mask plates 1022c02.

[0255] Thus, a plurality of green light-emitting sub-pixels G are obtained. The plurality of second openings 10202 correspond to the plurality of green light-emitting sub-pixels G.

[0256] Next, adjust the selection position again and follow these steps:

[0257] S2043. Fig.50 As shown, photolithography and etching are performed on the blue light region S6 of the dielectric film 1020 b to form a plurality of third pixelated through holes 10203 .

[0258] The plurality of third pixelated through holes 10203 penetrate the dielectric film 1020b.

[0259] S2053. Next reference Fig.50 , the aluminum film 1020a at the plurality of third pixelated through holes 10203 is corroded by an anodic electrochemical oxidation process in an acidic solution, and a plurality of third anodized aluminum mask plates 1022c03 are formed at the plurality of third pixelated through holes 10203.

[0260] S2063. Fig.51 As shown, the blue light emitting material is injected into the multiple through holes of the multiple third anodized aluminum mask plates 1022c03.

[0261] Thus, a plurality of blue light-emitting sub-pixels B are obtained. The plurality of third pixelized through holes 10203 correspond to the plurality of blue light-emitting sub-pixels B.

[0262] In some embodiments, Fig.52As shown, the display module further includes: a hole injection layer (HIL) 104 and a hole transport layer 105. The hole injection layer 104 and the hole transport layer 105 are located between the first electrode layer 1021 and the light emitting layer 1022.

[0263] The hole injection layer 104 is disposed closer to the first electrode layer 1021 , and the hole transport layer 105 is located between the hole injection layer 104 and the light emitting layer 1022 .

[0264] The present application also provides a method for preparing a display module. Fig.53 As shown, before forming the aluminum film 1020a on the first electrode layer 1021 in step S207, the method further includes:

[0265] S208 . Form a hole injection layer 104 on the first electrode layer 1021 .

[0266] S209 . Form a hole transport layer 105 on the first electrode layer 1021 .

[0267] In some embodiments, Fig.54 As shown, the display module further includes: an electron transport layer 106. The quantum dot material is usually an n-type semiconductor, which has a high electron mobility, and an electron injection layer may not be provided to assist electron transport.

[0268] In some embodiments, the electron transport layer 106 and the second electrode layer 1023 may be disposed in a plurality of through holes of the insulating mask.

[0269] like Fig.55 As shown, before step S104, the method further includes:

[0270] S210. Form an electron transport layer 106 on the dielectric film 1020b.

[0271] In the above embodiment, the display module adopts the light-emitting layer 1022. In other embodiments, the above display module may also adopt an organic light-emitting layer. The preparation process and structure may refer to the embodiments of the present application. These all belong to the protection scope of the present application and will not be repeated here.

[0272] The display module provided by the embodiment of the present application, in some embodiments, includes: a substrate, and a plurality of light-emitting sub-pixels arranged on the substrate; the plurality of light-emitting sub-pixels include: a first electrode layer, an insulating mask plate, a light-emitting layer and a second electrode layer; the first electrode layer, the insulating mask plate and the second electrode layer are stacked in sequence in a direction away from the substrate. The insulating mask plate is provided with a plurality of pixelated through holes, the size of the holes is micron-level and sub-micron-level, and the light-emitting material is filled in the plurality of pixelated through holes, as a light-emitting layer, and the plurality of pixelated through holes and the plurality of light-emitting sub-pixels correspond one to one. Pixelated display from nanometer to micron level is realized, and the pixel density required by the near-eye display device is realized. In addition, the insulating mask plate in the light-emitting layer adopts a porous structure, which can protect quantum dots, is conducive to heat dissipation, and has better water and oxygen isolation performance. In addition, the insulating mask plate adopts an insulating material to separate the plurality of light-emitting materials, which can suppress the leakage current of the non-light-emitting area of ​​the first electrode layer and the second electrode layer, so that the current can only pass through the light-emitting material, thereby improving the safety and working efficiency of the display module.

[0273] In other embodiments, the display module includes: a substrate, and a plurality of light-emitting sub-pixels arranged on the substrate; the plurality of light-emitting sub-pixels include: a first electrode layer, an aluminum film, a dielectric film, a plurality of anodized aluminum mask plates, a light-emitting layer and a second electrode layer, and the first electrode layer, the aluminum film, the dielectric film and the second electrode layer are stacked in sequence in a direction away from the substrate; the plurality of anodized aluminum mask plates are arranged in the aluminum film, the light-emitting layer includes a light-emitting material, the anodized aluminum mask plate includes a plurality of through holes, and the light-emitting materials are respectively arranged in the plurality of through holes; the dielectric film includes a plurality of pixelated through holes, the aperture of the plurality of pixelated through holes is 10nm-5um, the plurality of anodized aluminum mask plates correspond one-to-one to the plurality of pixelated through holes, and the plurality of pixelated through holes correspond one-to-one to the plurality of light-emitting sub-pixels. Compared with the above-mentioned display module, an anodized aluminum insulating mask plate can be formed only at the pixelated through-hole position of the dielectric film, and a columnar quantum dot filling material with a size of micrometer and nanometer quantum dots can be formed in the anodized aluminum insulating mask plate, and the aluminum film structure is retained at other positions. The aluminum film can be used as a metal retaining wall. Under the protective layer formed by the aluminum film, pixel crosstalk can be reduced and the light shape can be optimized. In addition, the high-reflection interface of the aluminum metal can form a reflective cup structure, optimize the light shape, narrow the light shape, and facilitate the coupling of the quantum dot light-emitting device and the waveguide module, increase the light output efficiency of the overall system, reduce power consumption, and improve the performance of the near-eye display device.

[0274] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A display module, characterized in that: include: A substrate, and a plurality of light-emitting sub-pixels disposed on the substrate; The plurality of light-emitting sub-pixels include: a first electrode layer, an insulating mask plate, a light-emitting layer, and a second electrode layer; The first electrode layer, the insulating mask plate and the second electrode layer are stacked in sequence in a direction away from the substrate; The light-emitting layer includes a light-emitting material, the insulating mask includes a plurality of pixelated through holes, and the light-emitting materials are respectively arranged in the plurality of pixelated through holes; the plurality of pixelated through holes correspond one-to-one to the plurality of light-emitting sub-pixels; The apertures of the plurality of pixelated through holes are in the range of 10 nm to 5 um.

2. The display module according to claim 1, characterized in that: The insulating mask plate is an anodized aluminum mask plate or a dielectric mask plate.

3. The display module according to claim 2, characterized in that: The anodized aluminum mask plate is formed by corroding an aluminum film in an acidic solution through an anodic electrochemical oxidation process.

4. The display module according to claim 2, characterized in that: The dielectric mask is formed by photolithography and etching of a dielectric film.

5. The display module according to claim 4, characterized in that: The material of the dielectric film includes: silicon dioxide, silicon nitride, titanium dioxide, hafnium dioxide, silazane polymer, zinc sulfide, silicon oxynitride.

6. The display module according to any one of claims 1 to 5, characterized in that: The display module comprises: a plurality of pixel regions, each pixel region comprising at least three light-emitting sub-pixels respectively used for displaying three primary colors; The light-emitting layers of the plurality of pixel regions are formed by light-emitting materials of different colors injected into the plurality of pixelated through holes of the insulating mask plate in different regions, and the color of the light-emitting material corresponds to the color displayed by the light-emitting sub-pixel.

7. The display module according to any one of claims 1 to 5, characterized in that: The display module also includes: a hole injection layer and a hole transport layer, the hole injection layer is located on the side of the first electrode layer away from the substrate, the hole transport layer is located between the hole injection layer and the light-emitting layer, and the hole injection layer and the hole transport layer are arranged in the multiple pixelated through holes.

8. The display module according to any one of claims 1 to 7, characterized in that: The display module further includes: an electron transport layer, wherein the electron transport layer is located between the light-emitting layer and the second electrode layer, and the electron transport layer is disposed in the plurality of pixelated through holes.

9. The display module according to claim 8, characterized in that: The second electrode layer is located in a plurality of pixelated through holes of the insulating mask plate.

10. The display module according to any one of claims 1 to 9, characterized in that: The filling process of the quantum dot material includes: inkjet printing, spin coating, drop coating, photolithography or electrochemical deposition process.

11. The display module according to any one of claims 1 to 10, characterized in that: The inner side walls of the plurality of pixelated through holes of the insulating mask plate are provided with a protective layer.

12. A display module, characterized in that: include: A substrate, and a plurality of light-emitting sub-pixels disposed on the substrate; The plurality of light-emitting sub-pixels include: a first electrode layer, an aluminum film, a dielectric film, a plurality of anodized aluminum mask plates, a light-emitting layer, and a second electrode layer, wherein the first electrode layer, the aluminum film, the dielectric film, and the second electrode layer are sequentially stacked in a direction away from the substrate; The plurality of anodized aluminum mask plates are arranged in the aluminum film, the light-emitting layer comprises a light-emitting material, the anodized aluminum mask plate comprises a plurality of through holes, and the light-emitting materials are respectively arranged in the plurality of through holes; The dielectric film includes a plurality of pixelated through holes, the aperture of the plurality of pixelated through holes is 10nm-5um, the plurality of anodized aluminum mask plates correspond one-to-one to the plurality of pixelated through holes, and the plurality of pixelated through holes correspond one-to-one to the plurality of light-emitting sub-pixels.

13. The display module according to claim 12, characterized in that: The anodized aluminum mask is formed by corroding the aluminum film in an acidic solution through an anodic electrochemical oxidation process.

14. The display module according to claim 12 or 13, characterized in that: The plurality of pixelated through holes on the dielectric film are formed by photolithography and etching processes.

15. The display module according to any one of claims 12 to 14, characterized in that: The display module comprises: a plurality of pixel regions, each pixel region comprising at least three light-emitting sub-pixels respectively used for displaying three primary colors; The light-emitting layers of the plurality of pixel regions are formed by the light-emitting material injected into the plurality of through holes of the insulating mask plate by the plurality of pixelated through holes in different regions, and the color of the light-emitting material corresponds to the color displayed by the light-emitting sub-pixels.

16. The display module according to any one of claims 12 to 15, characterized in that: The display module also includes: a hole injection layer, a hole transport layer and an electron transport layer, the hole injection layer is located on the side of the first electrode layer away from the substrate, the hole transport layer is located between the hole injection layer and the light-emitting layer, and the electron transport layer is located between the light-emitting layer and the second electrode layer.

17. The display module according to any one of claims 12 to 16, characterized in that: The inner side walls of the multiple through holes of the anodized aluminum mask plate are provided with a protective layer.

18. A method for preparing a display module, characterized in that: The method comprises: forming a first electrode layer on a substrate; An insulating mask plate is disposed on a side of the first electrode layer away from the substrate, wherein the insulating mask plate comprises a plurality of pixelated through holes, and the aperture of the plurality of pixelated through holes is 10 nm-5 um; Injecting a light-emitting material into the plurality of pixelated through holes of the insulating mask plate to obtain a light-emitting layer; the first electrode layer, the light-emitting layer and the second electrode layer form a plurality of light-emitting sub-pixels, and the plurality of pixelated through holes correspond to the plurality of light-emitting sub-pixels one by one; A second electrode layer is disposed on the insulating mask plate.

19. A method for preparing a display module, characterized in that: The method comprises: forming a first electrode layer on a substrate; forming an aluminum film on a side of the first electrode layer away from the substrate; forming a dielectric film on the aluminum film; Performing selective photolithography and etching on the dielectric film to form a plurality of pixelated through holes, wherein the aperture of the plurality of pixelated through holes is 10 nm-5 um; The aluminum film at the plurality of pixelated through holes is corroded by an anodic electrochemical oxidation process in an acidic solution to form a plurality of anodized aluminum mask plates at the plurality of pixelated through holes; wherein the plurality of anodized aluminum mask plates correspond to the plurality of pixelated through holes one by one, and the dielectric film corresponds to the aluminum film; the anodized aluminum mask plate includes a plurality of through holes; Injecting light-emitting materials into the multiple through holes of the anodized aluminum mask through the multiple pixelated through holes to obtain a light-emitting layer; the first electrode layer, the light-emitting layer and the second electrode layer form a plurality of light-emitting sub-pixels, and the plurality of pixelated through holes correspond to the plurality of light-emitting sub-pixels one by one; A second electrode layer is arranged on a side of the dielectric film away from the substrate.

20. An electronic device, characterized in that: include: A processor and a display module as described in any one of claims 1 to 17, wherein the processor is used to control the display module to display an image.

21. The electronic device according to claim 20, characterized in that: The electronic device is a near-eye display device.

Images