Hot filament chemical vapor deposition assembly
By designing the hot wire chemical vapor deposition assembly, using the elasticity and surface area design of the spiral segment, the problem of the deposition rate of the thin film caused by the sagging of the hot wire is solved, and efficient film deposition and stable industrial production are achieved.
Patent Information
- Application Number
- CN202411701877.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-26
- Publication Date
- 2025-02-28
AI Technical Summary
Hot wires are prone to deformation and sagging in large-area deposition applications, resulting in a decrease in the rate and quality of thin film deposition, affecting the stability and continuous production capacity of industrialized large-scale production.
A hot wire chemical vapor deposition assembly is designed. The hot wire includes a spiral segment extending spirally in the first direction, connected to the side plates of the hot wire box at both ends of the hot wire, fixed in the chamber to maintain a slightly tensioned state, and use the elasticity of the spiral segment to slow down the deformation of the hot wire, and increase the deposition rate of the film through the design of the spiral segment.
The hot wire sags are effectively avoided, the distance between the substrate remains unchanged, the film deposition rate is improved, and the stability and continuous production capacity of the hot wire are ensured.
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Figure CN119530760A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of chemical vapor deposition, and in particular to a hot wire chemical vapor deposition component. Background Art
[0002] Chemical vapor deposition (CVD) has become the preferred method for preparing optoelectronic device thin films in the fields of electronic science and information technology. Common methods include photodecomposition CVD, hot wire CVD, reactive thermal CVD, and low-temperature plasma CVD. Hot wire CVD is sometimes called Cat-CVD. It activates the decomposition reaction gas through a high-temperature hot wire medium to form a growth group, which moves in space to the substrate surface to form a solid film. Since hot wire CVD does not have high-concentration ion bombardment during the film deposition process, it is widely used for thin film deposition on flexible or non-etching substrate surfaces. However, in the application of large-area deposition, with the increase in the frequency of use, the hot wire is easily deformed, causing the horizontally arranged hot wire to sag and reduce its distance from the substrate. The deposition rate of the film and the thermal radiation of the hot wire to the substrate will change significantly.
[0003] In the related art, the hot wire is usually prevented from sagging by tightening it in sections with a hot wire clamp or tightening the two fixed ends of the hot wire as a whole. However, both of these methods will cause the diameter of the hot wire to become smaller and smaller, thereby reducing the ability to decompose the reaction gas. The deposition rate and quality of the film will decrease with the increase in the number of deposition times, which is not conducive to the stability of the product and the ability of continuous production in industrial large-scale production. Summary of the invention
[0004] The present invention aims to solve one of the technical problems in the related art at least to a certain extent.
[0005] To this end, an embodiment of the present invention provides a hot wire chemical vapor deposition assembly, which has the advantages of preventing the hot wire from deforming and sagging while not affecting the film deposition rate.
[0006] The hot wire chemical vapor deposition assembly of an embodiment of the present invention includes a hot wire box and a hot wire, wherein the hot wire box surrounds a first molding chamber, and the hot wire box includes a first side plate and a second side plate arranged opposite to each other along a first direction; there are multiple hot wires, and the multiple hot wires are located in the first chamber and arranged at intervals along a second direction, the second direction is perpendicular to the first direction, and the opposite ends of the hot wire along the first direction are respectively connected to the first side plate and the second side plate, and the hot wire includes a spiral section extending spirally along the first direction.
[0007] According to the hot wire chemical vapor deposition assembly of the embodiment of the present invention, the hot wire is provided with a spiral section extending in a spiral direction, and the two ends of the hot wire are respectively connected to the first side plate and the second side plate of the hot wire box, so that the hot wire is in a slightly tensioned state as a whole after being fixed in the first chamber. At this time, after the hot wire is heated for many times, the change in the length of the hot wire in the wire diameter direction can be slowed down by the elastic change of the spiral section, thereby effectively avoiding the hot wire from sagging and causing the distance between the hot wire and the substrate to become shorter, and the design that the spiral section has a larger surface area than the straight section under a limited length effectively increases the deposition rate of the thin film.
[0008] In some embodiments, the hot wire further includes a straight line segment extending along the first direction, and there are a plurality of the straight line segments and the spiral segments, which are alternately arranged along the first direction.
[0009] In some embodiments, the hot wire chemical vapor deposition assembly also includes a support frame, which is installed in the first chamber. The support frame is located below the straight line segment and abuts against the straight line segment. On the projection plane perpendicular to the height direction of the hot wire box, the projection of the support frame and the projection of the spiral segment do not overlap with each other.
[0010] In some embodiments, the hot wire box further includes a third side plate and a fourth side plate disposed opposite to each other along the second direction;
[0011] The support frame includes a plurality of support rods arranged at intervals along the first direction, two ends of the support rods are respectively connected to the third side plate and the fourth side plate, and the support rods are located below the straight line segment and abut against the straight line segment.
[0012] In some embodiments, the number of the straight line segments in each of the hot wires is greater than or equal to the number of the support rods, and the size of the straight line segment in the first direction is greater than the maximum size of the support rod in the first direction.
[0013] In some embodiments, the hot wire box and / or the support frame are both made of ceramic material, or the outer surface of the hot wire box and / or the support frame is provided with a ceramic coating.
[0014] In some embodiments, the first side panel and the second side panel are respectively provided with a first mounting hole and a second mounting hole, and the sides of the first side panel and the second side panel opposite to each other are respectively provided with a first fastener and a second fastener, the first end of the hot wire passes through the first mounting hole and is connected to the first fastener, and the second end of the hot wire passes through the second mounting hole and is connected to the second fastener.
[0015] In some embodiments, the upper end of the first chamber is opened, and the hot wire chemical vapor deposition assembly also includes a gas distribution box formed with a second chamber, the gas distribution box is connected to the upper end of the hot wire box, the bottom plate of the gas distribution box closes the upper end opening of the first chamber, and the bottom plate of the gas distribution box is provided with a plurality of gas distribution holes connecting the first chamber and the second chamber, and the side plate of the gas distribution box is provided with an air inlet hole.
[0016] In some embodiments, on a projection plane perpendicular to the height direction of the hot wire box, a projection of the air distribution hole partially overlaps with a projection of the spiral segment.
[0017] In some embodiments, the air distribution box and the hot wire box are integrally formed. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] Figure 1 Schematic diagram of a hot wire box and a hot wire in a hot wire chemical vapor deposition assembly according to an embodiment of the present invention.
[0019] Figure 2 Schematic diagram of a gas distribution box in a hot wire chemical vapor deposition assembly according to an embodiment of the present invention.
[0020] Reference numerals:
[0021] 1. Hot wire box; 11. First side panel; 111. First mounting hole; 12. Second side panel; 121. Second mounting hole; 13. Third side panel; 14. Fourth side panel; 2. Hot wire; 21. Spiral segment; 22. Straight segment; 3. Support rod; 4. Air distribution box; 41. Air distribution hole; 42. Air inlet hole. DETAILED DESCRIPTION
[0022] Embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and intended to be used to explain the present invention, but should not be understood as limiting the present invention.
[0023] Combine the following Figure 1 and Figure 2 A hot wire chemical vapor deposition assembly according to an embodiment of the present invention is described.
[0024] The hot wire chemical vapor deposition assembly of an embodiment of the present invention includes a hot wire box 1 and a hot wire 2. The hot wire box 1 surrounds a first molding chamber, and the hot wire box 1 includes a first side plate 11 and a second side plate 12 that are relatively arranged along a first direction; there are multiple hot wires 2, and the multiple hot wires 2 are located in the first chamber and arranged at intervals along a second direction, the second direction is perpendicular to the first direction, and the opposite ends of the hot wire 2 along the first direction are respectively connected to the first side plate 11 and the second side plate 12, and the hot wire 2 includes a spiral section 21 that extends spirally along the first direction.
[0025] According to the hot wire chemical vapor deposition assembly of the embodiment of the present invention, the hot wire 2 includes a spiral section 21 extending in a spiral direction, and the two ends of the hot wire 2 are respectively connected to the first side plate 11 and the second side plate 12 of the hot wire box 1, so that the hot wire 2 is in a slightly tensioned state as a whole. At this time, after the hot wire 2 is heated for many times, the change in the length of the hot wire 2 in the wire diameter direction can be slowed down by the elastic change of the spiral section 21, thereby effectively preventing the hot wire 2 from sagging and causing the distance between the hot wire 2 and the substrate to become shorter. Combined with the design that the spiral section 21 has a larger surface area than the straight section 22 under a limited length, the deposition rate of the thin film is effectively increased.
[0026] It should be noted that the lower end of the first chamber is open, and a substrate is arranged below the first chamber. The first direction and the second direction are the length direction and the width direction of the hot wire box 1 respectively.
[0027] In some embodiments, Figure 1 As shown, the hot wire 2 further includes a straight segment 22 extending along the first direction. There are multiple straight segments 22 and multiple spiral segments 21, which are alternately arranged along the first direction.
[0028] The design of multiple spiral segments 21 further increases the surface area of the hot wire 2 when the distance between the two ends of the hot wire 2 remains unchanged, and further increases the deposition rate of the thin film. Moreover, when the hot wire 2 is fixed between the first side plate 11 and the second side plate 12, the multiple spiral segments 21 can also form a larger elastic deformation stroke. When the hot wire 2 is heated multiple times, the hot wire 2 can better maintain the tension state with the elastic deformation of the spiral segments 21, thereby ensuring that the distance between the hot wire 2 and the substrate remains unchanged.
[0029] Specifically, the sizes of the plurality of spiral segments 21 in the first direction are all equal, and the plurality of spiral segments 21 are arranged at equal intervals along the first direction.
[0030] In some embodiments, Figure 1 As shown, the hot wire chemical vapor deposition assembly also includes a support frame, which is installed in the first chamber. The support frame is located below the straight segment 22 and abuts against the straight segment 22. On the projection plane perpendicular to the height direction of the hot wire box 1, the projection of the support frame and the projection of the spiral segment 21 do not overlap each other.
[0031] Under the support of the support frame, the hot wire 2 can be better prevented from sagging, and the distance between the hot wire 2 and the substrate can be more reliably guaranteed to remain unchanged. In addition, by setting the support frame to abut against the straight section 22 instead of the spiral section 21, it can be better guaranteed that the gas passes through the spiral section 21 to sink and form a film.
[0032] Specifically, on the projection plane perpendicular to the height direction, it is preferred to set the projection area of the support frame as small as possible to effectively ensure the thin film deposition rate.
[0033] In some embodiments, Figure 1 As shown, the hot wire box 1 also includes a third side plate 13 and a fourth side plate 14 arranged opposite to each other along the second direction. The support frame includes a plurality of support rods 3 arranged at intervals along the first direction, and the two ends of the support rods 3 are respectively connected to the third side plate 13 and the fourth side plate 14, and the support rods 3 are located below the straight line segment 22 and abut against the straight line segment 22.
[0034] At this time, the contact area between the plurality of support rods 3 and the straight segment 22 is smaller, the blocking effect of the plurality of support rods 3 on the gas is smaller, and the deposition rate of the thin film is higher.
[0035] Specifically, both ends of the support rod 3 can be plugged, snap-connected or screwed to the third side plate 13 and the fourth side plate 14 respectively. The support rod 3 can be a round rod or a square rod.
[0036] Alternatively, the support frame may also be a grid-like structure with a plurality of hollow holes.
[0037] In some embodiments, the number of straight segments 22 in each hot wire 2 is greater than or equal to the number of support rods 3 , and the size of the straight segment 22 in the first direction is greater than the maximum size of the support rod 3 in the first direction.
[0038] By providing a smaller number of support rods 3, while the support rods 3 support the hot wire 2 to prevent the hot wire 2 from sagging, the influence of the support rods 3 on the film deposition rate is further reduced.
[0039] Specifically, a plurality of support rods 3 are arranged at equal intervals along the first direction.
[0040] In some embodiments, the hot wire box 1 and / or the support frame are both made of ceramic material, or the outer surface of the hot wire box 1 and / or the support frame is provided with a ceramic coating.
[0041] This arrangement enables the hot wire box 1 and the support frame to have good heat resistance and insulation, and a low thermal expansion coefficient, which is not easy to affect the functionality of the hot wire 2, and the service life and safety of the hot wire chemical vapor deposition component are higher.
[0042] In some embodiments, the first side plate 11 and the second side plate 12 are respectively provided with a first mounting hole 111 and a second mounting hole 121, and the sides of the first side plate 11 and the second side plate 12 opposite to each other are respectively provided with a first fastener and a second fastener, the first end of the hot wire 2 passes through the first mounting hole 111 and is connected to the first fastener, and the second end of the hot wire 2 passes through the second mounting hole 121 and is connected to the second fastener.
[0043] This arrangement makes it easy and convenient to fix the hot wire 2 on the hot wire box 1, and also allows both ends of the hot wire 2 to be exposed to the outside so as to be electrically connected to an external circuit.
[0044] Specifically, the first fastener and the second fastener may be blocks having a cross-sectional area larger than that of the first mounting hole 111 and the second mounting hole 121 , and the first fastener and the second fastener are movably disposed on the outer sides of the first side plate 11 and the second side plate 12 , respectively.
[0045] In some embodiments, the upper end of the first chamber is opened, and the hot wire chemical vapor deposition assembly also includes an air distribution box 4 forming a second chamber. The air distribution box 4 is connected to the upper end of the hot wire box 1, and the bottom plate of the air distribution box 4 closes the upper end opening of the first chamber. The bottom plate of the air distribution box 4 is provided with a plurality of air distribution holes 41 connecting the first chamber and the second chamber, and the side plate of the air distribution box 4 is provided with an air inlet hole 42.
[0046] The gas enters the second chamber from the air inlet 42, and after diffusion in the second chamber, is evenly blown into the first chamber from the air distribution holes 41 to ensure that the gas is evenly in contact with each position of the hot chamber, effectively ensuring the film deposition rate.
[0047] Specifically, the air inlet holes 42 can be arranged on two side panels of the air distribution box 4 that are opposite to each other along the second direction, two air inlet holes 42 are arranged at the center of the two side panels, and the air distribution holes 41 are evenly distributed on the bottom plate of the air distribution box 4.
[0048] In some embodiments, on a projection plane perpendicular to the height direction of the hot wire box 1 , the projection of the air distribution hole 41 partially overlaps with the projection of the spiral segment 21 .
[0049] That is, the gas distribution holes 41 face the spiral section 21 in the height direction, thereby better ensuring that the gas is in uniform and sufficient contact with the spiral section 21, and reliably sinking the formed film, further ensuring the film deposition rate.
[0050] In some embodiments, the gas distribution box 4 and the hot wire box 1 are integrally formed, thereby effectively improving the connection strength and connection sealing between the two, and the assembly efficiency of the hot wire chemical vapor deposition assembly is high.
[0051] Alternatively, the air distribution box 4 and the hot wire box 1 can also be detachably connected.
[0052] In the description of the present invention, it is to be understood that the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.
[0053] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
[0054] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection, an electrical connection, or communication with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0055] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.
[0056] In the present invention, the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" etc. mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the described specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.
[0057] Although the above embodiments have been shown and described, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations on the present invention. Changes, modifications, substitutions and variations of the above embodiments by those of ordinary skill in the art are all within the scope of protection of the present invention.
Claims
1. A hot wire chemical vapor deposition assembly, characterized in that: include: A hot wire box, the hot wire box surrounds the first molding chamber, and the hot wire box includes a first side plate and a second side plate arranged opposite to each other along a first direction; A hot wire, wherein the number of the hot wires is multiple, the multiple hot wires are located in the first chamber and are arranged at intervals along a second direction, the second direction is perpendicular to the first direction, the opposite ends of the hot wire along the first direction are respectively connected to the first side plate and the second side plate, and the hot wire includes a spiral segment extending spirally along the first direction.
2. The hot wire chemical vapor deposition assembly according to claim 1, characterized in that: The hot wire further includes a straight line segment extending along the first direction, and there are a plurality of the straight line segments and the spiral segment and the straight line segments are alternately arranged along the first direction.
3. The hot wire chemical vapor deposition assembly according to claim 2, characterized in that: The hot wire chemical vapor deposition assembly also includes a support frame, which is installed in the first chamber. The support frame is located below the straight segment and abuts against the straight segment. On a projection plane perpendicular to the height direction of the hot wire box, the projection of the support frame and the projection of the spiral segment do not overlap each other.
4. The hot wire chemical vapor deposition assembly according to claim 3, characterized in that: The hot wire box further comprises a third side plate and a fourth side plate which are arranged opposite to each other along the second direction; The support frame includes a plurality of support rods arranged at intervals along the first direction, two ends of the support rods are respectively connected to the third side plate and the fourth side plate, and the support rods are located below the straight line segment and abut against the straight line segment.
5. The hot wire chemical vapor deposition assembly according to claim 4, characterized in that: The number of the straight line segments in each of the hot wires is greater than or equal to the number of the support rods, and the size of the straight line segment in the first direction is greater than the maximum size of the support rod in the first direction.
6. The hot wire chemical vapor deposition assembly according to claim 3, characterized in that: The hot wire box and / or the support frame are both made of ceramic material, or the outer surface of the hot wire box and / or the support frame is provided with a ceramic coating.
7. The hot wire chemical vapor deposition assembly according to claim 1, characterized in that: The first side plate and the second side plate are respectively provided with a first mounting hole and a second mounting hole, and the sides of the first side plate and the second side plate opposite to each other are respectively provided with a first fastener and a second fastener, the first end of the hot wire passes through the first mounting hole and is connected to the first fastener, and the second end of the hot wire passes through the second mounting hole and is connected to the second fastener.
8. The hot wire chemical vapor deposition assembly according to claim 2, characterized in that: The upper end of the first chamber is opened, and the hot wire chemical vapor deposition assembly also includes an air distribution box formed with a second chamber, the air distribution box is connected to the upper end of the hot wire box, the bottom plate of the air distribution box closes the upper end opening of the first chamber, and the bottom plate of the air distribution box is provided with a plurality of air distribution holes connecting the first chamber and the second chamber, and the side plate of the air distribution box is provided with an air inlet hole.
9. The hot wire chemical vapor deposition assembly according to claim 8, characterized in that: On a projection plane perpendicular to the height direction of the hot wire box, the projection of the air distribution hole partially overlaps with the projection of the spiral segment.
10. The hot wire chemical vapor deposition assembly according to claim 8, characterized in that: The air distribution box and the hot wire box are integrally formed.