Substrate polishing method, program, and substrate polishing apparatus

Abstract

The present invention provides a substrate polishing method and the like for polishing substrates of various sizes. A substrate polishing method is provided by a polishing apparatus including a polishing table having a polishing surface, a top ring for holding a substrate and pressing the substrate against the polishing surface, and a vertical movement mechanism for moving the top ring up and down. The method comprises the following steps: an acquisition step of acquiring information about the thickness of the substrate; a position adjusting step: adjusting the height position of the top ring relative to the grinding table based on the acquired information about the thickness of the substrate; and a polishing step of polishing the substrate by supplying a pressure fluid to a pressure chamber of a top ring and pressing the substrate against the polishing surface.

Description

Technical Field

[0001] The present invention relates to a substrate polishing method, a procedure, and a substrate polishing device. Background Art

[0002] In the manufacture of semiconductor devices, a chemical mechanical polishing (CMP) device is used to flatten the surface of a substrate. The substrate used to manufacture semiconductor devices is in most cases in the shape of a circular plate. In addition, not limited to semiconductor devices, the flatness requirement when flattening the surface of a quadrilateral substrate such as a CCL substrate (Copper Clad Laminate substrate) or PCB (Printed Circuit Board) substrate, a mask substrate, a display panel, etc. is also increased. In addition, the requirement for flattening the surface of a package substrate such as a PCB substrate equipped with electronic devices is also increased.

[0003] As a substrate holding device in a substrate polishing device, a so-called floating top ring is widely used, which is a type in which an elastic film (film) is fixed to a clamp, and a fluid such as air is supplied to a pressure chamber (pressurized chamber) formed on the upper part of the clamp and a pressure chamber formed by the elastic film (film), thereby pressing the semiconductor wafer against the polishing pad through the elastic film by fluid pressure. In addition, as such a substrate holding device, a vertical movement mechanism is known that moves a carrier (top ring body) supporting the film up and down. The vertical movement mechanism is used to adjust the position of the top ring body relative to the polishing table, and then the pressure in the film is adjusted, thereby performing polishing in a manner that achieves a desired polishing profile.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2003-103458

[0007] Patent Document 2: Japanese Patent Application Publication No. 2014-176950

[0008] Patent Document 3: Japanese Patent Application Publication No. 2010-46756

[0009] (Problem to be solved by the invention)

[0010] The size of semiconductor substrates is generally determined by specifications (such as SEMI specifications). However, most of the above-mentioned CCL substrates or PCB substrates, mask substrates, display panels and other substrates do not have size specifications, and there may be substrates of various sizes. When the substrate is held by the substrate holding device as described above, if the size of the substrate is different, the positional relationship between the substrate and the grinding table changes. In particular, if the thickness of the substrate is different, the positional relationship between the grinding surface of the grinding table and the ground surface of the substrate changes, which may have an adverse effect on the control of the substrate holding device or the grinding profile. Summary of the invention

[0011] In view of the above practical situation, one of the objects of the present invention is to provide a substrate polishing method, procedure, or substrate polishing device for polishing substrates of various sizes.

[0012] (Methods of solving the problem)

[0013] According to one embodiment, a substrate polishing method is proposed, which is a substrate polishing method performed by a polishing device, the polishing device comprising: a polishing table having a polishing surface, a top ring for holding a substrate and pressing the substrate against the polishing surface, a vertical movement mechanism for moving the top ring up and down, and a sensor for acquiring information about the thickness of the substrate, the top ring having a thin film and a top ring body, the thin film being an elastic film forming a pressure chamber to which a pressure fluid is supplied, the top ring body holding the thin film, the top ring being configured to press the substrate against the polishing surface by supplying a pressure fluid to the pressure chamber, the substrate polishing method comprising the following steps: an acquisition step of acquiring information about the thickness of the substrate by the sensor; a position adjustment step of adjusting the height position of the top ring relative to the polishing table based on the acquired information about the thickness of the substrate; and a polishing step of pressing the substrate against the polishing surface by supplying a pressure fluid to the pressure chamber, thereby polishing the substrate.

[0014] According to another embodiment, a program is provided for causing a processing device of a polishing device to perform a control process for polishing a processing surface of a substrate, the polishing device comprising: a polishing table having a polishing surface, a top ring for holding a substrate and pressing the substrate against the polishing surface, a vertical movement mechanism for moving the top ring up and down, and a sensor for acquiring information about the thickness of the substrate, the top ring having a thin film and a top ring body, the thin film being an elastic film forming a pressure chamber to which a pressure fluid is supplied, the top ring body holding the thin film, the top ring being configured to press the substrate against the polishing surface by supplying a pressure fluid to the pressure chamber, the control process comprising the following steps: an acquisition step of acquiring information about the thickness of the substrate by the sensor; a position adjustment step of adjusting a height position of the top ring relative to the polishing table based on the acquired information about the thickness of the substrate; and a polishing step of pressing the substrate against the polishing surface by supplying a pressure fluid to the pressure chamber, thereby polishing the substrate.

[0015] According to another embodiment, a substrate polishing device is proposed, characterized in that it comprises: a polishing table having a polishing surface; a top ring for holding a substrate and pressing the substrate against the polishing surface, the top ring having a thin film and a top ring body, the thin film being an elastic film forming a pressure chamber to which a pressure fluid is supplied, the top ring body holding the thin film, the top ring being configured to press the substrate against the polishing surface by supplying a pressure fluid to the pressure chamber; an up-and-down moving mechanism that moves the top ring up and down; a sensor for obtaining information about the thickness of the substrate; and a control device, the control device being configured to adjust the height position of the top ring relative to the polishing table based on the information about the thickness of the substrate obtained by the sensor, supply a pressure fluid to the pressure chamber to press the substrate against the polishing surface, and thereby polish the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a plan view showing the overall structure of a substrate polishing apparatus according to one embodiment.

[0017] Figure 2 It is a side view schematically showing a loading unit according to one embodiment.

[0018] Figure 3 It is a perspective view showing a conveying mechanism in a loading unit according to an embodiment.

[0019] Figure 4 It is a side view schematically showing a transport unit according to one embodiment.

[0020] Figure 5 It is a perspective view showing a pusher according to one embodiment.

[0021] Figure 6 yes Figure 5 The illustrated diagram is a partial cross-sectional view of the pusher viewed in the direction of arrow 6.

[0022] Figure 7 It is a partial cross-sectional view showing a case where the first stage and the second stage are in the upper position.

[0023] Figure 8 It is a partial cross-sectional view showing a case where the first stage and the second stage are located at the upper positions, and the second stage is located at a position raised relative to the first stage.

[0024] Fig. 9 This is a perspective view schematically showing a polishing unit according to one embodiment.

[0025] Fig.10 This is a cross-sectional view showing an example of a top ring constituting a polishing head that holds a substrate and presses it against a polishing surface on a polishing table.

[0026] Fig.11 This is a flowchart showing a substrate polishing method according to one embodiment.

[0027] Fig.12 This is a cross-sectional view showing a top ring and a polishing pad when the thickness of a substrate is relatively small according to one embodiment.

[0028] Fig.13 This is a cross-sectional view showing a top ring and a polishing pad when the thickness of the substrate is relatively large according to one embodiment. DETAILED DESCRIPTION

[0029] In the following drawings, the embodiments of the present invention are described. In the drawings described below, the same or corresponding components are denoted by the same reference numerals and repeated description is omitted.

[0030] Figure 1 It is a plan view showing the overall structure of a substrate polishing apparatus 1000 according to one embodiment. Figure 1The substrate polishing device 1000 shown has: a loading unit 100, a conveying unit 200, a polishing unit 300, a drying unit 500 and a removal unit 600. In the illustrated embodiment, the conveying unit 200 has: two conveying units 200A and 200B, and the polishing unit 300 has: two polishing units 300A and 300B. Among them, the conveying unit 200 and the polishing unit 300 may also be one or more than three. In one embodiment, these units can be formed independently. By forming these units independently, by arbitrarily combining the number of each unit, a substrate polishing device 1000 with different structures can be easily formed. In addition, the substrate polishing device 1000 is provided with a control device 900, and each component of the substrate polishing device 1000 is controlled by the control device 900. In one embodiment, the control device 900 can be composed of a general computer having an input and output device, a computing device, a storage device (storage medium) 900a, etc. The control device 900 functions as a main body for controlling the operation of the substrate polishing device 1000. The control device 900 reads and executes a program stored in the storage device 900a, etc., thereby performing various processes. The program may be acquired and recorded on a recording medium such as a DVD-ROM, or acquired through a network.

[0031] <Loading unit>

[0032] The loader unit 100 is a unit for introducing a substrate WF before being subjected to processes such as polishing and cleaning into the substrate polishing apparatus 1000 . Figure 2 FIG. 1 is a side view schematically showing a loading unit 1008 according to an embodiment. In one embodiment, the loading unit 100 includes a housing 102. The housing 102 includes an inlet opening 104 on a side for receiving a substrate WF. Figure 2 In the embodiment shown, the right side is the entrance side. The loading unit 100 receives the substrate WF as the processing object from the entrance opening 104. Figure 2 The processing device (right side in the middle) is configured to implement a processing step earlier than the processing of the substrate WF based on the substrate polishing device 1000 of the present disclosure. Figure 2 In the illustrated embodiment, the loading unit 100 includes an ID reader 106. The ID reader 106 reads the ID of the substrate received from the inlet opening 104. The substrate polishing device 1000 performs various processes on the substrate WF according to the read ID. In one embodiment, the loading unit 100 may not include the ID reader 106. In one embodiment, the loading unit 100 is configured in accordance with the mechanical device interface specification (IPC-SMEMA-9851) of SMEMA (Surface Mount Equipment Manufacturers Association).

[0033] exist Figure 2 In the embodiment shown, the loading unit 100 includes a plurality of conveying rollers 202 for conveying the substrate WF. By rotating the conveying rollers 202, the substrate WF can be conveyed in a predetermined direction ( Figure 2 The substrate WF on the conveying roller 202 is conveyed by the frame 102 of the loading unit 100 (left direction in the figure). In the illustrated embodiment, the frame 102 of the loading unit 100 has an exit opening 108 for the substrate WF. The loading unit 100 has a sensor 112 for detecting whether the substrate WF exists at a predetermined position on the conveying roller 202. The sensor 112 can be formed as a sensor of any form, and can be formed as an optical sensor, for example. Figure 2 In the illustrated embodiment, two sensors 112 are provided in the frame 102, one sensor 112a provided near the entrance opening 104, and the other sensor 112b provided near the exit opening 108. In one embodiment, the operation of the loading unit 100 can be controlled according to the detection of the substrate WF by these sensors 112. For example, if the sensor 112a near the entrance opening 104 detects the presence of the substrate WF, the rotation of the conveying roller 202 in the loading unit 100 can be started, and the rotation speed of the conveying roller 202 can be changed. In addition, if the sensor 112b near the exit opening 108 detects the presence of the substrate WF, the entrance shutter 218 of the conveying unit 200A as the subsequent unit can be opened. In addition, in one embodiment, the loading unit 100 has a sensor 260 for detecting the thickness of the substrate WF conveyed by the conveying roller 202. The sensor 260 can be formed as a sensor of any form, and can be formed as a distance measuring sensor such as an optical type. The sensor 260 is not limited to being disposed in the loading unit 100 , but may be disposed in the conveying unit 200 instead of or in addition to the loading unit 100 to detect the thickness of the substrate WF on the conveying roller 202 of the conveying unit 200 .

[0034] Figure 31 is a perspective view showing a conveying mechanism in a loading unit 100 according to an embodiment. In the illustrated embodiment, the conveying mechanism of the loading unit 100 includes: a plurality of conveying rollers 202, and a plurality of roller shafts 204 on which the conveying rollers 202 are mounted. In the illustrated embodiment, three conveying rollers 202 are mounted on each roller shaft 204. The substrate WF is arranged on the conveying rollers 202, and the substrate WF is conveyed by the rotation of the conveying rollers 202. The installation position of the conveying rollers 202 on the roller shaft 204 can be formed to be arbitrary if it is a position that can stably convey the substrate WF. Among them, since the conveying rollers 202 are in contact with the substrate WF, the conveying rollers 202 should be arranged to contact with an area where there will be no problem even if they contact the substrate WF as a processing object. In one embodiment, the conveying rollers 202 of the loading unit 100 may be composed of a conductive polymer. In one embodiment, the conveying rollers 202 are electrically grounded via the roller shafts 204. This is to prevent the substrate WF from being charged and damaging the substrate WF. Furthermore, in one embodiment, an electrostatic eliminator (not shown) may be provided in the loading unit 100 to prevent the substrate WF from being charged. Furthermore, in one embodiment, the sensor 260 for detecting the thickness of the substrate WF is configured to detect the center (the center in a direction perpendicular to the conveying direction) or its vicinity of the substrate WF conveyed by the conveying roller 202. The sensor 260 is not limited to detecting the center of the substrate WF, but may detect any location. Furthermore, as an example, the sensor 260 may be provided with a plurality of sensors in a manner to detect a plurality of locations in a direction perpendicular to the conveying direction, or a driving mechanism may be provided to move the sensor in a direction perpendicular to the conveying direction.

[0035] exist Figure 3 In the embodiment shown, the roller 204 is driven to rotate by the motor 208 via the gear 206. In one embodiment, the motor 208 may be formed as a servo motor. By using the servo motor, the rotation speed of the roller 204 and the conveying roller 202, that is, the conveying speed of the substrate WF, can be controlled. In addition, in one embodiment, the gear 206 may be formed as a magnetic gear. Since the magnetic gear is a non-contact power transmission mechanism, it does not cause the generation of microparticles due to wear like a contact gear, and also does not require maintenance such as oiling.

[0036] like Figure 2 , Figure 3 As shown, the loading unit 100 is provided with auxiliary rollers 214 near the inlet opening 104 and the outlet opening 108. The auxiliary rollers 214 are arranged at the same height as the conveying rollers 202. The position of the auxiliary rollers 214 can be changed according to the size of the substrate WF being conveyed. The auxiliary rollers 214 support the substrate WF in a manner that the substrate WF being conveyed does not fall between the unit and other units. The auxiliary rollers 214 are not connected to a power source and are configured to be freely rotatable.

[0037] In one embodiment, the loading unit 100 may also be provided with a reversing machine (not shown) for reversing the received substrate WF. As an example, when the substrate WF is transported to the loading unit 100 in a manner such that the surface on which the pattern region is formed becomes the upper surface according to the specifications of the upstream processing device, the substrate WF may be reversed by the reversing machine, and the surface on which the pattern region is formed becomes the lower surface before the subsequent processing of the substrate polishing device 1000 is performed.

[0038] <Conveying unit>

[0039] Figure 4 It is a side view schematically showing the transport unit 200 according to one embodiment. Figure 1 The substrate polishing device 1000 shown has two conveying units 200A and 200B. The two conveying units 200A and 200B can be formed into the same structure, so they are collectively described as the conveying unit 200 below. The conveying unit 200 has a plurality of conveying rollers 202 for conveying the substrate WF. By rotating the conveying rollers 202, the substrate WF on the conveying rollers 202 can be conveyed in a predetermined direction. The conveying rollers 202 of the conveying unit 200 can also be formed of a conductive polymer or a non-conductive polymer. The conveying rollers 202 are mounted on the roller shaft 204 ( Figure 4 The substrate WF is driven by the motor 208 via the gear 206. In one embodiment, the motor 208 may be a servo motor, and the gear 206 may be a gear type, but may also be a magnetic gear as in the loading unit 100. In addition, the transport unit 200 shown in the figure is provided with a guide roller 212 ( Figure 4 The transport unit 200 shown in the figure has a sensor 216 for detecting whether the substrate WF exists at a predetermined position on the transport roller 202. The sensor 216 can be formed as a sensor of any form, and can be formed as an optical sensor, for example. Figure 4 In the embodiment shown, seven sensors 216 (216a to 216g) are provided in the conveying unit 200. In one embodiment, the operation of the conveying unit 200 can be controlled according to the detection of the substrate WF by these sensors 216a to 216g. However, the number and arrangement of the sensors 216 are not limited to Figure 4 The conveying unit 200 has an openable and closable entrance shutter 218 to receive the substrate WF in the conveying unit 200. In one embodiment, the conveying unit 200 is also provided with a supporting member ( Figure 4), and a plurality of guide rollers 212 (not shown) for supporting the substrate WF on both sides in the width direction of the substrate WF being transported. Figure 4 (not shown in the figure).

[0040] like Figure 4 As shown, the conveying unit 200 has a stopper 220. The stopper 220 is connected to a stopper moving mechanism 222, and the stopper 220 can enter the conveying path of the substrate WF moving on the conveying roller 202. When the stopper 220 is located in the conveying path of the substrate WF, the side of the substrate WF moving on the conveying roller 202 contacts the stopper 220, and the moving substrate WF can be stopped at the position of the stopper 220. In addition, when the stopper 220 is located at a position retreated from the conveying path of the substrate WF, the substrate WF can move on the conveying roller 202. The position where the substrate WF is stopped by the stopper 220 is a position (substrate handover position) where the pusher 230 described later can take in the substrate WF on the conveying roller 202.

[0041] like Figure 4 As shown by the dotted line, the transport unit 200 includes a pusher 230. The pusher 230 is configured to push up the substrate WF on the plurality of transport rollers 202 so as to be separated from the plurality of transport rollers 202. In addition, the pusher 230 is configured to deliver the held substrate WF to the transport rollers 202 of the transport unit 200.

[0042] Figure 5 It is a perspective view showing the pusher 230 according to one embodiment. Figure 6 yes Figure 5 The illustrated portion is a cross-sectional view of the pusher 230 viewed toward arrow 6 . Figure 6 2 , together with the pusher 230 , schematically shows the conveying roller 202 , the substrate WF disposed at the substrate delivery position on the conveying roller 202 , and the top ring 302 for receiving the substrate WF. Figure 5 , 6 In the embodiment shown, the pusher 230 includes a first stage 232 and a second stage 270. The first stage 232 is a stage for supporting the holder member 3 of the top ring 302 when the substrate WF is transferred from the pusher 230 to the top ring 302 described later. The first stage 232 includes a plurality of support pillars 234. Figure 5As shown, the end of the support column 234 includes: a flat support surface 234a of the retainer component 3 supporting the top ring 302, and an inclined surface 234b for guiding the top ring 302. In one embodiment, the support columns 234 located at the four corners among the multiple support columns 234 may include a support surface 234a and an inclined surface 234b. The retainer component 3 can be aligned by the recessed portions formed by the support columns 234 at the four corners. The support columns 234 other than the four corners may also include only the support surface 234a. The other end of each support column 234 is connected to a common base 236. In addition, each support column 234 is disposed at a position that does not interfere with the conveying roller 202. Figure 5 In the embodiment shown, each support column 234 is arranged between the conveying rollers 202. The second stage 270 is configured to receive the substrate WF on the conveying rollers 202. The second stage 270 includes a plurality of support columns 272. The ends of the support columns 272 include a flat support surface for supporting the substrate WF. The other ends of each support column 272 are connected to a common base 274. In addition, each support column 272 is arranged at a position that does not interfere with the conveying rollers 202. Figure 6 In the illustrated embodiment, each support column 272 is disposed between the conveying rollers 202. As described in detail below, the first stage 232 and the second stage 270 are respectively connected to a lifting mechanism and are respectively movable in the height direction (z direction).

[0043] The first stage 232 is configured to be movable in the height direction (z direction). In one embodiment, the pusher 230 has a first lifting mechanism 231. Figure 5 , 6As shown, the first lifting mechanism 231 of the pusher 230 is a pneumatic lifting mechanism and is provided with a cylinder 240 and a piston 242. The end of the piston 242 is connected to a movable pedestal 244. The cylinder 240 is connected to a fixed pedestal 246. The fixed pedestal 246 is fixed to a frame 201 covering the entirety of the conveying unit 200 or to a floor surface on which the conveying unit 200 is disposed. By adjusting the air pressure in the cylinder 240, the piston 242 moves, and the movable pedestal 244 can be moved in the height direction (z direction). By moving the movable pedestal 244 in the height direction, the first stage 232 and the second stage 270 can be moved in the height direction. In the illustrated embodiment, an XY stage 248 is mounted on the movable pedestal 244, which enables the first stage 232 and the second stage 270 to move in a horizontal plane. The XY stage 248 can be a well-known XY stage that is configured to be movable in two orthogonal directions by a linear guide or the like. In the illustrated embodiment, a rotating stage 250 is mounted on the XY stage 248. The rotating stage 250 is configured to be rotatable in the XY plane (horizontal plane). In other words, the rotating stage 250 is configured to be rotatable around the z-axis. The rotating stage 250 can adopt a well-known rotating stage 250 composed of a rotary bearing or the like. A second lifting mechanism 233 is mounted on the rotating stage 250. The second lifting mechanism 233 has a cylinder 252 and a piston 254. The base 236 of the first stage 232 is connected to the cylinder 252. In addition, a movable piston 254 is connected to the cylinder 252, and the piston 254 can be moved by adjusting the air pressure in the cylinder 252. The base 274 of the second stage 270 is connected to the end of the piston 254. Therefore, by adjusting the air pressure in the cylinder 252, the piston 254 and the second stage 270 can be moved in the height direction (z direction). In addition, through the above-mentioned structure, the first lifting mechanism 231 can move both the first stage 232 and the second stage 270 in the height direction (z direction), and the second lifting mechanism 233 can move the second stage 270 in the height direction (z direction) relative to the first stage 232. In addition, the first stage 232 and the second stage 270 can move in two directions (xy directions) that are orthogonal in the horizontal plane through the XY stage 248. In addition, the first stage 232 and the second stage 270 can rotate in the horizontal plane (centered on the z axis) by rotating the stage 250. Therefore, when the substrate WF is transferred between the pusher 230 and the top ring 302 described later, the pusher 230 and the top ring 302 can be aligned. In the illustrated embodiment, the first lifting mechanism 231 and the second lifting mechanism 233 are pneumatic lifting mechanisms, but these lifting mechanisms may be hydraulic, or may be electric lifting mechanisms using motors and ball screws.

[0044] The first lifting mechanism 231 allows the first stage 232 and the second stage 270 to move between a lower position and an upper position. Figure 6 It means that the first stage 232 and the second stage 270 are located at the lower position. Figure 6 The ends of the support columns 234 of the first stage 232 and the ends of the support columns 272 of the second stage 270 are located at positions lower than the surface of the transport roller 202 that supports the substrate WF. Figure 7 This indicates that the first stage 232 and the second stage 270 are located at the upper position. When the first stage 232 and the second stage 270 are located at the upper position, the end of the support column 234 of the first stage 232 and the end of the support column 272 of the second stage 270 are located at a position higher than the substrate supporting surface of the conveying roller 202. That is, when the first stage 232 and the second stage 270 move from the lower position to the upper position, the substrate WF disposed on the conveying roller 202 can be pushed up by the second stage 270 to be collected. Figure 8 This means that the first stage 232 and the second stage 270 are located at the upper position, and the second stage 270 is located at a position raised relative to the first stage 232. When the pusher 230 transfers the substrate WF to the top ring 302 described later, as shown in FIG. Figure 8 As shown, the second stage 270 holding the substrate WF is raised relative to the first stage 232 .

[0045] In one embodiment, the transport unit 200 includes a sensor 262 (see FIG. 26A ) for detecting the thickness of the substrate WF transferred from the pusher 230 to the top ring 302. Figure 4 , Figures 6 to 8 The sensor 262 may be formed as any type of sensor, and may be, for example, an optical distance measuring sensor. The information obtained by the sensor 262 is sent to the control device 900. Figures 6 to 8 In the example shown, the sensor 262 is an image sensor installed on the frame 201, and the shooting direction is oriented in the horizontal direction. The control device 900 calculates the movement amount Dh of the second stage 270 holding the substrate WF relative to the first stage 232 when the substrate WF is transferred from the pusher 230 to the top ring 302 based on the camera data obtained by the sensor 262. Next, the control device 900 is configured to detect the thickness of the substrate WF based on the calculated movement amount Dh. Among them, the sensor 262 is not limited to this example, and various well-known sensors such as a laser sensor, a potentiometer, an overcurrent sensor, an acceleration sensor, and a linear scale sensor for detecting the movement amount Dh of the second stage 270 relative to the first stage 232 can be used. In addition, the sensor 262 can also be mounted on the pusher 230 instead of being mounted on the frame 201, or the sensor 262 is mounted on the frame 201 and is also mounted on the pusher 230. In addition, multiple sensors 262 can also be provided.

[0046] Figure 4 The transport unit 200 shown has a cleaning section. Figure 4 As shown, the cleaning section has a cleaning nozzle 284. The cleaning nozzle 284 has: an upper cleaning nozzle 284a arranged on the upper side of the conveying roller 202, and a lower cleaning nozzle 284b arranged on the lower side. The upper cleaning nozzle 284a and the lower cleaning nozzle 284b are connected to a cleaning liquid supply source not shown. The upper cleaning nozzle 284a is configured to supply cleaning liquid to the upper surface of the substrate WF conveyed on the conveying roller 202. The lower cleaning nozzle 284b is configured to supply cleaning liquid to the lower surface of the substrate WF conveyed on the conveying roller 202. The upper cleaning nozzle 284a and the lower cleaning nozzle 284b are configured to have a width that is the same as or greater than the width of the substrate WF conveyed on the conveying roller 202, and the entire surface of the substrate WF is cleaned as the substrate WF is conveyed on the conveying roller 202. As shown in FIG. Figure 4 As shown, the cleaning part is located at the downstream side of the substrate delivery location of the pusher 230 of the conveying unit 200 .

[0047] like Figure 4 As shown, in the cleaning section, a pressure roller 290 is arranged on the conveying roller 202. In addition, a sensor 216d is arranged near the entrance of the cleaning section. In one embodiment, if the substrate WF is detected by the sensor 216d, the cleaning liquid can be sprayed from the cleaning nozzle 284 to start the cleaning of the substrate WF. In addition, during the cleaning of the substrate WF, the rotation speed of the conveying roller 202 can be set to the speed for cleaning. Figure 4 In an embodiment, the sensor 216f is disposed near the exit point of the cleaning section. In one embodiment, if the substrate WF is detected by the sensor 216f, the spraying of the cleaning liquid from the cleaning nozzle 284 can be stopped. During the cleaning of the substrate WF, the substrate WF is transported by sandwiching it between the transport roller 202 and the pressure roller 290, so that the substrate WF can be stably transported even during the spraying of the cleaning liquid.

[0048] like Figure 4 As shown, the conveying unit 200 has an openable and closable exit gate 286. In addition, the conveying unit 200 has a sensor 216g near the exit. In one embodiment, if the substrate WF is detected by the sensor 216g, the exit gate 286 is opened to convey the substrate WF to the next unit. In one embodiment, if the substrate WF is detected by the sensor 216g, the exit gate 286 is not opened, and the conveying roller 202 stops conveying the substrate WF, waiting for the processing of the next unit, and after the next unit is ready to receive the substrate, the exit gate 286 is opened to convey the substrate WF to the next unit.

[0049] <Grinding unit>

[0050] Fig. 9This is a perspective view schematically showing a polishing unit 300 according to an embodiment. Figure 1 The substrate polishing apparatus 1000 shown in the figure includes two polishing units 300A and 300B. The two polishing units 300A and 300B may have the same structure, and therefore will be collectively described as the polishing unit 300 below.

[0051] like Fig. 9 As shown, the polishing unit 300 includes a polishing table 350 and a top ring 302 constituting a polishing head that holds a substrate as a polishing object and presses the substrate against a polishing surface on the polishing table 350. The polishing table 350 is connected to a polishing table rotating motor (not shown) disposed below the polishing table 350 via a table shaft 351 and can rotate around the table shaft 351. A polishing pad 352 is attached to the upper surface of the polishing table 350, and a surface 352a of the polishing pad 352 constitutes a polishing surface for polishing the substrate.

[0052] A polishing liquid supply nozzle 354 is provided above the polishing table 350, and the polishing liquid is supplied to the polishing pad 352 on the polishing table 350 through the polishing liquid supply nozzle 354. Fig. 9 As shown, a passage 353 for supplying polishing liquid is provided on the polishing table 350 and the platform shaft 351. The passage 353 is connected to an opening 355 on the surface of the polishing table 350. A through hole 357 is formed on the polishing pad 352 at a position corresponding to the opening 355 of the polishing table 350, and the polishing liquid passing through the passage 353 is supplied from the opening 355 of the polishing table 350 and the through hole 357 of the polishing pad 352 to the surface of the polishing pad 352. Among them, the opening 355 of the polishing table 350 and the through hole 357 of the polishing pad 352 may be one or more, or may not be provided.

[0053] The top ring 302 is connected to the top ring shaft 18, and the top ring shaft 18 is moved up and down relative to the swing arm 360 by the up and down movement mechanism 319. The top ring 302 as a whole is moved up and down relative to the swing arm 360 and positioned by the up and down movement of the top ring shaft 18. The top ring shaft 18 is rotated by the driving of a top ring rotation motor (not shown). The top ring 302 rotates around the top ring shaft 18 by the rotation of the top ring shaft 18. A rotary joint 323 is attached to the upper end of the top ring shaft 18.

[0054] The top ring 302 can hold the substrate on its lower surface. The swing arm 360 is configured to be able to rotate around the support shaft 362. The top ring 302 can move between the substrate handover position of the above-mentioned conveying unit 200 and the upper part of the grinding table 350 by rotating the swing arm 360. By lowering the top ring shaft 18, the top ring 302 can be lowered to press the substrate against the surface (grinding surface) 352a of the grinding pad 352. At this time, the top ring 302 and the grinding table 350 are rotated respectively, and the grinding liquid is supplied to the grinding pad 352 from the grinding liquid supply nozzle 354 provided above the grinding table 350 and / or from the opening 355 provided on the grinding table 350. As shown above, the substrate can be pressed against the grinding surface 352a of the grinding pad 352 to grind the surface of the substrate.

[0055] The vertical movement mechanism 319 for vertically moving the top ring shaft 18 and the top ring 302 includes: a bridge 28 for rotatably supporting the top ring shaft 18 via a bearing 321; a ball screw 32 mounted on the bridge 28; a support table 29 supported by a support column 130; and an AC servo motor 38 provided on the support table 29. The support table 29 supporting the servo motor 38 is fixed to the swing arm 360 via the support column 130.

[0056] The ball screw 32 includes: a screw shaft 32a connected to the servo motor 38; and a nut 32b screwed with the screw shaft 32a. The top ring shaft 18 and the bridge 28 are formed as a whole and move up and down. Therefore, when the servo motor 38 is driven, the bridge 28 moves up and down via the ball screw 32, thereby the top ring shaft 18 and the top ring 302 move up and down. The grinding unit 300 includes a position detection unit that detects the distance to the lower surface of the bridge 28, that is, detects the position of the bridge 28 as a distance sensor 70. The position of the bridge 28 is detected by the distance sensor 70, thereby detecting the position of the top ring 302. The distance sensor 70, together with the ball screw 32 and the servo motor 38, constitutes the up and down moving mechanism 319. Among them, the distance sensor 70 can also be a laser sensor, an ultrasonic sensor, an overcurrent sensor, or a linear scale sensor. In addition, each device in the polishing unit including the distance measuring sensor 70 and the servo motor 38 is controlled by the control device 900 .

[0057] The polishing unit 300 of one embodiment includes a dressing unit 356 for dressing the polishing surface 352a of the polishing pad 352. The dressing unit 356 includes: a dresser 50 in sliding contact with the polishing surface 352a; a dresser shaft 51 connected to the dresser 50; an air cylinder 53 provided at the upper end of the dresser shaft 51; and a swing arm 55 supporting the dresser shaft 51 so as to be rotatable. The lower part of the dresser 50 is constituted by a dressing member 50a, and needle-shaped diamond particles are attached to the lower surface of the dressing member 50a. The air cylinder 53 is arranged on a support table 57 supported by pillars 56, and these pillars 56 are fixed to the swing arm 55.

[0058] The swing arm 55 is configured to be driven by a motor (not shown) and to swing around the support shaft 58. The dresser shaft 51 is driven and rotated by the motor (not shown), and the dresser 50 rotates around the dresser shaft 51 by the rotation of the dresser shaft 51. The air cylinder 53 moves the dresser 50 up and down via the dresser shaft 51, and presses the dresser 50 against the polishing surface 352a of the polishing pad 352 with a predetermined pressing force.

[0059] The dressing of the grinding surface 352a of the grinding pad 352 is performed as follows. The dresser 50 is pressed against the grinding surface 352a by the air cylinder 53, and at the same time, pure water is supplied to the grinding surface 352a by a pure water supply nozzle not shown. In this state, the dresser 50 is rotated around the dresser shaft 51, and the swing arm 55 is swung on the grinding surface 352a, so that the lower surface (diamond particles) of the dressing component 50a slides and contacts the rotating grinding surface 352a. As shown above, the grinding pad 352 is cut by the dresser 50, and the grinding surface 352a is dressed.

[0060] In the polishing device of the present embodiment, the dresser 50 is used to measure the wear amount of the polishing pad 352. That is, the dresser unit 356 is provided with a displacement sensor 60 for measuring the displacement of the dresser 50. The displacement sensor 60 constitutes a wear amount detection means for detecting the wear amount of the polishing pad 352, and is provided on the upper surface of the swing arm 55. A target plate 61 is fixed to the dresser shaft 51, and the target plate 61 moves up and down as the dresser 50 moves up and down. The displacement sensor 60 is configured to be inserted through the target plate 61, and the displacement of the dresser 50 is measured by measuring the displacement of the target plate 61. Among them, as for the displacement sensor 60, all types of sensors such as a linear scale, a laser sensor, an ultrasonic sensor, or an eddy current sensor are used.

[0061] In the present embodiment, the amount of wear of the polishing pad 352 is measured as follows. First, the air cylinder 53 is driven to make the dresser 50 abut against the polishing surface 352a of the polishing pad 352 that has been initially dressed. In this state, the displacement sensor 60 detects the initial position (initial value of height) of the dresser 50, and stores the initial position (initial value of height) in the control device 900. Then, after the polishing process of one or more substrates is completed, the dresser 50 is again made to abut against the polishing surface 352a, and the position of the dresser 50 is measured in this state. The position of the dresser 50 is displaced downward according to the amount of wear of the polishing pad 352, so the control device 900 can obtain the amount of wear of the polishing pad 352 by obtaining the difference between the initial position and the position of the dresser 50 after grinding. As shown above, the amount of wear of the polishing pad 352 is obtained based on the position of the dresser 50.

[0062] Next, the top ring 302 in the polishing unit 300 according to one embodiment will be described. Fig.10 1 is a schematic cross-sectional view of a top ring 302 for holding a substrate as a polishing object and pressing the substrate against a polishing surface on a polishing pad according to one embodiment. Fig.10 In the figure, only main components constituting the top ring 302 are schematically illustrated.

[0063] like Fig.10 As shown, the top ring 302 includes: a top ring body 2 that presses the substrate WF against the polished surface 352a; and a retainer component 3 that directly presses the polished surface 352a. The top ring body 2 is composed of a substantially quadrilateral flat plate-shaped component, and the retainer component 3 is mounted on the outer periphery of the top ring body 2. The top ring body 2 is formed of a resin such as an engineering plastic (for example, PEEK). An elastic film (film) 4 that contacts the back side of the substrate is mounted on the lower surface of the top ring body 2. In one embodiment, the elastic film (film) 4 is formed of a rubber material having excellent strength and durability, such as ethylene propylene rubber (EPDM), polyurethane rubber, and silicone rubber. In one embodiment, the elastic film (film) 4 can be formed of a rubber material using a mold.

[0064] The elastic film (film) 4 has a plurality of concentric partition walls 4a, and a circular central chamber 5, an annular bellows chamber 6 surrounding four sides of the central chamber 5, an annular intermediate chamber 7 surrounding four sides of the bellows chamber 6, an annular outer chamber 8 surrounding four sides of the intermediate chamber 7, and an annular edge chamber 9 surrounding four sides of the outer chamber 8 are formed between the upper surface of the elastic film 4 and the lower surface of the top ring body 2 by these partition walls 4a. That is, the central chamber 5 is formed in the central portion of the top ring body 2, and the bellows chamber 6, the intermediate chamber 7, the outer chamber 8, and the edge chamber 9 are concentrically formed in order from the center toward the outer circumference. A plurality of vacuum suction holes (not shown) are formed in the elastic film 4, which are connected to the bellows chamber 6 and are used to vacuum-suction the substrate WF to the top ring 302. The vacuum suction holes are connected to a vacuum source (not shown), and the substrate WF can be vacuum-suctioned relative to the elastic film 4 of the top ring 302 through the vacuum suction holes.

[0065] In addition, a holder member pressurizing chamber 10 made of an elastic film is also formed on the holder member 3. The central chamber 5, the bellows chamber 6, the middle chamber 7, the outer chamber 8, the edge chamber 9, and the holder member pressurizing chamber 10 are connected to a pressure adjustment unit (not shown) through flow paths 11 to 16. With the above-described structure, the pressing force of the substrate WF against the polishing pad 352 can be adjusted for each region of the substrate WF, and the pressing force of the holder member 3 against the polishing pad 352 can be adjusted.

[0066] <Drying unit>

[0067] The drying unit is a device for drying the substrate WF. Figure 1In the substrate polishing apparatus 1000 shown in FIG. 1 , the drying unit 500 dries the substrate WF that has been cleaned in the cleaning section of the conveying unit 200 after being polished in the polishing unit 300 . Figure 1 As shown, the drying unit 500 is disposed downstream of the conveying unit 200 .

[0068] The drying unit 500 has a nozzle 530 for spraying gas toward the substrate WF being transported on the transport roller 202. The gas may be, for example, compressed air or nitrogen. In the illustrated embodiment, the nozzle 530 may also include: a lower nozzle configured to spray gas from the lower side of the transport roller 202 to the lower surface of the substrate WF; and a nozzle configured to spray gas from the upper side of the transport roller 202 to the upper surface of the substrate WF. Among them, the lower nozzle and the upper nozzle may be provided one each, or a plurality of nozzles may be provided along the transport direction of the substrate WF. In addition, as the form of each nozzle 530, it may be a slit shape in which the gas supply port is extended to the width of the substrate WF.

[0069] <Removal unit>

[0070] The unloading unit 600 is a unit for carrying out the substrate WF after being polished and cleaned to the outside of the substrate polishing apparatus 1000. Figure 1 In the substrate polishing apparatus 1000 shown in FIG. 1 , the unloading unit 600 receives the substrate dried in the drying unit 500 . Figure 1 As shown, the unloading unit 600 is arranged downstream of the drying unit 500 .

[0071] <Substrate polishing method>

[0072] Next, a substrate polishing method performed by the substrate polishing apparatus 1000 in this embodiment will be described. Fig.11 1 is a flowchart showing a substrate polishing method according to an embodiment of the present invention. The substrate polishing method reads a program stored in the storage device 900 a and is mainly executed by the control device 900 . As an example, the substrate polishing method is executed when the substrate WF is loaded into the loader unit 100 .

[0073] <Acquisition steps>

[0074] In the substrate polishing method, the control device 900 first obtains information about the thickness of the substrate WF as the polishing object (step S12). Here, as an example, the information about the thickness of the substrate WF may be the thickness of the substrate WF itself, or may be information indicating the thickness of the substrate WF. Hereinafter, the information about the thickness of the substrate WF is sometimes referred to as "thickness information". The thickness information of the substrate WF, as an example, can be obtained using at least one of the acquisition steps described below.

[0075] <Acquisition Step 1>

[0076] The control device 900 may obtain the thickness information of the substrate WF based on the detection signal input from the sensor 260 provided in the loading unit 100 (or the conveying unit 200) (refer to Figure 2 , Figure 3 ). In this acquisition step, the thickness of the substrate WF on the conveying roller 202 is acquired. The acquisition of the thickness information of the substrate WF by the sensor 260 can also be performed while the substrate WF is moved by the conveying roller 202. Alternatively, the thickness information of the substrate WF obtained by the sensor 260 can be acquired while the conveying by the conveying roller 202 is stopped. The sensor 260 can also detect multiple parts of the substrate WF in the conveying direction by the conveying roller 202. In this case, the control device 900 can also acquire the average value of the multiple parts of the substrate WF as the thickness information.

[0077] <Acquisition Step 2>

[0078] The control device 900 may also obtain the thickness information of the substrate WF when the pusher 230 delivers the substrate WF to the top ring 302. The control device 900 may obtain the thickness information of the substrate WF based on the distance that the pusher 230 moves to deliver the substrate WF to the top ring 302, which is, as a specific example, the movement amount Dh of the second stage 270 relative to the first stage 232 (see Figure 8 ), to obtain the thickness information of the substrate WF. As a specific example, the control device 900 can obtain the thickness information of the substrate WF based on the detection signal input from the sensor 262 provided in the conveying unit 200 (refer to Figures 4 to 8 ).

[0079] <Acquisition Step 3>

[0080] The control device 900 may also obtain the thickness information of the substrate WF by bringing the top ring 302 holding the substrate WF to be polished into contact with the polishing table 350. As an example, the acquisition step may be performed together with a pad search performed by the top ring 302. Here, the pad search is a process of detecting the height (position) of the surface of the polishing pad 352. The pad search performed by the top ring is a pad search performed by detecting the height position of the top ring 302 when the lower surface of the top ring 302 contacts the surface (polishing surface) of the polishing pad 352, and the servo motor 38 is driven to lower the top ring 302 while accumulating and adding the number of rotations through the encoder. When the lower surface of the top ring 302 contacts the surface of the polishing pad 352, the load on the servo motor 38 increases, and the current flowing through the servo motor 38 increases. Therefore, the current flowing through the servo motor 38 is detected by the current detector of the control device 900, and when the current increases, it is determined that the lower surface of the top ring 302 contacts the surface of the polishing pad 352. If it is determined that the lower surface of the top ring 302 contacts the surface of the polishing pad 352, the control device 900 obtains the height of the surface of the polishing pad 352 based on the sum value of the encoder of the servo motor 38. In such a pad search, the control device 900 can also obtain the thickness information of the substrate WF together with the height of the surface of the polishing pad 352. As an example, the thickness information of the substrate WF can also be obtained by detecting the distance between the substrate WF and the polishing pad 352 when the lower surface of the top ring 302 contacts the surface of the polishing pad 352. In addition, as another example, the thickness information of the substrate WF can also be obtained by making the surface of the substrate WF contact the polishing pad 352. At this time, the expansion amount (supply fluid amount) of the partition wall 4a of the elastic film (thin film) 4 can also be considered. In addition, the control device 900 can also obtain the thickness information of the substrate WF based on the difference between the reference (base) height of the state where the substrate WF is not held and the detection height of the state where the substrate WF is held. That is, as an example, the control device 900 brings the top ring 302 into contact with the polishing table 350 without holding the substrate WF, and obtains the height position of the top ring 302 at this time as a reference height. Next, the control device 900 brings the top ring 302 into contact with the polishing table 350 while holding the substrate WF, and obtains the height position of the top ring 302 at this time as a detection height. Next, the control device 900 may obtain the difference between the obtained reference height and the detection height as the thickness information of the substrate WF. In addition, the acquisition of the thickness information of the substrate WF in step 3 may also be performed based on detection by a sensor provided on the top ring 302. As an example, the top ring 302 may also have a sensor 264 provided on the retainer component 3 as a sensor for detecting the distance between the substrate WF and the polishing pad 352, or a sensor for detecting the expansion amount of the elastic membrane 4 when the substrate WF is in contact with the polishing pad 352 (refer to Fig.10). The sensor 264 may be a sensor of any form, such as an optical distance measuring sensor. In addition, the sensor 264 may also be arranged on the grinding table 350. As an example, the sensor 264 may be arranged on the lower part of the grinding table 350, and an opening through which the detection light of the sensor 264 can pass is formed between the grinding table 350 and the grinding pad 352. In this case, a window component through which the detection light can pass may be arranged at the opening between the grinding table 350 and the grinding pad 352. The window component may be composed of a material having light permeability, specifically, a light-permeable component composed of a transparent material (such as transparent plastic or transparent glass, etc.). By configuring the window component, pure water or grinding liquid can be prevented from splashing onto the sensor 264. Among them, in order to obtain the thickness information of the substrate WF, it is better to make the top ring 302 and the grinding pad 352 contact when the top ring 302 or the substrate WF is brought into contact with the grinding pad 352 when the top ring 302 and the grinding pad 352 are not rotated.

[0081] <Acquisition Step 4>

[0082] If the user recognizes the thickness information of the substrate WF in advance, the thickness information can also be stored in the storage device 900a of the control device 900 through external input. In the case shown above, the control device 900 can obtain the thickness information of the substrate WF by reading the thickness information of the substrate WF stored in the storage device 900a. In addition, as an example, if a plurality of the same substrates WF are continuously put into the substrate polishing device 1000, the thickness information of one or more substrates WF is obtained, and the thickness information obtained first can also be used for the subsequent substrates WF.

[0083] <Position adjustment steps>

[0084] When the control device 900 obtains the thickness information of the substrate WF, the height position of the top ring 302 relative to the polishing table 350 is calculated based on the obtained thickness information (S14). As a specific example, the control device 900 can calculate the optimal position of the top ring 302 before polishing according to the height of the surface of the polishing pad 352. The optimal position of the top ring 302 can be set as follows: based on the thickness information of the substrate WF, the film height defined as the gap between the top ring body 2 and the elastic film (film) 4 is within a predetermined desired range. When the position of the top ring 302 relative to the polishing pad 352 is adjusted in consideration of the thickness of the substrate WF, when the thickness of the substrate WF is large, the distance (film height MH) between the substrate WF and the polishing pad 352 becomes small, and when the thickness of the substrate WF is small, the distance between the substrate WF and the polishing pad 352 becomes large. Therefore, in this embodiment, the control device 900 calculates the height position of the top ring 302 based on the thickness information of the substrate WF. Specifically, the height position of the top ring 302 may be calculated such that the greater the thickness of the substrate WF, the greater the distance between the top ring body 2 and the polishing pad 352 ; and the smaller the thickness of the substrate WF, the smaller the distance between the top ring body 2 and the polishing pad 352 . Fig.12 is a cross-sectional view showing a top ring and a polishing pad when the thickness of a substrate is relatively small according to an embodiment. Fig.13 1 is a cross-sectional view of a top ring and a polishing pad when the thickness of a substrate is relatively large according to an embodiment. Fig.12 and Fig.13 As shown, the control device 900 may calculate the height position of the top ring 302 in consideration of the thickness information of the substrate WF so that the film height MH is within a substantially constant range.

[0085] Refer again Fig.11 Next, the control device 900 adjusts the height position of the top ring 302 relative to the polishing table 350 so as to achieve the calculated height position of the top ring (step S16). Next, the control device 900 rotates the polishing table 350 and the top ring 302 while pressing the substrate WF against the polishing pad 352 to polish the substrate WF (step S18).

[0086] In addition, the control device 900 may grind the substrate WF only in one of the grinding units 300A and 300B, or may grind the same substrate WF in two stages in the grinding units 300A and 300B. If the substrate WF is to be grinded in two stages, the height position of the top ring 302 relative to the grinding table 350 of the grinding unit 300B may be adjusted based on the thickness information of the substrate WF acquired before the grinding of the substrate WF in the grinding unit 300A and the grinding amount of the substrate WF in the grinding unit 300A, or based on the thickness information of the substrate WF acquired in the conveying unit 200B before the grinding of the substrate WF in the grinding unit 300B. In this way, the position of the top ring 302 may be adjusted to an appropriate position during the second stage of grinding, i.e., the grinding of the grinding unit 300B. As an example, the polishing amount in the polishing unit 300A may use a numerical value preset by simulation or the like, or may be calculated based on the polishing time required by the polishing unit 300A, the amount of pressure fluid applied to the elastic film 4, or the like.

[0087] When the substrate WF is polished by the polishing unit 300, the arm 360 is swung to move the top ring 302 holding the substrate WF to the substrate delivery position of the conveying unit 200. Then, the vacuum adsorption of the top ring 302 is released, and the support column 272 of the second stage 270 supports the substrate WF. Then, the pusher 230 is lowered to deliver the substrate WF to the conveying roller 202 (see Figure 6 ).

[0088] In addition, when the polishing of the substrate WF by the polishing unit 300 is completed, the polishing pad 352 is dressed and cleaned using the dressing unit 356 and the sprayer 358 in the polishing unit 300. In this case, the wear amount of the polishing pad 352 can be measured by the dresser 50 as described above. In addition, the control device 900 can also adjust the height position of the top ring 302 ( Fig.11: S14, S16), and correct the wear amount of the polishing pad 352. As an example, the control device 900 may also calculate the height position of the top ring 302 in a manner that becomes lower corresponding to the distance of the wear amount of the polishing pad 352 measured previously for the polishing process of a continuous new substrate WF. Among them, in the polishing unit 300, the polishing pad 352 may be dressed and cleaned each time a substrate WF is polished, and the polishing pad 352 may be dressed and cleaned each time a plurality of substrates WF are polished. In addition, the control device 900 may estimate the wear amount of the polishing pad 352 when polishing one substrate WF based on the wear amount of the polishing pad 352 measured by the dresser 50 or based on the wear amount of the polishing pad 352 pre-set by the polishing recipe, and may estimate the current wear amount of the polishing pad 352. In addition, as an example, the control device 900 may also estimate the wear amount of the polishing pad 352 when polishing one substrate WF by accumulating past data and averaging them. Next, the control device 900 may also estimate the wear amount of the polishing pad 352 when adjusting the height position of the top ring 302 ( Fig.11 : S14, S16), the height position is corrected based on the estimated wear amount of the polishing pad 352.

[0089] When the substrate WF is transferred from the polishing unit 300 to the transport unit 200, the transport roller 202 is started to move again to transport the substrate WF. When cleaning the substrate WF, the rotation speed of the transport roller 202 may be changed to a speed for cleaning. While the substrate WF is transported by the transport roller 202, the cleaning liquid is sprayed toward the substrate WF from the upper cleaning nozzle 284a and the lower cleaning nozzle 284b to clean the substrate WF.

[0090] Next, the substrate WF is transported from the transport unit 200 to the drying unit 500 and dried, and then transported to the unloading unit 600. The substrate WF transported to the unloading unit 600 is transported to the exit by the transport rollers 202 and transported to the outside of the substrate polishing apparatus 1000.

[0091] In the substrate processing method described above, the thickness information of the substrate WF is obtained, and based on the obtained thickness information of the substrate WF, the position of the top ring 302 relative to the polishing table 350 is adjusted to polish the substrate WF. Thus, appropriate polishing processing can be performed for substrates WF of various sizes.

[0092] The above-mentioned substrate processing method is preferably performed without discharging the substrate WF from the unloading unit 600, that is, without discharging the substrate WF from the processing line including the conveying unit 200. In this way, the time required for the substrate polishing process can be shortened.

[0093] The present invention can also be described in the following aspects.

[0094] [Method 1] According to method 1, a substrate polishing method is proposed, which is a substrate polishing method performed by a polishing device, the polishing device comprising: a polishing table having a polishing surface, a top ring for holding a substrate and pressing the substrate against the polishing surface, a vertical movement mechanism for moving the top ring up and down, and a sensor for acquiring information about the thickness of the substrate. The top ring has a thin film and a top ring body, the thin film is an elastic film forming a pressure chamber to which a pressure fluid is supplied, and the top ring body holds the thin film, the top ring is configured to press the substrate against the polishing surface by supplying a pressure fluid to the pressure chamber, and the substrate polishing method includes the following steps: an acquisition step of acquiring information about the thickness of the substrate by the sensor; a position adjustment step of adjusting the height position of the top ring relative to the polishing table based on the acquired information about the thickness of the substrate; and a polishing step of pressing the substrate against the polishing surface by supplying a pressure fluid to the pressure chamber, thereby polishing the substrate.

[0095] According to the first aspect, by adjusting the height position of the top ring relative to the polishing table based on the thickness of the substrate, polishing can be performed on substrates of various sizes.

[0096] [Mode 2] According to Mode 2, in Mode 1, the obtaining step is performed by bringing the top ring holding the substrate into contact with the polishing table.

[0097] [Mode 3] According to Mode 3, in Mode 2, the polishing device includes a polishing table rotating mechanism for rotating the polishing table, and the acquiring step is performed in a state where the polishing table is not rotating.

[0098] [Mode 4] According to Mode 4, in Mode 1, the polishing device includes a pusher that transfers the substrate between the pusher and the top ring, and the acquiring step is performed when the substrate is transferred from the pusher to the top ring.

[0099] [Mode 5] According to Mode 5, in Mode 4, in the acquisition step, information on the thickness of the substrate is acquired based on the distance the pusher moves in order to transfer the substrate to the top ring.

[0100] [Method 6] According to Method 6, in Method 1, the polishing device has a loading unit or a conveying unit, and the loading unit or the conveying unit is configured to convey the substrate. In the acquisition step, information about the thickness of the substrate is acquired by a sensor provided in the loading unit or the conveying unit.

[0101] [Method 7] According to method 7, in methods 1 to 6, the polishing device has a processing line, the processing line has a conveying unit for conveying the substrate, and the acquisition step, the position adjustment step and the polishing step are performed without moving the substrate out of the processing line.

[0102] [Mode 8] According to Mode 8, in Mode 1, the acquisition step is performed by external input to the grinding device.

[0103] [Method 9] According to method 9, in methods 1 to 6, after the grinding step, the following steps are included: a second position adjustment step, adjusting the height position of the second top ring relative to the second grinding table based on the information about the thickness of the substrate acquired in the acquisition step and the grinding amount of the substrate performed by the grinding step; and a second grinding step, grinding the substrate by pressing the substrate against the grinding surface of the second grinding table.

[0104] [Method 10] According to method 10, a program is proposed for causing a processing device of a polishing device to perform a control process, wherein the control process performs a polishing process on a processing surface of a substrate. The polishing device comprises: a polishing table having a polishing surface, a top ring for holding a substrate and pressing the substrate against the polishing surface, a vertical movement mechanism for moving the top ring up and down, and a sensor for acquiring information about the thickness of the substrate, wherein the top ring comprises a thin film and a top ring body, wherein the thin film is an elastic film forming a pressure chamber to which a pressure fluid is supplied, and the top ring body holds the thin film, wherein the top ring is configured to press the substrate against the polishing surface by supplying a pressure fluid to the pressure chamber, and wherein the control process comprises the following steps: an acquisition step of acquiring information about the thickness of the substrate by the sensor; a position adjustment step of adjusting the height position of the top ring relative to the polishing table based on the acquired information about the thickness of the substrate; and a polishing step of pressing the substrate against the polishing surface by supplying a pressure fluid to the pressure chamber, thereby polishing the substrate.

[0105] According to aspect 10, by adjusting the height position of the top ring relative to the polishing table based on the thickness of the substrate, polishing can be performed on substrates of various sizes.

[0106] [Method 11] According to method 11, a substrate polishing device is proposed, comprising: a polishing table having a polishing surface; a top ring for holding a substrate and pressing the substrate against the polishing surface, the top ring having a thin film and a top ring body, the thin film being an elastic film forming a pressure chamber to which a pressure fluid is supplied, the top ring body holding the thin film, the top ring being configured to press the substrate against the polishing surface by supplying a pressure fluid to the pressure chamber; an up-and-down moving mechanism that moves the top ring up and down; a sensor for obtaining information about the thickness of the substrate; and a control device, the control device being configured to adjust the height position of the top ring relative to the polishing table based on the information about the thickness of the substrate obtained by the sensor, supply a pressure fluid to the pressure chamber to press the substrate against the polishing surface, and thereby polish the substrate.

[0107] According to aspect 11, by adjusting the height position of the top ring relative to the polishing table based on the thickness of the substrate, polishing can be performed on substrates of various sizes.

[0108] The above describes the embodiments of the present invention, but the embodiments of the above invention are used to facilitate the understanding of the present invention and are not intended to limit the present invention. The present invention can be changed and improved without departing from its gist, and it goes without saying that the present invention includes its equivalents. In addition, in the scope of at least a part of the above-mentioned problem that can be solved, or in the scope of at least a part of the effect that can be achieved, it can be any combination of the embodiments and the modified examples, and it can be any combination or omission of the constituent elements described in the scope of the patent application and the specification.

[0109] The present invention claims priority based on Japanese Patent Application No. 2022-081873 filed on May 18, 2022. All disclosures including the specification, claims, figures, and abstract of Japanese Patent Application No. 2022-081873 are incorporated herein by reference as a whole. All disclosures including the specification, claims, figures, and abstract of Japanese Patent Application No. 2003-103458 (Patent Document 1), Japanese Patent Application No. 2014-176950 (Patent Document 2), and Japanese Patent Application No. 2010-46756 (Patent Document 3) are incorporated herein by reference as a whole.

[0110] Explanation of symbols

[0111] 3: retainer component, 100: loading unit, 200: conveying unit, 230: pusher, 231: first lifting mechanism, 232: first carrier, 233: second lifting mechanism, 260: sensor, 262: sensor, 264: sensor, 270: second carrier, 272: supporting column, 300: grinding unit, 302: top ring, 350: grinding table, 352: grinding pad, 500: drying unit, 600: unloading unit, 900: control device, 900a: storage device, 1000: substrate grinding device, WF: substrate.

Claims

1. A substrate polishing method, which is performed by a polishing device, the polishing device comprising: a polishing table having a polishing surface, a top ring for holding a substrate and pressing the substrate against the polishing surface, a vertical movement mechanism for moving the top ring up and down, and a sensor for acquiring information about the thickness of the substrate, It is characterized in that The top ring includes a thin film and a top ring body, wherein the thin film is an elastic film forming a pressure chamber to which a pressure fluid is supplied, and the top ring body holds the thin film, and the top ring is configured to press the substrate against the polishing surface by supplying the pressure fluid to the pressure chamber. The substrate grinding method comprises the following steps: an acquisition step of acquiring information about the thickness of the substrate by means of the sensor; a position adjustment step of adjusting the height position of the top ring relative to the grinding table based on the acquired information about the thickness of the substrate; and In the polishing step, the pressure fluid is supplied to the pressure chamber to press the substrate against the polishing surface, thereby polishing the substrate.

2. The substrate polishing method according to claim 1, wherein: The acquiring step is performed by bringing the top ring holding the substrate into contact with the polishing table.

3. The substrate polishing method according to claim 2, wherein: The grinding device includes a grinding table rotating mechanism for rotating the grinding table. The obtaining step is performed when the grinding table is not rotating.

4. The substrate polishing method according to claim 1, wherein: The polishing device includes a pusher that receives and delivers the substrate between the pusher and the top ring. The acquiring step is performed when the substrate is handed over from the pusher to the top ring.

5. The substrate polishing method according to claim 4, wherein: In the acquiring step, information on the thickness of the substrate is acquired based on a distance that the pusher moves in order to hand over the substrate to the top ring.

6. The substrate polishing method according to claim 1, wherein: The polishing device includes a loading unit or a conveying unit configured to convey the substrate. In the acquisition step, information on the thickness of the substrate is acquired by a sensor provided at the loading unit or the conveying unit.

7. The substrate polishing method according to any one of claims 1 to 6, characterized in that: The polishing device includes a processing line having a conveying unit for conveying the substrate. The taking-in step, the position adjusting step, and the polishing step are performed without unloading the substrate from the processing line.

8. The substrate polishing method according to claim 1, wherein: The acquiring step is performed via an external input to the grinding device.

9. The substrate polishing method according to any one of claims 1 to 6, characterized in that: After the grinding step, the following steps are included: a second position adjusting step of adjusting a height position of a second top ring relative to a second grinding table based on the information on the thickness of the substrate acquired in the acquiring step and the grinding amount of the substrate performed by the grinding step; and The second polishing step polishes the substrate by pressing the substrate against the polishing surface of the second polishing table.

10. A program for causing a processing device of a polishing device to perform a control process, wherein the control process performs a polishing process on a processing surface of a substrate, characterized in that: The polishing device includes: a polishing table having a polishing surface, a top ring for holding a substrate and pressing the substrate against the polishing surface, a vertical movement mechanism for moving the top ring up and down, and a sensor for acquiring information about the thickness of the substrate. The top ring includes a thin film and a top ring body, wherein the thin film is an elastic film forming a pressure chamber to which a pressure fluid is supplied, and the top ring body holds the thin film, and the top ring is configured to press the substrate against the polishing surface by supplying the pressure fluid to the pressure chamber. The control process comprises the following steps: an acquisition step of acquiring information about the thickness of the substrate by means of the sensor; a position adjustment step of adjusting the height position of the top ring relative to the grinding table based on the acquired information about the thickness of the substrate; and In the polishing step, the pressure fluid is supplied to the pressure chamber to press the substrate against the polishing surface, thereby polishing the substrate.

11. A substrate polishing device, characterized in that: have: a grinding table having a grinding surface; a top ring for holding a substrate and pressing the substrate against the grinding surface, the top ring comprising a thin film and a top ring body, the thin film being an elastic film forming a pressure chamber to which a pressure fluid is supplied, the top ring body holding the thin film, and the top ring being configured to press the substrate against the grinding surface by supplying a pressure fluid to the pressure chamber; An up-and-down moving mechanism, which moves the top ring up and down; a sensor for acquiring information about the thickness of the substrate; and A control device is configured to adjust the height position of the top ring relative to the polishing table based on information about the thickness of the substrate obtained by the sensor, supply pressure fluid to the pressure chamber to press the substrate against the polishing surface, and thereby polish the substrate.

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