Method of manufacturing thin film, thin film, and substrate processing apparatus

Abstract

The present invention relates to a method for manufacturing a thin film, a thin film, and a substrate processing apparatus, the method comprising: a first forming step of forming a first thin film layer on a substrate by spraying a first source gas containing a high dielectric constant (high k) material; a second forming step of forming a second thin film layer on the substrate by spraying a second source gas containing a high dielectric constant material; and a crystallization step of crystallizing at least one of the first thin film layer and the second thin film layer by using plasma.

Description

Technical Field

[0001] The present invention relates to a method of manufacturing a thin film on a substrate by performing a processing process such as a deposition process on the substrate, a thin film, and a substrate processing apparatus. Background Art

[0002] Generally, a thin film layer, a thin film circuit pattern, or an optical pattern should be formed on a substrate for manufacturing a semiconductor device, a display device, a solar cell, etc. For this purpose, a processing process is performed on the substrate, and examples of the processing process include a deposition process for depositing a thin film containing a specific material on the substrate, a photolithography process for selectively exposing a portion of the thin film by using a photosensitive material, an etching process for removing the selectively exposed portion of the thin film to form a pattern, etc. By performing such a processing process on the substrate, a thin film can be manufactured on the substrate.

[0003] Recently, semiconductor devices, display devices, and solar cells have been miniaturized and developed to have a thinner thickness, and for this reason, the thickness of the thin film should be thin. However, in a thin film implemented as an insulating layer between a semiconductor layer and a gate layer in a thin film transistor (TFT), as the thickness of the thin film becomes thinner, there is a problem of current leakage due to a tunneling phenomenon.

[0004] Therefore, although the thickness of the thin film is implemented to be thin, there is a need to develop a thin film for reducing current leakage. Summary of the invention

[0005] Technical issues

[0006] The present invention is to solve the above-mentioned problems and to provide a method of manufacturing a thin film and a thin film which can reduce current leakage despite having a thin thickness.

[0007] Technical Solution

[0008] In order to achieve the above objectives, the present invention may include the following elements.

[0009] According to the present invention, a method for manufacturing a thin film may include: a first forming step of spraying a first source gas containing a high-k dielectric material to form a first thin film layer on a substrate; a second forming step of spraying a second source gas containing a high-k dielectric material to form a second thin film layer on the substrate; and a crystallization step of crystallizing at least one of the first thin film layer and the second thin film layer by using plasma.

[0010] The thin film according to the present invention may include: a first thin film layer formed on a substrate by using a high-k dielectric material and crystallized by plasma; and a second thin film layer formed on the substrate by using the high-k dielectric material.

[0011] A substrate processing apparatus according to the present invention may include: a chamber; a substrate supporting unit that supports a substrate in the chamber; an upper dome that is disposed on an upper surface of the chamber; and an antenna that is disposed above the upper dome to generate inductively coupled plasma, wherein the upper dome may be formed of ceramic.

[0012] Beneficial Effects

[0013] According to the present invention, the following effects can be achieved.

[0014] The present invention can be implemented so that all of the first thin film layer and the second thin film layer are formed of a high-k dielectric material, and at least one of the first thin film layer and the second thin film layer is crystallized, so that although it is formed to have a thinner thickness, the current leakage can be further reduced. Therefore, the present invention can manufacture a thin film transistor that is finer and has a thinner thickness, and can further reduce the current leakage, thereby contributing to further improving the performance of the thin film transistor, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 is a schematic block diagram showing an embodiment of a substrate processing apparatus for performing a method of manufacturing a thin film according to the present invention.

[0016] Figure 2 is a schematic side sectional view of a spray unit that sprays a gas in an example of a substrate processing apparatus that performs the method of manufacturing a thin film according to the present invention.

[0017] Figure 3 is a schematic side cross-sectional view illustrating an example of a thin film transistor.

[0018] Figure 4 is a schematic flow chart of a method for manufacturing a thin film according to the present invention.

[0019] Figure 5 is a schematic side sectional view of a thin film manufactured by the method for manufacturing a thin film according to the present invention.

[0020] Figure 6 is a schematic flow chart of an embodiment of a method for manufacturing a thin film according to the present invention including a removing step.

[0021] Figure 7 and Figure 8 is a schematic flow chart of a first forming step and a first crystallization step in the method for manufacturing a thin film according to the present invention.

[0022] Fig. 9 and Fig.10 is a schematic flow chart of a second forming step and a second crystallization step in the method for manufacturing a thin film according to the present invention.

[0023] Fig.11 is a schematic side sectional view of an example in which only the first thin film layer is crystallized in the thin film manufactured by the method of manufacturing a thin film according to the present invention.

[0024] Fig.12 is a schematic side sectional view of an example in which only the second thin film layer is crystallized in the thin film manufactured by the method of manufacturing a thin film according to the present invention.

[0025] Fig.13 is a schematic flow chart of an embodiment of the method for manufacturing a thin film according to the present invention including a third forming step.

[0026] Fig.14 is a schematic side cross-sectional view of an embodiment in which a thin film manufactured by the method for manufacturing a thin film according to the present invention includes a first thin film layer, a second thin film layer, and a third thin film layer.

[0027] Fig.15 is a schematic block diagram showing another embodiment of a substrate processing apparatus for performing the method of manufacturing a thin film according to the present invention. DETAILED DESCRIPTION

[0028] Hereinafter, an embodiment of the method for manufacturing a thin film according to the present invention will be described in detail with reference to the accompanying drawings. When describing the embodiments of the present invention, when any structure is described as being formed "on" or "under" another structure, this description should be interpreted as including a case where a third structure is disposed between these structures, and a case where these structures are in contact with each other.

[0029] refer to Figures 1 to 4 According to the method for manufacturing a thin film of the present invention, a treatment process is performed on a substrate S to manufacture a thin film on the substrate S. The substrate S may be a silicon substrate, a glass substrate, a metal substrate, or the like.

[0030] The method of manufacturing a thin film according to the present invention may be performed by the substrate processing apparatus 1. Before describing an embodiment of the method of manufacturing a thin film according to the present invention, the substrate processing apparatus 1 will be described in detail below.

[0031] refer to Figure 1 and Figure 2 The substrate processing apparatus 1 may include a chamber 2 , a susceptor 3 , and a spray unit 4 .

[0032] The chamber 2 provides a processing space 100. A process of performing a processing process on a substrate S to manufacture a thin film on the substrate S may be performed in the processing space 100. The processing space 100 may be disposed in the chamber 2. An exhaust port (not shown) that exhausts gas from the processing space 100 may be coupled to the chamber 2. A susceptor 3 and an injection unit 4 may be disposed in the chamber 2.

[0033] The susceptor 3 supports the substrate S. The susceptor 3 may support one substrate S, or may support a plurality of substrates S. In the case where the susceptor 3 supports a plurality of substrates S, a process of sequentially performing a treatment process on the plurality of substrates S to manufacture a thin film on each substrate S may be performed. The susceptor 3 may be coupled to the chamber 2. The susceptor 3 may be disposed in the chamber 2.

[0034] The injection unit 4 injects gas toward the susceptor 3. The injection unit 4 may be connected to the gas storage unit 40. In this case, the injection unit 4 may inject gas supplied from the gas storage unit 40 toward the susceptor 3. The injection unit 4 may be disposed in the chamber 2. The injection unit 4 may be disposed opposite to the susceptor 3. The injection unit 4 may be disposed above the susceptor 3. The processing space 100 may be disposed between the injection unit 4 and the susceptor 3. The injection unit 4 may be coupled to a cover (not shown). The cover may be coupled to the chamber 2 to cover the upper portion of the chamber 2.

[0035] The injection unit 4 may include a first gas flow path 4a and a second gas flow path 4b.

[0036] The first gas flow path 4a is used to inject the first gas. One side of the first gas flow path 4a can be connected to the gas storage unit 40 by a pipe or a hose, etc. The other side of the first gas flow path 4a can be communicated with the processing space 100. Therefore, the first gas supplied from the gas storage unit 40 can flow along the first gas flow path 4a, and then can be injected into the processing space 100 through the first gas flow path 4a. The first gas flow path 4a can be used as a flow path that enables the first gas to flow, and can be used as an injection port for injecting the first gas into the processing space 100.

[0037] The second gas flow path 4b is used to inject the second gas. The second gas and the first gas can be different gases. For example, when the first gas is a source gas, the second gas can be a reaction gas. One side of the second gas flow path 4b can be connected to the gas storage unit 40 by a pipeline or a hose, etc. The other side of the second gas flow path 4b can be connected to the processing space 100. Therefore, the second gas supplied from the gas storage unit 40 can flow along the second gas flow path 4b, and then can be injected into the processing space 100 through the second gas flow path 4b. The second gas flow path 4b can be used as a flow path that enables the second gas to flow, and can be used as an injection port for injecting the second gas into the processing space 100.

[0038] The second gas flow path 4b and the first gas flow path 4a may be provided to be spatially separated from each other. Therefore, the second gas supplied from the gas storage unit 40 to the second gas flow path 4b may be ejected into the processing space 100 without passing through the first gas flow path 4a. The first gas supplied from the gas storage unit 40 to the first gas flow path 4a may be ejected into the processing space 100 without passing through the second gas flow path 4b. The second gas flow path 4b and the first gas flow path 4a may eject gas toward different portions of the processing space 100.

[0039] For example, the spray unit 4 may include a first plate 41 and a second plate 42 .

[0040] The first plate 41 is disposed above the second plate 42. The first plate 41 and the second plate 42 may be disposed to be spaced apart from each other. A plurality of first gas holes 411 may be formed in the first plate 41. Each of the first gas holes 411 may be used as a path for enabling the first gas to flow. The first gas hole 411 may be included in the first gas flow path 4a. A plurality of second gas holes 412 may be formed in the second plate 42. Each of the second gas holes 412 may be used as a path for enabling the second gas to flow. The second gas hole 412 may be included in the second gas flow path 4b. A plurality of protrusion members 413 may be coupled to the first plate 41. The protrusion member 413 may protrude from the lower surface of the first plate 41 toward the second plate 42. Each of the first gas holes 411 may be formed to pass through the first plate 41 and the protrusion member 413.

[0041] A plurality of openings 421 may be formed in the second plate 42. The openings 421 may be formed to penetrate the second plate 42. The openings 421 may be respectively disposed at positions corresponding to the protruding members 413. Figure 2 As shown, the protrusion members 413 may be formed to have a length that enables the protrusion members 413 to be respectively inserted into the openings 421. Although not shown, the protrusion members 413 may be formed to have a length that enables the protrusion members 413 to be respectively disposed above the openings 421. The protrusion members 413 may be formed to have a length that protrudes downward from the second plate 42. The second gas holes 412 may be provided to spray gas toward the upper surface of the second plate 42.

[0042] The ejection unit 4 may generate plasma by using the second plate 42 and the first plate 41. In this case, plasma power such as radio frequency (RF) power may be applied to the first plate 41, and the second plate 42 may be grounded. The first plate 41 may be grounded, and plasma power may be applied to the second plate 42.

[0043] The method of manufacturing a thin film according to the present invention may be performed by using the substrate processing apparatus 1 .

[0044] refer to Figures 1 to 4 ,like Figure 3 As shown, the method for manufacturing a thin film according to the present invention can manufacture a thin film implemented as an insulating layer 210 in a thin film transistor (TFT) 200. The insulating layer 210 may be provided between a gate electrode 220 and a semiconductor layer 230. The gate electrode 220 may be formed on a substrate S. The semiconductor layer 230 may be formed on the insulating layer 210. A source electrode 240 and a drain electrode 250 may be formed on the semiconductor layer 230. When the thin film transistor 200 is manufactured to be more miniaturized and have a thinner thickness, the insulating layer 210 may become thinner, and because the thickness of the insulating layer 210 becomes thinner, current leakage may occur due to a tunneling phenomenon.

[0045] In order to reduce current leakage, the method for manufacturing a thin film according to the present invention is implemented to manufacture a thin film containing a high-k dielectric material. In addition, the method for manufacturing a thin film according to the present invention is implemented to manufacture a thin film by crystallizing a high-k dielectric material. Therefore, the method for manufacturing a thin film according to the present invention can manufacture a thin film for further reducing current leakage, thereby facilitating the manufacture of a thinner thin film transistor 200 with a thinner thickness.

[0046] To this end, the method for manufacturing a thin film according to the present invention may include a first forming step S10 , a second forming step S20 , and a crystallization step S30 .

[0047] refer to Figures 1 to 5 , the first forming step S10 sprays a first source gas containing a high-k dielectric material to form a first thin film layer 310 on the substrate S. In the first forming step S10, the first source gas may be sprayed through a first gas flow path 4a included in the spray unit 4. The first source gas may contain at least one of hafnium (Hf) and zirconium (Zr). All of hafnium and zirconium correspond to high-k dielectric materials. In the case where the first source gas contains all of hafnium and zirconium, the source gas containing hafnium and the source gas containing zirconium may be mixed with each other in a buffer tank (buffer tank) provided to be spaced apart from the spray unit 4 to generate a mixed gas, and then the mixed gas may be supplied to the spray unit 4 and may be sprayed into the processing space 100. Therefore, the method for manufacturing a thin film according to the present invention can manufacture a thin film with improved step coverage, and further, a thin film with improved uniformity of components can be manufactured.

[0048] The first forming step S10 may spray the first source gas so that the high-k dielectric material contained in the first source gas is adsorbed onto the substrate S, and then the first reaction gas may be sprayed to form the first thin film layer 310 on the substrate S. In this case, the first forming step S10 may form the first thin film layer 310 on the substrate S by using an atomic layer deposition (ALD) process. The first reaction gas may react with the first source gas, and the first reaction gas may be sprayed through the second gas flow path 4b included in the spray unit 4. For example, the first reaction gas may be ozone (O3).

[0049] refer to Figures 1 to 5 , the second forming step S20 sprays a second source gas containing a high-k dielectric material to form a second thin film layer 320 on the substrate S. In the second forming step S20, the second source gas may be sprayed through the first gas flow path 4a included in the spray unit 4. The second source gas may contain at least one of hafnium and zirconium. The second forming step S20 may spray the second source gas so that the high-k dielectric material contained in the second source gas is adsorbed onto the substrate S, and then, the second reaction gas may be sprayed to form the second thin film layer 320 on the substrate S. In this case, the second forming step S20 may form the second thin film layer 320 on the substrate S by using an atomic layer deposition (ALD) process. The second reaction gas may react with the second source gas, and the second reaction gas may be sprayed through the second gas flow path 4b included in the spray unit 4. For example, the second reaction gas may be ozone (O3). In addition, in Figure 5 In FIG. 3 , the second thin film layer 320 is shown to be directly formed on the first thin film layer 310, but is not limited thereto, and another thin film layer may be disposed between the second thin film layer 320 and the first thin film layer 310. Figure 5 In FIG. 1 , the first thin film layer 310 is shown to be formed on the lower film 330 formed on the substrate S, but is not limited thereto, and the first thin film layer 310 may be formed directly on the substrate S.

[0050] refer to Figures 1 to 5 The crystallization step S30 crystallizes at least one of the first thin film layer 310 and the second thin film layer 320 by using plasma. Since the thin film is manufactured by crystallizing the high-k dielectric material by using plasma through the crystallization step S30, the method of manufacturing a thin film according to the present invention can achieve the following effects.

[0051] First, based on the method for manufacturing a thin film according to the present invention, compared with a thin film in which all the first thin film layers 310 and the second thin film layers 320 contain high-k dielectric materials and at least one of the first thin film layers 310 and the second thin film layers 320 is crystallized, a comparative example of a thin film in which all the first thin film layers 310 and the second thin film layers 320 are manufactured to contain high-k dielectric materials and all the first thin film layers 310 and the second thin film layers 320 are not crystallized exhibits a larger leakage current value at the same thickness. Therefore, the method for manufacturing a thin film according to the present invention can be implemented to manufacture a thin film in which all the first thin film layers 310 and the second thin film layers 320 contain high-k dielectric materials and at least one of the first thin film layers 310 and the second thin film layers 320 is crystallized, thereby manufacturing a thin film for further reducing leakage current despite being formed to have a thinner thickness than the thin film according to the comparative example. Therefore, the method for manufacturing a thin film according to the present invention can manufacture a thin film transistor 200, etc. that is finer and has a thinner thickness and can further reduce current leakage, thereby contributing to further improving the performance of the thin film transistor 200, etc.

[0052] Secondly, in the comparative example of crystallizing the high-k dielectric material by the thermal process, the high-k dielectric material does not crystallize when it is not formed to have a certain thickness or more. For example, the high-k dielectric material containing at least one of hafnium and zirconium is not crystallized until it is formed to have a certain thickness or more. On the other hand, the method for manufacturing a thin film according to the present invention is implemented to crystallize the high-k dielectric material by using plasma, so although the high-k dielectric material is formed to have a thinner thickness than the comparative example in which the high-k dielectric material is crystallized by a thermal process, the high-k dielectric material can still be crystallized. For example, based on plasma, the high-k dielectric material containing at least one of hafnium and zirconium is crystallized only when it is formed to have a thickness of Therefore, the method for manufacturing a thin film according to the present invention is implemented to crystallize a high-k dielectric material by using plasma, and thus, although formed to have a thinner thickness, a thin film for further reducing current leakage can be manufactured.

[0053] The crystallization step S30 may generate plasma by using a plasma gas containing at least one of helium (He), argon (Ar), ammonia (NH3), oxygen (O2), and hydrogen (H2). In this case, the first source gas may contain at least one of hafnium and zirconium, and the first reaction gas may be ozone (O3). The first source gas may contain at least one of hafnium, zirconium, and aluminum (Al).

[0054] refer to Figures 1 to 6 , the method for manufacturing a thin film according to the present invention may include removing step S40.

[0055] The removal step S40 removes the oxide film from the lower film 330 formed on the substrate S. The removal step S40 may be performed before performing the first formation step S10. Therefore, the first formation step S10 may be performed by forming a first thin film layer 310 on the lower film 330 from which the oxide film is removed by the removal step S40. Therefore, the method for manufacturing a thin film according to the present invention may form a first thin film layer 310 having a further improved film quality. The oxide film formed on the lower film 330 may be generated due to exposure to the atmospheric environment. For example, an oxide film may be formed on the lower film 330 during the transfer of the substrate S between the processing chambers. In the process of removing the oxide film, undesirable contaminants may be removed together by the removal step S40. The removal step S40 may be performed by using an oxide elimination chamber (OEC).

[0056] refer to Figures 1 to 7 In the method for manufacturing a thin film according to the present invention, the first forming step S10 may include a first adsorption step S11 and a first deposition step S12.

[0057] The first adsorption step S11 sprays a first source gas to adsorb the high-k dielectric material onto the substrate S. The first adsorption step S11 may be performed by spraying the first source gas onto the substrate S through the first gas flow path 4a included in the spray unit 4. The source gas may contain at least one of hafnium (Hf) and zirconium (Zr). The first adsorption step S11 may spray a first source gas containing hafnium or zirconium. The first adsorption step S11 may spray a first source gas containing all of hafnium and zirconium. In this case, in the first adsorption step S11, the source gas containing hafnium and the source gas containing zirconium may be mixed with each other in a buffer tank to generate a mixed gas, and then, the mixed gas may be sprayed. The first adsorption step S11 may first spray a source gas containing one of hafnium and zirconium, and then may spray a source gas containing the other of hafnium and zirconium. The first source gas may contain at least one of hafnium, zirconium, and aluminum (Al). For example, the first source gas may be one of HfO2, ZrO2, Al2O3, and HfZrO.

[0058] The first deposition step S12 sprays the first reaction gas to deposit a thin film including a high-k dielectric material on the substrate S. The first deposition step S12 may be performed by spraying the first reaction gas onto the substrate S via the second gas flow path 4b included in the spray unit 4. The first thin film layer 310 may be formed on the substrate S by an atomic layer deposition (ALD) process via the first adsorption step S11 and the first deposition step S12. The first deposition step S12 may be performed by spraying ozone as the first reaction gas onto the substrate S.

[0059] The first forming step S10 may include a first adsorption blowing step S13 and a first deposition blowing step S14 .

[0060] After performing the first adsorption step S11, the first adsorption blowing step S13 may be performed by spraying the blowing gas onto the substrate S. The first adsorption blowing step S13 may be performed by spraying the blowing gas onto the substrate S via at least one of the first gas flow path 4a and the second gas flow path 4b of the injection unit 4. The first adsorption blowing step S13 may be performed by spraying the blowing gas onto the substrate S via the blowing gas flow path (not shown) of the injection unit 4. The blowing gas flow path, the first gas flow path 4a, and the second gas flow path 4b may be implemented to be spaced apart from each other in space. After performing the first adsorption blowing step S13, the first deposition step S12 may be performed.

[0061] After performing the first deposition step S12, the first deposition blowing step S14 may be performed by spraying the blowing gas onto the substrate S. The first deposition blowing step S14 may be performed by spraying the blowing gas onto the substrate S via at least one of the first gas flow path 4a and the second gas flow path 4b of the spray unit 4. The first deposition blowing step S14 may be performed by spraying the blowing gas onto the substrate S via a blowing gas flow path (not shown). After performing the first deposition blowing step S14, the crystallization step S30 may be performed.

[0062] Here, the first forming step S10 and the crystallization step S30 may be performed in a processing space 100 having an ultra-vacuum state. For example, the first forming step S10 and the crystallization step S30 may be performed in a state where the processing space 100 has an ultra-vacuum of several mtorr to tens of mtorr. Undesirable impurities of the first source gas may be discharged more smoothly in an ultra-vacuum state, and therefore, the method for manufacturing a thin film according to the present invention may arrange the first source material contained in the first source gas into a uniform lattice structure. Therefore, the method for manufacturing a thin film according to the present invention may be implemented to facilitate the growth of the first source material arranged into a uniform lattice structure into a crystalline arrangement having a high k dielectric constant.

[0063] In the case where the first forming step S10 includes the first depositing step S12 and the first adsorption step S11 , the crystallizing step S30 may include the first crystallizing step S31 .

[0064] The first crystallization step S31 crystallizes the first thin film layer 310. The first crystallization step S31 may be performed after the first deposition step S12 is performed. In this case, the method for manufacturing a thin film according to the present invention may deposit the first thin film layer 310 on the substrate S through the first adsorption step S11 and the first deposition step S12, and then, the high-k dielectric material of the first thin film layer 310 may be crystallized by using plasma via the first crystallization step S31. After the first crystallization step S31 is performed, each step may be performed again from the first adsorption step S11. In addition, in the case where the first crystallization step S31 is performed after the first deposition step S12 is performed, the method for manufacturing a thin film according to the present invention may perform each step and a thermal process together. The thermal process may be performed continuously or intermittently while performing the first adsorption step S11, the first deposition step S12, and the first crystallization step S31. In the case where the first forming step S10 includes the first deposition blowing step S14, the first crystallization step S31 may be performed after the first deposition blowing step S14 is performed.

[0065] refer to Figures 1 to 8 , in the method for manufacturing a thin film according to the present invention, the first deposition step S12 and the first crystallization step S31 may be performed together. In this case, the first reaction gas ejected onto the substrate S by the first deposition step S12 may be activated by using the plasma generated by the first crystallization step S31, and may reach the substrate S. Therefore, since the first deposition step S12 and the crystallization step S30 are performed together, the method for manufacturing a thin film according to the present invention may deposit the first thin film layer 310 containing a high-k dielectric material onto the substrate S, and may crystallize the first thin film layer 310 by using plasma. After performing the first deposition step S12 and the first crystallization step S31 together, the steps may be performed again from the first adsorption step S11. Although not shown, the first deposition step S12 may use plasma of oxygen (O2) as the first reaction gas, and thus deposition and crystallization may be performed together.

[0066] refer to Figures 1 to 8 In the method for manufacturing a thin film according to the present invention, the first crystallization step S31 may include a first parallel crystallization step S311 and a first subsequent crystallization step S312.

[0067] The first parallel crystallization step S311 crystallizes the high-k dielectric material by using plasma. The first parallel crystallization step S311 and the first deposition step S12 may be performed together. In this case, the first reaction gas ejected onto the substrate S by the first deposition step S12 may be activated by using the plasma generated by the first parallel crystallization step S311, and may reach the substrate S. Therefore, since the first deposition step S12 and the first parallel crystallization step S311 are performed together, the method for manufacturing a thin film according to the present invention may deposit the first thin film layer 310 on the substrate S, and may crystallize the first thin film layer 310 by using plasma.

[0068] The first subsequent crystallization step S312 crystallizes the first thin film layer 310 by using plasma. After performing the first deposition step S12 and the first parallel crystallization step S311, the first subsequent crystallization step S312 may be performed. Therefore, the method for manufacturing a thin film according to the present invention may be implemented to preliminarily crystallize the first thin film layer 310 by the first parallel crystallization step S311, and then to secondary crystallize the first thin film layer 310 by the first subsequent crystallization step S312. Therefore, the method for manufacturing a thin film according to the present invention may increase the crystallization rate of the first thin film layer 310, and thus, although formed to have a thinner thickness, a thin film for further reducing current leakage may be manufactured. Therefore, the method for manufacturing a thin film according to the present invention may contribute to manufacturing a thin film transistor 200 that is finer and has a thinner thickness. After performing the first subsequent crystallization step S312, each step may be performed again from the first adsorption step S11.

[0069] refer to Figures 1 to 9 , in the method for manufacturing a thin film according to the present invention, the second forming step S20 may include a second adsorption step S21 and a second deposition step S22.

[0070] The second adsorption step S21 sprays a second source gas to adsorb the high-k dielectric material onto the substrate S. The second adsorption step S21 may be performed by spraying the second source gas onto the substrate S via the first gas flow path 4a included in the spray unit 4. The second adsorption step S21 may spray a second source gas containing hafnium or zirconium. The second adsorption step S21 may spray a second source gas containing all of hafnium and zirconium. In this case, in the second adsorption step S21, the source gas containing hafnium and the source gas containing zirconium may be mixed with each other in a buffer tank to generate a mixed gas, and then, the mixed gas may be sprayed. The second adsorption step S21 may first spray a source gas containing one of hafnium and zirconium, and then, a source gas containing the other of hafnium and zirconium may be sprayed. The first source gas may contain at least one of hafnium, zirconium, and aluminum (Al). The second source gas may contain at least one of hafnium, zirconium, and aluminum (Al). For example, the second source gas may be one of HfO2, ZrO2, Al2O3, and HfZrO.

[0071] The second deposition step S22 sprays the second reaction gas to deposit a thin film including a high-k dielectric material on the substrate S. The second deposition step S22 may be performed by spraying the second reaction gas onto the substrate S via the second gas flow path 4b included in the spray unit 4. The second thin film layer 320 may be formed on the substrate S by an atomic layer deposition (ALD) process via the second adsorption step S21 and the second deposition step S22. The second deposition step S22 may be performed by spraying ozone as the second reaction gas onto the substrate S.

[0072] The second forming step S20 may include a second adsorption blowing step S23 and a second deposition blowing step S24.

[0073] After performing the second adsorption step S21, the second adsorption blowing step S23 may be performed by spraying the blowing gas onto the substrate S. The second adsorption blowing step S23 may be performed by spraying the blowing gas onto the substrate S via at least one of the first gas flow path 4a and the second gas flow path 4b of the injection unit 4. The second adsorption blowing step S23 may be performed by spraying the blowing gas onto the substrate S via the blowing gas flow path (not shown) of the injection unit 4. The blowing gas flow path, the first gas flow path 4a, and the second gas flow path 4b may be implemented to be spaced apart from each other in space. After performing the second adsorption blowing step S23, the second deposition step S22 may be performed.

[0074] After performing the second deposition step S22, the second deposition blowing step S24 may be performed by spraying the blowing gas onto the substrate S. The second deposition blowing step S24 may be performed by spraying the blowing gas onto the substrate S via at least one of the first gas flow path 4a and the second gas flow path 4b of the spray unit 4. The second deposition blowing step S24 may be performed by spraying the blowing gas onto the substrate S via a blowing gas flow path (not shown). After performing the second deposition blowing step S24, the crystallization step S30 may be performed.

[0075] Here, the second forming step S20 and the crystallization step S30 may be performed in the processing space 100 having an ultra-vacuum state. For example, the second forming step S20 and the crystallization step S30 may be performed in a state where the processing space 100 has an ultra-vacuum of several millitorr to several tens of millitorr. Undesirable impurities of the second source gas may be discharged more smoothly in the ultra-vacuum state, and therefore, the method for manufacturing a thin film according to the present invention may arrange the second source material contained in the second source gas into a uniform lattice structure. Therefore, the method for manufacturing a thin film according to the present invention may be implemented to facilitate the growth of the second source material arranged into a uniform lattice structure into a crystalline arrangement having a high-k dielectric constant.

[0076] In the case where the second forming step S20 includes the second depositing step S22 and the second adsorption step S21 , the crystallizing step S30 may include a second crystallizing step S32 .

[0077] The second crystallization step S32 crystallizes the second thin film layer 320. The second crystallization step S32 may be performed after the second deposition step S22 is performed. In this case, the method for manufacturing a thin film according to the present invention may deposit the second thin film layer 320 on the substrate S through the second adsorption step S21 and the second deposition step S22, and then, the high-k dielectric material of the second thin film layer 320 may be crystallized by using plasma via the second crystallization step S32. After the second crystallization step S32 is performed, each step may be performed again from the second adsorption step S21. In addition, in the case where the second crystallization step S32 is performed after the second deposition step S22 is performed, the method for manufacturing a thin film according to the present invention may perform each step and a thermal process together. The thermal process may be performed continuously or intermittently while the second adsorption step S21, the second deposition step S22, and the second crystallization step S32 are performed. In the case where the second forming step S20 includes a second deposition blowing step S24, the second crystallization step S32 may be performed after the second deposition blowing step S24 is performed.

[0078] refer to Figures 1 to 10, in the method for manufacturing a thin film according to the present invention, the second deposition step S22 and the second crystallization step S32 may be performed together. In this case, the second reaction gas ejected onto the substrate S by the second deposition step S22 may be activated by using the plasma generated by the second crystallization step S32, and may reach the substrate S. Therefore, since the second deposition step S22 and the crystallization step S30 are performed together, the method for manufacturing a thin film according to the present invention may deposit a second thin film layer 320 containing a high-k dielectric material on the substrate S, and may crystallize the second thin film layer 320 by using plasma. After performing the second deposition step S22 and the second crystallization step S32 together, the steps may be performed again from the second adsorption step S21. Although not shown, the second deposition step S22 may use plasma of oxygen (O2) as the second reaction gas, so deposition and crystallization may be performed together.

[0079] refer to Figures 1 to 10 , in the method for manufacturing a thin film according to the present invention, the second crystallization step S32 may include a second parallel crystallization step S321 and a second subsequent crystallization step S322.

[0080] The second parallel crystallization step S321 crystallizes the high-k dielectric material by using plasma. The second parallel crystallization step S321 and the second deposition step S22 may be performed together. In this case, the second reaction gas ejected onto the substrate S by the second deposition step S22 may be activated by using the plasma generated by the second parallel crystallization step S321, and may reach the substrate S. Therefore, since the second deposition step S22 and the second parallel crystallization step S321 are performed together, the method for manufacturing a thin film according to the present invention may deposit the second thin film layer 320 on the substrate S, and may crystallize the second thin film layer 320 by using plasma.

[0081] The second subsequent crystallization step S322 crystallizes the second thin film layer 320 by using plasma. After performing the second deposition step S22 and the second parallel crystallization step S321, the second subsequent crystallization step S322 may be performed. Therefore, the method for manufacturing a thin film according to the present invention may be implemented to preliminarily crystallize the second thin film layer 320 by the second parallel crystallization step S321, and then to secondary crystallize the second thin film layer 320 by the second subsequent crystallization step S322. Therefore, the method for manufacturing a thin film according to the present invention may increase the crystallization rate of the second thin film layer 320, and thus, although formed to have a thinner thickness, a thin film for further reducing current leakage may be manufactured. Therefore, the method for manufacturing a thin film according to the present invention may contribute to manufacturing a thin film transistor 200 that is finer and has a thinner thickness. After performing the second subsequent crystallization step S322, each step may be performed again from the second adsorption step S21.

[0082] Here, when the first thin film layer 310 is crystallized, a first grain boundary 311 ( Figure 5 ). The first grain boundary 311 may be formed to pass through the first thin film layer 310 in the direction in which the first thin film layer 310 is deposited. The first grain boundary 311 may be formed in a plurality in the first thin film layer 310. When the second thin film layer 320 is crystallized, a second grain boundary 321 ( Figure 5 ). The second grain boundary 321 may be formed to penetrate the second thin film layer 320 in a direction in which the second thin film layer 320 is deposited.

[0083] In this case, when the first thin film layer 310 and the second thin film layer 320 are deposited by using the same high-k dielectric material and crystallized under the same process conditions, the first grain boundary 311 and the second grain boundary 321 may be connected to each other. Therefore, current leakage may be generated through the first grain boundary 311 and the second grain boundary 321.

[0084] In order to prevent current leakage, the first source gas and the second source gas may contain different high-k dielectric materials. Therefore, in the method of manufacturing a thin film according to the present invention, even when the first thin film layer 310 and the second thin film layer 320 are crystallized under the same process conditions, the first grain boundary 311 and the second grain boundary 321 may not be connected to each other. That is, Figure 5 As shown, the first grain boundary 311 and the second grain boundary 321 may be formed at staggered positions. Therefore, the method for manufacturing a thin film according to the present invention can reduce the current leakage generated through the first grain boundary 311 and the second grain boundary 321. In this case, the first forming step S10 and the second forming step S20 may deposit the first thin film layer 310 and the second thin film layer 320 by using different first source gases and second source gases. Subsequently, in the crystallization step S30, even when the first thin film layer 310 and the second thin film layer 320 are crystallized under the same process conditions, the first grain boundary 311 and the second grain boundary 321 may still be formed at staggered positions.

[0085] In addition, the crystallization step S30 may crystallize the first thin film layer 310 and the second thin film layer 320 under different conditions. In this case, even when the first source gas and the second source gas contain the same high-k dielectric material, the method for manufacturing a thin film according to the present invention may form the first grain boundary 311 and the second grain boundary 321 at staggered positions based on the difference between the process conditions for crystallization. Therefore, the method for manufacturing a thin film according to the present invention may reduce current leakage generated through the first grain boundary 311 and the second grain boundary 321. The crystallization step S30 may crystallize the first thin film layer 310 and the second thin film layer 320 at different crystallization rates, and thus the first grain boundary 311 and the second grain boundary 321 may be formed at staggered positions.

[0086] In addition, the method for manufacturing a thin film according to the present invention may be implemented such that the first source gas and the second source gas contain different high-k dielectric materials, and the first thin film layer 310 and the second thin film layer 320 are crystallized under different process conditions. Therefore, the distance between the first grain boundary 311 and the second grain boundary 321 can be increased, and thus, the method for manufacturing a thin film according to the present invention can further reduce the current leakage generated through the first grain boundary 311 and the second grain boundary 321. For example, the first crystallization step S31 and the second crystallization step S32 can generate plasma by using different plasma gases, and thus crystallization can be performed under different process conditions.

[0087] refer to Figures 1 to 12 , the method for manufacturing a thin film according to the present invention may be implemented to crystallize only one of the first thin film layer 310 and the second thin film layer 320. For example, the crystallization step S30 may be implemented to crystallize only the first thin film layer 310 and not the second thin film layer 320. In this case, Fig.11 As shown, the first grain boundary 311 is formed only in the first thin film layer 310, and the second grain boundary 321 is not formed in the second thin film layer 320. For example, the crystallization step S30 may be implemented to crystallize only the second thin film layer 320 and not the first thin film layer 310. In this case, Fig.12 As shown, the second grain boundary 321 is formed only in the second thin film layer 320, and the first grain boundary 311 is not formed in the first thin film layer 310. As described above, the method for manufacturing a thin film according to the present invention can be implemented to crystallize only one of the first thin film layer 310 and the second thin film layer 320, thereby preventing current from leaking through the grain boundary.

[0088] refer to Figures 1 to 14 , the method for manufacturing a thin film according to the present invention may include a third forming step S50.

[0089] The third forming step S50 forms the third thin film layer 340 on the substrate S. The third forming step S50 may form the third thin film layer 340 in an amorphous form. Therefore, no grain boundary may be formed in the third thin film layer 340. Therefore, even when the first source gas is the same as the second source gas and the first thin film layer 310 and the second thin film layer 320 crystallized under the same process conditions are formed, the third thin film layer 340 may prevent current leakage from being generated through the first grain boundary 311 and the second grain boundary 321. The third forming step S50 may form the third thin film layer 340 at a lower crystallization rate than each of the first thin film layer 310 and the second thin film layer 320. Therefore, no grain boundary may be formed in the third thin film layer 340, or fewer grain boundaries may be formed in the third thin film layer 340 than in the first thin film layer 310 and the second thin film layer 320. Therefore, even when the first source gas is the same as the second source gas and the first and second thin film layers 310 and 320 crystallized under the same process conditions are formed, the third thin film layer 340 may prevent current leakage through the first and second grain boundaries 311 and 321 .

[0090] like Fig.14 As shown, the third thin film layer 340 may be disposed between the first thin film layer 310 and the second thin film layer 320. In this case, the third forming step S50 may be performed after the first forming step S10 is performed. The second forming step S20 may be performed after the third forming step S50 is performed. Although not shown, the third thin film layer 340 may be disposed between the first thin film layer 310 and the lower film 330. In this case, the first forming step S10 may be performed after the third forming step S50 is performed. The third thin film layer 340 may be disposed on the second thin film layer 320. In this case, the third forming step S50 may be performed after the second forming step S20 is performed. Although not shown, the method for manufacturing a thin film according to the present invention may perform the third forming step S50 multiple times, and thus a plurality of third thin film layers 340 may be formed. In this case, these third thin film layers 340 may be disposed to be spaced apart from each other. Therefore, the third thin film layer 340 may prevent current leakage generated through grain boundaries at different locations.

[0091] The third forming step S50 may spray a third source gas so that the third source material of the third source gas is adsorbed onto the substrate S, and then a third reaction gas may be sprayed to form a third thin film layer 340 on the substrate S. In this case, the third forming step S may form the third thin film layer 340 on the substrate S by using an atomic layer deposition (ALD) process. The third source gas may include a high-k dielectric material, but is not limited thereto, and may include a material capable of preventing current leakage through a grain boundary to replace the high-k dielectric material. The third source gas may be sprayed through a first gas flow path 4a included in the spray unit 4. The third reaction gas may react with the third source gas, and the third reaction gas may be sprayed through a second gas flow path 4b included in the spray unit 4. The third forming step S50 may be performed by spraying the third source gas and the third reaction gas. In this case, the third forming step S50 may form the third thin film layer 340 by using a chemical vapor deposition (CVD) process.

[0092] Hereinafter, embodiments of the thin film according to the present invention will be described in detail.

[0093] refer to Figures 1 to 14 The thin film according to the present invention can be manufactured by the method for manufacturing a thin film according to the present invention described above. The thin film according to the present invention can be implemented as an insulating layer 210 disposed between a gate 220 and a semiconductor layer 230 in a thin film transistor 200 .

[0094] The film according to the present invention may include a first film layer 310 and a second film layer 320 .

[0095] The first thin film layer 310 may be formed on the substrate S by using a mixed material including a high-k dielectric material. The first thin film layer 310 may be crystallized by plasma. Therefore, although the first thin film layer 310 is formed to have a thin thickness, the thin film according to the present invention may be implemented to have a dielectric constant capable of reducing current leakage, thereby facilitating the manufacture of a thinner thin film transistor 200 having a finer thickness. The first thin film layer 310 may also be formed on the lower film 330. Although not shown, the thin film according to the present invention may include a plurality of first thin film layers 310. These first thin film layers 310 may be arranged to be spaced apart from each other.

[0096] The first thin film layer 310 may be formed of a mixed material including at least one of hafnium and zirconium. The first thin film layer 310 may be formed of a mixed material including at least one of hafnium, zirconium, and aluminum. The first thin film layer 310 may be deposited on the substrate S through the first forming step S10, and may be crystallized through the crystallization step S30.

[0097] The first thin film layer 310 may be formed to have The first thin film layer 310 may be crystallized over the entire surface of the deposition surface, and thus may be formed to have a dielectric constant of 30K or more. The first thin film layer 310 has a thickness of 200 Å or less and a dielectric constant of 30 K or more. Therefore, although formed to have a thin thickness, the first thin film layer 310 may be implemented to reduce current leakage.

[0098] In addition, the dielectric constant of the first thin-film layer 310 may be determined based on Equation 1 below.

[0099] [Formula 1]

[0100]

[0101] In formula 1, C OX may be an oxide capacitance of the thin film layer, D may be a thickness of the thin film layer, and A may be an area of ​​the thin film layer. The dielectric constant of the first thin film layer 310 calculated by Formula 1 may be implemented as 30K or more.

[0102] The first thin film layer 310 may be formed to have The equivalent oxide thickness (EOT) is as follows. EOT indicates the extent to which the high-k dielectric material exhibits a thickness effect compared to silicon dioxide (SiO2). That is, EOT indicates the thickness of the high-k dielectric material when having the same capacitance as that of silicon dioxide (SiO2). When the first thin film layer 310 is formed to have Below the EOT, the first thin film layer 310 may be implemented to have a thin thickness and reduce current leakage.

[0103] refer to Figures 1 to 14 , a second thin film layer 320 may be formed on the substrate S by using a mixed material including a high-k dielectric material. The second thin film layer 320 may be formed on the first thin film layer 310. Although not shown, the first thin film layer 310 may be formed on the second thin film layer 320. The second thin film layer 320 may be formed of a mixed material including at least one of hafnium and zirconium. The second thin film layer 320 may be formed of a mixed material including at least one of hafnium, zirconium, and aluminum. The second thin film layer 320 may be deposited on the substrate S by a second forming step S20. Although not shown, the thin film according to the present invention may include a plurality of second thin film layers 320. These second thin film layers 320 may be arranged to be spaced apart from each other.

[0104] The second thin film layer 320 may be formed of an amorphous material. Fig.11As shown, the first grain boundary 311 is formed only in the first thin film layer 310, and the second grain boundary 321 is not formed in the second thin film layer 320. Therefore, the method of manufacturing a thin film according to the present disclosure can be implemented to crystallize only the first thin film layer 310, thereby preventing current leakage through the grain boundary.

[0105] The second thin film layer 320 may be crystallized by plasma. Therefore, the thin film according to the present invention may be formed to have a thin thickness and may be implemented to have a dielectric constant capable of reducing current leakage, thereby facilitating the manufacture of a finer and thinner thin film transistor 200. The second thin film layer 320 may be crystallized by a crystallization step S30.

[0106] The second film layer 320 may be crystallized at a different crystallization rate from that of the first film layer 310. Therefore, the second grain boundary 321 formed in the second film layer 320 and the first grain boundary 311 formed in the first film layer 310 may be formed at staggered positions and may not be connected to each other. Therefore, the film according to the present invention may reduce the current leakage generated by the first grain boundary 311 and the second grain boundary 321. In this case, the second film layer 320 and the first film layer 310 may be formed of different high-k dielectric materials. Therefore, even when the second film layer 320 and the first film layer 310 are crystallized under the same process conditions, the second grain boundary 321 and the first grain boundary 311 may still be formed at staggered positions. The second film layer 320 and the first film layer 310 may be crystallized under different process conditions. Therefore, even when the second film layer 320 and the first film layer 310 are formed of the same high-k dielectric material, the second grain boundary 321 and the first grain boundary 311 may still be formed at staggered positions. The second thin film layer 320 and the first thin film layer 310 may be formed of different high-k dielectric materials and may be crystallized under different process conditions.

[0107] The second thin film layer 320 may be formed to have Above and Here, the second thin film layer 320 is formed to have a dielectric constant less than 20K and less than 30K. When the thickness is greater than , the current leakage may increase, and the second thin film layer 320 is formed to have a thickness greater than When the second thin film layer 320 is crystallized to have a dielectric constant of less than 20K, it is difficult to reduce current leakage, and when the second thin film layer 320 is crystallized to have a dielectric constant of more than 30K, the second thin film layer 320 has conductivity and is difficult to serve as an insulating layer. For the above reasons, the thin film according to the present invention can be formed to have Above and The thickness of the second thin-film layer 320 may be less than 100 K and may be implemented to have a dielectric constant of 20 K or more and 30 K or less. In addition, the dielectric constant of the second thin-film layer 320 may be determined based on Formula 1.

[0108] The second thin film layer 320 may be partially crystallized and thus may be formed to have Above and The thickness may be less than 20 K and may be formed to have a dielectric constant of 20 K or more and 30 K or less. In this case, compared with the second thin film layer 320 being entirely crystallized, the thin film according to the present invention may be implemented to have a dielectric constant and thickness sufficient to be used as the insulating layer 210 and to reduce process time, thereby improving productivity.

[0109] The second thin film layer 320 may be formed to have Above and The EOT of the second film layer 320 is less than When the current leakage increases, and the EOT of the second film layer 320 is greater than Based on the above reasons, the second film layer 320 can be formed to have Above and The following EOT, therefore, can be implemented to reduce current leakage despite being formed to have a thin thickness.

[0110] refer to Figures 1 to 14 , the film according to the present invention may include a third film layer 340 .

[0111] The third thin film layer 340 may be formed on the substrate S by using a mixed material including a high-k dielectric material. The third thin film layer 340 may be formed on the substrate S by a third forming step S50. The third thin film layer 340 may be formed of a mixed material including at least one of hafnium and zirconium. The third thin film layer 340 may be formed of a mixed material including at least one of hafnium, zirconium, and aluminum. Fig.14 As shown, the third thin film layer 340 may be disposed between the first thin film layer 310 and the second thin film layer 320. Although not shown, the third thin film layer 340 may be disposed between the first thin film layer 310 and the lower film 330. The third thin film layer 340 may be formed on the second thin film layer 320. Although not shown, the thin film according to the present invention may include a plurality of third thin film layers 340. These third thin film layers 340 may be disposed to be spaced apart from each other.

[0112] The third thin film layer 340 may be formed of an amorphous material. Therefore, no grain boundary is formed in the third thin film layer 340. Therefore, even when the first thin film layer 310 and the second thin film layer 320 are formed by using the same source gas and crystallized under the same process conditions, the third thin film layer 340 can prevent current leakage generated through the first grain boundary 311 and the second grain boundary 321.

[0113] The third thin film layer 340 may be crystallized at a crystallization rate lower than that of each of the first thin film layer 310 and the second thin film layer 320. Therefore, a grain boundary may not be formed in the third thin film layer 340, or fewer grain boundaries may be formed than the first thin film layer 310 and the second thin film layer 320. Therefore, even when the first thin film layer 310 and the second thin film layer 320 are formed by using the same source gas and crystallized under the same process conditions, the third thin film layer 340 may prevent current leakage from being generated through the first grain boundary 311 and the second grain boundary 321.

[0114] Hereinafter, embodiments of a substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

[0115] refer to Figures 1 to 15 The substrate processing apparatus 1 according to the present invention may be implemented to deposit a thin film and crystallize the thin film by using a plasma chemical vapor deposition (PCVD) process. The method of manufacturing a thin film according to the present invention described above may be performed by the substrate processing apparatus 1. The thin film according to the present invention described above may be manufactured by using the substrate processing apparatus 1.

[0116] The substrate processing apparatus 1 according to the present invention may include a chamber 2 , a susceptor 3 , an upper dome 5 , and an antenna 6 .

[0117] The chamber 2 may include a side wall. The chamber 2 may be formed by a conductor. The inner space of the chamber 2 may have a cylindrical shape. The outer shape of the chamber 2 may be a rectangular parallelepiped shape. The chamber 2 may be cooled by cooling water. The chamber 2, the upper dome 5 and the lower dome 7 may be combined to provide a sealed space. A substrate inlet (not shown) may be provided in the side surface of the chamber 2. The chamber 2 may include an exhaust port (not shown) formed in the side surface facing the substrate inlet. The exhaust port may be connected to a high vacuum pump (not shown). The high vacuum pump may be a turbomolecular pump. The high vacuum pump may maintain a low base pressure and may maintain a pressure of several millitorr or less even in the execution of the process. The upper surface of the exhaust port may be lower than or the same as the upper surface of the substrate inlet.

[0118] The susceptor 3 supports the substrate S. The susceptor 3 may support one substrate S, or may support a plurality of substrates S. In the case where the susceptor 3 supports a plurality of substrates S, a process of sequentially performing treatment processes on the plurality of substrates S to manufacture a thin film on each of the substrates S may be performed. The susceptor 3 may be disposed in the chamber 2.

[0119] The upper dome 5 covers the upper surface of the chamber 2. The upper dome 5 may be formed of a transparent dielectric material. For example, the upper dome 5 may be formed of quartz or sapphire. The upper dome 5 may be inserted into or coupled to a jaw formed on the upper surface of the chamber 2. The coupling portion of the upper dome 5 coupled to the chamber 2 may be formed in a gasket shape for vacuum sealing. The upper dome 5 may also be formed in an arc shape or an elliptical shape. The upper dome 5 may allow infrared light incident from the lower portion to pass through the upper dome 5. The upper dome 5 may be formed of a ceramic that is better than quartz in terms of corrosion resistance and corrosion resistance.

[0120] Antenna 6 is arranged above upper dome 5. Antenna 6 can form inductively coupled plasma. Antenna 6 may include two single-turn unit antennas. In this case, the two single-turn unit antennas may be arranged to overlap each other on the upper surface and the lower surface. The two single-turn unit antennas may be connected to RF power supply 140 in parallel. The width direction of the two single-turn unit antennas may be arranged to stand vertically. In the method for manufacturing a thin film according to the above-mentioned present invention, plasma may be generated by antenna 6. In addition, in the method for manufacturing a thin film according to the above-mentioned present invention, source gas and reaction gas may be injected by an injector (not shown), which is arranged to extend toward the processing space in upper dome 5 and lower dome 7. The injector may be used as the above-mentioned injection unit. The substrate processing device 1 according to the present invention may include a plurality of injectors.

[0121] The lower dome 7 may be coupled to the chamber 2 to cover the lower surface of the chamber 2. The lower dome 7 may be formed of a transparent dielectric material. For example, the lower dome 7 may be formed of quartz or sapphire. The lower dome 7 may include a lower dome body having a funnel shape, a gasket-shaped coupling portion coupled to a jaw formed in the lower surface of the chamber 2, and a cylindrical cylindrical pipe connected to the center of the lower dome body. The lower dome 7 may be inserted into and coupled to the jaw formed in the lower surface of the chamber 2. The coupling portion 158a of the lower dome 7 coupled to the chamber 2 may be formed in a gasket shape for vacuum sealing. A drive shaft for moving the base 3 may be inserted into and disposed in the cylindrical pipe. A purge gas may be supplied through the lower dome 7. In this case, the purge gas may be supplied through the cylindrical pipe.

[0122] The substrate processing device 1 according to the present invention may include an electric wave shielding housing 8. The electric wave shielding housing 8 may be provided to surround the antenna 6. The electric wave shielding housing 8 may be heated by a heater. Infrared light reflected by the electric wave shielding housing 8 may pass through the upper dome 5 and may be incident on the substrate S.

[0123] The present invention described above is not limited to the above embodiments and drawings, and those skilled in the art will clearly understand that various modifications, variations, and substitutions are possible without departing from the scope and spirit of the present invention.

Claims

1. A method for manufacturing a thin film, comprising: A first forming step of spraying a first source gas containing a high-k dielectric material to form a first thin film layer on a substrate; a second forming step of spraying a second source gas containing a high-k dielectric material to form a second thin film layer on the substrate; as well as A crystallization step of crystallizing at least one of the first thin film layer and the second thin film layer by using plasma.

2. The method for manufacturing a thin film according to claim 1, further comprising: before performing the first forming step, a removing step of removing an oxide film from a lower film formed on the substrate, Here, the first forming step forms the first thin film layer on the lower film from which the oxide film is removed.

3. The method for producing a thin film according to claim 1, wherein: The first source gas and the second source gas contain different high-k dielectric materials.

4. The method for producing a thin film according to claim 1, wherein: The first forming step forms the first thin film layer by using a first source gas containing at least one high-k dielectric material of hafnium (Hf) and zirconium (Zr), and The second forming step forms the second thin film layer by using a second source gas containing at least one high-k dielectric material of hafnium (Hf) and zirconium (Zr).

5. The method for producing a thin film according to claim 1, wherein: The first forming step comprises: A first adsorption step of spraying the first source gas to adsorb the high-k dielectric material onto the substrate; and A first deposition step of injecting a first reaction gas that reacts with the first source gas to deposit the first thin film layer including a high-k dielectric material on the substrate.

6. The method for producing a thin film according to claim 5, wherein: The crystallization step includes a first crystallization step of crystallizing the first thin film layer, and The first crystallization step is performed after performing the first deposition step or is performed together with the first deposition step.

7. The method for manufacturing a thin film according to claim 5, wherein: The first deposition step performs deposition and crystallization together by using plasma of oxygen (O 2 ) as the first reaction gas.

8. The method for manufacturing a thin film according to claim 5, wherein: The first deposition step sprays ozone (O3) as the first reaction gas.

9. The method for manufacturing a thin film according to claim 5, wherein: The crystallization step includes a first crystallization step of crystallizing the first thin film layer, and The first crystallization step comprises: a first parallel crystallization step, the first parallel crystallization step being performed together with the first deposition step; and A first subsequent crystallization step is performed after the first deposition step and the first parallel crystallization step are performed.

10. The method for manufacturing a thin film according to claim 1, wherein: The crystallization step generates plasma by using a plasma gas including at least one of helium (He), argon (Ar), ammonia (NH 3 ), oxygen (O 2 ), and hydrogen (H 2 ).

11. The method for manufacturing a thin film according to claim 1, wherein: The crystallization step causes the first film layer and the second film layer to crystallize at different crystallization rates.

12. The method for manufacturing a thin film according to claim 1, wherein: The crystallization step crystallizes only the first thin film layer.

13. The method for manufacturing a thin film according to claim 1, further comprising: a third forming step of forming a third thin film layer on the substrate, The third forming step forms an amorphous third thin film layer, or forms a third thin film layer having a crystallization rate lower than that of each of the first thin film layer and the second thin film layer.

14. A film comprising: a first thin film layer formed on a substrate by using a high-k dielectric material and crystallized by plasma; as well as A second thin film layer is formed on the substrate by using a high-k dielectric material.

15. The film of claim 14, wherein The second film layer crystallizes at a crystallization rate different from that of the first film layer, or is formed of an amorphous material.

16. The film of claim 14, wherein The first thin film layer and the second thin film layer are formed by using different high-k dielectric materials.

17. The film of claim 14, wherein The first thin film layer is formed by using at least one high-k dielectric material of hafnium (Hf) and zirconium (Zr), and The second thin film layer is formed by using at least one high-k dielectric material of hafnium (Hf) and zirconium (Zr).

18. The thin film of claim 14, further comprising a third thin film layer formed on the substrate, and The third thin film layer is formed of an amorphous material, or crystallizes at a lower crystallization rate than each of the first thin film layer and the second thin film layer.

19. A substrate processing device, comprising: Chamber; a substrate supporting unit, the substrate supporting unit supporting a substrate in the chamber; an upper dome disposed on an upper surface of the chamber; as well as an antenna disposed above the upper dome to generate an inductively coupled plasma, Wherein, the upper dome is formed of ceramic.

Images