Semiconductor module having at least first semiconductor component, second semiconductor component and heat sink

Abstract

The invention relates to a semiconductor module (2) having at least a first semiconductor component (4), a second semiconductor component (6) and a common heat sink (14), the heat sink (14) being configured such that a cooling fluid is guided in a cooling fluid flow direction (18), the semiconductor components (4, 6) being arranged on a surface (12) of the heat sink (14), the semiconductor components (4, 6) each having a substrate (22, 24), at least one semiconductor element (28) is connected to each of the substrates (22, 24), in particular in a material-to-material manner, and wherein each of the substrates (22, 24) comprises a dielectric material layer (30, 32). In order to achieve improved reliability, it is proposed that the second dielectric material layer (32) of the second semiconductor component (6) differs from the first dielectric material layer (30) of the first semiconductor component (4) at least in terms of thermal conductivity.

Description

Technical Field

[0001] The invention relates to a semiconductor module having at least a first semiconductor component, a second semiconductor component and a common heat sink.

[0002] The invention also relates to a power converter having at least such a power semiconductor module.

[0003] Furthermore, the invention relates to a method for producing such a semiconductor module.

[0004] Furthermore, the invention relates to a computer program product comprising instructions which, when the program is executed by a computer, cause the computer to simulate the behavior of such a semiconductor module. Background Art

[0005] In such power converters, semiconductor modules, which are enclosed in particular by a housing, are screwed to a heat sink, for example, via a solid metal base plate. A power converter can be understood, for example, as a rectifier, an inverter, a converter or a DC voltage converter. The semiconductor elements used in the semiconductor module include, but are not limited to, transistors, diodes, bidirectional thyristors or thyristors. The transistors are designed, for example, as insulated gate bipolar transistors (IGBTs), field effect transistors or bipolar transistors. The semiconductor elements are usually contacted on a substrate.

[0006] Publication WO 2022 / 002464 A1 describes a power module having at least two power units, each of which includes at least one power semiconductor and a substrate. In order to reduce the structural space required for the power module and improve heat dissipation, it is proposed that at least one corresponding power semiconductor is connected to the corresponding substrate in a material-fitting manner, wherein the substrates of at least two power half units are directly connected to the surface of a common heat sink in a material-fitting manner.

[0007] Publication US 10,014,238 B2 describes an electronic assembly including a thermal management system, which can include a heat sink on which electronic components are mounted. The electronic components can be mounted on the heat sink in a staggered arrangement along a centerline substantially perpendicular to the flow direction of the coolant. Summary of the invention

[0008] In view of the above, an object of the present invention is to provide a semiconductor module with improved reliability.

[0009] According to the present invention, the object is achieved by a semiconductor module, which has at least a first semiconductor component, a second semiconductor component and a common heat sink, wherein the heat sink is configured so as to guide the cooling fluid in the direction of flow of the cooling fluid, wherein the semiconductor components are arranged on the surface of the heat sink, wherein the semiconductor components respectively have a substrate, on which at least one semiconductor element is respectively connected, in particular in a material-fitting manner, wherein the substrates respectively include a dielectric material layer, wherein the second dielectric material layer of the second semiconductor component is different from the first dielectric material layer of the first semiconductor component at least in terms of thermal conductivity, wherein the second semiconductor component is arranged closest to the downstream end of the heat sink, wherein the second dielectric material layer has a higher thermal conductivity than the first dielectric material layer.

[0010] Furthermore, according to the invention, the object is achieved by a power converter having at least such a semiconductor module.

[0011] Furthermore, according to the present invention, the object is achieved by a method for manufacturing such a semiconductor module, wherein at least semiconductor elements, in particular, are connected to a substrate in a material-fitting manner to manufacture a semiconductor component, wherein in a further step, the semiconductor component, in particular, is connected to a surface of a heat sink in a material-fitting manner.

[0012] Furthermore, according to the invention, the object is achieved by a computer program product comprising instructions which, when the program is executed by a computer, cause the computer to simulate the behavior, in particular the thermal, mechanical and / or electrical behavior, of such a semiconductor module.

[0013] The advantages and preferred embodiments listed below with regard to the semiconductor module can be transferred to the power converter, the method and the computer program product.

[0014] The present invention is based on the following considerations: the reliability of the semiconductor module is improved by uniformly dissipating the heat of the semiconductor components arranged on the surface of a common heat sink. The heat dissipation is carried out via a cooling fluid guided along the flow direction of the cooling fluid. The cooling fluid includes but is not limited to being gaseous, such as air. Additionally or alternatively, a liquid cooling fluid or phase change cooling can also be used. The semiconductor components each have a substrate on which at least one semiconductor element is connected. The semiconductor element is connected to the corresponding substrate, for example, in a material-matched manner, in particular by welding, sintering or adhesion. The substrates of the semiconductor components each include a dielectric material layer for establishing an electrically insulating and heat-conducting connection between the corresponding semiconductor element and the common heat sink. This dielectric material layer includes but is not limited to being able to contain ceramic materials. In order to achieve uniform heat dissipation, the second dielectric material layer of the second semiconductor component is different from the first dielectric material layer of the first semiconductor component at least in terms of its thermal conductivity. For example, a second dielectric material layer is used for a second semiconductor component that has a higher heat loss than the first semiconductor component, and the second dielectric material layer has a higher thermal conductivity than the first dielectric material layer. As a result, even dissipation of waste heat is achieved even with varying levels, which has a positive impact on the reliability of the semiconductor modules and extends their service life.

[0015] A computer program product including instructions can include a "digital twin", also referred to as a "digital twin", or designed as a digital twin, wherein, when the program is executed by a computer, the instructions cause the computer to simulate the behavior, in particular the thermal behavior, mechanical behavior and / or electrical behavior, of a semiconductor module. For example, such a digital twin is shown in the publication US 2017 / 0286572 A1. The disclosure of US 2017 / 0286572 A1 is incorporated into this application by reference. For example, a "digital twin" is a digital representation of components related to the operation of a corresponding semiconductor module.

[0016] The second semiconductor component is arranged closest to the downstream end of the radiator, wherein the second dielectric material layer has a higher thermal conductivity than the first dielectric material layer. For example, a cooling air flow is supplied to the common radiator on one side, for example via a fan, wherein the cooling air flow is guided from the upstream end of the common radiator to the downstream end. In particular, the second semiconductor component is arranged between the first semiconductor component and the downstream end of the common radiator. Due to the heat loss of the first semiconductor component, the cooling fluid dissipates heat when it reaches the second semiconductor component. More uniform heat dissipation is achieved through the higher thermal conductivity of the second dielectric material layer, thereby achieving thermal optimization.

[0017] Another embodiment proposes that the semiconductor module has at least a third semiconductor component, the third semiconductor component is arranged between the first semiconductor component and the second semiconductor component, the third semiconductor component has a third substrate, at least one semiconductor element is connected to the third substrate, in particular, it is connected in a material-to-material manner, wherein the third substrate includes a third dielectric material layer, wherein the third dielectric material layer is different from the first dielectric material layer and / or the second dielectric material layer at least in terms of thermal conductivity. The at least three semiconductor components include but are not limited to being able to respectively include a half bridge for realizing a three-phase power converter, especially in the case of more than three semiconductor components of a multi-level power converter. Additionally or alternatively, the semiconductor components can be connected in parallel, which enables simple scaling or modularization of the semiconductor module.

[0018] Another embodiment provides that the second dielectric material layer has a higher thermal conductivity than the first dielectric material layer and / or the third dielectric material layer. Since the second dielectric material layer arranged closest to the downstream end of the heat sink has a higher thermal conductivity, more uniform heat dissipation is achieved, thereby achieving thermal optimization.

[0019] Another embodiment provides that the semiconductor components are arranged on the surface of the heat sink in a staggered pattern along the axis, wherein the cooling fluid flow direction extends substantially along the axis. The axis includes but is not limited to being able to be a flow axis, wherein the cooling fluid flow direction extends substantially parallel to the flow axis. For example, the semiconductor components are distributed alternately, in particular alternately at variable spacings, in a staggered manner along the flow axis. Alternating staggering means here that the semiconductor components are shifted alternately to the left and to the right relative to the axis. In this way, a more uniform heat dissipation of the semiconductor components is achieved.

[0020] Another embodiment provides that the substrate surface of the semiconductor component arranged closest to the downstream end of the heat sink is at least 20% larger, in particular at least 50% larger, than the substrate surface of the other semiconductor components arranged on this surface of the heat sink. In this way, improved heat dissipation can be achieved, thereby additionally achieving more uniform heat dissipation, which has a positive effect on the reliability of the semiconductor module and prolongs its service life.

[0021] Another embodiment proposes that the semiconductor component arranged closest to the downstream end of the heat sink is configured as at least part of an inverter. In particular, the semiconductor component arranged at the downstream end of the heat sink has a dielectric material layer with relatively high thermal conductivity. Such an inverter comprises switchable semiconductor elements, in particular transistors, such as IGBTs, while a rectifier that can form a converter with the inverter can be manufactured with the aid of non-switchable semiconductor elements, such as diodes. Therefore, in such an inverter, large temperature fluctuations are caused during operation when the current is flowing, wherein the higher thermal conductivity of the dielectric material layer significantly reduces the temperature fluctuations, which has a positive effect on the service life of the semiconductor module.

[0022] Another embodiment proposes that the substrates of the semiconductor components are respectively connected to the surface of the common heat sink in a direct material-fit manner via a connection layer. The direct material-fit connection can be immediately described as a direct connection, which includes a connecting agent for establishing a material-fit connection, such as an adhesive, a solder alloy, a sintering paste, etc., but excludes additional connecting elements, such as additional conductors, bonding wires, spacers, base plates, thermally conductive pastes, etc. By eliminating such additional connecting elements, an improved thermal connection of the semiconductor components is achieved, so that improved heat dissipation is achieved. In addition, the direct material-fit connection saves structural space.

[0023] Another embodiment provides that at least the first dielectric material layer of the first substrate comprises aluminum oxide, and at least the second dielectric material layer of the second substrate comprises aluminum nitride. Although aluminum oxide is more cost-effective, aluminum nitride contributes less to temperature fluctuations, resulting in reduced overall temperature fluctuations. For example, aluminum oxide contributes 40K to temperature fluctuations, while aluminum nitride contributes only 36K. By using more expensive aluminum nitride in the semiconductor assembly arranged at the downstream end of the heat sink, more uniform heat dissipation is achieved, thereby increasing the service life of the semiconductor module.

[0024] Another embodiment proposes that the first connection layer for connecting the first substrate is thinner than the second connection layer for connecting the second substrate. For example, the thickness of the second connection layer is 1.2 times that of the first connection layer. In particular, the expansion coefficient of aluminum nitride is more different from the thermal expansion coefficient of aluminum nitride than the expansion coefficient of the metal surface of the heat sink, wherein the metal surface contains, for example, copper or aluminum. Thicker connection layers absorb more stress due to the different expansion coefficients, and therefore the stress buffering effect between the corresponding dielectric material layer and the metal heat sink is stronger. Therefore, the heat sink can be prevented from bending due to the different expansion coefficients by the thicker second connection layer.

[0025] A further embodiment provides that the first connection layer for connecting the first substrate is made of a first alloy and the second connection layer for connecting the second substrate is made of a second alloy, wherein the first alloy differs from the second alloy in terms of its composition. For example, the second connection layer for connecting the second substrate is exposed to higher thermal loads, so that a cheaper and less powerful alloy is sufficient for the first connection layer for connecting the first substrate.

[0026] Another embodiment provides that the second alloy has a higher antimony mass fraction than the first alloy. For example, a cheap SAG (tin / silver / copper) solder is used for the first alloy, while a more robust tin-antimony alloy is used for the second alloy which can in turn be connected to a second substrate, which is exposed to higher heat. Thus, an improved cost situation is achieved with a high reliability of the semiconductor module.

[0027] Further embodiments provide that the substrates of the semiconductor components each have a thickness d of 25 μm to 400 μm, in particular 50 μm to 250 μm. This thickness is a compromise with regard to thermal optimization and the bending of the heat sink. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The invention is described and explained in more detail below with reference to the exemplary embodiments shown in the drawings.

[0029] The accompanying drawings show:

[0030] Figure 1 A schematic perspective view showing a first specific embodiment of a semiconductor module,

[0031] Figure 2 A schematic cross-sectional view showing a second specific embodiment of a semiconductor module,

[0032] Figure 3 A schematic cross-sectional view shows a third specific embodiment of a semiconductor module,

[0033] Figure 4 a schematic diagram showing a fourth embodiment of a semiconductor module in a top view,

[0034] Figure 5 A schematic diagram of a power converter with semiconductor modules is shown. DETAILED DESCRIPTION

[0035] The embodiments explained below are preferred embodiments of the present invention. In the embodiments, the described components of the embodiments are respectively individual features of the present invention that can be considered independently of one another, and the features also improve the present invention independently of one another and are therefore also considered as components of the present invention individually or in a combination different from that shown. In addition, the described embodiments can also be supplemented by other features of the already described features of the present invention.

[0036] The same reference symbols have the same meaning in different figures.

[0037] Figure 1 A schematic perspective view of a first embodiment of a semiconductor module 2 is shown, which comprises a first semiconductor component 4, a second semiconductor component 6, and a third semiconductor component 8, wherein the semiconductor components 4, 6, 8 are mounted in a staggered pattern along an axis 10 on a surface 12 of a common heat sink 14. The common heat sink 14 is formed by cooling ribs 16 designed as cooling fins, so that a gaseous cooling fluid flows along the cooling fins in a coolant flow direction 18, wherein the cooling fluid flow direction 18 extends essentially parallel to the axis 10. The semiconductor module 2 is thus cooled on one side.

[0038] The second semiconductor component 6 is arranged closest to the downstream end 20 of the common heat sink 14. In addition, the semiconductor components 4, 6, 8 include substrates 22, 24, 26, respectively, on which semiconductor elements 28 are connected, especially in a material-matched manner. For example, the semiconductor element 28 is designed as a transistor T and an anti-parallel diode D. In particular, the transistor T is designed as a vertical power transistor, such as an insulated gate bipolar transistor (IGBT). The material-matched connection of the semiconductor element 28 to the corresponding substrate 22, 24, 26 includes but is not limited to being able to be established by welding, sintering or adhesion.

[0039] The substrates 22, 24, 26 each include a dielectric material layer 30, 32, 34, in particular a dielectric material layer metallized on both sides, via which the respective semiconductor element 28 is connected in an electrically insulating and thermally conductive manner to the common heat sink 14. For example, the second dielectric material layer 32 of the second semiconductor component 6 differs from the first dielectric material layer 30 of the first semiconductor component 4 at least in terms of its thermal conductivity. In addition, the third dielectric material layer 34 of the third semiconductor component 8 can differ from the first dielectric material layer 30 and / or the second dielectric material layer 6 in terms of its thermal conductivity.

[0040] For example, the cooling fluid flowing in the coolant flow direction 18 can be heated due to the heat loss formed in the semiconductor elements 28 of the first semiconductor component 4 and the third semiconductor component 8, so that the higher thermal conductivity of the second dielectric material layer 32 leads to a more uniform cooling of the semiconductor components 4, 6, 8. For example, the first dielectric material layer 30 of the first substrate 22 and the third dielectric material layer 34 of the third substrate 26 are made of aluminum oxide, while the second dielectric material layer 32 of the second substrate 24 at the downstream end 20 closest to the common heat sink 14 is made of aluminum nitride, wherein aluminum nitride has a higher thermal conductivity than aluminum oxide. In this way, temperature fluctuations during operation of the semiconductor module 2, for example temperature fluctuations in the region of the second semiconductor component 4, are reduced, which has a positive effect on the service life of the semiconductor module 2.

[0041] Figure 2A schematic cross-sectional view of a second embodiment of a semiconductor module 2 is shown, which embodiment comprises, for example, two semiconductor components 4, 6, wherein the second semiconductor component 6 is arranged closest to the downstream end 20 of the heat sink 14. The substrates 22, 24 each have a thickness d of 25 μm to 400 μm, in particular 50 μm to 250 μm. In addition, the substrates each consist of a dielectric material layer 30, 32 metallized on both sides and containing a ceramic material. The first dielectric material layer 30 of the first substrate 22 is made of aluminum oxide, while the second dielectric material layer 32 of the second substrate 24, which is arranged closest to the downstream end 20 of the common heat sink 14, is made of aluminum nitride, wherein aluminum nitride has a higher thermal conductivity than aluminum oxide. The semiconductor element 28 is connected to the respective substrate 22, 24 in a material-fitting manner via a first metallization 36. In addition, the substrates 22 and 24 of the semiconductor components 4 and 6 respectively have a second metallization 38 on the side facing away from the semiconductor element 28, and the second metallization is directly connected to the surface 12 of the common heat sink 14 via the connection layers 40 and 42 in a material-fitting manner. Therefore, the semiconductor element 28 is electrically insulated and thermally conductively connected to the common heat sink 14 via the corresponding dielectric material layers 30 and 32. The direct material-fit connection via the corresponding connection layers 40 and 42 includes but is not limited to being able to be established by welding or sintering, but without using additional connection elements, such as metal blocks, sheets or thermal conductive paste. The first connection layer 40 for connecting the first substrate 22 is made of a first alloy, and the second connection layer 42 for connecting the second substrate 24 is made of a second first alloy, wherein the first first alloy and the second alloy are different in terms of their material composition. In particular, the second alloy contains a higher mass fraction of antimony than the first alloy. For example, the first alloy is an offset SAC (tin / silver / copper) solder, and the second alloy is a tin-antimony alloy. The second dielectric material layer 32 of the second substrate 24 made of aluminum nitride ensures a stronger bending of the heat sink 14 than the first dielectric material layer 30 of the first substrate 22 made of aluminum oxide due to its different thermal expansion coefficient relative to the metal heat sink 14, which is at least partially compensated by the better performing second alloy.

[0042] The heat sink 14 is made of a first metal material 44, for example, aluminum or an aluminum alloy. A cavity 46 is introduced on its surface 12, and the cavity is filled with a second metal material 48, which has a higher thermal conductivity than the first metal material. For example, the second metal material 48 contains copper. The cavity 46 filled with the second metal material 48 is respectively assigned to the semiconductor components 4, 6, wherein the second metal material 48 is substantially flush with the surface 12 of the heat sink 14. The connecting layers 40, 42 are respectively connected to the second metal material 48 of the cavity 46 over the entire surface. In particular, the second metal material 48 is introduced into the cavity 46 by means of an additive method, for example by means of cold gas spraying. Dedicated sensors, in particular temperature sensors, are respectively assigned to the semiconductor components 4, 6 in order to monitor the temperature of the semiconductor element 28.

[0043] The power board 50, which is arranged to extend substantially parallel to the surface 12 of the heat sink 14, is connected to the semiconductor components 4 and 6 via freely positionable contacts 52, wherein the freely positionable contacts 52 are connected to the first metallization 36 of the respective substrates 22 and 24 of the semiconductor components 4 and 6 in a material-fitting manner. In this context, the power board 50 should be understood as a circuit board, which is designed, for example, as a printed circuit board (PCB) in particular with a multilayer structure. The circuit board contains, for example, an interface to the power unit, a driver circuit, a control circuit and / or a capacitor. In this context, the freely positionable contacts 52 include, but are not limited to, pins that can be freely arranged on the substrates 22 and 24 due to their structural characteristics. Such structural characteristics are, for example, feet and / or bevels that allow the pins to be freely and stably arranged on the substrate, for example, by a material-fitting connection with the substrate, without the need for a housing or other stabilizing means, and the bevel simplifies the finding of drilling holes in the power board 50 and ensures higher stability and robustness, for example, in the case of thermal expansion during operation. The freely positionable contact 52 has a resiliently yielding section and is connected to the power strip 50 , for example, by means of a press-fit connection. Figure 2 A further embodiment of the semiconductor module 2 in Figure 1 Implementation plan in .

[0044] Figure 3A schematic cross-sectional view of a third embodiment of a semiconductor module 2 is shown. The first dielectric material layer 30 of the first substrate 22 is made of aluminum oxide, while the second dielectric material layer 32 of the second substrate 24, which is closest to the downstream end 20 of the common heat sink 14, is made of aluminum nitride. The first connection layer 40 for connecting the first substrate 22 has a first thickness d1, while the second connection layer 42 for connecting the second substrate 24 has a second thickness d2, wherein the second thickness d2 of the second connection layer 42 is greater than the first thickness d1 of the first connection layer 40. In particular, the second thickness d2 is 1.2 times the first thickness d1 or the second thickness is 20% greater than the first thickness. The second dielectric material layer 32 made of aluminum nitride ensures a greater bending of the heat sink 14 than the first dielectric material layer 30 made of aluminum oxide due to its different expansion coefficient relative to the metal heat sink 14, which is at least partially compensated by the thicker second connection layer 42. Therefore, the thicker second connection layer acts more strongly as a stress buffer between the respective dielectric material layers 30, 32 and the metal heat sink 14. Figure 3 Other embodiments of the semiconductor module 2 correspond to Figure 2 Implementation plan in .

[0045] Figure 4 A schematic diagram of a fourth design of a semiconductor module 2 is shown in a top view, the semiconductor module having three semiconductor components 4, 6, 8, wherein the semiconductor components 4, 6, 8 are arranged on the surface 12 of the heat sink 14 in a staggered pattern along the axis 10. The second semiconductor component 6 is arranged closest to the downstream end 20 of the heat sink 14. The third semiconductor component 8 is arranged between the first semiconductor component 4 and the second semiconductor component 6 relative to the axis 10. The first semiconductor component 4 is configured as a (especially three-phase) rectifier 54, and the second semiconductor component 6 is configured as a (especially three-phase) inverter 56. The third semiconductor component 8 is configured as a monitoring device 58, for example, an intermediate circuit voltage, in particular as a brake chopper. The inverter 56 includes switchable semiconductor elements, such as transistors, in particular IGBTs, while diodes are used in the rectifier. The substrate area of ​​the inverter 56 is at least 1.5 times, in particular 2 times, the substrate area of ​​the rectifier 54 or the monitoring device 58. The dielectric material layer 32 of the inverter 56 is made of aluminum nitride, while the dielectric material layers 30 , 34 of the rectifier 54 and the monitoring device 58 are made of less expensive aluminum oxide. Figure 4 A further embodiment of the semiconductor module 2 in Figure 3 Implementation plan in .

[0046] Figure 5 A schematic diagram of a power converter 60 with a semiconductor module 2 is shown. The power converter 60 can include more than one semiconductor module 2 .

[0047] In summary, the present invention relates to a semiconductor module 2 having at least a first semiconductor component 4, a second semiconductor component 6 and a common heat sink 14, wherein the heat sink 14 is configured to guide a cooling fluid along a cooling fluid flow direction 18, wherein the semiconductor components 4, 6 are arranged on a surface 12 of the heat sink 14, wherein the semiconductor components 4, 6 have substrates 22, 24, respectively, to which at least one semiconductor element 28 is connected, in particular, in a material-to-material manner, wherein the substrates 22, 24 respectively include dielectric material layers 30, 32. In order to achieve improved reliability, it is proposed that the second dielectric material layer 32 of the second semiconductor component 6 is different from the first dielectric material layer 30 of the first semiconductor component 4 at least in terms of thermal conductivity.

Claims

1. A semiconductor module (2) comprising at least a first semiconductor component (4), a second semiconductor component (6) and a common heat sink (14), in, The heat sink (14) is configured to guide the cooling fluid along a cooling fluid flow direction (18), The semiconductor components (4, 6) are arranged on a surface (12) of the heat sink (14). The semiconductor components (4, 6) respectively have substrates (22, 24), to which at least one semiconductor element (28) is respectively connected, in particular in a material-to-material manner. Wherein, the substrates (22, 24) respectively include dielectric material layers (30, 32), It is characterized in that The second dielectric material layer (32) of the second semiconductor component (6) differs from the first dielectric material layer (30) of the first semiconductor component (4) at least in terms of thermal conductivity of the second dielectric material layer. The second semiconductor component (6) is arranged closest to the downstream end (20) of the heat sink (14), The second dielectric material layer (32) has a higher thermal conductivity than the first dielectric material layer (30).

2. The semiconductor module (2) according to claim 1, The invention relates to a semiconductor device having at least a third semiconductor component (8), wherein the third semiconductor component is arranged between the first semiconductor component (4) and the second semiconductor component (6), wherein the third semiconductor component has a third substrate (26), and at least one semiconductor element (28) is connected to the third substrate, in particular in a material-to-material manner. in, The third substrate (26) comprises a third dielectric material layer (34), The third dielectric material layer (34) is different from the first dielectric material layer (30) and / or the second dielectric material layer (32) at least in terms of thermal conductivity of the third dielectric material layer.

3. The semiconductor module (2) according to claim 2, in, The second dielectric material layer (32) has a higher thermal conductivity than the first dielectric material layer (30) and / or the third dielectric material layer (34).

4. The semiconductor module (2) according to claim 1, in, The semiconductor components (4, 6, 8) are arranged on a surface (12) of the heat sink (14) in a staggered pattern along an axis (10), Wherein, the cooling fluid flow direction (18) extends substantially along the axis (10).

5. The semiconductor module (2) according to claim 1, in, The substrate area of ​​the semiconductor component (4, 6, 8) arranged closest to the downstream end (20) of the heat sink (14) is at least 20% larger, in particular at least 50% larger, than the substrate area of ​​the other semiconductor components (4, 6, 8) arranged on the surface (12) of the heat sink (14).

6. The semiconductor module (2) according to any one of the preceding claims, in, The semiconductor component (4, 6, 8) arranged closest to the downstream end (20) of the heat sink (14) is configured as at least a part of an inverter.

7. The semiconductor module (2) according to any one of the preceding claims, in, The substrates (22, 24, 26) of the semiconductor components (4, 6, 8) are respectively connected to the surface (12) of the common heat sink (14) in a direct material-matching manner via connection layers (40, 42).

8. The semiconductor module (2) according to claim 7, in, At least the first dielectric material layer (30) of the first substrate (22) contains aluminum oxide, and at least the second dielectric material layer (32) of the second substrate (24) contains aluminum nitride.

9. The semiconductor module (2) according to claim 8, in, A first connection layer (40) used for connecting the first substrate (22) is thinner than a second connection layer (42) used for connecting the second substrate (24).

10. The semiconductor module (2) according to claim 8 or 9, in, A first connection layer (40) for connecting the first substrate (22) is made of a first alloy, and a second connection layer (42) for connecting the second substrate (24) is made of a second alloy, The first alloy is different from the second alloy in terms of the first alloy composition.

11. The semiconductor module (2) according to claim 10, in, The second alloy has a higher mass fraction of antimony than the first alloy.

12. The semiconductor module (2) according to claim 1, in, The substrates (22, 24, 26) of the semiconductor components (4, 6, 8) each have a thickness d of 25 μm to 400 μm, in particular 50 μm to 250 μm.

13. The semiconductor module (2) according to claim 1, in, The semiconductor element (28) of the semiconductor assembly (4, 6) is designed as a diode (D) and a transistor (T) connected in anti-parallel.

14. A power converter (60) having at least one semiconductor module (2) according to any one of the preceding claims.

15. A method for producing a semiconductor module (2) according to any one of claims 1 to 13, in, At least one semiconductor element (28) is respectively connected to a substrate (22, 24, 26), in particular in a material-to-material manner, to produce the semiconductor assembly (4, 6, 8), In another step, the semiconductor components (4, 6, 8) are connected to the surface (12) of the heat sink (14), in particular in a material-to-material manner. 16 . A computer program product comprising instructions which, when the program is executed by a computer, cause the computer to simulate the behavior, in particular the thermal, mechanical and / or electrical behavior, of a semiconductor module ( 2 ) according to claim 1 .

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