Cobalt oxide target material and preparation method and application thereof

Abstract

The invention provides a cobalt oxide target material and a preparation method and application thereof, and belongs to the technical field of target materials. The preparation method of the cobalt oxide target material comprises the following steps that a mold filled with cobalt oxide powder is sequentially subjected to vacuumizing, heat treatment and hot pressing treatment, and a cobalt oxide target blank is obtained; wherein the temperature of heat treatment ranges from 950 DEG C to 1050 DEG C, and the time ranges from 2 h to 4 h; the temperature of the hot pressing treatment is 950-1050 DEG C, the pressure is 30-50 MPa, and the time is 0.5-2 hours; and machining the cobalt oxide target blank to obtain the cobalt oxide target material. According to the method, the cobalt oxide target material which is single in phase, high in relative density, low in resistivity and stable in property is obtained through heat treatment and hot pressing treatment by adopting specific treatment parameters, and the requirement of magnetron sputtering on the target material can be met.

Description

Technical Field

[0001] The present disclosure relates to the technical field of target materials, and in particular to a cobalt oxide target material and a preparation method and application thereof. Background Art

[0002] Cobalt oxide has two oxide phases: CoO and Co3O4, of which CoO has two different stable structural space groups, rock salt (Fm3m) and wurtzite (P63mc), and rock salt CoO is more stable than wurtzite CoO. Both rock salt CoO and Co3O4 are called direct transition p-type semiconductors, which are paramagnetic around room temperature.

[0003] The band gaps of rock salt and wurtzite CoO are about 2.6eV and 1.6eV, respectively, and Co3O4 (normal spinel structure) has a band gap of 1.4-1.8eV. Materials with large band gaps have a narrower absorption range of light, but can withstand higher voltages and temperatures. On the contrary, materials with small band gaps have a wider absorption range of light, but are prone to leakage and breakdown. Therefore, in terms of application, rock salt (Fm3m) CoO materials will be used as priority materials. Studies have reported that CoO undergoes an insulator-to-metal transition (MIT) under high pressure, accompanied by magnetic collapse. Under high pressure, the antiferromagnetic phase of rock salt CoO collapses and the band gap closes because the external pressure causes the three-dimensional electron delocalization of Co. The MIT of CoO has been understood to be a Mott insulator like other transition metal oxides such as NiO, MnO, and FeO. The Co / CoO bilayer has a specific exchange bias magnetism. The CoO layer with antiferromagnetic properties plays a key role in the exchange bias of the magnetosphere / CoO system and can be used for memory device applications.

[0004] Sputtering is usually used to deposit CoO thin films on memory devices. Therefore, CoO thin films are required to be the only phase. However, CoO powder is easily oxidized into Co3O4 powder in the air, resulting in impure phases of the CoO thin film, which in turn leads to a decrease in the performance of the CoO thin film. Therefore, it is crucial to provide a cobalt oxide raw material that can be used in memory devices and has stable properties. Summary of the invention

[0005] The purpose of the present invention is to overcome the deficiencies of the prior art and provide a cobalt oxide target material and a preparation method and application thereof.

[0006] To achieve the above objectives, the technical solution adopted by the present disclosure is as follows: In a first aspect, a method for preparing a cobalt oxide target is provided, comprising the following steps:

[0007] The mold filled with cobalt oxide powder is sequentially subjected to vacuuming, heat treatment and hot pressing treatment to obtain a cobalt oxide target blank; wherein the heat treatment temperature is 950-1050°C and the time is 2-4h; the hot pressing temperature is 950-1050°C, the pressure is 30-50MPa, and the time is 0.5-2h;

[0008] The cobalt oxide target blank is machined to obtain a cobalt oxide target material.

[0009] In some embodiments, the heat treatment step comprises: heating to 950-1050° C. at a rate of 5-10° C. / min and keeping the temperature for 2-4 hours.

[0010] In some embodiments, the hot pressing step includes: increasing the pressure to 30-50 MPa at a rate of 0.1-0.6 MPa / min, maintaining the temperature at 950-1050° C. for 0.5-2 h.

[0011] In some embodiments, the vacuuming is performed to a vacuum degree of less than or equal to 10 -1 Pa.

[0012] In some embodiments, the average particle size of the cobalt oxide powder is less than or equal to 10 μm.

[0013] In some embodiments, the purity of the cobalt oxide is greater than or equal to 99.99%.

[0014] In some embodiments, the mold is a graphite mold.

[0015] In some embodiments, the machining includes grinding, wire cutting, and surface treatment.

[0016] In a second aspect, a cobalt oxide target is provided, wherein the cobalt oxide target is prepared by the preparation method.

[0017] In a third aspect, an application of the cobalt oxide target is provided, wherein the cobalt oxide target is used for magnetron sputtering coating.

[0018] Compared with the prior art, the beneficial effects of the present invention are as follows: the present invention obtains a cobalt oxide target material with a single phase, high relative density, low resistivity and stable properties through heat treatment and hot pressing treatment and adopts specific processing parameters, which can meet the requirements of magnetron sputtering for target materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is the appearance of the zirconium oxide target obtained in Example 1;

[0020] Figure 2 This is the XRD pattern of the zirconium oxide target obtained in Example 1;

[0021] Figure 3 This is the appearance of the zirconium oxide target obtained in Comparative Example 1;

[0022] Figure 4 This is the XRD pattern of the zirconium oxide target obtained in Comparative Example 1;

[0023] Figure 5 This is the appearance of the zirconium oxide target obtained in Comparative Example 2;

[0024] Figure 6 is a cross-sectional view of the zirconium oxide target obtained in Comparative Example 3;

[0025] Figure 7 This is a SEM image of the cross section of the zirconia target obtained in Comparative Example 3. DETAILED DESCRIPTION

[0026] In order to facilitate understanding of the present disclosure, the present disclosure will be described more fully below. However, the present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present disclosure more thorough and comprehensive.

[0027] As used herein:

[0028] "Prepared from" is synonymous with "comprising." As used herein, the terms "comprising," "including," "having," "containing," or any other variation thereof, are intended to cover a non-exclusive inclusion. For example, a composition, process, method, article, or apparatus that comprises the listed elements is not necessarily limited to only those elements but may include other elements not expressly listed or inherent to such composition, process, method, article, or apparatus.

[0029] The conjunction "consisting of excludes any unspecified element, step, or component. If used in a claim, this phrase renders the claim closed-ended so that it does not include materials other than those described, except for conventional impurities associated therewith. When the phrase "consisting of" appears in a clause of the body of a claim rather than immediately following the subject matter, it limits only the elements described in that clause; other elements are not excluded from the claim as a whole.

[0030] When amount, concentration or other value or parameter is represented by range, preferred range or a series of upper preferred value and lower preferred value, this should be understood as specifically disclosing all ranges formed by any pairing of any range upper limit or preferred value and any range lower limit or preferred value, regardless of whether the range is disclosed separately. For example, when disclosing range "1-5", described range should be interpreted as including range "1-4", "1-3", "1-2", "1-2 and 4-5", "1-3 and 5" etc. When numerical range is described in this article, unless otherwise stated, the range is intended to include its end value and all integers and fractions within the range.

[0031] In these examples, parts and percentages are by mass unless otherwise indicated.

[0032] "Parts by mass" refers to the basic unit of measurement for expressing the mass ratio of multiple components. 1 part can represent any unit mass, such as 1g or 2.689g. If we say that the mass of component A is a parts and the mass of component B is b parts, it means the ratio of the mass of component A to the mass of component B is a:b. Alternatively, it means that the mass of component A is aK and the mass of component B is bK (K is an arbitrary number, indicating a multiple factor). It should not be misunderstood that, unlike the mass parts, the sum of the mass of all components is not limited to 100 parts.

[0033] "And / or" is used to indicate that one or both of the stated situations may occur, for example, A and / or B includes (A and B) and (A or B).

[0034] In order to solve the problem that the cobalt oxide raw material used for sputtering coating in the prior art is easily oxidized, the first aspect of the present disclosure provides a method for preparing a cobalt oxide target, comprising the following steps:

[0035] The mold filled with cobalt oxide powder is sequentially subjected to vacuuming, heat treatment and hot pressing treatment to obtain a cobalt oxide target blank; wherein the heat treatment temperature is 950-1050°C and the time is 2-4h; the hot pressing temperature is 950-1050°C, the pressure is 30-50MPa, and the time is 0.5-2h;

[0036] The cobalt oxide target blank is machined to obtain a cobalt oxide target material.

[0037] For example, in different embodiments, the temperature of the heat treatment may be, but is not limited to, 950°C, 960°C, 970°C, 980°C, 990°C, 1000°C, 1010°C, 1020°C, 1030°C, 1040°C, or 1050°C.

[0038] For example, in different embodiments, the heat treatment time may be, but is not limited to, 2 h, 2.5 h, 3 h, 3.5 h, or 4 h.

[0039] For example, in different embodiments, the temperature of the hot pressing treatment may be, but is not limited to, 950°C, 960°C, 970°C, 980°C, 990°C, 1000°C, 1010°C, 1020°C, 1030°C, 1040°C, or 1050°C.

[0040] For example, in different embodiments, the pressure of the hot pressing treatment may be, but is not limited to, 30 MPa, 32 MPa, 34 MPa, 36 MPa, 38 MPa, 40 MPa, 42 MPa, 44 MPa, 46 MPa, 48 MPa, or 50 MPa.

[0041] For example, in different embodiments, the time of the hot pressing treatment may be, but is not limited to, 0.5 h, 1 h, 1.5 h, or 2 h.

[0042] The present invention discloses a cobalt oxide target material with single phase, high relative density, low resistivity and stable properties, through heat treatment and hot pressing treatment and adopting specific processing parameters. If the temperature of the heat treatment or hot pressing treatment is too low, the impurity cobalt tetroxide will be present in the cobalt oxide target, and the relative density of the cobalt oxide target will be reduced and the resistivity will be increased; if the temperature of the heat treatment or hot pressing treatment is too high, Co and O in the cobalt oxide target will be easily dissociated. Metal Co belongs to a magnetic material. For the target of magnetic material, most of the magnetic lines of force pass through the inside of the ferromagnetic material, which reduces the magnetic field on the surface of the target, and a very high voltage is required to ignite the target surface; therefore, if the target contains Co element, it will affect the stability of the subsequent sputtering coating of the cobalt oxide target; if the heat treatment or hot pressing treatment time is too long, the cobalt oxide crystals in the cobalt oxide target will be too large and unevenly distributed, which is not conducive to sputtering coating; if the heat treatment or hot pressing treatment time is too short, the impurity cobalt tetroxide will be present in the cobalt oxide target, making the cobalt oxide target not conducive to sputtering coating; if the pressure of the hot pressing treatment is too low or too high, the brittleness of the cobalt oxide target will increase, and it is easy to cause the problem of fragmentation during the subsequent machining process.

[0043] In order to further increase the density of cobalt oxide, the temperature of the heat treatment is the same as that of the hot pressing treatment.

[0044] In some embodiments, the heat treatment step comprises: heating to 950-1050° C. at a rate of 5-10° C. / min and keeping the temperature for 2-4 hours.

[0045] For example, in different embodiments, the heating rate of the heat treatment can be 5°C / min, 6°C / min, 7°C / min, 8°C / min, 9°C / min, or 10°C / min.

[0046] The heating rate of the heat treatment disclosed in the present invention needs to be controlled within an appropriate range. If the heating rate is too low, on the one hand, it will reduce the production efficiency, and on the other hand, it will cause the production of impurity cobalt in the cobalt oxide; if the heating rate is too fast, it will cause uneven sintering inside the cobalt oxide, thereby reducing the yield of the aluminum oxide target.

[0047] In some embodiments, the hot pressing step includes: increasing the pressure to 30-50 MPa at a rate of 0.1-0.6 MPa / min, maintaining the temperature at 950-1050° C. for 0.5-2 h.

[0048] The boost rate of the heat treatment disclosed in the present invention needs to be controlled within an appropriate range. If the boost rate is too low, on the one hand, it will reduce the production efficiency, and on the other hand, it will cause the production of cobalt as an impurity in the cobalt oxide; if the boost rate is too fast, the cobalt oxide may have defects such as cracks and holes, reducing the density of the cobalt oxide target.

[0049] In some embodiments, the vacuuming is performed to a vacuum degree of less than or equal to 10 -1 Pa, for example, can be but not limited to 0.2Pa, 0.4Pa, 0.6Pa, 0.8Pa, 1Pa.

[0050] In some embodiments, the average particle size of the cobalt oxide powder is less than or equal to 10 μm, for example, it can be but not limited to 0.1 μm, 0.5 μm, 1 μm, 1.5 μm, 2 μm, 2.5 μm, 3 μm, 5 μm, 7 μm, 9 μm, and 10 μm.

[0051] In some embodiments, the purity of the cobalt oxide is greater than or equal to 99.99%, for example, it can be but not limited to 99.99%, 99.992%, 99.994%, 99.996% or 99.998%.

[0052] In some embodiments, the mold is a graphite mold.

[0053] In some embodiments, the machining includes grinding, wire cutting, and surface treatment.

[0054] In a second aspect, a cobalt oxide target is provided, wherein the cobalt oxide target is prepared by the preparation method.

[0055] The cobalt oxide target material provided by the present invention has a single phase, high density, purity and chemical stability, and low resistivity, and can meet the high performance requirements of being a magnetron sputtering coating material.

[0056] In a third aspect, an application of the cobalt oxide target is provided, wherein the cobalt oxide target is used for magnetron sputtering coating.

[0057] In order to further illustrate the present invention, the cobalt oxide and the preparation method thereof provided by the present invention are described in detail below in conjunction with the accompanying drawings and examples, but they should not be construed as limiting the scope of protection of the present invention.

[0058] Example 1

[0059] This embodiment provides a method for preparing a cobalt oxide target, comprising the following steps:

[0060] S1: Cobalt oxide powder with a purity of 99.995% and an average particle size of 8 μm is loaded into a graphite mold covered with graphite paper;

[0061] S2: placing the graphite mold filled with cobalt oxide powder in step S1 into a vacuum hot pressing furnace, evacuating to a vacuum degree of 0.8 Pa; then heating to 950°C at a rate of 10°C / min, and keeping warm for 2 hours; then increasing the pressure to 40MPa at a rate of 0.3MPa / min, and keeping warm and pressure for 1 hour at a temperature of 950°C and a pressure of 40MPa. After the end of the heat preservation and pressure preservation, the pressure is released and cooled to room temperature with the furnace to obtain a cobalt oxide target blank;

[0062] S3: Grinding, wire cutting and surface treatment are performed on the cobalt oxide target blank obtained in step S2 to obtain a cobalt oxide target material.

[0063] Example 2

[0064] This embodiment provides a method for preparing a cobalt oxide target, comprising the following steps:

[0065] S1: Cobalt oxide powder with a purity of 99.995% and an average particle size of 8 μm is loaded into a graphite mold covered with graphite paper;

[0066] S2: placing the graphite mold filled with cobalt oxide powder in step S1 into a vacuum hot pressing furnace, evacuating to a vacuum degree of 0.8 Pa; then heating to 1050°C at a rate of 5°C / min, and keeping warm for 4 hours; then increasing the pressure to 30MPa at a rate of 0.1MPa / min, keeping warm and pressure-maintaining for 2 hours at a temperature of 1050°C and a pressure of 30MPa, after which the pressure is released and cooled to room temperature with the furnace to obtain a cobalt oxide target blank;

[0067] S3: Grinding, wire cutting and surface treatment are performed on the cobalt oxide target blank obtained in step S2 to obtain a cobalt oxide target material.

[0068] Example 3

[0069] This embodiment provides a method for preparing a cobalt oxide target, comprising the following steps:

[0070] S1: Cobalt oxide powder with a purity of 99.995% and an average particle size of 8 μm is loaded into a graphite mold covered with graphite paper;

[0071] S2: placing the graphite mold filled with cobalt oxide powder in step S1 into a vacuum hot pressing furnace, evacuating to a vacuum degree of 0.8 Pa; then heating to 1000°C at a rate of 8°C / min, and keeping warm for 3 hours; then increasing the pressure to 50MPa at a rate of 0.6MPa / min, keeping warm and pressure for 0.5h under the conditions of temperature of 1000°C and pressure of 50MPa, after the end of the heat preservation and pressure preservation, releasing the pressure and cooling to room temperature with the furnace to obtain a cobalt oxide target blank;

[0072] S3: Grinding, wire cutting and surface treatment are performed on the cobalt oxide target blank obtained in step S2 to obtain a cobalt oxide target material.

[0073] Comparative Example 1

[0074] The present comparative example provides a method for preparing a cobalt oxide target material, which differs from Example 1 only in that step S2 is different. Step S2 of the present comparative example is: putting the graphite mold filled with cobalt oxide powder in step S1 into a vacuum hot pressing furnace, and evacuating to a vacuum degree of 0.8 Pa; then heating to 950°C at a rate of 10°C / min, and then increasing the pressure to 40MPa at a rate of 0.3MPa / min, and maintaining the temperature and pressure for 3 hours at a temperature of 900°C and a pressure of 40MPa. After the insulation and pressure maintenance is completed, the pressure is released and the furnace is cooled to room temperature to obtain a cobalt oxide target blank; the remaining steps and parameters are the same as those in Example 1.

[0075] Comparative Example 2

[0076] This comparative example provides a method for preparing a cobalt oxide target, which differs from Example 1 only in that the insulation time in step S2 is 5 h; the remaining steps and parameters are the same as those in Example 1.

[0077] Comparative Example 3

[0078] This comparative example provides a method for preparing a cobalt oxide target, which differs from Example 1 only in that the temperatures of the heat treatment and hot pressing treatment in step S2 are both 1100° C.; the remaining steps and parameters are the same as those in Example 1.

[0079] Comparative Example 4

[0080] This comparative example provides a method for preparing a cobalt oxide target, which differs from Example 1 only in that the temperatures of the heat treatment and hot pressing treatment in step S2 are both 900° C.; the remaining steps and parameters are the same as those in Example 1.

[0081] Comparative Example 5

[0082] The present comparative example provides a method for preparing a cobalt oxide target material, which differs from the embodiment 1 only in that step S2 is different. Step S2 of the present comparative example is: putting the graphite mold filled with cobalt oxide powder in step S1 into a vacuum hot pressing furnace, and evacuating to a vacuum degree of 0.8 Pa; then heating to 900°C at a rate of 10°C / min, and keeping warm for 2 hours; then heating to 950°C at a rate of 10°C / min, and at the same time increasing the pressure to 40MPa at a rate of 0.3MPa / min, keeping warm and pressurizing at a temperature of 950°C and a pressure of 40MPa for 1 hour. After the end of the heat preservation and pressure preservation, the pressure is released and the furnace is cooled to room temperature to obtain a cobalt oxide target blank; the remaining steps and parameters are the same as those in the embodiment 1.

[0083] Comparative Example 6

[0084] The present comparative example provides a method for preparing a cobalt oxide target material, which differs from the embodiment 1 only in that step S2 is different. Step S2 of the present comparative example is: putting the graphite mold filled with cobalt oxide powder in step S1 into a vacuum hot pressing furnace, and evacuating to a vacuum degree of 0.8 Pa; then heating to 950°C at a rate of 10°C / min, and keeping warm for 2 hours; then heating to 1100°C at a rate of 10°C / min, and at the same time increasing the pressure to 40MPa at a rate of 0.3MPa / min, and keeping warm and pressurizing for 1 hour under the conditions of temperature of 1100°C and pressure of 40MPa. After the end of the heat preservation and pressure preservation, the pressure is released and the furnace is cooled to room temperature to obtain a cobalt oxide target blank; the remaining steps and parameters are the same as those in the embodiment 1.

[0085] Comparative Example 7

[0086] This comparative example provides a method for preparing a cobalt oxide target material, which differs from Example 1 only in that the pressure of the hot pressing treatment in step S2 is 25 MPa; the remaining steps and parameters are the same as those in Example 1.

[0087] Comparative Example 8

[0088] This comparative example provides a method for preparing a cobalt oxide target material, which differs from Example 1 only in that the pressure of the hot pressing treatment in step S2 is 55 MPa; the remaining steps and parameters are the same as those in Example 1.

[0089] Comparative Example 9

[0090] This comparative example provides a method for preparing a cobalt oxide target material, which differs from Example 1 only in that the pressure increase rate of the hot pressing treatment in step S2 is 0.05 MPa / min; the remaining steps and parameters are the same as those in Example 1.

[0091] Comparative Example 10

[0092] This comparative example provides a method for preparing a cobalt oxide target material, which differs from Example 1 only in that the pressure increase rate of the hot pressing treatment in step S2 is 0.8 MPa / min; the remaining steps and parameters are the same as those in Example 1.

[0093] Comparative Example 11

[0094] This comparative example provides a method for preparing a cobalt oxide target material, which differs from Example 1 only in that the heating rate of the heat treatment in step S2 is 3° C. / min; the remaining steps and parameters are the same as those in Example 1.

[0095] Comparative Example 12

[0096] This comparative example provides a method for preparing a cobalt oxide target, which differs from Example 1 only in that the heating rate of the heat treatment in step S2 is 12° C. / min; the remaining steps and parameters are the same as those in Example 1.

[0097] The following tests were performed on Examples 1-3 and Comparative Examples 1-12. The specific test methods are as follows:

[0098] (1) Relative density: tested according to the Archimedes drainage method;

[0099] (2) Phase: tested by X-ray diffractometer;

[0100] (3) Microstructure: The cross section of the cobalt oxide target was tested using a scanning electron microscope; (4) Resistivity: The resistivity was tested using a four-probe resistance tester;

[0101] (5) Appearance: Visually observe the target surface.

[0102] The test results are shown in Table 1 and Figure 1-7 shown.

[0103] Table 1

[0104]

[0105]

[0106] As can be seen from Table 1, the relative density of the cobalt oxide target material obtained in the present disclosure is 98.6-99.5%, the physical phase is single, and the resistivity is lower than 200Ω / cm.

[0107] Figure 1 This is the appearance of the zirconium oxide target obtained in Example 1; Figure 2 is the XRD pattern of the zirconium oxide target obtained in Example 1; Figure 1 and Figure 2 It can be seen that the cobalt oxide target obtained in the present disclosure is black, has no spots on the surface, and only has the CoO phase.

[0108] Figure 3 This is the appearance of the zirconium oxide target obtained in Comparative Example 1; Figure 3 is the XRD pattern of the zirconium oxide target obtained in Comparative Example 1; Figure 3 and Figure 4 It can be seen that the zirconium oxide target obtained in Comparative Example 1 is black and has many light gray spots on the surface. The light gray spots are scraped off the target and tested with an X-ray diffractometer, which shows that they are Co3O4, indicating that the cobalt oxide target obtained in the comparative example contains more Co3O4 impurities.

[0109] Figure 5 This is the appearance of the zirconium oxide target obtained in Comparative Example 2; Figure 5 It can be seen that the zirconium oxide target obtained in Comparative Example 2 is black, and has light gray spot edges on the surface. The light gray spot edges are scraped off the target and tested with an X-ray diffractometer, which shows that it is a single substance of Co, indicating that the cobalt oxide target obtained in the comparative example contains more single substance Co impurities.

[0110] Figure 6 is a cross-sectional view of the zirconium oxide target obtained in Comparative Example 3, from Figure 6 It can be seen that the crystal structure of the cobalt oxide obtained in Comparative Example 3 is unevenly distributed. The cross section of the zirconium oxide target obtained in Comparative Example 3 was observed using a scanning electron microscope. The results are as follows Figure 7 As shown, it was found that unevenly distributed metal spots existed inside the cobalt oxide obtained in Comparative Example 3.

[0111] Finally, it should be noted that the above embodiments are used to illustrate the technical solution of the present disclosure rather than to limit the protection scope of the present disclosure. Although the present disclosure has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present disclosure can be modified or replaced by equivalents without departing from the essence and scope of the technical solution of the present disclosure.

Claims

1. A method for preparing a cobalt oxide target, characterized in that: The following steps are involved: The mold filled with cobalt oxide powder is sequentially subjected to vacuuming, heat treatment and hot pressing treatment to obtain a cobalt oxide target blank; wherein the heat treatment temperature is 950-1050°C and the time is 2-4h; the hot pressing temperature is 950-1050°C, the pressure is 30-50MPa, and the time is 0.5-2h; The cobalt oxide target blank is machined to obtain a cobalt oxide target material.

2. The method for preparing a cobalt oxide target according to claim 1, characterized in that: The heat treatment step includes: heating to 950-1050° C. at a rate of 5-10° C. / min and keeping the temperature for 2-4 hours.

3. The method for preparing a cobalt oxide target according to claim 1, characterized in that: The hot pressing treatment step includes: increasing the pressure to 30-50 MPa at a rate of 0.1-0.6 MPa / min, maintaining the temperature at 950-1050° C. for 0.5-2 hours.

4. The method for preparing a cobalt oxide target according to claim 1, characterized in that: The vacuum is evacuated to a vacuum degree of less than or equal to 10 -1 Pa.

5. The method for preparing a cobalt oxide target according to claim 1, characterized in that: The average particle size of the cobalt oxide powder is less than or equal to 10 μm.

6. The method for preparing a cobalt oxide target according to claim 1, characterized in that: The purity of the cobalt oxide is greater than or equal to 99.99%.

7. The method for preparing a cobalt oxide target according to claim 1, characterized in that: The mold is a graphite mold.

8. The method for preparing a cobalt oxide target according to claim 1, characterized in that: The machining includes grinding, wire cutting and surface treatment.

9. A cobalt oxide target, characterized in that: The cobalt oxide target is prepared by the preparation method according to any one of claims 1 to 8.

10. A use of the cobalt oxide target material as claimed in claim 9, characterized in that: The cobalt oxide target is used for magnetron sputtering coating.

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