Multi-system chip

By connecting 11 groups of resistors with the same resistance value in parallel on the chip, each resistor is divided into 10,000 copies, forming a multi-digit resistor chip, solving the problem of limited storage capacity of binary chips and significantly improving the storage capacity.

CN119559985APending Publication Date: 2025-03-04王晓虎
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Patent Information

Application Number
CN202411838857.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-13
Publication Date
2025-03-04

AI Technical Summary

Technical Problem

The storage capacity of existing binary chips is limited and cannot meet people's storage needs.

Method used

A multi-central resistor chip is formed by a plurality of parallel resistors. Through 11 groups of resistors with the same resistance value, each resistor is divided into 10,000 parts, and each resistor is stored as 1B, forming a storage capacity of 10,00011B.

Benefits of technology

It greatly improves the storage capacity of resistor chips and solves the problem of limited storage capacity of binary chips.

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Abstract

The invention discloses a multi-system chip, which comprises a plurality of resistors, the plurality of resistors are electrically connected in parallel to form a multi-system resistor chip, the multi-system resistor chip is connected with an input module and an output module, the multi-system resistor chip is provided with a current input line, and the current input line is connected with the output module. And the flow of the current on the current input line is controlled through the resistor. The multi-system resistor chip is formed by a plurality of resistors connected in parallel, the multi-system resistor chip can easily solve the problem that in the prior art, the storage capacity of a binary resistor is limited, the flow of current on a current input line is controlled through the resistors, and the storage capacity of the resistor chip can be greatly improved through the structure.
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Description

Technical Field

[0001] The invention relates to the technical field of resistor chips, in particular to a multi-base chip. Background Art

[0002] Binary chips rely on controlling the switch of current to achieve 0.1 storage. Although the manufacturing technology of the above binary chips is mature, its storage capacity is limited and has reached the storage bottleneck. The binary memory chip in the existing technology can store up to 10,000 4 B, therefore, the above binary chip can no longer meet people's storage needs when in use.

[0003] Therefore, a multi-base chip has become an urgent problem to be solved by the entire society. Summary of the invention

[0004] In order to solve the above technical problems, the technical solution provided by the present invention is: a multi-level chip, including multiple resistors, which are electrically connected in parallel to form a multi-level resistor chip, an input module and an output module are connected to the multi-level resistor chip, and a current input circuit is arranged on the multi-level resistor chip, and the flow of current on the current input circuit is controlled by the above-mentioned resistors.

[0005] Furthermore, the resistors are arranged in 11 groups, and the resistance values ​​of each group of resistors are the same.

[0006] Furthermore, each resistor is divided into 10,000 parts, each part of the resistor is stored as 1B, and the multi-bit resistor chip consisting of 11 groups of resistors is stored as 10,000 11 B.

[0007] The advantages of the invention compared with the prior art are:

[0008] The present invention adopts a plurality of resistors connected in parallel to form a multi-valued resistor chip. The multi-valued resistor chip can easily solve the problem of limited storage capacity of binary resistors in the prior art. The flow rate of current on the current input line is controlled by the resistors. The structure can greatly increase the storage capacity of the resistor chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 The figure is a schematic diagram of the structure of a multi-base chip of the present invention.

[0010] Among them, 1. resistance, 2. input module, 3. output module, 4. current input circuit. DETAILED DESCRIPTION

[0011] The present invention is further described in detail below in conjunction with the accompanying drawings.

[0012] The present invention is described in detail with reference to the accompanying drawings.

[0013] The present invention provides a multi-level chip in a specific implementation, including multiple resistors 1, which are electrically connected in parallel to form a multi-level resistor chip. An input module 2 and an output module 3 are connected to the multi-level resistor chip. A current input circuit 4 is arranged on the multi-level resistor chip, and the flow of current on the current input circuit 4 is controlled by the above-mentioned resistors.

[0014] Embodiment 1:

[0015] When the present invention is used, the resistor 1 is provided with 11 groups, and the resistance value of each group of resistors is the same. Each resistor is divided into 10000 parts, and each part of the resistor is stored as 1B. The multi-integer resistor chip composed of 11 groups of resistors is stored as 10000. 11 B. Compared with the existing technology of binary chip storage 10000 4 B, greatly improving the storage capacity of the resistor chip.

[0016] Embodiment 2:

[0017] When the present invention is used, the resistor 1 is provided with 10 in total, and the resistance value of each group of resistors is the same. Each resistor is divided into 10000 parts, and each part of the resistor is stored as 1B. The multi-integer resistor chip composed of 11 groups of resistors is stored as 10000. 10 B. Compared with the existing technology of binary chip storage 10000 4 B, greatly improving the storage capacity of the resistor chip.

[0018] Embodiment three:

[0019] When the present invention is used, the resistor 1 is provided with 9 resistors in total, and the resistance value of each group of resistors is the same. Each resistor is divided into 10000 parts, and each part of the resistor is stored as 1B. The multi-integer resistor chip composed of 11 groups of resistors is stored as 10000. 9 Compared with the existing technology of binary chip storage 10000 4 B, greatly improving the storage capacity of the resistor chip.

[0020] The multi-level resistor chip in the present invention controls the flow of current through resistors, and the structure of the multi-level chip is simple and practical.

[0021] Similarly, when the present invention is used, the number of resistor components of the multi-level resistor can be adjusted as needed.

[0022] The present invention and its embodiments are described above, and such description is not restrictive. The drawings show only one embodiment of the present invention, and the actual structure is not limited thereto. In short, if ordinary technicians in the field are inspired by it, without departing from the purpose of the invention, they can design a structure and embodiment similar to the technical solution without creativity, which should belong to the protection scope of the present invention.

Claims

1. A multi-base chip, characterized in that: The invention comprises a plurality of resistors (1), wherein the plurality of resistors (1) are electrically connected in parallel to form a multi-valued resistor chip, an input module (2) and an output module (3) are connected to the multi-valued resistor chip, a current input circuit (4) is arranged on the multi-valued resistor chip, and the flow rate of the current on the current input circuit (4) is controlled by the resistors.

2. A multi-base chip according to claim 1, characterized in that: The resistors (1) are provided in 11 groups in total, and the resistance values ​​of each group of resistors are the same.

3. A multi-base chip according to claim 2, characterized in that: Each resistor is divided into 10,000 parts, each part of the resistor is stored as 1B, and the multi-bit resistor chip composed of 11 groups of resistors is stored as 10,000 11 B.