Monocrystalline silicon wafer degumming equipment

By using sponge blocks in the single crystal silicon wafer degumming equipment to block the glue flow and combining the technology of rotation and suction pump, the problem of degumming efficiency caused by the flow of glue to the surface of the silicon wafer is solved, and efficient degumming of single crystal silicon wafers is achieved.

CN119560407AActive Publication Date: 2025-03-04LINTON KAYEX TECH CO LTD
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Patent Information

Application Number
CN202411583830.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-07
Publication Date
2025-03-04
Estimated Expiration
2044-11-07

AI Technical Summary

Technical Problem

During the degumming process of existing single crystal silicon wafer degumming, the glue softens and flows to the surface of the silicon wafer, resulting in a decrease in degumming efficiency.

Method used

A single crystal silicon wafer degumming equipment is designed, using sponge blocks to block the softened glue flow, and through the cooperation of rotation and suction pump, the glue is fully in contact with the degumming liquid and improves the degumming efficiency.

Benefits of technology

By blocking the glue from flowing to the surface of the silicon wafer, the adhesion between the silicon wafer and the glue is reduced, the degumming efficiency between the crystal support and the silicon wafer is improved, and the glue and the degumming liquid are ensured to be fully in contact with the degumming liquid, and the degumming process is quickly completed.

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Abstract

The invention belongs to the technical field of monocrystalline silicon wafer degumming, and particularly relates to monocrystalline silicon wafer degumming equipment which comprises a machine body used for containing degumming liquid and a plurality of bearing assemblies used for supporting monocrystalline silicon wafers, and further comprises a support installed in the machine body in a sliding mode and used for containing a crystal support; the two telescopic rods are symmetrically installed in the machine body, the bearing assembly is installed on the telescopic rods, and the bearing assembly comprises a first semi-ring plate, a second semi-ring plate, a third semi-ring plate and a fourth semi-ring plate, the connecting plate is fixedly mounted on the first semi-ring plate; the wiping block is installed on the first semi-ring plate and comprises a fixing plate and a sponge block, and the sponge block is installed on the side, close to the silicon wafer, of the fixing plate; by arranging the sponge block, the problem that glue flows to the surface of the silicon wafer in the softening process is avoided, and due to the influence of adhesive force between the silicon wafer and the glue, compared with the mode that the glue flows to the surface of the silicon wafer, the mode reduces the influence of the adhesive force between the silicon wafer and the glue, and the degumming efficiency of the crystal support and the silicon wafer can be improved.
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Description

Technical Field

[0001] The invention belongs to the field of single crystal silicon wafer degumming, in particular to a single crystal silicon wafer degumming device. Background Art

[0002] Since monocrystalline silicon wafers have the advantages of long life and good stability, they have become a key material for solar panels. Monocrystalline silicon wafers are cut from silicon rods. During the cutting process, glue is needed to fix the silicon rods on the crystal tray. Therefore, degumming equipment is needed to separate the monocrystalline silicon wafers and the crystal tray before further processing.

[0003] A patent application with publication number CN117259319A discloses an automatic degumming device for single crystal silicon wafer production, including a crystal tray, and also includes: a degumming tank containing degumming liquid and a side clamping mechanism installed in the degumming tank, the side clamping mechanism is used to clamp the silicon wafer; by immersing the silicon wafer and the crystal tray in the degumming liquid, the silicon wafer and the crystal tray are separated and degummed.

[0004] The above scheme achieves the purpose of separating the silicon wafer from the wafer tray by dissolving the glue between the silicon wafer and the wafer tray with the degumming liquid. During the immersion process, the glue is first softened and then decomposed. During the softening process, the glue changes from a solid state to a flowable liquid state. When softened, the liquid glue will flow to the surface of the silicon wafer under the action of gravity, thereby increasing the proportion of glue on the surface of the silicon wafer, making the decomposition process of the glue on the silicon wafer difficult and reducing the degumming efficiency.

[0005] To this end, the present invention provides a single crystal silicon wafer degumming device. Summary of the invention

[0006] In order to make up for the deficiencies of the prior art, at least one technical problem raised in the background technology is solved.

[0007] The technical solution adopted by the present invention to solve its technical problem is: a single crystal silicon wafer degumming device described in the present invention includes a body for containing degumming liquid and a plurality of receiving components for supporting single crystal silicon wafers, and also includes: a bracket slidably installed in the body, the bracket is used to place a crystal tray; two groups of telescopic rods symmetrically and slidably installed in the body, the receiving component is installed between the two symmetrically arranged telescopic rods, the receiving component includes: two No. 1 semi-ring plates symmetrically installed on the telescopic rods; a connecting plate fixedly installed on the No. 1 semi-ring plate; a wiping block installed on the No. 1 semi-ring plate, the wiping block includes a fixed plate and a sponge block, and the sponge block is installed on the side of the fixed plate close to the silicon wafer.

[0008] Preferably, the receiving assembly also includes: two fixing rods fixedly mounted on the telescopic rod; a groove provided on the No. 1 semi-ring plate, the wiper block slides on the No. 1 semi-ring plate through a fixing plate, and the groove contains a plurality of wiper blocks; a No. 2 semi-ring plate rotatably mounted on the fixing rod; a connecting rod connecting the No. 2 semi-ring plate and the fixing plate, the plurality of connecting rods being evenly divided into two groups, and the two groups of connecting rods being respectively connected to the two No. 2 semi-ring plates; and a round block rotatably mounted on the fixing rod, the round block being used to drive the No. 2 semi-ring plate to rotate.

[0009] Preferably, the second half ring plate is of a special shape, the connecting rod adopts a telescopic structure, and after the connecting rod drives the wiper to rotate until it is out of contact with the wafer holder, the wiper slides on the second half ring plate in a direction away from the silicon wafer.

[0010] Preferably, a plurality of No. 1 cavities are provided on the No. 2 semi-ring plate, the connecting rod adopts a hollow structure, and the No. 1 cavities, the connecting rod and the fixed plate are connected.

[0011] Preferably, a protrusion is fixedly mounted on the connecting plate, the protrusion is located within the moving range of the wiping block, and the protrusion is used to squeeze the sponge block.

[0012] Preferably, the connecting plate comprises a plurality of the protrusions, and the sponge block is squeezed multiple times by the plurality of the protrusions during one rotation.

[0013] Preferably, the receiving assembly also includes a No. 2 annular block rotatably mounted on the connecting plate, and the No. 2 annular block is used to be combined with the connecting plate to fix the crystal between the No. 2 annular block and the connecting plate. The device also includes a slide plate slidably mounted on the inner wall of the body and a slider slidably mounted on the slide plate, and the telescopic rod is rotatably mounted on the slider.

[0014] Preferably, a leakage hole is provided on the protrusion, and a second cavity is formed between the protrusion and the connecting plate. When the sponge block is squeezed by the protrusion, the liquid in the sponge block flows into the second cavity through the leakage hole. A accommodating cavity is provided in the body, and a second pump body is installed in the accommodating cavity, and the second pump body is connected to the second cavity.

[0015] Preferably, a plurality of elastic blocks are installed on the surface of the protruding block and the second annular block close to the side wall of the silicon wafer.

[0016] Preferably, a No. 1 annular block is fixedly mounted on the fixing rod, a plurality of circular holes are provided on the inner side of the No. 2 semi-annular plate, the No. 2 semi-annular plate is connected with the No. 1 annular block through the circular holes, a No. 1 pump body is provided at the bottom of the machine body, and the No. 1 pump body is connected with the No. 1 annular block through the fixing rod.

[0017] The beneficial effects of the present invention are as follows: 1. The single crystal silicon wafer degumming equipment described in the present invention blocks the softened glue by setting a sponge block, thereby avoiding the problem that the glue flows to the surface of the silicon wafer during the softening process. Since there is an adhesive force between the silicon wafer and the glue, compared with the glue flowing to the surface of the silicon wafer, this method reduces the influence of the adhesive force between the silicon wafer and the glue, and can accelerate the degumming efficiency of the crystal support and the silicon wafer. In conjunction with the second semi-ring plate, the multiple sponge blocks are rotated to drive the degumming liquid near the sponge blocks to flow, so that the glue on the crystal support and the silicon wafer can fully contact with the degumming liquid. 2. The single crystal silicon wafer degumming equipment described in the present invention is configured with a No. 1 suction pump to adsorb the solution and softened glue near the sponge block into the interior of the sponge block, and cooperates with the convex block to squeeze the solution and softened glue in the sponge block into the No. 2 cavity, and pumps it into the containing cavity for storage through the No. 2 pump body. Since the solution adsorbed in the sponge block has a higher proportion of dissolved glue and a lower proportion of degumming liquid, the No. 2 pump body pumps this part of the solution into the containing cavity for storage, so that the degumming liquid in the solution in the body is still at a higher proportion, which is beneficial for the glue on the silicon wafer and the crystal tray to fully contact with the degumming liquid, and the glue on the silicon wafer and the crystal tray can be quickly degummed. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The present invention will be further described below in conjunction with the accompanying drawings.

[0019] Figure 1 is a three-dimensional diagram of the first embodiment of the present invention; Figure 2 is a cross-sectional view of a machine body of the present invention; Figure 3 It is a structural schematic diagram of the telescopic rod of the present invention; Figure 4 It is a structural schematic diagram of the wiper block of the present invention; Figure 5 It is a structural schematic diagram of the circular hole of the present invention; Figure 6 is a cross-sectional view of the second half ring plate of the present invention; Figure 7 It is a structural schematic diagram of the groove of the present invention; Figure 8 It is a schematic diagram of the mechanism of the projection of the present invention; Fig. 9 is a cross-sectional view of the projection and the connecting plate of the present invention; In the figure: 1. body; 2. receiving assembly; 21. semi-ring plate No. 1; 22. connecting plate; 23. wiping block; 231. fixing plate; 232. sponge block; 24. fixing rod; 25. groove; 28. semi-ring plate No. 2; 29. ​​connecting rod; 210. round block; 211. convex block; 212. ring block No. 2; 3. bracket; 4. telescopic rod; 5. cavity No. 1; 6. slide plate; 7. slider; 8. leakage hole; 9. cavity No. 2; 10. pump body No. 2; 11. accommodating chamber; 12. elastic block; 13. ring block No. 1; 14. round hole; 15. pump body No. 1. DETAILED DESCRIPTION

[0020] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the present invention is further explained below in conjunction with specific implementation methods.

[0021] like Figure 1-9 As shown, a single crystal silicon wafer degumming device described in an embodiment of the present invention includes a body 1 for containing a degumming liquid and a plurality of receiving components 2 for supporting single crystal silicon wafers, and also includes: a bracket 3 slidably mounted in the body 1, the bracket 3 is used to place a crystal tray; two groups of telescopic rods 4 symmetrically and slidably mounted in the body 1, the receiving component 2 is mounted between two symmetrically arranged telescopic rods 4, the receiving component 2 includes: two No. 1 semi-ring plates 21 fixedly mounted on the telescopic rods 4; a connecting plate 22 fixedly mounted on the No. 1 semi-ring plate 21; a wiping block 23 mounted on the No. 1 semi-ring plate 21, the wiping block 23 includes a fixed plate 231 and a sponge block 232, and the sponge block 232 is mounted on the side of the fixed plate 231 close to the silicon wafer.

[0022] Specifically, the existing device immerses the silicon wafer and the crystal tray in a degumming liquid, and the degumming liquid dissolves the glue between the silicon wafer and the crystal tray to achieve the purpose of separating the silicon wafer and the crystal tray. During the immersion process, the glue is first softened and then decomposed. During the softening process, the glue changes from a solid state to a flowable liquid state. Due to the softening, the liquid glue will flow to the surface of the silicon wafer under the action of gravity, so that the proportion of glue on the surface of the silicon wafer increases, making the decomposition process of the glue on the silicon wafer difficult and the degumming efficiency reduced; the degumming liquid can use acetone solvent, and the bracket 3 can move up and down and forward and backward The telescopic rod 4 can move up and down. When working, the crystal support and the silicon wafer are soaked in the degumming liquid, and the bracket 3 is slid forward and backward to fix the crystal support on the bracket 3. After the crystal support is fixed, the telescopic rod 4 is controlled to extend in the direction close to the silicon wafer, and the telescopic rod 4 is controlled to move upward at the same time. The extension and upward movement of the telescopic rod 4 drive the first semi-ring plate 21 to move synchronously, and the movement of the first semi-ring plate 21 drives the connecting plate 22 and the wiping block 23 to move synchronously until the sponge block 232 of the wiping block 23 is in contact with the silicon wafer. At this time, the sponge block 232 is located below the connection point between the crystal support and the silicon wafer. When the glue at the connection point of the silicon wafer softens into a liquid state, the wiping block 23 can prevent the softened glue from flowing to other areas of the silicon wafer. After the sponge block 232 is attached to the silicon wafer, the telescopic rod 4 and the bracket 3 are controlled to move up and down synchronously, driving the crystal tray and the silicon wafer to move up and down synchronously, so that the degumming liquid in the body 1 is shaken, so that the liquid glue on the sponge block 232 is fully in contact with the degumming liquid, and the decomposition of the degumming liquid is accelerated until the silicon wafer is separated from the crystal tray. After the silicon wafer is separated from the crystal tray, the silicon wafer falls on the connecting plate 22, and the separation of the silicon wafer and the crystal tray is completed. Action, continue to control the telescopic rod 4 and the bracket 3 to move back and forth up and down until the glue on the surface of the silicon wafer and the crystal tray is completely decomposed, that is, the debonding action of the silicon wafer and the crystal tray is completed; by setting the sponge block 232, the problem of the glue flowing to the surface of the silicon wafer during the softening process is avoided, and the glue blocked on the sponge block 232 can be dispersed in the debonding liquid during the shaking process. Due to the influence of the adhesion between the silicon wafer and the glue, compared with the glue flowing to the surface of the silicon wafer, this method reduces the influence of the adhesion between the silicon wafer and the glue, and can speed up the debonding efficiency of the crystal tray and the silicon wafer.

[0023] like Figure 2 , Figure 4 , Figure 5 and Figure 7As shown, the receiving assembly 2 also includes: two fixing rods 24 fixedly mounted on the telescopic rod 4; a groove 25 provided on the first semi-ring plate 21, the wiper block 23 slides on the first semi-ring plate 21 through a fixing plate 231, and the groove 25 contains a plurality of wiper blocks 23; a second semi-ring plate 28 rotatably mounted on the fixing rod 24; a connecting rod 29 connecting the second semi-ring plate 28 and the fixing plate 231, wherein the plurality of connecting rods 29 are evenly divided into two groups, and the two groups of connecting rods 29 are respectively connected to the two second semi-ring plates 28; and a round block 210 rotatably mounted on the fixing rod 24, wherein the round block 210 is used to drive the second semi-ring plate 28 to rotate.

[0024] Specifically, the position of the two sponge blocks 232 under the crystal support is taken as the working station. After the sponge block 232 is bonded to the silicon wafer, the round block 210 is controlled to rotate counterclockwise. The rotation of the round block 210 drives the second semi-ring plate 28 to rotate synchronously. The rotation of the second semi-ring plate 28 causes the connecting rod 29 to rotate synchronously. The rotation of the connecting rod 29 drives the wiping block 23 to rotate, so that the wiping block 23 under the crystal support leaves the working station, and the wiping blocks 23 at other positions enter the working station, so that each wiping block 23 rotates, driving the degumming liquid near the silicon wafer to flow, so that the silicon wafer and the crystal support can fully contact with the degumming liquid, thereby accelerating the degumming efficiency of the crystal support and the silicon wafer. Compared with the shaking method, it avoids the problem of collision and damage between the silicon wafer and the crystal support.

[0025] like Figure 4 and Figure 7 As shown, the second half ring plate 28 is of a special shape, and the connecting rod 29 adopts a telescopic structure. After the connecting rod 29 drives the wiper 23 to rotate until it is not in contact with the wafer holder, the wiper 23 slides on the second half ring plate 28 in a direction away from the silicon wafer.

[0026] Specifically, since the second semi-ring plate 28 adopts a special shape, after the sponge block 232 rotates to leave the working station, the sponge block 232 simultaneously moves away from the silicon wafer until the silicon wafer is no longer in contact with the sponge block 232, so as to avoid the problem of glue adhering to other positions of the silicon wafer during the rotation of the sponge block 232.

[0027] like Figure 6 As shown, a plurality of No. 1 cavities 5 are provided on the No. 2 semi-ring plate 28 , and the connecting rod 29 adopts a hollow structure. The No. 1 cavities 5 , the connecting rod 29 and the fixing plate 231 are connected.

[0028] like Figure 4 , Figure 8 and Fig. 9As shown, a protrusion 211 is fixedly mounted on the connecting plate 22 , and the protrusion 211 is located within the moving range of the wiping block 23 . The protrusion 211 is used to squeeze the sponge block 232 .

[0029] Specifically, before work, the first cavity 5 can be connected to the suction pump. When the sponge block 232 is located at the working station, the suction pump generates a suction force on the sponge block 232 through the first cavity 5, the connecting rod 29 and the fixing plate 231, so that the glue on the sponge block 232 can be adsorbed into the inside of the sponge block 232, and the liquid near the sponge block 232 can be sucked away, so that the silicon wafer and the crystal support are fully in contact with the degumming liquid. After the sponge block 232 leaves the working station, the suction of the sponge block 232 is stopped. After leaving the working station, the sponge block 232 moves away from the silicon wafer. The sponge block 232 moves in the direction of the wafer, that is, the sponge block 232 moves in the direction close to the bump 211. After the sponge block 232 contacts the bump 211, the sponge block 232 continues to rotate in the opposite direction, so that the sponge block 232 contacts the protrusion on the bump 211, and the sponge block 232 is squeezed, so that the glue in the sponge block 232 is squeezed out, and the sponge block 232 continues to rotate. When the sponge block 232 is not in contact with the bump 211, the sponge block 232 absorbs the degumming liquid again and rotates toward the working station, and this cycle is repeated so that the crystal support and the silicon wafer are continuously in contact with the clean sponge block 232.

[0030] like Figure 8 As shown, the connecting plate 22 includes a plurality of protrusions 211 , and the sponge block 232 is squeezed multiple times by the protrusions 211 during one rotation.

[0031] Specifically, by providing a plurality of protrusions, the sponge block 232 can be squeezed multiple times to avoid the problem that the glue on the sponge block 232 re-adheres to the crystal tray and the silicon wafer when the sponge block 232 contacts the crystal tray and the silicon wafer.

[0032] like Figure 3 and Figure 4 As shown, the receiving assembly 2 also includes a No. 2 annular block 212 rotatably mounted on the connecting plate 22, and the No. 2 annular block 212 is used to be combined with the connecting plate 22 to fix the crystal between the No. 2 annular block 212 and the connecting plate 22. The device also includes a slide plate 6 slidably mounted on the inner wall of the body 1 and a slider 7 slidably mounted on the slide plate 6, and the telescopic rod 4 is rotatably mounted on the slider 7.

[0033] Specifically, after the crystal tray and the silicon wafer are separated, there is still undecomposed glue on the surface of the silicon wafer. At this time, the No. 2 annular block 212 can be controlled to rotate counterclockwise until the ring formed by the No. 2 annular block 212 and the connecting plate 22 fixes the silicon wafer inside, and then the slide plate 6 is controlled to move downward to drive the slider 7, the telescopic rod 4, the support assembly and the silicon wafer to move downward synchronously. While moving downward, the slider 7 is controlled to slide back and forth on the slide plate 6, driving the telescopic rod 4, the support assembly and the silicon wafer to slide back and forth synchronously, so that the distance between the two adjacent silicon wafers is increased, and then the telescopic rod 4 is controlled to rotate, driving the support assembly and the silicon wafer to rotate synchronously, which helps to quickly decompose the glue on the silicon wafer.

[0034] like Figure 2 , Figure 8 and Fig. 9 As shown, a leakage hole 8 is provided on the protrusion 211, and a second cavity 9 is formed between the protrusion 211 and the connecting plate 22. When the sponge block 232 is squeezed by the protrusion 211, the liquid in the sponge block 232 flows into the second cavity 9 through the leakage hole 8. A accommodating cavity 11 is provided in the body 1, and a second pump body 10 is installed in the accommodating cavity 11. The second pump body 10 is connected to the second cavity 9.

[0035] Specifically, the No. 2 pump body 10 adopts a suction pump. After the sponge block 232 leaves the working station, the sponge block 232 moves to contact with the bump 211 and contacts with the protrusion of the bump 211. At this time, the glue adsorbed in the sponge block 232 is squeezed, and the squeezed glue enters the accommodating chamber 11 from the leak hole 8. The No. 2 pump body 10 draws the glue in the accommodating chamber 11 and the solution therein into the accommodating chamber 11 by suction; since the solution adsorbed in the sponge block 232 has a higher proportion of dissolved glue and a lower proportion of degumming liquid, this part of the solution is pumped into the accommodating chamber 11 through the No. 2 pump body 10 for storage, so that the degumming liquid in the solution in the body 1 is still at a higher proportion, which is beneficial for the glue on the silicon wafer and the crystal tray to fully contact with the degumming liquid, and the glue on the silicon wafer and the crystal tray to quickly degummed.

[0036] like Figure 4 As shown, a plurality of elastic blocks 12 are installed on the surface of the protruding block 211 and the second annular block 212 close to the side wall of the silicon wafer.

[0037] Specifically, by providing the elastic block 12, it is possible to avoid the problem that the silicon wafer collides with the bump 211 during the debonding process and thus causes damage to the silicon wafer.

[0038] like Figure 2 , Figure 4 , Figure 5 and Figure 6As shown, a No. 1 annular block 13 is fixedly mounted on the fixing rod 24, a plurality of circular holes 14 are provided on the inner side of the No. 2 semi-annular plate 28, and the No. 2 semi-annular plate 28 is connected with the No. 1 annular block 13 through the circular holes 14, and a No. 1 pump body 15 is provided at the bottom of the machine body 1, and the No. 1 pump body 15 is connected with the No. 1 annular block 13 through the fixing rod 24.

[0039] Specifically, the No. 1 pump body 15 adopts a suction pump. When working, the No. 1 pump body 15 is started, and the No. 1 pump body 15 generates a suction force on the upper surface of the No. 1 annular block 13 through the fixed rod 24. Since the upper surface of the No. 1 annular block 13 is in contact with the inner wall of the No. 2 semi-ring plate 28, when the circular hole 14 on the No. 1 cavity 5 at the working station is in contact with the upper surface of the No. 1 annular block 13, suction can be generated on the sponge block 232 at the working station through the No. 1 cavity 5, so that the solution and glue near the sponge block 232 are adsorbed into the inside of the sponge block 232.

[0040] Working principle: the position of the two sponge blocks 232 under the crystal support is taken as the working position. Before working, the No. 1 pump body 15 can be connected to the fixing rod 24. During working, the crystal support and the silicon wafer are soaked in the degumming liquid, and the bracket 3 is slid back and forth so that the crystal support is fixed on the bracket 3. After the crystal support is fixed, the telescopic rod 4 is controlled to extend in the direction close to the silicon wafer, and the telescopic rod 4 is controlled to move upward at the same time. The extension and upward movement of the telescopic rod 4 drive the No. 1 semi-ring plate 21 to move synchronously, and the movement of the No. 1 semi-ring plate 21 drives the connecting plate 22 and the wiping block 23 to move synchronously until the sponge block 232 of the wiping block 23 fits with the silicon wafer and the crystal support. At this time, the sponge block 232 is located below the connection point between the crystal support and the silicon wafer, and the glue and the seawater at the connection point between the crystal support and the silicon wafer are bonded. The degumming liquid in the sponge block 232 comes into contact, softens first and then decomposes, and the No. 1 pump body 15 generates a suction force on the upper surface of the No. 1 annular block 13 through the fixed rod 24. Since the upper surface of the No. 1 annular block 13 is in contact with the inner wall of the No. 2 semi-annular plate 28, when the circular hole 14 on the No. 1 cavity 5 in the working position is in contact with the upper surface of the No. 1 annular block 13, the No. 1 cavity 5 can generate suction on the sponge block 232 in the working position, so that the solution and softened glue near the sponge block 232 are adsorbed into the inside of the sponge block 232, and the circular block 210 is controlled to rotate counterclockwise. The rotation of the circular block 210 drives the No. 2 semi-annular plate 28 to rotate synchronously. The rotation of the No. 2 semi-annular plate 28 causes the connecting rod 29 to rotate synchronously. The connecting rod 29 rotates The rotation drives the wiper block 23 to rotate, so that the wiper block 23 located under the crystal support leaves the working station, and the wiper blocks 23 at other positions enter the working station, so that each wiper block 23 rotates, driving the degumming liquid near the silicon wafer to flow. After leaving the working station, the sponge block 232 moves in the direction away from the silicon wafer, that is, the sponge block 232 moves in the direction close to the bump 211. When the sponge block 232 contacts the bump 211, the sponge block 232 continues to rotate in the opposite direction, so that the sponge block 232 contacts the protrusion on the bump 211, and the sponge block 232 is squeezed. The squeezed glue enters the accommodating chamber 11 from the leak hole 8. The second pump body 10 draws the glue and the solution in the accommodating chamber 11 into the accommodating chamber 11 by suction. After squeezing The sponge block 232 absorbs the nearby solution and rotates back to the working station, and the cycle continues until the silicon wafer is separated from the crystal tray. After the silicon wafer is separated from the crystal tray, the silicon wafer falls on the receiving plate 22, and the action of separating the silicon wafer from the crystal tray is completed. Then, the slide plate 6 is controlled to move downward to drive the slider 7, the telescopic rod 4, the support assembly and the silicon wafer to move downward synchronously. While moving downward, the slider 7 is controlled to slide back and forth on the slide plate 6, driving the telescopic rod 4, the support assembly and the silicon wafer to slide back and forth synchronously, so that the distance between the two adjacent silicon wafers is increased. Then, the telescopic rod 4 is controlled to rotate, driving the support assembly and the silicon wafer to rotate synchronously, which helps to quickly decompose the glue on the silicon wafer until all the glue on the surface of the silicon wafer is decomposed, and the action of debonding the silicon wafer is completed.

[0041] The above shows and describes the basic principles, main features and advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. A single crystal silicon wafer degumming device, comprising a body (1) for containing a degumming liquid and a plurality of receiving components (2) for supporting the single crystal silicon wafer, characterized in that: Also includes: A bracket (3) slidably mounted in the body (1), the bracket (3) being used to place a crystal tray; Two groups of telescopic rods (4) are symmetrically and slidably mounted in the body (1), the receiving assembly (2) is mounted between the two symmetrically arranged telescopic rods (4), and the receiving assembly (2) comprises: Two No. 1 half-ring plates (21) symmetrically mounted on the telescopic rod (4); A connecting plate (22) fixedly mounted on the first half ring plate (21); A cleaning block (23) is mounted on the first semi-ring plate (21), wherein the cleaning block (23) comprises a fixed plate (231) and a sponge block (232), wherein the sponge block (232) is mounted on a side of the fixed plate (231) close to the silicon wafer.

2. The single crystal silicon wafer debonding device according to claim 1, characterized in that: The receiving component (2) further comprises: Two fixing rods (24) fixedly mounted on the telescopic rod (4); A groove (25) is provided on the first semi-ring plate (21), the wiper block (23) slides on the first semi-ring plate (21) via a fixing plate (231), and the groove (25) contains a plurality of wiper blocks (23); Rotating the second half ring plate (28) mounted on the fixing rod (24); A connecting rod (29) connecting the second semi-ring plate (28) and the fixed plate (231), wherein a plurality of the connecting rods (29) are evenly divided into two groups, and the two groups of connecting rods (29) are respectively connected to two second semi-ring plates (28); A round block (210) mounted on the fixing rod (24) is rotatably mounted, and the round block (210) is used to drive the second half ring plate (28) to rotate.

3. The single crystal silicon wafer debonding device according to claim 2, characterized in that: The second semi-ring plate (28) is of a special shape, the connecting rod (29) adopts a telescopic structure, and after the connecting rod (29) drives the wiper block (23) to rotate until it is out of contact with the wafer holder, the wiper block (23) slides on the second semi-ring plate (28) in a direction away from the silicon wafer.

4. The single crystal silicon wafer debonding device according to claim 2, characterized in that: A plurality of No. 1 cavities (5) are provided on the No. 2 semi-ring plate (28), the connecting rod (29) has a hollow structure, and the No. 1 cavities (5), the connecting rod (29) and the fixing plate (231) are connected.

5. The single crystal silicon wafer debonding device according to claim 3, characterized in that: A protrusion (211) is fixedly mounted on the connecting plate (22); the protrusion (211) is located within the moving range of the wiping block (23); and the protrusion (211) is used to squeeze the sponge block (232).

6. The single crystal silicon wafer debonding device according to claim 5, characterized in that: The connecting plate (22) comprises a plurality of protrusions (211), and the sponge block (232) is squeezed multiple times by the plurality of protrusions (211) during one rotation.

7. The single crystal silicon wafer debonding device according to claim 6, characterized in that: The receiving assembly (2) further comprises a second annular block (212) rotatably mounted on the connecting plate (22), the second annular block (212) being used to be combined with the connecting plate (22) to fix the crystal between the second annular block (212) and the connecting plate (22), the device further comprises a slide plate (6) slidably mounted on the inner wall of the body (1) up and down and a slider (7) slidably mounted on the slide plate (6), the telescopic rod (4) being rotatably mounted on the slider (7).

8. The single crystal silicon wafer debonding device according to claim 7, characterized in that: The convex block (211) is provided with a leakage hole (8), and a second cavity (9) is formed between the convex block (211) and the connecting plate (22). When the sponge block (232) is squeezed by the convex block (211), liquid in the sponge block (232) flows into the second cavity (9) through the leakage hole (8). The machine body (1) is provided with a receiving cavity (11), and a second pump body (10) is installed in the receiving cavity (11). The second pump body (10) is in communication with the second cavity (9).

9. The single crystal silicon wafer debonding device according to claim 8, characterized in that: A plurality of elastic blocks (12) are installed on a surface of the protruding block (211) and the second annular block (212) close to the side wall of the silicon wafer.

10. The single crystal silicon wafer debonding device according to claim 9, characterized in that: A No. 1 annular block (13) is fixedly mounted on the fixing rod (24); a plurality of circular holes (14) are provided on the inner side of the No. 2 semi-annular plate (28); the No. 2 semi-annular plate (28) is connected to the No. 1 annular block (13) through the circular holes (14); a No. 1 pump body (15) is provided at the bottom of the machine body (1); the No. 1 pump body (15) is connected to the No. 1 annular block (13) through the fixing rod (24).

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