SiC epitaxial splitting detection method and system

Abstract

The invention relates to the technical field of semiconductors, in particular to a SiC epitaxial splitting detection method and system.According to the SiC epitaxial splitting detection method and system, a wafer, a graphite ring and a graphite disc which are combined are smoothly taken out from an epitaxial growth environment, and edge searching and deviation rectifying of the graphite disc and the graphite ring are independently completed through a deviation rectifying platform and a combining and splitting module; a large amount of reference calibration time among a manipulator, an edge finder, a deviation rectifying platform and a merging and splitting module is saved, the calculation complexity of equipment is reduced, and the wafer positioning efficiency is effectively improved; then, the graphite disc and the graphite ring are combined, cleaned and stored, so that normal use in subsequent processing is facilitated; by arranging the laser sensor, whether the wafer is smoothly separated from the graphite ring or not is automatically detected, and wafer positioning errors caused by manual work are reduced, so that the accuracy and efficiency of wafer processing are ensured, and the automation level and the product quality of wafer processing are improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a SiC epitaxial splitting detection method and system. Background Art

[0002] Generally, a semiconductor device manufacturing process is performed by repeatedly performing a plurality of unit processes, such as an exposure process, an etching process, a diffusion process, a deposition process, and a metal process on a wafer, and the wafer loaded on a carrier within the facility is introduced or taken out by a wafer transfer device.

[0003] The wafer transfer device is equipped with a robot that supports the wafer at the front end of the arm. The wafer is transferred while being supported by the robot. The wafer is supported by a carrier during transfer, which facilitates the smooth loading of the wafer into the epitaxial equipment. However, the traditional detection method can no longer meet the production needs of wafer manufacturers. The traditional detection method not only causes manufacturers to spend more labor costs, but also affects production efficiency due to manual errors caused by operators, reducing processing quality. Summary of the invention

[0004] In view of the deficiencies in the prior art, the present invention provides a SiC epitaxial splitting detection method and system, which independently complete the edge finding and correction of the graphite disk and the graphite ring through a correction platform and a merging and splitting module, saving the reference calibration time between the manipulator, the edge finder, the correction platform and the merging and splitting module, reducing the calculation complexity of the equipment, automatically detecting whether the wafer is successfully separated from the graphite ring, reducing the wafer positioning error caused by human factors, thereby ensuring the accuracy and efficiency of wafer processing, and improving the automation level of wafer processing and product quality.

[0005] In order to solve the above technical problems, the present invention adopts the following technical solutions:

[0006] A SiC epitaxial splitting detection method comprises the following steps:

[0007] S01, a merging and splitting module and a robot are provided, and the robot is used to take out the merged wafer, graphite ring and graphite disk from the epitaxial growth environment and put them into the merging and splitting module;

[0008] S02, a deviation correction platform is provided, the deviation correction platform is provided with a third positioning reference, a merging and splitting module is used to separate the graphite disk and the graphite ring, and a manipulator is used to put the graphite disk into the deviation correction platform for edge finding and deviation correction, so that the graphite disk determines its own position and angle according to the third positioning reference;

[0009] S03, a laser sensor is provided, and a merging and splitting module is used to find the edge and correct the deviation of the graphite ring, and the wafer is moved away from the graphite ring, and a laser sensor is used to detect whether the wafer is separated from the graphite ring;

[0010] S04. In step S03, the merging and splitting module is provided with a second positioning reference, and the merging and splitting module performs edge finding and deviation correction on the graphite ring according to the second positioning reference, so that the graphite ring determines its own position and angle according to the second positioning reference;

[0011] S05, using a manipulator to place the graphite disk into a merging and splitting module, and using the merging and splitting module to merge the graphite disk and the graphite ring, so that the center position and angle information of the graphite disk and the graphite ring are consistent;

[0012] S06. A cleaning mechanism and a disk-ring placement box are provided, and a robot is used to place the combined graphite disk and graphite ring into the cleaning mechanism for cleaning and dust removal. A robot is used to take the combined graphite disk and graphite ring after cleaning and dust removal from the cleaning mechanism, and the combined graphite disk and graphite ring are placed in the disk-ring placement box.

[0013] The merging and splitting module includes a base frame, a plurality of ring brackets connected to the top of the base frame, a tray and a lifting mechanism, wherein the ring brackets are distributed around the base frame, the lifting mechanism is connected to the tray by driving, the base frame is penetrated by movable openings at the top and bottom, the output end of the lifting mechanism is penetrated by the movable opening, and the lifting mechanism drives the tray to move up and down, so that the tray moves up and down inside the ring bracket;

[0014] In step S01, when the robot takes out the combined wafer, graphite ring and graphite disk from the epitaxial growth environment, the lifting mechanism drives the tray to move upward to the required height, and the robot places the combined wafer, graphite ring and graphite disk on the tray so that the ring bracket and the tray support the graphite ring and the graphite disk respectively.

[0015] The deflection correction platform includes a deflection correction table, a deflection correction driving mechanism connected to the deflection correction table, a deflection correction annular light source and a deflection correction collector. The deflection correction driving mechanism is used to drive the deflection correction table to move along the X-axis and the Y-axis and to make the deflection correction table rotate. The deflection correction annular light source is located between the deflection correction table and the deflection correction collector. The deflection correction collector corresponds to the deflection correction annular light source. The third positioning reference is set on the deflection correction collector. The deflection correction collector is electrically connected to the deflection correction driving mechanism.

[0016] When the graphite disk is finding its edge, the robot grabs the graphite disk and places it on the deflection correction table, which supports the graphite disk. The deflection correction ring light source provides supplementary light for the graphite disk. The deflection correction collector takes visual photos to determine the position and angle of the graphite disk. The deflection correction drive mechanism drives the deflection correction table to move along the X-axis and / or Y-axis according to the data obtained by the deflection correction collector, and makes the deflection correction table rotate, so that the graphite disk determines its own position and angle according to the third positioning reference, thereby completing the precise positioning of the graphite disk.

[0017] Wherein, in step S04, the merging and splitting module further includes a detaching and splitting driving mechanism, a detaching and splitting ring light source, a surface light source and a collection device, the detaching and splitting driving mechanism is used to drive the base frame to move along the X-axis and the Y-axis and make the base frame rotate, the detaching and splitting ring light source is located between the base frame and the surface light source, the front end of the collection device passes through the surface light source and corresponds to the detaching and splitting ring light source, the collection device is electrically connected to the detaching and splitting driving mechanism, and the second positioning reference is set on the collection device;

[0018] When the graphite ring is edge-finding and deflection-correcting, the graphite ring is supported by a ring bracket, and the surface light source and the detachable annular light source are used to supplement the light for the graphite ring and the acquisition device. The acquisition device visually photographs to determine the position and angle of the graphite ring. The detachable driving mechanism drives the base frame to move along the X-axis and / or Y-axis according to the data obtained by the acquisition device, and causes the base frame to rotate, so that the graphite ring determines its own position and angle according to the second positioning reference, thereby completing the precise positioning of the graphite ring.

[0019] Wherein, in step S03, a storage box and an edge finder are provided, and the edge finder is provided with a first positioning reference, so that the wafer determines its own position and angle according to the first positioning reference;

[0020] When it is necessary to store the wafer, the graphite ring is edge-finding and deflected so that the graphite ring determines its own position and angle according to the second positioning reference. The lifting mechanism drives the tray to move upward so that the tray supports and drives the wafer to move away from the ring bracket. A laser sensor is used to detect the distance from the wafer and the graphite ring respectively to determine whether the wafer is successfully separated from the graphite ring. When the wafer has not separated from the graphite ring, the robot grabs the wafer and the graphite ring and moves them out of the merging and splitting module. When the wafer is determined to be separated from the graphite ring, the robot puts the wafer into the edge finder for edge finding so that the wafer determines its own position and angle according to the first positioning reference. Then the robot puts the wafer after edge finding into the storage box.

[0021] Among them, the deflection correction driving mechanism includes a deflection correction X-axis module, a deflection correction Y-axis module drivingly connected to the deflection correction X-axis module, and a deflection correction rotation unit drivingly connected to the deflection correction Y-axis module, the deflection correction X-axis module drives the deflection correction Y-axis module to move along the X-axis, the deflection correction Y-axis module drives the deflection correction rotation unit to move along the Y-axis, the deflection correction rotation unit is drivingly connected to the deflection correction table, and the deflection correction rotation unit is used to drive the deflection correction table to rotate.

[0022] Among them, the disassembling and assembling driving mechanism includes a disassembling and assembling X-axis module, a disassembling and assembling Y-axis module drivingly connected to the disassembling and assembling X-axis module, and a disassembling and assembling rotating unit drivingly connected to the disassembling and assembling Y-axis module. The disassembling and assembling X-axis module drives the disassembling and assembling Y-axis module to move along the X-axis, and the disassembling and assembling Y-axis module drives the disassembling and assembling rotating unit to move along the Y-axis. The disassembling and assembling rotating unit is drivingly connected to the base frame, and the disassembling and assembling rotating unit is used to drive the base frame to rotate. The disassembling and assembling rotating unit is installed with a protective cover, and the protective cover is penetrated with mounting openings above and below, and the lifting mechanism is penetrated through the mounting openings.

[0023] Wherein, the ring bracket is provided with a ring supporting opening, and when the ring bracket supports the graphite ring, the bottom outer edge of the graphite ring extends into the ring supporting opening.

[0024] Among them, the bottom end of the graphite ring is provided with an annular disk accommodating groove, and when the graphite disk and the graphite ring are combined, the top outer edge of the graphite disk extends into the disk accommodating groove, and the top end of the graphite ring is provided with an annular sheet accommodating groove, and when the wafer and the graphite ring are combined, the bottom outer edge of the wafer extends into the sheet accommodating groove.

[0025] The present invention also provides a SiC epitaxial splitting detection system, including a laser sensor, a collection device and a deviation correction collector;

[0026] The laser sensor is used to detect whether the wafer is separated from the graphite ring;

[0027] The deviation correction collector is used to visually take pictures to determine the position and angle of the graphite disk, and the position and angle of the graphite disk are determined by the third positioning reference;

[0028] The acquisition device is used to visually take pictures to determine the position and angle of the graphite ring, and to determine the position and angle of the graphite ring based on a second positioning reference.

[0029] Beneficial effects of the present invention:

[0030] The present invention smoothly takes out the merged wafer, graphite ring and graphite disk from the epitaxial growth environment, and independently completes the edge finding and deviation correction of the graphite disk and the graphite ring through the deviation correction platform and the merging and splitting module, thereby saving a lot of reference calibration time between the manipulator, the edge finder, the deviation correction platform and the merging and splitting module, reducing the calculation complexity of the equipment, and effectively improving the wafer positioning efficiency; then the graphite disk and the graphite ring are merged, cleaned and stored, which is conducive to their normal use in subsequent processing; through the set laser sensor, it is automatically detected whether the wafer is successfully separated from the graphite ring, reducing the wafer positioning error caused by human factors, so as to ensure the accuracy and efficiency of wafer processing, and improve the automation level of wafer processing and product quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A three-dimensional diagram of the structure in the SiC epitaxial splitting detection method and system.

[0032] Figure 2 This is a schematic diagram of the structure when the graphite ring and graphite disk are combined.

[0033] Figure 3 Schematic diagram of the exploded structure with wafer, graphite ring and graphite disk.

[0034] Figure 4 It is a three-dimensional diagram showing the graphite ring, graphite disk and the combined split module separated.

[0035] Figure 5 Schematic diagram of the positional relationship between the tray, graphite ring and ring bracket before the wafer and graphite ring are separated.

[0036] Figure 6 Schematic diagram of the exploded structure of the laser sensor, chassis, ring bracket and tray.

[0037] Figure 7 It is a schematic diagram of the three-dimensional structure of the cleaning mechanism and the robot.

[0038] Figure 8 Schematic diagram of the three-dimensional structure of the correction platform Figure 1 .

[0039] Fig. 9 It is a schematic diagram of the three-dimensional structure of the merged and split modules.

[0040] Fig.10 It is a schematic diagram of the exploded structure of the deviation correction drive mechanism, the deviation correction platform and the graphite disk.

[0041] Fig.11 It is an exploded view of the detachable drive mechanism, lifting mechanism, base frame and pallet.

[0042] Fig.12 It is a structural schematic diagram of the separation of the graphite ring and the ring bracket.

[0043] Fig.13 Schematic diagram of the local structure when the graphite ring is separated from the graphite disk.

[0044] Fig.14 This is a three-dimensional image of the wafer and graphite ring when separated.

[0045] 01. Wafer; 02. Graphite ring;

[0046] 021, disc receiving groove; 022, sheet receiving groove; 03, graphite disc;

[0047] 1. Merge and split modules; 100. Laser sensor;

[0048] 11. bottom frame; 111. movable opening; 12. ring bracket; 121. supporting ring opening;

[0049] 13. Pallet; 14. Lifting mechanism; 15. Disassembly and assembly drive mechanism;

[0050] 151. Disassemble the X-axis module; 152. Disassemble the Y-axis module; 153. Disassemble the rotation unit;

[0051] 1531, protective cover; 1532, mounting opening;

[0052] 16. Disassemble and assemble the ring light source; 17. Surface light source; 18. Collection equipment;

[0053] 2. Storage box; 3. Manipulator; 4. Edge finder;

[0054] 5. Cleaning mechanism; 6. Disk ring placement box;

[0055] 7. Correction platform;

[0056] 71. Deviation correction platform; 72. Deviation correction driving mechanism;

[0057] 721. Deflection correction X-axis module; 722. Deflection correction Y-axis module; 723. Deflection correction rotation unit; 73. Deflection correction ring light source; 74. Deflection correction collector. DETAILED DESCRIPTION

[0058] To facilitate understanding by those skilled in the art, the present invention is further described below in conjunction with examples and drawings. Specific implementation methods of the present invention will be described below. It should be pointed out that in the specific description of these implementation methods, in order to provide a concise description, this specification cannot provide a detailed description of all features of the actual implementation methods.

[0059] refer to Figures 1 to 14 As shown, a SiC epitaxial splitting detection method comprises the following steps:

[0060] S01, a merging and splitting module 1 and a robot 3 are provided, and the robot 3 is used to take out the merged wafer 01, graphite ring 02 and graphite disk 03 from the epitaxial growth environment and put them into the merging and splitting module 1;

[0061] S02, a correction platform 7 is provided, the correction platform 7 is provided with a third positioning reference, the graphite disk 03 is separated from the graphite ring 02 by a merging and splitting module 1, and the graphite disk 03 is placed on the correction platform by a manipulator 3 for edge finding and correction, so that the graphite disk 03 determines its own position and angle according to the third positioning reference;

[0062] S03, a laser sensor 100 is provided, and the merging and splitting module 1 is used to find the edge and correct the deviation of the graphite ring 02, and the wafer 01 is moved away from the graphite ring 02, and the laser sensor 100 is used to detect whether the wafer 01 is separated from the graphite ring 02;

[0063] S04. In step S03, the merging and splitting module 1 is provided with a second positioning reference, and the merging and splitting module 1 performs edge finding and deviation correction on the graphite ring 02 according to the second positioning reference, so that the graphite ring 02 determines its own position and angle according to the second positioning reference;

[0064] S05, using the manipulator 3 to place the graphite disk 03 into the merging and splitting module 1, and using the merging and splitting module 1 to merge the graphite disk 03 and the graphite ring 02, so that the center position and angle information of the graphite disk 03 and the graphite ring 02 are consistent;

[0065] S06. A cleaning mechanism 5 and a disk-ring placement box 6 are provided. A robot 3 is used to place the combined graphite disk 03 and graphite ring 02 into the cleaning mechanism 5 for cleaning and dust removal. The robot 3 is used to take away the combined graphite disk 03 and graphite ring 02 after cleaning and dust removal from the cleaning mechanism 5, and place the combined graphite disk 03 and graphite ring 02 into the disk-ring placement box 6.

[0066] refer to Figures 1 to 3 As shown, in actual application, the manipulator 3 is a four-axis robot, and the manipulator 3 is provided with a suction arm. The manipulator 3 is used to grab or place the wafer 01, the graphite ring 02 or the graphite disk 03, and the edge finder 4 is used to find the edge and correct the wafer 01 to adjust the position and angle of the wafer 01; when the wafer 01, the graphite ring 02 and the graphite disk 03 are combined, the manipulator 3 grabs or places the graphite disk 03 to realize the overall transfer of the wafer 01, the graphite ring 02 and the graphite disk 03; when the wafer 01 and the graphite ring 02 are combined, the manipulator 3 grabs or places the graphite ring 02 to realize the overall transfer of the wafer 01 and the graphite ring 02; when the graphite ring 02 and the graphite disk 03 are combined, the manipulator 3 grabs or places the graphite disk 03 to realize the overall transfer of the graphite ring 02 and the graphite disk 03, and automatically grabs or places the wafer 01, the graphite ring 02 or the graphite disk 03, saving labor and improving processing efficiency.

[0067] The present application successfully removes the merged wafer 01, graphite ring 02 and graphite disk 03 from the epitaxial growth environment. Specifically, the third positioning reference has been determined during the debugging process of the correction platform 7. After the correction platform 7 completes the edge finding and correction of the graphite disk 03, the edge finding and correction of the graphite disk 03 is ended, and the correction platform 7 does not pass the position and angle information of the graphite disk 03 to the edge finder 4, the merging and splitting module 7 or the manipulator 3. The manipulator 3 uses a fixed grasping or placing action to complete the transfer of the graphite disk 03; the second positioning reference has been determined during the debugging process of the merging and splitting module 1. After the merging and splitting module 1 completes the edge finding and correction of the graphite ring 02, the edge finding of the graphite ring 02 is ended, and the merging and splitting module 1 does not pass the position and angle information of the graphite ring 02 to the edge finder 4, the correction platform 7 or The robot 3 can complete the transfer of the graphite ring 02 by a fixed grasping or placing action, so that the correction platform 7 and the merging and splitting module 1 can independently complete the edge finding and correction of the graphite disk 03 and the graphite ring 02, saving a lot of reference calibration time between the robot 3, the edge finder 4, the correction platform 7 and the merging and splitting module 1, reducing the calculation complexity of the equipment, and effectively improving the positioning efficiency of the wafer 01; then the graphite disk 03 and the graphite ring 02 are merged, cleaned and stored, which is conducive to normal use in subsequent processing; through the set laser sensor 100, it is automatically detected whether the wafer 01 is successfully separated from the graphite ring 02, reducing the positioning error of the wafer 01 caused by human factors, so as to ensure the accuracy and efficiency of the wafer 01 processing, and improve the automation level and product quality of the wafer 01 processing.

[0068] refer to Figure 4 As shown, in this embodiment, the merging and splitting module 1 includes a base frame 11, a plurality of ring brackets 12 connected to the top of the base frame 11, a tray 13 and a lifting mechanism 14, the ring brackets 12 are distributed around the base frame 11, the lifting mechanism 14 is drivingly connected to the tray 13, the base frame 11 is penetrated by a movable opening 111 from top to bottom, the output end of the lifting mechanism 14 is penetrated by the movable opening 111, and the lifting mechanism 14 drives the tray 13 to move up and down, so that the tray 13 moves up and down inside the ring bracket 12; in step S01, when the robot 3 moves the merged wafer 0 1. The graphite ring 02 and the graphite disk 03 are taken out from the epitaxial growth environment, and the lifting mechanism 14 drives the tray 13 to move upward to the required height. The manipulator 3 places the combined wafer 01, graphite ring 02 and graphite disk 03 on the tray 13, so that the ring bracket 12 and the tray 13 respectively support the graphite ring 02 and the graphite disk 03, thereby smoothly taking out the combined wafer 01, graphite ring 02 and graphite disk 03. The lifting mechanism 14 drives the tray 13 to drive the graphite disk 03 to move, which is convenient for quickly realizing the separation of the graphite ring 02 and the graphite disk 03 and improving the separation efficiency.

[0069] refer to Figure 8 , 10As shown, in this embodiment, the deflection correction platform 7 includes a deflection correction table 71, a deflection correction driving mechanism 72 driven and connected to the deflection correction table 71, a deflection correction ring light source 73 and a deflection correction collector 74. The deflection correction driving mechanism 72 is used to drive the deflection correction table 71 to move along the X-axis and the Y-axis, and to make the deflection correction table 71 rotate. The deflection correction ring light source 73 is located between the deflection correction table 71 and the deflection correction collector 74. The deflection correction collector 74 corresponds to the deflection correction ring light source 73. The third positioning reference is set on the deflection correction collector 74. The deflection correction collector 74 is electrically connected to the deflection correction driving mechanism 72.

[0070] refer to Figure 8 As shown, in actual application, when the graphite disk 03 is edge-finding, the manipulator 3 grabs the graphite disk 03 and places it on the deflection correction platform 71, and the graphite disk 03 is supported by the deflection correction platform 71. The deflection correction ring light source 73 supplements the graphite disk 03 with light, and the deflection correction collector 74 visually takes pictures to determine the position and angle of the graphite disk 03. Fig.10 As shown, the deflection correction driving mechanism 72 drives the deflection correction platform 71 to move along the X-axis and / or Y-axis according to the data obtained by the deflection correction collector 74, and makes the deflection correction platform 71 rotate, so that the graphite disk 03 determines its own position and angle according to the third positioning reference, thereby completing the precise positioning of the graphite disk 03; specifically, the third positioning reference has been determined during the debugging process of the deflection correction platform 7. Therefore, after the deflection correction platform 7 completes the edge-finding and deflection correction of the graphite disk 03, the edge-finding and deflection correction of the graphite disk 03 is completed, and the deflection correction platform 7 does not transmit the position and angle information of the graphite disk 03 to the edge finder 4, the merging and splitting module 7 or the manipulator 3. The deflection correction platform 7 can independently complete the edge-finding and deflection correction of the graphite disk 03, and the manipulator 3 can complete the transfer of the graphite disk 03 by using a fixed grasping or placing action, saving a lot of reference calibration time between the manipulator 3, the edge finder 4, the deflection correction platform 7 and the merging and splitting module 1, reducing the equipment calculation complexity, and effectively improving the positioning efficiency of the wafer 01.

[0071] refer to Fig. 9 As shown, in this embodiment, in step S04, the merging and splitting module 1 also includes a merging and splitting driving mechanism 15, a merging and splitting ring light source 16, a surface light source 17 and a collection device 18, the merging and splitting driving mechanism 15 is used to drive the base frame 11 to move along the X-axis and the Y-axis, and to make the base frame 11 rotate, the merging and splitting ring light source 16 is located between the base frame 11 and the surface light source 17, the front end of the collection device 18 passes through the surface light source 17 and corresponds to the merging and splitting ring light source 16, the collection device 18 is electrically connected to the merging and splitting driving mechanism 15, and the second positioning reference is set on the collection device 18.

[0072] refer to Fig. 9As shown, in actual application, when the graphite ring 02 is edge-finding and deflection-correcting, the graphite ring 02 is supported by the ring bracket 12, the surface light source 17 and the detachable annular light source 16 are used to supplement the light for the graphite ring 02 and the acquisition device 18, and the acquisition device 18 visually photographs to determine the position and angle of the graphite ring 02, and the detachable driving mechanism 15 drives the base frame 11 to move along the X-axis and / or the Y-axis according to the data obtained by the acquisition device 18, and makes the base frame 11 rotate, so that the graphite ring 02 determines its own position and angle according to the second positioning reference, thereby completing the precise positioning of the graphite ring 02; specifically, the second positioning reference is in the merging and splitting module 1 has been determined during the debugging process, therefore, after the merging and splitting module 1 completes the edge finding and deflection correction of the graphite ring 02, the edge finding of the graphite ring 02 is ended, and the merging and splitting module 1 does not transmit the position and angle information of the graphite ring 02 to the edge finder 4, the deflection correction platform 7 or the manipulator 3. The merging and splitting module 1 can independently complete the edge finding and deflection correction of the graphite ring 02, and the manipulator 3 can complete the transfer of the graphite ring 02 by using a fixed grasping or placing action, saving a lot of reference calibration time between the manipulator 3, the edge finder 4, the deflection correction platform 7 and the merging and splitting module 1, reducing the calculation complexity of the equipment, and effectively improving the positioning efficiency of the wafer 01.

[0073] refer to Figure 1 As shown, in this embodiment, in step S03, a storage box 2 and an edge finder 4 are provided, and the edge finder 4 is provided with a first positioning reference, so that the wafer 01 determines its own position and angle according to the first positioning reference. Specifically, the first positioning reference has been determined during the debugging process of the edge finder 4. After the edge finder 4 completes the edge finding and deflection correction of the wafer 01, the edge finding and deflection correction of the wafer 01 is ended. The edge finder 4 does not pass the position and angle information of the wafer 01 to the merging and splitting module 1, the deflection correction platform 7 or the manipulator 3. The edge finder 4 can independently complete the edge finding and deflection correction of the wafer 01, and the manipulator 3 can complete the transfer of the wafer 01 by a fixed grasping or placing action, thereby saving a lot of reference calibration time between the manipulator 3, the edge finder 4, the deflection correction platform 7 and the merging and splitting module 1, reducing the equipment calculation complexity, and effectively improving the positioning efficiency of the wafer 01.

[0074] refer to Figure 6As shown, when the wafer 01 needs to be stored, the graphite ring 02 is edge-finding and deflection-corrected, so that the graphite ring 02 determines its own position and angle according to the second positioning reference, and the lifting mechanism 14 drives the tray 13 to move upward, so that the tray 13 supports and drives the wafer 01 to move away from the ring bracket 12, and the laser sensor 100 is used to detect the distance from the wafer 01 and the graphite ring 02 respectively, so as to determine whether the wafer 01 is successfully separated from the graphite ring 02. When the wafer 01 is not separated from the graphite ring 0 2. The robot 3 grabs the wafer 01 and the graphite ring 02 and moves them out of the merging and splitting module. When the wafer 01 is determined to be separated from the graphite ring 02, the robot 3 puts the wafer 01 into the edge finder 4 for edge finding, so that the wafer 01 determines its own position and angle according to the first positioning reference. Then the robot 3 puts the wafer 01 after edge finding into the storage box 2, and automatically detects whether the wafer 01 is successfully separated from the graphite ring 02, thereby reducing the positioning error caused by human factors and facilitating the rapid edge finding and storage of the wafer 01.

[0075] refer to Fig.10 As shown, in this embodiment, the deflection correction driving mechanism 72 includes a deflection correction X-axis module 721, a deflection correction Y-axis module 722 drivingly connected to the deflection correction X-axis module 721, and a deflection correction rotation unit 723 drivingly connected to the deflection correction Y-axis module 722, the deflection correction X-axis module 721 drives the deflection correction Y-axis module 722 to move along the X-axis, the deflection correction X-axis module 721 and the deflection correction Y-axis module 722 are linear motors, cylinders or electric cylinders, the deflection correction rotation unit 723 is a servo motor or a drive motor, the deflection correction Y-axis module 722 drives the deflection correction rotation unit 723 to move along the Y-axis, the deflection correction rotation unit 723 is drivingly connected to the deflection correction table 71, and the deflection correction rotation unit 723 is used to drive the deflection correction table 71 to rotate, thereby smoothly meeting the horizontal movement and horizontal rotation requirements of the graphite disk 03, and facilitating accurate adjustment of the position and angle of the graphite disk 03.

[0076] refer to Fig.11As shown, in this embodiment, the disassembly and assembly driving mechanism 15 includes a disassembly and assembly X-axis module 151, a disassembly and assembly Y-axis module 152 drivingly connected to the disassembly and assembly Y-axis module 151, and a disassembly and assembly rotation unit 153 drivingly connected to the disassembly and assembly Y-axis module 152. The disassembly and assembly X-axis module 151 drives the disassembly and assembly Y-axis module 152 to move along the X-axis, and the disassembly and assembly Y-axis module 152 drives the disassembly and assembly rotation unit 153 to move along the Y-axis. The disassembly and assembly rotation unit 153 is drivingly connected to the base frame 11. The disassembly and assembly X-axis module 151 and the disassembly and assembly Y-axis module 152 are linear motors, oil cylinders or electric cylinders. The disassembling and rotating unit 153 is a servo motor or a driving motor, and the disassembling and rotating unit 153 is used to drive the base frame 11 to rotate, so as to smoothly meet the horizontal movement and horizontal rotation requirements of the graphite ring 02, and is conducive to accurately adjusting the position and angle of the graphite ring 02; the disassembling and rotating unit 153 is installed with a shield 1531, and the shield 1531 is penetrated by an installation opening 1532 from top to bottom, and the lifting mechanism 14 is penetrated by the installation opening 1532, so that part of the structure of the lifting mechanism 14 can be hidden in the disassembling and rotating unit 153, the structure is compact and the layout is ingenious, and the space occupation is effectively saved.

[0077] refer to Fig.12 As shown, in this embodiment, the ring bracket 12 is provided with a ring supporting opening 121. When the ring bracket 12 supports the graphite ring 02, the bottom outer edge of the graphite ring 02 extends into the ring supporting opening 121. The graphite ring 02 is supported by the ring supporting opening 121, which facilitates the positioning of the graphite ring 02 and improves the positioning accuracy of the graphite ring 02.

[0078] refer to Fig.13 As shown, in this embodiment, the bottom end of the graphite ring 02 is provided with an annular disk accommodating groove 021. When the graphite disk 03 is combined with the graphite ring 02, the top outer edge of the graphite disk 03 extends into the disk accommodating groove 021, and part of the graphite disk 03 is hidden in the graphite ring 02. The structure is compact, space is saved, and the graphite disk 03 is accurately positioned on the graphite ring 02. Fig.14 As shown, the top of the graphite ring 02 is provided with an annular sheet accommodating groove 022. When the wafer 01 and the graphite ring 02 are combined, the bottom outer edge of the wafer 01 extends into the sheet accommodating groove 022, so that part of the wafer 01 is hidden in the graphite ring 02. The structure is compact, space is saved, and it is beneficial for the wafer 01 to be accurately positioned in the graphite ring 02.

[0079] refer to Figure 6 , 8 As shown in , 9, the present invention also provides a SiC epitaxial splitting detection system, including a laser sensor 100, a collection device 18 and a correction collector 74;

[0080] The laser sensor 100 is used to detect whether the wafer 01 is separated from the graphite ring 02. By setting the laser sensor 100, it is automatically detected whether the wafer 01 is successfully separated from the graphite ring 02, reducing the positioning error of the wafer 01 caused by human factors, so as to ensure the accuracy and efficiency of the wafer 01 processing, and improve the automation level and product quality of the wafer 01 processing;

[0081] The deflection correction collector 74 is used to visually take pictures to determine the position and angle of the graphite disk 03, and the position and angle of the graphite disk 03 are determined by the third positioning reference. The graphite disk 03 can calibrate its own position and angle according to the third positioning reference, which is convenient for the deflection correction platform 7 to independently complete the edge finding and deflection correction of the graphite disk 03, saving a lot of reference calibration time between the manipulator 3, the edge finder 4, the deflection correction platform 7 and the merging and splitting module 1, reducing the calculation complexity of the equipment, and effectively improving the positioning efficiency of the wafer 01;

[0082] The acquisition device 18 is used for visual photography to determine the position and angle of the graphite ring 02, and the position and angle of the graphite ring 02 are determined by the second positioning reference. The graphite ring 02 can calibrate its own position and angle according to the second positioning reference, so that the merging and splitting module 1 can independently complete the edge finding and deviation correction of the graphite ring 02, saving a lot of reference calibration time between the robot 3, the edge finder 4, the deviation correction platform 7 and the merging and splitting module 1, reducing the calculation complexity of the equipment, and effectively improving the positioning efficiency of the wafer 01.

[0083] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. Although the present invention is disclosed as a preferred embodiment as above, it is not used to limit the present invention. Any technician familiar with the profession can make some changes or modifications to equivalent embodiments of equivalent changes by using the technical contents disclosed above without departing from the scope of the technical solution of the present invention. However, any simple modification, equivalent changes and modifications made to the above embodiments according to the technology of the present invention are within the scope of the technical solution of the present invention without departing from the content of the technical solution of the present invention.

Claims

1. A SiC epitaxial splitting detection method, characterized in that: The following steps are involved: S01, a merging and splitting module (1) and a robot (3) are provided, and the robot (3) is used to take out the merged wafer (01), the graphite ring (02) and the graphite disk (03) from the epitaxial growth environment and put them into the merging and splitting module (1); S02, a deviation correction platform (7) is provided, the deviation correction platform (7) is provided with a third positioning reference, a merging and splitting module (1) is used to separate the graphite disk (03) from the graphite ring (02), and a manipulator (3) is used to place the graphite disk (03) on the deviation correction platform for edge finding and deviation correction, so that the graphite disk (03) determines its own position and angle according to the third positioning reference; S03, a laser sensor (100) is provided, and a merging and splitting module (1) is used to find the edge and correct the deviation of the graphite ring (02), and the wafer (01) is moved in a direction away from the graphite ring (02), and the laser sensor (100) is used to detect whether the wafer (01) is separated from the graphite ring (02); S04. In step S03, the merging and splitting module (1) is provided with a second positioning reference, and the merging and splitting module (1) performs edge finding and deviation correction on the graphite ring (02) according to the second positioning reference, so that the graphite ring (02) determines its own position and angle according to the second positioning reference; S05, using a manipulator (3) to place the graphite disk (03) into the merging and splitting module (1), and using the merging and splitting module (1) to merge the graphite disk (03) and the graphite ring (02), so that the center position and angle information of the graphite disk (03) and the graphite ring (02) are consistent; S06. A cleaning mechanism (5) and a disk-ring placement box (6) are provided. A robot (3) is used to place the combined graphite disk (03) and graphite ring (02) into the cleaning mechanism (5) for cleaning and dust removal. The robot (3) is used to take the combined graphite disk (03) and graphite ring (02) after cleaning and dust removal from the cleaning mechanism (5), and the combined graphite disk (03) and graphite ring (02) are placed into the disk-ring placement box (6).

2. The SiC epitaxial splitting detection method according to claim 1, characterized in that: The merging and splitting module (1) comprises a base frame (11), a plurality of ring brackets (12) connected to the top of the base frame (11), a tray (13) and a lifting mechanism (14); the ring brackets (12) are distributed around the base frame (11); the lifting mechanism (14) is drivingly connected to the tray (13); a movable opening (111) is passed through the base frame (11) from top to bottom; an output end of the lifting mechanism (14) is passed through the movable opening (111); the lifting mechanism (14) drives the tray (13) to move up and down, so that the tray (13) moves up and down inside the ring bracket (12); In step S01, when the robot (3) takes out the combined wafer (01), graphite ring (02) and graphite disk (03) from the epitaxial growth environment, the lifting mechanism (14) drives the tray (13) to move upward to a required height, and the robot (3) places the combined wafer (01), graphite ring (02) and graphite disk (03) on the tray (13), so that the ring bracket (12) and the tray (13) respectively support the graphite ring (02) and the graphite disk (03).

3. The SiC epitaxial splitting detection method according to claim 1, characterized in that: The deflection correction platform (7) comprises a deflection correction platform (71), a deflection correction driving mechanism (72) drivingly connected to the deflection correction platform (71), a deflection correction annular light source (73) and a deflection correction collector (74); the deflection correction driving mechanism (72) is used to drive the deflection correction platform (71) to move along the X-axis and the Y-axis and to make the deflection correction platform (71) rotate; the deflection correction annular light source (73) is located between the deflection correction platform (71) and the deflection correction collector (74); the deflection correction collector (74) corresponds to the deflection correction annular light source (73); the third positioning reference is arranged on the deflection correction collector (74); and the deflection correction collector (74) is electrically connected to the deflection correction driving mechanism (72); When the graphite disk (03) is edge finding, the robot (3) grabs the graphite disk (03) and places it on the deflection correction table (71), and the graphite disk (03) is supported by the deflection correction table (71). The deflection correction ring light source (73) supplements the graphite disk (03). The deflection correction collector (74) visually photographs to determine the position and angle of the graphite disk (03). The deflection correction drive mechanism (72) drives the deflection correction table (71) to move along the X-axis and / or the Y-axis according to the data obtained by the deflection correction collector (74), and causes the deflection correction table (71) to rotate, so that the graphite disk (03) determines its own position and angle according to the third positioning reference, thereby completing the precise positioning of the graphite disk (03).

4. The SiC epitaxial splitting detection method according to claim 2, characterized in that: In step S04, the merging and splitting module (1) further comprises a detaching and splitting driving mechanism (15), a detaching and splitting annular light source (16), a surface light source (17) and a collection device (18); the detaching and splitting driving mechanism (15) is used to drive the base frame (11) to move along the X-axis and the Y-axis and to make the base frame (11) rotate; the detaching and splitting annular light source (16) is located between the base frame (11) and the surface light source (17); the front end of the collection device (18) passes through the surface light source (17) and corresponds to the detaching and splitting annular light source (16); the collection device (18) is electrically connected to the detaching and splitting driving mechanism (15); and the second positioning reference is arranged on the collection device (18); When the graphite ring (02) is edge-finding and deflection-correcting, the graphite ring (02) is supported by the ring bracket (12), the surface light source (17) and the detachable annular light source (16) provide supplementary light for the graphite ring (02) and the collection device (18), the collection device (18) visually photographs to determine the position and angle of the graphite ring (02), and the detachable driving mechanism (15) drives the base frame (11) to move along the X-axis and / or the Y-axis according to the data obtained by the collection device (18), and causes the base frame (11) to rotate, so that the graphite ring (02) determines its own position and angle according to the second positioning reference, thereby completing the precise positioning of the graphite ring (02).

5. The SiC epitaxial splitting detection method according to claim 4, characterized in that: In step S03, a storage box (2) and an edge finder (4) are provided, and the edge finder (4) is provided with a first positioning reference, so that the wafer (01) determines its own position and angle according to the first positioning reference; When the wafer (01) needs to be stored, the graphite ring (02) is edge-finding and deflection-corrected so that the graphite ring (02) determines its own position and angle according to the second positioning reference. The lifting mechanism (14) drives the tray (13) to move upward so that the tray (13) supports and drives the wafer (01) to move in a direction away from the ring bracket (12). The laser sensor (100) is used to detect the distances from the wafer (01) and the graphite ring (02) respectively to determine whether the wafer (01) is successfully released. When the wafer (01) is separated from the graphite ring (02), the robot (3) grabs the wafer (01) and the graphite ring (02) to move them out of the merging and splitting module. When the wafer (01) is determined to be separated from the graphite ring (02), the robot (3) puts the wafer (01) into the edge finder (4) for edge finding, so that the wafer (01) determines its own position and angle according to the first positioning reference, and then the robot (3) puts the wafer (01) after edge finding into the storage box (2).

6. The SiC epitaxial splitting detection method according to claim 3, characterized in that: The deflection correction driving mechanism (72) comprises a deflection correction X-axis module (721), a deflection correction Y-axis module (722) drivingly connected to the deflection correction X-axis module (721), and a deflection correction rotation unit (723) drivingly connected to the deflection correction Y-axis module (722); the deflection correction X-axis module (721) drives the deflection correction Y-axis module (722) to move along the X-axis; the deflection correction Y-axis module (722) drives the deflection correction rotation unit (723) to move along the Y-axis; the deflection correction rotation unit (723) is drivingly connected to the deflection correction platform (71); and the deflection correction rotation unit (723) is used to drive the deflection correction platform (71) to rotate.

7. The SiC epitaxial splitting detection method according to claim 4, characterized in that: The disassembly and assembly driving mechanism (15) comprises a disassembly and assembly X-axis module (151), a disassembly and assembly Y-axis module (152) drivingly connected to the disassembly and assembly X-axis module (151), and a disassembly and assembly rotating unit (153) drivingly connected to the disassembly and assembly Y-axis module (152); the disassembly and assembly X-axis module (151) drives the disassembly and assembly Y-axis module (152) to move along the X-axis; the disassembly and assembly Y-axis module (152) drives the disassembly and assembly rotating unit (153) to move along the Y-axis; the disassembly and assembly rotating unit (153) is drivingly connected to the base frame (11); the disassembly and assembly rotating unit (153) is used to drive the base frame (11) to rotate; the disassembly and assembly rotating unit (153) is installed with a protective cover (1531); the protective cover (1531) is penetrated with an installation opening (1532) at the top and bottom; and the lifting mechanism (14) is penetrated through the installation opening (1532).

8. The SiC epitaxial splitting detection method according to claim 2, characterized in that: The ring bracket (12) is provided with a ring supporting opening (121), and when the ring bracket (12) supports the graphite ring (02), the bottom outer edge of the graphite ring (02) extends into the ring supporting opening (121).

9. The SiC epitaxial splitting detection method according to claim 1, characterized in that: The bottom end of the graphite ring (02) is provided with an annular disk accommodating groove (021); when the graphite disk (03) is combined with the graphite ring (02), the top outer edge of the graphite disk (03) extends into the disk accommodating groove (021); the top end of the graphite ring (02) is provided with an annular sheet accommodating groove (022); when the wafer (01) is combined with the graphite ring (02), the bottom outer edge of the wafer (01) extends into the sheet accommodating groove (022).

10. A SiC epitaxial splitting detection system, used in the SiC epitaxial splitting detection method according to any one of claims 1 to 9, characterized in that: It comprises a laser sensor (100), a collection device (18) and a deviation correction collector (74); The laser sensor (100) is used to detect whether the wafer (01) is separated from the graphite ring (02); The deviation correction collector (74) is used to visually take photos to determine the position and angle of the graphite disk (03), and to determine the position and angle of the graphite disk (03) based on a third positioning reference; The acquisition device (18) is used to visually take photos to determine the position and angle of the graphite ring (02), and to determine the position and angle of the graphite ring (02) based on a second positioning reference.

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