Bridge type LED lamp structure
By adopting a bridge structure in LED lamps, the P-type and N-type semiconductor integration solves the problems of reverse breakdown and excessive temperature, and the effect of reducing costs and resource occupation is achieved.
Patent Information
- Application Number
- CN202411763513.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-03
- Publication Date
- 2025-03-04
AI Technical Summary
Existing LED lamps are susceptible to reverse current breakdown and excessive temperature problems when used, resulting in damage. The design of solving these problems is complex, high cost and large resource occupancy.
The bridge LED lamp structure is adopted, and P-type semiconductor and N-type semiconductor are soldered on the circuit board in pairs to form a bridge structure, overlapping the LED lamp chip, and a heat dissipation plate and reflector are arranged on the circuit board to achieve integration and solve the problems of reverse breakdown and excessive temperature.
It effectively reduces time costs, labor costs, space resource occupation and energy consumption, and improves the reliability and efficiency of LED lamps.
Smart Images
Figure CN119560487A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a bridge-type LED lamp structure, belonging to the technical field of lighting devices. Background Art
[0002] In the prior art, the essence of LED lamps is light-emitting diodes. When light-emitting diodes are in use, reverse current breakdown must be strictly avoided, and the temperature rises during operation is relatively high. Most LED lamps are damaged due to reverse breakdown or excessive temperature. For this reason, they are generally handled separately. For the current problem, an external circuit is independently set to avoid reverse current. For the temperature rise problem, a cooling device is also set. This method is troublesome and requires more design work, with high time and labor costs. Secondly, the structure is complex, the volume is large, and the space resources and energy consumption are high. Summary of the invention
[0003] In order to solve the above technical problems, the present invention provides a bridge-type LED lamp structure. The bridge-type LED lamp structure is based on a P-type semiconductor, an N-type semiconductor and an LED chip to form a bridge structure, which can effectively integrate and solve the two problems of preventing reverse breakdown and avoiding excessive temperature, thereby greatly reducing time costs, labor costs, space resource occupancy and energy consumption.
[0004] The present invention is achieved through the following technical solutions.
[0005] The present invention provides a bridge-type LED lamp structure, comprising a P-type semiconductor and an N-type semiconductor; the P-type semiconductor and the N-type semiconductor are welded in pairs on a circuit board, there is a gap between each pair of the P-type semiconductor and the N-type semiconductor, and an LED lamp chip is overlapped above the gap; multiple pairs of P-type semiconductors and N-type semiconductors are distributed on the circuit board, and an on-board circuit is arranged on the circuit board to connect the multiple pairs of P-type semiconductors and N-type semiconductors to form an LED circuit.
[0006] A heat sink is provided at the bottom of the circuit board for heat dissipation.
[0007] A reflective sheet is provided below the LED lamp chip and located between the P-type semiconductor and the N-type semiconductor, and is used for reflecting the light emitted by the LED lamp chip.
[0008] The multiple pairs of P-type semiconductors and N-type semiconductors are evenly distributed in an array, each pair of P-type semiconductors and N-type semiconductors are distributed in the same direction, and the N-type semiconductors are positive phase channels.
[0009] A central chip is overlapped between the non-paired P-type semiconductors and N-type semiconductors at positions between the multiple pairs of P-type semiconductors and N-type semiconductors.
[0010] A reflective sheet is installed opposite to the bottom of the central chip to reflect the light emitted by the central chip.
[0011] The reflective sheet is an arc-shaped mirror surface that bends upward.
[0012] The P-type semiconductor is a P-type temperature difference semiconductor, and the N-type semiconductor is an N-type temperature difference semiconductor.
[0013] At least one side of the heat dissipation plate is in a comb-tooth shape, and at least one side is in a full-sheet strip shape.
[0014] The P-type semiconductor, the N-type semiconductor and the circuit board constitute an LED lamp monomer as a whole, and a plurality of LED lamp monomers are distributed and installed in an array on the substrate.
[0015] The beneficial effect of the present invention is that the way in which the P-type semiconductor, the N-type semiconductor and the LED chip form a bridge structure can effectively integrate and solve the two problems of preventing reverse breakdown and avoiding excessive temperature, thereby greatly reducing time costs, labor costs, space resource occupancy and energy consumption. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 is a schematic diagram of the structure of at least one embodiment of the present invention;
[0017] Figure 2 yes Figure 1 An installation and use method.
[0018] In the figure: 11-P-type semiconductor, 12-N-type semiconductor, 13-LED lamp chip, 14-reflective sheet, 15-central chip, 21-circuit board, 22-onboard circuit, 23-heat sink, 31-LED lamp monomer, 32-substrate. DETAILED DESCRIPTION
[0019] The technical solution of the present invention is further described below, but the scope of protection claimed is not limited to the description.
[0020] A first embodiment of the present invention relates to Figure 1 A bridge-type LED lamp structure shown in the figure includes a P-type semiconductor 11 and an N-type semiconductor 12; the P-type semiconductor 11 and the N-type semiconductor 12 are welded in pairs on a circuit board 21, there is a gap between each pair of the P-type semiconductor 11 and the N-type semiconductor 12, and an LED lamp chip 13 is overlapped above the gap; a plurality of pairs of P-type semiconductors 11 and N-type semiconductors 12 are distributed on the circuit board 21, and an on-board circuit 22 is arranged on the circuit board 21 to connect the plurality of pairs of P-type semiconductors 11 and N-type semiconductors 12 to form an LED circuit.
[0021] The second embodiment of the present invention is substantially the same as the first embodiment, mainly in that a heat sink 23 is provided at the bottom of the circuit board 21 for heat dissipation.
[0022] Furthermore, at least one side of the heat dissipation plate 23 is in a comb-tooth shape, and at least one side is in a full-plate strip shape.
[0023] Preferably, the P-type semiconductor 11 is a P-type temperature difference semiconductor, and the N-type semiconductor 12 is an N-type temperature difference semiconductor.
[0024] The third embodiment of the present invention is substantially the same as the first embodiment, mainly in that a reflective sheet 14 is provided below the LED lamp chip 13 and between the P-type semiconductor 11 and the N-type semiconductor 12 to reflect the light emitted by the LED lamp chip 13 .
[0025] Furthermore, a plurality of pairs of P-type semiconductors 11 and N-type semiconductors 12 are evenly distributed in an array, each pair of P-type semiconductors 11 and N-type semiconductors 12 are distributed in the same direction, and the N-type semiconductors 12 are normal phase channels.
[0026] Furthermore, between the multiple pairs of P-type semiconductors 11 and N-type semiconductors 12 , there is a central chip 15 bridging between the non-paired P-type semiconductors 11 and N-type semiconductors 12 .
[0027] Furthermore, a reflective sheet 14 is installed opposite to the bottom of the central chip 15 to reflect the light emitted by the central chip 15 .
[0028] Furthermore, the reflective sheet 14 is an arc-shaped mirror surface that is curved upward.
[0029] Further, such as Figure 2 As shown, the P-type semiconductor 11 , the N-type semiconductor 12 , and the circuit board 21 constitute an LED lamp monomer 31 as a whole, and a plurality of LED lamp monomers 31 are installed in an array and distributed on a substrate 32 .
[0030] Example 1
[0031] In combination with the above-mentioned implementation, each lamp bead has four pairs of PN temperature difference semiconductor chips (i.e., pairs of P-type semiconductors 11 and N-type semiconductors 12). According to the Peltier effect, after the temperature difference chip is powered on, it directly and actively cools the LED lamp chip bridged on top. The heat generated by the hot surface below the temperature difference chip is conducted out through the heat sink. There is a corresponding reflector under each LED lamp chip to reflect the light source on the back of the LED lamp chip. The rated voltage of each lamp bead module is 10.8V. The main structure is composed of 20 LED lamp beads in series. Based on the cross-circuit structure in the lamp bead, it can be directly connected to a 220V alternating power supply. Each lamp bead is directly and actively cooled by a semiconductor temperature difference chip with a bridge-type PN structure.
[0032] Therefore, in terms of electrical performance, the P-type semiconductor 11 and the N-type semiconductor 12 can better ensure the current direction of the LED chip (including the LED lamp chip 13 and the central chip 15) and more effectively avoid reverse breakdown; in terms of heat dissipation, the P-type semiconductor 11, the N-type semiconductor 12 and the LED chip form a bridge structure, and the P-type semiconductor 11 and the N-type semiconductor 12 are made of temperature difference semiconductors, which can significantly improve the heat dissipation efficiency of the LED chip during operation.
Claims
1. A bridge-type LED lamp structure, comprising a P-type semiconductor (11) and an N-type semiconductor (12), characterized in that: The P-type semiconductor (11) and the N-type semiconductor (12) are welded in pairs on a circuit board (21); there is a gap between each pair of the P-type semiconductor (11) and the N-type semiconductor (12), and an LED lamp chip (13) is overlapped above the gap; a plurality of pairs of the P-type semiconductor (11) and the N-type semiconductor (12) are distributed on the circuit board (21); and a board-mounted circuit (22) is arranged on the circuit board (21) to connect the plurality of pairs of the P-type semiconductor (11) and the N-type semiconductor (12) to form an LED circuit.
2. The bridge type LED lamp structure according to claim 1, characterized in that: A heat sink (23) is provided at the bottom of the circuit board (21) for heat dissipation.
3. The bridge type LED lamp structure according to claim 1, characterized in that: A reflective sheet (14) is provided below the LED lamp chip (13) and is located between the P-type semiconductor (11) and the N-type semiconductor (12) to reflect light emitted by the LED lamp chip (13).
4. The bridge type LED lamp structure according to claim 1, characterized in that: The multiple pairs of P-type semiconductors (11) and N-type semiconductors (12) are evenly distributed in an array, each pair of P-type semiconductors (11) and N-type semiconductors (12) are distributed in the same direction, and the N-type semiconductors (12) are positive phase channels.
5. The bridge type LED lamp structure as claimed in claim 4, characterized in that: A central chip (15) is overlapped between the non-paired P-type semiconductors (11) and N-type semiconductors (12) at positions between the multiple pairs of P-type semiconductors (11) and N-type semiconductors (12).
6. The bridge type LED lamp structure as claimed in claim 5, characterized in that: A reflective sheet (14) is installed opposite to the bottom of the central chip (15) for reflecting the light emitted by the central chip (15).
7. The bridge type LED lamp structure according to claim 3 or 6, characterized in that: The reflective sheet (14) is an arc-shaped mirror surface that bends upward.
8. The bridge type LED lamp structure according to claim 1, characterized in that: The P-type semiconductor (11) is a P-type temperature difference semiconductor, and the N-type semiconductor (12) is an N-type temperature difference semiconductor.
9. The bridge type LED lamp structure as claimed in claim 2, characterized in that: At least one side of the heat dissipation plate (23) is in a comb-tooth shape, and at least one side is in a full-plate strip shape.
10. The bridge type LED lamp structure according to claim 1, characterized in that: The P-type semiconductor (11), the N-type semiconductor (12), and the circuit board (21) constitute an LED lamp monomer (31) as a whole, and a plurality of LED lamp monomers (31) are distributed and mounted in an array on a substrate (32).