Resistive random access memory and manufacturing method thereof

Abstract

The resistive random access memory comprises a substrate and a resistive random structure located on the substrate, and the resistive random structure comprises a first electrode, a resistive random layer, an oxygen reaction layer and a second electrode which are sequentially stacked; the resistive random layer is provided with a main body part and a convex part, the convex part abuts against the first electrode, the main body part abuts against the oxygen reaction layer, and the width of the convex part is smaller than that of the main body part.

Description

Technical Field

[0001] The present invention relates to semiconductor technology, and in particular to a resistive random access memory and a manufacturing method thereof. Background Art

[0002] As a new type of non-volatile memory, resistive random access memory (RRAM) has the advantages of simple structure, fast operation speed, low power consumption and stable information retention. It is one of the strong competitors for the next generation of non-volatile memory.

[0003] Figure 1 The structure diagram of an existing resistive memory is shown in FIG. 1 , which includes a substrate 10 and a resistive structure thereon. The resistive structure includes a bottom electrode 101, a resistive layer 102, and a top electrode 103 stacked in sequence from bottom to top. The resistive layer 102 with a resistive effect converts between resistance states (high resistance state and low resistance state) under the action of an external voltage to form binary information storage of "0" state and "1" state. Many materials including metal oxides have significant resistive properties. The resistive mechanism is based on the aggregation of defects such as oxygen vacancies to form conductive filaments. Oxygen vacancies are the main defects in metal oxide resistive materials.

[0004] like Figure 1 As shown, in the stacked resistive switching structure, the conductive filaments grow randomly and have a large distribution range, resulting in poor uniformity of the device. Summary of the invention

[0005] The present disclosure provides a method to at least solve the above technical problems existing in the prior art.

[0006] On one hand, the present disclosure provides a resistive memory, comprising: a substrate and a resistive structure located on the substrate, wherein the resistive structure comprises: a first electrode, a resistive layer, an oxygen reaction layer, and a second electrode stacked in sequence;

[0007] The resistive layer has a main body and a convex part, the convex part abuts against the first electrode, the main body abuts against the oxygen reaction layer, and the width of the convex part is smaller than the width of the main body.

[0008] The first electrode is a lower electrode and abuts against the substrate, the width of the first electrode is greater than or equal to the width of the protruding portion, and the first electrode and the protruding portion overlap in a vertical direction.

[0009] The second electrode is a lower electrode and abuts against the substrate, the width of the second electrode is greater than or equal to the width of the protruding portion, and the second electrode and the protruding portion overlap in a vertical direction.

[0010] Wherein, the side surfaces of the raised portions of the resistive switching layer are wrapped with a protective layer.

[0011] The protective layer comprises a sidewall protective layer and a dielectric layer, the sidewall protective layer wraps the protruding portion, and the dielectric layer wraps the sidewall protective layer.

[0012] The layer height of the protrusion is less than or equal to the layer height of the main body, and the layer height of the main body is less than the layer height of the oxygen reaction layer.

[0013] The oxygen reaction layer is used to capture oxygen atoms in the main body of the resistive layer to form oxygen vacancies in the main body.

[0014] The oxygen reaction layer is also used to capture oxygen atoms in the protrusion under the effect of forming operation excitation, forming oxygen vacancies in the protrusion, so that the oxygen vacancies in the protrusion and the main body are connected to form conductive filaments.

[0015] Another aspect of the present disclosure provides a method for manufacturing a resistive random access memory, comprising:

[0016] forming a first electrode layer on a substrate, wherein the first electrode layer comprises a first electrode;

[0017] forming a protective layer on the first electrode layer, wherein the protective layer has a recessed portion;

[0018] Depositing a resistive switching layer material to form a resistive switching layer, so that the resistive switching layer covers the protective layer, the resistive switching layer has a main body and a convex portion, the convex portion fills the concave portion, so that the convex portion abuts against the first electrode;

[0019] An oxygen reaction layer and a second electrode are sequentially formed on the resistive layer.

[0020] In another aspect, the present disclosure provides a method for manufacturing a resistive random access memory, comprising:

[0021] forming a second electrode layer on the substrate, wherein the second electrode layer includes a second electrode;

[0022] forming an oxygen reaction layer on the second electrode layer;

[0023] forming a main body of a resistive switching layer on the oxygen reaction layer;

[0024] forming a protective layer on the main body, wherein the protective layer has a recessed portion;

[0025] Depositing a resistive switching layer material and performing a planarization process to form a raised portion of the resistive switching layer, wherein the raised portion fills the recessed portion and the raised portion abuts against the main body portion;

[0026] A first electrode material is deposited to form a first electrode, so that the first electrode covers the protection layer and the first electrode abuts against the protrusion.

[0027] In the resistive memory disclosed in the present invention, the resistive region is reduced by the raised portion of the resistive layer, so that the electric field is concentrated in the area corresponding to the raised portion. In this way, the formation position of the conductive filament can be controlled by setting the position of the raised portion, thereby improving the uniformity of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 A schematic diagram of a resistive switching structure in the prior art is shown;

[0029] Figure 2 A schematic diagram of a resistive switching structure in an example of the present disclosure is shown;

[0030] Figure 3 A schematic diagram of a resistive switching structure in another example of the present disclosure is shown;

[0031] Figure 4 The process of forming the conductive filaments in an example of the present disclosure is shown;

[0032] Figure 5 A flow chart of a method for manufacturing a resistive random access memory in an example is shown;

[0033] Figure 6 A schematic diagram of a manufacturing process of a resistive random access memory in an example of the disclosure is shown;

[0034] Figure 7 A flow chart of a method for manufacturing a resistive memory in another disclosed example is shown;

[0035] Figure 8 A schematic diagram of a manufacturing process of a resistive memory in another disclosed example is shown;

[0036] Fig. 9 A schematic diagram of a resistive switching structure in yet another disclosed example is shown. DETAILED DESCRIPTION

[0037] In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0038] The present disclosure provides a resistive memory, comprising: a substrate and a resistive structure located on the substrate, wherein the resistive structure comprises: a first electrode, a resistive layer, an oxygen reaction layer, and a second electrode stacked in sequence; wherein the resistive layer has a main body and a protruding portion, the protruding portion abuts against the first electrode, the main body abuts against the oxygen reaction layer, and the width of the protruding portion is smaller than the width of the main body.

[0039] In the resistive switching structure disclosed in the present invention, the resistive switching area is reduced by the raised portion of the resistive switching layer, so that the electric field is concentrated in the area corresponding to the raised portion. In this way, the formation position of the conductive filament can be controlled by setting the position of the raised portion, thereby improving the uniformity of the device.

[0040] like Figure 2 The resistive memory provided by an example of the present disclosure is shown, in which the first electrode is the lower electrode 101, and the second electrode is the upper electrode 103. The lower electrode 101 (first electrode) abuts against the substrate 10, the protrusion 1022 of the resistive layer 102 abuts against the lower electrode 101, the main body of the resistive layer 102 abuts against the oxygen reaction layer 104, and the oxygen reaction layer 104 abuts against the upper electrode 103 (second electrode).

[0041] In this example, the width of the protrusion 1022 can be prepared according to the requirements of different currents of the resistive random access memory. The wider the width of the protrusion 1022, the greater the current that can pass through. In this example, the width of the lower electrode 101 is greater than or equal to the width of the protrusion 1022. It is necessary to ensure that the lower electrode 101 and the protrusion overlap in the vertical direction. The overlapping area is the electric field area, ensuring that the conductive filament can be formed on the protrusion 1022.

[0042] like Figure 3 The resistive memory provided by another example of the present disclosure is shown, in which the first electrode is the upper electrode 103, and the second electrode is the lower electrode 101. The lower electrode 101 (second electrode) abuts against the substrate 10, the oxygen reaction layer 104 abuts against the lower electrode 101, the main body 1021 of the resistive layer 102 abuts against the oxygen reaction layer 104, and the protrusion 1022 of the resistive layer 102 abuts against the upper electrode 103 (first electrode).

[0043] In this example, the width of the protrusion 1022 can be prepared according to the requirements of different currents of the resistive random access memory. The wider the width of the protrusion 1022, the greater the current that can pass through. In this example, the width of the lower electrode 101 is greater than or equal to the width of the protrusion 1022. It is necessary to ensure that the second electrode (lower electrode 101) and the protrusion overlap in the vertical direction. The overlapping area is the electric field area, ensuring that the conductive filament can be formed on the protrusion 1022.

[0044] In the above examples, the constituent materials of the lower electrode 101 and the upper electrode 103 include one or more of titanium (Ti), tantalum (Ta), titanium nitride (TiN) and tantalum nitride (TaN). The constituent material of the resistive layer 102 is a transition metal oxide. In one example, the constituent material of the resistive layer 102 includes one or more of hafnium aluminum oxide (HfAlO), hafnium oxide (HfOx), aluminum oxide (AlOx) and tantalum oxide (TaOx). The oxygen reaction layer 104 is made of a metal material. In one example, the constituent material of the oxygen reaction layer 104 includes one or more of titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), and aluminum (Al). The constituent materials of the above-mentioned layers are only examples. For each layer, any material or combination of materials that can realize the function of each layer can be used, and the present disclosure is not limited.

[0045] refer to Figure 2 and Figure 3 In one example of the present disclosure, the side of the protrusion 1022 of the resistive variable layer 102 is wrapped with a protective layer, preferably, the protective layer includes a sidewall protective layer 105 and a dielectric layer 106. The sidewall protective layer 105 wraps the sidewall of the protrusion 1022, and its constituent materials include one or more of aluminum oxide (AlOx), silicon nitride, and nitrogen-doped silicon carbide, which is used to protect the protrusion 1022, block external oxygen free radicals from diffusing to the protrusion 1022 and combining with oxygen vacancies therein, and prevent the electrical characteristics of the resistive variable memory from being destroyed; the dielectric layer 106 wraps the sidewall of the sidewall protective layer 105, and is used to isolate the metal on the upper and lower sides of the dielectric layer 106, and provide electrical insulation function. The constituent material of the dielectric layer 106 can be the same as that of the sidewall protective layer 105, or it can be any other material that can have electrical insulation function, and the present disclosure does not limit this.

[0046] In another example, the protection layer may only consist of the sidewall protection layer 105 , which can block external oxygen free radicals from diffusing into the protrusion 1022 and combining with oxygen vacancies therein, and can also isolate the metals on the upper and lower sides to provide electrical insulation.

[0047] See also Figure 4 As shown in the left figure, in the resistive memory disclosed in the present invention, before the forming operation (forming) is performed, the oxygen reaction layer 104 can capture the oxygen atoms of the main body 1021 of the resistive layer 102 to form oxygen vacancies in the main body 1021. Since the protrusion 1022 is far away from and deep in the oxygen reaction layer 104, the oxygen reaction layer 104 cannot directly capture the oxygen atoms of the protrusion 1022, that is, the protrusion 1022 does not form oxygen vacancies. Therefore, before external excitation is applied, the resistive layer 102 cannot form conductive filaments.

[0048] See also Figure 4As shown in the right figure, a forming operation is performed on the resistive random access memory. Under the stimulation of the forming operation, the oxygen reaction layer 104 can capture the oxygen atoms of the protrusion 1022 (some of these oxygen atoms can be freed to the oxygen reaction layer 104, and some can be freed to the main body 1021), thereby forming oxygen vacancies in the protrusion 1022. In this way, the oxygen vacancies in the protrusion 1022 and the main body 1021 are connected to form conductive filaments.

[0049] After the forming operation, the reset operation and the set operation can be performed alternately, so that the conductive filaments of the protrusion 1022 are repeatedly disconnected and connected, and the resistive switching structure undergoes mutual conversion between resistance states (high resistance state and low resistance state), forming binary information storage of "0" state and "1" state. It can be seen that the resistive switching area in the resistive switching structure disclosed in the present invention is essentially only the protrusion 1022.

[0050] In the resistive switching layer 102 disclosed in the present invention, when a reset operation is performed, oxygen atoms are pushed back from the main body 1021 to the protruding portion 1022 to combine with oxygen vacancies, so that the conductive filaments are disconnected and the resistive switching structure becomes a high-resistance state. When a set operation is performed, oxygen atoms are captured from the protruding portion 1022 to the main body 1021, so that the conductive filaments are connected and the resistive switching structure becomes a low-resistance state. The main body 1021 and the protruding portion 1022 are made of the same material, that is, have the same work function, and the oxygen atoms move in the same material. Therefore, the reset operation excitation and set operation excitation required for the resistive switching structure are the same.

[0051] In one example of the present disclosure, the layer height of the protrusion 1022 is less than or equal to the layer height of the main body 1021, and the layer height of the main body 1021 is less than the layer height of the oxygen reaction layer 104. Preferably, the layer height of the protrusion 1022 can be 2-3nm, the layer height of the main body 1021 can be 3nm, and the layer height of the oxygen reaction layer 104 can be 8-10nm. The protrusion 1022 is thinner and narrower than the main body 1021. On the one hand, the operating excitation (such as forming voltage, reset voltage, set voltage) can be minimized. On the other hand, even if the oxygen atoms of the protrusion 1022 enter the main body 1021, the oxygen vacancies in the main body 1021 will not be filled, and the characteristics of the conductive filaments will not be affected.

[0052] Regarding the above Figure 2 and Figure 3 The present disclosure also provides a corresponding manufacturing method for a resistive random access memory.

[0053] like Figure 2 A resistive memory, wherein the manufacturing method of the resistive memory is as follows Figure 5 As shown, including:

[0054] Step 501: forming a first electrode layer on a substrate, wherein the first electrode layer includes a first electrode.

[0055] In this example, the first electrode is the lower electrode 101, and the lower electrode 101 may be wrapped by one or more dielectric layers, such as a silicon carbide film (Nitride Doped Silicon Carbide, NDC), an oxide film (Plasma Enhanced Oxide, PEOX, an oxide film prepared by plasma enhanced chemical vapor deposition (PECVD) technology), etc. Figure 6 As shown in (61).

[0056] Step 502: forming a protective layer on the first electrode layer, wherein the protective layer has a recessed portion.

[0057] After forming the first electrode layer, a protective layer is prepared. The protective layer is composed of a sidewall protective layer 105 and a dielectric layer 106. The sidewall protective layer 105 has a concave portion, such as Figure 6 In one example, the protective layer is prepared as follows:

[0058] 1. Depositing corresponding materials on the first electrode layer to form a dielectric layer 106;

[0059] 2. Depositing corresponding materials on the dielectric layer 106 to form an oxide layer (Oxide), wherein the etching rates of the dielectric layer 106 and the oxide layer (Oxide) are different;

[0060] 3. After etching the oxide layer, deposit the corresponding material to form a nitride layer;

[0061] 4. Etching the nitride layer and the dielectric layer 106 to form a recessed portion of the dielectric layer 106;

[0062] 5. Deposit corresponding materials and perform etching to form a sidewall protection layer 105 in the recessed portion of the dielectric layer 106, and obtain Figure 6 The protective layer shown in (62) is composed of a side wall protective layer 105 and a dielectric layer 106.

[0063] The above is only an example of the protective layer manufacturing process. Figure 6 The present disclosure does not limit the manufacturing process of the protective layer shown in (62).

[0064] Step 503 , depositing a resistive switching layer material to form a resistive switching layer, so that the resistive switching layer covers the protective layer, and the resistive switching layer has a main body and a protruding portion, and the protruding portion fills the concave portion, so that the protruding portion abuts against the first electrode.

[0065] After the protective layer is formed, Figure 6As shown in (63), a resistive layer material is deposited to form the resistive layer 102, wherein the portion of the resistive layer 102 filled with the recessed portion of the protection layer is the protruding portion 1022, and the other portion is the main body 1021 of the resistive layer 102.

[0066] Step 504: forming an oxygen reaction layer and a second electrode in sequence on the resistive layer.

[0067] After the resistive layer 102 is formed, corresponding materials are deposited to form the oxygen reaction layer 104 and the second electrode, and the second electrode is the upper electrode 103 .

[0068] like Figure 3 A resistive memory, wherein the manufacturing method of the resistive memory is as follows Figure 7 As shown, including:

[0069] Step 701: forming a second electrode layer on a substrate, wherein the second electrode layer includes a second electrode.

[0070] In this example, the second electrode is the lower electrode 101, and the lower electrode 101 may be wrapped by one or more dielectric layers, such as a silicon carbide film (Nitride Doped Silicon Carbide, NDC), an oxide film (Plasma Enhanced Oxide, PEOX, an oxide film prepared by plasma enhanced chemical vapor deposition (PECVD) technology), etc. Figure 8 As shown in (81).

[0071] Step 702: forming an oxygen reaction layer on the second electrode layer.

[0072] like Figure 8 As shown in (82), corresponding materials are deposited on the second electrode layer to form an oxygen reaction layer 104.

[0073] Step 703: forming a main body of a resistive switching layer on the oxygen reaction layer.

[0074] like Figure 8 As shown in (83), a resistive layer material is deposited on the oxygen reaction layer 104 to form a main body 1021 of the resistive layer 102.

[0075] Step 704: forming a protection layer on the main body, wherein the protection layer has a recessed portion.

[0076] like Figure 8 As shown in (84), a protective layer is formed on the main body 1021, and the protective layer includes a sidewall protective layer 105 and a dielectric layer 106. In one example, the protective layer is prepared as follows:

[0077] 1. A dielectric layer 106 and an oxide layer (Oxide) are sequentially deposited on the main body 1021, and the etching rates of the dielectric layer 106 and the oxide layer (Oxide) are different;

[0078] 2. After etching the oxide layer, deposit the corresponding material to form a nitride layer;

[0079] 3. Etching the nitride layer and the dielectric layer 106 to form a recessed portion of the dielectric layer 106;

[0080] 4. Deposit corresponding materials and perform etching to form a sidewall protection layer 105 in the recessed portion of the dielectric layer 106, and obtain Figure 8 The protective layer shown in (84) is composed of a side wall protective layer 105 and a dielectric layer 106.

[0081] The above is only an example of the protective layer manufacturing process. Figure 8 The protective layer shown in (84) is not limited in the present disclosure to its manufacturing process.

[0082] Step 705 , depositing a resistive switching layer material and performing a planarization process to form a raised portion of the resistive switching layer, the raised portion filling the recessed portion of the protection layer, and the raised portion abutting against the main body portion.

[0083] like Figure 8 As shown in (85)-(86), after forming the protective layer, the resistive switching layer material is deposited and planarized to obtain Figure 8 The raised portion 1022 of the resistive layer shown in (86) fills the recessed portion of the protective layer so that the raised portion 1022 abuts against the main body 1021 to form the resistive layer 102.

[0084] Step 706 , depositing a first electrode material to form a first electrode, so that the first electrode covers the protection layer and the first electrode abuts against the protrusion.

[0085] like Figure 8 As shown in (87), a first electrode material is deposited to form a first electrode, namely, an upper electrode 103. The upper electrode 103 is covered with a protective layer and abuts against the protrusion 1021.

[0086] In another example of the present disclosure, as Figure 2 The deformation of the resistive switching structure shown in FIG. Fig. 9 As shown, the protruding portion 1022 of the resistive switching layer 102 is located at the concave portion of the lower electrode 101, and the resistive switching structure does not have a protective layer. The manufacturing process of the resistive switching memory is as follows:

[0087] 1. A first electrode layer is formed on a substrate, wherein the first electrode layer includes a first electrode. In this example, the first electrode is a lower electrode 101 .

[0088] 2. A depression is formed in the lower electrode 101. The present disclosure does not limit the method for forming the depression.

[0089] 3. Deposit a resistive layer material to form a resistive layer 102, so that the resistive layer 102 covers the first electrode layer. The resistive layer 102 has a main body 1021 and a protruding portion 1022. The protruding portion 1022 fills the concave portion of the first electrode, so that the protruding portion 1022 abuts against the first electrode.

[0090] 4. An oxygen reaction layer 104 and a second electrode 103 are sequentially formed on the resistive layer 102 , and a main body 1021 of the resistive layer abuts against the oxygen reaction layer 104 .

[0091] In the resistive memory disclosed in the present invention, the resistive region is reduced by the raised portion of the resistive layer, so that the electric field is concentrated in the area corresponding to the raised portion. In this way, the formation position of the conductive filament can be controlled by setting the position of the raised portion, thereby improving the uniformity of the device.

[0092] The basic principles of the present application are described above in conjunction with specific embodiments. However, it should be noted that the advantages, strengths, effects, etc. mentioned in the present application are only examples and not limitations, and it cannot be considered that these advantages, strengths, effects, etc. are required by each embodiment of the present application. In addition, the specific details disclosed above are only for the purpose of illustration and ease of understanding, not for limitation, and the above details do not limit the present application to being implemented by adopting the above specific details.

[0093] The block diagrams of the devices, apparatuses, equipment, and systems involved in this application are only illustrative examples and are not intended to require or imply that they must be connected, arranged, and configured in the manner shown in the block diagram. As will be appreciated by those skilled in the art, these devices, apparatuses, equipment, and systems can be connected, arranged, and configured in any manner. Words such as "including", "comprising", "having", etc. are open words, referring to "including but not limited to", and can be used interchangeably with them. The words "or" and "and" used here refer to the words "and / or" and can be used interchangeably with them, unless the context clearly indicates otherwise. The words "such as" used here refer to the phrase "such as but not limited to", and can be used interchangeably with them.

[0094] It should also be noted that in the apparatus, device and method of the present application, each component or each step can be decomposed and / or recombined. Such decomposition and / or recombination should be regarded as equivalent solutions of the present application.

[0095] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other aspects without departing from the scope of the present application. Therefore, the present application is not intended to be limited to the aspects shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

[0096] The above description has been given for the purpose of illustration and description. In addition, this description is not intended to limit the embodiments of the present application to the forms disclosed herein. Although multiple example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, changes, additions and sub-combinations thereof.

Claims

1. A resistive random access memory, characterized in that: include: A substrate and a resistive switching structure located on the substrate, wherein the resistive switching structure comprises: a first electrode, a resistive switching layer, an oxygen reaction layer, and a second electrode which are stacked in sequence; The resistive layer has a main body and a convex part, the convex part abuts against the first electrode, the main body abuts against the oxygen reaction layer, and the width of the convex part is smaller than the width of the main body.

2. The resistive random access memory according to claim 1, characterized in that: The first electrode is a lower electrode and abuts against the substrate. The width of the first electrode is greater than or equal to the width of the protruding portion. The first electrode and the protruding portion overlap in a vertical direction.

3. The resistive random access memory according to claim 1, characterized in that: The second electrode is a lower electrode and abuts against the substrate. The width of the second electrode is greater than or equal to the width of the protruding portion. The second electrode and the protruding portion overlap in a vertical direction.

4. The resistive random access memory according to claim 1, wherein: The side surfaces of the raised portions of the resistive switching layer are wrapped with a protective layer.

5. The resistive random access memory according to claim 4, characterized in that: The protection layer comprises a sidewall protection layer and a dielectric layer, the sidewall protection layer wraps the protrusion, and the dielectric layer wraps the sidewall protection layer.

6. The resistive random access memory according to claim 1, characterized in that: The layer height of the protrusion is smaller than the layer height of the main body, and the layer height of the main body is smaller than the layer height of the oxygen reaction layer.

7. The resistive random access memory according to claim 1 or 6, characterized in that: The oxygen reaction layer is used to capture oxygen atoms in the main body of the resistive switching layer to form oxygen vacancies in the main body.

8. The resistive random access memory according to claim 7, characterized in that: The oxygen reaction layer is also used to capture oxygen atoms in the protrusion under the action of operational excitation, forming oxygen vacancies in the protrusion, so that the oxygen vacancies in the protrusion and the main body are connected to form conductive filaments.

9. A method for manufacturing a resistive random access memory, characterized in that: include: forming a first electrode layer on a substrate, wherein the first electrode layer comprises a first electrode; forming a protective layer on the first electrode layer, wherein the protective layer has a recessed portion; Depositing a resistive switching layer material to form a resistive switching layer, so that the resistive switching layer covers the protective layer, the resistive switching layer has a main body and a convex portion, the convex portion fills the concave portion, so that the convex portion abuts against the first electrode; An oxygen reaction layer and a second electrode are sequentially formed on the resistive layer.

10. A method for manufacturing a resistive random access memory, characterized in that: include: forming a second electrode layer on the substrate, wherein the second electrode layer includes a second electrode; forming an oxygen reaction layer on the second electrode layer; forming a main body of a resistive switching layer on the oxygen reaction layer; forming a protective layer on the main body, wherein the protective layer has a recessed portion; Depositing a resistive switching layer material and performing a planarization process to form a raised portion of the resistive switching layer, wherein the raised portion fills the recessed portion and the raised portion abuts against the main body portion; A first electrode material is deposited to form a first electrode, so that the first electrode covers the protection layer and the first electrode abuts against the protrusion.

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