GaN HEMTs resistant to single particle irradiation and reinforcement preparation process thereof
By using a variety of advanced process technologies in the preparation process of GaN HEMTs to build a complex layer structure, the defects introduced by GaN HEMTs are solved during the preparation process, their voltage resistance and radiation resistance are improved, and their use efficiency is improved.
Patent Information
- Application Number
- CN202411436548.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-15
- Publication Date
- 2025-03-04
AI Technical Summary
During the preparation process, existing GaN HEMTs are prone to introduce vacancy defects, translocation defects, lattice dislocation defects and impurity pollution, which affects device quality and leads to performance degradation, limiting their application in space environments.
Laser pulse deposition process, organic metal chemical vapor deposition process, plasma enhanced chemical vapor deposition technology and photolithography technology are used to construct substrates, GaN buffer layer, GaN channel layer, AlGaN barrier layer, p-AlGaN barrier layer, GaN cap layer, passivation layer, gate, source and drain to prepare GaN HEMTs that resist single-particle irradiation.
It effectively reduces the surface defects of GaN HEMTs, improves its resistance to voltage and single-particle radiation, and improves the efficiency of the device.
Smart Images
Figure CN119562554A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of semiconductor processing, and in particular to a GaN HEMTs resistant to single particle irradiation and a reinforced preparation process thereof. Background Art
[0002] As the foundation and core of power electronics technology, power electronic devices play an important role in mobile communications, satellite positioning, electronic radar, national defense, etc. GaN (gallium nitride) breaks through the limitations of traditional silicon-based devices and has the characteristics of high voltage resistance, low on-resistance, high temperature and high voltage resistance. It has become a research hotspot in the field of power electronic devices.
[0003] In the space environment, electronic equipment on board spacecraft is affected by radiation, and electrical properties will change instantly, causing the electronic equipment to burn out. Although GaN material itself has good radiation resistance, it will inevitably introduce defects in the device preparation process. These defects mainly include vacancy defects and transposition defects of the material generated during the growth process, dislocation defects of the lattice, and impurity contamination. These defects not only affect the quality of GaN, but may also cause device performance degradation. They are important issues that need to be resolved in the preparation process, which hinders the further application of GaN HEMTs (gallium nitride transistors) in the space environment.
[0004] Therefore, in order to solve the technical problems of existing GaN HEMTs such as material vacancy defects and substitution defects, lattice dislocation defects and impurity contamination, there is an urgent need for a GaN HEMT that is resistant to single particle irradiation and a reinforced preparation process thereof. Summary of the invention
[0005] The purpose of the present application is to provide a GaN HEMTs resistant to single particle irradiation and a reinforcement preparation process thereof. By means of a laser pulse deposition process, an organic metal chemical vapor deposition process, a plasma enhanced chemical vapor deposition technology and a photolithography technology, a substrate, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer, a p-AlGaN barrier layer, a GaN cap layer, a passivation layer, a gate, a source and a drain are constructed to obtain GaN HEMTs resistant to single particle irradiation, so as to solve the problems of defects such as vacancy defects and transposition defects of the material, dislocation defects of the lattice and impurity contamination in the existing GaN HEMTs, effectively improve the voltage resistance and single particle irradiation resistance of GaN HEMTs resistant to single particle irradiation, and improve the use efficiency of GaN HEMTs resistant to single particle irradiation.
[0006] In a first aspect, the present application provides a single particle irradiation resistant GaN HEMTs, comprising a substrate, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer, a p-AlGaN barrier layer, a GaN cap layer, a passivation layer, a gate, a source and a drain; The substrate, the GaN buffer layer, the GaN channel layer, the AlGaN barrier layer, the p-AlGaN barrier layer and the GaN cap layer are arranged in sequence from bottom to top; the passivation layer covers the p-AlGaN barrier layer and wraps the GaN cap layer; the source and the drain are respectively arranged on opposite sides of the upper surface of the GaN channel layer, and respectively penetrate the AlGaN barrier layer, the p-AlGaN barrier layer and the passivation layer; the gate is arranged above the GaN cap layer and penetrates the passivation layer.
[0007] The single-particle irradiation-resistant GaN HEMTs provided in the present application have good radiation resistance and voltage resistance. The single-particle irradiation-resistant GaN HEMTs are constructed by a substrate, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer, a p-AlGaN barrier layer, a GaN cap layer, a passivation layer, a gate, a source and a drain. The above structure can reduce the surface defects of the single-particle irradiation-resistant GaN HEMTs, effectively improve the voltage resistance and single-particle irradiation resistance of the single-particle irradiation-resistant GaN HEMTs, and improve the use efficiency of the single-particle irradiation-resistant GaN HEMTs.
[0008] Optionally, the substrate is made of sapphire, gallium nitride, silicon or silicon carbide.
[0009] Optionally, the passivation layer is made of silicon nitride.
[0010] Optionally, the lengths and widths of the substrate, the GaN buffer layer, the GaN channel layer, the AlGaN barrier layer and the p-AlGaN barrier layer are equal.
[0011] Optionally, the length and width of the GaN cap layer are smaller than the length and width of the p-AlGaN barrier layer.
[0012] Optionally, the thickness of the GaN buffer layer is 1000-8000nm, the thickness of the GaN channel layer is 200-1000nm, the thickness of the AlGaN barrier layer is 3-50 nm, the thickness of the p-AlGaN barrier layer is 3-15 nm, the thickness of the GaN cap layer is 20‒150 nm, and the thickness of the passivation layer is 20-200nm.
[0013] The single-particle irradiation-resistant GaN HEMTs provided in the present application have good radiation resistance and voltage resistance. By limiting the thickness of the substrate, GaN buffer layer, GaN channel layer, AlGaN barrier layer, p-AlGaN barrier layer, GaN cap layer and passivation layer, it is ensured that the gallium nitride crystal has a small volume while having good radiation resistance and voltage resistance.
[0014] In a second aspect, a reinforcement preparation process for single particle irradiation resistant GaN HEMTs is used to prepare the single particle irradiation resistant GaN HEMTs described above, comprising: growing an AlN nucleation layer on the substrate by a laser pulse deposition process; Using an organic metal chemical vapor deposition process, sequentially growing the GaN buffer layer, the GaN channel layer, the AlGaN barrier layer, the p-AlGaN barrier layer and the GaN cap layer from bottom to top on the AlN nucleation layer; The passivation layer is prepared on the p-AlGaN barrier layer and the GaN cap layer by using plasma enhanced chemical vapor deposition technology, so that the passivation layer covers the p-AlGaN barrier layer and wraps the GaN cap layer; The source electrode, the gate electrode and the drain electrode are prepared in a preset electrode region by using photolithography technology to obtain the GaN HEMTs resistant to single particle irradiation.
[0015] The single-particle irradiation resistant GaN HEMTs reinforcement preparation process prepares a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer, a p-AlGaN barrier layer, a GaN cap layer, a passivation layer, a source electrode, a gate electrode and a drain electrode on a substrate through a laser pulse deposition process, an organic metal chemical vapor deposition process, a plasma enhanced chemical vapor deposition technology and a photolithography technology to obtain the single-particle irradiation resistant GaN HEMTs, solves the problem that the existing GaN HEMTs may have defects such as vacancy defects and transposition defects of the material, dislocation defects of the lattice and impurity pollution, effectively improves the voltage resistance and single-particle irradiation resistance of the single-particle irradiation resistant GaN HEMTs, and improves the use efficiency of the single-particle irradiation resistant GaN HEMTs.
[0016] Optionally, the GaN buffer layer, the GaN channel layer, the AlGaN barrier layer, the p-AlGaN barrier layer and the GaN cap layer are grown sequentially from bottom to top on the AlN nucleation layer by using an organic metal chemical vapor deposition process, comprising: Using the metal organic chemical vapor deposition process, sequentially growing the GaN buffer layer, the GaN channel layer, the primary AlGaN barrier layer and the primary GaN cap layer from bottom to top on the AlN nucleation layer; Processing the primary AlGaN barrier layer and the primary GaN cap layer by thermal diffusion or ion implantation to obtain the AlGaN barrier layer, the p-AlGaN barrier layer and the secondary GaN cap layer; The secondary GaN cap layer outside the preset protection area is removed by using photolithography technology to obtain the GaN cap layer.
[0017] The reinforcement preparation process of GaN HEMTs resistant to single particle irradiation provided in the present application can prepare GaN HEMTs resistant to single particle irradiation. A GaN buffer layer, a GaN channel layer, an AlGaN barrier layer, a p-AlGaN barrier layer and a GaN cap layer are prepared by an organic metal chemical vapor deposition process, a thermal diffusion or ion implantation method and a photolithography technology, so that the GaN HEMTs resistant to single particle irradiation have good radiation resistance and voltage resistance.
[0018] Optionally, the preset electrode region includes a preset gate region, a preset source region and a preset drain region; the preset gate region is within the preset protection region, and the preset source region and the preset drain region are respectively located on opposite sides of the single-particle irradiation resistant GaN HEMTs.
[0019] Optionally, the source electrode, the gate electrode and the drain electrode are prepared in a preset electrode region by using photolithography technology to obtain the single particle irradiation resistant GaN HEMTs, comprising: Using the photolithography technology, etching the passivation layer in the preset gate region, etching the AlGaN barrier layer, the p-AlGaN barrier layer and the passivation layer in the preset source region, and etching the AlGaN barrier layer, the p-AlGaN barrier layer and the passivation layer in the preset drain region; The gate, the source and the drain are respectively prepared in the preset gate region, the preset source region and the preset drain region.
[0020] Beneficial effects: The single-particle irradiation-resistant GaN HEMTs and the reinforcement preparation process thereof provided in the present application are constructed by using a substrate, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer, a p-AlGaN barrier layer, a GaN cap layer, a passivation layer, a gate, a source and a drain, in combination with a corresponding reinforcement preparation process, to obtain single-particle irradiation-resistant GaN HEMTs, thereby solving the problems of defects such as vacancy defects and transposition defects of the material, dislocation defects of the lattice, and impurity contamination in the existing GaN HEMTs, effectively improving the voltage resistance and single-particle irradiation resistance of the single-particle irradiation-resistant GaN HEMTs, and improving the utilization efficiency of the single-particle irradiation-resistant GaN HEMTs. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 A schematic diagram of the structure of GaN HEMTs resistant to single particle irradiation provided in an embodiment of the present application.
[0022] Figure 2 A flow chart of a reinforcement preparation process for GaN HEMTs resistant to single particle irradiation provided in an embodiment of the present application. Explanation of reference numerals: 1. substrate; 2. GaN buffer layer; 3. GaN channel layer; 4. AlGaN barrier layer; 5. p-AlGaN barrier layer; 6. GaN cap layer; 7. passivation layer; 8. gate; 9. source; 10. drain. DETAILED DESCRIPTION
[0023] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.
[0024] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.
[0025] Please refer to Figure 1 , Figure 1 The single particle irradiation resistant GaN HEMTs provided in the embodiment of the present application include a substrate 1, a GaN buffer layer 2, a GaN channel layer 3, an AlGaN barrier layer 4, a p-AlGaN barrier layer 5, a GaN cap layer 6, a passivation layer 7, a gate 8, a source 9 and a drain 10; A substrate 1, a GaN buffer layer 2, a GaN channel layer 3, an AlGaN barrier layer 4, a p-AlGaN barrier layer 5 and a GaN cap layer 6 are arranged in sequence from bottom to top; a passivation layer 7 covers the p-AlGaN barrier layer 5 and wraps the GaN cap layer 6; a source electrode 9 and a drain electrode 10 are respectively arranged on opposite sides of the upper surface of the GaN channel layer 3, and respectively penetrate the AlGaN barrier layer 4, the p-AlGaN barrier layer 5 and the passivation layer 7; a gate electrode 8 is arranged above the GaN cap layer 6 and penetrates the passivation layer 7.
[0026] In a specific application, a GaN buffer layer 2, a GaN channel layer 3, an AlGaN barrier layer 4, a p-AlGaN barrier layer 5 and a GaN cap layer 6 are grown on a substrate 1 by using an organic metal chemical vapor deposition process, a passivation layer 7 is prepared by using a plasma enhanced chemical vapor deposition technique, and a gate 8, a source 9 and a drain 10 are prepared by using a photolithography technique, thereby preparing GaN HEMTs resistant to single particle irradiation.
[0027] Among them, the substrate 1 is used to grow the required materials; the GaN buffer layer is used to reduce the lattice mismatch and stress between the substrate 1 and the upper GaN material (GaN channel layer 3); the GaN channel layer 3 is used as a channel for carrier flow to improve the electron mobility of the GaN HEMTs resistant to single particle irradiation; the AlGaN barrier layer 4 and the p-AlGaN barrier layer 5 are used to cooperate to generate and regulate the two-dimensional electron gas; the GaN cap layer 6 is used to improve the voltage resistance of the GaN HEMTs resistant to single particle irradiation; the passivation layer 7 is used to protect the surface of the GaN HEMTs resistant to single particle irradiation from mechanical damage or chemical corrosion, thereby extending the service life of the GaN HEMTs resistant to single particle irradiation; the gate 8 is used to control the conduction and cutoff of the GaN HEMTs resistant to single particle irradiation; the source 9 is used to output current from the GaN HEMTs resistant to single particle irradiation; and the drain 10 is used to input current to the GaN HEMTs resistant to single particle irradiation.
[0028] The single-particle irradiation-resistant GaN HEMTs provided in the present application are constructed by a substrate, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer, a p-AlGaN barrier layer, a GaN cap layer, a passivation layer, a gate, a source and a drain to obtain the single-particle irradiation-resistant GaN HEMTs. The above structure can reduce the surface defects of the single-particle irradiation-resistant GaN HEMTs, effectively improve the voltage resistance and single-particle irradiation resistance of the single-particle irradiation-resistant GaN HEMTs, and improve the use efficiency of the single-particle irradiation-resistant GaN HEMTs.
[0029] Specifically, the material of the substrate 1 includes sapphire, gallium nitride, silicon or silicon carbide.
[0030] In specific applications, the substrate 1 provides a stable crystal structure, on which the required material layer can be grown. Different substrate materials can be selected according to different design requirements. Among them, sapphire has good stability; GaN (gallium nitride) single crystal material is the most ideal substrate material for GaN growth; Si substrate has good heat dissipation function and low cost; devices made of SiC (silicon carbide) substrate have very good electrical and thermal conductivity, which is conducive to making large-area high-power devices, but the preparation cost is high.
[0031] Specifically, the material of the passivation layer 7 is silicon nitride.
[0032] In a specific application, the material of the passivation layer 7 is set to be silicon nitride, that is, SiN x , SiN x It is an amorphous material whose properties depend on the ratio of nitrogen to silicon, that is, the value of x. When the value of x changes, the physical and chemical properties of silicon nitride will also change. Silicon nitride does have many forms, including Si3N4, Si2N2, SiN, etc. As the material of the passivation layer 7, silicon nitride has the advantages of high hardness, high melting point, high corrosion resistance, excellent electrical and optical properties, etc. It can effectively protect GaN HEMTs that are resistant to single particle irradiation and improve the efficiency of GaN HEMTs that are resistant to single particle irradiation.
[0033] Specifically, the lengths and widths of the substrate 1, the GaN buffer layer 2, the GaN channel layer 3, the AlGaN barrier layer 4 and the p-AlGaN barrier layer 5 are equal; the length and width of the GaN cap layer 6 are respectively smaller than the length and width of any one of the substrate 1, the GaN buffer layer 2, the GaN channel layer 3, the AlGaN barrier layer 4, the p-AlGaN barrier layer 5 and the passivation layer 7.
[0034] In a specific application, in the single-particle irradiation resistant GaN HEMTs, the lengths and widths of the substrate 1, the GaN buffer layer 2, the GaN channel layer 3, the AlGaN barrier layer 4 and the p-AlGaN barrier layer 5 are equal. Since the GaN cap layer 6 needs to be limited within a preset protection area, the portion of the GaN cap layer 6 outside the preset protection area needs to be removed when preparing the single-particle irradiation resistant GaN HEMTs. Therefore, the length and width of the GaN cap layer 6 are smaller than any one of the substrate 1, the GaN buffer layer 2, the GaN channel layer 3, the AlGaN barrier layer 4 and the p-AlGaN barrier layer 5, so that the passivation layer 7 covers the entire GaN cap layer 6 and most of the p-AlGaN barrier layer 5.
[0035] Specifically, the barrier layer 4 and the p-AlGaN barrier layer 5 are used to collaboratively generate and regulate the two-dimensional electron gas.
[0036] Specifically, the thickness of the GaN buffer layer 2 is 1000-8000 nm, the thickness of the GaN channel layer 3 is 200-1000 nm, the thickness of the AlGaN barrier layer 4 is 3-50 nm, the thickness of the p-AlGaN barrier layer 5 is 3-15 nm, the thickness of the GaN cap layer 6 is 20‒150 nm, and the thickness of the passivation layer 7 is 20-200 nm.
[0037] In specific applications, when the required material is grown on the substrate, it is necessary to control the growth of the corresponding material layer within the corresponding height so that the GaN HEMTs resistant to single particle irradiation have good voltage resistance and radiation resistance while ensuring that the thickness of the GaN HEMTs resistant to single particle irradiation is not too high.
[0038] Please refer to Figure 2 , Figure 2 The reinforcement preparation process of GaN HEMTs resistant to single particle irradiation provided in the embodiment of the present application is used to prepare the GaN HEMTs resistant to single particle irradiation as described above, including: Step S101, growing an AlN nucleation layer on a substrate 1 by a laser pulse deposition process; Step S102, using an organic metal chemical vapor deposition process, sequentially growing a GaN buffer layer 2, a GaN channel layer 3, an AlGaN barrier layer 4, a p-AlGaN barrier layer 5 and a GaN cap layer 6 on the AlN nucleation layer from bottom to top; Step S103, using plasma enhanced chemical vapor deposition technology to prepare a passivation layer 7 on the p-AlGaN barrier layer 5 and the GaN cap layer 6, so that the passivation layer 7 covers the p-AlGaN barrier layer 5 and wraps the GaN cap layer 6; Step S104, using photolithography technology, prepare the source 9, the gate 8 and the drain 10 in the preset electrode area to obtain GaN HEMTs resistant to single particle irradiation.
[0039] The single-particle irradiation resistant GaN HEMTs reinforcement preparation process prepares a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer, a p-AlGaN barrier layer, a GaN cap layer, a passivation layer, a source electrode, a gate electrode and a drain electrode on a substrate through a laser pulse deposition process, an organic metal chemical vapor deposition process, a plasma enhanced chemical vapor deposition technology and a photolithography technology to obtain the single-particle irradiation resistant GaN HEMTs, solves the problem that the existing GaN HEMTs may have defects such as vacancy defects and transposition defects of the material, dislocation defects of the lattice and impurity pollution, effectively improves the voltage resistance and single-particle irradiation resistance of the single-particle irradiation resistant GaN HEMTs, and improves the use efficiency of the single-particle irradiation resistant GaN HEMTs.
[0040] Specifically, in step S101, a laser pulse deposition process is used to grow an AlN (aluminum nitride) nucleation layer on the substrate 1, so that a corresponding AlN thin film is formed on the substrate at a low temperature, and the growth thickness of the AlN nucleation layer is 50-500 nm. The laser pulse deposition process is a prior art and will not be described in detail here.
[0041] Specifically, in step S102, a GaN buffer layer 2, a GaN channel layer 3, an AlGaN barrier layer 4, a p-AlGaN barrier layer 5 and a GaN cap layer 6 are grown sequentially from bottom to top on the AlN nucleation layer by using an organic metal chemical vapor deposition process, including: Using an organic metal chemical vapor deposition process, a GaN buffer layer 2, a GaN channel layer 3, a primary AlGaN barrier layer and a primary GaN cap layer are sequentially grown on the AlN nucleation layer from bottom to top; Processing the primary AlGaN barrier layer and the primary GaN cap layer by thermal diffusion or ion implantation to obtain an AlGaN barrier layer 4, a p-AlGaN barrier layer 5 and a secondary GaN cap layer; By using photolithography technology, the secondary GaN cap layer outside a preset protection area (the preset protection area is the area where the GaN cap layer 6 is located, and the preset protection area is set according to the length and width of the GaN cap layer 6) is removed to obtain the GaN cap layer 6.
[0042] In step S102, an organic metal chemical vapor deposition process (MOCVD) is used, with organic compounds of group III and group II elements in the periodic table (such as trimethylaluminum C3H9Al and trimethylgallium Ga(CH3)3) and hydrides of group V and VI elements (such as ammonia NH3) as crystal growth source materials, vapor phase epitaxy is performed on the substrate in a thermal decomposition reaction manner, and a GaN buffer layer, a GaN channel layer, a primary AlGaN (aluminum gallium nitride) barrier layer and a primary GaN cap layer are grown in sequence from bottom to top on the AlN nucleation layer; Mg is doped into the primary GaN cap layer and part of the primary AlGaN barrier layer by thermal diffusion or ion implantation to obtain an AlGaN barrier layer 4, a p-AlGaN barrier layer 5 and a secondary GaN cap layer; photolithography technology, inductive plasma etching (ICP) technology, and O2 plasma are used to remove the secondary GaN cap layer outside the preset protection area to obtain a GaN cap layer 6. After obtaining the GaN cap layer 6, it is necessary to remove the damaged portion of the surface of the p-AlGaN barrier layer 5 by atomic layer etching using BCl3 plasma. Among them, the organic metal chemical vapor deposition process, thermal diffusion or ion implantation method and photolithography technology are existing technologies and will not be described in detail here.
[0043] The two-step growth method of laser pulse deposition and metal organic chemical vapor deposition can effectively reduce the defect density of GaN materials and improve the radiation resistance of transistors (GaN HEMTs resistant to single particle irradiation). In addition, the new transistor structure (i.e. Figure 1 The structure in the device can further reduce the surface defects of the device, thereby further improving the radiation resistance of the transistor.
[0044] Specifically, in step S103, a plasma enhanced chemical vapor deposition (PECVD) technique is used to deposit SiN on the surface of the p-AlGaN barrier layer 5 and the GaN cap layer 6 that are in contact with air. x , a passivation layer 7 is prepared, so that the passivation layer 7 covers the p-AlGaN barrier layer 5 and wraps the GaN cap layer 6. Among them, the plasma enhanced chemical vapor deposition technology is a prior art and will not be described in detail here.
[0045] Specifically, the preset electrode region includes a preset gate region, a preset source region and a preset drain region; wherein the preset gate region is within a preset protection region, and the preset source region and the preset drain region are respectively located on opposite sides of the single particle irradiation resistant GaN HEMTs.
[0046] Specifically, in step S104, a source electrode, a gate electrode and a drain electrode are prepared in a preset electrode region by using photolithography technology to obtain GaN HEMTs resistant to single particle irradiation, including: Using photolithography technology, etching the passivation layer 7 in the preset gate region, etching the AlGaN barrier layer 4, the p-AlGaN barrier layer 5 and the passivation layer 7 in the preset source region, and etching the AlGaN barrier layer 4, the p-AlGaN barrier layer 5 and the passivation layer 7 in the preset drain region; The gate 8, source 9 and drain 10 are respectively prepared in the preset gate region, the preset source region and the preset drain region to obtain GaN HEMTs resistant to single particle irradiation.
[0047] In step S104, photolithography technology is used to etch the portion of the passivation layer 7 on the upper surface of the GaN cap layer 6 located in the preset gate area, the AlGaN barrier layer 4, the p-AlGaN barrier layer 5 and the passivation layer 7 in the preset source area, and the AlGaN barrier layer 4, the p-AlGaN barrier layer 5 and the passivation layer 7 in the preset drain area.
[0048] In the preset gate region, a gate 8 made of Ni (nickel) / Au (gold) is evaporated on the upper surface of the GaN cap layer 6 to form a Schottky contact through the gate 8 and the GaN cap layer 6 .
[0049] The source electrode 9 and the drain electrode 10 are prepared by using Ti (titanium) / Al (aluminum) / NiAu (nickel-gold alloy). In the preset source region and the preset drain region, holes are evaporated to place the source electrode 9 and the drain electrode 10, so that the source electrode 9 is in contact with the AlGaN barrier layer 4 and the p-AlGaN barrier layer 5 respectively (i.e., semiconductor-metal contact), and the drain electrode 10 is in contact with the AlGaN barrier layer 4 and the p-AlGaN barrier layer 5 respectively, thereby forming an ohmic contact.
[0050] As can be seen from the above, the reinforcement preparation process of the GaN HEMTs resistant to single particle irradiation is to grow an AlN nucleation layer on a substrate 1 by a laser pulse deposition process, and to grow a GaN buffer layer 2, a GaN channel layer 3, an AlGaN barrier layer 4, a p-AlGaN barrier layer 5 and a GaN cap layer 6 on the AlN nucleation layer from bottom to top by an organic metal chemical vapor deposition process, and to prepare a passivation layer 7 on the upper surface of the GaN cap layer 6 by plasma enhanced chemical vapor deposition technology, and to prepare a source electrode 9, a gate electrode 8 and a drain electrode 10 in a preset electrode region by photolithography technology to obtain GaN HEMTs resistant to single particle irradiation, solve the problem that the existing GaN HEMTs will have defects such as vacancy defects and transposition defects of the material, dislocation defects of the lattice and impurity contamination, effectively improve the voltage resistance and single particle irradiation resistance of the GaN HEMTs resistant to single particle irradiation, and improve the use efficiency of the GaN HEMTs resistant to single particle irradiation.
[0051] In the embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some communication interfaces, and the indirect coupling or communication connection of the devices or units can be electrical, mechanical or other forms.
[0052] In addition, the units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, and may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
[0053] Furthermore, the functional modules in the various embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.
[0054] In this document, relational terms such as first and second, etc. are used merely to distinguish one entity or operation from another entity or operation, but do not necessarily require or imply any such actual relationship or order between these entities or operations.
[0055] The above description is only an embodiment of the present application and is not intended to limit the protection scope of the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. A GaN HEMTs resistant to single particle irradiation, characterized in that: It comprises a substrate (1), a GaN buffer layer (2), a GaN channel layer (3), an AlGaN barrier layer (4), a p-AlGaN barrier layer (5), a GaN cap layer (6), a passivation layer (7), a gate (8), a source electrode (9) and a drain electrode (10); The substrate (1), the GaN buffer layer (2), the GaN channel layer (3), the AlGaN barrier layer (4), the p-AlGaN barrier layer (5) and the GaN cap layer (6) are arranged in sequence from bottom to top; the passivation layer (7) covers the p-AlGaN barrier layer (5) and wraps the GaN cap layer (6); the source electrode (9) and the drain electrode (10) are respectively arranged on opposite sides of the upper surface of the GaN channel layer (3) and respectively penetrate the AlGaN barrier layer (4), the p-AlGaN barrier layer (5) and the passivation layer (7); the gate electrode (8) is arranged above the GaN cap layer (6) and penetrates the passivation layer (7).
2. The single particle irradiation resistant GaN HEMTs according to claim 1, characterized in that: The material of the substrate (1) is sapphire, gallium nitride, silicon or silicon carbide.
3. The single particle irradiation resistant GaN HEMTs according to claim 1, characterized in that: The material of the passivation layer (7) is silicon nitride.
4. The single particle irradiation resistant GaN HEMTs according to claim 1, characterized in that: The lengths and widths of the substrate (1), the GaN buffer layer (2), the GaN channel layer (3), the AlGaN barrier layer (4) and the p-AlGaN barrier layer (5) are all equal.
5. The single particle irradiation resistant GaN HEMTs according to claim 1, characterized in that: The length and width of the GaN cap layer (6) are smaller than the length and width of the p-AlGaN barrier layer (5).
6. The single particle irradiation resistant GaN HEMTs according to claim 5, characterized in that: The thickness of the GaN buffer layer (2) is 1000-8000 nm, the thickness of the GaN channel layer (3) is 200-1000 nm, the thickness of the AlGaN barrier layer (4) is 3-50 nm, the thickness of the p-AlGaN barrier layer (5) is 3-15 nm, the thickness of the GaN cap layer (6) is 20-150 nm, and the thickness of the passivation layer (7) is 20-200 nm.
7. A process for strengthening and preparing GaN HEMTs resistant to single particle irradiation, characterized in that: The method for preparing the single particle irradiation resistant GaN HEMTs according to claim 6 comprises: Growing an AlN nucleation layer on the substrate (1) by a laser pulse deposition process; Using an organic metal chemical vapor deposition process, the GaN buffer layer (2), the GaN channel layer (3), the AlGaN barrier layer (4), the p-AlGaN barrier layer (5) and the GaN cap layer (6) are grown in sequence from bottom to top on the AlN nucleation layer; The passivation layer (7) is prepared on the p-AlGaN barrier layer (5) and the GaN cap layer (6) by using a plasma enhanced chemical vapor deposition technique, so that the passivation layer (7) covers the p-AlGaN barrier layer (5) and wraps the GaN cap layer (6); The source electrode (9), the gate electrode (8) and the drain electrode (10) are prepared in a preset electrode region by using photolithography technology to obtain the single particle irradiation resistant GaN HEMTs.
8. The process for reinforcing and preparing GaN HEMTs resistant to single particle irradiation according to claim 7, characterized in that: The GaN buffer layer (2), the GaN channel layer (3), the AlGaN barrier layer (4), the p-AlGaN barrier layer (5) and the GaN cap layer (6) are grown in sequence from bottom to top on the AlN nucleation layer using an organic metal chemical vapor deposition process, comprising: Using the metal organic chemical vapor deposition process, the GaN buffer layer (2), the GaN channel layer (3), the primary AlGaN barrier layer and the primary GaN cap layer are sequentially grown from bottom to top on the AlN nucleation layer; Processing the primary AlGaN barrier layer and the primary GaN cap layer by means of thermal diffusion or ion implantation to obtain the AlGaN barrier layer (4), the p-AlGaN barrier layer (5) and the secondary GaN cap layer; The secondary GaN cap layer outside the preset protection area is removed by using photolithography technology to obtain the GaN cap layer (6).
9. The process for reinforcing and preparing GaN HEMTs resistant to single particle irradiation according to claim 7, characterized in that: The preset electrode region includes a preset gate region, a preset source region and a preset drain region; the preset gate region is within the preset protection region, and the preset source region and the preset drain region are respectively located on opposite sides of the single particle irradiation resistant GaN HEMTs.
10. The process for reinforcing and preparing GaN HEMTs resistant to single particle irradiation according to claim 9, characterized in that: The source electrode (9), the gate electrode (8) and the drain electrode (10) are prepared in a preset electrode region by using photolithography technology to obtain the single particle irradiation resistant GaN HEMTs, comprising: Using the photolithography technology, etching the passivation layer (7) in the preset gate region, etching the AlGaN barrier layer (4), the p-AlGaN barrier layer (5) and the passivation layer (7) in the preset source region, and etching the AlGaN barrier layer (4), the p-AlGaN barrier layer (5) and the passivation layer (7) in the preset drain region; The gate (8), the source (9) and the drain (10) are respectively prepared in the preset gate region, the preset source region and the preset drain region to obtain the single particle irradiation resistant GaN HEMTs.