Method for improving uneven temperature control of electrostatic chuck of etching cavity

Abstract

The invention provides a method for improving uneven temperature control of an etching cavity electrostatic chuck, which comprises the following steps: providing an etching machine table, and installing a new electrostatic chuck in an etching cavity of the etching machine table; a first preset number of wafers are provided, one wafer is conveyed to the electrostatic chuck every time to be fixed, first etching gas is input to clean the etching cavity, and the first etching gas is oxygen; a second preset number of wafers are provided, one wafer is conveyed to the electrostatic chuck every time to be fixed, second etching gas is input for aging treatment, and the second etching gas comprises fluorine-containing etching gas; and repeatedly executing the steps for a preset number of times. The surface state of a new electrostatic chuck can be rapidly changed through aging treatment, residual polymers can be removed through cleaning treatment, the situation that excessive polymer deposition influences other parts is avoided, and aging of the electrostatic chuck can be rapidly achieved without affecting the service life and the etching effect of an etching cavity through circulation of the two processes.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a method for improving uneven temperature control of an electrostatic chuck in an etching chamber. Background Art

[0002] Dry etching is a process of selectively removing unwanted materials from the surface of a semiconductor substrate using physical and / or chemical methods. It is an important process in the semiconductor device and integrated circuit manufacturing industry. Among them, the electrostatic chuck (ESC) used to fix the wafer in the etching chamber mainly affects the accuracy of the pattern definition of the wafer in the etching process. This component is mainly used to control the surface temperature of the wafer and conduct the heat energy generated by the plasma etching process through the contact point between the wafer and the electrostatic chuck.

[0003] However, we found that the newly installed electrostatic chuck (hereinafter referred to as the new ESC) was less effective than the electrostatic chuck (hereinafter referred to as the old ESC) in the initial use. This is because the surface of the new ESC is rougher than that of the old ESC due to the manufacturing method. Figure 1 As shown in the figure, the roughness (Ra) of the new ESC is about 0.5-0.7, and the roughness (Ra) of the old ESC is <0.2. The high surface roughness causes the contact points between the new ESC and the wafer to be unevenly dispersed, resulting in uneven heat dissipation of the wafer, thus affecting the uniformity of the patterning process.

[0004] Therefore, in order to solve the above problems, it is necessary to provide a method for improving the uneven temperature control of the electrostatic chuck in the etching chamber.

[0005] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because they are described in the background technology section of the present application. Summary of the invention

[0006] The object of the present invention is to provide a method for improving the uneven temperature control of an electrostatic chuck in an etching chamber, so as to solve the uneven temperature control phenomenon caused by the surface condition problem of a new ESC in the related art.

[0007] In order to solve the above problems, a method for improving uneven temperature control of an electrostatic chuck in an etching chamber is provided below, comprising the following steps:

[0008] S1. Providing an etching machine, wherein an etching chamber of the etching machine is provided with a new electrostatic chuck;

[0009] S2, providing a first predetermined number of wafers, transferring one wafer at a time to the electrostatic chuck for fixation, and inputting a first etching gas to clean the etching chamber, wherein the first etching gas is oxygen;

[0010] S3, providing a second predetermined number of wafers, transferring one wafer at a time to the electrostatic chuck for fixation, and inputting a second etching gas for aging treatment, wherein the second etching gas includes a fluorine-containing etching gas;

[0011] S4. Repeat steps S2 and S3 for a predetermined number of times.

[0012] The aging treatment can quickly change the surface state of the new electrostatic chuck, while the cleaning treatment can clean and etch the formed polymer to avoid excessive polymer deposition affecting other components. By cycling the two processes, the electrostatic chuck can be aged quickly without affecting the service life of the etching chamber and the etching effect.

[0013] The cleaning process includes a high-pressure cleaning process and a low-pressure cleaning process; the high-pressure cleaning process includes cleaning the etching chamber using a first plasma formed by ionizing the first etching gas at a first pressure; the low-pressure cleaning process includes cleaning the etching chamber using a first plasma formed by ionizing the first etching gas at a second pressure; the first pressure is greater than the second pressure. In a high chamber pressure environment, it is beneficial to remove residual particles in the upper part of the chamber, and in a low chamber pressure environment, it can effectively remove residual particles in the lower part of the chamber.

[0014] In the high-pressure cleaning process, the first pressure is 200mT, the upper electrode power is 2000W, the lower electrode power is 1500W, the flow rate of the first etching gas is 600sccm, and the chamber temperature is 60° C. In the low-pressure cleaning process, the second pressure is 40mT, the upper electrode power is 2000W, the lower electrode power is 1500W, the flow rate of the first etching gas is 1200sccm, and the chamber temperature is 60° C. Under this process, the cleaning effect and processing efficiency of the etching chamber can be effectively improved.

[0015] The first predetermined number is 1 piece; in the high-pressure cleaning process, the etching time is 120 seconds; in the low-pressure cleaning process, the etching time is 120 seconds.

[0016] The aging treatment includes etching the second plasma formed by ionizing the second etching gas under a third pressure; the third pressure is 25 mT, and the second etching gas is a mixed gas of octafluorocyclobutane, argon and oxygen. The etching gas can have a certain etching effect on the electrostatic chuck to reduce its surface roughness, and can also generate a certain amount of polymer deposited on the surface of the electrostatic chuck, so that the surface state of the electrostatic chuck quickly reaches the expected requirements.

[0017] The flow rate of octafluorocyclobutane is 29 sccm, the flow rate of argon is 750 sccm, the flow rate of oxygen is 47 sccm, the upper electrode power is 3300 W, the lower electrode power is 3800 W, and the chamber temperature is 60° C. Under this process, while meeting the aging requirements of the electrostatic chuck, no obvious damage is caused to other components of the chamber.

[0018] The second predetermined number is 25 pieces; in the aging process, the etching time is 60 seconds.

[0019] In step S2, for each of the first predetermined number of wafers, after the cleaning process, the wafers are transferred out and the first etching gas is input to perform wafer-free cleaning of the etching chamber; in step S3, for each of the second predetermined number of wafers, after the aging process, the wafers are transferred out and the first etching gas is input to perform wafer-free cleaning of the etching chamber. The wafer-free cleaning process can remove residual polymers and ensure the cleanliness of the etching chamber.

[0020] In the waferless cleaning, the chamber pressure is 40 mT, the upper electrode power is 300 W, the lower electrode power is 0 W, the flow rate of the first etching gas is 600 sccm, the chamber temperature is 60° C., and the etching time is 50 seconds. Under this process, the cleaning effect and processing efficiency of the etching chamber can be effectively improved.

[0021] Step S2 and step S3 are repeated for a predetermined number of times until the total processing time is greater than 45 hours. Under this process, after more than 45 hours of cyclic processing, the production demand can be met.

[0022] Compared with the prior art, the beneficial effects of the present invention mainly include the following: through aging treatment, the surface state of the new electrostatic chuck is improved, so that the new electrostatic chuck can quickly meet the expected requirements, solving the problem in the prior art that the uneven dispersion of the contact points between the new ESC and the wafer leads to uneven heat dissipation of the wafer, thereby affecting the uniformity of the patterning process. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the specific embodiments of the present invention, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0024] Figure 1 Schematic diagram of the roughness of the new ESC and the old ESC provided by the present invention.

[0025] Figure 2 A schematic diagram showing the difference in the number of contact points between the new ESC and the old ESC provided by the present invention.

[0026] Figure 3 Schematic diagram of the difference in the degree of polymer deposition between the new ESC and the old ESC provided by the present invention.

[0027] Figure 4 Schematic diagram of the difference in cooling gas He flow efficiency between the new ESC and the old ESC provided by the present invention.

[0028] Figure 5 This is a process flow chart for improving the surface condition of the new ESC provided by the present invention. DETAILED DESCRIPTION

[0029] The above and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of a preferred embodiment with reference to the drawings. The directional terms mentioned in the following embodiments, such as up, down, left, right, front or back, etc., are only referenced to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and not to limit the present invention.

[0030] The following will describe the various embodiments of the present application in detail with reference to the accompanying drawings. However, it will be appreciated by those skilled in the art that in the various embodiments of the present application, many technical details are provided in order to enable the reader to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solution claimed in the present application can be implemented.

[0031] Electrostatic Chuck (ESC) is a device used for precision clamping, which can use electrostatic force to fix objects. It is commonly used in semiconductor manufacturing, optics and microelectronics industries. In dry etching equipment, the electrostatic chuck in the etching chamber has an important influence on the etching process. On the one hand, the electrostatic chuck plays a role in clamping the wafer; on the other hand, it also affects the temperature control of the wafer, that is, the heat energy generated during the plasma etching process is exported through the direct contact between the wafer and the electrostatic chuck, thereby controlling the temperature of the wafer, which in turn affects the accuracy of the wafer's pattern definition in the etching process.

[0032] However, we found during the production process that the newly installed electrostatic chuck (hereinafter referred to as the new ESC) is always prone to uneven heat conduction during initial use compared to the electrostatic chuck normally used on the production line (hereinafter referred to as the old ESC), thus affecting the normal processing of the product. In order to solve the above problem, the inventor studied the main factors and solutions for the uneven heat conduction of the new ESC.

[0033] Figures 2 to 4 Three main factors affecting the thermal conductivity distribution of new and old ESCs are given.

[0034] The first aspect is the contact area between the ESC and the wafer. Figure 2 As shown, the new ESC is limited by the manufacturing method, and its surface is rougher than that of the old ESC. This results in that when the new ESC is used to clamp the wafer, the contact points between the two will be significantly less than when the old ESC is used to clamp the wafer; in addition, the rough peaks on the surface of the new ESC are relatively sharper, while after a long period of use, the sharp rough peaks of the old ESC will gradually become smooth. Therefore, when the new ESC is used to clamp the wafer, it has fewer contact points with the wafer and the contact points are relatively sharp, resulting in the actual contact area being significantly smaller than when the old ESC is used to clamp the wafer. We know that the heat generated during plasma etching is conducted through direct contact between the wafer and the electrostatic chuck. When the actual contact area between the two is reduced, the overall thermal conductivity efficiency decreases and it is more likely to produce uneven thermal conductivity.

[0035] The second aspect is the influence of polymer deposition on the ESC surface. Figure 3 As shown, we know that in the dry etching process, due to the use of fluorine-containing etching gas, a certain amount of polymer is usually produced during the etching process. After a long period of use, the surface of the old ESC usually has a layer of polymer deposited on it, while the surface of the new ESC naturally does not have polymer deposition. The difference in polymers on the surface of the ESC will also bring different effects. The polymer of the old ESC can further improve the contact area between the ESC and the wafer, thereby providing a better heat transfer effect to ensure uniform temperature distribution in various areas on the wafer.

[0036] The third aspect is the effect of differences in the efficiency of the cooling gas He flow. Figure 4 As shown, we know that back helium is usually used for cooling on ESC to quickly remove heat. For old ESCs, the surface roughness is lower and there are polymers on the surface. The actual contact area between ESC and wafer is larger, that is, the contact between the two is closer and more reliable, because there is less He leakage; while the contact between new ESC and wafer is relatively poor, which is more prone to He leakage. The more He leakage, the lower the cooling efficiency, and the greater the temperature difference between the area with He leakage and the normal cooling area, which leads to uneven temperature control.

[0037] In order to solve the above problems, the inventor proposes to perform process treatment on the new ESC so that the surface state of the new ESC meets the expected requirements.

[0038] The steps in the following embodiments do not correspond one to one with the summary of the invention.

[0039] Embodiment 1

[0040] The present invention provides a method for improving uneven temperature control of an electrostatic chuck in an etching chamber, comprising the following steps:

[0041] Step 1: Provide an etching machine, and install a new ESC in the etching chamber of the machine.

[0042] First, a new ESC is provided and installed in the etching chamber of an etching machine. In this embodiment, the etching machine is a SCCM etching machine of TOKYO ELECTRON LTD (TEL), and the main body of the new ESC is Al2O3 and the surface layer is SiO2.

[0043] Since the surface roughness of the new ESC is relatively high, its surface roughness Ra is about 0.5-0.7, in order to make its surface state meet the expected requirements. We have two different paths. The first is to polish the surface of the new ESC by grinding and polishing equipment. This method can reduce its surface roughness to a certain extent, but it usually cannot meet the expected requirements. Therefore, there is a second solution, which is to use an etching process to process the new ESC. In this embodiment, the new ESC provided is first polished and then installed in the etching machine. It should be noted that the polishing step is not necessary.

[0044] Step 2: Provide a first predetermined number of wafers, transfer one wafer at a time to the electrostatic chuck for fixation, and clean the etching chamber.

[0045] In this embodiment, a wafer is first transferred to the electrostatic chuck in the etching chamber (it can be understood that the electrostatic chuck mentioned here and in the following is the new ESC installed in step 1), and a voltage is applied to the electrostatic chuck to adsorb the wafer on the electrostatic chuck for fixation; then, the etching chamber is cleaned (DryClean) with the wafer. The cleaning process includes two stages, namely high-pressure cleaning and low-pressure cleaning.

[0046] First, a high-pressure cleaning process is performed, that is, a first etching gas is input, and a first plasma formed by ionizing the first etching gas is used to clean the etching chamber at a first pressure; then, a low-pressure cleaning process is performed, that is, the first etching gas is continued to be input, and a first plasma formed by ionizing the first etching gas is used to clean the etching chamber at a second pressure; wherein the first pressure is greater than the second pressure, that is, the first pressure is a high pressure and the second pressure is a low pressure; in this embodiment, the first etching gas is oxygen (O2).

[0047] Specifically, in this embodiment, the specific process parameters in the high-pressure cleaning process are as follows: the chamber pressure, that is, the first pressure, is 200mT (i.e., millitorr, the same below); the etching power, that is, the first power, is: upper electrode power 2000W, lower electrode power 1500W; the etching gas, that is, the first etching gas, is oxygen; the etching gas flow rate, that is, the first flow rate, is 600sccm (standard cubic centimeters per minute, the same below); the chamber temperature is 60°C; the etching time, that is, the first etching time, is 120 seconds; the hydrogen pressure, that is, the first hydrogen pressure, is: edge hydrogen pressure 20T, center hydrogen pressure 40T.

[0048] After the high-pressure cleaning process is completed, the low-pressure cleaning process is continued. In this embodiment, the specific process parameters in the low-pressure cleaning process are as follows: the chamber pressure, i.e., the second pressure, is 40 mT; the etching power, i.e., the first power, is: the upper electrode power is 2000 W, the lower electrode power is 1500 W; the etching gas, i.e., the first etching gas, is oxygen; the etching gas flow, i.e., the second flow, is 1200 sccm; the chamber temperature is 60°C; the etching time, i.e., the first etching time, is 120 seconds; the hydrogen pressure, i.e., the first hydrogen pressure, is: the edge hydrogen pressure is 20 T, the center hydrogen pressure is 40 T.

[0049] In this embodiment, the above cleaning process is divided into two parts: high-pressure cleaning process and low-pressure cleaning process. This is because when the cavity pressure is high, the upper part of the etching cavity has a better cleaning effect; when the cavity pressure is low, the lower part of the etching cavity has a better cleaning effect. In this way, the entire etching cavity can be cleaned through two stages of cleaning process. The cleaning process can remove the residual polymer in the cavity and avoid excessive polymer residue.

[0050] In this embodiment, when the cleaning process is completed, the wafer on the electrostatic chuck will be removed. After the wafer is removed, a wafer-less cleaning (Wafer Less Dry Clean) will be performed. In this embodiment, the specific process parameters in the wafer-less cleaning process are as follows: the chamber pressure, i.e., the second pressure, is 40mT; the etching power, i.e., the second power, is: the upper electrode power is 300W, the lower electrode power is 0W; the etching gas, i.e., the first etching gas, is oxygen; the etching gas flow, i.e., the first flow, is 600sccm; the chamber temperature is 60°C; the etching time, i.e., the second etching time, is 50 seconds.

[0051] In the present embodiment, the first predetermined number of wafers is 1, and the wafer used is a warm-up wafer (season), that is, a wafer is transferred and fixed on the electrostatic chuck and subjected to high-pressure cleaning treatment and low-pressure cleaning treatment in sequence. In other embodiments, according to actual needs, the above steps can also be repeated, that is, when the first predetermined number is greater than 1 wafer, the first predetermined number of wafers are respectively subjected to the above-mentioned transfer, fixation and cleaning treatment. For example, when the first predetermined number is 2, the first wafer is transferred and fixed on the electrostatic chuck, and then it is transferred out after cleaning treatment; thereafter, the second wafer is transferred and fixed on the electrostatic chuck, and then it is transferred out after cleaning treatment. It can be understood that after each wafer is taken out, a wafer-less dry clean (Wafer Less Dry Clean) will be performed first.

[0052] Step 3: Provide a second predetermined number of wafers, transfer one wafer at a time to the electrostatic chuck for fixation, and perform aging treatment.

[0053] In this embodiment, the second predetermined number of wafers is 25, and the wafers used are warm-up wafers (season). Specifically, first transfer the first wafer to the electrostatic chuck in the etching chamber, apply voltage to the electrostatic chuck so that the wafer is adsorbed on the electrostatic chuck for fixation; then perform aging treatment (Aging) with the wafer; after the aging treatment is completed, transfer the wafer and perform a wafer-less dry clean (Wafer Less Dry Clean); transfer, fix and age the second wafer again; repeat the above process until all 25 wafers have completed the corresponding operation. It can be understood that after each wafer is taken out, a wafer-less dry clean (Wafer Less Dry Clean) will be performed first.

[0054] The aging treatment is as follows: firstly, a second etching gas is input, and at a third pressure, an aging treatment is performed using a second plasma formed by ionization of the second etching gas; in this embodiment, the second etching gas is a mixed gas of octafluorocyclobutane (C4F8), argon (Ar) and oxygen (O2). In other embodiments, the second etching gas includes an etching gas containing fluorine elements.

[0055] Specifically, in this embodiment, the specific process parameters during the aging treatment are as follows: the chamber pressure, i.e., the third pressure, is 25mT; the etching power, i.e., the third power, is: upper electrode power 3300W, lower electrode power 3800W; the etching gas, i.e., the second etching gas, is a mixture of octafluorocyclobutane (C4F8), argon (Ar) and oxygen (O2), wherein the flow rate of octafluorocyclobutane (C4F8) is 29sccm, the flow rate of argon (Ar) is 750sccm, and the flow rate of oxygen (O2) is 47sccm; the chamber temperature is 60°C; the etching time, i.e., the third etching time, is 60 seconds; the hydrogen pressure, i.e., the second hydrogen pressure, is: edge hydrogen pressure 10T, center hydrogen pressure 10T.

[0056] In this embodiment, the above-mentioned process parameters are selectively used. The etching process parameters can be used to quickly age the electrostatic chuck so that its surface state meets our expected requirements, and will not cause excessive damage to the various components in the etching chamber, thereby affecting the service life and use effect of the etching equipment. In the above process parameters, C4F8 is used as an etching gas, which is more suitable for etching materials such as silicon oxide and silicon nitride (the main body of the electrostatic chuck is Al2O3 and the surface layer is SiO2). It can play a certain etching role on the surface of the electrostatic chuck, thereby reducing its surface roughness; in addition, during the etching process, the etching gas will produce a certain amount of polymer deposited on the surface of the electrostatic chuck, further improving its surface state; in addition, during the etching process, the heat generated by the etching process will cause the wafer to expand radially outward. Under the expansion of the wafer and the clamping action of the electrostatic chuck, a force will be generated on the wafer and the contact surface with the electrostatic chuck. This process can also accelerate the aging of the electrostatic chuck, so that its surface state can meet the expected requirements faster; of course, the aging treatment with the wafer can also prevent the electrostatic chuck from being excessively damaged.

[0057] Similarly, in this embodiment, when the aging treatment procedure is completed, the wafer on the electrostatic chuck will be taken out. After the wafer is taken out, a wafer-less cleaning (Wafer Less Dry Clean) will be performed. In this embodiment, the specific process parameters in the wafer-less cleaning process are as follows: the chamber pressure, i.e., the second pressure, is 40mT; the etching power, i.e., the second power, is: the upper electrode power is 300W, the lower electrode power is 0W; the etching gas, i.e., the first etching gas, is oxygen; the etching gas flow, i.e., the first flow, is 600sccm; the chamber temperature is 60°C; the etching time, i.e., the second etching time, is 50 seconds.

[0058] In this embodiment, the second predetermined number of wafers is 25, and the wafers used are season wafers, that is, a wafer is transferred and aging is performed. In other embodiments, according to actual needs, the second predetermined number can also be other values, such as 10 wafers, 15 wafers, 20 wafers, or 30 wafers. It can be understood that no matter how many wafers there are in the second predetermined number, after each wafer is taken out, a wafer-less dry clean can be performed before subsequent process processing.

[0059] Step 4: Repeat steps 2 and 3 for a predetermined number of times until the surface state of the electrostatic chuck meets the expected requirements.

[0060] In step 2, a first predetermined number of wafers (one in this embodiment) are used for cleaning; in step 3, a second predetermined number of wafers (25 in this embodiment) are used for aging. After that, the above steps 2 and 3 are repeated for a certain number of times, that is, the first predetermined number of wafers are provided again and cleaned, and then the second predetermined number of wafers are provided and aged, and this is repeated for a certain number of times; after each wafer is taken out, a wafer-free cleaning is performed first.

[0061] In this embodiment, by repeating the above-mentioned treatment until the total treatment time exceeds 45 hours, tests have shown that the surface state of the electrostatic chuck (i.e., the surface roughness Ra is reduced from 0.5-0.7 to below 0.2 and the surface is covered with an appropriate amount of polymer) can meet the expected requirements and can be used in subsequent normal production.

[0062] In order to facilitate the description, some common English nouns or letters used in the present invention are only used for exemplary reference rather than restrictive interpretation or specific usage, and the protection scope of the present invention should not be limited by their possible Chinese translations or specific letters.

[0063] It should also be noted that, in this document, relational terms such as "first" and "second" are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations.

Claims

1. A method for improving uneven temperature control of an electrostatic chuck in an etching chamber, characterized in that: The steps include: S1. Providing an etching machine, wherein an etching chamber of the etching machine is provided with a new electrostatic chuck; S2, providing a first predetermined number of wafers, transferring one wafer at a time to the electrostatic chuck for fixation, and inputting a first etching gas to clean the etching chamber, wherein the first etching gas is oxygen; S3, providing a second predetermined number of wafers, transferring one wafer at a time to the electrostatic chuck for fixation, and inputting a second etching gas for aging treatment, wherein the second etching gas includes a fluorine-containing etching gas; S4. Repeat steps S2 and S3 for a predetermined number of times.

2. A method for improving uneven temperature control of an electrostatic chuck in an etching chamber according to claim 1, characterized in that: The cleaning process includes a high-pressure cleaning process and a low-pressure cleaning process; the high-pressure cleaning process includes cleaning the etching chamber by using a first plasma formed by ionizing the first etching gas at a first pressure; the low-pressure cleaning process includes cleaning the etching chamber by using a first plasma formed by ionizing the first etching gas at a second pressure; the first pressure is greater than the second pressure.

3. A method for improving uneven temperature control of an electrostatic chuck in an etching chamber according to claim 2, characterized in that: In the high-pressure cleaning process, the first pressure is 200 mT, the upper electrode power is 2000 W, the lower electrode power is 1500 W, the flow rate of the first etching gas is 600 sccm, and the chamber temperature is 60° C.; In the low-pressure cleaning process, the second pressure is 40 mT, the upper electrode power is 2000 W, the lower electrode power is 1500 W, the flow rate of the first etching gas is 1200 sccm, and the chamber temperature is 60°C.

4. A method for improving uneven temperature control of an electrostatic chuck in an etching chamber according to claim 3, characterized in that: The first predetermined number is 1 piece; in the high-pressure cleaning process, the etching time is 120 seconds; in the low-pressure cleaning process, the etching time is 120 seconds.

5. The method for improving uneven temperature control of an electrostatic chuck in an etching chamber according to claim 1, characterized in that: The aging treatment includes performing an etching treatment under a third pressure using a second plasma formed by ionizing the second etching gas; the third pressure is 25 mT, and the second etching gas is a mixed gas of octafluorocyclobutane, argon and oxygen.

6. A method for improving uneven temperature control of an electrostatic chuck in an etching chamber according to claim 5, characterized in that: During the aging treatment, the flow rate of octafluorocyclobutane was 29 sccm, the flow rate of argon was 750 sccm, the flow rate of oxygen was 47 sccm, the upper electrode power was 3300 W, the lower electrode power was 3800 W, and the chamber temperature was 60°C.

7. A method for improving uneven temperature control of an electrostatic chuck in an etching chamber according to claim 6, characterized in that: The second predetermined number is 25 pieces; in the aging process, the etching time is 60 seconds.

8. A method for improving uneven temperature control of an electrostatic chuck in an etching chamber according to claims 4 and 7, characterized in that: In step S2, for each of the first predetermined number of wafers, after the cleaning process, the wafers are taken out and the first etching gas is introduced to perform wafer-free cleaning of the etching chamber; In step S3, for each of the second predetermined number of wafers, after the aging treatment, the wafers are taken out and the first etching gas is introduced to perform wafer-free cleaning of the etching chamber.

9. A method for improving uneven temperature control of an electrostatic chuck in an etching chamber according to claim 8, characterized in that: In the wafer-free cleaning, the chamber pressure is 40 mT, the upper electrode power is 300 W, the lower electrode power is 0 W, the flow rate of the first etching gas is 600 sccm, the chamber temperature is 60° C., and the etching time is 50 seconds.

10. A method for improving uneven temperature control of an electrostatic chuck in an etching chamber according to claim 9, characterized in that: Step S2 and step S3 are repeatedly performed for a predetermined number of times until the total processing time is greater than 45 hours.

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