Photovoltaic glass, preparation method thereof and photovoltaic module

Abstract

The invention discloses photovoltaic glass, a preparation method thereof and a photovoltaic module, and relates to the technical field of photovoltaic glass, the photovoltaic glass comprises a glass substrate and an antireflection film arranged on one side face of the glass substrate, and the antireflection film comprises an interference film stack and a nano-porous layer which are sequentially arranged on the glass substrate; wherein the interference film stack comprises high-refractive-index film layers and low-refractive-index film layers, the high-refractive-index film layers and the low-refractive-index film layers are alternately arranged in the direction away from the glass substrate, and the porous structure of the nano-porous layer is a surface closed-pore structure. According to the technical scheme provided by the invention, the reflectivity of the photovoltaic glass can be reduced, and the wear resistance and weather resistance of the photovoltaic glass can also be considered, so that the power generation performance of the photovoltaic module is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of photovoltaic glass, and in particular to photovoltaic glass and a preparation method thereof, and a photovoltaic module. Background Art

[0002] In solar photovoltaic power generation, the power generation performance of photovoltaic modules can be improved by reducing the reflection loss of sunlight by photovoltaic glass. In the prior art, the reflectivity of glass is usually reduced by coating. However, the reflectivity of photovoltaic glass still needs to be further reduced. The wear resistance and weather resistance of photovoltaic glass will also affect the power generation performance of photovoltaic modules. Summary of the invention

[0003] The main purpose of the present invention is to propose a photovoltaic glass and a preparation method thereof, as well as a photovoltaic module, aiming to solve the problem that the reflectivity of the current photovoltaic glass still needs to be further reduced, and the wear resistance and weather resistance of the photovoltaic glass will also affect the power generation performance of the photovoltaic module.

[0004] To achieve the above-mentioned purpose, the photovoltaic glass proposed in the present invention includes a glass substrate and an anti-reflection film arranged on one side of the glass substrate, wherein the anti-reflection film includes an interference film stack and a nanoporous layer arranged in sequence on the glass substrate; wherein the interference film stack includes high refractive index film layers and low refractive index film layers alternately arranged in a direction away from the glass substrate, and the porous structure of the nanoporous layer is a surface closed-pore structure.

[0005] In one embodiment, the difference in expansion coefficient between the glass substrate and the adjacent film layer is less than or equal to 5×10 -6 / K; and / or,

[0006] In the interference film stack, the difference in expansion coefficient between any two adjacent film layers is less than or equal to 8×10 -6 / K.

[0007] In one embodiment, the thickness of the nanoporous layer is 50 nm to 200 nm; and / or,

[0008] The pore size of the nanoporous layer is 10 nm to 80 nm; and / or,

[0009] The refractive index of the nanoporous layer at a wavelength of 550 nm is 1.28 to 1.32; and / or,

[0010] The nanoporous layer comprises any one of aluminum oxide, silicon dioxide, titanium dioxide, zinc oxide and tin dioxide.

[0011] In one embodiment, the number of film layers of the interference film stack is less than or equal to 8; and / or,

[0012] The thickness of the interference film stack is less than or equal to 350 nm.

[0013] In one embodiment, in the interference film stack, the refractive index of the high refractive index film layer at a wavelength of 550nm is 1.8 to 2.5; and / or,

[0014] In the interference film stack, the refractive index of the low refractive index film layer at a wavelength of 550nm is 1.4 to 2.2.

[0015] In one embodiment, in the interference film stack, the extinction coefficient of each film layer in the 450nm to 2500nm band is less than or equal to 0.2.

[0016] In one embodiment, in the interference film stack, the component of the high refractive index film layer includes at least one of a first oxide and a first nitride; and / or,

[0017] In the interference film stack, the component of the low refractive index film layer includes at least one of a second oxide and a second nitride.

[0018] In one embodiment, the glass substrate comprises at least one of ultra-clear rolled glass and ultra-clear float glass; and / or,

[0019] The light transmittance of the glass substrate is greater than or equal to 90%; and / or,

[0020] The thickness of the glass substrate is 1.6 mm to 4.0 mm.

[0021] In one embodiment, the average reflectivity of the photovoltaic glass at near-normal incidence in the wavelength range of 380 nm to 1100 nm is less than or equal to 1%.

[0022] The present invention also provides a method for preparing the above photovoltaic glass, comprising the following steps:

[0023] Through film system design, the film layer structure of the optimized interference film stack is obtained;

[0024] On a glass substrate, a high refractive index film layer and a low refractive index film layer are alternately prepared by vacuum coating method to form a film layer structure of an optimized interference film stack;

[0025] On the interference film stack, a coating is prepared by a sol-gel method, and a curing treatment is performed to obtain a nanoporous layer, which is then tempered to obtain photovoltaic glass.

[0026] In one embodiment, in the step of preparing a coating on an interference film stack by a sol-gel method, performing a curing treatment to obtain a nanoporous layer, and then performing a tempering treatment to obtain a photovoltaic glass:

[0027] The curing temperature is 100°C to 300°C; and / or,

[0028] The temperature of the tempering treatment is 600°C to 700°C.

[0029] The present invention also provides a photovoltaic module, comprising the photovoltaic glass mentioned above, or photovoltaic glass made by the method for making the photovoltaic glass mentioned above.

[0030] In the technical solution provided by the present invention, an interference film stack and a nanoporous layer are sequentially arranged on one side of the glass substrate. The interference film stack can reduce the reflection of light by alternating high refractive index film layers and low refractive index film layers. The porous structure of the nanoporous layer is a surface closed-pore structure. The nanoporous layer cooperates with the interference film stack to further reduce the reflectivity of the photovoltaic glass, and can also take into account the wear resistance and weather resistance of the photovoltaic glass, thereby improving the power generation performance of the photovoltaic module; in addition, the interference film stack can be prepared by vacuum coating, and the nanoporous layer can be prepared by a sol-gel method, thereby realizing the continuous production of large-area photovoltaic glass and shortening the production cycle. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0032] Figure 1 A schematic structural diagram of an embodiment of the photovoltaic glass provided by the present invention;

[0033] Figure 2 A scanning electron microscope image of an embodiment of the nanoporous layer provided by the present invention;

[0034] Figure 3 This is a reflectivity spectrum diagram of the photovoltaic glass of Example 1 of the present invention;

[0035] Figure 4 This is a reflectivity spectrum diagram of the photovoltaic glass of Example 2 of the present invention;

[0036] Figure 5 This is a reflectivity spectrum diagram of the photovoltaic glass of Example 3 of the present invention;

[0037] Figure 6 This is a reflectivity spectrum diagram of the photovoltaic glass of Example 4 of the present invention;

[0038] Figure 7 This is a reflectivity spectrum diagram of the photovoltaic glass of Example 5 of the present invention;

[0039] Figure 8 This is a reflectivity spectrum diagram of the photovoltaic glass of Example 6 of the present invention;

[0040] Fig. 9 This is a reflectivity spectrum diagram of the photovoltaic glass of Comparative Example 1 of the present invention.

[0041] Description of reference numerals:

[0042] 100. Photovoltaic glass; 1. Glass substrate; 2. Interference film stack; 21. High refractive index film layer; 22. Low refractive index film layer; 3. Nanoporous layer.

[0043] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0044] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0045] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0046] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features limited to "first" and "second" may explicitly or implicitly include at least one of the features. In addition, if "and / or" or "and / or" appears in the full text, its meaning includes three parallel solutions. Taking "A and / or B" as an example, it includes solution A, solution B, or solutions that satisfy both A and B. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0047] In solar photovoltaic power generation, the power generation performance of photovoltaic modules can be improved by reducing the reflection loss of sunlight by photovoltaic glass. In the prior art, the reflectivity of glass is usually reduced by coating. However, the reflectivity of photovoltaic glass still needs to be further reduced. The wear resistance and weather resistance of photovoltaic glass will also affect the power generation performance of photovoltaic modules.

[0048] In view of this, the present invention proposes a photovoltaic glass 100 and a preparation method thereof, as well as a photovoltaic module, which can reduce the reflectivity of the photovoltaic glass 100 and also take into account the wear resistance and weather resistance of the photovoltaic glass 100, thereby improving the power generation performance of the photovoltaic module. Figures 1 to 9 This is an embodiment of the photovoltaic glass 100 provided by the present invention.

[0049] See also Figure 1 and Figure 2 In an embodiment of the present invention, the photovoltaic glass 100 includes a glass substrate 1 and an anti-reflection film arranged on one side of the glass substrate 1, and the anti-reflection film includes an interference film stack 2 and a nanoporous layer 3 arranged in sequence on the glass substrate 1; wherein the interference film stack 2 includes a high refractive index film layer 21 and a low refractive index film layer 22 alternately arranged in a direction away from the glass substrate 1, and the porous structure of the nanoporous layer 3 is a surface closed-pore structure.

[0050] In the technical solution provided by the present invention, an interference film stack 2 and a nanoporous layer 3 are sequentially arranged on one side of the glass substrate 1. The interference film stack 2 can reduce the reflection of light by alternating high refractive index film layers 21 and low refractive index film layers 22. The porous structure of the nanoporous layer 3 is a surface closed-pore structure. The nanoporous layer 3 cooperates with the interference film stack 2 to further reduce the reflectivity of the photovoltaic glass 100, and can also take into account the wear resistance and weather resistance of the photovoltaic glass 100, thereby improving the power generation performance of the photovoltaic module; in addition, the interference film stack 2 can be prepared by vacuum coating, and the nanoporous layer 3 can be prepared by a sol-gel method, thereby realizing the continuous production of large-area photovoltaic glass 100 and shortening the production cycle.

[0051] It can be understood that high refractive index and low refractive index are relative probabilities, and the refractive index of the high refractive index film layer 21 in the interference film stack 2 is higher than the refractive index of the low refractive index film layer 22; the film layer of the interference film stack 2 close to the nanoporous layer 3 can be a high refractive index film layer 21 or a low refractive index film layer 22.

[0052] It should be noted that the photovoltaic glass 100 is used as a cover plate of a photovoltaic module. The incident medium of the photovoltaic glass 100 is air with a refractive index of 1. The output medium is a film (EVA, POE, PVB, etc.) with a refractive index of 1.45 to 1.6 at a wavelength of 550 nm, which is not much different from the refractive index of the glass substrate 1. If an anti-reflection film is provided at the output, the reflection will increase and the light entering the cell will be reduced. Therefore, the present invention provides an anti-reflection film on one side of the glass substrate 1 for single-sided anti-reflection.

[0053] In the embodiment of the present invention, the difference in expansion coefficient between the glass substrate 1 and the adjacent film layer is less than or equal to 5×10 -6 / K. The difference in expansion coefficient between the glass substrate 1 and the adjacent film layer is within the above range, the structure of the photovoltaic glass 100 is more stable, and the weather resistance of the photovoltaic glass 100 can be improved. The difference in expansion coefficient between the glass substrate 1 and the adjacent film layer can be 5×10 -6 / K, 4×10 -6 / K, 3×10 -6 / K, 2×10 -6 / K, 1×10 -6 / K, 5×10 -7 / K or 5×10 -8 / K.

[0054] In the embodiment of the present invention, the difference in expansion coefficients of any two adjacent film layers in the interference film stack 2 is less than or equal to 8×10 -6 / K. In the interference film stack 2, the difference in expansion coefficients of any two adjacent film layers is within the above range, the structure of the photovoltaic glass 100 is more stable, and the weather resistance of the photovoltaic glass 100 can be improved. In the interference film stack 2, the difference in expansion coefficients of any two adjacent film layers can be 8×10 -6 / K, 7×10 -6 / K, 6×10 -6 / K, 5×10 -6 / K, 4×10 -6 / K, 3×10 -6 / K, 2×10 -6 / K, 1×10 -6 / K, 8×10 -7 / K or 8×10 -8 / K.

[0055] In an embodiment of the present invention, the thickness of the nanoporous layer 3 is 50 nm to 200 nm. The thickness of the nanoporous layer 3 is within the above range, which is beneficial to reducing the reflectivity of the photovoltaic glass 100. The thickness of the nanoporous layer 3 can be 50 nm, 60 nm, 80 nm, 100 nm, 120 nm, 150 nm or 200 nm.

[0056] In an embodiment of the present invention, the pore size of the nanoporous layer 3 is 10 nm to 80 nm. The pore size of the nanoporous layer 3 is within the above range, which can make the refractive index of the nanoporous layer 3 within a suitable range, which is beneficial to reduce the reflectivity of the photovoltaic glass 100, and is also beneficial to improve the wear resistance and weather resistance of the photovoltaic glass 100. The pore size of the nanoporous layer 3 can be 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm or 80 nm.

[0057] In an embodiment of the present invention, the refractive index of the nanoporous layer 3 at a wavelength of 550 nm is 1.28 to 1.32. The refractive index of the nanoporous layer 3 at a wavelength of 550 nm is within the above range, which is beneficial to reducing the reflectivity of the photovoltaic glass 100 and also beneficial to improving the wear resistance and weather resistance of the photovoltaic glass 100. The refractive index of the nanoporous layer 3 at a wavelength of 550 nm may be 1.28, 1.29, 1.30, 1.31 or 1.32.

[0058] In an embodiment of the present invention, the composition of the nanoporous layer 3 includes any one of aluminum oxide, silicon dioxide, titanium dioxide, zinc oxide and tin dioxide. The nanoporous layer 3 adopts the above composition, which is beneficial to reducing the reflectivity of the photovoltaic glass 100 and also beneficial to improving the wear resistance and weather resistance of the photovoltaic glass 100.

[0059] In an embodiment of the present invention, the number of film layers of the interference film stack 2 is less than or equal to 8. The number of film layers of the interference film stack 2 is within the above range, which is conducive to simplifying the structure of the photovoltaic glass 100. The number of film layers of the interference film stack 2 can be 2 layers, 3 layers, 4 layers, 5 layers, 6 layers, 7 layers or 8 layers.

[0060] In an embodiment of the present invention, the thickness of the interference film stack 2 is less than or equal to 350 nm. The thickness of the interference film stack 2 is within the above range, which is conducive to reducing production costs. The thickness of the interference film stack 2 can be 350 nm, 300 nm, 250 nm or 200 nm.

[0061] In an embodiment of the present invention, in the interference film stack 2, the refractive index of the high refractive index film layer 21 at a wavelength of 550nm is 1.8 to 2.5. In the interference film stack 2, the refractive index of the high refractive index film layer 21 at a wavelength of 550nm is within the above range, which is beneficial to reduce the reflectivity of the photovoltaic glass 100. In the interference film stack 2, the refractive index of the high refractive index film layer 21 at a wavelength of 550nm can be 1.8, 1.9, 2.0, 2.1, 2.2, 2.3, 2.4 or 2.5.

[0062] In an embodiment of the present invention, in the interference film stack 2, the refractive index of the low refractive index film layer 22 at a wavelength of 550nm is 1.4 to 2.2. In the interference film stack 2, the refractive index of the low refractive index film layer 22 at a wavelength of 550nm is within the above range, which is beneficial to reduce the reflectivity of the photovoltaic glass 100. In the interference film stack 2, the refractive index of the low refractive index film layer 22 at a wavelength of 550nm can be 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2.0, 2.1 or 2.2.

[0063] In an embodiment of the present invention, in the interference film stack 2, the extinction coefficient of each film layer in the 450nm-2500nm band is less than or equal to 0.2. In the interference film stack 2, the extinction coefficient of each film layer in the 450nm-2500nm band is within the above range, and the absorption rate of the interference film stack 2 is low, which can improve the light transmittance of the photovoltaic glass 100. In the interference film stack 2, the extinction coefficient of each film layer in the 450nm-2500nm band can be 0.2, 0.18, 0.15, 0.12, 0.10 or 0.08.

[0064] In an embodiment of the present invention, in the interference film stack 2, the component of the high refractive index film layer 21 includes at least one of the first oxide and the first nitride. In the interference film stack 2, the high refractive index film layer 21 adopts the above components, which is beneficial to improve the wear resistance and weather resistance of the photovoltaic glass 100. In the interference film stack 2, the component of the high refractive index film layer 21 can be any one of the first oxide and the first nitride or any combination of multiple thereof.

[0065] In an embodiment of the present invention, in the interference film stack 2, the composition of the low refractive index film layer 22 includes at least one of a second oxide and a second nitride. In the interference film stack 2, the low refractive index film layer 22 uses the above composition, which is beneficial to improving the wear resistance and weather resistance of the photovoltaic glass 100. In the interference film stack 2, the composition of the low refractive index film layer 22 can be any one of the second oxide and the second nitride or any combination of multiple thereof.

[0066] In an embodiment of the present invention, the interference film stack 2 has three film layers. In the direction away from the glass substrate 1, the first and third layers are high refractive index film layers 21, and the second layer is a low refractive index film layer 22; wherein the high refractive index film layer 21 is an yttrium oxide film layer, and the low refractive index film layer 22 is a silicon dioxide film layer. The use of the above-mentioned interference film stack 2 can reduce the reflectivity of the photovoltaic glass 100, and the structure of the photovoltaic glass 100 is simple, which can reduce the production cost. Further, in an embodiment of the present invention, in the interference film stack 2, the thickness of the film layers of the first to third layers are 120nm~180nm, 20nm~40nm and 20nm~40nm respectively. The thickness of each film layer of the interference film stack 2 corresponds to the above range, which is beneficial to reduce the reflectivity of the photovoltaic glass 100 and also beneficial to reduce the production cost. In the interference film stack 2, the thickness of the film layers from the first layer to the third layer may be 120nm, 20nm and 20nm, 150nm, 30nm and 30nm, 150nm, 20nm and 40nm, or 180nm, 40nm and 40nm, respectively. It is understood that the refractive index of the yttrium oxide film layer at a wavelength of 550nm may be 1.81, and the refractive index of the silicon dioxide film layer at a wavelength of 550nm may be 1.46.

[0067] In an embodiment of the present invention, the interference film stack 2 has 4 film layers. In the direction away from the glass substrate 1, the 1st and 3rd layers are high refractive index film layers 21, and the 2nd and 4th layers are low refractive index film layers 22; wherein, the high refractive index film layer 21 is a niobium trioxide film layer, and the low refractive index film layer 22 is a silicon dioxide film layer. The use of the above-mentioned interference film stack 2 can reduce the reflectivity of the photovoltaic glass 100, and the structure of the photovoltaic glass 100 is also relatively simple, which can reduce the production cost. Further, in an embodiment of the present invention, in the interference film stack 2, the thickness of the film layers from the 1st layer to the 4th layer are 3nm~7nm, 70nm~130nm, 5nm~15nm and 90nm~150nm respectively. The thickness of each film layer of the interference film stack 2 corresponds to the above range, which is beneficial to reduce the reflectivity of the photovoltaic glass 100 and also beneficial to reduce the production cost. In the interference film stack 2, the thickness of the film layers from the first layer to the fourth layer may be 3 nm, 70 nm, 5 nm and 90 nm, 5 nm, 100 nm, 10 nm and 120 nm, or 7 nm, 130 nm, 15 nm and 150 nm, respectively. It is understood that the refractive index of the niobium oxide film layer at a wavelength of 550 nm may be 2.32, and the refractive index of the silicon dioxide film layer at a wavelength of 550 nm may be 1.46.

[0068] In an embodiment of the present invention, the interference film stack 2 has 5 film layers. In the direction away from the glass substrate 1, the 1st, 3rd and 5th layers are high refractive index film layers 21, and the 2nd and 4th layers are low refractive index film layers 22; wherein the high refractive index film layer 21 is a niobium trioxide film layer, and the low refractive index film layer 22 is a silicon dioxide film layer. The above-mentioned interference film stack 2 can reduce the reflectivity of the photovoltaic glass 100, and the structure of the photovoltaic glass 100 is also relatively simple, which can reduce the production cost. Further, in an embodiment of the present invention, in the interference film stack 2, the thickness of the film layers from the 1st layer to the 5th layer is 5nm to 15nm, 50nm to 110nm, 5nm to 15nm, 70nm to 130nm and 3nm to 7nm, respectively. The thickness of each film layer of the interference film stack 2 is correspondingly within the above range, which is beneficial to reduce the reflectivity of the photovoltaic glass 100 and also beneficial to reduce the production cost. In the interference film stack 2, the thickness of the film layers from the first layer to the fifth layer may be 5nm, 50nm, 5nm, 70nm and 3nm, 10nm, 80nm, 10nm, 100nm and 5nm, or 15nm, 110nm, 15nm, 130nm and 7nm. It is understood that the refractive index of the niobium oxide film layer at a wavelength of 550nm may be 2.32, and the refractive index of the silicon dioxide film layer at a wavelength of 550nm may be 1.46.

[0069] In an embodiment of the present invention, the number of film layers of the interference film stack 2 is 6 layers. In the direction away from the glass substrate 1, the 1st layer, the 3rd layer and the 5th layer are high refractive index film layers 21, and the 2nd layer, the 4th layer and the 6th layer are low refractive index film layers 22; wherein, the high refractive index film layer 21 is a niobium trioxide film layer, and the low refractive index film layer 22 is a silicon dioxide film layer. The above-mentioned interference film stack 2 can reduce the reflectivity of the photovoltaic glass 100, and the structure of the photovoltaic glass 100 is also relatively simple, which can reduce the production cost. Further, in an embodiment of the present invention, in the interference film stack 2, the thickness of the film layers from the 1st layer to the 6th layer is 3nm~7nm, 60nm~100nm, 5nm~15nm, 70nm~130nm, 3nm~7nm and 3nm~7nm respectively. The thickness of each film layer of the interference film stack 2 is correspondingly in the above range, which is beneficial to reduce the reflectivity of the photovoltaic glass 100 and also beneficial to reduce the production cost. In the interference film stack 2, the thickness of the film layers from the first layer to the sixth layer may be 3nm, 60nm, 5nm, 70nm, 3nm and 3nm, 5nm, 80nm, 10nm, 100nm, 5nm and 5nm, or 7nm, 100nm, 15nm, 130nm, 7nm and 7nm. It is understood that the refractive index of the niobium oxide film layer at a wavelength of 550nm may be 2.32, and the refractive index of the silicon dioxide film layer at a wavelength of 550nm may be 1.46.

[0070] In an embodiment of the present invention, the interference film stack 2 has 7 film layers. In the direction away from the glass substrate 1, the 1st, 3rd, 5th and 7th layers are high refractive index film layers 21, and the 2nd, 4th and 6th layers are low refractive index film layers 22; wherein the high refractive index film layer 21 is a niobium trioxide film layer, and the low refractive index film layer 22 is a silicon dioxide film layer. The use of the above-mentioned interference film stack 2 can reduce the reflectivity of the photovoltaic glass 100, and the structure of the photovoltaic glass 100 is also relatively simple, which can reduce the production cost. Further, in an embodiment of the present invention, in the interference film stack 2, the thickness of the film layers from the 1st layer to the 7th layer are 5nm to 10nm, 35nm to 45nm, 20nm to 30nm, 15nm to 25nm, 120nm to 160nm, 20nm to 40nm and 15nm to 25nm respectively. The thickness of each film layer of the interference film stack 2 is within the above range, which is beneficial to reduce the reflectivity of the photovoltaic glass 100 and reduce the production cost. In the interference film stack 2, the thickness of the film layers from the 1st layer to the 7th layer can be 5nm, 35nm, 20nm, 15nm, 120nm, 20nm and 15nm, respectively, can be 7nm, 40nm, 25nm, 20nm, 140nm, 30nm and 20nm, respectively, can be 10nm, 40nm, 30nm, 20nm, 150nm, 30nm and 20nm, or can be 10nm, 45nm, 30nm, 25nm, 160nm, 40nm and 25nm. It can be understood that the refractive index of the niobium oxide film layer at a wavelength of 550nm can be 2.32, and the refractive index of the silicon dioxide film layer at a wavelength of 550nm can be 1.46.

[0071] In an embodiment of the present invention, the interference film stack 2 has 8 film layers. In the direction away from the glass substrate 1, the 1st, 3rd, 5th and 7th layers are high refractive index film layers 21, and the 2nd, 4th, 6th and 8th layers are low refractive index film layers 22; wherein the high refractive index film layer 21 is a niobium trioxide film layer, and the low refractive index film layer 22 is a silicon dioxide film layer. The use of the above-mentioned interference film stack 2 can reduce the reflectivity of the photovoltaic glass 100, and the structure of the photovoltaic glass 100 is also relatively simple, which can reduce the production cost. Further, in an embodiment of the present invention, in the interference film stack 2, the thickness of the film layers from the 1st layer to the 8th layer are 5nm to 10nm, 35nm to 50nm, 20nm to 25nm, 10nm to 20nm, 100nm to 130nm, 15nm to 25nm, 15nm to 20nm and 35nm to 65nm respectively. The thickness of each film layer of the interference film stack 2 is within the above range, which is beneficial to reduce the reflectivity of the photovoltaic glass 100 and reduce the production cost. In the interference film stack 2, the thickness of the film layers from the 1st layer to the 8th layer can be 5nm, 35nm, 20nm, 10nm, 100nm, 15nm, 15nm and 35nm, respectively, can be 7nm, 42nm, 22nm, 15nm, 115nm, 20nm, 17nm and 50nm, can be 10nm, 50nm, 20nm, 20nm, 120nm, 20nm, 20nm and 50nm, or can be 10nm, 50nm, 25nm, 20nm, 130nm, 25nm, 20nm and 65nm. It can be understood that the refractive index of the niobium oxide film layer at a wavelength of 550nm can be 2.32, and the refractive index of the silicon dioxide film layer at a wavelength of 550nm can be 1.46.

[0072] In an embodiment of the present invention, the glass substrate 1 includes at least one of ultra-clear rolled glass and ultra-clear float glass. The glass substrate 1 uses the above glass, which is beneficial to reducing the reflectivity of the photovoltaic glass 100. The glass substrate 1 can be one of ultra-clear rolled glass and ultra-clear float glass, or a combination of the two.

[0073] In an embodiment of the present invention, the light transmittance of the glass substrate 1 is greater than or equal to 90%. The light transmittance of the glass substrate 1 is within the above range, which is conducive to reducing the reflectivity of the photovoltaic glass 100. The light transmittance of the glass substrate 1 can be 90%, 91%, 92%, 93%, 94% or 95%.

[0074] In an embodiment of the present invention, the thickness of the glass substrate 1 is 1.6 mm to 4.0 mm. The thickness of the glass substrate 1 is within the above range, which is beneficial to reducing the reflectivity of the photovoltaic glass 100 and improving the wear resistance and weather resistance of the photovoltaic glass 100. The thickness of the glass substrate 1 can be 1.6 mm, 1.8 mm, 2.0 mm, 2.2 mm, 2.4 mm, 2.5 mm, 2.8 mm, 3.0 mm, 3.2 mm, 3.4 mm, 3.6 mm, 3.8 mm, or 4.0 mm.

[0075] In an embodiment of the present invention, the average reflectivity of the photovoltaic glass 100 at near normal incidence in the 380nm-1100nm band is less than or equal to 1%. The average reflectivity of the photovoltaic glass 100 at near normal incidence in the 380nm-1100nm band is within the above range, which can improve the power generation performance of the photovoltaic glass 100.

[0076] The present invention provides a method for preparing the photovoltaic glass 100, comprising the following steps:

[0077] S10, obtaining the optimized film layer structure of the interference film stack 2 through film system design;

[0078] S20, on the glass substrate 1, a high refractive index film layer 21 and a low refractive index film layer 22 are alternately prepared by a vacuum coating method to form a film layer structure of an interference film stack 2 of an optimized design;

[0079] S30, on the interference film stack 2, a coating is prepared by a sol-gel method, and a curing treatment is performed to obtain a nanoporous layer 3, and then a tempering treatment is performed to obtain a photovoltaic glass 100.

[0080] The interference film stack 2 is prepared by vacuum coating method, the nanoporous layer 3 is prepared by sol-gel method, and then tempered to obtain photovoltaic glass 100. The operation is simple, and the continuous production of large-area photovoltaic glass 100 can be achieved, and the production cycle can also be shortened.

[0081] It can be understood that the coating process for preparing the coating by the sol-gel method can be spraying, roller coating or curtain coating; the process for alternately preparing the high refractive index film layer 21 and the low refractive index film layer 22 by the vacuum coating method can be electron beam evaporation, magnetron sputtering or atomic force deposition; before the glass substrate 1 is vacuum coated, it can be cut, edged, cleaned and dried for use.

[0082] In an embodiment of the present invention, step S10 includes:

[0083] S101, preparing a coating by a sol-gel method, performing a curing treatment to obtain a nanoporous layer 3, and then performing a tempering treatment to obtain a nanoporous layer 3 sample;

[0084] S102, using an ellipsometer to test and obtain a refractive index distribution curve of the nanoporous layer 3 sample;

[0085] S103, using a vacuum coating method to prepare single film layer samples of different materials used in the interference film stack 2, to obtain a plurality of single film layer samples corresponding to different materials;

[0086] S104, using an ellipsometer to test and obtain refractive index distribution curves of the plurality of single film layer samples respectively;

[0087] S105. Use thin film design software to set optimization targets according to the wavelength range and reflection requirements of the anti-reflection film; use the nanoporous layer 3 sample as the outermost layer, select appropriate high refractive index film layers 21 and low refractive index film layers 22 from the multiple single film layer samples, perform film system design, and obtain the film layer structure of the optimized interference film stack 2.

[0088] The film layer structure of the interference film stack 2 optimized by the above steps can be used to guide the preparation of the interference film stack 2 and control the reflectivity of the photovoltaic glass 100. Further, in an embodiment of the present invention, the thickness of the nanoporous layer 3 sample can be 80nm to 120nm, and the thickness of the single film layer sample can be 80nm to 120nm.

[0089] In an embodiment of the present invention, in step S30, the temperature of the curing treatment is 100°C to 300°C. The temperature of the curing treatment is within the above range, which is conducive to ensuring the performance of the nanoporous layer 3. The temperature of the curing treatment can be 100°C, 150°C, 200°C, 250°C or 300°C. Preferably, the temperature of the curing treatment is 150°C to 200°C.

[0090] In an embodiment of the present invention, in step S30, the temperature of the tempering treatment is 600° C. to 700° C. The temperature of the tempering treatment is within the above range, which improves the wear resistance and weather resistance of the photovoltaic glass 100. The temperature of the tempering treatment can be 600° C., 620° C., 650° C., 680° C. or 700° C.

[0091] It can be understood that, in step S101, the temperature of the curing treatment may be 100°C to 300°C, and the temperature of the tempering treatment may be 600°C to 700°C.

[0092] The present invention also provides a photovoltaic module, including photovoltaic glass 100. The structure and preparation method of the photovoltaic glass 100 refer to the above embodiments. Since the photovoltaic module adopts all the technical solutions of all the above embodiments, it has at least all the beneficial effects brought by the technical solutions of the above embodiments, which will not be described one by one here.

[0093] The technical solution of the present invention is further described in detail below in conjunction with specific embodiments. It should be understood that the following embodiments are only used to explain the present invention, and are not used to limit the present invention.

[0094] Example 1

[0095] A photovoltaic glass 100 comprises a glass substrate 1 and an interference film stack 2 and a nanoporous silica layer arranged on one side of the glass substrate 1; the interference film stack 2 comprises a high refractive index film layer 21 and a low refractive index film layer 22 alternately arranged in a direction away from the glass substrate 1, and the porous structure of the nanoporous silica layer is a surface closed-pore structure;

[0096] The interference film stack 2 has three film layers. In the direction away from the glass substrate 1, the first and third layers are high refractive index film layers 21 (H 1.81 ), the second layer is a low refractive index film layer 22 (L 1.46 ), the high refractive index film layer 21 is an yttrium oxide film layer (Y2O3 film layer), and the low refractive index film layer 22 is a silicon dioxide film layer (SiO2 film layer);

[0097] The difference in expansion coefficient between the glass substrate 1 and the adjacent film layer is 0.6*10 -6 / K;

[0098] In the interference film stack 2, the difference in expansion coefficient between any two adjacent film layers is 8*10 -6 / K;

[0099] The specific structure of the photovoltaic glass 100 is 2.0 mm glass substrate 1 / / 150 nm H 1.81 / / 20nm L 1.46 / / 40H 1.81 / / 100nm nanoporous silica layer;

[0100] The method for preparing the photovoltaic glass 100 comprises the following steps:

[0101] On the glass substrate 1, a high refractive index film layer 21 (H 1.81 ) and the low refractive index film layer 22 (H 1.46 ), to obtain the interference film stack 2;

[0102] On the interference film stack 2, a coating is prepared by a sol-gel method, and a curing treatment is performed to obtain the nanoporous silica layer, which is then tempered to obtain the photovoltaic glass 100; wherein the curing treatment temperature is 150°C, and the tempering treatment temperature is 600°C.

[0103] Example 2

[0104] A photovoltaic glass 100 comprises a glass substrate 1 and an interference film stack 2 and a nanoporous silica layer arranged on one side of the glass substrate 1; the interference film stack 2 comprises a high refractive index film layer 21 and a low refractive index film layer 22 alternately arranged in a direction away from the glass substrate 1, and the porous structure of the nanoporous silica layer is a surface closed-pore structure;

[0105] The interference film stack 2 has four film layers. In the direction away from the glass substrate 1, the first and third layers are high refractive index film layers 21 (H 2.32 ), the second and fourth layers are low refractive index film layers 22 (L 1.46 ), the high refractive index film layer 21 is a niobium oxide film layer (Nb2O3 film layer), and the low refractive index film layer 22 is a silicon dioxide film layer (SiO2 film layer);

[0106] The difference in expansion coefficient between the glass substrate 1 and the adjacent film layer is 2.5*10 -6 / K;

[0107] In the interference film stack 2, the difference in expansion coefficient between any two adjacent film layers is 5*10 -6 / K;

[0108] The specific structure of the photovoltaic glass 100 is 2.0 mm glass substrate 1 / / 5 nm H 2.32 / / 100nm L 1.46 / / 10nmH 2.32 / / 120nm L 1.46 / / 100nm nanoporous silica layer;

[0109] The method for preparing the photovoltaic glass 100 comprises the following steps:

[0110] On the glass substrate 1, a high refractive index film layer 21 (H 2.32 ) and the low refractive index film layer 22 (H 1.46 ), to obtain the interference film stack 2;

[0111] On the interference film stack 2, a coating is prepared by a sol-gel method, and a curing treatment is performed to obtain the nanoporous silica layer, which is then tempered to obtain the photovoltaic glass 100; wherein the curing treatment temperature is 150°C, and the tempering treatment temperature is 600°C.

[0112] Example 3

[0113] A photovoltaic glass 100 comprises a glass substrate 1 and an interference film stack 2 and a nanoporous silica layer arranged on one side of the glass substrate 1; the interference film stack 2 comprises a high refractive index film layer 21 and a low refractive index film layer 22 alternately arranged in a direction away from the glass substrate 1, and the porous structure of the nanoporous silica layer is a surface closed-pore structure;

[0114] The interference film stack 2 has 5 film layers. In the direction away from the glass substrate 1, the first, third and fifth layers are high refractive index film layers 21 (H 2.32 ), the second and fourth layers are low refractive index film layers 22 (L 1.46 ), the high refractive index film layer 21 is a niobium oxide film layer (Nb2O3 film layer), and the low refractive index film layer 22 is a silicon dioxide film layer (SiO2 film layer);

[0115] The difference in expansion coefficient between the glass substrate 1 and the adjacent film layer is 2.5*10 -6 / K;

[0116] In the interference film stack 2, the difference in expansion coefficient between any two adjacent film layers is 5*10 -6 / K;

[0117] The specific structure of the photovoltaic glass 100 is 2.0 mm glass substrate 1 / / 10 nm H 2.32 / / 80nm L 1.46 / / 10nmH 2.32 / / 100nm L 1.46 / / 5nm H 2.32 / / 80nm nanoporous silica layer;

[0118] The method for preparing the photovoltaic glass 100 comprises the following steps:

[0119] On the glass substrate 1, a high refractive index film layer 21 (H 2.32 ) and the low refractive index film layer 22 (H 1.46 ), to obtain the interference film stack 2;

[0120] On the interference film stack 2, a coating is prepared by a sol-gel method, and a curing treatment is performed to obtain the nanoporous silica layer, which is then tempered to obtain the photovoltaic glass 100; wherein the curing treatment temperature is 150°C, and the tempering treatment temperature is 650°C.

[0121] Example 4

[0122] A photovoltaic glass 100 comprises a glass substrate 1 and an interference film stack 2 and a nanoporous silica layer arranged on one side of the glass substrate 1; the interference film stack 2 comprises a high refractive index film layer 21 and a low refractive index film layer 22 alternately arranged in a direction away from the glass substrate 1, and the porous structure of the nanoporous silica layer is a surface closed-pore structure;

[0123] The interference film stack 2 has 6 film layers. In the direction away from the glass substrate 1, the first, third and fifth layers are high refractive index film layers 21 (H 2.32 ), the second layer, the fourth layer and the sixth layer are low refractive index film layers 22 (L 1.46 ), the high refractive index film layer 21 is a niobium oxide film layer (Nb2O3 film layer), and the low refractive index film layer 22 is a silicon dioxide film layer (SiO2 film layer);

[0124] The difference in expansion coefficient between the glass substrate 1 and the adjacent film layer is 2.5*10 -6 / K;

[0125] In the interference film stack 2, the difference in expansion coefficient between any two adjacent film layers is 5*10 -6 / K;

[0126] The specific structure of the photovoltaic glass 100 is 2.0 mm glass substrate 1 / / 5 nm H 2.32 / / 80nm L 1.46 / / 10nmH 2.32 / / 100nm L 1.46 / / 5nm H 2.32 / / 5nm L 1.46 / / 120nm nanoporous silica layer;

[0127] The method for preparing the photovoltaic glass 100 comprises the following steps:

[0128] On the glass substrate 1, a high refractive index film layer 21 (H 2.32 ) and the low refractive index film layer 22 (H 1.46 ), to obtain the interference film stack 2;

[0129] On the interference film stack 2, a coating is prepared by a sol-gel method, and a curing treatment is performed to obtain the nanoporous silica layer, which is then tempered to obtain the photovoltaic glass 100; wherein the curing treatment temperature is 150°C, and the tempering treatment temperature is 650°C.

[0130] Example 5

[0131] A photovoltaic glass 100 comprises a glass substrate 1 and an interference film stack 2 and a nanoporous silica layer arranged on one side of the glass substrate 1; the interference film stack 2 comprises a high refractive index film layer 21 and a low refractive index film layer 22 alternately arranged in a direction away from the glass substrate 1, and the porous structure of the nanoporous silica layer is a surface closed-pore structure;

[0132] The interference film stack 2 has 7 film layers. In the direction away from the glass substrate 1, the first, third, fifth and seventh layers are high refractive index film layers 21 (H 2 ) with a refractive index of 2.32 at a wavelength of 550 nm. 2.32 ), the second layer, the fourth layer and the sixth layer are low refractive index film layers 22 (L 1.46 ), the high refractive index film layer 21 is a niobium oxide film layer (Nb2O3 film layer), and the low refractive index film layer 22 is a silicon dioxide film layer (SiO2 film layer);

[0133] The difference in expansion coefficient between the glass substrate 1 and the adjacent film layer is 2.5*10 -6 / K;

[0134] In the interference film stack 2, the difference in expansion coefficient between any two adjacent film layers is 5*10 -6 / K;

[0135] The specific structure of the photovoltaic glass 100 is 2.0 mm glass substrate 1 / / 10 nm H 2.32 / / 40nm L 1.46 / / 30nmH 2.32 / / 20nm L 1.46 / / 150nm H 2.32 / / 30nm L 1.46 / / 20nm H 2.32 / / 150nm nanoporous silica layer;

[0136] The method for preparing the photovoltaic glass 100 comprises the following steps:

[0137] On the glass substrate 1, a high refractive index film layer 21 (H 2.32 ) and the low refractive index film layer 22 (H 1.46 ), to obtain the interference film stack 2;

[0138] On the interference film stack 2, a coating is prepared by a sol-gel method, and a curing treatment is performed to obtain the nanoporous silica layer, which is then tempered to obtain the photovoltaic glass 100; wherein the curing treatment temperature is 150°C, and the tempering treatment temperature is 700°C.

[0139] Example 6

[0140] A photovoltaic glass 100 comprises a glass substrate 1 and an interference film stack 2 and a nanoporous silica layer arranged on one side of the glass substrate 1; the interference film stack 2 comprises a high refractive index film layer 21 and a low refractive index film layer 22 alternately arranged in a direction away from the glass substrate 1, and the porous structure of the nanoporous silica layer is a surface closed-pore structure;

[0141] The interference film stack 2 has 8 film layers. In the direction away from the glass substrate 1, the first, third, fifth and seventh layers are high refractive index film layers 21 (H 2 ) with a refractive index of 2.32 at a wavelength of 550 nm. 2.32 ), the second layer, the fourth layer, the sixth layer and the eighth layer are low refractive index film layers 22 (L 1.46 ), the high refractive index film layer 21 is a niobium oxide film layer (Nb2O3 film layer), and the low refractive index film layer 22 is a silicon dioxide film layer (SiO2 film layer);

[0142] The difference in expansion coefficient between the glass substrate 1 and the adjacent film layer is 2.5*10 -6 / K;

[0143] In the interference film stack 2, the difference in expansion coefficient between any two adjacent film layers is 5*10 -6 / K;

[0144] The specific structure of the photovoltaic glass 100 is 2.0 mm glass substrate 1 / / 10 nm H 2.32 / / 50nm L 1.46 / / 20nmH 2.32 / / 20nm L 1.46 / / 120nm H 2.32 / / 20nm L 1.46 / / 20nm H 2.32 / / 50nm L 1.46 / / 60nm nanoporous silica layer;

[0145] The method for preparing the photovoltaic glass 100 comprises the following steps:

[0146] On the glass substrate 1, a high refractive index film layer 21 (H 2.32 ) and the low refractive index film layer 22 (H 1.46 ), to obtain the interference film stack 2;

[0147] On the interference film stack 2, a coating is prepared by a sol-gel method, and a curing treatment is performed to obtain the nanoporous silica layer, which is then tempered to obtain the photovoltaic glass 100; wherein the curing treatment temperature is 150°C, and the tempering treatment temperature is 700°C.

[0148] Comparative Example 1

[0149] A photovoltaic glass 100 is a commercially available double-layer coated glass, with a specific structure of: 2.0 mm glass substrate 1 / / 80 nm film layer with a refractive index of 1.44 / / 120 nm film layer with a refractive index of 1.30.

[0150] Performance Testing

[0151] (1) Reflectivity test

[0152] The reflectance of the photovoltaic glass 100 of Examples 1 to 6 and Comparative Example 1 at near normal incidence in the 380nm to 1100nm band was tested respectively. The reflectance spectra of the photovoltaic glass 100 of Examples 1 to 6 and Comparative Example 1 at near normal incidence in the 380nm to 1100nm band are shown in FIG. Figures 3 to 9 The average reflectivity of the photovoltaic glass 100 of Examples 1 to 6 and Comparative Example 1 at near normal incidence in the wavelength range of 380 nm to 1100 nm is shown in Table 1;

[0153] (2) Wear resistance test

[0154] The film hardness of the photovoltaic glass 100 of Examples 1 to 6 and Comparative Example 1 was measured by the pencil method, referring to GB / T 6739-2006 "Determination of film hardness of paint and varnish by pencil method", and the industry requires that the pencil hardness of the film is greater than or equal to 4H; the results are shown in Table 1;

[0155] (3) Weather resistance test

[0156] The weather resistance of the photovoltaic glass 100 of Examples 1 to 6 and Comparative Example 1 was tested by accelerated aging test. After 48 hours of pressure cooking aging (PCT), the decrease in transmittance was measured. After another 48 hours of pressure cooking aging (PCT) (PCT 96 hours), the decrease in transmittance was measured again. For details, please refer to JC / T 2170-2013 "Anti-reflection Film Glass for Solar Photovoltaic Modules". The industry requires: under the conditions of a temperature of 121°C and a relative humidity of 100%, after 48 hours of pressure cooking aging (PCT), the decrease in transmittance shall not exceed 1%. The results are shown in Table 1.

[0157] Table 1 Performance test results of photovoltaic glass of Examples 1 to 6 and Comparative Example 1

[0158]

[0159]

[0160] It can be seen from Table 1 that the average reflectivity of the photovoltaic glass 100 of Examples 1 to 6 at near normal incidence in the 380nm~1100nm band is less than 1%, and compared with Comparative Example 1, the average reflectivity of the photovoltaic glass 100 of Examples 1 to 6 at near normal incidence in the 380nm~1100nm band is reduced by 0.21%~0.71%, indicating that the photovoltaic glass 100 of the present invention can reduce the reflectivity; the pencil hardness of the film layer of the photovoltaic glass 100 of Examples 1 to 6 is 4H, indicating that the photovoltaic glass 100 of the present invention has good wear resistance and can meet industry requirements; the photovoltaic glass 100 of Examples 1 to 6 ... After aging for 48 hours, the transmittance decreases by 0.11% to 0.25%, and after aging under pressure cooking for 96 hours, the transmittance decreases by 0.22% to 0.31%, indicating that the photovoltaic glass 100 of the present invention has excellent weather resistance and can meet industry requirements; and compared with comparative example 1, the transmittance decreases of the photovoltaic glasses 100 of embodiments 1 to 6 after aging under pressure cooking for 48 hours and after aging under pressure cooking for 96 hours are reduced, indicating that the photovoltaic glass 100 of the present application can even improve weather resistance; in summary, the photovoltaic glass 100 of the present invention can reduce reflectivity, and can also take into account wear resistance and weather resistance, thereby improving the power generation performance of photovoltaic modules.

[0161] The above description is only an exemplary embodiment of the present invention, and does not limit the patent scope of the present invention. All equivalent structural changes made by using the contents of the present invention specification and drawings under the technical concept of the present invention, or directly / indirectly applied in other related technical fields are included in the patent protection scope of the present invention.

Claims

1. A photovoltaic glass, characterized in that: It includes a glass substrate and an anti-reflection film arranged on one side of the glass substrate, wherein the anti-reflection film includes an interference film stack and a nanoporous layer arranged in sequence on the glass substrate; wherein the interference film stack includes high-refractive index film layers and low-refractive index film layers alternately arranged in a direction away from the glass substrate, and the porous structure of the nanoporous layer is a surface closed-pore structure.

2. The photovoltaic glass according to claim 1, characterized in that: The difference in expansion coefficient between the glass substrate and the adjacent film layer is less than or equal to 5×10 -6 / K; and / or, In the interference film stack, the difference in expansion coefficient between any two adjacent film layers is less than or equal to 8×10 -6 / K.

3. The photovoltaic glass according to claim 1, characterized in that: The thickness of the nanoporous layer is 50 nm to 200 nm; and / or, The pore size of the nanoporous layer is 10 nm to 80 nm; and / or, The refractive index of the nanoporous layer at a wavelength of 550 nm is 1.28 to 1.32; and / or, The nanoporous layer comprises any one of aluminum oxide, silicon dioxide, titanium dioxide, zinc oxide and tin dioxide.

4. The photovoltaic glass according to claim 1, characterized in that: The number of film layers of the interference film stack is less than or equal to 8; and / or, The thickness of the interference film stack is less than or equal to 350 nm.

5. The photovoltaic glass according to claim 1, characterized in that: In the interference film stack, the refractive index of the high refractive index film layer at a wavelength of 550nm is 1.8 to 2.5; and / or, In the interference film stack, the refractive index of the low refractive index film layer at a wavelength of 550nm is 1.4 to 2.

2.

6. The photovoltaic glass according to claim 1, characterized in that: In the interference film stack, the extinction coefficient of each film layer in the 450nm-2500nm band is less than or equal to 0.

2.

7. The photovoltaic glass according to claim 1, characterized in that: In the interference film stack, the component of the high refractive index film layer includes at least one of a first oxide and a first nitride; and / or, In the interference film stack, the component of the low refractive index film layer includes at least one of a second oxide and a second nitride.

8. The photovoltaic glass according to claim 1, characterized in that: The glass substrate comprises at least one of ultra-clear rolled glass and ultra-clear float glass; and / or, The light transmittance of the glass substrate is greater than or equal to 90%; and / or, The thickness of the glass substrate is 1.6 mm to 4.0 mm.

9. The photovoltaic glass according to claim 1, characterized in that: The average reflectivity of the photovoltaic glass at near-normal incidence in the 380nm-1100nm waveband is less than or equal to 1%.

10. A method for preparing photovoltaic glass according to any one of claims 1 to 9, characterized in that: The following steps are involved: Through film system design, the film layer structure of the optimized interference film stack is obtained; On a glass substrate, a high refractive index film layer and a low refractive index film layer are alternately prepared by vacuum coating method to form a film layer structure of an optimized interference film stack; On the interference film stack, a coating is prepared by a sol-gel method, and a curing treatment is performed to obtain a nanoporous layer, which is then tempered to obtain photovoltaic glass.

11. The method for preparing photovoltaic glass according to claim 10, characterized in that: In the step of preparing a coating on the interference film stack by a sol-gel method, performing a curing treatment to obtain a nanoporous layer, and then performing a tempering treatment to obtain photovoltaic glass: The curing temperature is 100°C to 300°C; and / or, The temperature of the tempering treatment is 600°C to 700°C.

12. A photovoltaic module, characterized in that: The invention comprises the photovoltaic glass as described in any one of claims 1 to 9, or the photovoltaic glass prepared by the method for preparing the photovoltaic glass as described in claim 10 or 11.

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