Polishing device and wafer transfer method and equipment

Abstract

The invention provides a polishing device and a wafer transfer method and equipment, the polishing device comprises an upper polishing disc and a lower polishing disc which can be pressed or separated from each other, the lower polishing disc comprises a plurality of wafer carriers, the wafer carriers are provided with wafer bearing areas, and the bearing surfaces corresponding to the wafer bearing areas are provided with a plurality of vacuum adsorption holes; the vacuum unit is communicated with the vacuum adsorption hole; the control unit is used for controlling the vacuum unit to enable the vacuum adsorption hole to perform vacuum adsorption operation on the wafer in the wafer bearing area in a first time period; in the second time period, the vacuum unit is controlled to enable the vacuum adsorption hole to perform vacuum breaking release on the wafer in the wafer bearing area; the first time period comprises a stage that the upper polishing disc and the lower polishing disc start to be separated from each other from a pressing state after wafer polishing treatment is completed on the wafer; the second time period comprises a stage of transferring the wafer from the lower polishing disk to the wafer transfer mechanism. According to the polishing device and the wafer transfer method and equipment disclosed by the invention, wafer adhesion can be prevented.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a polishing device and a wafer transfer method and equipment. Background Art

[0002] Grinding and polishing (LAP) is an important process in wafer manufacturing. The purpose of grinding and polishing is to make the wafer have a flat surface with a certain geometric dimensional accuracy, and at the same time remove the mechanical stress damage layer on the wafer surface caused by cutting during the slicing process.

[0003] Double-sided grinding and polishing is to place the cut wafer between the upper and lower polishing plates. During the rotation of the polishing plates, the surface of the wafer is roughened and thinned through the action of grinding fluid and pressure.

[0004] However, in the process of processing wafers in the double-sided polishing device, the wafers are prone to sticking after processing due to the morphology of the upper and lower polishing pads and the influence of factors such as the grinding fluid, resulting in the wafer transfer mechanism of the next process failing to transfer the wafer when taking the material from the polishing device, causing equipment downtime, and when the on-site operators deal with the downtime, manual placement of wafers may cause misalignment, misplacing of the front and back sides, and other human errors, resulting in mixing of materials. At the same time, when the upper and lower polishing plates stick, after lifting the upper polishing plate, because the lower polishing plate is not tightly adhered to the wafer, when the lower polishing plate rotates, the wafer may slip out of the carrier and hit the outer pin ring, resulting in fragments. Summary of the invention

[0005] In order to solve at least one technical problem in the above-mentioned prior art, the embodiments of the present disclosure provide a polishing device and a wafer transfer method and equipment.

[0006] The technical solutions provided by the embodiments of the present disclosure are as follows:

[0007] In a first aspect, an embodiment of the present disclosure provides a polishing device, comprising:

[0008] An upper polishing plate and a lower polishing plate that can be pressed together or separated from each other, wherein the lower polishing plate comprises a plurality of wafer carriers, wherein at least one wafer carrying area is provided on the wafer carrier, and a plurality of vacuum adsorption holes distributed at intervals are provided on the carrying surface corresponding to the wafer carrying area;

[0009] A vacuum unit connected to the vacuum adsorption hole; and

[0010] A control unit connected to the vacuum unit;

[0011] The control unit is used for:

[0012] In a first time period, controlling the vacuum unit to enable the vacuum adsorption holes to perform a vacuum adsorption operation on the wafer in the wafer carrying area;

[0013] In the second time period, the vacuum unit is controlled to make the vacuum adsorption hole break the vacuum and release the wafer in the wafer supporting area;

[0014] Among them, the first time period includes the stage when the upper polishing plate and the lower polishing plate begin to separate from each other from the pressed state after the wafer polishing process is completed; the second time period includes the stage when the wafer is transferred from the lower polishing plate to the wafer transfer mechanism.

[0015] Exemplarily, a first control valve is provided between the vacuum unit and the vacuum adsorption hole, and the control unit is connected to the first control valve; the control unit is used to:

[0016] In the first time period and the second time period, the first control valve is controlled to open so as to connect the vacuum unit and the vacuum adsorption hole;

[0017] In a third time period, the first control valve is controlled to be closed to cut off the vacuum unit and the vacuum suction hole, wherein the third time period includes a stage of performing a polishing operation on the wafer.

[0018] Exemplarily, the vacuum unit comprises:

[0019] Vacuum generator;

[0020] Clean gas components;

[0021] A vacuum pipeline is connected between the vacuum generator and the vacuum adsorption hole, and a vacuum solenoid valve is provided on the vacuum pipeline;

[0022] A vacuum breaking pipeline is connected between the cleaning gas component and the vacuum adsorption hole, a vacuum breaking solenoid valve is provided on the vacuum breaking pipeline, and the vacuum pipeline is arranged in parallel with the vacuum breaking pipeline;

[0023] The control unit is used for:

[0024] In the first time period, the vacuum solenoid valve is controlled to be opened, and the vacuum breaking solenoid valve is controlled to be closed;

[0025] In the second time period, the vacuum breaking solenoid valve is controlled to be opened, and the vacuum solenoid valve is controlled to be closed.

[0026] Exemplarily, the polishing device also includes a gas-liquid separation unit, which includes at least one separation chamber, and the separation chamber includes a gas-liquid mixing inlet, a gas inlet and a liquid outlet, the gas-liquid mixing inlet and the gas inlet and the liquid outlet are located in the upper part of the separation chamber, and the liquid outlet is located in the lower part of the separation chamber; wherein the gas-liquid mixing inlet is connected to the vacuum adsorption hole through a first pipeline, and the gas inlet and the liquid outlet are connected to the vacuum unit through a second pipeline.

[0027] Exemplarily, a second control valve is provided on the first pipeline, and the control unit is connected to the second control valve, and the second control valve is used to control the second control valve to open in the first time period and the second time period to connect the gas-liquid separation unit and the vacuum adsorption hole; in the third time period, the second control valve is controlled to close to cut off the gas-liquid separation unit and the vacuum adsorption hole, wherein the third time period includes a stage of performing a polishing operation on the wafer.

[0028] Exemplarily, the vacuum unit includes at least one sub-vacuum unit, one vacuum adsorption hole is correspondingly connected to one separation chamber, and the gas inlets and outlets of all the separation chambers corresponding to several vacuum adsorption holes in the same wafer supporting area are connected to the same sub-vacuum unit.

[0029] In a second aspect, an embodiment of the present disclosure provides a wafer transfer method, which transfers a wafer from the polishing device according to any one of claims 1 to 6 to a wafer transfer mechanism; the method comprises:

[0030] In a first time period, controlling the vacuum unit to enable the vacuum adsorption holes to perform a vacuum adsorption operation on the wafer in the wafer carrying area;

[0031] In the second time period, the vacuum unit is controlled to make the vacuum adsorption hole break the vacuum and release the wafer in the wafer supporting area;

[0032] Among them, the first time period is the stage when the upper polishing plate and the lower polishing plate begin to separate from each other from the mutually pressed state after the wafer polishing process is completed; the second time period includes the stage of transferring the wafer from the lower polishing plate to the wafer transfer mechanism.

[0033] Exemplarily, the method further includes:

[0034] In the first time period and the second time period, the first control valve is controlled to be opened so that the vacuum unit and the vacuum adsorption hole are in a conducting state;

[0035] In a third time period, the first control valve is controlled to be closed so that the vacuum unit and the vacuum suction hole are in a cut-off state, wherein the third time period includes a stage of performing a polishing operation on the wafer.

[0036] Exemplarily, in the method,

[0037] In the first time period and the second time period, controlling the second control valve to open so as to connect the gas-liquid separation unit and the vacuum adsorption hole;

[0038] In a third time period, the second control valve is controlled to be closed to cut off the gas-liquid separation unit and the vacuum adsorption hole, wherein the third time period includes a stage of performing a polishing operation on the wafer.

[0039] In a third aspect, an embodiment of the present disclosure further provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the wafer transfer method as described above when executing the computer program.

[0040] The beneficial effects brought by the embodiments of the present disclosure are as follows:

[0041] In the polishing device and wafer transfer method and equipment provided by the embodiments of the present disclosure, the polishing device includes an upper polishing plate and a lower polishing plate that can be pressed or separated from each other, a vacuum unit and a control unit, wherein a plurality of vacuum adsorption holes are provided on the wafer carrying area of ​​the lower polishing plate, and the vacuum adsorption holes are connected to the vacuum unit, and the control unit can control the vacuum unit in a first time period so that the vacuum adsorption holes perform vacuum adsorption operations on the wafers in the wafer carrying area; and in a second time period, control the vacuum unit so that the vacuum adsorption holes break the vacuum and release the wafers in the wafer carrying area; wherein the first time period includes a stage in which the upper polishing plate and the lower polishing plate begin to separate from each other from a pressed state after the wafer polishing process is completed; and the second time period includes a stage in which the wafer is transferred from the lower polishing plate to the wafer transfer mechanism.

[0042] In the above scheme, after the polishing device completes the polishing process of the wafer, when the wafer is transferred from the polishing device to the wafer transfer mechanism of the next process, in the stage of separating the upper polishing plate from the lower polishing plate, the vacuum unit can be used to cause the vacuum adsorption hole to adsorb and fix the wafer to prevent adhesion between the wafer and the upper polishing plate; then, after the wafer is separated from the upper polishing plate, the wafer is fixed on the lower polishing plate by vacuum adsorption, and when it rotates to the unloading station with the lower polishing plate, the wafer will not slip out of the wafer carrier, which can reduce the risk of wafer collision and fragmentation; then, when the wafer rotates to the unloading station with the lower polishing plate, when the wafer transfer mechanism of the next process starts to take material from the lower polishing plate, the vacuum unit can be used to break the vacuum and release the wafer to prevent adhesion between the wafer and the lower polishing plate, so that the wafer transfer mechanism can smoothly take material from the lower polishing plate, thereby avoiding wafer transfer failure. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 A schematic diagram showing the structure of a lower polishing plate of a polishing device provided in an embodiment of the present disclosure;

[0044] Figure 2 A schematic diagram of the connection structure between the vacuum adsorption holes on the lower polishing plate and the vacuum unit and the gas-liquid separation unit in the polishing device provided in an embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0045] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0046] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, similar words such as "one", "one" or "the" do not indicate quantity restrictions, but indicate that there is at least one. Similar words such as "include" or "comprise" mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Similar words such as "connect" or "connected" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0047] The features such as "parallel", "perpendicular", and "same" used in the embodiments of the present disclosure include the features such as "parallel", "perpendicular", and "same" in a strict sense, as well as the cases where "approximately parallel", "approximately perpendicular", "approximately the same", etc. include certain tolerances, taking into account the tolerances associated with the measurement of specific quantities (e.g., the limitations of the measurement system), and represent the acceptable deviation range for a specific value determined by ordinary technicians in the field. For example, "approximately" can mean within one or more standard deviations, or within 3% or 5% of the value.

[0048] In addition, in this document, unless otherwise defined, the terms "substantially", "substantially", "approximately" and "about" are used to describe and explain small changes. When used with an event or situation, these terms can cover situations where the event or situation occurs exactly, and can also cover situations where the event or situation occurs approximately. For example, when used with a numerical value, these terms can include a range of variation of less than or equal to 10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, less than or equal to ±0.05%. The term "substantially coplanar" can refer to two surfaces being arranged along the same plane in the micrometer range, for example, arranged along the same plane within 40μm, 30μm, 20μm, 10μm or 1μm.

[0049] Double-sided grinding and polishing is to place the cut wafer between the upper and lower polishing plates. During the rotation of the polishing plates, the surface of the wafer is roughened and thinned through the action of grinding fluid and pressure.

[0050] However, during the process of processing wafers in a double-sided polishing device, wafers are prone to sticking after processing due to factors such as the morphology of the upper and lower polishing pads and the grinding fluid.

[0051] If the wafer sticks, it may cause the ILU (Integrated Load Unit) auxiliary equipment to fail to transfer the wafer when taking the material from the polishing device, thereby causing the equipment to shut down.

[0052] Specifically, when the wafer is stuck to the upper polishing plate, there is no wafer in the wafer carrier on the lower polishing plate, which causes abnormal wafer adsorption by the wafer transfer mechanism (such as a robot) in the next process. When the wafer is stuck to the lower polishing plate, the wafer is too tightly adhered to the lower polishing plate, which also causes abnormal wafer adsorption by the wafer transfer mechanism (such as a robot) in the next process. Even if the adsorption vacuum value of the wafer transfer mechanism is increased, there will be no improvement.

[0053] After the equipment breaks down, on-site workers are required to manually pick up and place wafers, which can cause wafer misalignment, front and back side misplacement, and other human errors that can lead to material mixing.

[0054] In addition, after the polishing process is completed, when the upper polishing plate is separated from the lower polishing plate, since the lower polishing plate and the wafer are not tightly adhered, when the lower polishing plate rotates, the wafer may slip out of the wafer carrier and hit the outer pin ring and other parts, resulting in fragments.

[0055] In order to solve the above problems, the embodiments of the present disclosure provide a polishing device and a wafer transfer method and equipment, which can avoid wafer sticking, reduce equipment downtime and human failure to a certain extent, and reduce the risk of material mixing and wafer fragmentation caused by manual wafer placement.

[0056] like Figure 1 and Figure 2 As shown, the polishing device provided by the embodiment of the present disclosure includes:

[0057] Upper polishing plate (not shown);

[0058] A lower polishing plate 100, wherein the lower polishing plate 100 and the upper polishing plate can be pressed together or separated, and the lower polishing plate 100 comprises a plurality of wafer carriers 110, wherein at least one wafer carrying area 112 is provided on the wafer carrier 110, and a plurality of vacuum adsorption holes 111 distributed at intervals are provided on the carrying surface corresponding to the wafer carrying area 112;

[0059] A vacuum unit 200 is connected to the vacuum adsorption hole 111; and

[0060] A control unit (not shown in the figure), connected to the vacuum unit 200;

[0061] The control unit is used for:

[0062] In a first time period, the vacuum unit 200 is controlled to enable the vacuum adsorption holes 111 to perform a vacuum adsorption operation on the wafer 20 in the wafer carrying area 112;

[0063] In the second time period, the vacuum unit 200 is controlled to make the vacuum adsorption holes 111 break the vacuum and release the wafer 20 in the wafer carrying area 112;

[0064] Among them, the first time period includes the stage when the upper polishing plate and the lower polishing plate 100 begin to separate from each other from the pressed state after the wafer polishing process is completed; the second time period includes the stage when the wafer is transferred from the lower polishing plate 100 to the wafer transfer mechanism 10.

[0065] In the above scheme, after the polishing device completes the polishing process on the wafer, when the wafer is transferred from the polishing device to the wafer transfer mechanism 10 of the next process, in the stage of separating the upper polishing plate from the lower polishing plate 100, the vacuum adsorption hole 111 can be adsorbed and fixed by the vacuum unit 200 to prevent the wafer from sticking to the upper polishing plate; then, after the wafer is separated from the upper polishing plate, when the wafer transfer mechanism 10 of the next process starts to take material from the lower polishing plate 100, the vacuum unit 200 can be used to break the vacuum and release the wafer to prevent the wafer from sticking to the lower polishing plate 100, so that the wafer transfer mechanism 10 can smoothly take material from the lower polishing plate 100, thereby avoiding wafer transfer failure.

[0066] It should be noted that after the wafer is separated from the upper polishing plate, the wafer transfer mechanism 10 (such as a robot) of the next process can pick up and place the wafer on the lower polishing plate 100 at the unloading station. After taking out several wafers on the wafer carrier 110 currently at the unloading station, the lower polishing plate 100 will rotate and move the next wafer carrier 110 to the unloading station to continue taking materials, and so on until all the wafers on all the wafer carriers 110 of the lower polishing plate 100 are taken out.

[0067] Therefore, after the wafer is separated from the upper polishing plate, at least part of the wafer is not in the unloading station, and the wafer can be moved to the unloading station by the rotation of the lower polishing plate 100, so as to facilitate the wafer transfer mechanism 10 to take the wafer. In the process of the wafer rotating to the unloading station with the lower polishing plate 100, the wafer can also be fixed on the lower polishing plate 100 by vacuum adsorption, so that the wafer will not slide out of the wafer carrier 110, which can reduce the risk of wafer collision and fragmentation.

[0068] Therefore, in some embodiments, the first time period may not only include: after the wafer polishing process is completed, the upper polishing plate and the lower polishing plate 100 begin to separate from each other from the pressed state; it may also include: after the upper polishing plate and the lower polishing plate 100 are separated, the wafer is rotated to the unloading station along with the lower polishing plate 100.

[0069] In addition, in some embodiments, Figure 1 and Figure 2 As shown, one wafer carrying area 112 may be provided with three vacuum adsorption holes 111, and the three vacuum adsorption holes 111 are evenly distributed. However, the specific number and position of the vacuum adsorption holes 111 are not limited thereto.

[0070] It should also be noted that the bearing surface corresponding to the wafer bearing area 112 is provided with a plurality of vacuum adsorption holes 111 distributed at intervals, which may mean that the vacuum adsorption holes 111 may be arranged in the area corresponding to the wafer bearing area 112 on the lower polishing plate 100 and the lower polishing pad 101. After the wafer polishing process is completed, the control unit may control the wafer carrier 110 to be exactly in the position where the wafer bearing area 112 and the corresponding plurality of vacuum adsorption holes 111 are directly opposite. Of course, it is understandable that in other embodiments not shown, the vacuum adsorption holes 111 may also be arranged in the wafer bearing area 112 in other ways.

[0071] Furthermore, in some exemplary embodiments, Figure 1 and Figure 2 As shown, a first control valve 300 is provided between the vacuum unit 200 and the vacuum adsorption hole 111, and the control unit is connected to the first control valve 300; the control unit is used for:

[0072] In the first time period and the second time period, the first control valve 300 is controlled to open so as to connect the vacuum unit 200 and the vacuum adsorption hole 111;

[0073] In a third time period, the first control valve 300 is controlled to be closed to cut off the vacuum unit 200 and the vacuum suction holes 111 , wherein the third time period includes a stage of performing a polishing operation on a wafer.

[0074] By adopting the above scheme, during the stage of performing polishing operation on the wafer, the first control valve 300 can be controlled to be normally closed, and only after the polishing process is completed, the first control valve 300 is opened to connect the vacuum unit 200 with the vacuum adsorption hole 111, and in the first time period, the vacuum unit 200 is controlled to make the vacuum adsorption hole 111 perform vacuum adsorption operation on the wafer in the wafer supporting area 112; in the second time period, the vacuum unit 200 is controlled to make the vacuum adsorption hole 111 break the vacuum and release the wafer in the wafer supporting area 112.

[0075] Furthermore, in some exemplary embodiments, Figure 1 and Figure 2 As shown, the vacuum unit 200 includes:

[0076] Vacuum generator (Process Vacuum, PV);

[0077] Clean Dry Air (CDA);

[0078] A vacuum pipeline 210 is connected between the vacuum generator and the vacuum adsorption hole 111, and a vacuum solenoid valve 211 is provided on the vacuum pipeline 210;

[0079] A vacuum breaking pipeline 220 is connected between the cleaning gas assembly and the vacuum adsorption hole 111. A vacuum breaking solenoid valve 221 is provided on the vacuum breaking pipeline 220. The vacuum pipeline 210 is arranged in parallel with the vacuum breaking pipeline 220.

[0080] The control unit is used for:

[0081] In the first time period, the vacuum solenoid valve 211 is controlled to be opened, and the vacuum breaking solenoid valve 221 is controlled to be closed;

[0082] In the second time period, the vacuum breaking solenoid valve 221 is controlled to be opened, and the vacuum solenoid valve 211 is controlled to be closed.

[0083] By adopting the above scheme, by controlling the opening and closing of the vacuum solenoid valve 211 and the vacuum breaking solenoid valve 221, the vacuum unit 200 can achieve the purpose of causing the vacuum adsorption hole 111 to perform a vacuum adsorption operation or a vacuum breaking release operation, and the structure is simple.

[0084] Furthermore, in some exemplary embodiments, Figure 1 and Figure 2As shown, the polishing device also includes a gas-liquid separation unit 400, and the gas-liquid separation unit 400 includes at least one separation chamber 410, and the separation chamber 410 includes a gas-liquid mixed inlet 411, a gas inlet and outlet 412 and a liquid outlet 413, wherein the gas-liquid mixed inlet 411 and the gas inlet and outlet 412 are located at the upper part of the separation chamber 410, and the liquid outlet 413 is located at the lower part of the separation chamber 410; wherein the gas-liquid mixed inlet 411 is connected to the vacuum adsorption hole 111 through a first pipeline 414, and the gas inlet and outlet 412 is connected to the vacuum unit 200 through a second pipeline 415.

[0085] By adopting the above scheme, since there will be polishing liquid and polishing impurities in the polishing process, the gas-liquid separation unit 400 is also connected to the vacuum adsorption hole 111, and the water-gas separator will separate the gas-liquid mixture sucked in during vacuum adsorption in the separation chamber 410, and the separated liquid will be in the lower part of the separation chamber 410, and the gas will be in the upper part of the separation chamber 410. Therefore, the vacuum unit 200 can be connected to the upper part of the separation chamber 410 through the second pipeline 415 to ensure the vacuum adsorption and vacuum breaking effects, wherein when the liquid level in the separation chamber 410 reaches the predetermined liquid level, the liquid in the separation chamber 410 can be discharged through the liquid outlet 413.

[0086] Furthermore, in some exemplary embodiments, Figure 1 and Figure 2 As shown, a second control valve 500 is provided on the first pipeline 414, and the control unit is connected to the second control valve 500. The second control valve 500 is used to control the second control valve 500 to open in the first time period and the second time period to connect the gas-liquid separation unit 400 and the vacuum adsorption hole 111; in the third time period, the second control valve 500 is controlled to close to cut off the gas-liquid separation unit 400 and the vacuum adsorption hole 111, wherein the third time period includes a stage of performing a polishing operation on the wafer.

[0087] By adopting the above solution, by setting the second control valve 500 and controlling the opening and closing of the second control valve 500, the vacuum unit 200 can achieve the purpose of causing the vacuum adsorption hole 111 to perform a vacuum adsorption operation or a vacuum breaking and releasing operation, and the structure is simple.

[0088] In addition, in some exemplary embodiments, the vacuum unit 200 includes at least one sub-vacuum unit 200, one of the vacuum adsorption holes 111 is correspondingly connected to one of the separation chambers 410, and the gas inlets and outlets 412 of all the separation chambers 410 corresponding to several vacuum adsorption holes 111 in the same wafer carrying area 112 are connected to the same sub-vacuum unit 200.

[0089] Taking the figure as an example, a sub-vacuum unit 200 includes a vacuum pipeline 210 and a vacuum breaking pipeline 220, and the gas inlets and outlets 412 of all separation chambers 410 corresponding to the vacuum adsorption holes 111 of a wafer supporting area 112 are connected to the same sub-vacuum unit 200.

[0090] The working process of the polishing device in some embodiments of the present disclosure is described below:

[0091] In the third time period when the polishing device performs a polishing operation on the wafer, the first control valve 300 and the second control valve 500 are closed; after the polishing process is completed, the upper polishing plate and the lower polishing plate 100 begin to separate from each other from the pressed state, and after the upper polishing plate and the lower polishing plate 100 are separated, the wafer rotates to the unloading station with the lower polishing plate 100, the first control valve 300, the second control valve 500 and the vacuum solenoid valve 211 are opened, and the The vacuum breaking solenoid valve 221 is used to enable the vacuum unit 200 to enable the vacuum adsorption hole 111 to perform vacuum adsorption operation on the wafer in the wafer carrying area 112; when the wafer is transferred from the lower polishing plate 100 to the wafer transfer mechanism 10, the first control valve 300, the second control valve 500 and the vacuum breaking solenoid valve 221 are opened, and the vacuum solenoid valve 211 is closed, and the vacuum unit 200 enables the vacuum adsorption hole 111 to break the vacuum and release the wafer in the wafer carrying area 112.

[0092] In addition, the embodiment of the present disclosure provides a wafer transfer method, which transfers the wafer from the polishing device in the embodiment of the present disclosure to the wafer transfer mechanism 10; the method comprises:

[0093] Step S01, in a first time period, controlling the vacuum unit 200 to enable the vacuum adsorption holes 111 to perform a vacuum adsorption operation on the wafer in the wafer carrying area 112;

[0094] Step S02, in a second time period, controlling the vacuum unit 200 to allow the vacuum adsorption holes 111 to break the vacuum and release the wafer in the wafer carrying area 112;

[0095] Among them, the first time period is the stage when the upper polishing plate and the lower polishing plate 100 begin to separate from each other from the mutually pressed state after the wafer polishing process is completed; the second time period includes the stage of transferring the wafer from the lower polishing plate 100 to the wafer transfer mechanism 10.

[0096] Exemplarily, in the method, in the above step S01 and step S02, in the first time period and the second time period, the first control valve 300 is controlled to be opened so that the vacuum unit 200 and the vacuum adsorption hole 111 are in a conductive state; and before the above step S01, the method further includes:

[0097] Step S03 , in a third time period, controlling the first control valve 300 to be closed, so that the vacuum unit 200 and the vacuum adsorption hole 111 are in a cut-off state, wherein the third time period includes a stage of performing a polishing operation on the wafer.

[0098] Exemplarily, in the above step S01 and step S02, in the first time period and the second time period, the second control valve 500 is controlled to be opened to connect the gas-liquid separation unit 400 and the vacuum adsorption hole 111; in the above step S03, in the third time period, the second control valve 500 is controlled to be closed to cut off the gas-liquid separation unit 400 and the vacuum adsorption hole 111, wherein the third time period includes a stage of performing a polishing operation on the wafer.

[0099] Obviously, the wafer transfer method provided in the embodiment of the present disclosure also has the beneficial effects brought by the wafer carrier provided in the embodiment of the present disclosure, which will not be elaborated here.

[0100] In addition, an embodiment of the present disclosure also provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the wafer transfer method as described above when executing the computer program.

[0101] In addition, a computer-readable storage medium is provided in an embodiment of the present disclosure, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the wafer transfer method described above are implemented.

[0102] The above-mentioned computer-readable storage medium can achieve the beneficial effects brought by the above-mentioned method when the computer program stored in its memory is executed by the processor.

[0103] Those of ordinary skill in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory or optical memory, etc. Volatile memory can include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM).

[0104] There are a few points to note:

[0105] (1) The drawings of the embodiments of the present disclosure only relate to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.

[0106] (2) For the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the thickness of layers or regions is exaggerated or reduced, that is, these drawings are not drawn according to the actual scale. It is understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, the element may be "directly" "on" or "under" the other element or there may be intermediate elements.

[0107] (3) In the absence of conflict, the embodiments of the present disclosure and the features therein may be combined with each other to obtain new embodiments.

[0108] The above are only specific implementations of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and the protection scope of the present disclosure shall be based on the protection scope of the claims.

Claims

1. A polishing device, characterized in that: include: An upper polishing plate and a lower polishing plate that can be pressed together or separated from each other, wherein the lower polishing plate comprises a plurality of wafer carriers, wherein the wafer carrier is provided with at least one wafer carrying area, and a plurality of vacuum adsorption holes distributed at intervals are provided on the carrying surface corresponding to the wafer carrying area; A vacuum unit connected to the vacuum adsorption hole; and a control unit connected to the vacuum unit; The control unit is used for: In a first time period, controlling the vacuum unit to enable the vacuum adsorption holes to perform a vacuum adsorption operation on the wafer in the wafer carrying area; In the second time period, the vacuum unit is controlled to make the vacuum adsorption hole break the vacuum and release the wafer in the wafer supporting area; Among them, the first time period includes the stage when the upper polishing plate and the lower polishing plate begin to separate from each other from the pressed state after the wafer polishing process is completed; the second time period includes the stage when the wafer is transferred from the lower polishing plate to the wafer transfer mechanism.

2. The polishing device according to claim 1, characterized in that: A first control valve is provided between the vacuum unit and the vacuum adsorption hole, and the control unit is connected to the first control valve; the control unit is used for: In the first time period and the second time period, the first control valve is controlled to open so as to connect the vacuum unit and the vacuum adsorption hole; In a third time period, the first control valve is controlled to be closed to cut off the vacuum unit and the vacuum suction hole, wherein the third time period includes a stage of performing a polishing operation on the wafer.

3. The polishing device according to claim 1, characterized in that: The vacuum unit comprises: Vacuum generator; Clean gas components; A vacuum pipeline is connected between the vacuum generator and the vacuum adsorption hole, and a vacuum solenoid valve is provided on the vacuum pipeline; A vacuum breaking pipeline is connected between the cleaning gas component and the vacuum adsorption hole, a vacuum breaking solenoid valve is provided on the vacuum breaking pipeline, and the vacuum pipeline is arranged in parallel with the vacuum breaking pipeline; The control unit is used for: In the first time period, the vacuum solenoid valve is controlled to be opened, and the vacuum breaking solenoid valve is controlled to be closed; In the second time period, the vacuum breaking solenoid valve is controlled to be opened, and the vacuum solenoid valve is controlled to be closed.

4. The polishing device according to claim 1, characterized in that: The polishing device also includes a gas-liquid separation unit, which includes at least one separation chamber, and the separation chamber includes a gas-liquid mixing inlet, a gas inlet and an outlet, and a liquid outlet. The gas-liquid mixing inlet and the gas inlet and the inlet and outlet are located at the upper part of the separation chamber, and the liquid outlet is located at the lower part of the separation chamber; wherein the gas-liquid mixing inlet is connected to the vacuum adsorption hole through a first pipeline, and the gas inlet and outlet are connected to the vacuum unit through a second pipeline.

5. The polishing device according to claim 4, characterized in that: A second control valve is provided on the first pipeline, and the control unit is connected to the second control valve. The second control valve is used to control the second control valve to open in the first time period and the second time period to connect the gas-liquid separation unit and the vacuum adsorption hole; in the third time period, the second control valve is controlled to close to cut off the gas-liquid separation unit and the vacuum adsorption hole, wherein the third time period includes a stage of performing a polishing operation on the wafer.

6. The polishing device according to claim 4, characterized in that: The vacuum unit includes at least one sub-vacuum unit, one vacuum adsorption hole is correspondingly connected to one separation chamber, and the gas inlets and outlets of all the separation chambers corresponding to several vacuum adsorption holes in the same wafer supporting area are connected to the same sub-vacuum unit.

7. A wafer transfer method, characterized in that: Transferring a wafer from the polishing device according to any one of claims 1 to 6 to a wafer transfer mechanism; the method comprising: In a first time period, controlling the vacuum unit to enable the vacuum adsorption holes to perform a vacuum adsorption operation on the wafer in the wafer carrying area; In the second time period, the vacuum unit is controlled to make the vacuum adsorption hole break the vacuum and release the wafer in the wafer supporting area; Among them, the first time period is the stage when the upper polishing plate and the lower polishing plate begin to separate from each other from the mutually pressed state after the wafer polishing process is completed; the second time period includes the stage of transferring the wafer from the lower polishing plate to the wafer transfer mechanism.

8. The wafer transfer method according to claim 7, characterized in that: When applied to the polishing device as claimed in claim 2, the method further comprises: In the first time period and the second time period, the first control valve is controlled to be opened so that the vacuum unit and the vacuum adsorption hole are in a conducting state; In a third time period, the first control valve is controlled to be closed so that the vacuum unit and the vacuum suction hole are in a cutoff state, wherein the third time period includes a stage of performing a polishing operation on the wafer.

9. The wafer transfer method according to claim 7, characterized in that: When applied to the polishing device as claimed in claim 5, in the method, In the first time period and the second time period, the second control valve is controlled to open so as to connect the gas-liquid separation unit and the vacuum adsorption hole; In a third time period, the second control valve is controlled to be closed to cut off the gas-liquid separation unit and the vacuum adsorption hole, wherein the third time period includes a stage of performing a polishing operation on the wafer.

10. An electronic device, characterized in that: The method comprises a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the wafer transfer method according to any one of claims 7 to 8 when executing the computer program.

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