Semiconductor circuit

Abstract

The invention relates to the technical field of circuits, and provides a semiconductor circuit, which comprises a metal base material, an insulating layer, a circuit wiring layer, a plurality of components, a plurality of pins and a packaging body, the metal base material, the insulating layer and the components respectively form a bridge rectifier, a double-PFC high-voltage power circuit, a full-bridge inverter circuit and a driving control circuit; the metal base material part between the bridge rectifier and the double-PFC high-voltage power circuit, the metal base material part between the double-PFC high-voltage power circuit and the full-bridge inverter circuit, and the metal base material part between the full-bridge inverter circuit and the drive control circuit are respectively provided with a heat insulation groove penetrating through the metal base material part. According to the semiconductor circuit, heat radiation generated by the circuit module with high heat dissipation capacity can be isolated through the heat insulation groove, so that the heat radiation generated by the circuit module with high heat dissipation capacity is prevented from influencing the circuit module with low heat dissipation capacity, and signal interference between the two circuit modules can be avoided.

Description

Technical Field

[0001] The present invention relates to the field of circuit technology, and in particular to a semiconductor circuit. Background Art

[0002] Semiconductor circuits are also called modular intelligent power modules MIPM (Module Intelligent Power System). They not only integrate power switching devices and drive circuits, but also have built-in fault detection circuits such as overvoltage, overcurrent and overheating, and can send detection signals to the CPU or DSP for interrupt processing. It is composed of high-speed, low-power consumption tube cores, optimized gate-level drive circuits and fast protection circuits, which can prevent the IPM itself from being damaged even if a load accident or improper use occurs. It generally uses IGBT as a power switching element and has an integrated structure with a current sensor and drive circuit.

[0003] The semiconductor circuit needs to assemble the inverter circuit composed of low-voltage control circuits such as IC drive control circuit, IPM sampling amplifier circuit and PFC current protection circuit and high-voltage semiconductor circuit on the same circuit board. However, when integrating multiple circuit modules, the semiconductor circuit board of the prior art directly integrates multiple circuit modules on the same circuit board, which causes the circuit module with high heat dissipation to generate heat radiation and affect the circuit module with low heat dissipation, such as signal interference, poor heat dissipation performance, and reduced working performance. Summary of the invention

[0004] The present invention provides a semiconductor circuit, aiming to solve the problem in the prior art that after a plurality of circuit modules are integrated into a semiconductor circuit, a circuit module with high heat dissipation will generate heat radiation and affect a circuit module with low heat dissipation.

[0005] An embodiment of the present invention provides a semiconductor circuit, comprising:

[0006] Metal substrate;

[0007] An insulating layer, the insulating layer being disposed on one side of the metal substrate;

[0008] A circuit wiring layer, the circuit wiring layer is arranged on a side of the insulating layer away from the metal substrate;

[0009] A plurality of components, wherein the plurality of components are arranged at intervals on a side of the circuit wiring layer away from the insulating layer, and the plurality of components and the components and the circuit wiring layer are electrically connected to each other;

[0010] A plurality of pins, one end of each of the pins being disposed on the circuit wiring layer;

[0011] A package body, wherein the package body covers a portion of the metal substrate, the plurality of components and the plurality of pins, and the other ends of the plurality of pins extend outward through the package body;

[0012] The corresponding metal substrate described in the first part, the insulating layer described in the first part and the components described in the first part constitute a rectifier bridge stack, the corresponding metal substrate described in the second part, the insulating layer described in the second part and the components described in the second part constitute a dual PFC high-voltage power circuit, the corresponding metal substrate described in the third part, the insulating layer described in the third part and the components described in the third part constitute a full-bridge inverter circuit, and the corresponding metal substrate described in the fourth part, the insulating layer described in the fourth part and the components described in the fourth part constitute a drive control circuit;

[0013] The metal substrate portion between the rectifier bridge stack and the dual PFC high-voltage power circuit, the metal substrate portion between the dual PFC high-voltage power circuit and the full-bridge inverter circuit, and the metal substrate portion between the full-bridge inverter circuit and the drive control circuit are respectively provided with heat insulation grooves running through them.

[0014] Preferably, the heat insulation tank is a rectangular tank body.

[0015] Preferably, the heat insulation tank is a rectangular tank body.

[0016] Preferably, a plurality of outwardly protruding bosses are spaced apart from each other on one side of the packaging body which is away from the insulating substrate and parallel to the insulating substrate.

[0017] Preferably, the semiconductor circuit also includes a heat sink; the heat sink is provided with protrusions protruding outward and corresponding to the thermal insulation groove at positions corresponding to the thermal insulation groove, the heat sink is arranged on a side of the metal substrate away from the insulating layer, and the protrusions are inserted into the thermal insulation groove.

[0018] Preferably, the semiconductor circuit board further comprises a green oil layer which is arranged on the circuit wiring layer to avoid all the components.

[0019] Preferably, the plurality of components include at least chip resistors and chip capacitors that are spaced apart and arranged on the circuit wiring layer.

[0020] Preferably, the semiconductor circuit board further comprises a plurality of heat sinks spaced apart on the circuit wiring layer, and some of the components are respectively arranged on the plurality of heat sinks.

[0021] Preferably, electrical connection is achieved between the plurality of components and between the components and the circuit wiring layer by binding metal wires.

[0022] Compared with the prior art, the semiconductor circuit in the present invention is provided with heat insulation grooves penetrating the metal substrate part between the rectifier bridge stack and the dual PFC high-voltage power circuit, the metal substrate part between the dual PFC high-voltage power circuit and the full-bridge inverter circuit, and the metal substrate part between the full-bridge inverter circuit and the drive control circuit, so that the heat radiation generated by the circuit module with high heat dissipation can be isolated by the heat insulation groove, so as to avoid the heat radiation generated by the circuit module with high heat dissipation affecting the circuit module with low heat dissipation, and also avoid signal interference between the two circuit modules. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The present invention will be described in detail below in conjunction with the accompanying drawings. The above and other aspects of the present invention will become clearer and easier to understand through the detailed description made in conjunction with the following drawings. In the accompanying drawings:

[0024] Figure 1 is a cross-sectional schematic diagram of a semiconductor circuit provided by an embodiment of the present invention;

[0025] Figure 2 is a schematic diagram of the front structure of a semiconductor circuit provided by an embodiment of the present invention;

[0026] Figure 3 is a schematic diagram of the back structure of a semiconductor circuit provided by an embodiment of the present invention;

[0027] Figure 4 The present invention is a schematic structural diagram of a semiconductor circuit mounted on a heat sink according to an embodiment of the present invention.

[0028] Among them, 1. Metal substrate; 101. Thermal insulation groove; 2. Insulation layer; 3. Circuit wiring layer; 4. Components; 5. Pins; 6. Package body; 601. Boss; 7. Heat sink; 701. Protrusion; 8. Green oil layer; 9. Chip resistor; 10. Chip capacitor; 11. Heat sink; 12. Binding metal wire; A. Rectifier bridge stack; B. Dual PFC high-voltage power circuit; C. Full-bridge inverter circuit; D. Drive control circuit. DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0030] An embodiment of the present invention provides a semiconductor circuit, Figures 1 to 4 As shown, it includes a metal substrate 1, an insulating layer 2, a circuit wiring layer 3, a plurality of components 4, a plurality of pins 5 and a packaging body 6.

[0031] Specifically, the insulating layer 2 is arranged on one side of the metal substrate 1; the circuit wiring layer 3 is arranged on the side of the insulating layer 2 away from the metal substrate 1; a plurality of components 4 are arranged at intervals on the side of the circuit wiring layer 3 away from the insulating layer 2, and the plurality of components 4 and the components 4 and the circuit wiring layer 3 are electrically connected to each other; one end of the pin 5 is arranged on the circuit wiring layer 3; the package body 6 covers part of the metal substrate 1, the plurality of components 4 and the plurality of pins 5, and the other ends of the plurality of pins 5 extend outward through the package body 6.

[0032] Among them, the metal substrate 1 serves as a carrier of the semiconductor circuit and plays a role in heat dissipation for the components 4; the insulating layer 2 is used to prevent the risk of internal circuit short circuit or leakage caused by the circuit wiring layer 3 and the metal substrate 1 being energized; the circuit wiring layer 3 is also called the copper foil layer, and the required circuit is formed by etching the copper foil to make the circuit wiring; the components 4 are used to form the chips required for the internal functional circuits of the semiconductor circuit; the material of the pin 5 is C194 (-1 / 2H) or KFC (-1 / 2H), wherein the chemical composition of C194 (-1 / 2H) is: Cu≧97.0%, Fe=2.4%, P=0.03%, Zn=0.12%, and the chemical composition of KFC (-1 / 2H) is: Cu≧99.6%, Fe=0.05~0.15% (preferably 0.1%), P=0.025~0.04% (preferably 0.03%). The desired shape is formed by mechanically stamping a 0.5mm copper plate, and then the surface is first nickel-plated with a thickness of 0.1-0.5um, and then tin-plated with a thickness of 2-5um; the package body 6 is formed by a mixture of epoxy resin, high-performance phenolic resin, silicon micropowder and a variety of additives, epoxy resin is the base resin, high-performance phenolic resin is the curing agent, and silicon micropowder is the filler. It is a powdered molding compound, which is extruded into the mold cavity by heat transfer molding and the components 4 therein are embedded, and at the same time cross-linked and cured to form a device with a certain external structure.

[0033] Specifically, the corresponding first part metal substrate 1, the first part insulating layer 2 and the first part components 4 constitute a rectifier bridge stack A, the corresponding second part metal substrate 1, the second part insulating layer 2 and the second part components 4 constitute a dual PFC high-voltage power circuit B, the corresponding third part metal substrate 1, the third part insulating layer 2 and the third part components 4 constitute a full-bridge inverter circuit C, and the corresponding fourth part metal substrate 1, the fourth part insulating layer 2 and the fourth part components 4 constitute a drive control circuit D.

[0034] The rectifier bridge stack A is the circuit with the most serious heat generation in the entire semiconductor circuit; the dual PFC high-voltage power circuit B is the circuit with the most serious heat generation in the entire semiconductor circuit; the full-bridge inverter circuit C is the circuit with the second most heat generation in the entire semiconductor circuit; the drive control circuit D basically does not generate heat in the entire semiconductor circuit, but has strict requirements on the operating temperature.

[0035] The portion of the metal substrate 1 between the rectifier bridge stack A and the dual PFC high-voltage power circuit B, the portion of the metal substrate 1 between the dual PFC high-voltage power circuit B and the full-bridge inverter circuit C, and the portion of the metal substrate 1 between the full-bridge inverter circuit C and the drive control circuit D are respectively provided with a heat insulation groove 101 running through them.

[0036] The heat-insulating groove 101 is partially hollowed out to divide the heat between the components 4 and between the components 4 and the control circuit into different levels to achieve the effect of heat radiation isolation. Its position and shape are determined according to the layout of the components 4 , and its width is also determined according to the heat generation of the components 4 .

[0037] In this embodiment, the heat insulation groove 101 is a rectangular groove body, and its width is 0.5-5 mm.

[0038] In this embodiment, the semiconductor circuit board also includes a green oil layer 8 that avoids all components 4 and is arranged on the circuit wiring layer 3. The green oil layer 8 is also called a protective layer, which is used to prevent tinning where it should not be tinned, increase the withstand voltage between the circuits, prevent short circuits caused by oxidation or contamination of the circuits, and protect the circuits.

[0039] In this embodiment, the plurality of components 4 at least include a chip resistor 9 and a chip capacitor 10 arranged at intervals on the circuit wiring layer 3. The chip resistor 9 is connected to the gate of the IGBT chip in the semiconductor circuit to limit the switching speed of the IGBT chip by limiting the current; the chip capacitor 10 plays the role of filtering, coupling and bootstrapping in the semiconductor circuit.

[0040] In this embodiment, the semiconductor circuit board further includes a plurality of heat sinks 11 arranged at intervals on the circuit wiring layer 3, and some components 4 are respectively arranged on the plurality of heat sinks 11. The heat sink 11 and the components 4 arranged on the heat sink 11 constitute a semi-finished component product, mainly for attaching the components 4 with high heat dissipation requirements to the heat sink 11 to improve the heat dissipation effect; the heat sink 11 adopts the copper surface silver plating process to achieve better adhesion between the surface components 4 and the heat sink 11, further improving the heat dissipation effect.

[0041] In this embodiment, multiple components 4 and components 4 and circuit wiring layer 3 are electrically connected through binding metal wires 12. Binding metal wires 12 are generally made of gold, aluminum, copper, etc., and are used to achieve electrical connections between multiple components 4 and components 4 and circuit wiring layer 3 in the semiconductor circuit.

[0042] In this embodiment, a plurality of outwardly protruding bosses 601 are arranged at intervals on one side of the package body 6 away from the insulating substrate and parallel to the insulating substrate. This design can prevent the semiconductor circuit from being directly attached to the electric control board, so as to prevent the condensed water on the electric control board from long-term infiltration into the semiconductor circuit and affecting the reliability of the product.

[0043] In this embodiment, the semiconductor circuit further includes a heat sink 7; the heat sink 7 is provided with protrusions 701 protruding outward and corresponding to the heat insulation groove 101 at positions corresponding to the heat insulation groove 101, and the heat sink 7 is provided on a side of the metal substrate 1 away from the insulating layer 2, and the protrusions 701 are inserted into the heat insulation groove 101. This design allows the heat sink 7 to better fit the metal substrate 1.

[0044] The semiconductor circuit in this embodiment is provided with heat-insulating grooves 101 running through the metal substrate 1 between the rectifier bridge A and the dual PFC high-voltage power circuit B, the metal substrate 1 between the dual PFC high-voltage power circuit B and the full-bridge inverter circuit C, and the metal substrate 1 between the full-bridge inverter circuit C and the drive control circuit D, so that the heat radiation generated by the circuit module with high heat dissipation can be isolated by the heat-insulating grooves 101 to avoid the heat radiation generated by the circuit module with high heat dissipation from affecting the circuit module with low heat dissipation, and to avoid signal interference between the two circuit modules. In addition, the design of the heat-insulating grooves 101 can also meet the precise positioning and installation of the heat sink 11 and the heat sink 7, so as to realize the precise heat dissipation of the semiconductor circuit and improve the heat dissipation effect.

[0045] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0046] The embodiments of the present invention are described above in conjunction with the accompanying drawings. What is disclosed is only the preferred embodiment of the present invention. However, the present invention is not limited to the above-mentioned specific implementation manner. The above-mentioned specific implementation manner is only illustrative rather than restrictive. Under the enlightenment of the present invention, ordinary technicians in this field can also make many forms and equivalent changes without departing from the scope of protection of the purpose of the present invention and the claims, all of which are within the protection of the present invention.

Claims

1. A semiconductor circuit, characterized in that: The semiconductor circuit comprises: Metal substrate; An insulating layer, the insulating layer being disposed on one side of the metal substrate; A circuit wiring layer, the circuit wiring layer is arranged on a side of the insulating layer away from the metal substrate; A plurality of components, wherein the plurality of components are arranged at intervals on a side of the circuit wiring layer away from the insulating layer, and the plurality of components and the components and the circuit wiring layer are electrically connected to each other; A plurality of pins, one end of each of the pins being disposed on the circuit wiring layer; A package body, wherein the package body covers a portion of the metal substrate, the plurality of components and the plurality of pins, and the other ends of the plurality of pins extend outward through the package body; The corresponding metal substrate described in the first part, the insulating layer described in the first part and the components described in the first part constitute a rectifier bridge stack, the corresponding metal substrate described in the second part, the insulating layer described in the second part and the components described in the second part constitute a dual PFC high-voltage power circuit, the corresponding metal substrate described in the third part, the insulating layer described in the third part and the components described in the third part constitute a full-bridge inverter circuit, and the corresponding metal substrate described in the fourth part, the insulating layer described in the fourth part and the components described in the fourth part constitute a drive control circuit; The metal substrate portion between the rectifier bridge stack and the dual PFC high-voltage power circuit, the metal substrate portion between the dual PFC high-voltage power circuit and the full-bridge inverter circuit, and the metal substrate portion between the full-bridge inverter circuit and the drive control circuit are respectively provided with heat insulation grooves running through them.

2. The semiconductor circuit according to claim 1, wherein: The heat insulation tank is a rectangular tank body.

3. The semiconductor circuit according to claim 2, wherein: The width of the heat insulation groove is 0.5-5 mm.

4. The semiconductor circuit according to claim 1, wherein: A plurality of bosses protruding outwards are arranged at intervals on one side of the package body away from the insulating substrate and parallel to the insulating substrate.

5. The semiconductor circuit according to claim 1, wherein: The semiconductor circuit also includes a heat sink; the heat sink is provided with protrusions protruding outward and corresponding to the heat insulation groove at positions corresponding to the heat insulation groove; the heat sink is arranged on a side of the metal substrate away from the insulating layer, and the protrusions are inserted into the heat insulation groove.

6. The semiconductor circuit according to claim 1, wherein: The semiconductor circuit board also includes a green oil layer which is arranged on the circuit wiring layer to avoid all the components.

7. The semiconductor circuit according to claim 1, wherein: The plurality of components at least include chip resistors and chip capacitors that are spaced apart and arranged on the circuit wiring layer.

8. The semiconductor circuit according to claim 1, wherein: The semiconductor circuit board also includes a plurality of heat sinks spaced apart on the circuit wiring layer, and some of the components are respectively disposed on the plurality of heat sinks.

9. The semiconductor circuit according to claim 1, wherein: Electrical connection is achieved between the plurality of components and between the components and the circuit wiring layer by binding metal wires.

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